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Wavelength-Resolved Control of Photovoltaic Screening and Defect-Mediated Doping in Photo-Ferroelectric/Graphene Devices 光铁电/石墨烯器件中光电筛选和缺陷介导掺杂的波长分辨控制
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-06 DOI: 10.1021/acsaelm.5c02316
Krishna Prasad Maity*, , , Mohd Uvais, , , Jean-François Dayen, , , Bernard Doudin, , , Roman Gumeniuk, , and , Bohdan Kundys*, 

Ferroelectrics enable large charge doping of two-dimensional overlayers, but the coexistence of switching and nonswitching charge dynamics complicate electro-optical analysis. Here, we investigate the optoelectronic response of a ferroelectric/graphene device under 365 and 530 nm illumination, disentangling effects on ferroelectric dipole alignment from extrinsic current pathways. Graphene acts as a high-gain sensor, amplifying subtle polarization dynamics into a pronounced resistance difference. By resolving switching and nonswitching channels in dark and illuminated conditions, we reveal a competition between photovoltaic charge screening and defect-assisted excitation that governs device electrostatics. Above-band gap illumination generates free carriers that induce leaky ferroelectric hysteresis and suppress the graphene resistance ratio between opposite remanent polarization states from 290% to 15% due to dynamic photovoltaic charge screening. In contrast, 530 nm illumination primarily induces charge redistribution in ferroelectrics via defect-state excitation, leading to a significantly weaker suppression of the resistance variation of graphene. These results establish practical guidelines for selecting photon energy and intensity to either preserve remanent polarization while tuning channel doping or deliberately reconfigure polarization through optical programming.

铁电体可以实现二维覆盖层的大电荷掺杂,但开关和非开关电荷动力学的共存使电光分析复杂化。在这里,我们研究了365 nm和530 nm光照下铁电/石墨烯器件的光电响应,以及从外部电流路径中解纠缠对铁电偶极子排列的影响。石墨烯作为高增益传感器,将微妙的极化动力学放大为明显的电阻差。通过解决黑暗和照明条件下的开关和非开关通道,我们揭示了光伏电荷筛选和缺陷辅助激励之间的竞争,这决定了器件的静电。带隙以上照明产生自由载流子,引起漏铁电滞后,并通过动态光伏电荷筛选将相反剩余极化态之间的石墨烯电阻比从290%抑制到15%。相比之下,530 nm照明主要通过缺陷态激发诱导铁电体中的电荷重新分布,导致石墨烯电阻变化的抑制明显减弱。这些结果为选择光子能量和强度以在调整通道掺杂时保持剩余偏振或通过光学编程故意重新配置偏振提供了实用指南。
{"title":"Wavelength-Resolved Control of Photovoltaic Screening and Defect-Mediated Doping in Photo-Ferroelectric/Graphene Devices","authors":"Krishna Prasad Maity*,&nbsp;, ,&nbsp;Mohd Uvais,&nbsp;, ,&nbsp;Jean-François Dayen,&nbsp;, ,&nbsp;Bernard Doudin,&nbsp;, ,&nbsp;Roman Gumeniuk,&nbsp;, and ,&nbsp;Bohdan Kundys*,&nbsp;","doi":"10.1021/acsaelm.5c02316","DOIUrl":"https://doi.org/10.1021/acsaelm.5c02316","url":null,"abstract":"<p >Ferroelectrics enable large charge doping of two-dimensional overlayers, but the coexistence of switching and nonswitching charge dynamics complicate electro-optical analysis. Here, we investigate the optoelectronic response of a ferroelectric/graphene device under 365 and 530 nm illumination, disentangling effects on ferroelectric dipole alignment from extrinsic current pathways. Graphene acts as a high-gain sensor, amplifying subtle polarization dynamics into a pronounced resistance difference. By resolving switching and nonswitching channels in dark and illuminated conditions, we reveal a competition between photovoltaic charge screening and defect-assisted excitation that governs device electrostatics. Above-band gap illumination generates free carriers that induce leaky ferroelectric hysteresis and suppress the graphene resistance ratio between opposite remanent polarization states from 290% to 15% due to dynamic photovoltaic charge screening. In contrast, 530 nm illumination primarily induces charge redistribution in ferroelectrics via defect-state excitation, leading to a significantly weaker suppression of the resistance variation of graphene. These results establish practical guidelines for selecting photon energy and intensity to either preserve remanent polarization while tuning channel doping or deliberately reconfigure polarization through optical programming.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 4","pages":"1635–1642"},"PeriodicalIF":4.7,"publicationDate":"2026-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147274667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Controlled Sn-Doped MoO3 Nanobelts for Dual Mode Sensing of Ethanol and Temperature 可控掺锡MoO3纳米带用于乙醇和温度双模式传感
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-06 DOI: 10.1021/acsaelm.5c02519
Haolong Sun, , , Tingting Liang, , , Tingting Zhu, , , Pengqi Hai*, , , Sen Liang*, , and , Xiaoshan Wang*, 

Multifunctional flexible electronic sensors are highly demanded since single-function variants fail to satisfy portable/wearable electronics’ complex and growing requirements. Currently fabricated via multistep integration of single-function sensors, developing a single multifunctional sensing material remains challenging. In this study, Sn-doped MoO3 (SnxMo1–xO3) nanobelts were fabricated into a dual-mode sensor for ethanol gas and temperature detection. The Sn0.05Mo0.95O3 sensor detected ethanol at an ultralow concentration of 0.1 ppm at room temperature. Its response to 10 ppm of ethanol was 2.1 times higher than that of pure MoO3 sensor. In addition, the Sn0.05Mo0.95O3 temperature sensor demonstrated a negative temperature coefficient of resistance (TRC) of −0.0183 °C1, an 8-fold improvement over pure MoO3. The enhanced sensing performance of Sn doping can be ascribed to four key factors: a narrowed band gap, reduced adsorption energy, increased charge transfer, and an accelerated electron transfer rate. This research provides a highly efficient sensing material with promising practical applications for dual-mode ethanol and temperature detection.

