Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2021-3-2-60-86
A. Melker
{"title":"Nuclear Geometry: from Silicon to Argon","authors":"A. Melker","doi":"10.17586/2687-0568-2021-3-2-60-86","DOIUrl":"https://doi.org/10.17586/2687-0568-2021-3-2-60-86","url":null,"abstract":"","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120916282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2023-5-1-10-15
A.A. Kundius, K.R. Razzhivina, D. Shiryaev, I. S. Polukhin, V. Bougrov
This work presents an optical transmitting module operating in the near-infrared wavelength range for the organization of a wireless service channel in an atmospheric optical quantum communication channel. The main characteristics were measured to demonstrate the functionality of the module and to assess the quality of the transmitted signal, such as the values of the error vector magnitude and the eye diagram opening level. It was determined that the transmitting module can operate at symbol rates up to 5 GBaud. In addition, the optimal signal modulation parameters were found and the possible bit rate of data transmission in the atmospheric optical communication channel was estimated: a QPSK-modulated signal with a carrier frequency of 80 MHz and a symbol rate of 50 MBaud allowed to get a bit rate of 100 Mbit/s with an EVM value of 14%.
{"title":"Near-Infrared Optical Transmitting Module for Service Channel of Atmospheric Quantum Communication Line","authors":"A.A. Kundius, K.R. Razzhivina, D. Shiryaev, I. S. Polukhin, V. Bougrov","doi":"10.17586/2687-0568-2023-5-1-10-15","DOIUrl":"https://doi.org/10.17586/2687-0568-2023-5-1-10-15","url":null,"abstract":"This work presents an optical transmitting module operating in the near-infrared wavelength range for the organization of a wireless service channel in an atmospheric optical quantum communication channel. The main characteristics were measured to demonstrate the functionality of the module and to assess the quality of the transmitted signal, such as the values of the error vector magnitude and the eye diagram opening level. It was determined that the transmitting module can operate at symbol rates up to 5 GBaud. In addition, the optimal signal modulation parameters were found and the possible bit rate of data transmission in the atmospheric optical communication channel was estimated: a QPSK-modulated signal with a carrier frequency of 80 MHz and a symbol rate of 50 MBaud allowed to get a bit rate of 100 Mbit/s with an EVM value of 14%.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123789776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2021-3-1-96-126
S. Krasnitckii, M. Gutkin
In the review, the up-to-date theoretical research of various aspects of void evolution problem in hollow crystalline micro- and nanostructures is summarized. A classification of hollow architectures of micro- and nanostructures distinguishing the main procedures of void (pore) production as well as the influence of the voids on functional properties of the devices based on hollow structures, is suggested. The factors responsible for the void evolution process are discussed. Finally, theoretical models of the void evolution describing shrinkage and growth processes in particles of various structures are considered in terms of kinetics and thermodynamics concepts.
{"title":"Review on Theoretical Models of Void Evolution in Crystalline Particles","authors":"S. Krasnitckii, M. Gutkin","doi":"10.17586/2687-0568-2021-3-1-96-126","DOIUrl":"https://doi.org/10.17586/2687-0568-2021-3-1-96-126","url":null,"abstract":"In the review, the up-to-date theoretical research of various aspects of void evolution problem in hollow crystalline micro- and nanostructures is summarized. A classification of hollow architectures of micro- and nanostructures distinguishing the main procedures of void (pore) production as well as the influence of the voids on functional properties of the devices based on hollow structures, is suggested. The factors responsible for the void evolution process are discussed. Finally, theoretical models of the void evolution describing shrinkage and growth processes in particles of various structures are considered in terms of kinetics and thermodynamics concepts.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126197610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2023-5-1-16-21
M. Nikitina, A. Bazhenov
In this work, we consider an Ising model which allows spin-spin interaction in the systems. We assume that two-level quantum systems are randomly located in N nodes of a complex annealed scale-free network described by the Barabasi-Albert model. It is defined by the power-law degree distribution of nodes. We consider the mean-field approach to the system described by the Ising Hamiltonian. At a certain level, the system is totally characterized by the order parameter Sz. It contains a critical inverse temperature β, which depends on parameter ζ2 as the ratio of the second to the first moment of the degree distribution. We have found that for ζ2, that exceeds its critical value ζ2,c, high temperature phase transition occurs that can be explained by the hubs and clusters which appear in scale-free networks.
