Zaoyang Lin*, Xiangyu Wu, Daire Cott, Yuanyuan Shi, Henry Medina Silva, Stefanie Sergeant, Thierry Conard, Johan Meersschaut, Ankit Nalin Mehta, Benjamin Groven, Pierre Morin, Inge Asselberghs, Cesar Javier Lockhart de la Rosa, Gouri Sankar Kar, Dennis Lin* and Annelies Delabie*,
Atomic layer deposition (ALD) of gate dielectrics on two-dimensional transition-metal dichalcogenides (2D TMDs) is challenging due to their chemically inert surfaces. Although various surface pretreatments can form nucleation sites to facilitate the precursor adsorption, preserving 2D TMDs during the pretreatments and maintaining gate stack quality with the weak 2D TMD/dielectric interface become the main concerns. In this work, we combine physisorbed-precursor-assisted (PPA)-ALD to minimize damage to 2D TMDs with a second interfacial layer for performance enhancement. Ultrathin GdAlO3 interlayers are integrated into 2D TMD gate stacks with PPA-ALD AlOx seeding layers and HfO2 top dielectrics. Further, 1-nm-thick and pinhole-free GdAlO3 can be deposited on AlOx-seeded monolayer (1L) WS2 by ALD at 250 °C. The material properties of 1L WS2 are preserved, as confirmed by Raman spectroscopy. After the GdAlO3 layer insertion, 1L MoS2 dual-gate (DG) field-effect transistors (FETs) show improved subthreshold swing (SS), field-effect mobility, and Id–Vg hysteresis without compromising the capacitance-equivalent thickness (CET). The proposed strategy is wafer-scale compatible and extendable to the future nanosheet gate-all-around structures.
{"title":"Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides","authors":"Zaoyang Lin*, Xiangyu Wu, Daire Cott, Yuanyuan Shi, Henry Medina Silva, Stefanie Sergeant, Thierry Conard, Johan Meersschaut, Ankit Nalin Mehta, Benjamin Groven, Pierre Morin, Inge Asselberghs, Cesar Javier Lockhart de la Rosa, Gouri Sankar Kar, Dennis Lin* and Annelies Delabie*, ","doi":"10.1021/acsaelm.4c00309","DOIUrl":"10.1021/acsaelm.4c00309","url":null,"abstract":"<p >Atomic layer deposition (ALD) of gate dielectrics on two-dimensional transition-metal dichalcogenides (2D TMDs) is challenging due to their chemically inert surfaces. Although various surface pretreatments can form nucleation sites to facilitate the precursor adsorption, preserving 2D TMDs during the pretreatments and maintaining gate stack quality with the weak 2D TMD/dielectric interface become the main concerns. In this work, we combine physisorbed-precursor-assisted (PPA)-ALD to minimize damage to 2D TMDs with a second interfacial layer for performance enhancement. Ultrathin GdAlO<sub>3</sub> interlayers are integrated into 2D TMD gate stacks with PPA-ALD AlO<sub><i>x</i></sub> seeding layers and HfO<sub>2</sub> top dielectrics. Further, 1-nm-thick and pinhole-free GdAlO<sub>3</sub> can be deposited on AlO<sub><i>x</i></sub>-seeded monolayer (1L) WS<sub>2</sub> by ALD at 250 °C. The material properties of 1L WS<sub>2</sub> are preserved, as confirmed by Raman spectroscopy. After the GdAlO<sub>3</sub> layer insertion, 1L MoS<sub>2</sub> dual-gate (DG) field-effect transistors (FETs) show improved subthreshold swing (SS), field-effect mobility, and <i>I</i><sub>d</sub>–<i>V</i><sub>g</sub> hysteresis without compromising the capacitance-equivalent thickness (CET). The proposed strategy is wafer-scale compatible and extendable to the future nanosheet gate-all-around structures.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141104653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jonas Hilário, Berlinda Marcos Macucule, Peng Wang*, Wei Yu and Chuizhou Meng*,
The need for wearable electronics has remarkably increased due to the fast development of flexible tactile sensors with the unique capability of responding to external pressure stimuli while maintaining a high degree of deformability. To meet the practical wearable sensing requirement, outstanding sensitivity and a wide detection range are always highly desired. Herein, we report the design and fabrication of a flexible iontronic tactile sensor based on a stretchable silver nanowire (AgNW)/Ecoflex composite film with a sandpaper-roughened surface as the electron-conductive electrode and a porous polyurethane (PU)/poly(vinylidene fluoride) hexafluoropropylene copolymer (PVDF)/1-butyl-3-methylimidazolium tetrafluoroborate ([BMIm][BF4]) composite foam as the ion-conductive electrolyte through a facile dip-coating method. Because of the supercapacitive sensing mechanism and the surface and internal microstructures, an ultrahigh sensitivity of 422.22 kPa–1 and a maximum wide detection range of 80 kPa are simultaneously achieved after thorough compositional and structural optimization. Toward practical wearable sensing applications, the developed iontronic tactile sensor is demonstrated to be capable of detecting various subtle and large pressures caused by different parts of the human body, such as wrist pulse, swallowing, speaking, and bending of the finger, wrist, and elbow. The proposed material and structure strategy would provide a concept and methodology for the development of sensors with excellent performance.
