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2008 Global Symposium on Millimeter Waves最新文献

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Notice of RetractionNear Range Millimeter Wave Radiometer Passive Image High Resolution Restoration 关于近距离毫米波辐射计无源图像高分辨率恢复的通知
Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534635
Wang Ben-qing, Li Xing-guo
Since a millimeter wave (MMW) image is lower resolution and higher noise than optical, it appears particularly important to restore high resolution MMW image, on which many works have been done. However there is rare report on scanning image restoration technology under near range conditions. Change of antenna characteristics is main factor to affect image quality in near range, for example, the antenna pattern mainlobe emerges fluctuation and the gain is greatly reduced. In addition, scanning movement of servomechanism is another important factor to affect imaging quality. This paper firstly estimates point spread function (PSF) of scanning prototype to establish blurred model, and then takes estimated PSF as initial value into restoration algorithm that combines maximum likelihood (ML) estimation and blind deconvolution techniques, resumes restoration of hidden target MMW images. Simulations show that the combined restoration algorithm is better in effect and convergence.
由于毫米波图像比光学图像分辨率低、噪声大,因此如何恢复高分辨率毫米波图像显得尤为重要,目前已经开展了大量的研究工作。然而,近距离条件下扫描图像恢复技术的研究鲜有报道。天线特性的变化是影响近距离成像质量的主要因素,如天线方向图主瓣出现波动,增益大大降低。此外,伺服机构的扫描运动是影响成像质量的另一个重要因素。本文首先对扫描原型的点扩散函数(PSF)进行估计,建立模糊模型,然后将估计的PSF作为初始值加入到最大似然估计和盲反卷积相结合的恢复算法中,恢复对隐藏目标毫米波图像的恢复。仿真结果表明,组合恢复算法具有较好的效果和收敛性。
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引用次数: 3
A 6-30 GHz Compact 3-bit Digital Attenuator MMIC using InP/InGaAs PIN Diodes 采用InP/InGaAs PIN二极管的6- 30ghz紧凑型3位数字衰减器MMIC
Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534569
Hyunchul Eom, Sejun Han, Kyounghoon Yang
A broadband (6-30 GHz) 3-bit digital attenuator MMIC using InP/InGaAs PIN Diodes has been proposed and fabricated. The proposed digital attenuator is composed of Pi- resistive networks for non-reflective step attenuation and fabricated by using a benzocyclobutene(BCB)-based multi-layer MMIC technology. By using the InP/InGaAs PIN diodes having a high cutoff frequency for digital switching, the proposed digital attenuator has shown the low insertion loss and excellent return loss characteristics. The 3-bit digital attenuator has a 3 dB attenuation step and a 21 dB attenuation range. The minimum insertion loss is 4 dB and the input/output return loss is greater than 10 dB over all attenuation states and frequencies. The chip size is 1.47times0.99 mm2.
提出并制作了一种采用InP/InGaAs PIN二极管的宽带(6- 30ghz) 3位数字衰减器MMIC。该数字衰减器由非反射阶跃衰减的π电阻网络组成,采用基于苯并环丁烯(BCB)的多层MMIC技术制作。采用具有高截止频率的InP/InGaAs PIN二极管进行数字开关,所提出的数字衰减器具有低插入损耗和优异的回波损耗特性。3位数字衰减器具有3 dB衰减步长和21 dB衰减范围。在所有衰减状态和频率下,最小插入损耗为4db,输入/输出回波损耗大于10db。芯片尺寸为1.47 × 0.99 mm2。
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引用次数: 3
The Design of an Iris Waveguide Filter at 35.75 GHz 35.75 GHz光圈波导滤波器的设计
Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534642
Yanfen Zhai, Qingyuan Wang, Zheyu Wang, X. X. Gao
The design steps of a millimeter waveguide filter will be presented. A sample filter at 35.75 GHz will be designed as an example to show how to use the formulae. Tested results from the sample filter will be presented.
介绍了毫米波波导滤波器的设计步骤。本文将设计一个35.75 GHz的采样滤波器作为示例,以演示如何使用该公式。将展示样品过滤器的测试结果。
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引用次数: 13
Differentially Fed Rectangular Dielectric Resonator Antenna 差分馈电矩形介质谐振器天线
Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534585
B. Li, K. Leung, X. Sheng
A differentially fed rectangular dielectric resonator antenna (DRA) is studied using the finite-difference time-domain (FDTD) method. The fundamental TEm mode of the rectangular DRA is excited at 2.4 GHz, with a 10-dB differential impedance bandwidth (|Sdd11| < -10 dB) of ~ 10.4%. To verify the theory, measurements were carried out, and reasonable agreement between theory and experiment is obtained. The effects of the magnitude and phase imbalances on the DRA impedance and radiation pattern are investigated.