{"title":"Phase Transitions in Ising Model Defined on Complex Networks","authors":"M. Nikitina, A. Bazhenov","doi":"10.17586/2687-0568-2023-5-1-16-21","DOIUrl":"https://doi.org/10.17586/2687-0568-2023-5-1-16-21","url":null,"abstract":"In this work, we consider an Ising model which allows spin-spin interaction in the systems. We assume that two-level quantum systems are randomly located in N nodes of a complex annealed scale-free network described by the Barabasi-Albert model. It is defined by the power-law degree distribution of nodes. We consider the mean-field approach to the system described by the Ising Hamiltonian. At a certain level, the system is totally characterized by the order parameter Sz. It contains a critical inverse temperature β, which depends on parameter ζ2 as the ratio of the second to the first moment of the degree distribution. We have found that for ζ2, that exceeds its critical value ζ2,c, high temperature phase transition occurs that can be explained by the hubs and clusters which appear in scale-free networks.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122341741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2021-3-3-21-26
A. Smirnov, M. Odnoblyudov, V. Bougrov, A. Romanov
We analyze the possibility for reducing the density of threading dislocations (TDs) in a porous AlN films exploring numerical calculations of thermoelastic stresses and the reaction-kinetic model of dislocation interactions. We study the distributions of the normal and shear components of the thermoelastic stress tensor in AlN film with triangular pores grown on Al2O3 substrate. We find the pore parameters that affect the decrease in the TD density in the AlN film. We compare the results of theoretical calculations with experimental data on TD density reduction in porous AlN/Al2O3 heterostructures.
{"title":"Modeling of Threading Dislocation Density Reduction in AlN/Al2O3 Porous Heterostructure","authors":"A. Smirnov, M. Odnoblyudov, V. Bougrov, A. Romanov","doi":"10.17586/2687-0568-2021-3-3-21-26","DOIUrl":"https://doi.org/10.17586/2687-0568-2021-3-3-21-26","url":null,"abstract":"We analyze the possibility for reducing the density of threading dislocations (TDs) in a porous AlN films exploring numerical calculations of thermoelastic stresses and the reaction-kinetic model of dislocation interactions. We study the distributions of the normal and shear components of the thermoelastic stress tensor in AlN film with triangular pores grown on Al2O3 substrate. We find the pore parameters that affect the decrease in the TD density in the AlN film. We compare the results of theoretical calculations with experimental data on TD density reduction in porous AlN/Al2O3 heterostructures.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134121648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2020-2-4-47-64
M. Ruzhevich, K. Mynbaev
This work presents a historical perspective on the studies of photoluminescence in mercury cadmium telluride (HgCdTe), one of the most important materials of infrared photoelectronics. The first part of the review considers the results of the studies performed during the early years of the development of the technology of this material (1966-1996). These studies were carried out mostly using samples of bulk crystals and epitaxial films grown by liquid-phase epitaxy. The results of the studies allowed for identification of the nature of optical transitions in HgCdTe, including excitonic emission, interband recombination, donor-acceptor pair recombination and recombination via shallow and deep levels, which greatly helped in maturing the material technology.