多功能柔性电子传感器是高需求的,因为单一功能的变体不能满足便携式/可穿戴电子产品的复杂和不断增长的需求。目前通过多步骤集成的单一功能传感器制造,开发单一的多功能传感材料仍然具有挑战性。本研究将掺杂锡的MoO3 (SnxMo1-xO3)纳米带制成乙醇气体和温度检测的双模传感器。Sn0.05Mo0.95O3传感器在室温下检测超低浓度为0.1 ppm的乙醇。其对10ppm乙醇的响应比纯MoO3传感器高2.1倍。此外,Sn0.05Mo0.95O3温度传感器显示负温度电阻系数(TRC)为- 0.0183°C-1,比纯MoO3提高了8倍。锡掺杂的传感性能的增强可归因于四个关键因素:带隙的缩小、吸附能的降低、电荷转移的增加和电子转移速率的加快。该研究为乙醇和温度双模检测提供了一种具有实际应用前景的高效传感材料。
{"title":"Controlled Sn-Doped MoO3 Nanobelts for Dual Mode Sensing of Ethanol and Temperature","authors":"Haolong Sun,&nbsp;, ,&nbsp;Tingting Liang,&nbsp;, ,&nbsp;Tingting Zhu,&nbsp;, ,&nbsp;Pengqi Hai*,&nbsp;, ,&nbsp;Sen Liang*,&nbsp;, and ,&nbsp;Xiaoshan Wang*,&nbsp;","doi":"10.1021/acsaelm.5c02519","DOIUrl":"https://doi.org/10.1021/acsaelm.5c02519","url":null,"abstract":"<p >Multifunctional flexible electronic sensors are highly demanded since single-function variants fail to satisfy portable/wearable electronics’ complex and growing requirements. Currently fabricated via multistep integration of single-function sensors, developing a single multifunctional sensing material remains challenging. In this study, Sn-doped MoO<sub>3</sub> (Sn<sub><i>x</i></sub>Mo<sub>1–<i>x</i></sub>O<sub>3</sub>) nanobelts were fabricated into a dual-mode sensor for ethanol gas and temperature detection. The Sn<sub>0.05</sub>Mo<sub>0.95</sub>O<sub>3</sub> sensor detected ethanol at an ultralow concentration of 0.1 ppm at room temperature. Its response to 10 ppm of ethanol was 2.1 times higher than that of pure MoO<sub>3</sub> sensor. In addition, the Sn<sub>0.05</sub>Mo<sub>0.95</sub>O<sub>3</sub> temperature sensor demonstrated a negative temperature coefficient of resistance (TRC) of −0.0183 °C<sup>–</sup><sup>1</sup>, an 8-fold improvement over pure MoO<sub>3</sub>. The enhanced sensing performance of Sn doping can be ascribed to four key factors: a narrowed band gap, reduced adsorption energy, increased charge transfer, and an accelerated electron transfer rate. This research provides a highly efficient sensing material with promising practical applications for dual-mode ethanol and temperature detection.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 4","pages":"1774–1783"},"PeriodicalIF":4.7,"publicationDate":"2026-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147280435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wafer-Scale Ultra-Low Defect Transfer of Graphene via Hydrophobicity-Mediated Electrostatic Adhesion 疏水介导静电粘附石墨烯的晶圆级超低缺陷转移
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-05 DOI: 10.1021/acsaelm.5c02555
Renyan Zhang, , , Yonghao Wang, , , Weijie Li, , , Xiong Li*, , , Minggang Liu, , , Liang Huang, , , Chaoqun Wang, , and , Xiangang Luo*, 

The integration of wafer-scale two-dimensional (2D) materials, such as graphene, onto device wafers remains a significant challenge for practical applications due to persistent issues of transfer-induced defects, including polymer-residue contamination and film cracks. Here, we demonstrate a van der Waals assembly technique that achieves a damage-free transfer of graphene by simultaneously modulating interfacial hydrophobicity and electrostatic charge distribution. This approach eliminates the need for polymer carriers, thereby preserving the intrinsic properties of graphene. The electrostatic conformal adhesion between copper-grown graphene and the target substrates ensures surface cleanliness and structural integrity. The intercalation of the etchant solution at the graphene-substrate interface is effectively prevented by the hydrophobic interface, which ensures direct interfacial contact and maintains the structural integrity. The transferred graphene films exhibited 99.7 ± 0.3% coverage, subnanometer root-mean-square roughness of 0.697 nm, and room-temperature field-effect mobility up to 6651 cm2·V–1·s–1. This technique is applicable to various substrates, including SiO2/Si, polyethylene terephthalate (PET), polyvinyl chloride (PVC), quartz, and sapphire, and is compatible with standard semiconductor manufacturing processes. Consequently, this transfer approach provides a scalable pathway for the fabrication of graphene-based devices.

