ACS Applied Electronic Materials最新文献_第3页

Removing Metallic Lead Defects in the Surface Layer of Lead Halide Perovskite Films Using a Pulsed UV Laser for Enhancing the Performance of Perovskite Solar Cells 利用脉冲紫外激光去除卤化铅过氧化物薄膜表层的金属铅缺陷以提高过氧化物太阳能电池的性能

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials

Pub Date : 2024-06-21 DOI: 10.1021/acsaelm.4c00218

Mengyu Fu, Xueyan Shan, Shimao Wang, Xiao Zhao, Ruhua Tao, Libing You, Zanhong Deng, Xiaodong Fang, Gang Meng

Metallic lead (Pb⁰) defects, commonly formed during the deposition process of lead halide perovskite films, are one of the important factors affecting the power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs). Therefore, eliminating or passivating the Pb⁰ defects in the perovskite light-absorbing layers is imperative and effective for enhancing PSC performance. Here, a simple, rapid, and noncontact approach based on a pulsed UV laser utilizing its advantages of high photon energy and shallow penetration depth has been proposed for removing Pb⁰ defects on the surface of perovskite films. The X-ray photoelectron spectroscopy spectrum indicated that the peaks of Pb⁰ disappeared completely after UV laser irradiation with a laser energy density of 2.26 mJ cm^–2, suggesting that the Pb⁰ defects on the surface layer of perovskite films have been effectively removed by fine-tuning the energy density of the UV laser. Furthermore, the average PCE of PSCs increases from 18.65 to 20.72%.

金属铅（Pb0）缺陷通常是在卤化铅包晶石薄膜沉积过程中形成的，是影响包晶石太阳能电池（PSC）功率转换效率（PCE）和稳定性的重要因素之一。因此，消除或钝化包晶吸光层中的 Pb0 缺陷是提高 PSC 性能的当务之急和有效方法。本文提出了一种基于脉冲紫外激光的简单、快速和非接触式方法，利用其光子能量高和穿透深度浅的优势来消除包晶薄膜表面的 Pb0 缺陷。X 射线光电子能谱光谱显示，在激光能量密度为 2.26 mJ cm-2 的紫外激光照射下，Pb0 的峰值完全消失，这表明通过微调紫外激光的能量密度，可以有效地去除包晶薄膜表层的 Pb0 缺陷。此外，PSCs 的平均 PCE 从 18.65% 增加到 20.72%。

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引用次数: 0

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition 通过金属有机化学气相沉积实现 Ga2O3 异质外延和材料生长的热力学

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials

Pub Date : 2024-06-21 DOI: 10.1021/acsaelm.4c00535

Indraneel Sanyal, Arpit Nandi, David Cherns, Martin Kuball

Heteroepitaxy of gallium oxide (Ga₂O₃) is gaining popularity to address the absence of p-type doping, limited thermal conductivity of Ga₂O₃ epilayers, and toward realizing high-quality p-n heterojunction. During the growth of β-Ga₂O₃ on 4H-SiC (0001) substrates using metal–organic chemical vapor deposition, we observed formation of incomplete, misoriented particles when the layer was grown at a temperature between 650 °C and 750 °C. We propose a thermodynamic model for Ga₂O₃ heteroepitaxy on foreign substrates which shows that the energy cost of growing β-Ga₂O₃ on 4H-SiC is slightly lower as compared to sapphire substrates, suggesting similar high-temperature growth as sapphire, typically in the range of 850 °C–950 °C, that can be used for the growth of β-Ga₂O₃ on SiC. A two-step modified growth method was developed where the nucleation layer was grown at 750 °C followed by a buffer layer grown at various temperatures from 920 °C to 950 °C. 2θ–ω scan of X-ray diffraction (XRD) and transmission electron microscope images confirm the β-polymorph of Ga₂O₃ with dominant peaks in the (−201) direction. The buffer layer grown at 950 °C using a “ramp-growth” technique exhibits root-mean-square surface roughness of 3 nm and full width of half maxima of XRD rocking curve as low as 0.79°, comparable to the most mature β-Ga₂O₃ heteroepitaxy on sapphire, as predicted by the thermodynamic model. Finally, the interface energy of an average Ga₂O₃ island grown on 4H-SiC is calculated to be 0.2 J/m² from the cross-section scanning transmission electron microscope image, following the Wulff-Kaishew theorem of the equilibrium island shape.