{"title":"Flexible Iontronic Tactile Sensors Based on Silver Nanowire Electrode with Sandpaper-Roughened Surface and Ionic Liquid Gel Electrolyte with Porous Foam Structure for Wearable Sensing Applications","authors":"Jonas Hilário, Berlinda Marcos Macucule, Peng Wang*, Wei Yu and Chuizhou Meng*, ","doi":"10.1021/acsaelm.4c00522","DOIUrl":"10.1021/acsaelm.4c00522","url":null,"abstract":"<p >The need for wearable electronics has remarkably increased due to the fast development of flexible tactile sensors with the unique capability of responding to external pressure stimuli while maintaining a high degree of deformability. To meet the practical wearable sensing requirement, outstanding sensitivity and a wide detection range are always highly desired. Herein, we report the design and fabrication of a flexible iontronic tactile sensor based on a stretchable silver nanowire (AgNW)/Ecoflex composite film with a sandpaper-roughened surface as the electron-conductive electrode and a porous polyurethane (PU)/poly(vinylidene fluoride) hexafluoropropylene copolymer (PVDF)/1-butyl-3-methylimidazolium tetrafluoroborate ([BMIm][BF<sub>4</sub>]) composite foam as the ion-conductive electrolyte through a facile dip-coating method. Because of the supercapacitive sensing mechanism and the surface and internal microstructures, an ultrahigh sensitivity of 422.22 kPa<sup>–1</sup> and a maximum wide detection range of 80 kPa are simultaneously achieved after thorough compositional and structural optimization. Toward practical wearable sensing applications, the developed iontronic tactile sensor is demonstrated to be capable of detecting various subtle and large pressures caused by different parts of the human body, such as wrist pulse, swallowing, speaking, and bending of the finger, wrist, and elbow. The proposed material and structure strategy would provide a concept and methodology for the development of sensors with excellent performance.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141106534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zeyi Wu, Mengyao Su, Xiangyu Song, Denghua Li, Xinyuan Li, Jiajia Liu* and Jiatao Zhang*,
Surface termination and defects of metal oxide semiconductors are crucial in the process of gas adsorption–desorption and signal transduction, thereby determining their sensing performance. Herein, a facile solvent-assisted surface engineering strategy was demonstrated to synthesize anatase TiO2 nanosheets (TNS) for an ultraviolet (UV) light-activated isopropanol (IPA) gas sensor. Surface-fluorinated TiO2 nanosheets (F-TNS) were first synthesized by the hydrofluoric acid-assisted hydrothermal method and followed by hydrothermally treating in Na2S solutions with different concentrations. The effect of the progressive removal of fluorides was discussed in detail based on X-ray photoelectron spectroscopy (XPS), diffuse reflectance spectroscopy (DRS), electrochemical impedance spectroscopy (EIS), and in situ Fourier transform infrared (FTIR) spectroscopy analyses. Compared with F-TNS, the chemiresistive sensor based on the TNS with a trace amount of fluorine exhibited a 324% increase in the sensitivity to 50 ppm of isopropanol at 50 °C under UV irradiation (λ = 365 nm, 30 mW/cm2), while it exhibited a 45% decrease in the recovery time. The enhanced isopropanol sensing performance could be attributed to the high surface area, rational surface terminations, oxygen vacancies, and UV photoexcited charge carriers, which further modulate the surface reaction and charge transfer. These findings offer a facile strategy for the rational design of oxide-based sensing materials, which help in understanding the function of surface terminations and defects in gas sensing.
