Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872639
M. Stewart, S. Burns, G. Schmid, C. Willson
Upon ultraviolet exposure chemically amplified resists generate small, catalytic amounts of acid. During the post exposure bake, this acid is used to catalyze a solubility switching reaction that allows for the eventual development of latent image. The potential exists for acid catalyst to migrate from exposed regions into unexposed regions during the post exposure baking step and, thus cause feature width spread, or loss of critical dimension control. As features decrease in size, the spread caused by acid migration becomes a proportionately larger problem. This paper describes the results of experimental investigations into the fundamental mechanisms of acid transport. A fuller understanding of these mechanisms can serve both as a guide for optimizing current resist systems and for designing next generation resists.
{"title":"Generation and relaxation of free volume during the post exposure bake","authors":"M. Stewart, S. Burns, G. Schmid, C. Willson","doi":"10.1109/IMNC.2000.872639","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872639","url":null,"abstract":"Upon ultraviolet exposure chemically amplified resists generate small, catalytic amounts of acid. During the post exposure bake, this acid is used to catalyze a solubility switching reaction that allows for the eventual development of latent image. The potential exists for acid catalyst to migrate from exposed regions into unexposed regions during the post exposure baking step and, thus cause feature width spread, or loss of critical dimension control. As features decrease in size, the spread caused by acid migration becomes a proportionately larger problem. This paper describes the results of experimental investigations into the fundamental mechanisms of acid transport. A fuller understanding of these mechanisms can serve both as a guide for optimizing current resist systems and for designing next generation resists.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122501508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872647
T. Hori
The AURORA-2S (A2S) SR ring is designed for X-ray lithography. The current status of A2S is shown including the results of commissioning and long-term running. The outstanding feature of A2S lies in normal-conducting 180/spl deg/ bending magnets to generate 2.7 T, where the stored beam of 700 MeV circulates at a radius of 0.87 m. A2S is designed to produce quite uniform SR for every direction in the bending magnets. Simplified operation and maintenance procedures other key factors for commercial use, which has successfully achieved by eliminating superconducting technology from the system.
{"title":"Performance of \"AURORA-2S\" [for X-ray lithography]","authors":"T. Hori","doi":"10.1109/IMNC.2000.872647","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872647","url":null,"abstract":"The AURORA-2S (A2S) SR ring is designed for X-ray lithography. The current status of A2S is shown including the results of commissioning and long-term running. The outstanding feature of A2S lies in normal-conducting 180/spl deg/ bending magnets to generate 2.7 T, where the stored beam of 700 MeV circulates at a radius of 0.87 m. A2S is designed to produce quite uniform SR for every direction in the bending magnets. Simplified operation and maintenance procedures other key factors for commercial use, which has successfully achieved by eliminating superconducting technology from the system.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126472293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872678
M. Narihiro, H. Wakabayashi, M. Ueki, K. Arai, T. Ogura, Y. Ochiai, T. Mogami
Electron Beam (EB)/Deep UV (DUV) intra-level mix and match (IL M&M) is one of the most attractive lithographic techniques, because it can achieve patterns which are smaller than the limit of optical resolution, and higher throughput than EB direct-writing. We have successfully fabricated sub-50 nm patterns on an 8-inch Si wafer by EB/DUV IL M&M with the JBX-9300FS advanced point-electron-beam system (acceleration voltage: 50 kV/100 kV, maximum beam-scanning rate: 25MHz, field size: 1mmx1mm at 50 kV/0.5 mm/spl times/0.5 mm at 100 kV, wafer size: 6/8/12 inch, and an in-line developer is included) and a conventional KrF stepper. We have developed a new method of preparing patterns to ensure that the EB patterns a reconnected with the KrF patterns. Our method has the advantage of making the arbitrary sized overlaps without depending on the minimum EB pattern size, compared to the method by Magoshi et al. We use a length criterion L/sub in/ to separate the original set of patterns into EB patterns and KrF patterns. Over laps a regenerated by a Boolean "AND" operation on the shifted EB patterns and the KrF patterns.