为了解决氧化镓（Ga2O3）外延层缺乏 p 型掺杂、热导率有限的问题，以及为了实现高质量 p-n 异质结，氧化镓（Ga2O3）的异质外延越来越受欢迎。在使用金属有机化学气相沉积法在 4H-SiC (0001) 基底上生长 β-Ga2O3 的过程中，我们观察到在 650 ℃ 至 750 ℃ 的温度下生长该层时会形成不完整的、方向错误的颗粒。我们提出了在外来衬底上进行 Ga2O3 异质外延的热力学模型，该模型表明，与蓝宝石衬底相比，在 4H-SiC 上生长 β-Ga2O3 的能量成本略低，这表明在 SiC 上生长 β-Ga2O3 可采用与蓝宝石类似的高温生长，通常在 850 ℃-950 ℃ 之间。我们开发了一种两步修正生长法，在 750 ℃ 下生长成核层，然后在 920 ℃ 至 950 ℃ 的不同温度下生长缓冲层。X 射线衍射 (XRD) 的 2θ-ω 扫描和透射电子显微镜图像证实了 Ga2O3 的 β 多晶体，在 (-201) 方向上有主要峰值。采用 "斜坡生长 "技术在 950 ℃ 生长的缓冲层的均方根表面粗糙度为 3 nm，X 射线衍射摇摆曲线的半最大值全宽低至 0.79°，与热力学模型预测的蓝宝石上最成熟的 β-Ga2O3 异质外延相当。最后，根据平衡岛形状的 Wulff-Kaishew 定理，通过横截面扫描透射电子显微镜图像计算出生长在 4H-SiC 上的平均 Ga2O3 岛的界面能为 0.2 J/m2。

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引用次数: 0

High-Performance Supercapacitor with Plasma-Assisted AlN and Graphitic Carbon Nitride Composite Electrode 采用等离子体辅助氮化铝和氮化石墨碳复合电极的高性能超级电容器

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials

Pub Date : 2024-06-21 DOI: 10.1021/acsaelm.4c00632

Kumaresan Lakshmanan, Selvakumar Chidambaram, Shanmugavelayutham Gurusamy

Developing low-cost, highly conductive, and porous electrode materials for superior electrochemical energy storage applications is indeed a challenging task, particularly in large-scale production without any impurities. The present investigation centers on the synthesis of a mesoporous nanocomposite material comprising highly conductive graphitic carbon nitride (g-CN) enveloping aluminum nitride (AlN) nanoparticles, denoted as AlN/g-CN, designed for enhanced supercapacitor performance. The AlN/g-CN nanocomposite was synthesized through a thermal plasma arc discharge process utilizing nitrogen (N₂) and ammonia (NH₃) gas environments, starting with AlN nanoparticles. Concurrently, the g-CN component was synthesized using a straightforward pyrolysis approach starting from melamine. Subsequently, the formation of the highly mesoporous AlN/g-CN nanocomposite was accomplished via a facile ultrasonication process. The phase, crystal structure, morphology, elemental composition, and chemical state analysis of the prepared sample were investigated. The electrochemical performance of the prepared samples, including AlN, g-CN, and AlN/g-CN electrodes, was assessed for their suitability in electrochemical capacitor applications. Notably, the AlN/g-CN nanocomposites exhibited remarkable electrochemical pseudocapacitive behavior, showcasing a substantially higher specific capacitance of 434.1 F/g at a current density of 1 A/g. Additionally, the AlN/g-CN electrode displayed outstanding cycling stability, retaining 93.2% of its initial capacitance after 5000 charge–discharge cycles at a current density of 10 A/g. The maximum energy density of 6.52 Wh/kg is achieved at a power density of 269.7 W/kg. These findings underscore the potential of mesoporous AlN/g-CN nanocomposites as promising electrode materials in the context of supercapacitor applications.