采用时域有限差分(FDTD)方法对差分馈电矩形介质谐振器天线进行了研究。矩形DRA的基频TEm模式在2.4 GHz激发,10 dB差分阻抗带宽(|Sdd11| < -10 dB)为~ 10.4%。为了验证理论,进行了测量,得到了理论与实验的合理吻合。研究了幅值和相位不平衡对DRA阻抗和辐射方向图的影响。
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引用次数: 26
Analysis of Second-Order LTCC Bandpass Filter with Two Finite Transmission Zeros 具有两个有限传输零点的二阶LTCC带通滤波器分析
Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534550
Zhirui Zong, Yali Qin, F. Zhu, Yu-jie Zhao
The paper proposes a new Low-temperature co-fired ceramic (LTCC) bandpass filter, which can be used to provide two finite transmission zeros in the lower stopband. The coupled electromagnet of the two stepped-impedance resonators (SIRs) is improved by adding a coupling pad. A feedback capacitor between input and output is also used to realize transmission zero. An equivalent lumped circuit is derived to explain the behaviors of the two finite transmission zeros .This filter operates at 2.45 GHz and has a compact size of 2.5 mm times 2.0 mm times 0.9 mm,which is widely used in Bluetooth wireless LAN transceiver system.
本文提出了一种新型低温共烧陶瓷(LTCC)带通滤波器,它可以在下阻带提供两个有限传输零点。通过在两个阶跃阻抗谐振器(SIRs)中增加耦合垫,改善了耦合电磁铁的性能。输入和输出之间的反馈电容也用于实现传输零。该滤波器工作频率为2.45 GHz,具有2.5 mm × 2.0 mm × 0.9 mm的紧凑尺寸,广泛应用于蓝牙无线局域网收发器系统中。
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引用次数: 5
A Millimeter-Wave Communication Experiment Incorporating with a Superconducting SIS Receiver 结合超导SIS接收机的毫米波通信实验
Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534563
Wei-Ming Chen, Xiao Shen, Shan-huai Chen, Zhenhui Lin, Jing Li, S. Shi
The first demonstration has been made of a millimeter-wave communication system based on a 100-GHz superconducting SIS (superconductor-insulator-superconductor) receiver. The SIS receiver has an intermediate frequency (IF) band of 1.1-1.7 GHz and an equivalent input noise temperature of about 300 K, while the transmitter is a 93-GHz varactor-tunable Gunn oscillator with its output frequency modulated via an 11-MHz signal source. In addition, results of two analog FM demodulation techniques were compared in this experiment.
基于100 ghz超导SIS(超导体-绝缘体-超导体)接收器的毫米波通信系统的首次演示已经完成。SIS接收机的中频(IF)频段为1.1-1.7 GHz,等效输入噪声温度约为300 K,而发射器是一个93 GHz的变容可调谐Gunn振荡器,其输出频率通过一个11 mhz的信号源调制。此外,本实验还比较了两种模拟调频解调技术的结果。
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引用次数: 0
A Switched Array Antenna Module for Millimeter-Wave Wireless Communications 一种用于毫米波无线通信的开关阵列天线模块
Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534586
Jeong Ho Lee, Seungpyo Hong, Won Ki Kim, Jae We An, M. Park
This letter presents a switched array antenna module for wireless communications in the 60 GHz band. The array antenna module is composed of four pyramidal horns and four MMIC switches. For connections between the horns and the MMIC switches, a transition block from a waveguide to a microstrip line is developed with a loss of around 0.43 dB. Each horn antenna has a measured gain of 15.3 dBi and the HPBW is 30.6deg in the E-plane and 30.7deg in the H-plane, respectively. The switched array antenna module can cover 120 degrees with a proper switch setting. The antenna module can be used for multi- Gbps wireless data transmissions in the 60 GHz band where the radio link tends to be easily disconnected because of weak diffraction effect. If an obstacle between a transmitter and a receiver antenna blocks currently active signal path, another antenna path is selected for better signal strength which can be line-of-sight (LOS) or non-line-of-sight (NLOS) depending on the environment. In the NLOS case, the radio link can be maintained using reflected signals.
本文介绍了一种用于60ghz频段无线通信的交换阵列天线模块。阵列天线模块由4个锥体喇叭和4个MMIC开关组成。对于喇叭和MMIC开关之间的连接,开发了从波导到微带线的过渡块,损耗约为0.43 dB。每个喇叭天线的测量增益为15.3 dBi,在e平面和h平面的HPBW分别为30.6度和30.7度。通过适当的开关设置,开关阵列天线模块可以覆盖120度。该天线模块可用于60 GHz频段的多Gbps无线数据传输,该频段由于衍射效应较弱,无线电链路容易断开。如果发射器和接收器天线之间的障碍物阻挡了当前有效的信号路径,则根据环境选择另一条天线路径以获得更好的信号强度,该路径可以是视距(LOS)或非视距(NLOS)。在NLOS的情况下,无线电链路可以使用反射信号来维持。
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引用次数: 16
Design of a Band-Notched UWB Monopole Using Genetic Algorithm Combined with FDTD 用遗传算法结合时域有限差分法设计带陷波超宽带单极子
Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534619
Xue-xia Yang, J. Sheng
The micro-genetic algorithm (MGA) optimization combined with the finite-difference time-domain (FDTD) method is applied to design a band-notched ultra wide-band (UWB) antenna in this article. A U-type slot on a stepped U-type UWB monopole is used to obtain the band-notched characteristic for 5 GHz WLAN band. The measured VSWR less than 2 covers the operating band of 3.1-10.6 GHz and VSWR more than 2 is within the notched band of 5.15-5.825 GHz with the highest value of 5.6. The measured patterns and the simulated gain show that the antenna can be applied in various UWB communication systems.