{"title":"Intralevel mix and match lithography for sub-100 nm CMOS devices using the JBX-9300FS point-electron-beam system","authors":"M. Narihiro, H. Wakabayashi, M. Ueki, K. Arai, T. Ogura, Y. Ochiai, T. Mogami","doi":"10.1109/IMNC.2000.872678","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872678","url":null,"abstract":"Electron Beam (EB)/Deep UV (DUV) intra-level mix and match (IL M&M) is one of the most attractive lithographic techniques, because it can achieve patterns which are smaller than the limit of optical resolution, and higher throughput than EB direct-writing. We have successfully fabricated sub-50 nm patterns on an 8-inch Si wafer by EB/DUV IL M&M with the JBX-9300FS advanced point-electron-beam system (acceleration voltage: 50 kV/100 kV, maximum beam-scanning rate: 25MHz, field size: 1mmx1mm at 50 kV/0.5 mm/spl times/0.5 mm at 100 kV, wafer size: 6/8/12 inch, and an in-line developer is included) and a conventional KrF stepper. We have developed a new method of preparing patterns to ensure that the EB patterns a reconnected with the KrF patterns. Our method has the advantage of making the arbitrary sized overlaps without depending on the minimum EB pattern size, compared to the method by Magoshi et al. We use a length criterion L/sub in/ to separate the original set of patterns into EB patterns and KrF patterns. Over laps a regenerated by a Boolean \"AND\" operation on the shifted EB patterns and the KrF patterns.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128482326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872631
K.M. Chang, C. F. Jou, J.J. Luo, L. Kuo, I. Deng, C. Liang, N. Luhmann
Cantilever type microswitches have advantages of low electrostatic actuation voltage and high isolation in RF applications. Of particular importance, they can be integrated with microstrip lines in series or shunt connection mode for building an RF circuit or system directly. This article presents an idea for a switch with a single pole, single throw configuration (SPST).
{"title":"Fabrication of cantilever type microswitches using surface micromachining technology","authors":"K.M. Chang, C. F. Jou, J.J. Luo, L. Kuo, I. Deng, C. Liang, N. Luhmann","doi":"10.1109/IMNC.2000.872631","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872631","url":null,"abstract":"Cantilever type microswitches have advantages of low electrostatic actuation voltage and high isolation in RF applications. Of particular importance, they can be integrated with microstrip lines in series or shunt connection mode for building an RF circuit or system directly. This article presents an idea for a switch with a single pole, single throw configuration (SPST).","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133084446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872659
H. Yamashita, E. Munro, J. Rouse, H. Kobinata, K. Nakajima, H. Nozue
Electron projection lithography (EPL), such as PREVAIL and SCALPEL, are among the candidates for next generation lithography. We modified the discrete Coulomb interaction simulator BOERSCH to be capable of incorporating the treatment of mask-scattered electrons into the simulation domain. Annular apertures of arbitrary number and size also can be set as the limiting aperture in addition to the usual round shape. Using this simulator, not only the resolution but also the performance of the SCALPEL GHOST proximity effect correction (PEC) can be evaluated. Therefore, this modified BOERSCH can provide almost perfect functions necessary for the EPL process development.
