Pub Date : 1990-06-11DOI: 10.1109/PESC.1990.131227
A. Lamantia, P. Maranesi, L. Radrizzani
A description of the small-signal dynamics of the Cockcroft-Walton voltage multiplier is obtained through state-space modeling in discrete time. Its small-signal equivalent circuit is a two-port linear network whose four transfer functions are expressed in the z-transform domain. General formulae for the multiplier with an arbitrary number of cells are derived; expressions for prime parameters such as the cut-off frequency, gain, and output resistance are given, and frequency dependences of module and phases are plotted.<>
{"title":"The dynamics of the Cockcroft-Walton voltage multiplier","authors":"A. Lamantia, P. Maranesi, L. Radrizzani","doi":"10.1109/PESC.1990.131227","DOIUrl":"https://doi.org/10.1109/PESC.1990.131227","url":null,"abstract":"A description of the small-signal dynamics of the Cockcroft-Walton voltage multiplier is obtained through state-space modeling in discrete time. Its small-signal equivalent circuit is a two-port linear network whose four transfer functions are expressed in the z-transform domain. General formulae for the multiplier with an arbitrary number of cells are derived; expressions for prime parameters such as the cut-off frequency, gain, and output resistance are given, and frequency dependences of module and phases are plotted.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121521467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-11DOI: 10.1109/PESC.1990.131266
H. Saotome, Y. Takahashi
Two gate drive units have been developed for use with 2.5 kV-2kA or 4.5 kV-3 kA reverse conducting gate turn-off (GTO) thyristors connected in series. Some technical problems connected with driving GTO-thyristor series-connected modules are clarified. New circuits for realizing indirect optical GTO-thyristor drive, constant on-gate current output, and protection of the gate drive units against GTO-thyristor failure have been designed.<>
{"title":"Gate drive circuits for high voltage, large current GTO-thyristors connected in series","authors":"H. Saotome, Y. Takahashi","doi":"10.1109/PESC.1990.131266","DOIUrl":"https://doi.org/10.1109/PESC.1990.131266","url":null,"abstract":"Two gate drive units have been developed for use with 2.5 kV-2kA or 4.5 kV-3 kA reverse conducting gate turn-off (GTO) thyristors connected in series. Some technical problems connected with driving GTO-thyristor series-connected modules are clarified. New circuits for realizing indirect optical GTO-thyristor drive, constant on-gate current output, and protection of the gate drive units against GTO-thyristor failure have been designed.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122274813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-11DOI: 10.1109/PESC.1990.131182
P. Spirito, A. Strollo, A. Caruso
The on-state and off-state behavior of a bipolar mode JFET device is analyzed by using a detailed 2-D numerical simulation. The numerical results show that the device has basically two modes of operation, namely a unipolar mode of operation when the gate bias is less than 0.4 V and a bipolar mode of operation when gate voltage allows a significant injection of minority carrier into the channel. The analysis clearly shows the role played by the conductivity modulation in changing the shape of the I-V curve from the triode-like shape to the transistorlike one, as well as the influence of the most significant structure parameters on the electrical performance of the device. The transition between the unipolar mode of operation and the bipolar one is governed by the minority carrier concentration in the channel, and this transition is also responsible for the change in shape of the output I-V curves. All the relevant features of the I-V curves belonging to the unipolar and the bipolar regimes are observed and explained in the numerical analysis, in particular, the transition between the exponential and linear drain voltage dependence of the current in the unipolar operation and the very low on-resistance below the knee in the bipolar operation.<>
{"title":"Analysis of a power bipolar-mode JFET device by two-dimensional numerical simulation","authors":"P. Spirito, A. Strollo, A. Caruso","doi":"10.1109/PESC.1990.131182","DOIUrl":"https://doi.org/10.1109/PESC.1990.131182","url":null,"abstract":"The on-state and off-state behavior of a bipolar mode JFET device is analyzed by using a detailed 2-D numerical simulation. The numerical results show that the device has basically two modes of operation, namely a unipolar mode of operation when the gate bias is less than 0.4 V and a bipolar mode of operation when gate voltage allows a significant injection of minority carrier into the channel. The analysis clearly shows the role played by the conductivity modulation in changing the shape of the I-V curve from the triode-like shape to the transistorlike one, as well as the influence of the most significant structure parameters on the electrical performance of the device. The transition between the unipolar mode of operation and the bipolar one is governed by the minority carrier concentration in the channel, and this transition is also responsible for the change in shape of the output I-V curves. All the relevant features of the I-V curves belonging to the unipolar and the bipolar regimes are observed and explained in the numerical analysis, in particular, the transition between the exponential and linear drain voltage dependence of the current in the unipolar operation and the very low on-resistance below the knee in the bipolar operation.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116586300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-11DOI: 10.1109/PESC.1990.131190
