Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534603
Yu Li-yang, Gao Mingyu, Lu Jie
In order to make use of waste vibration energy from running car, research on the piezoelectric vibrating device has caught more attention. The cantilever support piezoelectric vibrating device that can output more power attracts more attention to it. It has been introduced that the effect of the length and thickness for the output voltage and charge, and however the effect of the width for the output voltage and charge is rarely researched, especially when there is an identical force at free boundary. In the paper, the curved theory of vibration and piezoelectric relevance knowledge is used to analyze the piezoelectric vibrator. The analyses have shown that the voltage and charge reduce with the width of piezoelectric vibrating device. Experiments verify the analysis.
{"title":"Research the dependence of output voltage and charge on the width of Piezoelectric vibrating device","authors":"Yu Li-yang, Gao Mingyu, Lu Jie","doi":"10.1109/GSMM.2008.4534603","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534603","url":null,"abstract":"In order to make use of waste vibration energy from running car, research on the piezoelectric vibrating device has caught more attention. The cantilever support piezoelectric vibrating device that can output more power attracts more attention to it. It has been introduced that the effect of the length and thickness for the output voltage and charge, and however the effect of the width for the output voltage and charge is rarely researched, especially when there is an identical force at free boundary. In the paper, the curved theory of vibration and piezoelectric relevance knowledge is used to analyze the piezoelectric vibrator. The analyses have shown that the voltage and charge reduce with the width of piezoelectric vibrating device. Experiments verify the analysis.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122339939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534553
D. Ko, Mun-Kyo Lee, Sang Jin Lee, S. Moon, D. Ko, S. Bang, Yong-Hyun Baek, Min Han, S. Choi, T. Baek, Dong-Chul Park, Sam-Dong Kim, J. Rhee
In this paper, we designed and fabricated waveguide voltage controlled oscillator (VCO), which have a center frequency of 94 GHz using the GaAs Gunn diode, varactor diode, and two bias posts with low pass filter (LPF). The cavity is designed for fundamental mode at 47 GHz and operated second harmonic VCO of 94 GHz center frequency. The fabricated VCO has 1.74 GHz bandwidth, 671 MHz linearity for 2.28% and 14 dBm output power. The highest output power is 15.58 dBm at 94.38 GHz.
{"title":"94 GHz Waveguide VCO for FMCW radar","authors":"D. Ko, Mun-Kyo Lee, Sang Jin Lee, S. Moon, D. Ko, S. Bang, Yong-Hyun Baek, Min Han, S. Choi, T. Baek, Dong-Chul Park, Sam-Dong Kim, J. Rhee","doi":"10.1109/GSMM.2008.4534553","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534553","url":null,"abstract":"In this paper, we designed and fabricated waveguide voltage controlled oscillator (VCO), which have a center frequency of 94 GHz using the GaAs Gunn diode, varactor diode, and two bias posts with low pass filter (LPF). The cavity is designed for fundamental mode at 47 GHz and operated second harmonic VCO of 94 GHz center frequency. The fabricated VCO has 1.74 GHz bandwidth, 671 MHz linearity for 2.28% and 14 dBm output power. The highest output power is 15.58 dBm at 94.38 GHz.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"66 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114049918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534653
H. Meng, W. Dou, K. Yin
In this paper, a Cassegrain monopulse antenna covered with a multilayered Von Karman radome at millimeter wave band is analyzed. The electrically large Cassegrain antenna with the aperture diameter about 38lambda0 is analyzed using ray tracing (RT) method and the radome with the length of 232lambda0 and base diameter of 82lambda0 is analyzed using aperture integration -surface integration (AI-SI) method. The curvature radius of the radome and the lateral transmission in the radome dielectric are considered in the analysis.
{"title":"Analysis of Antenna-Radome System at Millimeter Wave Band","authors":"H. Meng, W. Dou, K. Yin","doi":"10.1109/GSMM.2008.4534653","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534653","url":null,"abstract":"In this paper, a Cassegrain monopulse antenna covered with a multilayered Von Karman radome at millimeter wave band is analyzed. The electrically large Cassegrain antenna with the aperture diameter about 38lambda0 is analyzed using ray tracing (RT) method and the radome with the length of 232lambda0 and base diameter of 82lambda0 is analyzed using aperture integration -surface integration (AI-SI) method. The curvature radius of the radome and the lateral transmission in the radome dielectric are considered in the analysis.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125245182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534641
A. Kasbari, A. Ouslimani, S. Blayac, A. Konczykowska
An improved design method for high speed bipolar circuits is presented. It uses iso base-collector capacitance curves superposed to the duty cycles plots in the (Ic,Vce) plane. This new optimization way gives the optimum operating region for each transistor of a bipolar circuit to reach the best trade-off between the switching speed and the power consumption. Electrical design of emitter-coupled pair, which constitutes the basis of emitter-coupled logic (ECL) circuits, is detailed to explain the design method. Each part of the measurement set-up is characterized in time and frequency domains to improve the measurement method. These improvements have enabled the design and characterization of InP double-heterojunction-bipolar transistor master-slave D-type flip-flop circuits. 40 Gb/s measurement with more than 85% eye-diagram opening validates this method.
