Pub Date : 2022-03-31DOI: 10.17586/2687-0568-2022-4-1-33-38
A. Ivanov, A. Kremleva, S. Sharofidinov
We report on the analysis of the electrical properties of Schottky barrier diode structures based on gallium oxide (Ga2O3). Ga2O3 has been grown by chloride-hydride vapor phase epitaxy on Al2O3 substrate. Samples with different amounts of Sn impurity are experimentally characterized. Surface and cross-sectional scanning electron microscopy images, X-ray diffraction patterns and current-voltage characteristics of Ga2O3 layers both with and without contact pads are presented. The value of the Ga2O3 optimal doping is determined and the parameters of the surface treatment that is performed before the contact pads deposition are established.
{"title":"The Electrical Properties of Schottky Barrier Diode Structures Based on HVPE Grown Sn Dopped Ga2O3 Layers","authors":"A. Ivanov, A. Kremleva, S. Sharofidinov","doi":"10.17586/2687-0568-2022-4-1-33-38","DOIUrl":"https://doi.org/10.17586/2687-0568-2022-4-1-33-38","url":null,"abstract":"We report on the analysis of the electrical properties of Schottky barrier diode structures based on gallium oxide (Ga2O3). Ga2O3 has been grown by chloride-hydride vapor phase epitaxy on Al2O3 substrate. Samples with different amounts of Sn impurity are experimentally characterized. Surface and cross-sectional scanning electron microscopy images, X-ray diffraction patterns and current-voltage characteristics of Ga2O3 layers both with and without contact pads are presented. The value of the Ga2O3 optimal doping is determined and the parameters of the surface treatment that is performed before the contact pads deposition are established.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134213098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2022-4-2-32-42
P. Panfilov, A. Kabanova, D. Zaytsev, L. Kiselnikova, Jinming Guo, Z.L. Zhang
The relationship between structure and stress accommodation mechanisms (deformation and fracture) of human dentin on macro-, micro- and nano- scales is discussed. Dentin is the hard basis of human teeth with complicated hierarchically organized structure, which is attested as a natural composite consisted of a bioorganic matrix armed by collagen fibers and apatite crystallites. Dentin exhibits the unique strength properties. On the macroscopic level, under tensile load, it behaves like a brittle solid, and like a viscoelastic one in the case of compression. At the same time, on the microscopic scale cracks in dentin grow in a viscoelastic manner under tensile loading. Structure, mechanical properties and crack growth of human dentin on macro-, micro- and nano- scales, including TEM study, are considered in detail. It was shown that a brittle response under tension is the macroscopic feature of dentin caused by dentin channels, while viscoelasticity is its intrinsic property.
{"title":"Structure and Deformation Behavior of Human Dentin","authors":"P. Panfilov, A. Kabanova, D. Zaytsev, L. Kiselnikova, Jinming Guo, Z.L. Zhang","doi":"10.17586/2687-0568-2022-4-2-32-42","DOIUrl":"https://doi.org/10.17586/2687-0568-2022-4-2-32-42","url":null,"abstract":"The relationship between structure and stress accommodation mechanisms (deformation and fracture) of human dentin on macro-, micro- and nano- scales is discussed. Dentin is the hard basis of human teeth with complicated hierarchically organized structure, which is attested as a natural composite consisted of a bioorganic matrix armed by collagen fibers and apatite crystallites. Dentin exhibits the unique strength properties. On the macroscopic level, under tensile load, it behaves like a brittle solid, and like a viscoelastic one in the case of compression. At the same time, on the microscopic scale cracks in dentin grow in a viscoelastic manner under tensile loading. Structure, mechanical properties and crack growth of human dentin on macro-, micro- and nano- scales, including TEM study, are considered in detail. It was shown that a brittle response under tension is the macroscopic feature of dentin caused by dentin channels, while viscoelasticity is its intrinsic property.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126866159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2021-3-1-42-54
M. S. Kaiser
{"title":"Properties of Al-6Mg-xSc (x = 0 to 0.6 wt.%) Alloy Subjected to Thermal Treatment: A Review","authors":"M. S. Kaiser","doi":"10.17586/2687-0568-2021-3-1-42-54","DOIUrl":"https://doi.org/10.17586/2687-0568-2021-3-1-42-54","url":null,"abstract":"","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122684107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2023-5-2-25-31
N. Skiba
A brief review of the theoretical models which describe mechanisms of deformation twinning in nanocrystalline and ultrafine-grained materials is presented. In the framework of the models, formation of nanoscale deformation twins occurs at locally distorted grain boundaries that contain fragments being rich with grain boundary dislocations due to preceding severe plastic deformation processes. Within the review, mechanisms of deformation twinning at locally distorted grain boundaries represent (a) the consequent emission of partial dislocation; (b) the cooperative emission of partial dislocations; and (c) the generation of multiplane nanoscale shear.
