Summary form only given. MMIC technology has been an extremely active area of research and development for about 20 years. During the most recent six or so years, MMIC technology has matured to a level wherein literally hundreds of production parts are available from more than 30 vendor companies, worldwide. For most of this period, the dominant "market" for MMIC based products has been military end use. It has been recognized for a number of years that military markets alone will not provide sales opportunities sufficient to support the full body of MMIC vendor companies. Commercial markets for GaAs based products have been, and remain, the "hope for our future". This presentation will examine some of the decisions that dictated technological choices which underlie current MMIC design and production capability. A brief history of MMIC sales will be provided. Important aspects of GaAs MMIC materials history, progress in fabrication technology, the status, past and present, of design capability and demonstrated MMIC performance trends will be discussed. The presentation concludes with some brief personal speculations on what the future might be for our industry.<>
{"title":"GaAs MMIC technology: past, present and future","authors":"R. Bierig","doi":"10.1109/MCS.1995.471003","DOIUrl":"https://doi.org/10.1109/MCS.1995.471003","url":null,"abstract":"Summary form only given. MMIC technology has been an extremely active area of research and development for about 20 years. During the most recent six or so years, MMIC technology has matured to a level wherein literally hundreds of production parts are available from more than 30 vendor companies, worldwide. For most of this period, the dominant \"market\" for MMIC based products has been military end use. It has been recognized for a number of years that military markets alone will not provide sales opportunities sufficient to support the full body of MMIC vendor companies. Commercial markets for GaAs based products have been, and remain, the \"hope for our future\". This presentation will examine some of the decisions that dictated technological choices which underlie current MMIC design and production capability. A brief history of MMIC sales will be provided. Important aspects of GaAs MMIC materials history, progress in fabrication technology, the status, past and present, of design capability and demonstrated MMIC performance trends will be discussed. The presentation concludes with some brief personal speculations on what the future might be for our industry.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124229717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new technique for obtaining high RF/LO to IF isolations in microwave mixers is reported. The technique is derived from the concepts of transversal filtering and distributed mixing. An MMIC prototype has been developed which measures only 1.4 mm/spl times/1.3 mm. Over 30 dB of RF/LO to IF isolations have been achieved at X-band and Ku-band.<>
{"title":"A new technique for obtaining high isolations in microwave mixers based on the concepts of distributed mixing and transversal filtering","authors":"A. Baree, I. Robertson","doi":"10.1109/MCS.1995.470956","DOIUrl":"https://doi.org/10.1109/MCS.1995.470956","url":null,"abstract":"A new technique for obtaining high RF/LO to IF isolations in microwave mixers is reported. The technique is derived from the concepts of transversal filtering and distributed mixing. An MMIC prototype has been developed which measures only 1.4 mm/spl times/1.3 mm. Over 30 dB of RF/LO to IF isolations have been achieved at X-band and Ku-band.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114536711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Brucher, P. Meunier, C. Cénac, B. Jarry, P. Guillon
In this article, GaAs MMIC negative resistance chips are presented. These devices are used to improve the performances of planar microstrip resonator structures. The broadband capabilities of these negative resistance circuits are illustrated with their use to compensate for the losses of two 4-pole bandpass microstrip half wave filters designed with alumina substrate and centered respectively at 1.5 GHz and 4 GHz. Finally, experimental results of bandstop active filters built on lossy high permittivity dielectric substrate (/spl epsi//sub r/=36) and also compensated for with these monolithic circuits confirm their potential.<>
{"title":"Broadband and tunable negative monolithic circuits for microwave active filters compensation","authors":"A. Brucher, P. Meunier, C. Cénac, B. Jarry, P. Guillon","doi":"10.1109/MCS.1995.470955","DOIUrl":"https://doi.org/10.1109/MCS.1995.470955","url":null,"abstract":"In this article, GaAs MMIC negative resistance chips are presented. These devices are used to improve the performances of planar microstrip resonator structures. The broadband capabilities of these negative resistance circuits are illustrated with their use to compensate for the losses of two 4-pole bandpass microstrip half wave filters designed with alumina substrate and centered respectively at 1.5 GHz and 4 GHz. Finally, experimental results of bandstop active filters built on lossy high permittivity dielectric substrate (/spl epsi//sub r/=36) and also compensated for with these monolithic circuits confirm their potential.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121060192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper describes a monolithic bandpass filter using lumped L-C resonators with single transistor negative resistance elements. The measured response of the filter exhibits a 400 MHz 3 dB-bandwidth centered on 4.7 GHz, and has 0 dB insertion loss with only /spl plusmn/0.1 dB ripple in the pass-band.<>