为卓越的电化学储能应用开发低成本、高导电性和多孔电极材料确实是一项具有挑战性的任务，尤其是在无任何杂质的大规模生产方面。本研究的重点是合成一种介孔纳米复合材料，该材料由高导电性氮化石墨碳（g-CN）和氮化铝（AlN）纳米颗粒组成，称为 AlN/g-CN，旨在提高超级电容器的性能。AlN/g-CN 纳米复合材料是利用氮气（N2）和氨气（NH3）气体环境，从 AlN 纳米颗粒开始，通过热等离子弧放电工艺合成的。同时，以三聚氰胺为原料，采用直接热解方法合成了 g-CN 成分。随后，通过简便的超声处理过程形成了高度介孔的 AlN/g-CN 纳米复合材料。研究了所制备样品的相位、晶体结构、形貌、元素组成和化学状态分析。评估了所制备样品（包括 AlN、g-CN 和 AlN/g-CN 电极）的电化学性能，以确定其在电化学电容器应用中的适用性。值得注意的是，AlN/g-CN 纳米复合材料表现出显著的电化学伪电容行为，在电流密度为 1 A/g 时，比电容高达 434.1 F/g。此外，AlN/g-CN 电极还表现出出色的循环稳定性，在 10 A/g 的电流密度下，经过 5000 次充放电循环后，其初始电容仍能保持 93.2%。在功率密度为 269.7 W/kg 时，最大能量密度达到 6.52 Wh/kg。这些发现强调了介孔 AlN/g-CN 纳米复合材料在超级电容器应用中作为电极材料的潜力。

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引用次数: 0

Effects of Interfacial Nanoengineering through an Artificial Oxidation of Epitaxial Pd/Co Ultrathin Films on Perpendicular Magnetic Anisotropy and the Dzyaloshinskii–Moriya Interaction 通过外延钯/钴超薄薄膜的人工氧化实现界面纳米工程对垂直磁各向异性和 Dzyaloshinskii-Moriya 相互作用的影响

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials

Pub Date : 2024-06-20 DOI: 10.1021/acsaelm.4c00466

Aleksei G. Kozlov, Aleksandr V. Davydenko, Leonid L. Afremov, Ilia G. Iliushin, Vladimir N. Kharitonov, Pavel S. Mushtuk, Egor V. Tarasov, Aleksandr A. Turpak, Aleksandr F. Shishelov, Nikolay N. Chernousov, Mikhail E. Letushev, Alexandr V. Sadovnikov, Anna B. Khutieva, Alexey V. Ognev, Alexander S. Samardak

Transition metal oxides are promising for future electronics because of their unique magnetoionic properties and spin–charge interconversion. Here, epitaxial Pd/Co films with an artificially oxidized magnetic layer are studied. The effect of the oxidation dose of the Co layer on the structural and magnetic properties is investigated. The opportunity of epitaxial growth of Pd layers on top of the partially disordered oxide layer with preservation of the epitaxial ratio is shown. The calculations show that the process of oxide formation occurs according to the layer-by-island growth mechanism. An increase in the anisotropy field from the residual thickness of cobalt with an increase in the oxidation dose is observed. The enhancement of the Dzyaloshinskii–Moriya interaction at the interface between the ferromagnet and the oxide layer is experimentally confirmed by analyzing the velocity curves of the asymmetric displacement of domain walls in crossed magnetic fields in the creep mode and is supported by Brillouin light scattering spectroscopy. We demonstrate that the most significant contribution to the interfacial Dzyaloshinskii–Moriya interaction in Pd/Co/CoO films is made by the Co oxide layer. Our findings can be used to develop memory and logic devices of oxide spintronics having advantages of effective control of magnetization state, nonvolatility, low power consumption, and fast data processing.

过渡金属氧化物具有独特的磁性和自旋电荷相互转换特性，因此在未来的电子学领域大有可为。本文研究了具有人工氧化磁性层的钯/钴外延薄膜。研究了 Co 层的氧化剂量对结构和磁性能的影响。结果表明，在部分无序氧化层顶部外延生长钯层时，外延比率得以保持。计算结果表明，氧化物的形成过程是按照逐层岛屿生长机制进行的。随着氧化剂量的增加，钴的残余厚度所产生的各向异性场也随之增加。通过分析蠕变模式下交叉磁场中畴壁不对称位移的速度曲线，实验证实了铁磁体与氧化层之间界面上 Dzyaloshinskii-Moriya 相互作用的增强，布里渊光散射光谱也证实了这一点。我们证明，在 Pd/Co/CoO 薄膜中，对界面 Dzyaloshinskii-Moriya 相互作用贡献最大的是 Co 氧化层。我们的发现可用于开发氧化物自旋电子学的存储器和逻辑器件，这些器件具有有效控制磁化状态、不挥发性、低功耗和快速数据处理等优点。