{"title":"Facile Surface Engineering of TiO2 Nanosheets for Enhanced Isopropanol Sensing under UV Irradiation","authors":"Zeyi Wu, Mengyao Su, Xiangyu Song, Denghua Li, Xinyuan Li, Jiajia Liu* and Jiatao Zhang*, ","doi":"10.1021/acsaelm.4c00444","DOIUrl":"10.1021/acsaelm.4c00444","url":null,"abstract":"<p >Surface termination and defects of metal oxide semiconductors are crucial in the process of gas adsorption–desorption and signal transduction, thereby determining their sensing performance. Herein, a facile solvent-assisted surface engineering strategy was demonstrated to synthesize anatase TiO<sub>2</sub> nanosheets (TNS) for an ultraviolet (UV) light-activated isopropanol (IPA) gas sensor. Surface-fluorinated TiO<sub>2</sub> nanosheets (F-TNS) were first synthesized by the hydrofluoric acid-assisted hydrothermal method and followed by hydrothermally treating in Na<sub>2</sub>S solutions with different concentrations. The effect of the progressive removal of fluorides was discussed in detail based on X-ray photoelectron spectroscopy (XPS), diffuse reflectance spectroscopy (DRS), electrochemical impedance spectroscopy (EIS), and in situ Fourier transform infrared (FTIR) spectroscopy analyses. Compared with F-TNS, the chemiresistive sensor based on the TNS with a trace amount of fluorine exhibited a 324% increase in the sensitivity to 50 ppm of isopropanol at 50 °C under UV irradiation (λ = 365 nm, 30 mW/cm<sup>2</sup>), while it exhibited a 45% decrease in the recovery time. The enhanced isopropanol sensing performance could be attributed to the high surface area, rational surface terminations, oxygen vacancies, and UV photoexcited charge carriers, which further modulate the surface reaction and charge transfer. These findings offer a facile strategy for the rational design of oxide-based sensing materials, which help in understanding the function of surface terminations and defects in gas sensing.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141103966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaozhe Cheng, Zhitao Qin, Hongen Guo, Zhitao Dou, Hong Lian*, Jianfeng Fan, Yongquan Qu and Qingchen Dong*,
Mimicking the human brain to achieve neuromorphic computing holds promise in the field of artificial intelligence (AI). Optoelectronic synapses are regarded as the crucial foundation stone in neuromorphic computing due to their capability to intelligently process optoelectronic input signals. Herein, two donor–acceptor (D–A)-type metallopolymers, P-Cu and P-Zn, containing porphyrin moieties are designed and synthesized, which are utilized as a resistive switching layer for preparation of memristors. The resulting memristors exhibit significantly enhanced electrical characteristics, displaying a high ON/OFF ratio, a low threshold voltage (Vth), and superior cycle-to-cycle reproducibility. This enhancement is attributed to the formation and dissociation of charge transfer (CT) states induced by inserted metal ions. Importantly, the P-Cu-based memristor demonstrates the capability to co-modulate optoelectronic signals, effectively emulating versatile synaptic functions of the nervous system. These functions include excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), short-term plasticity (STP), long-term plasticity (LTP), transition from short-term memory (STM) to long-term memory (LTM), and learning-experience behavior. Moreover, multiple Boolean logical functions were successfully implemented using the paired stimuli of electrical pulses. The neuromorphic computing function was also proven through pattern recognition, achieving a recognition rate of up to 86.08% for handwritten digits. This study offers a potent approach for developing multifunctional artificial synaptic devices and artificial neural network platforms and opens up the innovative application of metallopolymers in the fields of optoelectronics and AI.
