Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534668
X.B. Wang, X.Y. Zhou, T. Cui, Y. Tao, H. Lin
This paper concerns the simulation of inverse synthetic aperture radar (ISAR) image for radar targets based on the shooting and bouncing ray (SBR) method. Contrary to the conventional approach where the ISAR image is obtained by inverse Fourier transforming to the scattering field, we adopt a newly-developed method [8], where the Fourier transformation has been merged into the SBR algorithm. Such a method has been improved and used in the imaging of real-size aircraft. High resolution two-dimensional ISAR images have been obtained. Hence such a method is considered as a general tool for the characterization of large and complex targets.
{"title":"High-Resolution Inverse Synthetic Aperture Radar Imaging Based on the Shooting and Bouncing Ray Method","authors":"X.B. Wang, X.Y. Zhou, T. Cui, Y. Tao, H. Lin","doi":"10.1109/GSMM.2008.4534668","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534668","url":null,"abstract":"This paper concerns the simulation of inverse synthetic aperture radar (ISAR) image for radar targets based on the shooting and bouncing ray (SBR) method. Contrary to the conventional approach where the ISAR image is obtained by inverse Fourier transforming to the scattering field, we adopt a newly-developed method [8], where the Fourier transformation has been merged into the SBR algorithm. Such a method has been improved and used in the imaging of real-size aircraft. High resolution two-dimensional ISAR images have been obtained. Hence such a method is considered as a general tool for the characterization of large and complex targets.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130179748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534616
Xiaoqiang Xie, R. Xu, Rui Diao, Weigan Lin
This paper presents a new millimeter-wave four- way power dividing/combining network, based on waveguide- microstrip E-plane dual-probe structure. With a good heat sinking property and an easy fabrication process, this compact E- plane dual-probe structure fulfills waveguide-to-microstrip transition and power dividing/combining simultaneously, and has a loss of about 0.2dB in whole Ka-band, indicated by the results of electromagnetic field simulation. Connecting these two dual- probe tri-port networks symmetrically with a waveguide E-T hybrid, a millimeter-wave four-way power dividing/combining network is fabricated, and the measured loss of 0.4dB is obtained in 32GHz-38GHz. With convenience of integrating solid-sate high power MMIC devices, this broadband low loss millimeter-wave four-way symmetric microstrip integrated power dividing/combining network can realize millimeter solid-state high power combining with a high efficiency.
{"title":"A New Millimeter-wave Multi-way Power Dividing/Combining Network Based on Waveguide-Microstrip E-plane Dual-Probe Structure","authors":"Xiaoqiang Xie, R. Xu, Rui Diao, Weigan Lin","doi":"10.1109/GSMM.2008.4534616","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534616","url":null,"abstract":"This paper presents a new millimeter-wave four- way power dividing/combining network, based on waveguide- microstrip E-plane dual-probe structure. With a good heat sinking property and an easy fabrication process, this compact E- plane dual-probe structure fulfills waveguide-to-microstrip transition and power dividing/combining simultaneously, and has a loss of about 0.2dB in whole Ka-band, indicated by the results of electromagnetic field simulation. Connecting these two dual- probe tri-port networks symmetrically with a waveguide E-T hybrid, a millimeter-wave four-way power dividing/combining network is fabricated, and the measured loss of 0.4dB is obtained in 32GHz-38GHz. With convenience of integrating solid-sate high power MMIC devices, this broadband low loss millimeter-wave four-way symmetric microstrip integrated power dividing/combining network can realize millimeter solid-state high power combining with a high efficiency.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128870321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534546
Minkyoung Kim, Sung-Dae Lee, Jae Seok Lee, N. Kwak, Sam Dong Kim, Jin-Koo Rhee
We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epi-layers were reduced.
{"title":"Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method","authors":"Minkyoung Kim, Sung-Dae Lee, Jae Seok Lee, N. Kwak, Sam Dong Kim, Jin-Koo Rhee","doi":"10.1109/GSMM.2008.4534546","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534546","url":null,"abstract":"We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epi-layers were reduced.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128965227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534599
Yuh-Jing Hwang, T. Wei, Su-Wei Chang, Ming-jye Wang, S. Shi, Ming-Tang Chen
The development on the 320-420 GHz SIS heterodyne receiver modules for the Submillimeter Array (SMA) of Taiwan is presented in this paper. This newly developed receiver band, along with the existing 250-354 GHz SIS heterodyne receivers, provides dual-polarization observation capability over 320-354 GHz, which cover important C03-2 and HCN5-4 molecular emission lines from the celestial objects. The receiver configuration, including the optics, local oscillator and the receiver cryogenic section, will be described. The measured receiver DSB noise temperature is around 70-140K. The quasi- optical beam characteristics of the receiver module also measured at selected RF frequency to ensure good optics alignment.
