Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733550
M. A. Billaha, M. Das
Aim of the present work is to investigate the performance of GaAs/AlxGa1-xAs quantum well infrared photodetector (QWIP) using theoretical modeling via transfer matrix method and using professional device simulation software, APSYS. Model is verified with experimental data and various performance characteristics are obtained for intersubband transition in QWIP. Peak absorption occurs at wavelength of 8.75 μm using APSYS and at 8.52 μm using theoretical calculation.
{"title":"Performance analysis of III–V based long wavelength QWIP","authors":"M. A. Billaha, M. Das","doi":"10.1109/ICMAP.2013.6733550","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733550","url":null,"abstract":"Aim of the present work is to investigate the performance of GaAs/AlxGa1-xAs quantum well infrared photodetector (QWIP) using theoretical modeling via transfer matrix method and using professional device simulation software, APSYS. Model is verified with experimental data and various performance characteristics are obtained for intersubband transition in QWIP. Peak absorption occurs at wavelength of 8.75 μm using APSYS and at 8.52 μm using theoretical calculation.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131606990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733460
Babu Lal Shahu, N. Chattoraj, S. Pal
A Novel coplanar waveguide (CPW) fed Ultra Wideband (UWB) antenna is presented. The proposed antenna is designed on RT/duriod 5880 substrate with thickness of 1.57 mm and relative permittivity of 2.2 having loss tangent 0.0009 using a second iteration Sierpinski carpet fractal with overall dimension of 37 mm × 46 mm × 1.57 mm. The designed antenna offers a good impedance bandwidth from 3.1 to 11 GHz. The presented antenna has omnidirectional radiation pattern and good gain flatness suitable for UWB applications.
提出了一种新型共面波导馈电超宽带(UWB)天线。该天线设计在厚度为1.57 mm、相对介电常数为2.2、损耗正切为0.0009的RT/ period 5880衬底上，采用二次迭代Sierpinski地毯分形设计，整体尺寸为37 mm × 46 mm × 1.57 mm。设计的天线具有3.1 ~ 11ghz的良好阻抗带宽。该天线具有全向辐射方向图和良好的增益平坦度，适合于超宽带应用。
{"title":"A novel CPW fed Sierpinski carpet fractal UWB slot antenna","authors":"Babu Lal Shahu, N. Chattoraj, S. Pal","doi":"10.1109/ICMAP.2013.6733460","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733460","url":null,"abstract":"A Novel coplanar waveguide (CPW) fed Ultra Wideband (UWB) antenna is presented. The proposed antenna is designed on RT/duriod 5880 substrate with thickness of 1.57 mm and relative permittivity of 2.2 having loss tangent 0.0009 using a second iteration Sierpinski carpet fractal with overall dimension of 37 mm × 46 mm × 1.57 mm. The designed antenna offers a good impedance bandwidth from 3.1 to 11 GHz. The presented antenna has omnidirectional radiation pattern and good gain flatness suitable for UWB applications.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123589905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733454
B. Rahman, M. Uthman, A. Quadir, C. Markides, C. Themistos
A rigorous full-vectorial modal solution approach based on the computationally efficient finite element method is used to find the propagation properties of THz waveguides. Design approaches are presented to reduce the modal loss of such waveguides. Designs of several THz devices, including quantum cascade lasers, power splitters and narrow-band filters are also presented.
