The analysis of several important high-volume RF product markets, such as the TVRO business, the more mature cable TV industry, and the cellular communications industry is the focus of this work. A look at the volumes and costs of these products, as well as the RF modules comprising them, help illustrate market demands. The role of various integrated technologies in these and future products, such as wireless cable, direct digital TV and, set-top converters are also discussed. In addition, detailed cost discussions focus on the "trade-offs" between hybrid and monolithic circuits, and Si versus GaAs technology. The remainder of the analysis concentrates on the aspects of designing for low cost production and the prediction of future trends.<>
{"title":"Low-cost high-volume RF products: dream, anticipation, or reality?","authors":"A. Pavio","doi":"10.1109/MCS.1995.471002","DOIUrl":"https://doi.org/10.1109/MCS.1995.471002","url":null,"abstract":"The analysis of several important high-volume RF product markets, such as the TVRO business, the more mature cable TV industry, and the cellular communications industry is the focus of this work. A look at the volumes and costs of these products, as well as the RF modules comprising them, help illustrate market demands. The role of various integrated technologies in these and future products, such as wireless cable, direct digital TV and, set-top converters are also discussed. In addition, detailed cost discussions focus on the \"trade-offs\" between hybrid and monolithic circuits, and Si versus GaAs technology. The remainder of the analysis concentrates on the aspects of designing for low cost production and the prediction of future trends.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115339777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Koizumi, S. Nagata, K. Tateoka, K. Kanazawa, D. Ueda
A GaAs single balanced mixer IC with built-in active baluns for IF and LO inputs has been developed. The present mixer achieved the conversion gain of 16 dB and the LO signal suppression over 30 dBc at the LO input power of 0 dBm. Owing to a novel BST (Barium Strontium Titanate) capacitor technology, the implemented mixer IC was packaged in the small 6 pin outline with the extremely small chip size of 0.6/spl times/0.65 mm/sup 2/. The IC can eliminate the LO filter of the up-conversion system for a variety of handyphone-sets in L-band.<>
{"title":"A GaAs single balanced mixer MMIC with built-in active balun for personal communication systems","authors":"H. Koizumi, S. Nagata, K. Tateoka, K. Kanazawa, D. Ueda","doi":"10.1109/MCS.1995.470987","DOIUrl":"https://doi.org/10.1109/MCS.1995.470987","url":null,"abstract":"A GaAs single balanced mixer IC with built-in active baluns for IF and LO inputs has been developed. The present mixer achieved the conversion gain of 16 dB and the LO signal suppression over 30 dBc at the LO input power of 0 dBm. Owing to a novel BST (Barium Strontium Titanate) capacitor technology, the implemented mixer IC was packaged in the small 6 pin outline with the extremely small chip size of 0.6/spl times/0.65 mm/sup 2/. The IC can eliminate the LO filter of the up-conversion system for a variety of handyphone-sets in L-band.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125287237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Wei, Y. Tkachenko, J.C.M. Hwang, K.E. Smith, A. Peake
A novel internal-node waveform probing technique has been demonstrated on a MMIC. The error of the measurement and its perturbance to circuit operation was estimated and verified to be less than 20%. Valuable insight was obtained from the variation of waveforms as a function of frequency, drive and location.<>
{"title":"Internal-node waveform probing of MMIC power amplifiers","authors":"C. Wei, Y. Tkachenko, J.C.M. Hwang, K.E. Smith, A. Peake","doi":"10.1109/MCS.1995.470975","DOIUrl":"https://doi.org/10.1109/MCS.1995.470975","url":null,"abstract":"A novel internal-node waveform probing technique has been demonstrated on a MMIC. The error of the measurement and its perturbance to circuit operation was estimated and verified to be less than 20%. Valuable insight was obtained from the variation of waveforms as a function of frequency, drive and location.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133216556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Weinreb, E. Fischer, B. Kane, N. Byer, M. Zimmerman
A compact (1.8 by 3.0 by 3.8 cm) WR-10 waveguide amplifier module providing 310-mW power output, 20-dB gain, and 5 GHz of 1-dB bandwidth at a center frequency of 96 GHz is described. The module is comprised of 22 identical PHEMT chips, 4-way microstrip power combiners and dividers, and a 4-way waveguide power combiner.<>