{"title":"Improved Design and Characterization Method for Very High Speed Bipolar Circuits","authors":"A. Kasbari, A. Ouslimani, S. Blayac, A. Konczykowska","doi":"10.1109/GSMM.2008.4534641","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534641","url":null,"abstract":"An improved design method for high speed bipolar circuits is presented. It uses iso base-collector capacitance curves superposed to the duty cycles plots in the (Ic,Vce) plane. This new optimization way gives the optimum operating region for each transistor of a bipolar circuit to reach the best trade-off between the switching speed and the power consumption. Electrical design of emitter-coupled pair, which constitutes the basis of emitter-coupled logic (ECL) circuits, is detailed to explain the design method. Each part of the measurement set-up is characterized in time and frequency domains to improve the measurement method. These improvements have enabled the design and characterization of InP double-heterojunction-bipolar transistor master-slave D-type flip-flop circuits. 40 Gb/s measurement with more than 85% eye-diagram opening validates this method.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133076782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534634
Jin Wang, Yongjun Zhao, Zhigang Wang
A new kind of noise subspace based direction-of-arrival (DOA) estimation method is proposed. Unlike the MUSIC algorithm , the novel MUSIC like method use signal subspace estimated by multi-stage Wiener filter (MSWF) instead of array steering vectors for orthogonality test. Simulation shows that the proposed method offers improvements in precision and resolution performance for signals with low SNR, compared to MUSIC and ESPRIT algorithms.
{"title":"A MUSIC like DOA estimation method for signals with low SNR","authors":"Jin Wang, Yongjun Zhao, Zhigang Wang","doi":"10.1109/GSMM.2008.4534634","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534634","url":null,"abstract":"A new kind of noise subspace based direction-of-arrival (DOA) estimation method is proposed. Unlike the MUSIC algorithm , the novel MUSIC like method use signal subspace estimated by multi-stage Wiener filter (MSWF) instead of array steering vectors for orthogonality test. Simulation shows that the proposed method offers improvements in precision and resolution performance for signals with low SNR, compared to MUSIC and ESPRIT algorithms.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134457699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534621
Cai Xuanwei, Tian Yu, Tong Ling
Via hole is frequently applied in multilayer microwave circuit interconnection. As the discontinuity of via, it causes more reflection and radiation when frequency becomes higher. Therefore, electromagnetic characterization analysis of via is important in the design of microwave circuit. The paper presents the electromagnetic modeling method of via based on the principle of microwave network in multilayer microwave circuit. To achieve the simplification, the authors decompose the overall structure into several substructures, then, Matrix-Penciled Moment Method and microwave network theory are used to analyze each substructure.
{"title":"Electromagnetic Characterization Analysis of the Connecting Structure of the Via in Multilayered Microwave Circuit","authors":"Cai Xuanwei, Tian Yu, Tong Ling","doi":"10.1109/GSMM.2008.4534621","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534621","url":null,"abstract":"Via hole is frequently applied in multilayer microwave circuit interconnection. As the discontinuity of via, it causes more reflection and radiation when frequency becomes higher. Therefore, electromagnetic characterization analysis of via is important in the design of microwave circuit. The paper presents the electromagnetic modeling method of via based on the principle of microwave network in multilayer microwave circuit. To achieve the simplification, the authors decompose the overall structure into several substructures, then, Matrix-Penciled Moment Method and microwave network theory are used to analyze each substructure.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131943752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534568
X.S. Tang, X.J. Wang, S.Y. Zhang, Y.S. Chi, N. Jiang, F. Huang
Using 0.18 mum CMOS process, We have successfully designed and fabricated a low power 1:16 demultiplexer (DEMUX). By employing a tree-type structure and the pseudo-static logic circuits, the 1:16 DEMUX is presented for high speed operations. It consumes 99.2 mW in 1.8 V supply voltage. The test results show that it works well at 2 Gb/s and could reach a 2.5 Gb/s data speed under normal temperature.