由于转移引起的缺陷(包括聚合物残留物污染和薄膜裂纹)的持续存在,将晶圆级二维(2D)材料(如石墨烯)集成到器件晶圆上仍然是实际应用中的一个重大挑战。在这里,我们展示了一种范德华组装技术,该技术通过同时调节界面疏水性和静电电荷分布来实现石墨烯的无损伤转移。这种方法消除了对聚合物载体的需求,从而保留了石墨烯的固有特性。铜生长石墨烯与目标衬底之间的静电共形粘附确保了表面清洁度和结构完整性。疏水界面有效地阻止了蚀刻液在石墨烯-衬底界面的插层,保证了界面的直接接触,保持了结构的完整性。转移后的石墨烯薄膜覆盖率为99.7±0.3%,亚纳米均方根粗糙度为0.697 nm,室温场效应迁移率高达6651 cm2·V-1·s-1。该技术适用于各种衬底,包括SiO2/Si,聚对苯二甲酸乙二醇酯(PET),聚氯乙烯(PVC),石英和蓝宝石,并与标准半导体制造工艺兼容。因此,这种转移方法为石墨烯基器件的制造提供了可扩展的途径。
{"title":"Wafer-Scale Ultra-Low Defect Transfer of Graphene via Hydrophobicity-Mediated Electrostatic Adhesion","authors":"Renyan Zhang,&nbsp;, ,&nbsp;Yonghao Wang,&nbsp;, ,&nbsp;Weijie Li,&nbsp;, ,&nbsp;Xiong Li*,&nbsp;, ,&nbsp;Minggang Liu,&nbsp;, ,&nbsp;Liang Huang,&nbsp;, ,&nbsp;Chaoqun Wang,&nbsp;, and ,&nbsp;Xiangang Luo*,&nbsp;","doi":"10.1021/acsaelm.5c02555","DOIUrl":"https://doi.org/10.1021/acsaelm.5c02555","url":null,"abstract":"<p >The integration of wafer-scale two-dimensional (2D) materials, such as graphene, onto device wafers remains a significant challenge for practical applications due to persistent issues of transfer-induced defects, including polymer-residue contamination and film cracks. Here, we demonstrate a van der Waals assembly technique that achieves a damage-free transfer of graphene by simultaneously modulating interfacial hydrophobicity and electrostatic charge distribution. This approach eliminates the need for polymer carriers, thereby preserving the intrinsic properties of graphene. The electrostatic conformal adhesion between copper-grown graphene and the target substrates ensures surface cleanliness and structural integrity. The intercalation of the etchant solution at the graphene-substrate interface is effectively prevented by the hydrophobic interface, which ensures direct interfacial contact and maintains the structural integrity. The transferred graphene films exhibited 99.7 ± 0.3% coverage, subnanometer root-mean-square roughness of 0.697 nm, and room-temperature field-effect mobility up to 6651 cm<sup>2</sup>·V<sup>–1</sup>·s<sup>–1</sup>. This technique is applicable to various substrates, including SiO<sub>2</sub>/Si, polyethylene terephthalate (PET), polyvinyl chloride (PVC), quartz, and sapphire, and is compatible with standard semiconductor manufacturing processes. Consequently, this transfer approach provides a scalable pathway for the fabrication of graphene-based devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 4","pages":"1821–1829"},"PeriodicalIF":4.7,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147280443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Interfacial Regulation Strategies of Perovskite Light-Emitting Diodes through Alkali Metal Compounds 碱金属化合物对钙钛矿发光二极管界面调控策略的影响
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-05 DOI: 10.1021/acsaelm.5c02309
Yongjian Chen, , , Xiankan Zeng, , , Wen Li*, , and , Weiqing Yang*, 

Perovskite light-emitting diodes exhibit great potential in the fields of display and lighting, yet their performance is still limited by interfacial nonradiative recombination and charge imbalance. Although alkali metal compounds (AMCs) have been extensively studied as perovskite lattice components or bulk dopants, the strategy of using AMCs as functional interlayers or interfacial modifiers has received far less attention than it deserves. Despite the fact that this strategy has been proven effective, there is still a lack of systematic sorting and review of its multidimensional action mechanisms. We aim to fill this gap and explore the multiple interfacial roles of AMCs. This review not only provides a perspective for understanding the interfacial physicochemical processes related to AMCs, but also offers theoretical insights for the design and fabrication of high-performance and stable device.

钙钛矿发光二极管在显示和照明领域显示出巨大的潜力,但其性能仍然受到界面非辐射复合和电荷不平衡的限制。虽然碱金属化合物(AMCs)作为钙钛矿晶格组分或块状掺杂剂已经得到了广泛的研究,但使用AMCs作为功能中间层或界面改性剂的策略却远远没有得到应有的重视。尽管这一战略已被证明是有效的,但仍然缺乏对其多方面行动机制的系统整理和审查。我们的目标是填补这一空白,并探索amc的多重接口作用。本综述不仅为理解与AMCs相关的界面物理化学过程提供了一个视角,而且为设计和制造高性能、稳定的器件提供了理论见解。
{"title":"The Interfacial Regulation Strategies of Perovskite Light-Emitting Diodes through Alkali Metal Compounds","authors":"Yongjian Chen,&nbsp;, ,&nbsp;Xiankan Zeng,&nbsp;, ,&nbsp;Wen Li*,&nbsp;, and ,&nbsp;Weiqing Yang*,&nbsp;","doi":"10.1021/acsaelm.5c02309","DOIUrl":"https://doi.org/10.1021/acsaelm.5c02309","url":null,"abstract":"<p >Perovskite light-emitting diodes exhibit great potential in the fields of display and lighting, yet their performance is still limited by interfacial nonradiative recombination and charge imbalance. Although alkali metal compounds (AMCs) have been extensively studied as perovskite lattice components or bulk dopants, the strategy of using AMCs as functional interlayers or interfacial modifiers has received far less attention than it deserves. Despite the fact that this strategy has been proven effective, there is still a lack of systematic sorting and review of its multidimensional action mechanisms. We aim to fill this gap and explore the multiple interfacial roles of AMCs. This review not only provides a perspective for understanding the interfacial physicochemical processes related to AMCs, but also offers theoretical insights for the design and fabrication of high-performance and stable device.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 4","pages":"1456–1465"},"PeriodicalIF":4.7,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147274657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transparent ZnO/In2O3 Heterojunction Artificial Synapse for Neuromorphic Computing and Logical Operations 用于神经形态计算和逻辑运算的透明ZnO/In2O3异质结人工突触
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-05 DOI: 10.1021/acsaelm.5c02651
Xiuqing Cao*, , , Qingqing Zheng, , , Libin Wang*, , , Zufang Lin, , , Juan Meng, , , Shoulei Xu, , , Yuyang Huang, , and , Wen Deng, 

