Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872747
C. Gwyn
The major EUV lithography development program in the US is supported by the EUV LLC consortium composed of Advanced Micro Devices, Intel, Micron, and Motorola. The program goal is to facilitate the research, development and engineering to enable the Semiconductor Equipment Manufacturers (SEMs) to provide production quantities of 70 nm EUV lithography tools for IC manufacturing by 2005.
{"title":"Status of EUV lithography and plans in USA","authors":"C. Gwyn","doi":"10.1109/IMNC.2000.872747","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872747","url":null,"abstract":"The major EUV lithography development program in the US is supported by the EUV LLC consortium composed of Advanced Micro Devices, Intel, Micron, and Motorola. The program goal is to facilitate the research, development and engineering to enable the Semiconductor Equipment Manufacturers (SEMs) to provide production quantities of 70 nm EUV lithography tools for IC manufacturing by 2005.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"35 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114036166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/imnc.2000.872632
Dong-Kwon Kim, Sung-Gyu Kang, Jeong-Yong Park, Jun-Hwan Sim, Jang-Kyoo Shin, Pyung Choi, Jong-Hyun Lee
Piezoresistive flow sensors with four different types of microcantilever structures were fabricated using [100], n/n+/n three-layer silicon wafer and their characteristics were investigated.
{"title":"Characteristics of piezoresistive mass flow sensor fabricated by porous silicon micromachining","authors":"Dong-Kwon Kim, Sung-Gyu Kang, Jeong-Yong Park, Jun-Hwan Sim, Jang-Kyoo Shin, Pyung Choi, Jong-Hyun Lee","doi":"10.1109/imnc.2000.872632","DOIUrl":"https://doi.org/10.1109/imnc.2000.872632","url":null,"abstract":"Piezoresistive flow sensors with four different types of microcantilever structures were fabricated using [100], n/n+/n three-layer silicon wafer and their characteristics were investigated.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126441168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IMNC.2000.872757
T. Wei, C.H. Liu
To achieve high speed and high performance, the feature size of future ULSI circuits must be continuing shrinking. RC delay becomes a major limitation for device performance. Various types of organic low-k polymers have been developed as promising candidates for next generation interconnection dielectrics. However, the electrical, chemical, mechanical, and thermal properties of these new materials are not fully satisfied, and the patterning of these materials was rarely discussed. In this study, we investigated the plasma treatment and dry etching characteristics of two organic low-k dielectrics, FLARE/sup TM/ 2.0 and fluorinated amorphous carbon (a-C:F).
{"title":"The plasma treatment and dry etching characteristics of organic low-k dielectrics","authors":"T. Wei, C.H. Liu","doi":"10.1109/IMNC.2000.872757","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872757","url":null,"abstract":"To achieve high speed and high performance, the feature size of future ULSI circuits must be continuing shrinking. RC delay becomes a major limitation for device performance. Various types of organic low-k polymers have been developed as promising candidates for next generation interconnection dielectrics. However, the electrical, chemical, mechanical, and thermal properties of these new materials are not fully satisfied, and the patterning of these materials was rarely discussed. In this study, we investigated the plasma treatment and dry etching characteristics of two organic low-k dielectrics, FLARE/sup TM/ 2.0 and fluorinated amorphous carbon (a-C:F).","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121148780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/imnc.2000.872717
Sang Hoon Kim, Sang-Gyun Woo, Jinho Ahn
Next generation lithography requires masks with new structures fabricated by silicon process. We have studied etching characteristics of Ta, which is a strong candidate for absorber or scatterer patterns in NGL masks. Many groups reported Ta etching with mixture gases, but we performed Ta etching with pure chlorine chemistry and obtained a clear 0.2 /spl mu/m line and space patterns through the step etching process.
