In this article, two active filters in the X-band, using low frequency transversal and recursive principles are presented. Previously implemented in hybrid technology, those two structures are developed here using MMIC technology. In a first step, studies of the different functional blocks leading to the design of such original structures are described. Then we validate our approach with the measured results for these two filters.<>
{"title":"Microwave tunable active filter design in MMIC technology using recursive concepts","authors":"M. Delmond, L. Billonnet, B. Jarry, P. Guillon","doi":"10.1109/MCS.1995.470980","DOIUrl":"https://doi.org/10.1109/MCS.1995.470980","url":null,"abstract":"In this article, two active filters in the X-band, using low frequency transversal and recursive principles are presented. Previously implemented in hybrid technology, those two structures are developed here using MMIC technology. In a first step, studies of the different functional blocks leading to the design of such original structures are described. Then we validate our approach with the measured results for these two filters.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126027951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B.T. Agar, D.S. Bowser, K. Buer, D. Corman, C. Grondahl
A set of 16 K-band MMIC chips has been developed for the satellites in the IRIDIUM communications program. Both high power and low noise 0.25 /spl mu/m PHEMT technologies were used to develop this MMIC chip set. The MMICs consist of a broad band frequency doubler, up and down converters, high power amplifiers, variable gain amplifiers, low noise amplifiers, and an IF amplifier. A noise figure of less than 3.3 dB at 29 GHz and output power of over 4 watts at 23.3 GHz were achieved with no RF tuning. This paper describes statistical device characterization, design details, measured results, and integration of these MMIC chips into a high density multi-chip module (MCM).<>
{"title":"The IRIDIUM K-band MMIC chip set","authors":"B.T. Agar, D.S. Bowser, K. Buer, D. Corman, C. Grondahl","doi":"10.1109/MCS.1995.470999","DOIUrl":"https://doi.org/10.1109/MCS.1995.470999","url":null,"abstract":"A set of 16 K-band MMIC chips has been developed for the satellites in the IRIDIUM communications program. Both high power and low noise 0.25 /spl mu/m PHEMT technologies were used to develop this MMIC chip set. The MMICs consist of a broad band frequency doubler, up and down converters, high power amplifiers, variable gain amplifiers, low noise amplifiers, and an IF amplifier. A noise figure of less than 3.3 dB at 29 GHz and output power of over 4 watts at 23.3 GHz were achieved with no RF tuning. This paper describes statistical device characterization, design details, measured results, and integration of these MMIC chips into a high density multi-chip module (MCM).<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123020502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Tkachenko, C. Wei, J.C.M. Hwang, T. Harris, R. Grober, D. Hwang, L. Aucoin, S. Shanfield
Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests separately, in order to ascertain the reliability of these transistors under normal operating conditions.<>
{"title":"Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors","authors":"Y. Tkachenko, C. Wei, J.C.M. Hwang, T. Harris, R. Grober, D. Hwang, L. Aucoin, S. Shanfield","doi":"10.1109/MCS.1995.470978","DOIUrl":"https://doi.org/10.1109/MCS.1995.470978","url":null,"abstract":"Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests separately, in order to ascertain the reliability of these transistors under normal operating conditions.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"202 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123037526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Lester, M. Ahmadi, S. Peratoner, J. Hathaway, D. Garske, P. Chow
