Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534635
Wang Ben-qing, Li Xing-guo
Since a millimeter wave (MMW) image is lower resolution and higher noise than optical, it appears particularly important to restore high resolution MMW image, on which many works have been done. However there is rare report on scanning image restoration technology under near range conditions. Change of antenna characteristics is main factor to affect image quality in near range, for example, the antenna pattern mainlobe emerges fluctuation and the gain is greatly reduced. In addition, scanning movement of servomechanism is another important factor to affect imaging quality. This paper firstly estimates point spread function (PSF) of scanning prototype to establish blurred model, and then takes estimated PSF as initial value into restoration algorithm that combines maximum likelihood (ML) estimation and blind deconvolution techniques, resumes restoration of hidden target MMW images. Simulations show that the combined restoration algorithm is better in effect and convergence.
{"title":"Notice of RetractionNear Range Millimeter Wave Radiometer Passive Image High Resolution Restoration","authors":"Wang Ben-qing, Li Xing-guo","doi":"10.1109/GSMM.2008.4534635","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534635","url":null,"abstract":"Since a millimeter wave (MMW) image is lower resolution and higher noise than optical, it appears particularly important to restore high resolution MMW image, on which many works have been done. However there is rare report on scanning image restoration technology under near range conditions. Change of antenna characteristics is main factor to affect image quality in near range, for example, the antenna pattern mainlobe emerges fluctuation and the gain is greatly reduced. In addition, scanning movement of servomechanism is another important factor to affect imaging quality. This paper firstly estimates point spread function (PSF) of scanning prototype to establish blurred model, and then takes estimated PSF as initial value into restoration algorithm that combines maximum likelihood (ML) estimation and blind deconvolution techniques, resumes restoration of hidden target MMW images. Simulations show that the combined restoration algorithm is better in effect and convergence.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114961298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534569
Hyunchul Eom, Sejun Han, Kyounghoon Yang
A broadband (6-30 GHz) 3-bit digital attenuator MMIC using InP/InGaAs PIN Diodes has been proposed and fabricated. The proposed digital attenuator is composed of Pi- resistive networks for non-reflective step attenuation and fabricated by using a benzocyclobutene(BCB)-based multi-layer MMIC technology. By using the InP/InGaAs PIN diodes having a high cutoff frequency for digital switching, the proposed digital attenuator has shown the low insertion loss and excellent return loss characteristics. The 3-bit digital attenuator has a 3 dB attenuation step and a 21 dB attenuation range. The minimum insertion loss is 4 dB and the input/output return loss is greater than 10 dB over all attenuation states and frequencies. The chip size is 1.47times0.99 mm2.
{"title":"A 6-30 GHz Compact 3-bit Digital Attenuator MMIC using InP/InGaAs PIN Diodes","authors":"Hyunchul Eom, Sejun Han, Kyounghoon Yang","doi":"10.1109/GSMM.2008.4534569","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534569","url":null,"abstract":"A broadband (6-30 GHz) 3-bit digital attenuator MMIC using InP/InGaAs PIN Diodes has been proposed and fabricated. The proposed digital attenuator is composed of Pi- resistive networks for non-reflective step attenuation and fabricated by using a benzocyclobutene(BCB)-based multi-layer MMIC technology. By using the InP/InGaAs PIN diodes having a high cutoff frequency for digital switching, the proposed digital attenuator has shown the low insertion loss and excellent return loss characteristics. The 3-bit digital attenuator has a 3 dB attenuation step and a 21 dB attenuation range. The minimum insertion loss is 4 dB and the input/output return loss is greater than 10 dB over all attenuation states and frequencies. The chip size is 1.47times0.99 mm2.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127681569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534642
Yanfen Zhai, Qingyuan Wang, Zheyu Wang, X. X. Gao
The design steps of a millimeter waveguide filter will be presented. A sample filter at 35.75 GHz will be designed as an example to show how to use the formulae. Tested results from the sample filter will be presented.
