Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872654
N. Lee, W. Choi, W. Yi, Y.W. Jin, Y.S. Choi, J.E. Jung, S.G. You, J. You, C.G. Lee, S. Cho, J.M. Kim
The first 9-inch carbon nanotube based color field emission displays (FEDs) are integrated using a paste squeeze technique. The panel is composed of 576/spl times/242 lines with implementation of low voltage phosphors. The uniform and moving images are achieved only at 2 V//spl mu/m. This demonstrates a turning point of nanotubes for large area and full color applications.
{"title":"The carbon-nanotube based field-emission displays for future large and full color displays","authors":"N. Lee, W. Choi, W. Yi, Y.W. Jin, Y.S. Choi, J.E. Jung, S.G. You, J. You, C.G. Lee, S. Cho, J.M. Kim","doi":"10.1109/IMNC.2000.872654","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872654","url":null,"abstract":"The first 9-inch carbon nanotube based color field emission displays (FEDs) are integrated using a paste squeeze technique. The panel is composed of 576/spl times/242 lines with implementation of low voltage phosphors. The uniform and moving images are achieved only at 2 V//spl mu/m. This demonstrates a turning point of nanotubes for large area and full color applications.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115159283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872692
S. Huang, G. Tsutsui, H. Sakaue, S. Shingubara, T. Takahagi
Assembly of metal nano-particles in ordered two-dimensional (2D) or three-dimensional (3D) arrays is believed capable of providing new materials not only for electronic engineering but also for basic studies, therefor has attracted a lot of research attention. In our previous work, an approach to fabrication of 2D array of alkanethiol-encapsulated gold particles was developed utilizing a self-organized process. However it is hard to fabricate a large-scaled perfect monolayer and well-controlled multilayer structures using this method. For this reason, in the present work, Langmuir-Blodgett (LB) technique was used to fabricate a large-scaled monolayer of nanoscaled gold particles. Comparing to other reports about LB films of gold particles, we got a much larger, higher-ordered 2D nanostructure.
{"title":"A large-scaled 2D array of alkanethiol-encapsulated gold particles fabricated using Langmuir-Blodgett technique","authors":"S. Huang, G. Tsutsui, H. Sakaue, S. Shingubara, T. Takahagi","doi":"10.1109/IMNC.2000.872692","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872692","url":null,"abstract":"Assembly of metal nano-particles in ordered two-dimensional (2D) or three-dimensional (3D) arrays is believed capable of providing new materials not only for electronic engineering but also for basic studies, therefor has attracted a lot of research attention. In our previous work, an approach to fabrication of 2D array of alkanethiol-encapsulated gold particles was developed utilizing a self-organized process. However it is hard to fabricate a large-scaled perfect monolayer and well-controlled multilayer structures using this method. For this reason, in the present work, Langmuir-Blodgett (LB) technique was used to fabricate a large-scaled monolayer of nanoscaled gold particles. Comparing to other reports about LB films of gold particles, we got a much larger, higher-ordered 2D nanostructure.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114194770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872644
S. Kishimura, M. Sasago, M. Shirai, M. Tsunooka
Vacuum ultraviolet (VUV) lithography using the F/sub 2/ excimer laser (157 nm) has been proposed as the most promising candidates for 100-70 nm rule device. We have investigated the transparency and photochemical reaction of well-known polymers and resists in VUV region. In this study, we report the F/sub 2/ excimer laser exposure characteristics of resists consisting of various polymers for KrF and ArF resists.
{"title":"Approach of various polymers to 157 nm single-layer resists","authors":"S. Kishimura, M. Sasago, M. Shirai, M. Tsunooka","doi":"10.1109/IMNC.2000.872644","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872644","url":null,"abstract":"Vacuum ultraviolet (VUV) lithography using the F/sub 2/ excimer laser (157 nm) has been proposed as the most promising candidates for 100-70 nm rule device. We have investigated the transparency and photochemical reaction of well-known polymers and resists in VUV region. In this study, we report the F/sub 2/ excimer laser exposure characteristics of resists consisting of various polymers for KrF and ArF resists.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123382526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872620
M. Ezaki, Y. Kikuchi, S. Tsuboi, H. Watanabe, H. Aoyama, Y. Nakayama, S. Ohki, T. Morosawa, T. Matsuda
E-beam mask writer is an extremely important tool to fabricate the x-ray mask. E-beam writing process is required to have enough placement accuracy and CD controllability for 1X mask. A variable-shaped 100 kV e-beam mask writer EB-X3 has been developed for x-ray membrane mask fabrication and evaluated by using commercially available positive tone resists. We have shown that the high resolution of 50 nm L/S could be obtained for ZEP-520 resists by using the stable 100 kV EB writer. In this study we focus on the chemically amplified (CA) resists for x-ray membrane mask fabrication.