{"title":"Metallopolymeric Memristor Based Artificial Optoelectronic Synapse for Neuromorphic Computing","authors":"Xiaozhe Cheng, Zhitao Qin, Hongen Guo, Zhitao Dou, Hong Lian*, Jianfeng Fan, Yongquan Qu and Qingchen Dong*, ","doi":"10.1021/acsaelm.4c00427","DOIUrl":"10.1021/acsaelm.4c00427","url":null,"abstract":"<p >Mimicking the human brain to achieve neuromorphic computing holds promise in the field of artificial intelligence (AI). Optoelectronic synapses are regarded as the crucial foundation stone in neuromorphic computing due to their capability to intelligently process optoelectronic input signals. Herein, two donor–acceptor (D–A)-type metallopolymers, <b>P-Cu</b> and <b>P-Zn</b>, containing porphyrin moieties are designed and synthesized, which are utilized as a resistive switching layer for preparation of memristors. The resulting memristors exhibit significantly enhanced electrical characteristics, displaying a high ON/OFF ratio, a low threshold voltage (<i>V</i><sub>th</sub>), and superior cycle-to-cycle reproducibility. This enhancement is attributed to the formation and dissociation of charge transfer (CT) states induced by inserted metal ions. Importantly, the <b>P-Cu</b>-based memristor demonstrates the capability to co-modulate optoelectronic signals, effectively emulating versatile synaptic functions of the nervous system. These functions include excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), short-term plasticity (STP), long-term plasticity (LTP), transition from short-term memory (STM) to long-term memory (LTM), and learning-experience behavior. Moreover, multiple Boolean logical functions were successfully implemented using the paired stimuli of electrical pulses. The neuromorphic computing function was also proven through pattern recognition, achieving a recognition rate of up to 86.08% for handwritten digits. This study offers a potent approach for developing multifunctional artificial synaptic devices and artificial neural network platforms and opens up the innovative application of metallopolymers in the fields of optoelectronics and AI.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141112515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mengna Ren, Dedong Guo, Qingzhou Wang, Shuheng Dong, Xueqian Liu, Jingjing Guo, Xuqi Zheng, Lei Qin, Qihui Zhou*, Zhao Yao*, Yang Li* and Yuanyue Li*,
The utilization of sensors has become indispensable in the advent of an intelligent era characterized by artificial intelligence, 5G communication, big data, and other cutting-edge technologies. Traditional sensors require external power sources or batteries, resulting in a complex sensing system that does not promote the development of sustainable and environmentally friendly applications for health monitoring. In recent years, the electrical output and stability of piezoelectric, triboelectric, thermoelectric, and hybrid nanogenerators have been significantly improved, enabling their widespread role in the development of self-powered sensors. The sensors are capable of performing sensing tasks by converting their own energy, thereby obviating the need for an external power supply. In this paper, we initially explore the operating mechanisms, device materials, and structures of diverse nanogenerators and evaluate their output efficacy. Subsequently, we showcase the latest advancements in self-powered sensor systems, spanning various fields such as biomedical and healthcare, wearable devices, sound monitoring, smart vehicles, environmental monitoring, and smart cities. The paper also explores the future potential of self-powered sensor systems, in addition to discussing their practical applications.
{"title":"Recent Advances in Self-powered Sensors Based on Nanogenerators: From Material and Structural Design to Cutting-Edge Sensing Applications","authors":"Mengna Ren, Dedong Guo, Qingzhou Wang, Shuheng Dong, Xueqian Liu, Jingjing Guo, Xuqi Zheng, Lei Qin, Qihui Zhou*, Zhao Yao*, Yang Li* and Yuanyue Li*, ","doi":"10.1021/acsaelm.4c00157","DOIUrl":"10.1021/acsaelm.4c00157","url":null,"abstract":"<p >The utilization of sensors has become indispensable in the advent of an intelligent era characterized by artificial intelligence, 5G communication, big data, and other cutting-edge technologies. Traditional sensors require external power sources or batteries, resulting in a complex sensing system that does not promote the development of sustainable and environmentally friendly applications for health monitoring. In recent years, the electrical output and stability of piezoelectric, triboelectric, thermoelectric, and hybrid nanogenerators have been significantly improved, enabling their widespread role in the development of self-powered sensors. The sensors are capable of performing sensing tasks by converting their own energy, thereby obviating the need for an external power supply. In this paper, we initially explore the operating mechanisms, device materials, and structures of diverse nanogenerators and evaluate their output efficacy. Subsequently, we showcase the latest advancements in self-powered sensor systems, spanning various fields such as biomedical and healthcare, wearable devices, sound monitoring, smart vehicles, environmental monitoring, and smart cities. The paper also explores the future potential of self-powered sensor systems, in addition to discussing their practical applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141111064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present a high-response and fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at a 0 V bias for underwater photodetection through the photoelectrochemical (PEC) process. Compared to the UV PD without AlN insertion, the detection performance would be increased to 3–5 times for underwater solar-blind UV detection under the effect of heterostructure band engineering to prevent carrier drift and recombination at 0 V bias under 255 nm illumination. Furthermore, the photoresponsivity and response speed can be further improved by a surface modification strategy to adjust the carrier transport between the nitride semiconductor and electrolyte. These promising results lay a solid foundation for the development of III-nitride high-efficiency, self-powered PEC photosynthesis devices in the future.