{"title":"Simulation of Coulomb interactions in electron projection lithography using scattering contrast","authors":"H. Yamashita, E. Munro, J. Rouse, H. Kobinata, K. Nakajima, H. Nozue","doi":"10.1109/IMNC.2000.872659","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872659","url":null,"abstract":"Electron projection lithography (EPL), such as PREVAIL and SCALPEL, are among the candidates for next generation lithography. We modified the discrete Coulomb interaction simulator BOERSCH to be capable of incorporating the treatment of mask-scattered electrons into the simulation domain. Annular apertures of arbitrary number and size also can be set as the limiting aperture in addition to the usual round shape. Using this simulator, not only the resolution but also the performance of the SCALPEL GHOST proximity effect correction (PEC) can be evaluated. Therefore, this modified BOERSCH can provide almost perfect functions necessary for the EPL process development.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133201722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872734
A. Yoshigoe, M. Sano, Y. Teraoka
The translational kinetic energy (Et) of O2, incident molecules can considerably affect the probability of dissociative adsorption and enhance surface chemical reactions. Supersonic molecular beams (SSMB ) is a fascinating method to control gas molecules with well-defined spatial distribution, particle flux and ( translational ) kinetic energies. The SSMB is also important technique for surface scientists to study adsorption energy barrier and sticking probabilities of incident particles on solid surfaqes. A great deal of experimental and theoretical work has been done to investigate kinetics and dynamics of O2, adsorption on Si(001) surface, however, little number of molecular beam work with greater than Et = 1.0eV of O2, on the initial oxidation of Si(001) has been published. We report the O2, sticking on Si(001) surface ( passive oxidation ) and the SiO desorption ( active oxidation ) induced by translational kinetic energies of O2, (up to 3.0 eV) using the SSMB.
{"title":"Initial oxidation of Si[001] induced by translational kinetic energy of O/sub 2/ supersonic molecula","authors":"A. Yoshigoe, M. Sano, Y. Teraoka","doi":"10.1109/IMNC.2000.872734","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872734","url":null,"abstract":"The translational kinetic energy (Et) of O2, incident molecules can considerably affect the probability of dissociative adsorption and enhance surface chemical reactions. Supersonic molecular beams (SSMB ) is a fascinating method to control gas molecules with well-defined spatial distribution, particle flux and ( translational ) kinetic energies. The SSMB is also important technique for surface scientists to study adsorption energy barrier and sticking probabilities of incident particles on solid surfaqes. A great deal of experimental and theoretical work has been done to investigate kinetics and dynamics of O2, adsorption on Si(001) surface, however, little number of molecular beam work with greater than Et = 1.0eV of O2, on the initial oxidation of Si(001) has been published. We report the O2, sticking on Si(001) surface ( passive oxidation ) and the SiO desorption ( active oxidation ) induced by translational kinetic energies of O2, (up to 3.0 eV) using the SSMB.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133377244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872627
A. Oki, S. Adachi, Y. Takamura, K. Ishihara, H. Ogawa, T. Ichiki, Y. Horiike
To create the "health care chip", which is an intelligent micro analytical system to detect various human health markers from a small droplet of blood, we are now developing a measurement system of the markers in electroosmosis injected serum employing chemical sensors conjugated to the microcapillary made by a quartz plate. The complete system requires a painlessly collection of the blood by a needle, separation of serum from such small amount of blood, biocompatibility of the capillary inner surface and implementation of these technologies to the real health care chip. This paper reports recent studies regarding these elemental issues.
{"title":"Development of elemental technologies for fabricating the health care chip","authors":"A. Oki, S. Adachi, Y. Takamura, K. Ishihara, H. Ogawa, T. Ichiki, Y. Horiike","doi":"10.1109/IMNC.2000.872627","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872627","url":null,"abstract":"To create the \"health care chip\", which is an intelligent micro analytical system to detect various human health markers from a small droplet of blood, we are now developing a measurement system of the markers in electroosmosis injected serum employing chemical sensors conjugated to the microcapillary made by a quartz plate. The complete system requires a painlessly collection of the blood by a needle, separation of serum from such small amount of blood, biocompatibility of the capillary inner surface and implementation of these technologies to the real health care chip. This paper reports recent studies regarding these elemental issues.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133442840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872610
M. Ito, T. Ogawa, K. Otaki, I. Nishiyama, S. Okazaki, T. Terasawa
An extreme ultraviolet (EUV) mask consists of a substrate coated with a reflective multilayer and a patterned absorber layer on top. Particles and bumps on the substrate can cause structural disorder in the multilayer, resulting in multilayer defects. Particles generated during deposition are another possible a source of such defects. Since these defects are virtually impossible to repair, they are the most serious problem in EUV mask fabrication. To determine whether or not a defect is printable, the reflected field in the plane of the mask must be known. This can be calculated rigorously by means of electromagnetic simulation, but the massive computing power required makes this method impractical for 3-dimensional analysis. In this study, we devised a simple simulation method based on Fresnel formulas to calculate the amplitude and phase shift for multilayer defects.