{"title":"CD controllability of chemically amplified resists for x-ray membrane mask fabrication","authors":"M. Ezaki, Y. Kikuchi, S. Tsuboi, H. Watanabe, H. Aoyama, Y. Nakayama, S. Ohki, T. Morosawa, T. Matsuda","doi":"10.1109/IMNC.2000.872620","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872620","url":null,"abstract":"E-beam mask writer is an extremely important tool to fabricate the x-ray mask. E-beam writing process is required to have enough placement accuracy and CD controllability for 1X mask. A variable-shaped 100 kV e-beam mask writer EB-X3 has been developed for x-ray membrane mask fabrication and evaluated by using commercially available positive tone resists. We have shown that the high resolution of 50 nm L/S could be obtained for ZEP-520 resists by using the stable 100 kV EB writer. In this study we focus on the chemically amplified (CA) resists for x-ray membrane mask fabrication.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134559000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872772
Y. Hiratsuka, T. Tada, K. Oiwa, T. Kanayama, T. Uyeda
We have fabricated a uni-directional circulator of microtubules. Since it is already technologically possible to attach foreign materials to microtubules using specific chemical or biochemical reactions, this novel technology to control the direction of microtubule movement should be applicable to drive micrometer-scaled rotating motors, or to applicable to transport materials between micrometer scaled areas.
{"title":"Molecular circulator driven by motor proteins","authors":"Y. Hiratsuka, T. Tada, K. Oiwa, T. Kanayama, T. Uyeda","doi":"10.1109/IMNC.2000.872772","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872772","url":null,"abstract":"We have fabricated a uni-directional circulator of microtubules. Since it is already technologically possible to attach foreign materials to microtubules using specific chemical or biochemical reactions, this novel technology to control the direction of microtubule movement should be applicable to drive micrometer-scaled rotating motors, or to applicable to transport materials between micrometer scaled areas.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114754603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872710
Y. Saito, H. Yamazaki, I. Mouri
Recently, it is predicted that most of carbon fluorides, nitrogen trifluoride and sulfur hexafluoride, which are widely used to etch silicon related materials and extremely stable, can induce greenhouse effects. In this study, we demonstrate the acceleration of the etching reaction between silicon and the trifluoroacetyl fluoride (CF/sub 3/COF) gas, using remote-plasma-excitation at room temperature. The CF/sub 3/COF is appropriately reactive against water and will be decomposed to trifluoroacetic acid and hydrogen fluoride. Although the value of the global warming potential (GWP) of the CF/sub 3/COF has not been clarified until this time, we believe that this gas would not induce greenhouse effects. In this presentation, the effects of additional oxygen on the etching reaction are mainly investigated.
{"title":"Remote-plasma-enhanced etching of silicon using trifluoro-acetyl-fluoride gas","authors":"Y. Saito, H. Yamazaki, I. Mouri","doi":"10.1109/IMNC.2000.872710","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872710","url":null,"abstract":"Recently, it is predicted that most of carbon fluorides, nitrogen trifluoride and sulfur hexafluoride, which are widely used to etch silicon related materials and extremely stable, can induce greenhouse effects. In this study, we demonstrate the acceleration of the etching reaction between silicon and the trifluoroacetyl fluoride (CF/sub 3/COF) gas, using remote-plasma-excitation at room temperature. The CF/sub 3/COF is appropriately reactive against water and will be decomposed to trifluoroacetic acid and hydrogen fluoride. Although the value of the global warming potential (GWP) of the CF/sub 3/COF has not been clarified until this time, we believe that this gas would not induce greenhouse effects. In this presentation, the effects of additional oxygen on the etching reaction are mainly investigated.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133797517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/imnc.2000.872604
R. Schasfoort, J. Hendrikse, A. van den Berg
Currently, miniaturized devices that apply electro osmotic pumping or electrophoretic separations are mostly constructed by etching small insulating channels for supply and separation on glass substrates. In principle, silicon is a superior construction material in terms of inertness and design flexibility. However, because of its semiconducting properties, the use in high voltage applications like the ones mentioned above is quite limited. In this paper, the use of /spl mu/Transparent Insulating Channel (/spl mu/TIC) technology is demonstrated as a standard procedure to manufacture miniaturized analytical separation devices. This technique, /spl mu/channels having extremely thin, transparent and insulating walls can be fabricated. An overview of the impact of this technology is given, showing the advantages of a fabrication technology that is as flexible as silicon technology for the fabrication of /spl mu/TAS or "lab on a chip" devices. The following basic technology and control parameters will be highlighted. 1. Up to 100 /spl mu/m wide rectangular channels 2. Bosses and leak-free connections to external /spl mu/ fluidics. 3. Web-like structures for inlets/outlets>100 /spl mu/m. 4. Implementation of conductivity electrodes 5. Good thermal dissipation properties of the thin walls 6. Control of the electro osmotic flow by a radial voltage.