{"title":"The Design of an Iris Waveguide Filter at 35.75 GHz","authors":"Yanfen Zhai, Qingyuan Wang, Zheyu Wang, X. X. Gao","doi":"10.1109/GSMM.2008.4534642","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534642","url":null,"abstract":"The design steps of a millimeter waveguide filter will be presented. A sample filter at 35.75 GHz will be designed as an example to show how to use the formulae. Tested results from the sample filter will be presented.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130024022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534585
B. Li, K. Leung, X. Sheng
A differentially fed rectangular dielectric resonator antenna (DRA) is studied using the finite-difference time-domain (FDTD) method. The fundamental TEm mode of the rectangular DRA is excited at 2.4 GHz, with a 10-dB differential impedance bandwidth (|Sdd11| < -10 dB) of ~ 10.4%. To verify the theory, measurements were carried out, and reasonable agreement between theory and experiment is obtained. The effects of the magnitude and phase imbalances on the DRA impedance and radiation pattern are investigated.
{"title":"Differentially Fed Rectangular Dielectric Resonator Antenna","authors":"B. Li, K. Leung, X. Sheng","doi":"10.1109/GSMM.2008.4534585","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534585","url":null,"abstract":"A differentially fed rectangular dielectric resonator antenna (DRA) is studied using the finite-difference time-domain (FDTD) method. The fundamental TEm mode of the rectangular DRA is excited at 2.4 GHz, with a 10-dB differential impedance bandwidth (|Sdd11| < -10 dB) of ~ 10.4%. To verify the theory, measurements were carried out, and reasonable agreement between theory and experiment is obtained. The effects of the magnitude and phase imbalances on the DRA impedance and radiation pattern are investigated.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127845083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534550
Zhirui Zong, Yali Qin, F. Zhu, Yu-jie Zhao
The paper proposes a new Low-temperature co-fired ceramic (LTCC) bandpass filter, which can be used to provide two finite transmission zeros in the lower stopband. The coupled electromagnet of the two stepped-impedance resonators (SIRs) is improved by adding a coupling pad. A feedback capacitor between input and output is also used to realize transmission zero. An equivalent lumped circuit is derived to explain the behaviors of the two finite transmission zeros .This filter operates at 2.45 GHz and has a compact size of 2.5 mm times 2.0 mm times 0.9 mm,which is widely used in Bluetooth wireless LAN transceiver system.
本文提出了一种新型低温共烧陶瓷(LTCC)带通滤波器，它可以在下阻带提供两个有限传输零点。通过在两个阶跃阻抗谐振器(SIRs)中增加耦合垫，改善了耦合电磁铁的性能。输入和输出之间的反馈电容也用于实现传输零。该滤波器工作频率为2.45 GHz，具有2.5 mm × 2.0 mm × 0.9 mm的紧凑尺寸，广泛应用于蓝牙无线局域网收发器系统中。
{"title":"Analysis of Second-Order LTCC Bandpass Filter with Two Finite Transmission Zeros","authors":"Zhirui Zong, Yali Qin, F. Zhu, Yu-jie Zhao","doi":"10.1109/GSMM.2008.4534550","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534550","url":null,"abstract":"The paper proposes a new Low-temperature co-fired ceramic (LTCC) bandpass filter, which can be used to provide two finite transmission zeros in the lower stopband. The coupled electromagnet of the two stepped-impedance resonators (SIRs) is improved by adding a coupling pad. A feedback capacitor between input and output is also used to realize transmission zero. An equivalent lumped circuit is derived to explain the behaviors of the two finite transmission zeros .This filter operates at 2.45 GHz and has a compact size of 2.5 mm times 2.0 mm times 0.9 mm,which is widely used in Bluetooth wireless LAN transceiver system.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127892141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534563
Wei-Ming Chen, Xiao Shen, Shan-huai Chen, Zhenhui Lin, Jing Li, S. Shi
The first demonstration has been made of a millimeter-wave communication system based on a 100-GHz superconducting SIS (superconductor-insulator-superconductor) receiver. The SIS receiver has an intermediate frequency (IF) band of 1.1-1.7 GHz and an equivalent input noise temperature of about 300 K, while the transmitter is a 93-GHz varactor-tunable Gunn oscillator with its output frequency modulated via an 11-MHz signal source. In addition, results of two analog FM demodulation techniques were compared in this experiment.