R. D. De Doncker, G. Venkataramanan
A resonant boost rectifier is analyzed. The primary goal of the circuit is to produce single-phase AC line currents with very low harmonic distortion at unity power factor, thereby eliminating or reducing the size of filter components. The single-phase AC-to-DC converter consists of a boost-rectifier line conditioner connected to a resonant DC link bus. This enables zero-voltage soft switching operation of all the power devices, allowing the circuit to operate at high switching frequencies (up to 100 kHz) at high power levels (3 kW and above). The boost switch can be turned on or off at the zero voltage instants of the resonant DC link. As with resonant DC link converters, the amplitude of the AC input line current is modulated by discrete pulse modulation (DPM) of the resonant bus voltage. Furthermore, PWM (pulse width modulation) control at 100 kHz of the AC line currents can be obtained with little penalty on the system efficiency. This resonant boost rectifier is simple and reliable, achieves a high waveform quality, and operates very efficiently.<>
{"title":"A new single phase AC to DC zero voltage soft switching converter","authors":"R. D. De Doncker, G. Venkataramanan","doi":"10.1109/PESC.1990.131190","DOIUrl":"https://doi.org/10.1109/PESC.1990.131190","url":null,"abstract":"A resonant boost rectifier is analyzed. The primary goal of the circuit is to produce single-phase AC line currents with very low harmonic distortion at unity power factor, thereby eliminating or reducing the size of filter components. The single-phase AC-to-DC converter consists of a boost-rectifier line conditioner connected to a resonant DC link bus. This enables zero-voltage soft switching operation of all the power devices, allowing the circuit to operate at high switching frequencies (up to 100 kHz) at high power levels (3 kW and above). The boost switch can be turned on or off at the zero voltage instants of the resonant DC link. As with resonant DC link converters, the amplitude of the AC input line current is modulated by discrete pulse modulation (DPM) of the resonant bus voltage. Furthermore, PWM (pulse width modulation) control at 100 kHz of the AC line currents can be obtained with little penalty on the system efficiency. This resonant boost rectifier is simple and reliable, achieves a high waveform quality, and operates very efficiently.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114802770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-11DOI: 10.1109/PESC.1990.131272
F. Petruzziello, P. Ziogas, G. Joós
The demand for power supplies with expansion capabilities has prompted interest in modular power converters with built-in features for connection in parallel with two or more other units. The authors describe a novel scheme which offers a given unit frequency and phase synchronization with any number of units operating in parallel. The scheme is based on a master/slave configuration using a rotating priority window which provides random selection of a new master and therefore results in true redundancy. Compared to conventional methods of paralleling, the scheme requires fewer interconnections between individual units and offers increased reliability. System operation and implementation are described in detail, and experimental results are given.<>
{"title":"A novel approach to paralleling of power converter units with true redundancy","authors":"F. Petruzziello, P. Ziogas, G. Joós","doi":"10.1109/PESC.1990.131272","DOIUrl":"https://doi.org/10.1109/PESC.1990.131272","url":null,"abstract":"The demand for power supplies with expansion capabilities has prompted interest in modular power converters with built-in features for connection in parallel with two or more other units. The authors describe a novel scheme which offers a given unit frequency and phase synchronization with any number of units operating in parallel. The scheme is based on a master/slave configuration using a rotating priority window which provides random selection of a new master and therefore results in true redundancy. Compared to conventional methods of paralleling, the scheme requires fewer interconnections between individual units and offers increased reliability. System operation and implementation are described in detail, and experimental results are given.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116245896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-11DOI: 10.1109/PESC.1990.131217
Horst Gruning, H. D. Lambilly, K. Lilja
