Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327485
A. Cova
Widespread acceptance of CDMA technology has paved the way for the deployment of 3G networks that will offer a multitude of enhanced services such as high-speed packet data and multimedia. The complexity of 3G networks is remarkable and imposes notable design challenges to satisfy stringent performance requirements at the system and subsystem levels. One key aspect in a successful design is the use of CAD tools to optimize the performance of the network at different complexity levels. This paper describes a custom CAD tool for the modeling and simulation of 3G power amplification subsystems.
{"title":"Modeling and Simulation of 3G Power Amplification Subsystems","authors":"A. Cova","doi":"10.1109/ARFTG.2001.327485","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327485","url":null,"abstract":"Widespread acceptance of CDMA technology has paved the way for the deployment of 3G networks that will offer a multitude of enhanced services such as high-speed packet data and multimedia. The complexity of 3G networks is remarkable and imposes notable design challenges to satisfy stringent performance requirements at the system and subsystem levels. One key aspect in a successful design is the use of CAD tools to optimize the performance of the network at different complexity levels. This paper describes a custom CAD tool for the modeling and simulation of 3G power amplification subsystems.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122875111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327496
P. Roblin
This paper presents a new approach for the electro-thermal characterization and modeling of LDMOSFETs without using pulsed-IV and pulsed-RF measurement data. The characterization method, which relies on an infrared thermometer to measure the device surface temperature, automatically follows the constant LDMOSFET power contours in order to efficiently acquire in a single sweep of the substrate temperature the targeted iso-thermal IV and microwave measurements. The comparison of the acquired iso-thermal IV's with pulsed-IVs and also with the extracted microwave gm reveals the presence of a relatively small low-frequency dispersion in LDMOSFETS. The temperature and bias dependence of the equivalent circuit model parameters is extracted from the small-signal microwave data acquired. Optimized tensor-product B-splines that distribute knots to minimize fitting errors are then used to represent the equivalent-circuit model parameters and extract the large signal model as a function of voltages and temperature. The accuracy of this measurement-based LDMOSFET model which is implemented in ADS is then verified by comparing the simulated and measured harmonic and IMD large-signal response of a power amplifier.
{"title":"Measurement Based Electro-Thermal Modeling of LDMOSFETs","authors":"P. Roblin","doi":"10.1109/ARFTG.2001.327496","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327496","url":null,"abstract":"This paper presents a new approach for the electro-thermal characterization and modeling of LDMOSFETs without using pulsed-IV and pulsed-RF measurement data. The characterization method, which relies on an infrared thermometer to measure the device surface temperature, automatically follows the constant LDMOSFET power contours in order to efficiently acquire in a single sweep of the substrate temperature the targeted iso-thermal IV and microwave measurements. The comparison of the acquired iso-thermal IV's with pulsed-IVs and also with the extracted microwave gm reveals the presence of a relatively small low-frequency dispersion in LDMOSFETS. The temperature and bias dependence of the equivalent circuit model parameters is extracted from the small-signal microwave data acquired. Optimized tensor-product B-splines that distribute knots to minimize fitting errors are then used to represent the equivalent-circuit model parameters and extract the large signal model as a function of voltages and temperature. The accuracy of this measurement-based LDMOSFET model which is implemented in ADS is then verified by comparing the simulated and measured harmonic and IMD large-signal response of a power amplifier.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127278281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327500
P. Tasker
Integration of an NLVNA measurement system with appropriate arbitrary waveform voltage stimuli hardware provides for large signal measurements that can be used to both verify and extract conventional transistor non-linear models. As a verification tool, they can be used not only to quantify model accuracy but also to aid directly in identifying model problems and deficiencies. In model generation they can be used as a replacement for bias dependent small signal s-parameters during model extraction/optimisation. Alternatively, if properly selected these voltage stimuli can be transformed directly into the required state-functions.
{"title":"Conventional Transistor Non-Linear Model Extraction/Verification using Time Domain Microwave Waveform Measurements","authors":"P. Tasker","doi":"10.1109/ARFTG.2001.327500","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327500","url":null,"abstract":"Integration of an NLVNA measurement system with appropriate arbitrary waveform voltage stimuli hardware provides for large signal measurements that can be used to both verify and extract conventional transistor non-linear models. As a verification tool, they can be used not only to quantify model accuracy but also to aid directly in identifying model problems and deficiencies. In model generation they can be used as a replacement for bias dependent small signal s-parameters during model extraction/optimisation. Alternatively, if properly selected these voltage stimuli can be transformed directly into the required state-functions.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120861367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：