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引用次数: 0

Nitrogen-Doped Graphene-Ti3C2Tx Quasi-3D Heterostructures Interfacial Interaction for High-Temperature Vibrational Piezoelectric Energy Harvesting Application 氮掺杂石墨烯-Ti3C2Tx 准三维异质结构在高温振动压电能量收集应用中的界面相互作用

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials

Pub Date : 2024-06-20 DOI: 10.1021/acsaelm.4c00509

Lijie Kou, Rad Sadri, Shaheed Auwal, Manpreet Kaur, Nai Shyan Lai, Edward P. L. Roberts, Muhammad Aniq Shazni Mohammad Haniff, Masuri Othman, Chang Fu Dee, Poh Choon Ooi

Piezoelectric nanogenerators (PENG) can face challenges when integrated into high-temperature applications because of their high-temperature sensitivity. Heterostructures of specific 2D nanomaterials can potentially enhance the PENG performance for practical applications at high temperatures. Hence, this study incorporates nitrogen-doped graphene (NGr) and Ti₃C₂T_x MXene heterostructure nanofillers into the polyvinylidene difluoride (PVDF) matrix for energy harvesting in a high-temperature vibration environment. The reproducible and stable all-solution fabrication is achieved by optimizing the appropriate ratio of the NGr-Ti₃C₂T_x ratio. At room temperature, the nanogenerator showed an optimum output voltage of ∼9.0 V and ∼1.5 μA of current. Thereby, it increased to 24.0 V and 1.75 μA when the temperature increased to 90 °C, obtaining a power density of 3.85 μW/cm². This outstanding performance is attributed to the designed NGr-Ti₃C₂T_x quasi-3D heterostructure, where its rich interfacial features, excellent electrical conductivity, and localized elastic complexes synergistically promote the piezoelectric output of the energy harvester. Placing the device on the road could be used to collect the mechanical energy generated by the vibration of the car’s movement and convert it into electrical energy, which opens up new development possibilities for addressing emerging energy issues.

压电纳米发电机（PENG）因其高温敏感性，在集成到高温应用中时可能会面临挑战。特定二维纳米材料的异质结构有可能提高压电纳米发电机在高温下的实际应用性能。因此，本研究将氮掺杂石墨烯（NGr）和 Ti3C2Tx MXene 异质结构纳米填料加入聚偏二氟乙烯（PVDF）基体中，用于高温振动环境下的能量收集。通过优化适当的 NGr-Ti3C2Tx 比例，实现了可重复和稳定的全溶液制造。室温下，纳米发电机的最佳输出电压为 9.0 V，电流为 1.5 μA。当温度升至 90 ℃ 时，输出电压增至 24.0 V，电流增至 1.75 μA，功率密度达到 3.85 μW/cm2。这种出色的性能归功于所设计的 NGr-Ti3C2Tx 准三维异质结构，其丰富的界面特征、优异的导电性和局部弹性复合物协同促进了能量收集器的压电输出。将该装置放置在道路上，可用于收集汽车运动振动产生的机械能并将其转化为电能，这为解决新兴能源问题提供了新的发展可能性。

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引用次数: 0

Moisture Diffusion in PECVD a-SiOxNy:H and a-SiOx:H Coated on Polymer Resins: A Neutron Reflectometry Study PECVD a-SiOxNy:H 和 a-SiOx:H 涂层聚合物树脂中的水分扩散：中子反射仪研究

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials

Pub Date : 2024-06-20 DOI: 10.1021/acsaelm.4c00239

Fabien Chevreux, Manon Letiche, Alexey Vorobiev, Max Wolff, Laurent-Luc Chapelon

The uptake of water of as-deposited thin films of SiO_xN_y and SiO_x hard coatings on epoxy polymer resin by PECVD is studied by X-ray photoelectron spectroscopy (XPS) and ToF-SIMS. The absence of a chemical composition gradient at the dielectric-resin interface suggests a rough interface between the two materials. Upon storage in a cleanroom environment for 6 months (19 °C/40% RH), the uptake of water of the polymer resin layer was observed by XPS. Additionally, ToF-SIMS depth profiling revealed significant changes in the water content at the SiO_xN_y-resin interface. We attribute these changes to the absorption of water diffusing through the dielectric-resin. Neutron reflectometry performed under a dry and D₂O atmosphere confirms that D₂O was nonreversibly absorbed in the SiO_xN_y-resin, but only limited moisture diffusion was observed in the SiO_x-resin.