Neuromorphic computing, inspired by the brain, has emerged as a potential approach to overcome the current von Neumann bottleneck. Herein, a transparent and integrable ZnO/In2O3 heterojunction crossbar artificial synapse was fabricated using magnetron sputtering for neuromorphic computing. The resistive switching behavior of the device originates from the regulated migration of oxygen vacancies within the heterojunction under an applied electric field. Moreover, the fabricated artificial synapse exhibited exceptional stability, with its resistive switching characteristics remaining unchanged after six months of exposure to ambient conditions. The device demonstrates typical synaptic behavior, including paired-pulse facilitation (PPF), short-term to long-term memory transitions, spike-timing-dependent plasticity (STDP), potentiation/depression, and learning–forgetting processes. Furthermore, the fabricated device-based reservoir computing enabled efficient temporal information processing, and an artificial neural network (ANN) incorporating the device’s synaptic achieved 92.37% recognition accuracy of the MINIST database. Besides, in combination with MATLAB, basic digital logic circuits such as OR, AND, XOR, and XNOR were successfully implemented. Based on this, a half-adder and a parity checker were further constructed to achieve the encryption and decryption of information. This work demonstrates the feasibility of ZnO-based heterojunction memristors to develop multifunctional electronic devices for neuromorphic computing and logical operation applications.

受大脑启发的神经形态计算已经成为克服当前冯·诺伊曼瓶颈的一种潜在方法。本文采用磁控溅射技术制备了透明可积ZnO/In2O3异质结交叉棒人工突触,用于神经形态计算。该器件的电阻开关特性源于外加电场作用下异质结内氧空位的调控迁移。此外,人造突触表现出优异的稳定性,在环境条件下暴露6个月后其电阻开关特性保持不变。该装置展示了典型的突触行为,包括成对脉冲促进(PPF)、短期到长期记忆的转换、峰值时间依赖的可塑性(STDP)、增强/抑制和学习-遗忘过程。此外,基于制造装置的储层计算实现了高效的时间信息处理,结合装置突触的人工神经网络(ANN)对MINIST数据库的识别准确率达到92.37%。并结合MATLAB成功实现了OR、AND、XOR、XNOR等基本数字逻辑电路。在此基础上,进一步构造了半加法器和奇偶校验器来实现信息的加解密。这项工作证明了zno基异质结忆阻器用于神经形态计算和逻辑运算应用的多功能电子器件的可行性。
{"title":"Transparent ZnO/In2O3 Heterojunction Artificial Synapse for Neuromorphic Computing and Logical Operations","authors":"Xiuqing Cao*,&nbsp;, ,&nbsp;Qingqing Zheng,&nbsp;, ,&nbsp;Libin Wang*,&nbsp;, ,&nbsp;Zufang Lin,&nbsp;, ,&nbsp;Juan Meng,&nbsp;, ,&nbsp;Shoulei Xu,&nbsp;, ,&nbsp;Yuyang Huang,&nbsp;, and ,&nbsp;Wen Deng,&nbsp;","doi":"10.1021/acsaelm.5c02651","DOIUrl":"https://doi.org/10.1021/acsaelm.5c02651","url":null,"abstract":"<p >Neuromorphic computing, inspired by the brain, has emerged as a potential approach to overcome the current von Neumann bottleneck. Herein, a transparent and integrable ZnO/In<sub>2</sub>O<sub>3</sub> heterojunction crossbar artificial synapse was fabricated using magnetron sputtering for neuromorphic computing. The resistive switching behavior of the device originates from the regulated migration of oxygen vacancies within the heterojunction under an applied electric field. Moreover, the fabricated artificial synapse exhibited exceptional stability, with its resistive switching characteristics remaining unchanged after six months of exposure to ambient conditions. The device demonstrates typical synaptic behavior, including paired-pulse facilitation (PPF), short-term to long-term memory transitions, spike-timing-dependent plasticity (STDP), potentiation/depression, and learning–forgetting processes. Furthermore, the fabricated device-based reservoir computing enabled efficient temporal information processing, and an artificial neural network (ANN) incorporating the device’s synaptic achieved 92.37% recognition accuracy of the MINIST database. Besides, in combination with MATLAB, basic digital logic circuits such as OR, AND, XOR, and XNOR were successfully implemented. Based on this, a half-adder and a parity checker were further constructed to achieve the encryption and decryption of information. This work demonstrates the feasibility of ZnO-based heterojunction memristors to develop multifunctional electronic devices for neuromorphic computing and logical operation applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 4","pages":"1902–1917"},"PeriodicalIF":4.7,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147280445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanically Amplified Zeta-Fold Paper-Based Composite with Sustainable Design for Enhanced Pressure-Driven Electrical Response 机械放大zeta折叠纸基复合材料与可持续设计增强压力驱动的电响应
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-05 DOI: 10.1021/acsaelm.5c02595
Yuyang Huang, , , Junyao Wang, , , Yuhang Wang, , , Yanwei Wang, , , Yuhan Huang, , , Zhida Li, , , Jianlang Shu, , , Tinggang Zhang, , and , Huan Liu*, 

Developing sustainable and flexible materials that can efficiently convert mechanical stimuli into electrical signals remains a key challenge in soft electronics. In this work, we demonstrate a Zeta-fold structured paper-based composite composed of α-cellulose fibers and carbon black that exhibits mechanically amplified conductivity and pressure-dependent electrical response. The folded configuration forms a hierarchical contact–separation interface, which redistributes stress and reconstructs conductive networks under compression. This design enhances the electromechanical coupling, giving a high sensitivity of 0.12 kPa–1, a low detection limit of 20 Pa, and fast response and recovery times of 100 and 80 ms, respectively. The composite shows excellent stability over 1000 cycles and consistent performance during human-motion and logic-signal detection. The Zeta-fold approach offers a simple and environmentally friendly route to integrate structural mechanics with electronic functionality, suggesting broad potential for sustainable and flexible electronic systems.