{"title":"W-band 0.3 W PHEMT MMIC power amplifier module","authors":"S. Weinreb, E. Fischer, B. Kane, N. Byer, M. Zimmerman","doi":"10.1109/MCS.1995.470998","DOIUrl":"https://doi.org/10.1109/MCS.1995.470998","url":null,"abstract":"A compact (1.8 by 3.0 by 3.8 cm) WR-10 waveguide amplifier module providing 310-mW power output, 20-dB gain, and 5 GHz of 1-dB bandwidth at a center frequency of 96 GHz is described. The module is comprised of 22 identical PHEMT chips, 4-way microstrip power combiners and dividers, and a 4-way waveguide power combiner.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132961444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel Q-band monolithic harmonic mixer has been designed and fabricated using the 0.15 /spl mu/m pseudomorphic InGaAs-GaAs HEMT process for the first time. This high performance mixer is capable of downconverting a Q-band RF signal with the 12th, 14th or 16th harmonic of a S-band LO signal to produce a signal suitable for a phase locked loop. This compact mixer consists of antiparallel HEMT Schottky diodes with a lumped element IF and LO diplexer and a RF band-pass filter. Measured data shows agreement between simulations and measurements. Total chip size is 1.0 mm/spl times/2.5 mm.<>
首次采用0.15 /spl μ m假晶InGaAs-GaAs HEMT工艺设计并制作了一种新型q波段单片谐波混频器。这款高性能混频器能够将q波段RF信号与s波段LO信号的12、14或16次谐波进行下变频，从而产生适合锁相环的信号。这个紧凑的混频器由反平行的HEMT肖特基二极管与集总元件中频和低通双工器和射频带通滤波器组成。实测数据与模拟结果一致。总芯片尺寸为1.0 mm/spl倍/2.5 mm
{"title":"A novel monolithic HEMT harmonic mixer at Q-band","authors":"R. Katz, S. Maas, A. Sharma, D. Smith","doi":"10.1109/MCS.1995.470995","DOIUrl":"https://doi.org/10.1109/MCS.1995.470995","url":null,"abstract":"A novel Q-band monolithic harmonic mixer has been designed and fabricated using the 0.15 /spl mu/m pseudomorphic InGaAs-GaAs HEMT process for the first time. This high performance mixer is capable of downconverting a Q-band RF signal with the 12th, 14th or 16th harmonic of a S-band LO signal to produce a signal suitable for a phase locked loop. This compact mixer consists of antiparallel HEMT Schottky diodes with a lumped element IF and LO diplexer and a RF band-pass filter. Measured data shows agreement between simulations and measurements. Total chip size is 1.0 mm/spl times/2.5 mm.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134328776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An investigation of hydrogen degradation of GaAs MMICs (MESFET, PHEMT and HBT) was conducted to determine the threshold hydrogen concentration for spacecraft application. The maximum hydrogen in the hermetic package is found to be 0.6 torr (based on 10 year mission at ambient temperature of 125/spl deg/C). Hydrogen evolution in hermetic package is also studied to determine the source of hydrogen and to minimize its level in the package. Both studies demonstrate the high reliability of hermetic A40 (Al/Si) and Kovar (Fe/Ni/Co) packages for spacecraft applications.<>
{"title":"Hydrogen degradation of GaAs MMICs and hydrogen evolution in the hermetic package","authors":"Y. Saito, R. Griese, J. Kessler, R. Kono, J. Fang","doi":"10.1109/MCS.1995.470977","DOIUrl":"https://doi.org/10.1109/MCS.1995.470977","url":null,"abstract":"An investigation of hydrogen degradation of GaAs MMICs (MESFET, PHEMT and HBT) was conducted to determine the threshold hydrogen concentration for spacecraft application. The maximum hydrogen in the hermetic package is found to be 0.6 torr (based on 10 year mission at ambient temperature of 125/spl deg/C). Hydrogen evolution in hermetic package is also studied to determine the source of hydrogen and to minimize its level in the package. Both studies demonstrate the high reliability of hermetic A40 (Al/Si) and Kovar (Fe/Ni/Co) packages for spacecraft applications.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125291817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Multichip monolithic-integrated circuit modules that provide low-noise amplification, bandpass filtering, square-law detection, and DC amplification of a broadband millimeter-wave signal are described. The module is compact (4.50 cm/sup 3/) and lightweight (37 g), has low power consumption (80-130 mW), and is well-suited for use in focal-plane arrays to provide passive imaging of millimeter-wave thermal radiation. The theoretical gain requirement, radiometer construction, and measured results are reported.<>
{"title":"High-sensitivity W-band MMIC radiometer modules","authors":"B. Kane, S. Weinreb, E. Fischer, N. Byer","doi":"10.1109/MCS.1995.470991","DOIUrl":"https://doi.org/10.1109/MCS.1995.470991","url":null,"abstract":"Multichip monolithic-integrated circuit modules that provide low-noise amplification, bandpass filtering, square-law detection, and DC amplification of a broadband millimeter-wave signal are described. The module is compact (4.50 cm/sup 3/) and lightweight (37 g), has low power consumption (80-130 mW), and is well-suited for use in focal-plane arrays to provide passive imaging of millimeter-wave thermal radiation. The theoretical gain requirement, radiometer construction, and measured results are reported.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133112050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A.K. Sharma, D.M. Smith, M. Aust, R.H. Katz, J. Yonaki, R.B. Womack, M.D. Bindenbender