实现可持续独立运行的高能效器件是下一代光电检测系统在各种环境中面临的巨大挑战。在这项研究中,我们提出了一种基于 p-AlGaN/AlN/n-GaN 纳米线(NWs)异质结的高响应、高速紫外光光电探测器(UV PD),它可以在 0 V 偏置下工作,通过光电化学(PEC)过程进行水下光电探测。在异质结构能带工程的作用下,与未插入 AlN 的紫外 PD 相比,在 255 纳米光照下的 0 V 偏压条件下,为防止载流子漂移和重组,水下日光盲紫外检测的检测性能将提高 3-5 倍。此外,通过表面改性策略调整氮化物半导体和电解质之间的载流子传输,还能进一步提高光致发光率和响应速度。这些充满希望的结果为未来开发 III 氮化物高效自供电 PEC 光合作用器件奠定了坚实的基础。
{"title":"Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires","authors":"Junjun Xue, Saisai Wang, Jiaming Tong, Guofeng Yang, Irina Parkhomenko, Fadei Komarov, Yu Liu, Qing Cai*, Jin Wang* and Ting Zhi*, ","doi":"10.1021/acsaelm.4c00636","DOIUrl":"10.1021/acsaelm.4c00636","url":null,"abstract":"<p >Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present a high-response and fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at a 0 V bias for underwater photodetection through the photoelectrochemical (PEC) process. Compared to the UV PD without AlN insertion, the detection performance would be increased to 3–5 times for underwater solar-blind UV detection under the effect of heterostructure band engineering to prevent carrier drift and recombination at 0 V bias under 255 nm illumination. Furthermore, the photoresponsivity and response speed can be further improved by a surface modification strategy to adjust the carrier transport between the nitride semiconductor and electrolyte. These promising results lay a solid foundation for the development of III-nitride high-efficiency, self-powered PEC photosynthesis devices in the future.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141108239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiapeng Tan, Peng Zhang, Kun Zhang, Xiaofei Bu, Gang Dou and Liangsong Huang*,
Flexible pressure sensors have great application prospects in the fields of human–computer interaction and wearable electronic devices. Nowadays, the emergence of planar capacitive pressure sensors composed of an interdigital electrode has solved the problem of mechanical mismatch between the electrode layer and the dielectric layer during packaging and further realizes the miniaturization and thinness. However, there are few reports on whether adjusting the height of the interdigital electrode can improve the sensitivity of the sensor. This paper proposes a strategy based on dispensing technology to improve the performance of a capacitive pressure sensor by adjusting the height of the interdigital electrode. The results show that the optimal height of the interdigital electrode is 1.3 mm. On this basis, increasing the number of fingers of the interdigital electrode can also expand the sensitivity and detection range of the sensor. In order to further improve the performance of the sensor, we doped barium titanate with a high dielectric constant in the dielectric layer and introduced the pyramid microstructure. The test results show that our sensor has high sensitivity (0.6275 kPa–1, ≤1 kPa), wide detection range (0.5–166 kPa), fast response time (120 ms), and good stability after 10,000 cycles. In addition, the sensor can be applied to various pressure detection scenarios such as finger pressing, human joint motion detection, and grasping object detection. Meanwhile, we also constructed a 3 × 3 pressure sensor array to identify the distribution of the spatial pressure. This work provides a solution for preparing high-performance capacitive pressure sensors using an interdigital electrode, which has great application prospects in the field of intelligent wearables.