The steady-state and switching behaviour of field-controlled thyristors (FCTh) have been analyzed by 2D simulation and experiment. By means of a low inductive drive, very fast turn-on ( tau /sub on/ approximately=80 ns) and turn-off (t/sub st/>
{"title":"Snubberless superfast high power module using MOS driven field controlled thyristors","authors":"Horst Gruning, H. D. Lambilly, K. Lilja","doi":"10.1109/PESC.1990.131217","DOIUrl":"https://doi.org/10.1109/PESC.1990.131217","url":null,"abstract":"The steady-state and switching behaviour of field-controlled thyristors (FCTh) have been analyzed by 2D simulation and experiment. By means of a low inductive drive, very fast turn-on ( tau /sub on/ approximately=80 ns) and turn-off (t/sub st/<or=100 ns, t/sub R/<or=100 ns) were achieved even with 2.5 kV/200 A devices. Effects improving the current distribution homogeneity during transients led to an extremely wide SOA (1600 V, 190 A/cm/sup 2/), a linear scaling behavior, and an excellent predictability by single cell simulation (better than 5% for a 800 V, 100 A/cm/sup 2/ turn-off). Thus, FCThs perform well for hard-switched and for resonant applications, showing excellent on-state versus switching loss tradeoff, diodelike turn-on and commutation, and pronounced reduction of switching loss at limited dV/sub A//dt. Ease of control is obtained through hybrid technology: a 200 A/2 kV MOS input FCTh module is presented.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123107581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-11DOI: 10.1109/PESC.1990.131246
F. Dezza, R. Manigrasso, G. S. Furga
It is suggested that future development of power converter and electric drive design as a part of a system must take into account management problems. In this framework, a possible evolution of an electronically driven traction unit design is presented as a consequence of computer-integrated management systems, with special reference to the following parts of the mobile unit: (1) the data transmission network; (2) resident diagnostics using expert systems; and (3) drive controllers using expert systems. It is concluded that computer-integrated management systems to perform diagnostics and to track the life of a park of electronically driven mobile units now can be implemented using expert system development programs.<>
{"title":"Computer integrated management system for a park of electronically driven mobile units","authors":"F. Dezza, R. Manigrasso, G. S. Furga","doi":"10.1109/PESC.1990.131246","DOIUrl":"https://doi.org/10.1109/PESC.1990.131246","url":null,"abstract":"It is suggested that future development of power converter and electric drive design as a part of a system must take into account management problems. In this framework, a possible evolution of an electronically driven traction unit design is presented as a consequence of computer-integrated management systems, with special reference to the following parts of the mobile unit: (1) the data transmission network; (2) resident diagnostics using expert systems; and (3) drive controllers using expert systems. It is concluded that computer-integrated management systems to perform diagnostics and to track the life of a park of electronically driven mobile units now can be implemented using expert system development programs.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"354 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122337235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-11DOI: 10.1109/PESC.1990.131236
F. Franck, D. Schroder
The state plane technique is used to develop a design-specification procedure that enables the designer to directly calculate the stresses on all elements of the different topologies for quasi-resonant power converters. If parasitic elements are considered, multiresonant topologies are obtained. These topologies can be calculated for the design specification if the procedure for quasi-resonant topologies is adapted to this situation. A novel theoretical approach for describing the internal behavior of multiresonant power converters and for visualizing the switching conditions and the points of maximum component stresses is proposed. The multiresonant switching technique combines two advantages: the lossless snubbing of both the transistor and the diode is achieved by only three reactive elements, and a controllable no-load operation is possible. This analysis procedure is well suited for calculating DC-DC power converter with an output power up to several hundred watts.<>
{"title":"A contribution to the design specification of single-cell multi-resonant converters","authors":"F. Franck, D. Schroder","doi":"10.1109/PESC.1990.131236","DOIUrl":"https://doi.org/10.1109/PESC.1990.131236","url":null,"abstract":"The state plane technique is used to develop a design-specification procedure that enables the designer to directly calculate the stresses on all elements of the different topologies for quasi-resonant power converters. If parasitic elements are considered, multiresonant topologies are obtained. These topologies can be calculated for the design specification if the procedure for quasi-resonant topologies is adapted to this situation. A novel theoretical approach for describing the internal behavior of multiresonant power converters and for visualizing the switching conditions and the points of maximum component stresses is proposed. The multiresonant switching technique combines two advantages: the lossless snubbing of both the transistor and the diode is achieved by only three reactive elements, and a controllable no-load operation is possible. This analysis procedure is well suited for calculating DC-DC power converter with an output power up to several hundred watts.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132676534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-11DOI: 10.1109/PESC.1990.131267