A high performance Q-band monolithic HEMT transceiver chipset has been developed for millimeter-wave commercial digital radio systems. This highly compact transceiver chipset consists of low noise amplifier, power amplifier with detector, voltage controlled oscillator with buffer amplifier, mixer and harmonic mixer. The chipset has demonstrated high yield making it suitable for high volume commercial applications.<>
{"title":"A high performance transceiver chipset for millimeter-wave commercial digital communication systems","authors":"A.K. Sharma, D.M. Smith, M. Aust, R.H. Katz, J. Yonaki, R.B. Womack, M.D. Bindenbender","doi":"10.1109/MCS.1995.470994","DOIUrl":"https://doi.org/10.1109/MCS.1995.470994","url":null,"abstract":"A high performance Q-band monolithic HEMT transceiver chipset has been developed for millimeter-wave commercial digital radio systems. This highly compact transceiver chipset consists of low noise amplifier, power amplifier with detector, voltage controlled oscillator with buffer amplifier, mixer and harmonic mixer. The chipset has demonstrated high yield making it suitable for high volume commercial applications.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133264694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Summary form only given. Intelligent Transportation Systems (ITS) represent an expanding international market. "Intelligent" is synonymous with the application of technology to the movement of goods and people. The largest potential market is services and products which includes systems for passenger vehicles. In the year 2000 and beyond, electronic systems will be integral to the operation, safety and control of the vehicle including collision warning and avoidance, emergency communications, vision enhancement, etc. Eventually, many driving functions will be "automated"-the extent of automation will be determined by user acceptance including cost. The vehicle market will be a significant user of monolithic circuits. Preliminary data is presented on the market categories and potential volume. The presentation places emphasis on showing illustrative examples of ITS system deployment and market projections.<>
{"title":"Intelligent transportation systems","authors":"W. Fink","doi":"10.1109/MCS.1995.471004","DOIUrl":"https://doi.org/10.1109/MCS.1995.471004","url":null,"abstract":"Summary form only given. Intelligent Transportation Systems (ITS) represent an expanding international market. \"Intelligent\" is synonymous with the application of technology to the movement of goods and people. The largest potential market is services and products which includes systems for passenger vehicles. In the year 2000 and beyond, electronic systems will be integral to the operation, safety and control of the vehicle including collision warning and avoidance, emergency communications, vision enhancement, etc. Eventually, many driving functions will be \"automated\"-the extent of automation will be determined by user acceptance including cost. The vehicle market will be a significant user of monolithic circuits. Preliminary data is presented on the market categories and potential volume. The presentation places emphasis on showing illustrative examples of ITS system deployment and market projections.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117248828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Wen, W. D. Wong, C. Pao, J.L. Snopkowski, D. Ingram
The status of a coplanar waveguide based, novel dielectric coated, mechanically rugged, flip-chip, monolithic microwave integrated circuit (MMIC) technology will be described. This technology is ideal for low-cost, multi-chip transmit/receive (T/R) module applications. Equivalent circuit and thermal models, and the fabrication procedure of flip-chip MMICs featuring T-shaped plated silver thermal bumps will be presented along with test results obtained on components designed using these circuit element models.<>
{"title":"Coplanar waveguide based, dielectric coated flip chip monolithic microwave integrated circuit, a paradigm shift in MMIC technology","authors":"C. Wen, W. D. Wong, C. Pao, J.L. Snopkowski, D. Ingram","doi":"10.1109/MCS.1995.470976","DOIUrl":"https://doi.org/10.1109/MCS.1995.470976","url":null,"abstract":"The status of a coplanar waveguide based, novel dielectric coated, mechanically rugged, flip-chip, monolithic microwave integrated circuit (MMIC) technology will be described. This technology is ideal for low-cost, multi-chip transmit/receive (T/R) module applications. Equivalent circuit and thermal models, and the fabrication procedure of flip-chip MMICs featuring T-shaped plated silver thermal bumps will be presented along with test results obtained on components designed using these circuit element models.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"15 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120971944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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