Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173996
E.V. Baryshnikova, Irina U. Uskova, E. V. Berestova, Eugeniy S. Povernov, E. Sypin
Physical processes in coal dust influence on particles distribution function in the sizes is investigated in the article.
本文研究了煤尘中物理过程对粒径颗粒分布函数的影响。
{"title":"Physical processes in coal dust investigation on reduction factor of optical radiation","authors":"E.V. Baryshnikova, Irina U. Uskova, E. V. Berestova, Eugeniy S. Povernov, E. Sypin","doi":"10.1109/EDM.2009.5173996","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173996","url":null,"abstract":"Physical processes in coal dust influence on particles distribution function in the sizes is investigated in the article.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121520931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5174015
Y. Zolotukhin, N.V. Bedina
The paper describes the correction of probability calculation procedure for aircraft electrical energy generation system.
本文介绍了飞机发电系统概率计算程序的修正。
{"title":"Use of load factor in probability of failure calculation for aircraft generating system","authors":"Y. Zolotukhin, N.V. Bedina","doi":"10.1109/EDM.2009.5174015","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174015","url":null,"abstract":"The paper describes the correction of probability calculation procedure for aircraft electrical energy generation system.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124368585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173920
M. Lebedev, T. P. Smirnova, V. Kaichev
Thin films of (HfO2)x(Al2O3)1−x alloys were prepared by chemical vapor deposition using the volatile coordination compounds. Amorphous structure of the films has been revealed by x-ray analysis when the Al content is of ≫30%. It was shown by EDS and XPS that Al concentration increases with rising the substrate temperature and content of the Al(acac)3 in mixture of the precursors. Formation of (HfO2)x(Al2O3)1−x alloys is rather than HfO2 and Al2O3 mixture. Decreasing the Al concentration in the line from the interface to the films surface has been observed for the films deposited by using the source with the precursors mixture. The refraction index is the function of the chemical composition variations through the film thickness. The refractive index is invariant through the thickness for the layers deposited by using two spaced sources of the precursors. This is an indication of the uniform components distribution. As the dielectrics for the MIS-structures the (HfO2)x(Al2O3)1−x thin films show the lower permittivity (k=11−16) than HfO2 films (k=15 − 20), but the smaller leakage current (to values of j = 10−6 − 10−8 A/cm2.
{"title":"Thin films of (HfO2)x(Al2O3)1−x alloys: Preparation, chemical structure and dielectric properties","authors":"M. Lebedev, T. P. Smirnova, V. Kaichev","doi":"10.1109/EDM.2009.5173920","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173920","url":null,"abstract":"Thin films of (HfO<inf>2</inf>)<inf>x</inf>(Al<inf>2</inf>O<inf>3</inf>)<inf>1−x</inf> alloys were prepared by chemical vapor deposition using the volatile coordination compounds. Amorphous structure of the films has been revealed by x-ray analysis when the Al content is of ≫30%. It was shown by EDS and XPS that Al concentration increases with rising the substrate temperature and content of the Al(acac)<inf>3</inf> in mixture of the precursors. Formation of (HfO<inf>2</inf>)<inf>x</inf>(Al<inf>2</inf>O<inf>3</inf>)<inf>1−x</inf> alloys is rather than HfO<inf>2</inf> and Al<inf>2</inf>O<inf>3</inf> mixture. Decreasing the Al concentration in the line from the interface to the films surface has been observed for the films deposited by using the source with the precursors mixture. The refraction index is the function of the chemical composition variations through the film thickness. The refractive index is invariant through the thickness for the layers deposited by using two spaced sources of the precursors. This is an indication of the uniform components distribution. As the dielectrics for the MIS-structures the (HfO<inf>2</inf>)<inf>x</inf>(Al<inf>2</inf>O<inf>3</inf>)<inf>1−x</inf> thin films show the lower permittivity (k=11−16) than HfO<inf>2</inf> films (k=15 − 20), but the smaller leakage current (to values of j = 10<sup>−6</sup> − 10<sup>−8</sup> A/cm<sup>2</sup>.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127776422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173915
V. Kesler, A. V. Gorbunov
This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers recombination process under pulse laser exposure of semiconductor film surface and comparison of simulated and experimental curves of photoconductivity relaxation. The experimental photoconductivity relaxation curves were obtained by microwave (SHF) method.