{"title":"320-420GHz Low-Noise Heterodyne Receiver Modules for the Submillimeter Array of Taiwan","authors":"Yuh-Jing Hwang, T. Wei, Su-Wei Chang, Ming-jye Wang, S. Shi, Ming-Tang Chen","doi":"10.1109/GSMM.2008.4534599","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534599","url":null,"abstract":"The development on the 320-420 GHz SIS heterodyne receiver modules for the Submillimeter Array (SMA) of Taiwan is presented in this paper. This newly developed receiver band, along with the existing 250-354 GHz SIS heterodyne receivers, provides dual-polarization observation capability over 320-354 GHz, which cover important C03-2 and HCN5-4 molecular emission lines from the celestial objects. The receiver configuration, including the optics, local oscillator and the receiver cryogenic section, will be described. The measured receiver DSB noise temperature is around 70-140K. The quasi- optical beam characteristics of the receiver module also measured at selected RF frequency to ensure good optics alignment.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121124991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534610
A. Kosov, V. Gotlib, V. Vald-Perlov
The ultra stable oscillator (USO) is intended for Phobos (satellite of Mars) orbit investigation. The USO instrument would be delivered to Phobos by Russian spacecraft. The USO instrument would irradiate signals at two harmonically related frequencies: 33.6 GHz and 8.8 GHz. The irradiated power would be about 1 W for each channel.
{"title":"Ultra Stable Millimeter Wave Oscillator Intended for Space Project \"Phobos - Grunt\"","authors":"A. Kosov, V. Gotlib, V. Vald-Perlov","doi":"10.1109/GSMM.2008.4534610","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534610","url":null,"abstract":"The ultra stable oscillator (USO) is intended for Phobos (satellite of Mars) orbit investigation. The USO instrument would be delivered to Phobos by Russian spacecraft. The USO instrument would irradiate signals at two harmonically related frequencies: 33.6 GHz and 8.8 GHz. The irradiated power would be about 1 W for each channel.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121429160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534624
S. Kang, S. Park, H.C. Kim, K. Chun
This paper presents the RF characteristics of the RF MEMS switch as the silicon substrate resistivity. The larger the resistivity of silicon substrate is, the larger the insertion loss of the RF MEMS switch is. When the RF MEMS switch is fabricated with the single crystalline silicon, the RF characteristics are changed by resistivity of silicon. It is necessary to study the change of RF characteristics as the substrate resistivity. The RF characteristics were simulated with different resistivity of silicon substrate. The RF MEMS switches were fabricated on each substrate with different resistivity. The RF MEMS switch was fabricated with the resistivity of 10 ohm-cm, the insertion loss of that is about 0.2 dB at 6 GHz. And the RF MEMS switch was fabricated with the resistivity of 500 Ohm-cm, the insertion loss of that is about 0.6 dB at 6 GHz.
{"title":"The RF Characteristics of the RF MEMS Switch as the Substrate Resistivity","authors":"S. Kang, S. Park, H.C. Kim, K. Chun","doi":"10.1109/GSMM.2008.4534624","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534624","url":null,"abstract":"This paper presents the RF characteristics of the RF MEMS switch as the silicon substrate resistivity. The larger the resistivity of silicon substrate is, the larger the insertion loss of the RF MEMS switch is. When the RF MEMS switch is fabricated with the single crystalline silicon, the RF characteristics are changed by resistivity of silicon. It is necessary to study the change of RF characteristics as the substrate resistivity. The RF characteristics were simulated with different resistivity of silicon substrate. The RF MEMS switches were fabricated on each substrate with different resistivity. The RF MEMS switch was fabricated with the resistivity of 10 ohm-cm, the insertion loss of that is about 0.2 dB at 6 GHz. And the RF MEMS switch was fabricated with the resistivity of 500 Ohm-cm, the insertion loss of that is about 0.6 dB at 6 GHz.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115184016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A 40-48 GHz sub-harmonic transceiver module for millimeter-wave (MMW) high data-rate communication systems has been developed in this paper. The highlights are a sub-harmonic transmitter with 12 plusmn 3 dB conversion gain, a power amplifier with 17 plusmn 2 dBm output power, a low noise amplifier with 5 plusmn 1.5 dB noise figure, and a sub-harmonic mixer with 15 plusmn 3 dB conversion loss from 40 to 48 GHz. Furthermore, two kinds of MMW high data-rate communication applications using the 40-48 GHz sub-harmonic transceiver module were demonstrated. The experimental results show that the 40-48 GHz transceiver has Gigabit transmission capability.