开发能够有效地将机械刺激转换为电信号的可持续和柔性材料仍然是软电子学的关键挑战。在这项工作中,我们展示了一种由α-纤维素纤维和炭黑组成的泽塔折叠结构纸基复合材料,该复合材料具有机械放大的导电性和压力相关的电响应。折叠构型形成层次化的接触分离界面,在压缩作用下重新分配应力,重构导电网络。该设计增强了机电耦合,具有0.12 kPa-1的高灵敏度,20 Pa的低检测限,快速响应和恢复时间分别为100 ms和80 ms。该复合材料在1000次循环中表现出优异的稳定性,在人体运动和逻辑信号检测中表现出一致的性能。Zeta-fold方法提供了一种简单而环保的途径,将结构力学与电子功能结合起来,这表明了可持续和灵活的电子系统的广阔潜力。
{"title":"Mechanically Amplified Zeta-Fold Paper-Based Composite with Sustainable Design for Enhanced Pressure-Driven Electrical Response","authors":"Yuyang Huang,&nbsp;, ,&nbsp;Junyao Wang,&nbsp;, ,&nbsp;Yuhang Wang,&nbsp;, ,&nbsp;Yanwei Wang,&nbsp;, ,&nbsp;Yuhan Huang,&nbsp;, ,&nbsp;Zhida Li,&nbsp;, ,&nbsp;Jianlang Shu,&nbsp;, ,&nbsp;Tinggang Zhang,&nbsp;, and ,&nbsp;Huan Liu*,&nbsp;","doi":"10.1021/acsaelm.5c02595","DOIUrl":"https://doi.org/10.1021/acsaelm.5c02595","url":null,"abstract":"<p >Developing sustainable and flexible materials that can efficiently convert mechanical stimuli into electrical signals remains a key challenge in soft electronics. In this work, we demonstrate a Zeta-fold structured paper-based composite composed of α-cellulose fibers and carbon black that exhibits mechanically amplified conductivity and pressure-dependent electrical response. The folded configuration forms a hierarchical contact–separation interface, which redistributes stress and reconstructs conductive networks under compression. This design enhances the electromechanical coupling, giving a high sensitivity of 0.12 kPa<sup>–1</sup>, a low detection limit of 20 Pa, and fast response and recovery times of 100 and 80 ms, respectively. The composite shows excellent stability over 1000 cycles and consistent performance during human-motion and logic-signal detection. The Zeta-fold approach offers a simple and environmentally friendly route to integrate structural mechanics with electronic functionality, suggesting broad potential for sustainable and flexible electronic systems.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 4","pages":"1869–1880"},"PeriodicalIF":4.7,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147274656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deep Learning-Driven Selectivity Enhancement in Synergistic p-Cu2O/n-IGZO Gas Sensor Arrays 协同p-Cu2O/n-IGZO气体传感器阵列的深度学习驱动选择性增强
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-05 DOI: 10.1021/acsaelm.5c02548
Kuo-Yuan Juan, , , Ping-Hua Guo, , and , Chun-Ying Huang*, 

We demonstrate a monolithic gas sensor array that integrates p-type Cu2O and n-type a-IGZO films via a UV-assisted precursor patterning method, eliminating the need for etching or development steps. This bidirectional configuration enables p- and n-type sensors to exhibit opposite resistance changes toward the same gas, providing deep learning models with an additional discriminative dimension. The sensor array was evaluated using four representative target gases: ozone (O3), nitrogen dioxide (NO2), hydrogen peroxide (H2O2), and nitrogen monoxide (NO), which include both inorganic oxidizing species and volatile organic compounds. A neural network trained on full resistance–time profiles achieved classification accuracies above 95%, significantly outperforming traditional machine learning algorithms such as support vector machine (76%), random forest (69%), and naïve bayes (50%). Compared to arrays with only a-IGZO sensors (68% accuracy), the inclusion of Cu2O/a-IGZO heterojunctions improved accuracy by over 25%. The system also achieved high-precision gas concentration prediction (R2 > 0.98) and demonstrated excellent humidity tolerance via baseline correction. This scalable, lithography-free strategy offers strong potential for compact and high-selectivity gas sensing systems suitable for portable and real-world environmental monitoring applications.

我们展示了一种单片气体传感器阵列,该阵列通过uv辅助前驱体图图化方法集成了p型Cu2O和n型a- igzo薄膜,从而消除了蚀刻或开发步骤的需要。这种双向配置使p型和n型传感器对相同气体表现出相反的阻力变化,为深度学习模型提供了额外的判别维度。利用臭氧(O3)、二氧化氮(NO2)、过氧化氢(H2O2)和一氧化氮(NO)四种具有代表性的目标气体对传感器阵列进行了评估,其中包括无机氧化物质和挥发性有机化合物。在全阻力时间曲线上训练的神经网络实现了95%以上的分类准确率,显著优于传统的机器学习算法,如支持向量机(76%)、随机森林(69%)和naïve贝叶斯(50%)。与仅含有a-IGZO传感器的阵列(68%的精度)相比,包含Cu2O/a-IGZO异质结的阵列精度提高了25%以上。该系统还实现了高精度的气体浓度预测(R2 > 0.98),并通过基线校正显示出出色的湿度耐受性。这种可扩展的无光刻策略为适用于便携式和实际环境监测应用的紧凑型高选择性气体传感系统提供了强大的潜力。
{"title":"Deep Learning-Driven Selectivity Enhancement in Synergistic p-Cu2O/n-IGZO Gas Sensor Arrays","authors":"Kuo-Yuan Juan,&nbsp;, ,&nbsp;Ping-Hua Guo,&nbsp;, and ,&nbsp;Chun-Ying Huang*,&nbsp;","doi":"10.1021/acsaelm.5c02548","DOIUrl":"https://doi.org/10.1021/acsaelm.5c02548","url":null,"abstract":"<p >We demonstrate a monolithic gas sensor array that integrates p-type Cu<sub>2</sub>O and n-type a-IGZO films via a UV-assisted precursor patterning method, eliminating the need for etching or development steps. This bidirectional configuration enables p- and n-type sensors to exhibit opposite resistance changes toward the same gas, providing deep learning models with an additional discriminative dimension. The sensor array was evaluated using four representative target gases: ozone (O<sub>3</sub>), nitrogen dioxide (NO<sub>2</sub>), hydrogen peroxide (H<sub>2</sub>O<sub>2</sub>), and nitrogen monoxide (NO), which include both inorganic oxidizing species and volatile organic compounds. A neural network trained on full resistance–time profiles achieved classification accuracies above 95%, significantly outperforming traditional machine learning algorithms such as support vector machine (76%), random forest (69%), and naïve bayes (50%). Compared to arrays with only a-IGZO sensors (68% accuracy), the inclusion of Cu<sub>2</sub>O/a-IGZO heterojunctions improved accuracy by over 25%. The system also achieved high-precision gas concentration prediction (<i>R</i><sup>2</sup> &gt; 0.98) and demonstrated excellent humidity tolerance via baseline correction. This scalable, lithography-free strategy offers strong potential for compact and high-selectivity gas sensing systems suitable for portable and real-world environmental monitoring applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 4","pages":"1808–1820"},"PeriodicalIF":4.7,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147280444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High-Rate, Long-Life and Extremely Safe Cobalt-Ammonium Hybrid Battery 一种高倍率、长寿命、极其安全的钴铵混合电池
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-05 DOI: 10.1021/acsaelm.5c02510
Jia Si, , , Zihao He, , , Qiang Wang*, , , Liangliang Su, , , Yalong Yang*, , , Ning Wei, , , Xulai Zhu, , , Ranyun Wu, , , Zhu Ma, , and , Wei Zeng*, 