{"title":"Investigation of recombination of nonequilibrium charge carriers in InAs","authors":"V. Kesler, A. V. Gorbunov","doi":"10.1109/EDM.2009.5173915","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173915","url":null,"abstract":"This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers recombination process under pulse laser exposure of semiconductor film surface and comparison of simulated and experimental curves of photoconductivity relaxation. The experimental photoconductivity relaxation curves were obtained by microwave (SHF) method.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132839127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5174010
I. A. Uskova, A. Pavlov, N. Tupikina, E.V. Baryshnikova, E. V. Sypin
In the article development of the ignition center at an early stage in the conditions close to coal mine is analysed, and the factors influencing an intensification of given process are certain. This research can be used as initial data for model construction of burning distributions in three- component disperse environments.
{"title":"Definition of initial data for model construction of burning evolution in three-component disperse environments","authors":"I. A. Uskova, A. Pavlov, N. Tupikina, E.V. Baryshnikova, E. V. Sypin","doi":"10.1109/EDM.2009.5174010","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174010","url":null,"abstract":"In the article development of the ignition center at an early stage in the conditions close to coal mine is analysed, and the factors influencing an intensification of given process are certain. This research can be used as initial data for model construction of burning distributions in three- component disperse environments.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131744566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173944
Denis V. Ischenko, A. Klimov, N. S. Paschin, V. Shumsky
In the present paper, experimental data and an analysis of dark transient injection currents in PbSnTe:In films at helium temperature are presented.
本文给出了氦温度下PbSnTe:In薄膜中暗瞬态注入电流的实验数据和分析。
{"title":"Transient injection currents in PbSnTe:In films","authors":"Denis V. Ischenko, A. Klimov, N. S. Paschin, V. Shumsky","doi":"10.1109/EDM.2009.5173944","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173944","url":null,"abstract":"In the present paper, experimental data and an analysis of dark transient injection currents in PbSnTe:In films at helium temperature are presented.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132182451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173961
K. Novikov
The heuristic algorithm of combination the estimations of the instrument edge relief in the view of parallel scratches on different samples is considered in this paper. The practical comparison of this algorithm with algorithms presented in [1], [2], [3] is given. It is shown, that the aim of algorithms [1], [2], [3] which is the searching of comparison the 1D signals from sites maximally identical by the form can lead to incorrect functioning the given algorithms. The algorithm offered in given paper is essentially free from this lack.
{"title":"The problem of combination the estimations of the instrument edge relief in the view of parallel scratches on different samples","authors":"K. Novikov","doi":"10.1109/EDM.2009.5173961","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173961","url":null,"abstract":"The heuristic algorithm of combination the estimations of the instrument edge relief in the view of parallel scratches on different samples is considered in this paper. The practical comparison of this algorithm with algorithms presented in [1], [2], [3] is given. It is shown, that the aim of algorithms [1], [2], [3] which is the searching of comparison the 1D signals from sites maximally identical by the form can lead to incorrect functioning the given algorithms. The algorithm offered in given paper is essentially free from this lack.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124310570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173998
E. V. Berestova, E. S. Povernov, N. Tupikina, D. V. Gerasimov, E. Sypin
The article describes the factors bringing noise in a signal on input OES. The general ways of adaptation opto-electronic device on a specific check object are considered.
本文描述了输入OES信号中产生噪声的因素。研究了光电器件适应特定检测对象的一般方法。
{"title":"Adaptation opto-electronic device on a specific check object","authors":"E. V. Berestova, E. S. Povernov, N. Tupikina, D. V. Gerasimov, E. Sypin","doi":"10.1109/EDM.2009.5173998","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173998","url":null,"abstract":"The article describes the factors bringing noise in a signal on input OES. The general ways of adaptation opto-electronic device on a specific check object are considered.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"828 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123008367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173922
A. Lyamkina, Y. G. Galitsyn, D. Dmitriev, S. P. Moshchenko, A. Toropov
The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5⋅107 cm−2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.
{"title":"Two-stage nucleation of indium droplets on GaAs (001) substrate","authors":"A. Lyamkina, Y. G. Galitsyn, D. Dmitriev, S. P. Moshchenko, A. Toropov","doi":"10.1109/EDM.2009.5173922","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173922","url":null,"abstract":"The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5⋅107 cm−2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121190604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5174022
E. Denisova, V. I. Khainovskii, V. V. Uzdovskii
Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.
{"title":"Photoelectrical processes in spectroselective photocells for matrix photoreceivers based on five bulk integrated p-n-junctions","authors":"E. Denisova, V. I. Khainovskii, V. V. Uzdovskii","doi":"10.1109/EDM.2009.5174022","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174022","url":null,"abstract":"Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128618287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：