Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534603
Yu Li-yang, Gao Mingyu, Lu Jie
In order to make use of waste vibration energy from running car, research on the piezoelectric vibrating device has caught more attention. The cantilever support piezoelectric vibrating device that can output more power attracts more attention to it. It has been introduced that the effect of the length and thickness for the output voltage and charge, and however the effect of the width for the output voltage and charge is rarely researched, especially when there is an identical force at free boundary. In the paper, the curved theory of vibration and piezoelectric relevance knowledge is used to analyze the piezoelectric vibrator. The analyses have shown that the voltage and charge reduce with the width of piezoelectric vibrating device. Experiments verify the analysis.
{"title":"Research the dependence of output voltage and charge on the width of Piezoelectric vibrating device","authors":"Yu Li-yang, Gao Mingyu, Lu Jie","doi":"10.1109/GSMM.2008.4534603","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534603","url":null,"abstract":"In order to make use of waste vibration energy from running car, research on the piezoelectric vibrating device has caught more attention. The cantilever support piezoelectric vibrating device that can output more power attracts more attention to it. It has been introduced that the effect of the length and thickness for the output voltage and charge, and however the effect of the width for the output voltage and charge is rarely researched, especially when there is an identical force at free boundary. In the paper, the curved theory of vibration and piezoelectric relevance knowledge is used to analyze the piezoelectric vibrator. The analyses have shown that the voltage and charge reduce with the width of piezoelectric vibrating device. Experiments verify the analysis.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122339939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534553
D. Ko, Mun-Kyo Lee, Sang Jin Lee, S. Moon, D. Ko, S. Bang, Yong-Hyun Baek, Min Han, S. Choi, T. Baek, Dong-Chul Park, Sam-Dong Kim, J. Rhee
In this paper, we designed and fabricated waveguide voltage controlled oscillator (VCO), which have a center frequency of 94 GHz using the GaAs Gunn diode, varactor diode, and two bias posts with low pass filter (LPF). The cavity is designed for fundamental mode at 47 GHz and operated second harmonic VCO of 94 GHz center frequency. The fabricated VCO has 1.74 GHz bandwidth, 671 MHz linearity for 2.28% and 14 dBm output power. The highest output power is 15.58 dBm at 94.38 GHz.
{"title":"94 GHz Waveguide VCO for FMCW radar","authors":"D. Ko, Mun-Kyo Lee, Sang Jin Lee, S. Moon, D. Ko, S. Bang, Yong-Hyun Baek, Min Han, S. Choi, T. Baek, Dong-Chul Park, Sam-Dong Kim, J. Rhee","doi":"10.1109/GSMM.2008.4534553","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534553","url":null,"abstract":"In this paper, we designed and fabricated waveguide voltage controlled oscillator (VCO), which have a center frequency of 94 GHz using the GaAs Gunn diode, varactor diode, and two bias posts with low pass filter (LPF). The cavity is designed for fundamental mode at 47 GHz and operated second harmonic VCO of 94 GHz center frequency. The fabricated VCO has 1.74 GHz bandwidth, 671 MHz linearity for 2.28% and 14 dBm output power. The highest output power is 15.58 dBm at 94.38 GHz.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"66 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114049918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534653
H. Meng, W. Dou, K. Yin
In this paper, a Cassegrain monopulse antenna covered with a multilayered Von Karman radome at millimeter wave band is analyzed. The electrically large Cassegrain antenna with the aperture diameter about 38lambda0 is analyzed using ray tracing (RT) method and the radome with the length of 232lambda0 and base diameter of 82lambda0 is analyzed using aperture integration -surface integration (AI-SI) method. The curvature radius of the radome and the lateral transmission in the radome dielectric are considered in the analysis.
{"title":"Analysis of Antenna-Radome System at Millimeter Wave Band","authors":"H. Meng, W. Dou, K. Yin","doi":"10.1109/GSMM.2008.4534653","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534653","url":null,"abstract":"In this paper, a Cassegrain monopulse antenna covered with a multilayered Von Karman radome at millimeter wave band is analyzed. The electrically large Cassegrain antenna with the aperture diameter about 38lambda0 is analyzed using ray tracing (RT) method and the radome with the length of 232lambda0 and base diameter of 82lambda0 is analyzed using aperture integration -surface integration (AI-SI) method. The curvature radius of the radome and the lateral transmission in the radome dielectric are considered in the analysis.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125245182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534641
A. Kasbari, A. Ouslimani, S. Blayac, A. Konczykowska
An improved design method for high speed bipolar circuits is presented. It uses iso base-collector capacitance curves superposed to the duty cycles plots in the (Ic,Vce) plane. This new optimization way gives the optimum operating region for each transistor of a bipolar circuit to reach the best trade-off between the switching speed and the power consumption. Electrical design of emitter-coupled pair, which constitutes the basis of emitter-coupled logic (ECL) circuits, is detailed to explain the design method. Each part of the measurement set-up is characterized in time and frequency domains to improve the measurement method. These improvements have enabled the design and characterization of InP double-heterojunction-bipolar transistor master-slave D-type flip-flop circuits. 40 Gb/s measurement with more than 85% eye-diagram opening validates this method.
