Pub Date : 2019-05-01DOI: 10.1109/IEEE-IWS.2019.8804089
Xiutao Huang, Conghui Lu, Cancan Rong, X. Tao, Minghai Liu
In general, S-parameter methods have been used to calculate electromagnetic parameters of artificially structured materials, which is limited to far-field region. In reality, it is found that such method is not well suited for near-field application, such as wireless power transfer (WPT). In this paper, we present an equivalent-circuit model for extracting relative permeability of near-field metamaterial (NFM). Based on the proposed circuit model, it is possible to analyze the magnetic properties of NFM, and the resonant frequency can be quickly predicted. Finally, full-wave simulation and experimental measurement verify the analysis result.
{"title":"Effective Permeability Retrieval of Near-field Metamaterial based on Equivalent-Circuit Model","authors":"Xiutao Huang, Conghui Lu, Cancan Rong, X. Tao, Minghai Liu","doi":"10.1109/IEEE-IWS.2019.8804089","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2019.8804089","url":null,"abstract":"In general, S-parameter methods have been used to calculate electromagnetic parameters of artificially structured materials, which is limited to far-field region. In reality, it is found that such method is not well suited for near-field application, such as wireless power transfer (WPT). In this paper, we present an equivalent-circuit model for extracting relative permeability of near-field metamaterial (NFM). Based on the proposed circuit model, it is possible to analyze the magnetic properties of NFM, and the resonant frequency can be quickly predicted. Finally, full-wave simulation and experimental measurement verify the analysis result.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"379 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132152541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.1109/IEEE-IWS.2019.8803896
Hongcai Yang, Yi Fan, Xiongying Liu, M. Tentzeris
This paper presents a dual-band circularly polarized (CP) antenna with wide 3-dB axial ratio (AR) beamwidth for compass navigation satellite system (CNSS) applications. The antenna is designed to be a double-layer structure and fed through a single coaxial probe. Two patches stacked together with truncated corners and symmetry L-shaped stubs are used to achieve two operating frequency bands, i.e., B1 (1.561 GHz) and B2 (1.207 GHz), for CNSS. In particular, a circular ground plane with four curved slots is adopted to achieve a symmetrical radiation pattern and a wide 3-dB AR beamwidth. At 1.561 GHz, the peak gain of the proposed antenna is 6.4 dBi, and the 3-dB AR beamwidths of 214°and 200°in the xz- and yz-planes are obtained, respectively. At 1.207 GHz, the proposed antenna has a maximum gain of 6.0 dBi, and the 3-dB AR beamwidths of 221°and 202°in the xz- and yz-planes.
{"title":"Single-Fed Dual-Band Circularly Polarized Patch Antenna With Wide 3-dB Axial Ratio Beamwidth for CNSS Applications","authors":"Hongcai Yang, Yi Fan, Xiongying Liu, M. Tentzeris","doi":"10.1109/IEEE-IWS.2019.8803896","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2019.8803896","url":null,"abstract":"This paper presents a dual-band circularly polarized (CP) antenna with wide 3-dB axial ratio (AR) beamwidth for compass navigation satellite system (CNSS) applications. The antenna is designed to be a double-layer structure and fed through a single coaxial probe. Two patches stacked together with truncated corners and symmetry L-shaped stubs are used to achieve two operating frequency bands, i.e., B1 (1.561 GHz) and B2 (1.207 GHz), for CNSS. In particular, a circular ground plane with four curved slots is adopted to achieve a symmetrical radiation pattern and a wide 3-dB AR beamwidth. At 1.561 GHz, the peak gain of the proposed antenna is 6.4 dBi, and the 3-dB AR beamwidths of 214°and 200°in the xz- and yz-planes are obtained, respectively. At 1.207 GHz, the proposed antenna has a maximum gain of 6.0 dBi, and the 3-dB AR beamwidths of 221°and 202°in the xz- and yz-planes.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130805649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.1109/IEEE-IWS.2019.8803888
G. Su, Cao Wan, Dirong Chen, Xianghong Gao, Lingling Sun
This paper presents a 129.5-151.5GHz fully differential power amplifier in 65nm CMOS process. The power amplifier constitutes a two-stage neutralized amplifier and an one-stage cascode amplifier. The neutralized amplifier is employed to improve the gain and isolation of the power amplifier, and the cascode structure is mainly used to improve the output power. The post-layout simulation results show that PA realizes a small signal gain of 10.5dB at the frequency of 139GHz, and the 3dB bandwidth of 22GHz, with a saturated output power of 9dBm, and this power amplifier supports modulation of OOK signal with 20Gbps transmission rate.