Aqueous ammonium-ion batteries (AAIBs) are attracting increasing interest because of the abundance and low cost of ammonium salts and the inherent safety of aqueous electrolytes. However, the development of AAIB anodes remains limited, and many reported anodes suffer from rapid capacity fading and unstable Coulombic efficiency, often associated with strong hydrogen-bonding effects. Here, we report the first cobalt–ammonium hybrid battery consisting of a metallic Co anode, a mixed CoSO4/(NH4)2SO4 aqueous electrolyte, and an Fe[Fe(CN)6] (FeHCF) cathode. The battery operates via coupled NH4+ insertion/extraction at the cathode and Co plating/stripping at the anode. In three-electrode tests, the optimized FeHCF/multiwalled carbon nanotube (FeHCF/MWCNT) composite cathode delivers 94 mAh g–1 at 0.2 A g–1 and retains 78.5% of its capacity with ∼100% Coulombic efficiency after 1000 cycles at 0.8 A g–1. The full cell achieves 112 mAh g–1 and 88 Wh kg–1 at 0.2 A g–1, maintaining 90% capacity with ∼100% Coulombic efficiency after 1000 cycles at 0.8 A g–1. A quasi-solid-state device further demonstrates 73 mAh g–1 at 0.2 A g–1 and stable cycling over 1000 cycles. These results demonstrate the feasibility of cobalt–ammonium hybrid chemistry for safe and durable aqueous energy storage.

由于铵盐丰富、成本低廉以及水溶液的安全性,水铵离子电池正受到越来越多的关注。然而,AAIB阳极的发展仍然有限,许多报道的阳极存在容量快速衰减和库仑效率不稳定的问题,通常与强氢键效应有关。在这里,我们报道了第一个由金属Co阳极,混合CoSO4/(NH4)2SO4水溶液电解质和Fe[Fe(CN)6] (FeHCF)阴极组成的钴铵混合电池。电池通过阴极的NH4+插入/提取和阳极的Co电镀/剥离来工作。在三电极测试中,优化的FeHCF/多壁碳纳米管(FeHCF/MWCNT)复合阴极在0.2 A g-1下提供94 mAh g-1,在0.8 A g-1下循环1000次后保持78.5%的容量,库仑效率为100%。在0.2 A g-1下,全电池可达到112 mAh g-1和88 Wh kg-1,在0.8 A g-1下1000次循环后保持90%的容量和~ 100%的库仑效率。准固态器件进一步展示了在0.2 A g-1下73 mAh g-1和超过1000次循环的稳定循环。这些结果证明了钴铵混合化学用于安全耐用的水储能的可行性。
{"title":"A High-Rate, Long-Life and Extremely Safe Cobalt-Ammonium Hybrid Battery","authors":"Jia Si,&nbsp;, ,&nbsp;Zihao He,&nbsp;, ,&nbsp;Qiang Wang*,&nbsp;, ,&nbsp;Liangliang Su,&nbsp;, ,&nbsp;Yalong Yang*,&nbsp;, ,&nbsp;Ning Wei,&nbsp;, ,&nbsp;Xulai Zhu,&nbsp;, ,&nbsp;Ranyun Wu,&nbsp;, ,&nbsp;Zhu Ma,&nbsp;, and ,&nbsp;Wei Zeng*,&nbsp;","doi":"10.1021/acsaelm.5c02510","DOIUrl":"https://doi.org/10.1021/acsaelm.5c02510","url":null,"abstract":"<p >Aqueous ammonium-ion batteries (AAIBs) are attracting increasing interest because of the abundance and low cost of ammonium salts and the inherent safety of aqueous electrolytes. However, the development of AAIB anodes remains limited, and many reported anodes suffer from rapid capacity fading and unstable Coulombic efficiency, often associated with strong hydrogen-bonding effects. Here, we report the first cobalt–ammonium hybrid battery consisting of a metallic Co anode, a mixed CoSO<sub>4</sub>/(NH<sub>4</sub>)<sub>2</sub>SO<sub>4</sub> aqueous electrolyte, and an Fe[Fe(CN)<sub>6</sub>] (FeHCF) cathode. The battery operates via coupled NH<sub>4</sub><sup>+</sup> insertion/extraction at the cathode and Co plating/stripping at the anode. In three-electrode tests, the optimized FeHCF/multiwalled carbon nanotube (FeHCF/MWCNT) composite cathode delivers 94 mAh g<sup>–1</sup> at 0.2 A g<sup>–1</sup> and retains 78.5% of its capacity with ∼100% Coulombic efficiency after 1000 cycles at 0.8 A g<sup>–1</sup>. The full cell achieves 112 mAh g<sup>–1</sup> and 88 Wh kg<sup>–1</sup> at 0.2 A g<sup>–1</sup>, maintaining 90% capacity with ∼100% Coulombic efficiency after 1000 cycles at 0.8 A g<sup>–1</sup>. A quasi-solid-state device further demonstrates 73 mAh g<sup>–1</sup> at 0.2 A g<sup>–1</sup> and stable cycling over 1000 cycles. These results demonstrate the feasibility of cobalt–ammonium hybrid chemistry for safe and durable aqueous energy storage.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 4","pages":"1765–1773"},"PeriodicalIF":4.7,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147274655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bioinspired Vertically Aligned 2D ZnO Surface Nanostructures Functionalized with Carbon Quantum Dots for Electrocatalytic Monitoring of Norfloxacin 碳量子点功能化的仿生垂直排列二维ZnO表面纳米结构用于诺氟沙星电催化监测
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-04 DOI: 10.1021/acsaelm.5c02344
Chandra Bhan,  and , Animes Kumar Golder*, 