{"title":"Photoluminescence in Mercury Cadmium Telluride – a Historical Perspective. Part I: 1966-1996","authors":"M. Ruzhevich, K. Mynbaev","doi":"10.17586/2687-0568-2020-2-4-47-64","DOIUrl":"https://doi.org/10.17586/2687-0568-2020-2-4-47-64","url":null,"abstract":"This work presents a historical perspective on the studies of photoluminescence in mercury cadmium telluride (HgCdTe), one of the most important materials of infrared photoelectronics. The first part of the review considers the results of the studies performed during the early years of the development of the technology of this material (1966-1996). These studies were carried out mostly using samples of bulk crystals and epitaxial films grown by liquid-phase epitaxy. The results of the studies allowed for identification of the nature of optical transitions in HgCdTe, including excitonic emission, interband recombination, donor-acceptor pair recombination and recombination via shallow and deep levels, which greatly helped in maturing the material technology.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132545902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2022-4-3-47-51
D. Bauman, D. I. Panov, V. Spiridonov, V. V. Lundin, S. N. Rodin, N.D. Prasolov, A.L. Kolesnikova
Continuous monitoring of patient’s state in intensive care units is crucial for displaying critical conditions and identifying signs of clear consciousness. Traditional monitoring on a bedside monitor represents digital value on the screen and has several shortcomings. The observer’s perception of digital information is limited by visual acuity and affects the speed of decision-making. The radio frequency range is increasingly overloaded with the development of Internet of Things devices. It leads to numerous errors in the transmitted data. The developed system is aimed at the comprehensive elimination of the shortcomings through available means. An understandable visualization system is preferred for prompt recognition of changes in the patient’s state, increasing the speed of perception of the observer, and receiving information in the form of a data set. A data transmission system via optical wireless communication is relevant for duplicative channel for displaying and eliminating the shortcomings of systems operating in the radio frequency range. The system being developed is universal and can be used in a wide range of professional fields. In particular, if the use of the radio frequency range is limited and the stability of the data transmission channel to electromagnetic interference is essential.
{"title":"Fabrication and Testing of Substrates Made from Bulk Gallium Oxide Crystals by the Cleavage Method","authors":"D. Bauman, D. I. Panov, V. Spiridonov, V. V. Lundin, S. N. Rodin, N.D. Prasolov, A.L. Kolesnikova","doi":"10.17586/2687-0568-2022-4-3-47-51","DOIUrl":"https://doi.org/10.17586/2687-0568-2022-4-3-47-51","url":null,"abstract":"Continuous monitoring of patient’s state in intensive care units is crucial for displaying critical conditions and identifying signs of clear consciousness. Traditional monitoring on a bedside monitor represents digital value on the screen and has several shortcomings. The observer’s perception of digital information is limited by visual acuity and affects the speed of decision-making. The radio frequency range is increasingly overloaded with the development of Internet of Things devices. It leads to numerous errors in the transmitted data. The developed system is aimed at the comprehensive elimination of the shortcomings through available means. An understandable visualization system is preferred for prompt recognition of changes in the patient’s state, increasing the speed of perception of the observer, and receiving information in the form of a data set. A data transmission system via optical wireless communication is relevant for duplicative channel for displaying and eliminating the shortcomings of systems operating in the radio frequency range. The system being developed is universal and can be used in a wide range of professional fields. In particular, if the use of the radio frequency range is limited and the stability of the data transmission channel to electromagnetic interference is essential.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128614770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2023-5-1-33-38
K.R. Razzhivina, A. Kamarchuk, D. Shiryaev
This paper describes the operation model of reflectance oxygen saturation monitor for freediving implementation and its dependence on distance and interposing media between the monitor and human skin. The model includes two LEDs with peak radiation wavelengths 660 nm and 940 nm and two photodiodes with peak sensitivity at 940 nm, interposing medium layer with air, water or silica glass parameters and seven skin layers. The modeling is executed by Monte-Carlo method for the cases of air, glass and water as interposing medium and its various width in range from 2 mm to 8 mm which is chosen due to the planned case construction. The energy fluxes ratio dependence on distance between the photodiodes and skin is evaluated and analyzed.