{"title":"A 129.5-151.5GHz Fully Differential Power Amplifier in 65nm CMOS","authors":"G. Su, Cao Wan, Dirong Chen, Xianghong Gao, Lingling Sun","doi":"10.1109/IEEE-IWS.2019.8803888","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2019.8803888","url":null,"abstract":"This paper presents a 129.5-151.5GHz fully differential power amplifier in 65nm CMOS process. The power amplifier constitutes a two-stage neutralized amplifier and an one-stage cascode amplifier. The neutralized amplifier is employed to improve the gain and isolation of the power amplifier, and the cascode structure is mainly used to improve the output power. The post-layout simulation results show that PA realizes a small signal gain of 10.5dB at the frequency of 139GHz, and the 3dB bandwidth of 22GHz, with a saturated output power of 9dBm, and this power amplifier supports modulation of OOK signal with 20Gbps transmission rate.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125368735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.1109/IEEE-IWS.2019.8804100
Y. Zeng, G. Xiao, Lina Qiu
A 5-layered FSS is designed to enhance the transmission efficiency of antenna domes in Ka-band. The structure exhibits dual-band band-pass response in the frequency range of 17.7-21.2GHz and 27.5-31GHz. The insertion loss is less than 0.5 dB in the dual-band. The design has been validated by simulations to have satisfactory performance under a broad range of incident angles.
{"title":"Ka-Band Satellite Communication Antenna Dome Using Dual-Band Frequency Selective Surfaces","authors":"Y. Zeng, G. Xiao, Lina Qiu","doi":"10.1109/IEEE-IWS.2019.8804100","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2019.8804100","url":null,"abstract":"A 5-layered FSS is designed to enhance the transmission efficiency of antenna domes in Ka-band. The structure exhibits dual-band band-pass response in the frequency range of 17.7-21.2GHz and 27.5-31GHz. The insertion loss is less than 0.5 dB in the dual-band. The design has been validated by simulations to have satisfactory performance under a broad range of incident angles.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125544505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.1109/IEEE-IWS.2019.8803950
Yang Yang, Z. Hou, Xi Zhu, W. Che, Q. Xue
This paper presents a millimeter-wave on-chip tunable coupler with tunable power dividing ratios and constant phase responses. Composed by two coupled-lines, two capacitors and two series-connected varactors, the proposed tunable coupler offers wideband frequency responses. Theoretical analysis for wideband operation is provided with design parameters. For demonstration, a millimeter-wave tunable coupler is implemented in a standard 0.13-μm SiGe (Bi) CMOS technology and measured through an on-wafer probing system. From 25 to 31 GHz, the proposed tunable coupler shows a power-dividing ratio tuned from 0 to 5 dB, while maintaining an in-band return loss of better than 10 dB and an output isolation of 20 dB, simultaneously. The phase imbalance is better than ±4° with a measured insertion loss of 1.6 dB across the entire tuning range.
{"title":"A Millimeter-Wave Reconfigurable On-Chip Coupler with Tunable Power-Dividing Ratios","authors":"Yang Yang, Z. Hou, Xi Zhu, W. Che, Q. Xue","doi":"10.1109/IEEE-IWS.2019.8803950","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2019.8803950","url":null,"abstract":"This paper presents a millimeter-wave on-chip tunable coupler with tunable power dividing ratios and constant phase responses. Composed by two coupled-lines, two capacitors and two series-connected varactors, the proposed tunable coupler offers wideband frequency responses. Theoretical analysis for wideband operation is provided with design parameters. For demonstration, a millimeter-wave tunable coupler is implemented in a standard 0.13-μm SiGe (Bi) CMOS technology and measured through an on-wafer probing system. From 25 to 31 GHz, the proposed tunable coupler shows a power-dividing ratio tuned from 0 to 5 dB, while maintaining an in-band return loss of better than 10 dB and an output isolation of 20 dB, simultaneously. The phase imbalance is better than ±4° with a measured insertion loss of 1.6 dB across the entire tuning range.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125551251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.1109/IEEE-IWS.2019.8804037
Yilin Zheng, Ke Chen, T. Jiang, Junming Zhao, Yijun Feng
We have proposed a practical way to realize tunable metamaterial absorber at L-band microwave frequencies. The proposed absorber has a sandwiched structure composed of metallic resonator with lumped varactors loadings, dielectric substrate and ground plane. The capacitance value of varactors can be adjusted from 0.5 pF to 2.4 pF by controlling the bias voltage, thus leading to a continuous tunability of the absorption peak from 1.26 GHz to 1.67 GHz, with over 90% energy absorption. Moreover, the absorber has an ultrathin thickness which is less than 1/80 the wavelength of the lowest working frequency.