通过 X 射线光电子能谱 (XPS) 和 ToF-SIMS 研究了通过 PECVD 在环氧聚合物树脂上沉积 SiOxNy 和 SiOx 硬涂层薄膜的吸水率。电介质-树脂界面上没有化学成分梯度，这表明两种材料之间的界面比较粗糙。在洁净室环境中存放 6 个月（19 °C/40%相对湿度）后，XPS 观察到聚合物树脂层吸水。此外，ToF-SIMS 深度剖面分析表明，SiOxNy-树脂界面的含水量发生了显著变化。我们将这些变化归因于通过介电树脂扩散的水的吸收。在干燥和 D2O 气氛下进行的中子反射测量证实，SiOxNy-树脂不可逆地吸收了 D2O，但在 SiOx-树脂中只观察到有限的水分扩散。

引用次数: 0

Signal as an Energy Source: Dual-Functional Potentiometric Sensor Serves as an Energy Harvester 信号即能源：充当能量收集器的双功能电位计传感器

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials

Pub Date : 2024-06-18 DOI: 10.1021/acsaelm.4c00064

Ajanta Saha, Muhammad A. Alam

Wearable, implantable, and environmental (WIE) “edge” sensors, being deployed for a broad range of applications including smart healthcare and agriculture, are typically powered by various active (e.g., triboelectric generator, solar cell, etc.) and passive (e.g., drone-supported RFID) energy harvesters. Unfortunately, these active and passive harvesters rely on intermittent sources of energy, and additional circuitry needed to integrate the harvester with the sensor increases design cost and complexity. Interestingly, this problem can be resolved if the sensor can power itself by time-multiplexed harvesting of the energy contained in the signal/noise. These “dual-function” sensors have been previously used in self-powered microphones, cameras, biofuel cells, etc. Since a potentiometric ion-selective electrode (ISE) measures analyte concentration in the form of a voltage signal, in principle, the voltage can be used to self-power the ISE system, including the signal readout and processing circuitry. The principle has already been demonstrated for the self-powered reading of the voltage signal; however, a long-term analysis of the viability and reliability of ISE sensing and harvesting is needed for integration into continuous monitoring edge devices. In this paper, we develop an equivalent circuit model of ISE from electrochemical impedance analysis to quantify its key reliability issues such as voltage stability, sensitivity, and power harvesting capacity by repetitive charging and discharging of a capacitor. The circuit model is verified by a systematic set of laboratory experiments. We show that an unoptimized pH sensor can harvest 0.12 nW/cm² while simultaneously measuring the analyte activity for days; the experimental evidence indicates that the sensing and harvesting can continue indefinitely. Using the circuit model as an optimization tool, we experimentally show that power yield can be increased approximately 500 times to 50 nW/cm² by replacing the pH sensor with bare Pt wire, demonstrating the potential of such harvesters.