W. Tabisz, F. Lee, D. Chen
A resonant synchronous rectifier which combines the fast switching of Schottky diodes with low conduction drop of MOSFET devices is discussed. The MOSFET devices are driven in a resonant fashion by the power circuit, resulting in partial recovery of the energy stored in the parasitic capacitances. Power loss in the resonant synchronous rectifier is determined as a function of various devices parameters and switching frequency. Contributions of conduction losses, gate-drive switching losses, and losses due to current circulating in the parasitic capacitances are discussed. The analysis indicates that, at megahertz range switching frequencies, a resonant synchronous rectifier has a significantly higher efficiency than either a PWM (pulse width modulation) synchronous rectifier or a Schottky diode rectifier.<>
{"title":"A MOSFET resonant synchronous rectifier for high-frequency DC/DC converters","authors":"W. Tabisz, F. Lee, D. Chen","doi":"10.1109/PESC.1990.131267","DOIUrl":"https://doi.org/10.1109/PESC.1990.131267","url":null,"abstract":"A resonant synchronous rectifier which combines the fast switching of Schottky diodes with low conduction drop of MOSFET devices is discussed. The MOSFET devices are driven in a resonant fashion by the power circuit, resulting in partial recovery of the energy stored in the parasitic capacitances. Power loss in the resonant synchronous rectifier is determined as a function of various devices parameters and switching frequency. Contributions of conduction losses, gate-drive switching losses, and losses due to current circulating in the parasitic capacitances are discussed. The analysis indicates that, at megahertz range switching frequencies, a resonant synchronous rectifier has a significantly higher efficiency than either a PWM (pulse width modulation) synchronous rectifier or a Schottky diode rectifier.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127901125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1990-06-11DOI: 10.1109/PESC.1990.131254
R. S. Colby, A.K. Simlot, M.A. Hallouda
Blanking time in PWM (pulse width modulation) inverter switching is known to cause distortion of the AC voltage waveform and can induce instability in induction motors. A fundamental component equivalent circuit of the inverter in which the effect of the waveform distortion is represented as an equivalent source resistance is derived. The added resistance is shown to be the cause of instability. The equivalent circuit is shown to be useful in predicting the current and speed waveforms of induction motors fed by PWM inverters. This circuit is useful for simulating the effect of the blanking time, and requires far less computation than a full PWM inverter model. A simple corrective measure that adds an offset to the PWM reference signal according to the polarity of the load current is described. The compensation corrects the distortion due to the blanking time, and reduces the rotor oscillations due to the motor instability.<>
{"title":"Simplified model and corrective measures for induction motor instability caused by PWM inverter blanking time","authors":"R. S. Colby, A.K. Simlot, M.A. Hallouda","doi":"10.1109/PESC.1990.131254","DOIUrl":"https://doi.org/10.1109/PESC.1990.131254","url":null,"abstract":"Blanking time in PWM (pulse width modulation) inverter switching is known to cause distortion of the AC voltage waveform and can induce instability in induction motors. A fundamental component equivalent circuit of the inverter in which the effect of the waveform distortion is represented as an equivalent source resistance is derived. The added resistance is shown to be the cause of instability. The equivalent circuit is shown to be useful in predicting the current and speed waveforms of induction motors fed by PWM inverters. This circuit is useful for simulating the effect of the blanking time, and requires far less computation than a full PWM inverter model. A simple corrective measure that adds an offset to the PWM reference signal according to the polarity of the load current is described. The compensation corrects the distortion due to the blanking time, and reduces the rotor oscillations due to the motor instability.<<ETX>>","PeriodicalId":330807,"journal":{"name":"21st Annual IEEE Conference on Power Electronics Specialists","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121141250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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