{"title":"/spl mu/transparent insulating channels as components for miniaturized chemical separation devices","authors":"R. Schasfoort, J. Hendrikse, A. van den Berg","doi":"10.1109/imnc.2000.872604","DOIUrl":"https://doi.org/10.1109/imnc.2000.872604","url":null,"abstract":"Currently, miniaturized devices that apply electro osmotic pumping or electrophoretic separations are mostly constructed by etching small insulating channels for supply and separation on glass substrates. In principle, silicon is a superior construction material in terms of inertness and design flexibility. However, because of its semiconducting properties, the use in high voltage applications like the ones mentioned above is quite limited. In this paper, the use of /spl mu/Transparent Insulating Channel (/spl mu/TIC) technology is demonstrated as a standard procedure to manufacture miniaturized analytical separation devices. This technique, /spl mu/channels having extremely thin, transparent and insulating walls can be fabricated. An overview of the impact of this technology is given, showing the advantages of a fabrication technology that is as flexible as silicon technology for the fabrication of /spl mu/TAS or \"lab on a chip\" devices. The following basic technology and control parameters will be highlighted. 1. Up to 100 /spl mu/m wide rectangular channels 2. Bosses and leak-free connections to external /spl mu/ fluidics. 3. Web-like structures for inlets/outlets>100 /spl mu/m. 4. Implementation of conductivity electrodes 5. Good thermal dissipation properties of the thin walls 6. Control of the electro osmotic flow by a radial voltage.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115269345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872651
M. Mkrtchyan
Summary form only given. Various scattering phenomena involved with the energetic (100 keV) electrons carrying the mask pattern information to the wafer through the projection optics are discussed. These phenomena can be grouped into three major categories. (i) Elastic electron scattering in the mask responsible for aerial image intensity and contrast, (ii) Inelastic electron scattering in the mask-membrane and its possible negative effects; energy spread (chromatic aberrations), membrane charging, and mask heating. (iii) Coulomb interactions of electrons in the beam (space charge) generating beam blur that links the system throughput and resolution. Analytical models, developed to describe the variety of electron interaction effects, are described briefly while their implication for the development and optimization of the electron projection lithography systems is discussed in detail.
{"title":"Electron scattering and related phenomena in SCALPEL/sup TM/","authors":"M. Mkrtchyan","doi":"10.1109/IMNC.2000.872651","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872651","url":null,"abstract":"Summary form only given. Various scattering phenomena involved with the energetic (100 keV) electrons carrying the mask pattern information to the wafer through the projection optics are discussed. These phenomena can be grouped into three major categories. (i) Elastic electron scattering in the mask responsible for aerial image intensity and contrast, (ii) Inelastic electron scattering in the mask-membrane and its possible negative effects; energy spread (chromatic aberrations), membrane charging, and mask heating. (iii) Coulomb interactions of electrons in the beam (space charge) generating beam blur that links the system throughput and resolution. Analytical models, developed to describe the variety of electron interaction effects, are described briefly while their implication for the development and optimization of the electron projection lithography systems is discussed in detail.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114171822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872615
K. Otaki, H. Oizumi, M. Ito, I. Nishiyama, S. Okazaki
In extreme ultraviolet lithography (EUVL), the reflective type mask is obliquely illuminated, and the oblique angle must be larger with increasing the NA of projection optics. EUV mask has the very thick structure. When such mask is illuminated obliquely, asymmetric diffraction waves occur and these waves make the asymmetric aerial image. This oblique illumination effect depends on the thickness of absorber and the illumination angle. We have been investigated this problem precisely by using the vector diffraction theory and optimized the parameters of the mask and the illumination system.
{"title":"Asymmetric properties of the aerial image in EUVL","authors":"K. Otaki, H. Oizumi, M. Ito, I. Nishiyama, S. Okazaki","doi":"10.1109/IMNC.2000.872615","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872615","url":null,"abstract":"In extreme ultraviolet lithography (EUVL), the reflective type mask is obliquely illuminated, and the oblique angle must be larger with increasing the NA of projection optics. EUV mask has the very thick structure. When such mask is illuminated obliquely, asymmetric diffraction waves occur and these waves make the asymmetric aerial image. This oblique illumination effect depends on the thickness of absorber and the illumination angle. We have been investigated this problem precisely by using the vector diffraction theory and optimized the parameters of the mask and the illumination system.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114956313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872749
S. Okazaki
EUV lithography is the most promising candidate for the fabrication of devices with feature sizes of 70 nm and below. Since October, 1998, ASET has been working on the development of the basic technologies of EUV lithography in cooperation with Prof. H.Kinoshita of the Himeji Institute of Technology. These technologies can be broken down into three categories: exposure system, multilayer mask, and resist process.
{"title":"Recent activities in the development of EUV lithography at ASET","authors":"S. Okazaki","doi":"10.1109/IMNC.2000.872749","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872749","url":null,"abstract":"EUV lithography is the most promising candidate for the fabrication of devices with feature sizes of 70 nm and below. Since October, 1998, ASET has been working on the development of the basic technologies of EUV lithography in cooperation with Prof. H.Kinoshita of the Himeji Institute of Technology. These technologies can be broken down into three categories: exposure system, multilayer mask, and resist process.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124739911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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