Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173979
V. Khmelev, D. Abramenko, V. V. Pedder, S. N. Tsyganok, R. Barsukov
This article is devoted to comparative researches of half-wave ultrasonic piezoelectric transducers which are made on various constructive schemas. Measuring results of amplitude-frequency and phase-frequency characteristics with operating tools of one-wave and half-wave length are used for their comparison. All operating tools are used in the ultrasonic therapeutic devices.
{"title":"The features investigation of piezoelectric transducers","authors":"V. Khmelev, D. Abramenko, V. V. Pedder, S. N. Tsyganok, R. Barsukov","doi":"10.1109/EDM.2009.5173979","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173979","url":null,"abstract":"This article is devoted to comparative researches of half-wave ultrasonic piezoelectric transducers which are made on various constructive schemas. Measuring results of amplitude-frequency and phase-frequency characteristics with operating tools of one-wave and half-wave length are used for their comparison. All operating tools are used in the ultrasonic therapeutic devices.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115245212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173961
K. Novikov
The heuristic algorithm of combination the estimations of the instrument edge relief in the view of parallel scratches on different samples is considered in this paper. The practical comparison of this algorithm with algorithms presented in [1], [2], [3] is given. It is shown, that the aim of algorithms [1], [2], [3] which is the searching of comparison the 1D signals from sites maximally identical by the form can lead to incorrect functioning the given algorithms. The algorithm offered in given paper is essentially free from this lack.
{"title":"The problem of combination the estimations of the instrument edge relief in the view of parallel scratches on different samples","authors":"K. Novikov","doi":"10.1109/EDM.2009.5173961","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173961","url":null,"abstract":"The heuristic algorithm of combination the estimations of the instrument edge relief in the view of parallel scratches on different samples is considered in this paper. The practical comparison of this algorithm with algorithms presented in [1], [2], [3] is given. It is shown, that the aim of algorithms [1], [2], [3] which is the searching of comparison the 1D signals from sites maximally identical by the form can lead to incorrect functioning the given algorithms. The algorithm offered in given paper is essentially free from this lack.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124310570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173996
E.V. Baryshnikova, Irina U. Uskova, E. V. Berestova, Eugeniy S. Povernov, E. Sypin
Physical processes in coal dust influence on particles distribution function in the sizes is investigated in the article.
本文研究了煤尘中物理过程对粒径颗粒分布函数的影响。
{"title":"Physical processes in coal dust investigation on reduction factor of optical radiation","authors":"E.V. Baryshnikova, Irina U. Uskova, E. V. Berestova, Eugeniy S. Povernov, E. Sypin","doi":"10.1109/EDM.2009.5173996","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173996","url":null,"abstract":"Physical processes in coal dust influence on particles distribution function in the sizes is investigated in the article.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121520931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173975
A.S. Kosolapova, M. E. Lamberova
For reception of cellular cultures in vitro from agricultural plants is actual replacement of synthetic hormones and other growth factors in nutrient mediums on natural.
从农业植物中接受细胞培养物实际上是在天然营养培养基上替代合成激素和其他生长因子。
{"title":"Ultrasonic application during reception of biostimulators from vegetative raw material for cells and tissue culture in vitro","authors":"A.S. Kosolapova, M. E. Lamberova","doi":"10.1109/EDM.2009.5173975","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173975","url":null,"abstract":"For reception of cellular cultures in vitro from agricultural plants is actual replacement of synthetic hormones and other growth factors in nutrient mediums on natural.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"1095 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128286613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173927
S. Rudin, S. P. Suprun
Results of X-ray photoelectron spectroscopy and reflection high-energy electron diffraction of process of GaAs-Ge heterointerface formation under condition of incomplete removal of inherent oxide from GaAs substrate are presented. It was shown that deposition of Ge at the stage of lacunas formation prevents stoichiometric As evaporation from the substrate surface and Ga enrichment. Results of Hall measurements at layerwise etching of epilayers indicate an absence of autodoping effect.
{"title":"Formation of GaAs-Ge heterointerface in the presence of oxide","authors":"S. Rudin, S. P. Suprun","doi":"10.1109/EDM.2009.5173927","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173927","url":null,"abstract":"Results of X-ray photoelectron spectroscopy and reflection high-energy electron diffraction of process of GaAs-Ge heterointerface formation under condition of incomplete removal of inherent oxide from GaAs substrate are presented. It was shown that deposition of Ge at the stage of lacunas formation prevents stoichiometric As evaporation from the substrate surface and Ga enrichment. Results of Hall measurements at layerwise etching of epilayers indicate an absence of autodoping effect.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129518650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173920
M. Lebedev, T. P. Smirnova, V. Kaichev
Thin films of (HfO2)x(Al2O3)1−x alloys were prepared by chemical vapor deposition using the volatile coordination compounds. Amorphous structure of the films has been revealed by x-ray analysis when the Al content is of ≫30%. It was shown by EDS and XPS that Al concentration increases with rising the substrate temperature and content of the Al(acac)3 in mixture of the precursors. Formation of (HfO2)x(Al2O3)1−x alloys is rather than HfO2 and Al2O3 mixture. Decreasing the Al concentration in the line from the interface to the films surface has been observed for the films deposited by using the source with the precursors mixture. The refraction index is the function of the chemical composition variations through the film thickness. The refractive index is invariant through the thickness for the layers deposited by using two spaced sources of the precursors. This is an indication of the uniform components distribution. As the dielectrics for the MIS-structures the (HfO2)x(Al2O3)1−x thin films show the lower permittivity (k=11−16) than HfO2 films (k=15 − 20), but the smaller leakage current (to values of j = 10−6 − 10−8 A/cm2.