{"title":"Improved Design and Characterization Method for Very High Speed Bipolar Circuits","authors":"A. Kasbari, A. Ouslimani, S. Blayac, A. Konczykowska","doi":"10.1109/GSMM.2008.4534641","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534641","url":null,"abstract":"An improved design method for high speed bipolar circuits is presented. It uses iso base-collector capacitance curves superposed to the duty cycles plots in the (Ic,Vce) plane. This new optimization way gives the optimum operating region for each transistor of a bipolar circuit to reach the best trade-off between the switching speed and the power consumption. Electrical design of emitter-coupled pair, which constitutes the basis of emitter-coupled logic (ECL) circuits, is detailed to explain the design method. Each part of the measurement set-up is characterized in time and frequency domains to improve the measurement method. These improvements have enabled the design and characterization of InP double-heterojunction-bipolar transistor master-slave D-type flip-flop circuits. 40 Gb/s measurement with more than 85% eye-diagram opening validates this method.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133076782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534672
Lingbing Kong, Jinming Pei, Xingzhong Guo
A new dual-frequency broadband L-slot mixed E-shaped patch antenna is presented. It is based on E-shaped patch antenna. Two L-shaped slots are cut on E-shaped patch, and two short-pins are inserted between top patch and ground. Besides, the meandered feed patch is also used for good match. As simulated by HFSS10.0 software dual-frequency broadband is obtained. One is between 800 MHz and 980 MHz. The other is between 1500 MHz and 3000 MHz. The peak of gain is 3.2 dbi in 900 MHz and 5 dbi in 2000 MHz. It may apply for AMPS, GSM, DCS, PCS, UMTS and WLAN.
{"title":"A new dual-frequency broadband L-slot mixed E-shaped patch antenna","authors":"Lingbing Kong, Jinming Pei, Xingzhong Guo","doi":"10.1109/GSMM.2008.4534672","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534672","url":null,"abstract":"A new dual-frequency broadband L-slot mixed E-shaped patch antenna is presented. It is based on E-shaped patch antenna. Two L-shaped slots are cut on E-shaped patch, and two short-pins are inserted between top patch and ground. Besides, the meandered feed patch is also used for good match. As simulated by HFSS10.0 software dual-frequency broadband is obtained. One is between 800 MHz and 980 MHz. The other is between 1500 MHz and 3000 MHz. The peak of gain is 3.2 dbi in 900 MHz and 5 dbi in 2000 MHz. It may apply for AMPS, GSM, DCS, PCS, UMTS and WLAN.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115709857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534646
Fuhong Guan, Xiaowei Sun, Wei Xue, Jian Zhang
This paper presents a tunable dual-band microstrip after using step-impedance resonators (SIR) with wide stopband and low insertion loss. The dual-band Alter employs two SIR single-band Alters for the specifications of the two passbands respectively and using novel layout to make the two single-band Alter can be designed independently and achieve wide stopband. A prototype dual-band filter operated at 2.07 and 3.15 GHz is designed and fabricated. The upper stopband is extended over 10 GHz. Good agreement achieved between the numerical and measured results.
{"title":"Design of A Tunable Dual-Band Filter Using Step-Impedance Resonators with Wide Stopband","authors":"Fuhong Guan, Xiaowei Sun, Wei Xue, Jian Zhang","doi":"10.1109/GSMM.2008.4534646","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534646","url":null,"abstract":"This paper presents a tunable dual-band microstrip after using step-impedance resonators (SIR) with wide stopband and low insertion loss. The dual-band Alter employs two SIR single-band Alters for the specifications of the two passbands respectively and using novel layout to make the two single-band Alter can be designed independently and achieve wide stopband. A prototype dual-band filter operated at 2.07 and 3.15 GHz is designed and fabricated. The upper stopband is extended over 10 GHz. Good agreement achieved between the numerical and measured results.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"628 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114097141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534568
X.S. Tang, X.J. Wang, S.Y. Zhang, Y.S. Chi, N. Jiang, F. Huang
Using 0.18 mum CMOS process, We have successfully designed and fabricated a low power 1:16 demultiplexer (DEMUX). By employing a tree-type structure and the pseudo-static logic circuits, the 1:16 DEMUX is presented for high speed operations. It consumes 99.2 mW in 1.8 V supply voltage. The test results show that it works well at 2 Gb/s and could reach a 2.5 Gb/s data speed under normal temperature.