本文将微遗传算法(MGA)优化与时域有限差分(FDTD)方法相结合,设计了一种带陷波超宽带(UWB)天线。在阶梯u型UWB单极子上使用u型槽来获得5ghz频段的带陷波特性。测量到的驻波比小于2的覆盖3.1 ~ 10.6 GHz的工作频段,大于2的驻波比在5.15 ~ 5.825 GHz的陷波频段内,最高值为5.6。测量方向图和仿真增益表明,该天线可以应用于各种超宽带通信系统。
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引用次数: 2
Millimeter-wave Broadband Amplifier using MHEMT MHEMT毫米波宽带放大器
Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534554
Yong-Hyun Baek, Sang Jin Lee, T. Baek, Jung-hun Oh, S. Choi, D. Kang, Sam-Dong Kim, J. Rhee
In this paper, millimeter-wave broadband cascode amplifiers were designed and fabricated. The 0.1 mum InGaAs/InAlAs/GaAs MHEMT (metamorphic high electron mobility transistor) was fabricated for the cascode amplifier. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 688 mS/mm of maximum transconductance. The current gain cut-off frequency (fT) is 139 GHz and the maximum oscillation frequency (fmax) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (coplanar wave guide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the standard MHEMT MMIC (millimeter-wave monolithic IC) process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz from 20.76 to 71.13 GHz. Also, the amplifier represents the S21 gain with the average 7.07 dB in bandwidth and the maximum gain of 10.3 dB at 30 GHz.
本文设计并制作了毫米波宽带级联码放大器。制备了用于级联放大器的0.1 μ m InGaAs/InAlAs/GaAs高电子迁移率晶体管(MHEMT)。MHEMT的直流特性为漏极电流密度670 mA/mm,最大跨导688 mS/mm。电流增益截止频率(fT)为139 GHz,最大振荡频率(fmax)为266 GHz。为了防止所设计的级联放大器的振荡,在共栅器件的漏极处连接并联电阻和电容。利用共面波导传输线设计并匹配了级联放大器的宽带特性。设计的放大器采用本研究开发的标准毫米波单片集成电路(MHEMT MMIC)工艺制作。测量结果表明,该放大器在20.76 ~ 71.13 GHz范围内获得了50.37 GHz的3db带宽。此外,放大器代表S21增益,平均带宽为7.07 dB, 30 GHz时最大增益为10.3 dB。
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引用次数: 1
Design Techniques and Modeling for 60GHz Applications With a 65nm-CMOS-RF Technology 基于65nm cmos - rf技术的60GHz应用的设计技术和建模
Pub Date : 2008-04-21 DOI: 10.1109/GSMM.2008.4534611
S. Aloui, E. Kerhervé, D. Belot, R. Plana
To exploit the unlicensed band at frequencies around 60 GHz, a certain number of design rules is considered. This paper highlights the difficulties to design a millimeter CMOS power amplifier (PA). A model of a compact inductor and interconnect lines is detailed. This model takes into account substrate and resistive parasitic. A 65 nm CMOS technology from STMicroelectronics has been used. Innovative techniques are implemented in the design of a power amplifier (PA) which is optimized to deliver the maximum linear output power. To obtain good performances in a small surface of silicon, it has been designed, with both lumped and distributed elements. The PA delivers a linear output power of 8.9 dBm with just an area of 0.48 mm*0.6 mm including pads.
为了利用60 GHz左右的未授权频段,需要考虑一定数量的设计规则。本文重点介绍了毫米级CMOS功率放大器的设计难点。详细介绍了紧凑型电感器和互连线的模型。该模型考虑了衬底和电阻寄生。采用意法半导体的65纳米CMOS技术。在功率放大器(PA)的设计中实施了创新技术,该放大器经过优化以提供最大的线性输出功率。为了在硅的小表面上获得良好的性能,设计了集总元件和分布元件。放大器的线性输出功率为8.9 dBm,面积为0.48 mm*0.6 mm(含焊盘)。
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引用次数: 1
期刊
2008 Global Symposium on Millimeter Waves
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