可穿戴、可植入和环境（WIE）"边缘 "传感器被广泛应用于智能医疗和农业等领域，通常由各种有源（如三电发电机、太阳能电池等）和无源（如无人机支持的 RFID）能量收集器供电。遗憾的是，这些有源和无源能量收集器依赖于间歇性的能量来源，而且将能量收集器与传感器集成所需的额外电路增加了设计成本和复杂性。有趣的是，如果传感器能够通过时间多路复用采集信号/噪声中所含的能量来为自身供电，那么这个问题就能迎刃而解。这种 "双功能 "传感器以前曾用于自供电麦克风、照相机、生物燃料电池等。由于电位离子选择电极（ISE）以电压信号的形式测量被分析物的浓度，因此原则上，电压可用于自供电 ISE 系统，包括信号读出和处理电路。自供电读取电压信号的原理已经得到证实；但是，要将 ISE 传感和采集集成到连续监测边缘设备中，还需要对其可行性和可靠性进行长期分析。在本文中，我们通过电化学阻抗分析建立了 ISE 的等效电路模型，以量化其关键可靠性问题，如电压稳定性、灵敏度和通过电容器重复充放电的功率收集能力。该电路模型通过一套系统的实验室实验进行了验证。我们发现，一个未经优化的 pH 传感器在同时测量分析物活性的情况下，可收集 0.12 nW/cm2 的电能达数天之久；实验证据表明，传感和收集电能可无限期地持续下去。利用电路模型作为优化工具，我们的实验表明，用裸铂丝代替 pH 传感器，功率输出可提高约 500 倍，达到 50 nW/cm2，这证明了这种采集器的潜力。

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引用次数: 0

Thermal Confinement by Monolayer MoS2 for Reduced RESET Current in Phase Change Memory Pillar Cells 单层 MoS2 的热约束可降低相变存储器柱状电池的 RESET 电流

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials

Pub Date : 2024-06-18 DOI: 10.1021/acsaelm.4c00721

Sadid Muneer, Muhammad Aminul Haque Chowdhury, Md. Kabiruzzaman, Shafat Shahnewaz, Nafisa Noor, Mainul Hossain

Phase change memory (PCM) is one of the most promising nonvolatile memory technologies for high-density, high-endurance, fast-switching, and multilevel data storage. However, the high RESET current requirement remains a critical bottleneck in the development of PCM technology. In this work, we propose a pillar-shaped PCM device that consists of a Ge₂Sb₂Te₅ (GST) layer sandwiched between the top and the bottom TiN electrodes. An atomically thin layer of MoS₂ is grown on top of the oxidized bottom TiN layer. A filament formed through the TiO₂ and MoS₂ layers enables electrical conduction, while the high thermal resistivity of MoS₂ ensures excellent thermal confinement within the GST layer. Finite element simulations show a 91% reduction in RESET current brought about by the filament, while the use of MoS₂ yields a further ∼30% decrease in the switching power. The results presented here demonstrate the potential use of two-dimensional (2D) materials with conventional PCM cells to reduce switching power.

相变存储器（PCM）是最有前途的非易失性存储器技术之一，可用于高密度、高耐久性、快速开关和多级数据存储。然而，高 RESET 电流要求仍然是 PCM 技术发展的关键瓶颈。在这项工作中，我们提出了一种柱形 PCM 器件，它由夹在顶部和底部 TiN 电极之间的 Ge2Sb2Te5（GST）层组成。在氧化的底部 TiN 层上生长了一层原子级薄的 MoS2。通过 TiO2 层和 MoS2 层形成的丝状结构实现了导电，而 MoS2 的高热阻则确保了 GST 层内出色的热约束。有限元模拟显示，丝状结构使 RESET 电流降低了 91%，而 MoS2 的使用则使开关功率进一步降低了 30%。本文介绍的结果表明，二维（2D）材料与传统 PCM 电池的结合使用具有降低开关功率的潜力。

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引用次数: 0

Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor 石墨烯-P(VDF-TrFE)铁电场效应晶体管中的红外光可重写光电存储器

IF 4.3 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials

Pub Date : 2024-06-14 DOI: 10.1021/acsaelm.4c00418

Yinhui Chen, Yuping Jia*, Yang Chen, Zhiming Shi, Shunpeng Lv, Ke Jiang, Mingrui Liu, Tong Wu, Dabing Li and Xiaojuan Sun*,

The ferroelectric field-effect transistor (FeFET), which has nonvolatility, is a key basic element of a logic circuit. In recent years, there has been a growing interest in applying FeFET memory devices in the field of optoelectronics to achieve integrated devices with photon sensing and storage functionalities. However, in the limited development of these compact and versatile optoelectronic memories, the design of an optical absorption layer is still elusive. Wavelength selective optoelectronic memories cannot be realized only using a simple FeFET structure with a 2D channel, especially in the infrared communication band. In this study, we propose a device based on a P(VDF-TrFE)/graphene/SiO₂/p-Si structure, in which the graphene/SiO₂/p-Si architecture has strong infrared absorption capacity due to the interfacial gating effect. The photogenerated carriers can modulate the carrier density in graphene, thereby controlling the polarization effect of P(VDF-TrFE) and achieving nonvolatile storage of optical information. We successfully exhibited six resistive states of optical and electrical signal storage using this device. The programming of the optical and electrical signals can be achieved in this single device simultaneously. This dual-mode multistate storage device that combines light and electricity may become a key component in high-capacity and nonvolatile optical communication hardware.