{"title":"A Brief Review on Theoretical Models of Deformation Twinning at Locally Distorted Grain Boundaries","authors":"N. Skiba","doi":"10.17586/2687-0568-2023-5-2-25-31","DOIUrl":"https://doi.org/10.17586/2687-0568-2023-5-2-25-31","url":null,"abstract":"A brief review of the theoretical models which describe mechanisms of deformation twinning in nanocrystalline and ultrafine-grained materials is presented. In the framework of the models, formation of nanoscale deformation twins occurs at locally distorted grain boundaries that contain fragments being rich with grain boundary dislocations due to preceding severe plastic deformation processes. Within the review, mechanisms of deformation twinning at locally distorted grain boundaries represent (a) the consequent emission of partial dislocation; (b) the cooperative emission of partial dislocations; and (c) the generation of multiplane nanoscale shear.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122494195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2022-4-2-51-76
A. Melker, A. N. Matvienko, M. Krupina
We have designed possible structures of the isomers of midi-fullerenes, namely C40, C42, C44, C46, and C48; three the most natural mechanisms of their formation being used: fusion of carbon cupolas having the same symmetry; fusion of fullerenes having compatible symmetry and embedding carbon dimers into initial fullerenes. The energies of the fullerenes calculated through the use of molecular mechanics are presented together with their graphs. It is found that in the majority of cases the minimum-energy fullerenes are those, which have tetrahedral symmetries. The maximum-energy fullerenes refer to the three-fold T-symmetry.
{"title":"Classification of Fullerene Isomers from C40 to C48","authors":"A. Melker, A. N. Matvienko, M. Krupina","doi":"10.17586/2687-0568-2022-4-2-51-76","DOIUrl":"https://doi.org/10.17586/2687-0568-2022-4-2-51-76","url":null,"abstract":"We have designed possible structures of the isomers of midi-fullerenes, namely C40, C42, C44, C46, and C48; three the most natural mechanisms of their formation being used: fusion of carbon cupolas having the same symmetry; fusion of fullerenes having compatible symmetry and embedding carbon dimers into initial fullerenes. The energies of the fullerenes calculated through the use of molecular mechanics are presented together with their graphs. It is found that in the majority of cases the minimum-energy fullerenes are those, which have tetrahedral symmetries. The maximum-energy fullerenes refer to the three-fold T-symmetry.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129177319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2021-3-4-13-18
I. Sosnin
The present paper describes the effect of the structure of zinc oxide on its optical, electrical and photocatalytic properties. Examples of the influence of defects and lattice symmetry on photocatalytic activity are given. It is shown that oxygen vacancies allow to increase the rate of photocatalytic reaction due to donor properties and faceting allows to change the photocatalytic activity due to anisotropy of electric conductivity of zinc oxide. The mechanism of the influence of the dislocations and complex defects on zinc oxide photocatalytic properties is proposed. The present data can be used for development of photocatalysts based on zinc oxide, and for describing the photocatalytic properties of other semiconductors.