{"title":"Ultrathin L-band Microwave Tunable Metamaterial Absorber","authors":"Yilin Zheng, Ke Chen, T. Jiang, Junming Zhao, Yijun Feng","doi":"10.1109/IEEE-IWS.2019.8804037","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2019.8804037","url":null,"abstract":"We have proposed a practical way to realize tunable metamaterial absorber at L-band microwave frequencies. The proposed absorber has a sandwiched structure composed of metallic resonator with lumped varactors loadings, dielectric substrate and ground plane. The capacitance value of varactors can be adjusted from 0.5 pF to 2.4 pF by controlling the bias voltage, thus leading to a continuous tunability of the absorption peak from 1.26 GHz to 1.67 GHz, with over 90% energy absorption. Moreover, the absorber has an ultrathin thickness which is less than 1/80 the wavelength of the lowest working frequency.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126512269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.1109/IEEE-IWS.2019.8804129
Hao Gao, P. Baltus
This paper presents a 71 GHz fully on-chip 3-stage inductor-peaked rectifier in 65-nm CMOS technology. The multistage rectifier is the bottleneck in realizing on-chip wireless power receivers. In this paper, sensitivity and efficiency problems of the mm-wave rectifier are discussed and a 3-stage inductor-peaked rectifier structure is proposed and realized. By cascading inductor-peaked rectifiers with optimized layout, the measured rectifier provide 1 V output voltage with 5 dBm input power at 71 GHz, it also reaches 8% efficiency with 720 µA current load. Compared to previous work of 45 GHz rectifier with 1.2% efficiency [1] and 62 GHz with 7% efficiency [2], this work provides higher efficiency and higher output voltage for mm-wave wireless power receivers.
{"title":"A 71 GHz 3-Stage Rectifier with 8% Efficiency","authors":"Hao Gao, P. Baltus","doi":"10.1109/IEEE-IWS.2019.8804129","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2019.8804129","url":null,"abstract":"This paper presents a 71 GHz fully on-chip 3-stage inductor-peaked rectifier in 65-nm CMOS technology. The multistage rectifier is the bottleneck in realizing on-chip wireless power receivers. In this paper, sensitivity and efficiency problems of the mm-wave rectifier are discussed and a 3-stage inductor-peaked rectifier structure is proposed and realized. By cascading inductor-peaked rectifiers with optimized layout, the measured rectifier provide 1 V output voltage with 5 dBm input power at 71 GHz, it also reaches 8% efficiency with 720 µA current load. Compared to previous work of 45 GHz rectifier with 1.2% efficiency [1] and 62 GHz with 7% efficiency [2], this work provides higher efficiency and higher output voltage for mm-wave wireless power receivers.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126917799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.1109/IEEE-IWS.2019.8803968
K. Xu, Y. Bai, Donghao Li
Two quarter-wavelength three-line coupled structures (TLCSs) are employed in the design of filtering power divider (FPD) to achieve a wide fractional bandwidth and good out-of-band rejection. The center frequency of the FPD passband can be adjusted flexibly by changing the length of the TLCS while the fractional bandwidth will remain unchanged. The frequency selectivity and passband bandwidth of the FPD can be easily controlled with the variations of the TLCS width and gap, respectively. Furthermore, the proposed FPD topology can be extended to design a four-way FPD through adding two conventional Wilkinson power dividers. This four-way FPD is fabricated with the center frequencies of 2.42 GHz and 3-dB fractional bandwidths of over 100%. The simulated and measured results are compared with good agreement.