{"title":"Etching characteristics of fine Ta patterns with electron cyclotron resonance chlorine plasma","authors":"Sang Hoon Kim, Sang-Gyun Woo, Jinho Ahn","doi":"10.1109/imnc.2000.872717","DOIUrl":"https://doi.org/10.1109/imnc.2000.872717","url":null,"abstract":"Next generation lithography requires masks with new structures fabricated by silicon process. We have studied etching characteristics of Ta, which is a strong candidate for absorber or scatterer patterns in NGL masks. Many groups reported Ta etching with mixture gases, but we performed Ta etching with pure chlorine chemistry and obtained a clear 0.2 /spl mu/m line and space patterns through the step etching process.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122460009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/imnc.2000.872723
Ji Yun Jung, Woo Sik Kim, Hyung-Ho Park
Pb(Zr,Ti)O/sub 3/ (PZT) thin films have been actively investigated for use in nonvolatile memory devices, piezoelectric sensors, pyroelectric infrared detectors and surface acoustic wave (SAW) devices etc. To fabricate PZT thin film, sol-gel method has been commonly used because of its several advantages such as ease of composition control, high purity, and low processing temperature. In sol-gel processing, it was reported that the solvent of stock solution strongly effects the final properties of PZT thin film. However, a solvent for stock solution is limited from the consideration of reaction with precursor. 2-methoxyethanol has been generally used due to its high reactivity. However, to improve the density of film, solvent with light molecular weight is more desirable. Even though the solvents with light molecular weight has the advantage, those have been rarely used as solvent because it is difficult to control the reaction kinetic between the solvent and precursor alkoxide. Due to the limitations mentioned above, there were few reports about the sol-gel derived PZT thin films using light alcohol such as methanol and ethanol. Moreover, comparing the effects of various solvents to final PZT films has never been reported. Therefore, in this work the authors study the effects of the solvent on the properties of PZT films.
{"title":"The effects of solvent on the properties of sol-gel derived PZT thin film","authors":"Ji Yun Jung, Woo Sik Kim, Hyung-Ho Park","doi":"10.1109/imnc.2000.872723","DOIUrl":"https://doi.org/10.1109/imnc.2000.872723","url":null,"abstract":"Pb(Zr,Ti)O/sub 3/ (PZT) thin films have been actively investigated for use in nonvolatile memory devices, piezoelectric sensors, pyroelectric infrared detectors and surface acoustic wave (SAW) devices etc. To fabricate PZT thin film, sol-gel method has been commonly used because of its several advantages such as ease of composition control, high purity, and low processing temperature. In sol-gel processing, it was reported that the solvent of stock solution strongly effects the final properties of PZT thin film. However, a solvent for stock solution is limited from the consideration of reaction with precursor. 2-methoxyethanol has been generally used due to its high reactivity. However, to improve the density of film, solvent with light molecular weight is more desirable. Even though the solvents with light molecular weight has the advantage, those have been rarely used as solvent because it is difficult to control the reaction kinetic between the solvent and precursor alkoxide. Due to the limitations mentioned above, there were few reports about the sol-gel derived PZT thin films using light alcohol such as methanol and ethanol. Moreover, comparing the effects of various solvents to final PZT films has never been reported. Therefore, in this work the authors study the effects of the solvent on the properties of PZT films.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123756603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/imnc.2000.872704
Sun-Joo Jang, Cheol-Ho Yeo, Jeong-Il Park, Hyun-Young Lee, Hong-Bay Chung
In this study, we have investigated the polarization dependence of photoinduced birefringence (PB), /spl Delta/n in As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35/ chalcogenide thin film with a He-Ne Laser at 633 nm as a pumping beam and a semiconductor laser at 780 nm as a probing beam. Also, the PB transformation for polarization states-linear, circular, elliptical polarization-was investigated. The polarization state of circular, elliptical was produced using a /spl lambda//4 wave plate. The thickness of the film is about 0.9 /spl mu/m which was made close to the optimal thickness, 1 /spl mu/m, which is the penetration depth of the pumping light.
{"title":"Polarization dependence of photoinduced birefringence in chalcogenide thin film","authors":"Sun-Joo Jang, Cheol-Ho Yeo, Jeong-Il Park, Hyun-Young Lee, Hong-Bay Chung","doi":"10.1109/imnc.2000.872704","DOIUrl":"https://doi.org/10.1109/imnc.2000.872704","url":null,"abstract":"In this study, we have investigated the polarization dependence of photoinduced birefringence (PB), /spl Delta/n in As/sub 40/Ge/sub 10/Se/sub 15/S/sub 35/ chalcogenide thin film with a He-Ne Laser at 633 nm as a pumping beam and a semiconductor laser at 780 nm as a probing beam. Also, the PB transformation for polarization states-linear, circular, elliptical polarization-was investigated. The polarization state of circular, elliptical was produced using a /spl lambda//4 wave plate. The thickness of the film is about 0.9 /spl mu/m which was made close to the optimal thickness, 1 /spl mu/m, which is the penetration depth of the pumping light.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"154 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133953108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IMNC.2000.872764
H. Kinoshita, T. Watanabe
At the Himeji Institute of Technology (HIT) the EUVL Laboratory Tool which operates at the wavelength of 13.5 nm with the 0.1 numerical aperture by using 3-mirrors imaging system has been completed. In order to be competitive with other NGL technologies of EUV lithography tool should demonstrate the 70 nm pattern in the large exposure field, uniformity and CD controllability of the entitle exposure area, mask and wafer alignment accuracy, and throughput rapidly. This paper will describes results of some exposure experiments using the 3-aspherical EUVL tool installed in SR facility of NewSUBARU and present the future prospects of EUVL.