{"title":"Design of low-loss waveguides and devices for the emerging THz technologies","authors":"B. Rahman, M. Uthman, A. Quadir, C. Markides, C. Themistos","doi":"10.1109/ICMAP.2013.6733454","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733454","url":null,"abstract":"A rigorous full-vectorial modal solution approach based on the computationally efficient finite element method is used to find the propagation properties of THz waveguides. Design approaches are presented to reduce the modal loss of such waveguides. Designs of several THz devices, including quantum cascade lasers, power splitters and narrow-band filters are also presented.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124629001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733509
Vinit Kumar Gupta, P. Kumar, C. Rao
Directional couplers realized in microstrip parallel coupled line configuration exhibits very poor directivity. Inhomogeneous nature of microstrip circuits generate even and odd modes of wave propagation having different phase velocities, which in turn leads to the degradation in directivity. This paper presents the design and development of a compact, wideband, low insertion loss 20 dB microstrip coupler on FR4 substrate having better than 25 dB directivity at L band. Idea is based on the fact that the wiggly or slotty structure raises the odd mode inductance more strongly than that of the even mode due to the different field distributions between both modes and equalizes the even and odd mode characteristic impedances. Reactive loading based slow wave structure is used to further miniaturize the circuit. Directivity of better than 28 dB, maximum insertion loss of 0.4 dB, coupling flatness of ± .25 dB and 25 % reduction in size w.r.t. conventional parallel coupled line coupler were observed in the fabricated circuit over the band of 1250±500 MHz.
{"title":"A novel miniaturized, wideband, high directivity microstrip coupler on FR4","authors":"Vinit Kumar Gupta, P. Kumar, C. Rao","doi":"10.1109/ICMAP.2013.6733509","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733509","url":null,"abstract":"Directional couplers realized in microstrip parallel coupled line configuration exhibits very poor directivity. Inhomogeneous nature of microstrip circuits generate even and odd modes of wave propagation having different phase velocities, which in turn leads to the degradation in directivity. This paper presents the design and development of a compact, wideband, low insertion loss 20 dB microstrip coupler on FR4 substrate having better than 25 dB directivity at L band. Idea is based on the fact that the wiggly or slotty structure raises the odd mode inductance more strongly than that of the even mode due to the different field distributions between both modes and equalizes the even and odd mode characteristic impedances. Reactive loading based slow wave structure is used to further miniaturize the circuit. Directivity of better than 28 dB, maximum insertion loss of 0.4 dB, coupling flatness of ± .25 dB and 25 % reduction in size w.r.t. conventional parallel coupled line coupler were observed in the fabricated circuit over the band of 1250±500 MHz.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127392561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733497
B. Sahu, R. Singh, S. Singh, P. Tripathi
The simulation and experimental studies of a compact dual segment cylindrical dielectric resonator antenna (DRA) for X-band applications are presented in this paper. The antenna consists of Teflon (εr = 2.1) as lower segment and ceramic material (Sr La2 Mg2 W2 O12) of dielectric constant εr = 22 and loss tangent tan δ = 0.0021 as upper segment. The simulation study of the antenna is carried out using Ansoft's HFSS software. Parametric study of the antenna has been carried out by varying the Teflon and probe heights. The simulated and measured bandwidths of the proposed antenna are 1.11 GHz and 1.69 GHz respectively whereas corresponding values of average gain are 6.39 dB and 6.43 dB. The broadside radiation patterns are obtained (in both E-and H-planes) in the applicable frequency range with fairly low cross-polarization levels in E-plane. The experimental results are in good agreement with simulated results.
{"title":"Compact dual segment cylindrical dielectric resonator antenna for X-band applications","authors":"B. Sahu, R. Singh, S. Singh, P. Tripathi","doi":"10.1109/ICMAP.2013.6733497","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733497","url":null,"abstract":"The simulation and experimental studies of a compact dual segment cylindrical dielectric resonator antenna (DRA) for X-band applications are presented in this paper. The antenna consists of Teflon (εr = 2.1) as lower segment and ceramic material (Sr La2 Mg2 W2 O12) of dielectric constant εr = 22 and loss tangent tan δ = 0.0021 as upper segment. The simulation study of the antenna is carried out using Ansoft's HFSS software. Parametric study of the antenna has been carried out by varying the Teflon and probe heights. The simulated and measured bandwidths of the proposed antenna are 1.11 GHz and 1.69 GHz respectively whereas corresponding values of average gain are 6.39 dB and 6.43 dB. The broadside radiation patterns are obtained (in both E-and H-planes) in the applicable frequency range with fairly low cross-polarization levels in E-plane. The experimental results are in good agreement with simulated results.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130558855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733538
K. Majumder, N. Das
Bandwidth calculation of Si1-yGey n+-i-p+ avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers considering dead-space effect. In the analysis, the depletion region is discretized into equal energy segments to take into account the discontinuous nature of impact ionization in the multiplication layer due to dead-space effect, and carrier diffusion from undepleted regions is considered to study the effect of low bias on the frequency response. Carrier distribution within the structure is obtained by numerical solution of coupled equations and recurrence relations. The computed results are used to investigate the effect of Ge-composition (y) on the bandwidth of a Si1-yGey APD having thin multiplication layer. Results show that at high gain region, for a fixed applied bias, frequency response decreases with the increase in Ge-content. It is also seen that at moderate gain region, if the bandwidth is RC dominated then the bandwidth decreases with increase in Ge-content.