{"title":"Fabrication of Flexible Capacitive Pressure Sensors by Adjusting the Height of the Interdigital Electrode","authors":"Jiapeng Tan, Peng Zhang, Kun Zhang, Xiaofei Bu, Gang Dou and Liangsong Huang*, ","doi":"10.1021/acsaelm.4c00586","DOIUrl":"10.1021/acsaelm.4c00586","url":null,"abstract":"<p >Flexible pressure sensors have great application prospects in the fields of human–computer interaction and wearable electronic devices. Nowadays, the emergence of planar capacitive pressure sensors composed of an interdigital electrode has solved the problem of mechanical mismatch between the electrode layer and the dielectric layer during packaging and further realizes the miniaturization and thinness. However, there are few reports on whether adjusting the height of the interdigital electrode can improve the sensitivity of the sensor. This paper proposes a strategy based on dispensing technology to improve the performance of a capacitive pressure sensor by adjusting the height of the interdigital electrode. The results show that the optimal height of the interdigital electrode is 1.3 mm. On this basis, increasing the number of fingers of the interdigital electrode can also expand the sensitivity and detection range of the sensor. In order to further improve the performance of the sensor, we doped barium titanate with a high dielectric constant in the dielectric layer and introduced the pyramid microstructure. The test results show that our sensor has high sensitivity (0.6275 kPa<sup>–1</sup>, ≤1 kPa), wide detection range (0.5–166 kPa), fast response time (120 ms), and good stability after 10,000 cycles. In addition, the sensor can be applied to various pressure detection scenarios such as finger pressing, human joint motion detection, and grasping object detection. Meanwhile, we also constructed a 3 × 3 pressure sensor array to identify the distribution of the spatial pressure. This work provides a solution for preparing high-performance capacitive pressure sensors using an interdigital electrode, which has great application prospects in the field of intelligent wearables.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141109793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Je-Sung Lee, Jung-Hong Min, Kyung-Pil Kim, Woo-Lim Jeong, Hoe-Min Kwak, Seung-Hyun Mun, Semi Oh, Jong-Ryeol Kim and Dong-Seon Lee*,
The fabrication of advanced graphene/metal-mesh hybrid transparent electrodes (TEs) suitable for ultraviolet (UV)-range optoelectronic applications is reported herein, employing UV–ozone treatment. The UV–ozone treatment of transferred graphene is adopted to simultaneously enable oxidation doping and taint removal from the graphene surface and obtain the supplementary benefit of optical transmittance enhancement. Furthermore, the changes in the physical and chemical properties of graphene under different UV–ozone-treated times were characterized using Raman, X-ray/UV photoelectron spectroscopy, Hall measurements, and the transmission line method. Subsequently, hybrid structures combining various UV–ozone-treated graphene samples with a metal-mesh were tested as TEs in gallium nitride-based 375 nm near-UV light-emitting diodes (LEDs). Results indicate a noteworthy enhancement in light output power: a 48.3% increase relative to an untreated LED and an 18.3% increase compared to a conventional indium tin oxide (ITO)-based LED, particularly after 300 s of UV–ozone treatment. The present study provides a practical approach to overcome the limitations of existing ITO TEs for UV applications, thereby facilitating the future commercialization of graphene-based optoelectronic devices.