{"title":"40-48 GHz Sub-harmonic Transceiver for High Data-Rate Communication System Applications","authors":"Jeng‐Han Tsai, To-Po Wang, Kun-You Lin, Tian-Wei Huang, Yi-Cheng Lin, Hsin-Chia Lu, Huei Wang","doi":"10.1109/GSMM.2008.4534609","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534609","url":null,"abstract":"A 40-48 GHz sub-harmonic transceiver module for millimeter-wave (MMW) high data-rate communication systems has been developed in this paper. The highlights are a sub-harmonic transmitter with 12 plusmn 3 dB conversion gain, a power amplifier with 17 plusmn 2 dBm output power, a low noise amplifier with 5 plusmn 1.5 dB noise figure, and a sub-harmonic mixer with 15 plusmn 3 dB conversion loss from 40 to 48 GHz. Furthermore, two kinds of MMW high data-rate communication applications using the 40-48 GHz sub-harmonic transceiver module were demonstrated. The experimental results show that the 40-48 GHz transceiver has Gigabit transmission capability.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125377395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534639
Y. Gong, Y. Wei, M. Huang, G. Q. Zhao, H. Gong, Z. Duan
This paper gives a introduction to the research activities on the millimeter wave traveling wave tube (TWT) in UESTC, including some development of the novel slow wave structures, the design and experiment work of MM TWT.
{"title":"Research Activities on Millimeter Wave TWT in UESTC","authors":"Y. Gong, Y. Wei, M. Huang, G. Q. Zhao, H. Gong, Z. Duan","doi":"10.1109/GSMM.2008.4534639","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534639","url":null,"abstract":"This paper gives a introduction to the research activities on the millimeter wave traveling wave tube (TWT) in UESTC, including some development of the novel slow wave structures, the design and experiment work of MM TWT.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126708014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534605
Jin-Bo Xu, Yali Qin, Cheng-Du Ye, Y. Liu
The design of surface acoustic wave (SAW) devices are a hard work. Computer aided design is used for a huge amount of calculation quantity. The main purpose of this paper is to present a diagram of the appropriate device model design method, and analysis techniques for a SAW computer aided design system, including the design of SAW filter, the calculation method of diffraction and it compensates, the input and output of the data and diagram. The design principle of the software is the filter consisting of one apodized and one unapodized inter digital transducer (EDT). The frequency response including diffraction effects is analyzed based on delta - function model if the Fresnel and parabolic-anisotropy approximation are allowed.
{"title":"CAD modeling for the Design and Analysis of SAW Filter","authors":"Jin-Bo Xu, Yali Qin, Cheng-Du Ye, Y. Liu","doi":"10.1109/GSMM.2008.4534605","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534605","url":null,"abstract":"The design of surface acoustic wave (SAW) devices are a hard work. Computer aided design is used for a huge amount of calculation quantity. The main purpose of this paper is to present a diagram of the appropriate device model design method, and analysis techniques for a SAW computer aided design system, including the design of SAW filter, the calculation method of diffraction and it compensates, the input and output of the data and diagram. The design principle of the software is the filter consisting of one apodized and one unapodized inter digital transducer (EDT). The frequency response including diffraction effects is analyzed based on delta - function model if the Fresnel and parabolic-anisotropy approximation are allowed.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121605681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534543
Min Han, S. Moon, Jung-hun Oh, B. Lim, T. Baek, S. Choi, Y. Baek, Y. Chae, Hyun‐Chang Park, Sam-Dong Kim, J. Rhee
In this paper, millimeter-wave 94 GHz drive amplifiers based on metamorphic high electron mobility transistors (MHEMTs) were designed and fabricated. The fabricated 100 nm gate length MHEMT devices exhibit DC characteristics with a drain current density of 690 mA/mm and an extrinsic transconductance of 770mS/mm. The current gain cutoff frequency (fT) and the maximum oscillation frequency (fmax) are 185 GHz and 230 GHz, respectively. The matching circuit of amplifier was designed using CPW (coplanar wave-guide) transmission line. The fabricated amplifier shows a good S21 gain of 7.79 dB, an input return loss (S11) of -16.5 dB and an output return loss (S22) of-15.9 dB.
{"title":"Two-Stage 94 GHz drive Amplifiers Using 0.1-μm Metamorphic HEMT Technology","authors":"Min Han, S. Moon, Jung-hun Oh, B. Lim, T. Baek, S. Choi, Y. Baek, Y. Chae, Hyun‐Chang Park, Sam-Dong Kim, J. Rhee","doi":"10.1109/GSMM.2008.4534543","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534543","url":null,"abstract":"In this paper, millimeter-wave 94 GHz drive amplifiers based on metamorphic high electron mobility transistors (MHEMTs) were designed and fabricated. The fabricated 100 nm gate length MHEMT devices exhibit DC characteristics with a drain current density of 690 mA/mm and an extrinsic transconductance of 770mS/mm. The current gain cutoff frequency (fT) and the maximum oscillation frequency (fmax) are 185 GHz and 230 GHz, respectively. The matching circuit of amplifier was designed using CPW (coplanar wave-guide) transmission line. The fabricated amplifier shows a good S21 gain of 7.79 dB, an input return loss (S11) of -16.5 dB and an output return loss (S22) of-15.9 dB.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122083229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：