{"title":"Effect of Ge-composition on the frequency response of a thin layer Si1−yGey avalanche photodiode","authors":"K. Majumder, N. Das","doi":"10.1109/ICMAP.2013.6733538","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733538","url":null,"abstract":"Bandwidth calculation of Si1-yGey n+-i-p+ avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers considering dead-space effect. In the analysis, the depletion region is discretized into equal energy segments to take into account the discontinuous nature of impact ionization in the multiplication layer due to dead-space effect, and carrier diffusion from undepleted regions is considered to study the effect of low bias on the frequency response. Carrier distribution within the structure is obtained by numerical solution of coupled equations and recurrence relations. The computed results are used to investigate the effect of Ge-composition (y) on the bandwidth of a Si1-yGey APD having thin multiplication layer. Results show that at high gain region, for a fixed applied bias, frequency response decreases with the increase in Ge-content. It is also seen that at moderate gain region, if the bandwidth is RC dominated then the bandwidth decreases with increase in Ge-content.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130601938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733515
Reena Sharma, S. Raghuwanshi
Optical fiber is the medium in which signals can be transmitted and distributed with high bandwidth and very low losses. The main optical sources are LED and LASER. A semiconductor laser typically has spectral width about 20 to 100 times less compared to LED. The laser was the first device capable of amplifying light waves themselves. The emitted laser light is a spatially coherent, narrow low-divergence beam. There are lasers that emit a broad spectrum of light or emit different wavelengths of light simultaneously. Thus improving the efficiency of lasers is of great importance through the entire optoelectronics field, as laser based communication can support much higher data rates. In this work Quantum-Well LASER model based on the standard rate equations is being developed for analyzing and improving the efficiency using the MATLAB Simulink platform. The presented model can be incorporated for the simulation of the optimized optical system for future need of high data rate.
{"title":"MATLAB simulink based test bed of QW LASER for optical communication system","authors":"Reena Sharma, S. Raghuwanshi","doi":"10.1109/ICMAP.2013.6733515","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733515","url":null,"abstract":"Optical fiber is the medium in which signals can be transmitted and distributed with high bandwidth and very low losses. The main optical sources are LED and LASER. A semiconductor laser typically has spectral width about 20 to 100 times less compared to LED. The laser was the first device capable of amplifying light waves themselves. The emitted laser light is a spatially coherent, narrow low-divergence beam. There are lasers that emit a broad spectrum of light or emit different wavelengths of light simultaneously. Thus improving the efficiency of lasers is of great importance through the entire optoelectronics field, as laser based communication can support much higher data rates. In this work Quantum-Well LASER model based on the standard rate equations is being developed for analyzing and improving the efficiency using the MATLAB Simulink platform. The presented model can be incorporated for the simulation of the optimized optical system for future need of high data rate.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"2017 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131682974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733541
S. Bhattacharyya, A. Deyasi, N. Das
In this paper, intersubband transition energy and oscillator strength of a semiconductor quantum disk are analytically computed by solving time-independent Schrödinger equation in presence of axial electric field. Results show that transition energy increases with increase of thickness but decreases with increasing radius. The external field alters the potential energy profile of the structure and thus controls the intersubband oscillator strength inside the disk. The oscillator strength between the two lowest subbands decreases with electric field, and increases with thickness of the disk. Results are computed considering first-order band nonparabolicity, and compared with parabolic overestimation. Change in oscillator strength indicates the possibility of wavelength tuning by electric field.