在姬路工业大学(Himeji Institute of Technology, HIT)，利用3反射镜成像系统在波长13.5 nm、0.1数值孔径的EUVL实验室工具已经完成。为了与其他NGL技术竞争，EUV光刻工具必须在大曝光场中展示70 nm图案，在整个曝光区域的均匀性和CD可控性，掩模和晶圆对准精度以及快速的通量。本文将介绍安装在新斯巴鲁SR设备上的3非球面EUVL工具的一些暴露实验结果，并对EUVL的未来发展进行展望。
{"title":"Experimental results obtained by EUV laboratory tool at NewSUBARU","authors":"H. Kinoshita, T. Watanabe","doi":"10.1109/IMNC.2000.872764","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872764","url":null,"abstract":"At the Himeji Institute of Technology (HIT) the EUVL Laboratory Tool which operates at the wavelength of 13.5 nm with the 0.1 numerical aperture by using 3-mirrors imaging system has been completed. In order to be competitive with other NGL technologies of EUV lithography tool should demonstrate the 70 nm pattern in the large exposure field, uniformity and CD controllability of the entitle exposure area, mask and wafer alignment accuracy, and throughput rapidly. This paper will describes results of some exposure experiments using the 3-aspherical EUVL tool installed in SR facility of NewSUBARU and present the future prospects of EUVL.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124168074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IMNC.2000.872767
M. Niibe, T. Watanabe, H. Nii, T. Tanaka, H. Kinoshita
We chose chromium, Cr, and tantalum, Ta, metals as a new absorbing material for extreme ultraviolet lithography (EUVL) reflection mask. These metals are frequently used in photomask or X-ray mask for lithography and their fabrication processes are well investigated. This paper shows the calculated transmittance of EUV light for various metals at the wavelength of 13.5 nm. Thee transmittance (or absorbing ability) of Cr and Ta metals for the EUV light is nearly equal to that of tungsten, W. We have fabricated the reflection masks with Cr or Ta metal absorbers deposited on top of Mo/Si multilayer reflectors.
{"title":"Contrast measurement of reflection mask with Cr and Ta absorber for Extreme Ultraviolet Lithography","authors":"M. Niibe, T. Watanabe, H. Nii, T. Tanaka, H. Kinoshita","doi":"10.1109/IMNC.2000.872767","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872767","url":null,"abstract":"We chose chromium, Cr, and tantalum, Ta, metals as a new absorbing material for extreme ultraviolet lithography (EUVL) reflection mask. These metals are frequently used in photomask or X-ray mask for lithography and their fabrication processes are well investigated. This paper shows the calculated transmittance of EUV light for various metals at the wavelength of 13.5 nm. Thee transmittance (or absorbing ability) of Cr and Ta metals for the EUV light is nearly equal to that of tungsten, W. We have fabricated the reflection masks with Cr or Ta metal absorbers deposited on top of Mo/Si multilayer reflectors.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133786909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IMNC.2000.872595
K. H. Brown
Lithography improvements and device scaling have been the major driver behind the industry productivity as predicted by Moore's law over the past three decades. In fact for the past five years, in an effort to remain the productivity curve when other improvements (e.g., tool reliability, process yield) have reached their practical limits, the industry has accelerated the introduction of smaller feature sizes. Between 1994 and 1999 the technology roadmap for feature size introduction has been pulled in three years. The current timeline has features below 0.13um introduced in product by 2001. The ability to continue on this path will be dominated by two key factors at dimensions below 0.13 /spl mu/m. The first factor is the approaching limits to the scaling laws and performance benefits at the chip level. The second is cost. The author briefly reviews possible future developments in this field.
{"title":"Moore's law-is there more?","authors":"K. H. Brown","doi":"10.1109/IMNC.2000.872595","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872595","url":null,"abstract":"Lithography improvements and device scaling have been the major driver behind the industry productivity as predicted by Moore's law over the past three decades. In fact for the past five years, in an effort to remain the productivity curve when other improvements (e.g., tool reliability, process yield) have reached their practical limits, the industry has accelerated the introduction of smaller feature sizes. Between 1994 and 1999 the technology roadmap for feature size introduction has been pulled in three years. The current timeline has features below 0.13um introduced in product by 2001. The ability to continue on this path will be dominated by two key factors at dimensions below 0.13 /spl mu/m. The first factor is the approaching limits to the scaling laws and performance benefits at the chip level. The second is cost. The author briefly reviews possible future developments in this field.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130407814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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