{"title":"MMIC active bandpass filter using negative resistance elements","authors":"U. Garacaoglu, I. Robertson","doi":"10.1109/MCS.1995.470965","DOIUrl":"https://doi.org/10.1109/MCS.1995.470965","url":null,"abstract":"This paper describes a monolithic bandpass filter using lumped L-C resonators with single transistor negative resistance elements. The measured response of the filter exhibits a 400 MHz 3 dB-bandwidth centered on 4.7 GHz, and has 0 dB insertion loss with only /spl plusmn/0.1 dB ripple in the pass-band.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125318911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper describes a planar MMIC HBT Schottky diode mixer utilizing novel baluns fabricated on a 4 mil thick GaAs substrate. The balun is based on the Marchand balun structure and is implemented in a microstrip environment. The balun structure consists of 7 closely coupled microstrip lines and backside vias. Four 10/spl times/10 /spl mu/m/sup 2/ HBT Schottky diodes in a star configuration provide the mixing function. The HBT diodes have cut-off frequencies in excess of 750 GHz. The mixer achieves 8-10 dB conversion loss and very low spurious responses over a 26-40 GHz RF and LO bandwidth and DC-11 GHz IF. This IF bandwidth is broader than a previously demonstrated CPW star mixer using InGaAs HEMT technology, and easier to integrate into an assembly due to its microstrip implementation.<>
{"title":"A monolithic broadband doubly balanced EHF HBT star mixer with novel microstrip baluns","authors":"Y. Ryu, K. Kobayashi, A. Oki","doi":"10.1109/MCS.1995.470969","DOIUrl":"https://doi.org/10.1109/MCS.1995.470969","url":null,"abstract":"This paper describes a planar MMIC HBT Schottky diode mixer utilizing novel baluns fabricated on a 4 mil thick GaAs substrate. The balun is based on the Marchand balun structure and is implemented in a microstrip environment. The balun structure consists of 7 closely coupled microstrip lines and backside vias. Four 10/spl times/10 /spl mu/m/sup 2/ HBT Schottky diodes in a star configuration provide the mixing function. The HBT diodes have cut-off frequencies in excess of 750 GHz. The mixer achieves 8-10 dB conversion loss and very low spurious responses over a 26-40 GHz RF and LO bandwidth and DC-11 GHz IF. This IF bandwidth is broader than a previously demonstrated CPW star mixer using InGaAs HEMT technology, and easier to integrate into an assembly due to its microstrip implementation.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115119692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Muraguchi, M. Nakatsugawa, H. Hayashi, M. Aikawa
An ultra low power consumption amplifier chip set for the 1.9 GHz Japanese Personal Handy-phone System (PHS) is presented. The chip set includes a linear power amplifier, a driver amplifier, and an LO switch amplifier. These amplifiers use Cascode FETs that provide low phase distortion, high gain, and low current operation. The power amplifier uses a new concept of a self-phase distortion compensation to achieve a record performance of 45% power added efficiency with sufficient linearity. The driver amplifier has a gain of 13.5 dB with a low power consumption of 3 mW (1 mA, 3 V). The LO switch amplifier is a new MMIC that has both switch and buffer amplifier functions. The switch amplifier has an output power of 3 dBm, a forward gain of 15 dB, and a reverse isolation of 35 dB with a low power consumption of 6 mW (2 mA, 3 V).<>
{"title":"A 1.9 GHz-band ultra low power consumption amplifier chip set for personal communications","authors":"M. Muraguchi, M. Nakatsugawa, H. Hayashi, M. Aikawa","doi":"10.1109/MCS.1995.470971","DOIUrl":"https://doi.org/10.1109/MCS.1995.470971","url":null,"abstract":"An ultra low power consumption amplifier chip set for the 1.9 GHz Japanese Personal Handy-phone System (PHS) is presented. The chip set includes a linear power amplifier, a driver amplifier, and an LO switch amplifier. These amplifiers use Cascode FETs that provide low phase distortion, high gain, and low current operation. The power amplifier uses a new concept of a self-phase distortion compensation to achieve a record performance of 45% power added efficiency with sufficient linearity. The driver amplifier has a gain of 13.5 dB with a low power consumption of 3 mW (1 mA, 3 V). The LO switch amplifier is a new MMIC that has both switch and buffer amplifier functions. The switch amplifier has an output power of 3 dBm, a forward gain of 15 dB, and a reverse isolation of 35 dB with a low power consumption of 6 mW (2 mA, 3 V).<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121259475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Huang, W. Jones, A. Oki, D. Streit, W. Yamasaki, P. Liu, S. Bui, B. Nelson