本文报告了利用紫外-臭氧处理技术制造适用于紫外(UV)范围光电应用的先进石墨烯/金属网混合透明电极(TEs)的情况。采用紫外臭氧处理转移的石墨烯,可同时实现石墨烯表面的氧化掺杂和污点去除,并获得光学透射率增强的辅助优势。此外,还利用拉曼光谱、X 射线/紫外光电子能谱、霍尔测量和传输线法对不同紫外臭氧处理时间下石墨烯物理和化学特性的变化进行了表征。随后,测试了将各种紫外臭氧处理过的石墨烯样品与金属网相结合的混合结构作为氮化镓基 375 nm 近紫外发光二极管 (LED) 的 TE。结果表明,石墨烯的光输出功率显著提高:与未经处理的 LED 相比提高了 48.3%,与传统的基于铟锡氧化物 (ITO) 的 LED 相比提高了 18.3%,尤其是在经过 300 秒的紫外臭氧处理之后。本研究为克服现有 ITO TE 在紫外线应用方面的局限性提供了一种实用方法,从而促进了未来基于石墨烯的光电器件的商业化。
{"title":"Advanced Graphene/Metal-Mesh Hybrid Transparent Electrodes via Ultraviolet (UV)–Ozone Treatment for UV-Range Optoelectronic Devices","authors":"Je-Sung Lee, Jung-Hong Min, Kyung-Pil Kim, Woo-Lim Jeong, Hoe-Min Kwak, Seung-Hyun Mun, Semi Oh, Jong-Ryeol Kim and Dong-Seon Lee*, ","doi":"10.1021/acsaelm.4c00652","DOIUrl":"10.1021/acsaelm.4c00652","url":null,"abstract":"<p >The fabrication of advanced graphene/metal-mesh hybrid transparent electrodes (TEs) suitable for ultraviolet (UV)-range optoelectronic applications is reported herein, employing UV–ozone treatment. The UV–ozone treatment of transferred graphene is adopted to simultaneously enable oxidation doping and taint removal from the graphene surface and obtain the supplementary benefit of optical transmittance enhancement. Furthermore, the changes in the physical and chemical properties of graphene under different UV–ozone-treated times were characterized using Raman, X-ray/UV photoelectron spectroscopy, Hall measurements, and the transmission line method. Subsequently, hybrid structures combining various UV–ozone-treated graphene samples with a metal-mesh were tested as TEs in gallium nitride-based 375 nm near-UV light-emitting diodes (LEDs). Results indicate a noteworthy enhancement in light output power: a 48.3% increase relative to an untreated LED and an 18.3% increase compared to a conventional indium tin oxide (ITO)-based LED, particularly after 300 s of UV–ozone treatment. The present study provides a practical approach to overcome the limitations of existing ITO TEs for UV applications, thereby facilitating the future commercialization of graphene-based optoelectronic devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141113374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The circularly polarized state of light can carry encoding information through polarization modulation and structural information from the emitter or propagation medium. Therefore, the detection of the polarization state of light is a central function in various applications. One of the concise strategies is to transform left- and right-handed circularly polarized light (CPL) directly into distinguishable electronic signals using chiral structured materials. In this study, chiral films of β-In2S3 vertical nanosheet arrays are successfully grown using a facile solvothermal route. Chirality originates from the distortion of nanosheets with left or right-handedness controlled by the introduction of l-/d-cysteine as chiral inducers. Circularly polarized photodetectors based on chiral β-In2S3 films are fabricated. They exhibit good performances with a responsivity (R) of 8.0 A/W, photodetectivity (D*) of 5.0 × 1012 Jones, the photocurrent dissymmetry factor (gIph) of 0.34, and external quantum efficiency (EQE) of 2.2 × 103 (%) for a CPL of 450 nm.
{"title":"Solvothermal Growth of Chiral β-In2S3 Nanosheet Arrays for Circularly Polarized Photodetection","authors":"Zhou Sheng, Gaoyu Chen, Xueyan Hu, Yue Chen, Dongdong Xu, Caojin Yuan* and Xiangxing Xu*, ","doi":"10.1021/acsaelm.4c00241","DOIUrl":"10.1021/acsaelm.4c00241","url":null,"abstract":"<p >The circularly polarized state of light can carry encoding information through polarization modulation and structural information from the emitter or propagation medium. Therefore, the detection of the polarization state of light is a central function in various applications. One of the concise strategies is to transform left- and right-handed circularly polarized light (CPL) directly into distinguishable electronic signals using chiral structured materials. In this study, chiral films of β-In<sub>2</sub>S<sub>3</sub> vertical nanosheet arrays are successfully grown using a facile solvothermal route. Chirality originates from the distortion of nanosheets with left or right-handedness controlled by the introduction of <span>l</span>-/<span>d</span>-cysteine as chiral inducers. Circularly polarized photodetectors based on chiral β-In<sub>2</sub>S<sub>3</sub> films are fabricated. They exhibit good performances with a responsivity (<i>R</i>) of 8.0 A/W, photodetectivity (<i>D</i>*) of 5.0 × 10<sup>12</sup> Jones, the photocurrent dissymmetry factor (<i>g</i><sub>Iph</sub>) of 0.34, and external quantum efficiency (EQE) of 2.2 × 10<sup>3</sup> (%) for a CPL of 450 nm.