{"title":"Oxygen Saturation Monitor Model Design for Freediving Implementation","authors":"K.R. Razzhivina, A. Kamarchuk, D. Shiryaev","doi":"10.17586/2687-0568-2023-5-1-33-38","DOIUrl":"https://doi.org/10.17586/2687-0568-2023-5-1-33-38","url":null,"abstract":"This paper describes the operation model of reflectance oxygen saturation monitor for freediving implementation and its dependence on distance and interposing media between the monitor and human skin. The model includes two LEDs with peak radiation wavelengths 660 nm and 940 nm and two photodiodes with peak sensitivity at 940 nm, interposing medium layer with air, water or silica glass parameters and seven skin layers. The modeling is executed by Monte-Carlo method for the cases of air, glass and water as interposing medium and its various width in range from 2 mm to 8 mm which is chosen due to the planned case construction. The energy fluxes ratio dependence on distance between the photodiodes and skin is evaluated and analyzed.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130122156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2022-4-3-23-27
V. Spiridonov, L. Azina, D. I. Panov, A. Kolesnikova
We demonstrate the concept of a spark sensor operating in UV range of the electromagnetic spectrum. The design of the device and the results of measurements of its most important characteristics are presented. Response time of the sensor is 3.8 ms and response threshold is 0.4 mW/m2. For the sensing element of the device glass material with the composition 10Li2O-15K2O-15Al2O3-35B2O3-25P2O5 doped with 5 at.% Eu is used. The peak of luminescence of the material corresponds to 611 nm when excited by a wide band (with wavelengths from 300 to 400 nm) of UV radiation that guarantees the high operation ability of the designed sensor.
{"title":"Spark Sensor Based on Lithium-Potassium-Aluminophosphate Borate Glass Doped with Eu","authors":"V. Spiridonov, L. Azina, D. I. Panov, A. Kolesnikova","doi":"10.17586/2687-0568-2022-4-3-23-27","DOIUrl":"https://doi.org/10.17586/2687-0568-2022-4-3-23-27","url":null,"abstract":"We demonstrate the concept of a spark sensor operating in UV range of the electromagnetic spectrum. The design of the device and the results of measurements of its most important characteristics are presented. Response time of the sensor is 3.8 ms and response threshold is 0.4 mW/m2. For the sensing element of the device glass material with the composition 10Li2O-15K2O-15Al2O3-35B2O3-25P2O5 doped with 5 at.% Eu is used. The peak of luminescence of the material corresponds to 611 nm when excited by a wide band (with wavelengths from 300 to 400 nm) of UV radiation that guarantees the high operation ability of the designed sensor.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134330740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2022-4-2-77-88
N. Sovtus, K. Mynbaev
A review on current filamentation and switching effect in chalcogenide glassy semiconductors (CGSs), which are promising materials for the development of phase change memory devices, is presented. First, a history of the research on CGSs and their properties is considered. Next, formation of a current filament in CGSs is discussed and the scale of heat release in the material as well as the geometric shape of the filament is analyzed. Finally, various hypotheses developed for the explanation of the switching effect in CGSs are reviewed. It is shown that the most relevant model of the switching effect in CGS is the model of multi-phonon tunneling ionization of the so-called ‘negative-U centers’. This model is based on the assumption that an avalanche-like increase in current at a certain point in time is associated with mass tunneling of electrons located on atoms, occuring due to thermal vibrations of atoms.
{"title":"Current Filamentation and Switching Effect in Chalcogenide Glassy Semiconductors: A Review","authors":"N. Sovtus, K. Mynbaev","doi":"10.17586/2687-0568-2022-4-2-77-88","DOIUrl":"https://doi.org/10.17586/2687-0568-2022-4-2-77-88","url":null,"abstract":"A review on current filamentation and switching effect in chalcogenide glassy semiconductors (CGSs), which are promising materials for the development of phase change memory devices, is presented. First, a history of the research on CGSs and their properties is considered. Next, formation of a current filament in CGSs is discussed and the scale of heat release in the material as well as the geometric shape of the filament is analyzed. Finally, various hypotheses developed for the explanation of the switching effect in CGSs are reviewed. It is shown that the most relevant model of the switching effect in CGS is the model of multi-phonon tunneling ionization of the so-called ‘negative-U centers’. This model is based on the assumption that an avalanche-like increase in current at a certain point in time is associated with mass tunneling of electrons located on atoms, occuring due to thermal vibrations of atoms.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134009709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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