{"title":"Structural-Dependent Photocatalytic Properties of Zinc Oxide","authors":"I. Sosnin","doi":"10.17586/2687-0568-2021-3-4-13-18","DOIUrl":"https://doi.org/10.17586/2687-0568-2021-3-4-13-18","url":null,"abstract":"The present paper describes the effect of the structure of zinc oxide on its optical, electrical and photocatalytic properties. Examples of the influence of defects and lattice symmetry on photocatalytic activity are given. It is shown that oxygen vacancies allow to increase the rate of photocatalytic reaction due to donor properties and faceting allows to change the photocatalytic activity due to anisotropy of electric conductivity of zinc oxide. The mechanism of the influence of the dislocations and complex defects on zinc oxide photocatalytic properties is proposed. The present data can be used for development of photocatalysts based on zinc oxide, and for describing the photocatalytic properties of other semiconductors.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130642575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2023-5-1-39-44
P. Bogdanov, L. A. Sokura, A. Kremleva, V. Vitkin
The obtaining of uniform arrays of silver and gold nanoparticles with a surface density up to 3.3∙109 cm–2 on the zinc oxide buffer layers by sol-gel method is described. The variations of the solution composition and synthesis mode, layers coating and subsequent heat treatment were carried out. The absorption spectra of the obtained samples had a peak near 400–570 nm corresponding to the plasmon resonance in the Ag and Au nanoparticles. Wavelength and shape of Ag and Au nanoparticles plasmon peak varied depending on the synthesis mode: the use of ZnO buffer layers leads to an increase in the intensity of the nanoparticles plasmon peak, the annealing leads to a gradual decrease and broadening of the absorption peak of Ag and mixed Ag and Au nanoparticles arrays, but does not affect the peak of Au nanoparticles.
{"title":"Sol-Gel Synthesis of Uniform Arrays of Ag and Au Nanoparticles","authors":"P. Bogdanov, L. A. Sokura, A. Kremleva, V. Vitkin","doi":"10.17586/2687-0568-2023-5-1-39-44","DOIUrl":"https://doi.org/10.17586/2687-0568-2023-5-1-39-44","url":null,"abstract":"The obtaining of uniform arrays of silver and gold nanoparticles with a surface density up to 3.3∙109 cm–2 on the zinc oxide buffer layers by sol-gel method is described. The variations of the solution composition and synthesis mode, layers coating and subsequent heat treatment were carried out. The absorption spectra of the obtained samples had a peak near 400–570 nm corresponding to the plasmon resonance in the Ag and Au nanoparticles. Wavelength and shape of Ag and Au nanoparticles plasmon peak varied depending on the synthesis mode: the use of ZnO buffer layers leads to an increase in the intensity of the nanoparticles plasmon peak, the annealing leads to a gradual decrease and broadening of the absorption peak of Ag and mixed Ag and Au nanoparticles arrays, but does not affect the peak of Au nanoparticles.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124504806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2023-5-2-10-24
X. Zhang, V. Spiridonov, D. I. Panov, I. Sosnin, A. Romanov
Nowadays, gallium oxide (Ga2O3) as a wide bandgap semiconductor material is acquiring more and more attention in various practical areas. As a result, there has been a lot of efforts to fabricate and study bulk Ga2O3 material, Ga2O3 thin films, and Ga2O3 nanowires. For Ga2O3 films, there exists a variety of preparation methods such as metal-organic chemical vapor deposition, hydride vapor phase epitaxy, pulsed laser deposition, molecular beam epitaxy, frequency magnetron sputtering, atomic layer deposition, wet chemistry, and sol-gel. This concise review focuses on the preparation of Ga2O3 thin films by sol-gel methods. Sol-gel methods include dip-coating, spin-coating, spray pyrolysis, and drop casting technique. The details on the fabrication of β-Ga2O3 thin films by sol-gel method are summarized and prospected. Polymorphism, structure and properties of sol-gel prepared Ga2O3 films are discussed.