The authors present a 20 GHz downconverter and a 44 GHz upconverter for a low cost miniaturized transceiver for EHF SATCOM terminal applications. The hardware features a set of passivated pseudomorphic InGaAs HEMT MMICs including a 20 GHz balanced low noise amplifier and a 44 GHz 100 mW driver amplifier. The upconverter input and the LO input of the downconverter feature built-in-test (BIT) with on-chip detectors. The downconverter is packaged in a low temperature co-fired ceramic (LTCC) substrate, with integrated RF and DC interconnects, printed resistors, and a buried stripline IF filter.<>
{"title":"Low cost miniaturized EHF SATCOM transceiver featuring HEMT MMICs and LTCC multilayer packaging","authors":"J. Lester, M. Ahmadi, S. Peratoner, J. Hathaway, D. Garske, P. Chow","doi":"10.1109/MCS.1995.470996","DOIUrl":"https://doi.org/10.1109/MCS.1995.470996","url":null,"abstract":"The authors present a 20 GHz downconverter and a 44 GHz upconverter for a low cost miniaturized transceiver for EHF SATCOM terminal applications. The hardware features a set of passivated pseudomorphic InGaAs HEMT MMICs including a 20 GHz balanced low noise amplifier and a 44 GHz 100 mW driver amplifier. The upconverter input and the LO input of the downconverter feature built-in-test (BIT) with on-chip detectors. The downconverter is packaged in a low temperature co-fired ceramic (LTCC) substrate, with integrated RF and DC interconnects, printed resistors, and a buried stripline IF filter.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123890663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A single-chip transmitter/receiver MMIC operating from 1.25 to 3 GHz and incorporating most of the RF functions of a modern communication system is presented. The device incorporates: a direct vector modulator with the necessary phase shifter circuits, an output amplifier for the transmitter, a low-noise amplifier and a down-converter with image rejection. The circuit has 60 MESFETs and more than 250 passive components in a 5.0/spl times/2.4 mm chip and has been manufactured using 0.5 micron GaAs MESFET process.<>
{"title":"GaAs monolithic single-chip transceiver","authors":"A. Boveda, F. Ortigoso","doi":"10.1109/MCS.1995.470997","DOIUrl":"https://doi.org/10.1109/MCS.1995.470997","url":null,"abstract":"A single-chip transmitter/receiver MMIC operating from 1.25 to 3 GHz and incorporating most of the RF functions of a modern communication system is presented. The device incorporates: a direct vector modulator with the necessary phase shifter circuits, an output amplifier for the transmitter, a low-noise amplifier and a down-converter with image rejection. The circuit has 60 MESFETs and more than 250 passive components in a 5.0/spl times/2.4 mm chip and has been manufactured using 0.5 micron GaAs MESFET process.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115586200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A fully monolithic HBT power amplifier that has established new benchmarks for bandwidth and efficiency at X-band is reported. Power-added efficiencies of 56% max/38% min/44.4% average across 7 to 11 GHz are the highest X-band efficiencies and widest bandwidth reported for MMIC HPA's. These amplifiers have demonstrated high power levels (up to 7.3 watts) with high gain (11 to 14.1 dB) under thermally challenging long pulse (500 /spl mu/sec) high duty cycle (25%) conditions. The amplifiers were fabricated using an advanced re-aligned AlGaAs/GaAs power HBT process with a plated bathtub heat sink.<>
{"title":"5 watt high efficiency wideband 7 to 11 GHz HBT MMIC power amplifier","authors":"J. Komiak, L.W. Yang","doi":"10.1109/MCS.1995.471000","DOIUrl":"https://doi.org/10.1109/MCS.1995.471000","url":null,"abstract":"A fully monolithic HBT power amplifier that has established new benchmarks for bandwidth and efficiency at X-band is reported. Power-added efficiencies of 56% max/38% min/44.4% average across 7 to 11 GHz are the highest X-band efficiencies and widest bandwidth reported for MMIC HPA's. These amplifiers have demonstrated high power levels (up to 7.3 watts) with high gain (11 to 14.1 dB) under thermally challenging long pulse (500 /spl mu/sec) high duty cycle (25%) conditions. The amplifiers were fabricated using an advanced re-aligned AlGaAs/GaAs power HBT process with a plated bathtub heat sink.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116223072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. M. Nesbit, T. Dere, D. English, Vance Purdy, B. Parrish