{"title":"Electric field effect on intersubband oscillator strength of semiconductor quantum disk","authors":"S. Bhattacharyya, A. Deyasi, N. Das","doi":"10.1109/ICMAP.2013.6733541","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733541","url":null,"abstract":"In this paper, intersubband transition energy and oscillator strength of a semiconductor quantum disk are analytically computed by solving time-independent Schrödinger equation in presence of axial electric field. Results show that transition energy increases with increase of thickness but decreases with increasing radius. The external field alters the potential energy profile of the structure and thus controls the intersubband oscillator strength inside the disk. The oscillator strength between the two lowest subbands decreases with electric field, and increases with thickness of the disk. Results are computed considering first-order band nonparabolicity, and compared with parabolic overestimation. Change in oscillator strength indicates the possibility of wavelength tuning by electric field.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125548628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733512
L. Kumar, E. Manikanta, C. Leela, P. P. Kiran
The detection and analysis of the radio frequency (RF) waves emitted by the nanosecond laser breakdown of atmospheric air and metal (aluminum and copper) targets is presented. The emissions from different target materials were observed to be spectral selective with specific dependence on laser and antenna polarization. From the laser produced plasma (LPP) of atmospheric air, the RF output was found to be increasing with the input laser energy up to certain value, beyond which almost no emission was observed over the frequency range used in this study. This effect is attributed to the modification in the net induced dipole moment due to the multiple plasma sources in the LPP at higher input laser energies. Between the metals studied, RF emissions from copper were relatively higher than that of aluminum because of the better plasma conductivity of copper. Further studies may lead to an efficient technique for standoff material identification from the RF signature peaks.
{"title":"RF emissions from laser breakdown of target materials","authors":"L. Kumar, E. Manikanta, C. Leela, P. P. Kiran","doi":"10.1109/ICMAP.2013.6733512","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733512","url":null,"abstract":"The detection and analysis of the radio frequency (RF) waves emitted by the nanosecond laser breakdown of atmospheric air and metal (aluminum and copper) targets is presented. The emissions from different target materials were observed to be spectral selective with specific dependence on laser and antenna polarization. From the laser produced plasma (LPP) of atmospheric air, the RF output was found to be increasing with the input laser energy up to certain value, beyond which almost no emission was observed over the frequency range used in this study. This effect is attributed to the modification in the net induced dipole moment due to the multiple plasma sources in the LPP at higher input laser energies. Between the metals studied, RF emissions from copper were relatively higher than that of aluminum because of the better plasma conductivity of copper. Further studies may lead to an efficient technique for standoff material identification from the RF signature peaks.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"60 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126089763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICMAP.2013.6733522
J. Mishra, V. Priye
A space division multiplexed 1 × 4 and 2 × 4 multicore fiber with α-index profile is designed to meet the stringent requirements of high bandwidth density optical interconnects. By employing the proposed model, the effect of index parameter α on the crosstalk of multicore fiber is investigated under bent condition. Attributes of bend induced crosstalk is evaluated for variation in core to core pitch distances.
{"title":"Estimation of crosstalk in α-index profile multicore fibers for optical interconnect applications","authors":"J. Mishra, V. Priye","doi":"10.1109/ICMAP.2013.6733522","DOIUrl":"https://doi.org/10.1109/ICMAP.2013.6733522","url":null,"abstract":"A space division multiplexed 1 × 4 and 2 × 4 multicore fiber with α-index profile is designed to meet the stringent requirements of high bandwidth density optical interconnects. By employing the proposed model, the effect of index parameter α on the crosstalk of multicore fiber is investigated under bent condition. Attributes of bend induced crosstalk is evaluated for variation in core to core pitch distances.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123849505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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