{"title":"A Millimeter-Wave Communication Experiment Incorporating with a Superconducting SIS Receiver","authors":"Wei-Ming Chen, Xiao Shen, Shan-huai Chen, Zhenhui Lin, Jing Li, S. Shi","doi":"10.1109/GSMM.2008.4534563","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534563","url":null,"abstract":"The first demonstration has been made of a millimeter-wave communication system based on a 100-GHz superconducting SIS (superconductor-insulator-superconductor) receiver. The SIS receiver has an intermediate frequency (IF) band of 1.1-1.7 GHz and an equivalent input noise temperature of about 300 K, while the transmitter is a 93-GHz varactor-tunable Gunn oscillator with its output frequency modulated via an 11-MHz signal source. In addition, results of two analog FM demodulation techniques were compared in this experiment.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"315 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116336039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534586
Jeong Ho Lee, Seungpyo Hong, Won Ki Kim, Jae We An, M. Park
This letter presents a switched array antenna module for wireless communications in the 60 GHz band. The array antenna module is composed of four pyramidal horns and four MMIC switches. For connections between the horns and the MMIC switches, a transition block from a waveguide to a microstrip line is developed with a loss of around 0.43 dB. Each horn antenna has a measured gain of 15.3 dBi and the HPBW is 30.6deg in the E-plane and 30.7deg in the H-plane, respectively. The switched array antenna module can cover 120 degrees with a proper switch setting. The antenna module can be used for multi- Gbps wireless data transmissions in the 60 GHz band where the radio link tends to be easily disconnected because of weak diffraction effect. If an obstacle between a transmitter and a receiver antenna blocks currently active signal path, another antenna path is selected for better signal strength which can be line-of-sight (LOS) or non-line-of-sight (NLOS) depending on the environment. In the NLOS case, the radio link can be maintained using reflected signals.
{"title":"A Switched Array Antenna Module for Millimeter-Wave Wireless Communications","authors":"Jeong Ho Lee, Seungpyo Hong, Won Ki Kim, Jae We An, M. Park","doi":"10.1109/GSMM.2008.4534586","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534586","url":null,"abstract":"This letter presents a switched array antenna module for wireless communications in the 60 GHz band. The array antenna module is composed of four pyramidal horns and four MMIC switches. For connections between the horns and the MMIC switches, a transition block from a waveguide to a microstrip line is developed with a loss of around 0.43 dB. Each horn antenna has a measured gain of 15.3 dBi and the HPBW is 30.6deg in the E-plane and 30.7deg in the H-plane, respectively. The switched array antenna module can cover 120 degrees with a proper switch setting. The antenna module can be used for multi- Gbps wireless data transmissions in the 60 GHz band where the radio link tends to be easily disconnected because of weak diffraction effect. If an obstacle between a transmitter and a receiver antenna blocks currently active signal path, another antenna path is selected for better signal strength which can be line-of-sight (LOS) or non-line-of-sight (NLOS) depending on the environment. In the NLOS case, the radio link can be maintained using reflected signals.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134274212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534619
Xue-xia Yang, J. Sheng
The micro-genetic algorithm (MGA) optimization combined with the finite-difference time-domain (FDTD) method is applied to design a band-notched ultra wide-band (UWB) antenna in this article. A U-type slot on a stepped U-type UWB monopole is used to obtain the band-notched characteristic for 5 GHz WLAN band. The measured VSWR less than 2 covers the operating band of 3.1-10.6 GHz and VSWR more than 2 is within the notched band of 5.15-5.825 GHz with the highest value of 5.6. The measured patterns and the simulated gain show that the antenna can be applied in various UWB communication systems.