{"title":"Simulation of multilayer defects in EUV masks","authors":"M. Ito, T. Ogawa, K. Otaki, I. Nishiyama, S. Okazaki, T. Terasawa","doi":"10.1109/IMNC.2000.872610","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872610","url":null,"abstract":"An extreme ultraviolet (EUV) mask consists of a substrate coated with a reflective multilayer and a patterned absorber layer on top. Particles and bumps on the substrate can cause structural disorder in the multilayer, resulting in multilayer defects. Particles generated during deposition are another possible a source of such defects. Since these defects are virtually impossible to repair, they are the most serious problem in EUV mask fabrication. To determine whether or not a defect is printable, the reflected field in the plane of the mask must be known. This can be calculated rigorously by means of electromagnetic simulation, but the massive computing power required makes this method impractical for 3-dimensional analysis. In this study, we devised a simple simulation method based on Fresnel formulas to calculate the amplitude and phase shift for multilayer defects.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122229582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872619
M. Tuda, M. Kinugawa, H. Ootera, K. Marumoto
This paper presents an electrochemical surface cleaning (ECSC) technique for x-ray masks employing amorphous WN/sub x/ absorbers. The electrostatic surface potential of the mask in alkaline solutions is precisely controlled for preventing from corrosion or etching of absorber films during cleaning, thus leading to almost no change in pattern dimension and film stress between before and after cleaning.
{"title":"A new cleaning technique for x-ray masks in alkaline solutions by control of surface potential","authors":"M. Tuda, M. Kinugawa, H. Ootera, K. Marumoto","doi":"10.1109/IMNC.2000.872619","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872619","url":null,"abstract":"This paper presents an electrochemical surface cleaning (ECSC) technique for x-ray masks employing amorphous WN/sub x/ absorbers. The electrostatic surface potential of the mask in alkaline solutions is precisely controlled for preventing from corrosion or etching of absorber films during cleaning, thus leading to almost no change in pattern dimension and film stress between before and after cleaning.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122964415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-07-11DOI: 10.1109/IMNC.2000.872694
T. Tsutsumi, K. Ishii, H. Hiroshima, S. Kanemaru, E. Suzuki, K. Tomizawa
Recently, ultra-small Si devices utilizing a quantum-size and/or Coulomb blockade effect have been received much attention to open a new Si device stream. This paper describes a fabrication technology of Si nanodot nanowire memory transistors with side gates. For the first time, an inorganic EB resist process was applied to fabricate Si nanowires. The Si nanodevice has a Si nanowire, Si nanodots, and a poly-Si nanogate and works as a single electron memory transistor.
{"title":"Fabrication technology of Si nanodot nanowire memory transistors using an inorganic EB resist process","authors":"T. Tsutsumi, K. Ishii, H. Hiroshima, S. Kanemaru, E. Suzuki, K. Tomizawa","doi":"10.1109/IMNC.2000.872694","DOIUrl":"https://doi.org/10.1109/IMNC.2000.872694","url":null,"abstract":"Recently, ultra-small Si devices utilizing a quantum-size and/or Coulomb blockade effect have been received much attention to open a new Si device stream. This paper describes a fabrication technology of Si nanodot nanowire memory transistors with side gates. For the first time, an inorganic EB resist process was applied to fabricate Si nanowires. The Si nanodevice has a Si nanowire, Si nanodots, and a poly-Si nanogate and works as a single electron memory transistor.","PeriodicalId":270640,"journal":{"name":"Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122977534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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