The roles of nanostructured materials are crucial for monitoring and quantifying emerging environmental contaminants that pose serious ecological and health risks. This study reports the bioinspired synthesis of 2D vertically aligned ZnO nanostructures onto fluorine-doped tin oxide glass using Sechium edule (SE) fruit extract and its functionalization with carbon quantum dots (CQDs-ZnOVANs(bio)/FTO) fabricated using carbon-rich remnant peel. The functionalized platform was tested for electrocatalytic monitoring of norfloxacin (NFX) in environmental matrices. ZnOVANs(bio)/FTO modified with CQDs at an immersion time of 1.5 min (CQDs1.5-ZnOVANs(bio)/FTO) oriented vertically with an average length of 965.3 nm and a thickness of 46.3 nm with high crystallinity. The average particle size of CQDs was 4.7 nm with an amorphous nature. CQDs1.5-ZnOVANs(bio)/FTO exhibited 2.6- and 2.7-fold enhancement in anodic current density and electroactive area (Ae), respectively, along with a 34.6% decrement in charge transfer resistance (Rp) compared to ZnOVANs(bio)/FTO. NFX monitoring at CQDs1.5-ZnOVANs(bio)/FTO took place in a two-electron and two-proton transfer process with a E0 of 1.042 V, rate constant (k0) of 0.105 s–1, and surface coverage by NFX ions (Γ*) of 2.54 × 10–11 mol cm–2. CQDs1.5-ZnOVANs(bio)/FTO exhibited a detection limit of 0.0066 μM and sensitivity of 0.1903 μA μM–1 cm–2 within 0.25–40 μM NFX. The developed electrode exhibited excellent stability with only 8.1% reduction in anodic peak current up to the 15th reuse cycle of the same sensing platform. The common antibiotics, including ciprofloxacin, phenylbutazone, sulfamethoxazole, chloramphenicol, chloroquine, and furazolidone, could not interfere with the NFX monitoring. CQDs1.5-ZnOVANs(bio)/FTO could effectively monitor and quantify NFX spiked in environmental samples, and the results are comparable to liquid chromatography.

纳米结构材料的作用对于监测和量化构成严重生态和健康风险的新出现的环境污染物至关重要。本研究报道了在含氟氧化锡玻璃上以硒果提取物为原料合成二维垂直排列ZnO纳米结构,并利用富碳残皮制备碳量子点(CQDs-ZnOVANs(bio)/FTO)对其进行功能化。对该功能化平台进行了环境基质中诺氟沙星(NFX)电催化监测的试验。CQDs对ZnOVANs(bio)/FTO (CQDs1.5-ZnOVANs(bio)/FTO)进行了垂直定向修饰,平均长度为965.3 nm,厚度为46.3 nm,结晶度高。CQDs的平均粒径为4.7 nm,具有非晶性质。与ZnOVANs(bio)/FTO相比,CQDs1.5-ZnOVANs(bio)/FTO的阳极电流密度和电活性面积(Ae)分别提高2.6倍和2.7倍,电荷转移电阻(Rp)降低34.6%。在CQDs1.5-ZnOVANs(bio)/FTO中,NFX监测发生在双电子双质子转移过程中,E0为1.042 V,速率常数(k0)为0.105 s-1, NFX离子(Γ*)的表面覆盖率为2.54 × 10-11 mol cm-2。CQDs1.5-ZnOVANs(bio)/FTO在0.25 ~ 40 μM NFX范围内的检出限为0.0066 μM,灵敏度为0.1903 μA μM - 1 cm-2。该电极具有优异的稳定性,在相同传感平台的第15次重复使用循环中,阳极峰值电流仅降低8.1%。常用抗生素环丙沙星、苯丁酮、磺胺甲恶唑、氯霉素、氯喹、呋喃唑酮等对NFX监测无干扰。CQDs1.5-ZnOVANs(bio)/FTO可以有效地监测和定量环境样品中添加的NFX,结果与液相色谱法相当。
{"title":"Bioinspired Vertically Aligned 2D ZnO Surface Nanostructures Functionalized with Carbon Quantum Dots for Electrocatalytic Monitoring of Norfloxacin","authors":"Chandra Bhan,&nbsp; and ,&nbsp;Animes Kumar Golder*,&nbsp;","doi":"10.1021/acsaelm.5c02344","DOIUrl":"https://doi.org/10.1021/acsaelm.5c02344","url":null,"abstract":"<p >The roles of nanostructured materials are crucial for monitoring and quantifying emerging environmental contaminants that pose serious ecological and health risks. This study reports the bioinspired synthesis of 2D vertically aligned ZnO nanostructures onto fluorine-doped tin oxide glass using <i>Sechium edule</i> (SE) fruit extract and its functionalization with carbon quantum dots (CQDs-ZnOVANs(bio)/FTO) fabricated using carbon-rich remnant peel. The functionalized platform was tested for electrocatalytic monitoring of norfloxacin (NFX) in environmental matrices. ZnOVANs(bio)/FTO modified with CQDs at an immersion time of 1.5 min (CQDs<sub>1.5</sub>-ZnOVANs(bio)/FTO) oriented vertically with an average length of 965.3 nm and a thickness of 46.3 nm with high crystallinity. The average particle size of CQDs was 4.7 nm with an amorphous nature. CQDs<sub>1.5</sub>-ZnOVANs(bio)/FTO exhibited 2.6- and 2.7-fold enhancement in anodic current density and electroactive area (<i>A</i><sub>e</sub>), respectively, along with a 34.6% decrement in charge transfer resistance (<i>R</i><sub>p</sub>) compared to ZnOVANs(bio)/FTO. NFX monitoring at CQDs<sub>1.5</sub>-ZnOVANs(bio)/FTO took place in a two-electron and two-proton transfer process with a <i>E</i><sup>0</sup> of 1.042 V, rate constant (<i>k</i><sup>0</sup>) of 0.105 s<sup>–1</sup>, and surface coverage by NFX ions (Γ*) of 2.54 × 10<sup>–11</sup> mol cm<sup>–2</sup>. CQDs<sub>1.5</sub>-ZnOVANs(bio)/FTO exhibited a detection limit of 0.0066 μM and sensitivity of 0.1903 μA μM<sup>–1</sup> cm<sup>–2</sup> within 0.25–40 μM NFX. The developed electrode exhibited excellent stability with only 8.1% reduction in anodic peak current up to the 15th reuse cycle of the same sensing platform. The common antibiotics, including ciprofloxacin, phenylbutazone, sulfamethoxazole, chloramphenicol, chloroquine, and furazolidone, could not interfere with the NFX monitoring. CQDs<sub>1.5</sub>-ZnOVANs(bio)/FTO could effectively monitor and quantify NFX spiked in environmental samples, and the results are comparable to liquid chromatography.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 4","pages":"1659–1673"},"PeriodicalIF":4.7,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147274640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Tunneling and Ohmic Contacts in MXene/TeO2 Heterostructures by Interfacial Engineering 界面工程在MXene/TeO2异质结构中增强隧道和欧姆接触
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-04 DOI: 10.1021/acsaelm.5c02603
Shiying Guo*, , , Chen Zhuang, , , Siqi Yang, , , Han Li, , , Chengxu Ge, , , Mengke Xie, , , Jing Pan, , and , Jingguo Hu*, 