铁电场效应晶体管（FeFET）具有非波动性，是逻辑电路的关键基本元件。近年来，人们越来越关注将铁电场效应晶体管存储器件应用于光电子领域，以实现具有光子传感和存储功能的集成器件。然而，在这些结构紧凑、用途广泛的光电存储器的有限开发过程中，光吸收层的设计仍是一个难题。仅使用具有二维沟道的简单 FeFET 结构无法实现波长选择性光电存储器，尤其是在红外通信波段。在本研究中，我们提出了一种基于 P(VDF-TrFE)/石墨烯/二氧化硅/对硅结构的器件，其中石墨烯/二氧化硅/对硅结构由于界面门控效应而具有很强的红外吸收能力。光生载流子可以调节石墨烯中的载流子密度，从而控制 P(VDF-TrFE) 的极化效应，实现光信息的非易失性存储。我们利用该器件成功展示了六种光电信号存储的电阻状态。光信号和电信号的编程可在这一单一器件中同时实现。这种光电结合的双模多态存储设备可能成为大容量和非易失性光通信硬件的关键部件。

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引用次数: 0

Unveiling the Impact of Interfaces and Impurities on Photogenerated Charge Trapping in Phototransistors with Diverse Organic Semiconductor Active-Layer Architectures 揭示具有不同有机半导体有源层结构的光电晶体管中的界面和杂质对光生电荷捕获的影响

IF 4.3 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

ACS Applied Electronic Materials

Pub Date : 2024-06-14 DOI: 10.1021/acsaelm.4c00486

Gergely Tarsoly, Dongyub Kwon and Seungmoon Pyo*,

The fabrication of efficient phototransistors relies on understanding the trapping of photogenerated charge carriers in localized electronic states (known as trap sites) which creates an additional electric field in the active layer. These sites are mostly located at interfaces and impurities within the active layer and play a crucial role in controlling the device performance. Hence, they are crucial considerations in the design of high-responsivity phototransistors. This paper reports on the impact of active-layer interfaces and impurities on the photoresponse behavior of phototransistors based on PTCDI-C₅ (n-type) and C₈-BTBT (p-type) organic semiconductor layers. Trap sites are introduced into various active layers via vacuum evaporation, solution processing, and hybrid processes. The mechanism of charge trapping is elucidated using ultraviolet photoelectron spectroscopy, providing insights into the electron band energy structure at the interfaces. The findings reveal that both interfaces and impurities can significantly affect the photoresponse behavior of the devices. Impurities are found to consistently enhance the photoresponse, whereas interfaces can induce either positive or negative photoresponses, depending on their spatial orientation and bias polarity. This study establishes an important link between the active-layer structure and the photoresponse of devices and provides valuable insights for the design and optimization of high-performance phototransistors.

高效光电晶体管的制造有赖于了解光生电荷载流子在局部电子态（称为阱点）中的捕获情况，这将在有源层中产生额外的电场。这些阱点大多位于有源层的界面和杂质处，在控制器件性能方面起着至关重要的作用。因此，它们是设计高响应光电晶体管的重要考虑因素。本文报告了活性层界面和杂质对基于 PTCDI-C5 （n 型）和 C8-BTBT （p 型）有机半导体层的光电晶体管的光响应行为的影响。通过真空蒸发、溶液处理和混合工艺在各种活性层中引入了捕获点。利用紫外光电子能谱阐明了电荷捕获机制，从而深入了解了界面上的电子能带结构。研究结果表明，界面和杂质都会显著影响器件的光响应行为。研究发现，杂质会持续增强光响应，而界面则会引起正或负的光响应，这取决于它们的空间取向和偏置极性。这项研究建立了有源层结构与器件光响应之间的重要联系，为设计和优化高性能光电晶体管提供了宝贵的见解。

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