This paper describes how the MMIC technology is utilized to meet the US Army's need for near term solution in minimizing fratricide in the future engagement. One of the key assembly in the Battlefield Combat Identification System (BCIS) equipment set is the Ka-band MMIC transceiver unit. The MMIC transceiver is used to transmit and receive spread spectrum signal at 38 GHz. The design, integration and test of 13 GaAs MMIC chips in a single hermetically sealed housing (2.5/spl times/2.3/spl times/0.4 inches) is presented.<>
{"title":"Ka-band MMIC-based transceiver for battlefield combat identification system","authors":"G. M. Nesbit, T. Dere, D. English, Vance Purdy, B. Parrish","doi":"10.1109/MCS.1995.470992","DOIUrl":"https://doi.org/10.1109/MCS.1995.470992","url":null,"abstract":"This paper describes how the MMIC technology is utilized to meet the US Army's need for near term solution in minimizing fratricide in the future engagement. One of the key assembly in the Battlefield Combat Identification System (BCIS) equipment set is the Ka-band MMIC transceiver unit. The MMIC transceiver is used to transmit and receive spread spectrum signal at 38 GHz. The design, integration and test of 13 GaAs MMIC chips in a single hermetically sealed housing (2.5/spl times/2.3/spl times/0.4 inches) is presented.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124896979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on the reliability of an InP-based heterojunction bipolar transistor IC technology for very high-speed and low power applications. We have performed extensive accelerated lifetest experiments under bias and temperature stress and found mean-time-to-failures (MTTF) in excess of 10/sup 7/ hours at 125/spl deg/C junction temperatures. We have also exposed our devices to a hydrogen ambient, particularly important for integrated circuits in hermetically sealed packages. We did not observe any difference in the characteristics of devices with or without exposure to hydrogen ambient. In addition we have performed extensive lifetest experiments on tantalum-nitride (TaN) thin-film resistors (TFR) used in our IC process. Our TFR reliability performance exceeded the active device reliability, as required in a reliable IC process.<>
{"title":"Reliability of InP-based HBT IC technology for high-speed, low-power applications","authors":"M. Hafizi, W. Stanchina, F. Williams, J. Jensen","doi":"10.1109/MCS.1995.470979","DOIUrl":"https://doi.org/10.1109/MCS.1995.470979","url":null,"abstract":"We report on the reliability of an InP-based heterojunction bipolar transistor IC technology for very high-speed and low power applications. We have performed extensive accelerated lifetest experiments under bias and temperature stress and found mean-time-to-failures (MTTF) in excess of 10/sup 7/ hours at 125/spl deg/C junction temperatures. We have also exposed our devices to a hydrogen ambient, particularly important for integrated circuits in hermetically sealed packages. We did not observe any difference in the characteristics of devices with or without exposure to hydrogen ambient. In addition we have performed extensive lifetest experiments on tantalum-nitride (TaN) thin-film resistors (TFR) used in our IC process. Our TFR reliability performance exceeded the active device reliability, as required in a reliable IC process.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117022153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