A novel 9-16 GHz monolithic HEMT low noise amplifier with on-chip limiters has been designed, fabricated, and measured. This paper presents the design topology, the new fabrication technology, and the on-wafer measurements of this circuit. The limiter consists of one PIN diode and one Schottky diode. The low noise amplifier itself is a single stage balanced amplifier with one limiter embedded in each single-ended amplifier.<>
{"title":"A 9-16 GHz monolithic HEMT low noise amplifier with embedded limiters","authors":"P. Huang, W. Jones, A. Oki, D. Streit, W. Yamasaki, P. Liu, S. Bui, B. Nelson","doi":"10.1109/MCS.1995.470962","DOIUrl":"https://doi.org/10.1109/MCS.1995.470962","url":null,"abstract":"A novel 9-16 GHz monolithic HEMT low noise amplifier with on-chip limiters has been designed, fabricated, and measured. This paper presents the design topology, the new fabrication technology, and the on-wafer measurements of this circuit. The limiter consists of one PIN diode and one Schottky diode. The low noise amplifier itself is a single stage balanced amplifier with one limiter embedded in each single-ended amplifier.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116359677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Lo, K. Chang, R. Lin, E. Lin, H. Wang, M. Biedenbender, G. Dow, B. Allen
We have demonstrated the first monolithic W-band transceiver with front-end switching receiver for FMCW radar application. The switching receiver utilizes a novel balanced switching low noise amplifier for switching function and has achieved a conversion gain of 5.4 dB and 10 dB isolation. By operating the MMIC as a heterodyne receiver, we achieved a noise figure at 1 MHz IF of 8 dB which is lower than that of the previous reported single-chip W-band homodyne transceivers.<>
{"title":"A single-chip W-band transceiver with front-end switching receiver for FMCW radar applications","authors":"D. Lo, K. Chang, R. Lin, E. Lin, H. Wang, M. Biedenbender, G. Dow, B. Allen","doi":"10.1109/MCS.1995.470952","DOIUrl":"https://doi.org/10.1109/MCS.1995.470952","url":null,"abstract":"We have demonstrated the first monolithic W-band transceiver with front-end switching receiver for FMCW radar application. The switching receiver utilizes a novel balanced switching low noise amplifier for switching function and has achieved a conversion gain of 5.4 dB and 10 dB isolation. By operating the MMIC as a heterodyne receiver, we achieved a noise figure at 1 MHz IF of 8 dB which is lower than that of the previous reported single-chip W-band homodyne transceivers.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"1 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114040482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. P. Torres, F. Fortes, M. Joao Rosario, J. Dieudonné, J. Costa Freire
In this paper the design of singly balanced mixers to convert C to V band signals are presented. A step by step design technique is described, based on harmonic balance simulations. The mixer devices are Schottky diodes compatible with a GaAs MESFET technology. The mixer was optimised for minimum conversion losses on the widest possible bandwidth when used as an up or downconverter in order to be used on a large number of applications. The experiments show a minimum conversion losses on the range of 6 to 8 dB for both applications (up and downconverter) and a 3 dB bandwidth larger then 6 GHz.<>
{"title":"Monolithic mixers with MESFETs technology to up and down convert between C and V band","authors":"J. P. Torres, F. Fortes, M. Joao Rosario, J. Dieudonné, J. Costa Freire","doi":"10.1109/MCS.1995.470966","DOIUrl":"https://doi.org/10.1109/MCS.1995.470966","url":null,"abstract":"In this paper the design of singly balanced mixers to convert C to V band signals are presented. A step by step design technique is described, based on harmonic balance simulations. The mixer devices are Schottky diodes compatible with a GaAs MESFET technology. The mixer was optimised for minimum conversion losses on the widest possible bandwidth when used as an up or downconverter in order to be used on a large number of applications. The experiments show a minimum conversion losses on the range of 6 to 8 dB for both applications (up and downconverter) and a 3 dB bandwidth larger then 6 GHz.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122796877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Kother, B. Hopf, T. Sporkmann, I. Wolff, S. Kosslowski
Circulators can be used to separate transmit/receive (T/R) signals and for two-port tuners. Conventional ferrite devices are not applicable for MMICs. Two new types of electronic circulators are presented in this paper covering the frequency range from 1.8 GHz up to 80 GHz.<>
{"title":"New types of MMIC circulators","authors":"D. Kother, B. Hopf, T. Sporkmann, I. Wolff, S. Kosslowski","doi":"10.1109/MCS.1995.470951","DOIUrl":"https://doi.org/10.1109/MCS.1995.470951","url":null,"abstract":"Circulators can be used to separate transmit/receive (T/R) signals and for two-port tuners. Conventional ferrite devices are not applicable for MMICs. Two new types of electronic circulators are presented in this paper covering the frequency range from 1.8 GHz up to 80 GHz.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116694666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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