{"title":"Wideband Four-Way Filtering Power Divider Using Simple Three-Line Coupled Structures","authors":"K. Xu, Y. Bai, Donghao Li","doi":"10.1109/IEEE-IWS.2019.8803968","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2019.8803968","url":null,"abstract":"Two quarter-wavelength three-line coupled structures (TLCSs) are employed in the design of filtering power divider (FPD) to achieve a wide fractional bandwidth and good out-of-band rejection. The center frequency of the FPD passband can be adjusted flexibly by changing the length of the TLCS while the fractional bandwidth will remain unchanged. The frequency selectivity and passband bandwidth of the FPD can be easily controlled with the variations of the TLCS width and gap, respectively. Furthermore, the proposed FPD topology can be extended to design a four-way FPD through adding two conventional Wilkinson power dividers. This four-way FPD is fabricated with the center frequencies of 2.42 GHz and 3-dB fractional bandwidths of over 100%. The simulated and measured results are compared with good agreement.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121711924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.1109/IEEE-IWS.2019.8804124
Chengkai Wu, Yong Zhang, Mingxing Long, Yuehang Xu, R. Xu
This paper presents the design and demonstration of a 110GHz broadband varistor tripler utilizing two commercial gallium arsenide Schottky diodes from United Monolithic Semiconductor (UMS) Inc. Anti-parallel configuration eliminates even harmonics and thus no additional output filtering is needed. An accurate threedimensional electromagnetic (3D-EM) model is established to characterize the high-frequency parasitic effect of diodes. Linear and nonlinear simulations are performed iteratively to design the embedding circuit for high efficiency conversion. The whole circuit of the tripler is fabricated on RT/Rogers 5880 substrate with thickness of 0.127mm, housed in split waveguide blocks. The measured results show that with 20~22dBm input power at Ka-band, the tripler reaches maximum 9 dBm output power at 106 GHz and achieves 2.3%~5.5% efficiency across 90~120 GHz frequency band.
{"title":"Design of a 110 GHz broadband frequency tripler using planar varistor Schottky diodes","authors":"Chengkai Wu, Yong Zhang, Mingxing Long, Yuehang Xu, R. Xu","doi":"10.1109/IEEE-IWS.2019.8804124","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2019.8804124","url":null,"abstract":"This paper presents the design and demonstration of a 110GHz broadband varistor tripler utilizing two commercial gallium arsenide Schottky diodes from United Monolithic Semiconductor (UMS) Inc. Anti-parallel configuration eliminates even harmonics and thus no additional output filtering is needed. An accurate threedimensional electromagnetic (3D-EM) model is established to characterize the high-frequency parasitic effect of diodes. Linear and nonlinear simulations are performed iteratively to design the embedding circuit for high efficiency conversion. The whole circuit of the tripler is fabricated on RT/Rogers 5880 substrate with thickness of 0.127mm, housed in split waveguide blocks. The measured results show that with 20~22dBm input power at Ka-band, the tripler reaches maximum 9 dBm output power at 106 GHz and achieves 2.3%~5.5% efficiency across 90~120 GHz frequency band.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121360620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-01DOI: 10.1109/IEEE-IWS.2019.8804043
Yufei Wu, Shanri Chen, Shaolin Zhou, S. Liao
A polarization-independent tunable filter with initial band-rejection frequency centered at 0.67 THz is proposed by integrating the phase transition medium with meta-surface hierarchy. The device employs the composite meta-elements of closed ring resonators (CRR) and the cross-shaped electric resonators to couple with one layer of phase change medium on Rogers. The computational results reveal that the tunable frequency shifts from 670 GHz to 489 GHz can be obtained, with the initial resonant qualify factor Q of 8.27 and the -3 dB bandwidth of 81 GHz. As a result, the amorphous and crystalline state before and after phase change directly constitute a switchable or tunable filter with contrast ratio of 1227:1.
{"title":"A 0.67 THz Tunable Meta-surface Filter by Phase Change Medium","authors":"Yufei Wu, Shanri Chen, Shaolin Zhou, S. Liao","doi":"10.1109/IEEE-IWS.2019.8804043","DOIUrl":"https://doi.org/10.1109/IEEE-IWS.2019.8804043","url":null,"abstract":"A polarization-independent tunable filter with initial band-rejection frequency centered at 0.67 THz is proposed by integrating the phase transition medium with meta-surface hierarchy. The device employs the composite meta-elements of closed ring resonators (CRR) and the cross-shaped electric resonators to couple with one layer of phase change medium on Rogers. The computational results reveal that the tunable frequency shifts from 670 GHz to 489 GHz can be obtained, with the initial resonant qualify factor Q of 8.27 and the -3 dB bandwidth of 81 GHz. As a result, the amorphous and crystalline state before and after phase change directly constitute a switchable or tunable filter with contrast ratio of 1227:1.","PeriodicalId":306297,"journal":{"name":"2019 IEEE MTT-S International Wireless Symposium (IWS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125310893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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