AN ultra low power GaAs HFET (heterojunction FET) amplifier/mixer MMIC was designed and characterized for portable communication applications in the 900 MHz band. A completely monolithic LNA (80 mil/spl times/42 mil) achieved 10 dB gain, 2.5 dB NF and -4 dBm input IP3 at an operating current of 0.5 mA @ 1.0 V. A down converter, consisting of the LNA and a dual gate FET mixer achieved -117 dBm receiver sensitivity in the 900 MHz cellular band. The total power consumption of this miniature down converter was about 2 mW. The HFET down converter IC achieved the same receiver sensitivity as a MESFET down converter at 1/5th of the power. The extremely low power dissipation, high third order intercept point, high level of integration, and very good RF performance of this monolithic IC make it an ideal candidate for wireless applications.<>
设计了一种用于900 MHz频段便携式通信的超低功耗GaAs异质结FET放大器/混频器MMIC。一个完整的单片LNA (80mil /spl倍/ 42mil)在0.5 mA @ 1.0 V的工作电流下实现了10db增益、2.5 dB NF和- 4dbm输入IP3。由LNA和双栅FET混频器组成的下变频器在900 MHz蜂窝频段内实现了-117 dBm的接收灵敏度。这个微型下变频器的总功耗约为2兆瓦。在功率为MESFET下变频1/5的情况下，HFET下变频IC实现了与MESFET下变频相同的接收器灵敏度。该单片集成电路具有极低的功耗、高三阶截距点、高集成度和非常好的射频性能，是无线应用的理想选择
{"title":"Ultra low power HFET down converter for wireless communication applications","authors":"V. Nair, S. Tehrani, R. Vaitkus, D. Scheitlin","doi":"10.1109/MCS.1995.470986","DOIUrl":"https://doi.org/10.1109/MCS.1995.470986","url":null,"abstract":"AN ultra low power GaAs HFET (heterojunction FET) amplifier/mixer MMIC was designed and characterized for portable communication applications in the 900 MHz band. A completely monolithic LNA (80 mil/spl times/42 mil) achieved 10 dB gain, 2.5 dB NF and -4 dBm input IP3 at an operating current of 0.5 mA @ 1.0 V. A down converter, consisting of the LNA and a dual gate FET mixer achieved -117 dBm receiver sensitivity in the 900 MHz cellular band. The total power consumption of this miniature down converter was about 2 mW. The HFET down converter IC achieved the same receiver sensitivity as a MESFET down converter at 1/5th of the power. The extremely low power dissipation, high third order intercept point, high level of integration, and very good RF performance of this monolithic IC make it an ideal candidate for wireless applications.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115783623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Telliez, M. Camiade, P. Savary, P. Bourne-Yaonaba
A 56.8 GHz phase locked oscillator has been developed for broadband pico-cell networks in the 62 to 53 and 65 to 66 GHz bands. A set of millimetre wave MMICs has been produced using a 0.25 /spl mu/m HEMT low noise process. A 10 MHz reference is used to stabilise the loop with the help of a low frequency synthesiser at 200 MHz and a sampler at 14.2 GHz. Within the temperature range 0 to 50/spl deg/C, the output signals delivered at 56.8 GHz are higher than the specified 6.5 dBm/spl plusmn/1.5 dB. The phase noise is better than -100 dBc/Hz at 1 MHz from carrier and lower than -70 dBc/Hz at 10 kHz from carrier. A 9 mm/sup 2/ multifunction chip incorporating three basic functions at 55.8 GHz has been implemented. This approach avoids critical connections and demonstrates the capability and maturity of our monolithic technology.<>
{"title":"Millimetre wave phase locked oscillator for mobile communication systems","authors":"I. Telliez, M. Camiade, P. Savary, P. Bourne-Yaonaba","doi":"10.1109/MCS.1995.470993","DOIUrl":"https://doi.org/10.1109/MCS.1995.470993","url":null,"abstract":"A 56.8 GHz phase locked oscillator has been developed for broadband pico-cell networks in the 62 to 53 and 65 to 66 GHz bands. A set of millimetre wave MMICs has been produced using a 0.25 /spl mu/m HEMT low noise process. A 10 MHz reference is used to stabilise the loop with the help of a low frequency synthesiser at 200 MHz and a sampler at 14.2 GHz. Within the temperature range 0 to 50/spl deg/C, the output signals delivered at 56.8 GHz are higher than the specified 6.5 dBm/spl plusmn/1.5 dB. The phase noise is better than -100 dBc/Hz at 1 MHz from carrier and lower than -70 dBc/Hz at 10 kHz from carrier. A 9 mm/sup 2/ multifunction chip incorporating three basic functions at 55.8 GHz has been implemented. This approach avoids critical connections and demonstrates the capability and maturity of our monolithic technology.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130660443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：