采用0.18 μ m CMOS工艺，成功设计制造了低功耗1:16解复用器(DEMUX)。通过采用树型结构和伪静态逻辑电路，提出了1:16的DEMUX，用于高速运算。它在1.8 V电源电压下消耗99.2 mW。测试结果表明，该系统在2gb /s的速度下运行良好，常温下可达到2.5 Gb/s的数据传输速度。
{"title":"A 2-Gb/s 1:16 Demultiplexer in 0.18-μm CMOS Process","authors":"X.S. Tang, X.J. Wang, S.Y. Zhang, Y.S. Chi, N. Jiang, F. Huang","doi":"10.1109/GSMM.2008.4534568","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534568","url":null,"abstract":"Using 0.18 mum CMOS process, We have successfully designed and fabricated a low power 1:16 demultiplexer (DEMUX). By employing a tree-type structure and the pseudo-static logic circuits, the 1:16 DEMUX is presented for high speed operations. It consumes 99.2 mW in 1.8 V supply voltage. The test results show that it works well at 2 Gb/s and could reach a 2.5 Gb/s data speed under normal temperature.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114868738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534565
Chia-Shih Cheng, Chien-Cheng Wei, H. Chiu, Y. Chiang, J. Fu, Chia-Song Wu
This paper presents the designs and measurement results of the monolithic coplanar waveguide (CPW) Ka-band millimeter wave integrated circuits, including low noise amplifier, single-balance mixer, power amplifier, and oscillator. The millimeter wave ICs were fabricated with a 0.15 μm T-shape gate GaAs pseudomorphic HEMTs technology, carried out by commercially available foundry. The CPW process was applied in this work to avoid backside process and various impedances can also be adjusted by line width and gap. Therefore, these sub-circuits can be integrated using CPW technology easily and no via-hole process was involved to reduce the process cost.
{"title":"A Ka-Band Monolithic CPW-Mode T/R Modules Using 0.15 μm Gate-Length GaAs pHEMT Technology","authors":"Chia-Shih Cheng, Chien-Cheng Wei, H. Chiu, Y. Chiang, J. Fu, Chia-Song Wu","doi":"10.1109/GSMM.2008.4534565","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534565","url":null,"abstract":"This paper presents the designs and measurement results of the monolithic coplanar waveguide (CPW) Ka-band millimeter wave integrated circuits, including low noise amplifier, single-balance mixer, power amplifier, and oscillator. The millimeter wave ICs were fabricated with a 0.15 μm T-shape gate GaAs pseudomorphic HEMTs technology, carried out by commercially available foundry. The CPW process was applied in this work to avoid backside process and various impedances can also be adjusted by line width and gap. Therefore, these sub-circuits can be integrated using CPW technology easily and no via-hole process was involved to reduce the process cost.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115483609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534617
Tao Liu, Xiang-yu Cao, Jia-jun Ma, Wei Wang
A method is proposed to evaluate the effect of curvature on the reflection phase characteristics of electromagnetic band-gap structures in this paper. By observing the changes of the corresponding frequency band of return loss of different length dipoles antennas versus in-phase reflection band- gap, the effect of curvature on the reflection phase is achieved. The simulation results show that the curved electromagnetic band-gap structures still exhibit better in-phase reflection characteristics, and the curvature makes the band-gap of reflection phase wider and the band-gap center frequency shift to the higher frequency.
{"title":"Effect of Curvature on Reflection Phase Characteristics of Electromagnetic Band-gap Structures","authors":"Tao Liu, Xiang-yu Cao, Jia-jun Ma, Wei Wang","doi":"10.1109/GSMM.2008.4534617","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534617","url":null,"abstract":"A method is proposed to evaluate the effect of curvature on the reflection phase characteristics of electromagnetic band-gap structures in this paper. By observing the changes of the corresponding frequency band of return loss of different length dipoles antennas versus in-phase reflection band- gap, the effect of curvature on the reflection phase is achieved. The simulation results show that the curved electromagnetic band-gap structures still exhibit better in-phase reflection characteristics, and the curvature makes the band-gap of reflection phase wider and the band-gap center frequency shift to the higher frequency.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115487271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-04-21DOI: 10.1109/GSMM.2008.4534665
H. Hai, J.C. Frankosky, R. R. Hornung, M.T. Smith
Millimeter applications place heightened and unique requirements on circuit board laminates used as transmission lines or as antennas. Historically, applications were low volume. Materials were either adapted from standard or semi-standard products that were not ideal for millimeter wave or the materials that were military grade in nature. Recent growth of millimeter applications, such as ACC (adaptive cruise control) and side lane changing sensors for standard, high volume, affordably priced vehicles or commercial millimeter communication systems, has driven circuit board laminate fabricators to innovate materials. This paper explores advancements in millimeter wave circuit boards and the technical requirements placed on materials.
{"title":"Millimeter Wave Printed Circuit Board Developments - Improvements for Mechanical Packaging and Electrical Requirements","authors":"H. Hai, J.C. Frankosky, R. R. Hornung, M.T. Smith","doi":"10.1109/GSMM.2008.4534665","DOIUrl":"https://doi.org/10.1109/GSMM.2008.4534665","url":null,"abstract":"Millimeter applications place heightened and unique requirements on circuit board laminates used as transmission lines or as antennas. Historically, applications were low volume. Materials were either adapted from standard or semi-standard products that were not ideal for millimeter wave or the materials that were military grade in nature. Recent growth of millimeter applications, such as ACC (adaptive cruise control) and side lane changing sensors for standard, high volume, affordably priced vehicles or commercial millimeter communication systems, has driven circuit board laminate fabricators to innovate materials. This paper explores advancements in millimeter wave circuit boards and the technical requirements placed on materials.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126176039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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