{"title":"Preparation of Ga2O3 Thin Films by Sol-Gel Method—a Concise Review","authors":"X. Zhang, V. Spiridonov, D. I. Panov, I. Sosnin, A. Romanov","doi":"10.17586/2687-0568-2023-5-2-10-24","DOIUrl":"https://doi.org/10.17586/2687-0568-2023-5-2-10-24","url":null,"abstract":"Nowadays, gallium oxide (Ga2O3) as a wide bandgap semiconductor material is acquiring more and more attention in various practical areas. As a result, there has been a lot of efforts to fabricate and study bulk Ga2O3 material, Ga2O3 thin films, and Ga2O3 nanowires. For Ga2O3 films, there exists a variety of preparation methods such as metal-organic chemical vapor deposition, hydride vapor phase epitaxy, pulsed laser deposition, molecular beam epitaxy, frequency magnetron sputtering, atomic layer deposition, wet chemistry, and sol-gel. This concise review focuses on the preparation of Ga2O3 thin films by sol-gel methods. Sol-gel methods include dip-coating, spin-coating, spray pyrolysis, and drop casting technique. The details on the fabrication of β-Ga2O3 thin films by sol-gel method are summarized and prospected. Polymorphism, structure and properties of sol-gel prepared Ga2O3 films are discussed.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134034340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2022-4-2-1-14
D. Sadykov, A. Mavlyutov, T. Orlova
Bulk nanostructured, or ultrafine-grained metals and alloys structured by severe plastic deformation (SPD) methods usually demonstrate high strength and reduced ductility. The poor ductility is a critical issue which limits their practical applications. Significant efforts were made to improve tensile ductility of the SPD-processed metallic materials while keeping sufficiently high strength. In this paper we present a short overview of the developed approaches for simultaneous improvement of the strength and ductility of Al-based alloys with an emphasis on the recent finding and physical reasons of the plasticity enhancement. The main attention is paid to achieving increased ductility of high strength aluminum alloy at room temperature.
{"title":"Enhanced Ductility of High-Strength Ultrafine-Grained Aluminum Alloys at Ambient Temperature (Review)","authors":"D. Sadykov, A. Mavlyutov, T. Orlova","doi":"10.17586/2687-0568-2022-4-2-1-14","DOIUrl":"https://doi.org/10.17586/2687-0568-2022-4-2-1-14","url":null,"abstract":"Bulk nanostructured, or ultrafine-grained metals and alloys structured by severe plastic deformation (SPD) methods usually demonstrate high strength and reduced ductility. The poor ductility is a critical issue which limits their practical applications. Significant efforts were made to improve tensile ductility of the SPD-processed metallic materials while keeping sufficiently high strength. In this paper we present a short overview of the developed approaches for simultaneous improvement of the strength and ductility of Al-based alloys with an emphasis on the recent finding and physical reasons of the plasticity enhancement. The main attention is paid to achieving increased ductility of high strength aluminum alloy at room temperature.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131001358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.17586/2687-0568-2021-3-4-24-28
M. Ruzhevich
This work presents the results of the investigation of optical properties of long-wavelength (~5 µm at 300 K) InAs/InAsSb/InAsSbP LED heterostructures. These heterostructures are used in various applications in mid-wavelength infrared range, such as environmental monitoring, etc. Electroluminescence was used to study the optical characteristics of the structures in the temperature range 4.2–300 K. Various radiative recombination channels in LED heterostructures were considered, including those associated with the InAs substrate and those related to the active layer, the latter competing depending on the temperature. The obtained results can be useful when designing optoelectronic devices with weak temperature dependence of the emission wavelength.
{"title":"Investigation of Radiation Recombination Channels in Long-Wavelength InAs/InAsSb/InAsSbP LED Heterostructures","authors":"M. Ruzhevich","doi":"10.17586/2687-0568-2021-3-4-24-28","DOIUrl":"https://doi.org/10.17586/2687-0568-2021-3-4-24-28","url":null,"abstract":"This work presents the results of the investigation of optical properties of long-wavelength (~5 µm at 300 K) InAs/InAsSb/InAsSbP LED heterostructures. These heterostructures are used in various applications in mid-wavelength infrared range, such as environmental monitoring, etc. Electroluminescence was used to study the optical characteristics of the structures in the temperature range 4.2–300 K. Various radiative recombination channels in LED heterostructures were considered, including those associated with the InAs substrate and those related to the active layer, the latter competing depending on the temperature. The obtained results can be useful when designing optoelectronic devices with weak temperature dependence of the emission wavelength.","PeriodicalId":332408,"journal":{"name":"Reviews on Advanced Materials and Technologies","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127796983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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