{"title":"Thin films of (HfO2)x(Al2O3)1−x alloys: Preparation, chemical structure and dielectric properties","authors":"M. Lebedev, T. P. Smirnova, V. Kaichev","doi":"10.1109/EDM.2009.5173920","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173920","url":null,"abstract":"Thin films of (HfO<inf>2</inf>)<inf>x</inf>(Al<inf>2</inf>O<inf>3</inf>)<inf>1−x</inf> alloys were prepared by chemical vapor deposition using the volatile coordination compounds. Amorphous structure of the films has been revealed by x-ray analysis when the Al content is of ≫30%. It was shown by EDS and XPS that Al concentration increases with rising the substrate temperature and content of the Al(acac)<inf>3</inf> in mixture of the precursors. Formation of (HfO<inf>2</inf>)<inf>x</inf>(Al<inf>2</inf>O<inf>3</inf>)<inf>1−x</inf> alloys is rather than HfO<inf>2</inf> and Al<inf>2</inf>O<inf>3</inf> mixture. Decreasing the Al concentration in the line from the interface to the films surface has been observed for the films deposited by using the source with the precursors mixture. The refraction index is the function of the chemical composition variations through the film thickness. The refractive index is invariant through the thickness for the layers deposited by using two spaced sources of the precursors. This is an indication of the uniform components distribution. As the dielectrics for the MIS-structures the (HfO<inf>2</inf>)<inf>x</inf>(Al<inf>2</inf>O<inf>3</inf>)<inf>1−x</inf> thin films show the lower permittivity (k=11−16) than HfO<inf>2</inf> films (k=15 − 20), but the smaller leakage current (to values of j = 10<sup>−6</sup> − 10<sup>−8</sup> A/cm<sup>2</sup>.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127776422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173915
V. Kesler, A. V. Gorbunov
This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers recombination process under pulse laser exposure of semiconductor film surface and comparison of simulated and experimental curves of photoconductivity relaxation. The experimental photoconductivity relaxation curves were obtained by microwave (SHF) method.
{"title":"Investigation of recombination of nonequilibrium charge carriers in InAs","authors":"V. Kesler, A. V. Gorbunov","doi":"10.1109/EDM.2009.5173915","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173915","url":null,"abstract":"This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers recombination process under pulse laser exposure of semiconductor film surface and comparison of simulated and experimental curves of photoconductivity relaxation. The experimental photoconductivity relaxation curves were obtained by microwave (SHF) method.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132839127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173998
E. V. Berestova, E. S. Povernov, N. Tupikina, D. V. Gerasimov, E. Sypin
The article describes the factors bringing noise in a signal on input OES. The general ways of adaptation opto-electronic device on a specific check object are considered.
本文描述了输入OES信号中产生噪声的因素。研究了光电器件适应特定检测对象的一般方法。
{"title":"Adaptation opto-electronic device on a specific check object","authors":"E. V. Berestova, E. S. Povernov, N. Tupikina, D. V. Gerasimov, E. Sypin","doi":"10.1109/EDM.2009.5173998","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173998","url":null,"abstract":"The article describes the factors bringing noise in a signal on input OES. The general ways of adaptation opto-electronic device on a specific check object are considered.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"828 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123008367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173922
A. Lyamkina, Y. G. Galitsyn, D. Dmitriev, S. P. Moshchenko, A. Toropov
The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5⋅107 cm−2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.
{"title":"Two-stage nucleation of indium droplets on GaAs (001) substrate","authors":"A. Lyamkina, Y. G. Galitsyn, D. Dmitriev, S. P. Moshchenko, A. Toropov","doi":"10.1109/EDM.2009.5173922","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173922","url":null,"abstract":"The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5⋅107 cm−2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121190604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5174022
E. Denisova, V. I. Khainovskii, V. V. Uzdovskii
Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.
{"title":"Photoelectrical processes in spectroselective photocells for matrix photoreceivers based on five bulk integrated p-n-junctions","authors":"E. Denisova, V. I. Khainovskii, V. V. Uzdovskii","doi":"10.1109/EDM.2009.5174022","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174022","url":null,"abstract":"Photoelectrical processes in spectroselective photocells based on five bulk integrated p-n-junction structures were studied by the numerical simulation with help of the device-technological program ISE TCAD. There were received spectral characteristics and there was shown the possibility to receive five different spectral region with more sharp division of the spectral regions of the optical spectrum. There were received times of thermorelaxation and photorelaxation as well as its dependence on parameters of photosensitive cells for photosensitive structures under study.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128618287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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