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141117636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study presents a comprehensive investigation on the fabrication and characterization of piezoresistive elastomeric strain sensors using multiwalled carbon nanotubes (MWCNTs) incorporated into a silicone rubber matrix. Through meticulous experimentation and theoretical modeling, the study elucidates the intricate relationship between MWCNT concentration, mechanical properties, and electrical conductivity within the composite materials. The research reveals that composite formulations with MWCNT concentrations slightly above the percolation threshold exhibit superior strain-sensing properties. Specifically, composites containing 2 phr of MWCNTs demonstrate a remarkable gauge factor of 225, indicating enhanced sensitivity compared with higher MWCNT loadings. Mechanical testing using a tensile testing machine elucidates the complex interplay between MWCNT loading and tensile properties. However, subsequent enhancements in tensile properties with increasing MWCNT content suggest improved dispersion and reinforcing effects, highlighting the potential for tailored mechanical performance. The investigation of DC conductivity demonstrates a significant increase with rising MWCNT concentrations, indicative of the formation of conductive networks as MWCNTs reach the percolation threshold. Enhanced charge transport and constructive interface interactions facilitate efficient electron flow through the composite, which is crucial for applications requiring electrical conductivity. Moreover, the analysis of dielectric permittivity reveals its concentration-dependent increase, attributed to the large surface area of MWCNTs promoting stronger interactions with the matrix and enhanced polarization under electric fields. Drastic changes in AC conductivity at lower frequency levels within the percolation region suggest influences of dielectric relaxation, polarization effects, and formation of conductive paths. This study underscores the potential of MWCNTs-silicone rubber composites as versatile materials for advanced strain-sensing applications, offering tunable mechanical and electrical properties tailored to specific requirements.
{"title":"Development of Silicone Rubber-Multiwalled Carbon Nanotube Composites for Strain-Sensing Applications: Morphological, Mechanical, Electrical, and Sensing Properties","authors":"Sisanth Krishnageham Sidharthan, Jibin Keloth Paduvilan, Prajitha Velayudhan, Nandakumar Kalarikkal, Szczepan Zapotoczny* and Sabu Thomas*, ","doi":"10.1021/acsaelm.4c00480","DOIUrl":"10.1021/acsaelm.4c00480","url":null,"abstract":"<p >This study presents a comprehensive investigation on the fabrication and characterization of piezoresistive elastomeric strain sensors using multiwalled carbon nanotubes (MWCNTs) incorporated into a silicone rubber matrix. Through meticulous experimentation and theoretical modeling, the study elucidates the intricate relationship between MWCNT concentration, mechanical properties, and electrical conductivity within the composite materials. The research reveals that composite formulations with MWCNT concentrations slightly above the percolation threshold exhibit superior strain-sensing properties. Specifically, composites containing 2 phr of MWCNTs demonstrate a remarkable gauge factor of 225, indicating enhanced sensitivity compared with higher MWCNT loadings. Mechanical testing using a tensile testing machine elucidates the complex interplay between MWCNT loading and tensile properties. However, subsequent enhancements in tensile properties with increasing MWCNT content suggest improved dispersion and reinforcing effects, highlighting the potential for tailored mechanical performance. The investigation of DC conductivity demonstrates a significant increase with rising MWCNT concentrations, indicative of the formation of conductive networks as MWCNTs reach the percolation threshold. Enhanced charge transport and constructive interface interactions facilitate efficient electron flow through the composite, which is crucial for applications requiring electrical conductivity. Moreover, the analysis of dielectric permittivity reveals its concentration-dependent increase, attributed to the large surface area of MWCNTs promoting stronger interactions with the matrix and enhanced polarization under electric fields. Drastic changes in AC conductivity at lower frequency levels within the percolation region suggest influences of dielectric relaxation, polarization effects, and formation of conductive paths. This study underscores the potential of MWCNTs-silicone rubber composites as versatile materials for advanced strain-sensing applications, offering tunable mechanical and electrical properties tailored to specific requirements.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141116906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}