采用0.18 μ m CMOS工艺，成功设计制造了低功耗1:16解复用器(DEMUX)。通过采用树型结构和伪静态逻辑电路，提出了1:16的DEMUX，用于高速运算。它在1.8 V电源电压下消耗99.2 mW。测试结果表明，该系统在2gb /s的速度下运行良好，常温下可达到2.5 Gb/s的数据传输速度。
{"title":"A 2-Gb/s 1:16 Demultiplexer in 0.18-μm CMOS Process","authors":"X.S. Tang, X.J. Wang, S.Y. Zhang, Y.S. Chi, N. Jiang, F. Huang","doi":"10.1109/GSMM.2008.4534568","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534568","url":null,"abstract":"Using 0.18 mum CMOS process, We have successfully designed and fabricated a low power 1:16 demultiplexer (DEMUX). By employing a tree-type structure and the pseudo-static logic circuits, the 1:16 DEMUX is presented for high speed operations. It consumes 99.2 mW in 1.8 V supply voltage. The test results show that it works well at 2 Gb/s and could reach a 2.5 Gb/s data speed under normal temperature.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114868738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534672
Lingbing Kong, Jinming Pei, Xingzhong Guo
A new dual-frequency broadband L-slot mixed E-shaped patch antenna is presented. It is based on E-shaped patch antenna. Two L-shaped slots are cut on E-shaped patch, and two short-pins are inserted between top patch and ground. Besides, the meandered feed patch is also used for good match. As simulated by HFSS10.0 software dual-frequency broadband is obtained. One is between 800 MHz and 980 MHz. The other is between 1500 MHz and 3000 MHz. The peak of gain is 3.2 dbi in 900 MHz and 5 dbi in 2000 MHz. It may apply for AMPS, GSM, DCS, PCS, UMTS and WLAN.
{"title":"A new dual-frequency broadband L-slot mixed E-shaped patch antenna","authors":"Lingbing Kong, Jinming Pei, Xingzhong Guo","doi":"10.1109/GSMM.2008.4534672","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534672","url":null,"abstract":"A new dual-frequency broadband L-slot mixed E-shaped patch antenna is presented. It is based on E-shaped patch antenna. Two L-shaped slots are cut on E-shaped patch, and two short-pins are inserted between top patch and ground. Besides, the meandered feed patch is also used for good match. As simulated by HFSS10.0 software dual-frequency broadband is obtained. One is between 800 MHz and 980 MHz. The other is between 1500 MHz and 3000 MHz. The peak of gain is 3.2 dbi in 900 MHz and 5 dbi in 2000 MHz. It may apply for AMPS, GSM, DCS, PCS, UMTS and WLAN.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115709857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534565
Chia-Shih Cheng, Chien-Cheng Wei, H. Chiu, Y. Chiang, J. Fu, Chia-Song Wu
This paper presents the designs and measurement results of the monolithic coplanar waveguide (CPW) Ka-band millimeter wave integrated circuits, including low noise amplifier, single-balance mixer, power amplifier, and oscillator. The millimeter wave ICs were fabricated with a 0.15 μm T-shape gate GaAs pseudomorphic HEMTs technology, carried out by commercially available foundry. The CPW process was applied in this work to avoid backside process and various impedances can also be adjusted by line width and gap. Therefore, these sub-circuits can be integrated using CPW technology easily and no via-hole process was involved to reduce the process cost.
{"title":"A Ka-Band Monolithic CPW-Mode T/R Modules Using 0.15 μm Gate-Length GaAs pHEMT Technology","authors":"Chia-Shih Cheng, Chien-Cheng Wei, H. Chiu, Y. Chiang, J. Fu, Chia-Song Wu","doi":"10.1109/GSMM.2008.4534565","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534565","url":null,"abstract":"This paper presents the designs and measurement results of the monolithic coplanar waveguide (CPW) Ka-band millimeter wave integrated circuits, including low noise amplifier, single-balance mixer, power amplifier, and oscillator. The millimeter wave ICs were fabricated with a 0.15 μm T-shape gate GaAs pseudomorphic HEMTs technology, carried out by commercially available foundry. The CPW process was applied in this work to avoid backside process and various impedances can also be adjusted by line width and gap. Therefore, these sub-circuits can be integrated using CPW technology easily and no via-hole process was involved to reduce the process cost.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115483609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534617
Tao Liu, Xiang-yu Cao, Jia-jun Ma, Wei Wang
A method is proposed to evaluate the effect of curvature on the reflection phase characteristics of electromagnetic band-gap structures in this paper. By observing the changes of the corresponding frequency band of return loss of different length dipoles antennas versus in-phase reflection band- gap, the effect of curvature on the reflection phase is achieved. The simulation results show that the curved electromagnetic band-gap structures still exhibit better in-phase reflection characteristics, and the curvature makes the band-gap of reflection phase wider and the band-gap center frequency shift to the higher frequency.
{"title":"Effect of Curvature on Reflection Phase Characteristics of Electromagnetic Band-gap Structures","authors":"Tao Liu, Xiang-yu Cao, Jia-jun Ma, Wei Wang","doi":"10.1109/GSMM.2008.4534617","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534617","url":null,"abstract":"A method is proposed to evaluate the effect of curvature on the reflection phase characteristics of electromagnetic band-gap structures in this paper. By observing the changes of the corresponding frequency band of return loss of different length dipoles antennas versus in-phase reflection band- gap, the effect of curvature on the reflection phase is achieved. The simulation results show that the curved electromagnetic band-gap structures still exhibit better in-phase reflection characteristics, and the curvature makes the band-gap of reflection phase wider and the band-gap center frequency shift to the higher frequency.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115487271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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