{"title":"Design of a Band-Notched UWB Monopole Using Genetic Algorithm Combined with FDTD","authors":"Xue-xia Yang, J. Sheng","doi":"10.1109/GSMM.2008.4534619","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534619","url":null,"abstract":"The micro-genetic algorithm (MGA) optimization combined with the finite-difference time-domain (FDTD) method is applied to design a band-notched ultra wide-band (UWB) antenna in this article. A U-type slot on a stepped U-type UWB monopole is used to obtain the band-notched characteristic for 5 GHz WLAN band. The measured VSWR less than 2 covers the operating band of 3.1-10.6 GHz and VSWR more than 2 is within the notched band of 5.15-5.825 GHz with the highest value of 5.6. The measured patterns and the simulated gain show that the antenna can be applied in various UWB communication systems.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115135543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534554
Yong-Hyun Baek, Sang Jin Lee, T. Baek, Jung-hun Oh, S. Choi, D. Kang, Sam-Dong Kim, J. Rhee
In this paper, millimeter-wave broadband cascode amplifiers were designed and fabricated. The 0.1 mum InGaAs/InAlAs/GaAs MHEMT (metamorphic high electron mobility transistor) was fabricated for the cascode amplifier. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 688 mS/mm of maximum transconductance. The current gain cut-off frequency (fT) is 139 GHz and the maximum oscillation frequency (fmax) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (coplanar wave guide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the standard MHEMT MMIC (millimeter-wave monolithic IC) process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz from 20.76 to 71.13 GHz. Also, the amplifier represents the S21 gain with the average 7.07 dB in bandwidth and the maximum gain of 10.3 dB at 30 GHz.
{"title":"Millimeter-wave Broadband Amplifier using MHEMT","authors":"Yong-Hyun Baek, Sang Jin Lee, T. Baek, Jung-hun Oh, S. Choi, D. Kang, Sam-Dong Kim, J. Rhee","doi":"10.1109/GSMM.2008.4534554","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534554","url":null,"abstract":"In this paper, millimeter-wave broadband cascode amplifiers were designed and fabricated. The 0.1 mum InGaAs/InAlAs/GaAs MHEMT (metamorphic high electron mobility transistor) was fabricated for the cascode amplifier. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 688 mS/mm of maximum transconductance. The current gain cut-off frequency (fT) is 139 GHz and the maximum oscillation frequency (fmax) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (coplanar wave guide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the standard MHEMT MMIC (millimeter-wave monolithic IC) process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz from 20.76 to 71.13 GHz. Also, the amplifier represents the S21 gain with the average 7.07 dB in bandwidth and the maximum gain of 10.3 dB at 30 GHz.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115500394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534611
S. Aloui, E. Kerhervé, D. Belot, R. Plana
To exploit the unlicensed band at frequencies around 60 GHz, a certain number of design rules is considered. This paper highlights the difficulties to design a millimeter CMOS power amplifier (PA). A model of a compact inductor and interconnect lines is detailed. This model takes into account substrate and resistive parasitic. A 65 nm CMOS technology from STMicroelectronics has been used. Innovative techniques are implemented in the design of a power amplifier (PA) which is optimized to deliver the maximum linear output power. To obtain good performances in a small surface of silicon, it has been designed, with both lumped and distributed elements. The PA delivers a linear output power of 8.9 dBm with just an area of 0.48 mm*0.6 mm including pads.
{"title":"Design Techniques and Modeling for 60GHz Applications With a 65nm-CMOS-RF Technology","authors":"S. Aloui, E. Kerhervé, D. Belot, R. Plana","doi":"10.1109/GSMM.2008.4534611","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534611","url":null,"abstract":"To exploit the unlicensed band at frequencies around 60 GHz, a certain number of design rules is considered. This paper highlights the difficulties to design a millimeter CMOS power amplifier (PA). A model of a compact inductor and interconnect lines is detailed. This model takes into account substrate and resistive parasitic. A 65 nm CMOS technology from STMicroelectronics has been used. Innovative techniques are implemented in the design of a power amplifier (PA) which is optimized to deliver the maximum linear output power. To obtain good performances in a small surface of silicon, it has been designed, with both lumped and distributed elements. The PA delivers a linear output power of 8.9 dBm with just an area of 0.48 mm*0.6 mm including pads.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123891374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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