Two-dimensional (2D) van der Waals contacts between metals and semiconductors offer a promising route to mitigate Fermi-level pinning (FLP) and metal-induced gap states (MIGS) in field-effect transistors (FETs). However, the Schottky barrier and tunneling barrier seriously degrade device performance, limited by the work functions and surface properties of 2D layered metals. Herein, we propose an interfacial engineering strategy to modulate the contact properties of MXene/TeO2 heterostructures by tailoring surface terminations (–O, –F, −OH) of MXene electrodes via first-principles calculations. We demonstrate that OH-terminated MXenes form strong hydrogen bonds with TeO2, effectively narrowing the van der Waals gap and enhancing the electron tunneling probability. Notably, OH-terminated MXenes achieve n-type Ohmic contacts at both vertical and lateral interfaces. This work provides a feasible approach for designing high-performance 2D electronic devices with optimized interfacial properties.

金属和半导体之间的二维范德华接触为减轻场效应晶体管(fet)中的费米能级钉钉(FLP)和金属诱导的间隙态(MIGS)提供了一条有前途的途径。然而,受限于二维层状金属的功函数和表面特性,肖特基势垒和隧道势垒严重降低了器件性能。在此,我们提出了一种界面工程策略,通过第一性原理计算,通过调整MXene电极的表面末端(-O, -F, - OH)来调节MXene/TeO2异质结构的接触特性。我们证明了oh端MXenes与TeO2形成强氢键,有效地缩小了范德华间隙,提高了电子隧穿概率。值得注意的是,oh端接的MXenes在垂直和横向界面上都实现了n型欧姆接触。这项工作为设计具有优化界面特性的高性能二维电子器件提供了一种可行的方法。
{"title":"Enhanced Tunneling and Ohmic Contacts in MXene/TeO2 Heterostructures by Interfacial Engineering","authors":"Shiying Guo*,&nbsp;, ,&nbsp;Chen Zhuang,&nbsp;, ,&nbsp;Siqi Yang,&nbsp;, ,&nbsp;Han Li,&nbsp;, ,&nbsp;Chengxu Ge,&nbsp;, ,&nbsp;Mengke Xie,&nbsp;, ,&nbsp;Jing Pan,&nbsp;, and ,&nbsp;Jingguo Hu*,&nbsp;","doi":"10.1021/acsaelm.5c02603","DOIUrl":"https://doi.org/10.1021/acsaelm.5c02603","url":null,"abstract":"<p >Two-dimensional (2D) van der Waals contacts between metals and semiconductors offer a promising route to mitigate Fermi-level pinning (FLP) and metal-induced gap states (MIGS) in field-effect transistors (FETs). However, the Schottky barrier and tunneling barrier seriously degrade device performance, limited by the work functions and surface properties of 2D layered metals. Herein, we propose an interfacial engineering strategy to modulate the contact properties of MXene/TeO<sub>2</sub> heterostructures by tailoring surface terminations (–O, –F, −OH) of MXene electrodes via first-principles calculations. We demonstrate that OH-terminated MXenes form strong hydrogen bonds with TeO<sub>2</sub>, effectively narrowing the van der Waals gap and enhancing the electron tunneling probability. Notably, OH-terminated MXenes achieve n-type Ohmic contacts at both vertical and lateral interfaces. This work provides a feasible approach for designing high-performance 2D electronic devices with optimized interfacial properties.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"8 4","pages":"1881–1889"},"PeriodicalIF":4.7,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147274642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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ACS Applied Electronic Materials
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