Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339069
E. Brown, A. Cotler, S. Gupta, A. Umali
A new type of RF sensor - the retrodirective noise correlating radar - was proposed just one year ago and shown in theory to have very short detection and acquisition times compared to conventional pencil-beam systems. This paper reports the first experimental results in a two-channel system band-limited around 2.14 GHz. Detection times less than 100 ns are demonstrated out to ranges of about 10 meter. This detection time is found to be limited primarily by the group delay through the transceiver electronics and a single round-trip time through free space.
{"title":"First demonstration of a retrodirective noise-correlating radar in S band","authors":"E. Brown, A. Cotler, S. Gupta, A. Umali","doi":"10.1109/MWSYM.2004.1339069","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339069","url":null,"abstract":"A new type of RF sensor - the retrodirective noise correlating radar - was proposed just one year ago and shown in theory to have very short detection and acquisition times compared to conventional pencil-beam systems. This paper reports the first experimental results in a two-channel system band-limited around 2.14 GHz. Detection times less than 100 ns are demonstrated out to ranges of about 10 meter. This detection time is found to be limited primarily by the group delay through the transceiver electronics and a single round-trip time through free space.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131287900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335830
A. Mellberg, N. Wadefalk, I. Angelov, E. Choumas, E. Kollberg, N. Rorsman, P. Starski, J. Stenarson, H. Zirath
This paper describes two-stage InP-based cryogenic broadband amplifier with very low noise for the frequency band 1.5-4.5 GHz. For a band of 2-4 GHz at 15 K the measured gain is 30.0/spl plusmn/2 dB and a noise temperature below 5 K. The total DC power consumption of the amplifier is 6.8 mW.
{"title":"Cryogenic 2-4 GHz ultra low noise amplifier","authors":"A. Mellberg, N. Wadefalk, I. Angelov, E. Choumas, E. Kollberg, N. Rorsman, P. Starski, J. Stenarson, H. Zirath","doi":"10.1109/MWSYM.2004.1335830","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335830","url":null,"abstract":"This paper describes two-stage InP-based cryogenic broadband amplifier with very low noise for the frequency band 1.5-4.5 GHz. For a band of 2-4 GHz at 15 K the measured gain is 30.0/spl plusmn/2 dB and a noise temperature below 5 K. The total DC power consumption of the amplifier is 6.8 mW.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131421672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335872
X. Yao, L. Maleki, D. Eliyahu
The opto-electronic oscillator (OEO), which uses an optical energy storage element to achieve low phase noise, represents a paradigm shift for generating high quality microwave signals. Since its first demonstration of low phase noise potential ten years ago at JPL, the OEO has been steadily improving its phase noise performance, frequency stability, and robustness. Now the OEO has moved beyond the laboratory and entered into real world applications, ranging from aerospace to telecommunications to instrumentation.
{"title":"Progress in the opto-electronic oscillator - a ten year anniversary review","authors":"X. Yao, L. Maleki, D. Eliyahu","doi":"10.1109/MWSYM.2004.1335872","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335872","url":null,"abstract":"The opto-electronic oscillator (OEO), which uses an optical energy storage element to achieve low phase noise, represents a paradigm shift for generating high quality microwave signals. Since its first demonstration of low phase noise potential ten years ago at JPL, the OEO has been steadily improving its phase noise performance, frequency stability, and robustness. Now the OEO has moved beyond the laboratory and entered into real world applications, ranging from aerospace to telecommunications to instrumentation.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133572448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338906
K. Mori, Y. Sakai, S. Tsuji, H. Asao, K. Seino, H. Hirose, T. Takagi
A Ku-band 40W high efficiency solid-state power amplifier (SSPA) has been developed. In order to achieve high efficiency, a Ku-band high efficiency internal-matched HFET and a small size and a low loss wave-guide combiner are developed and employed. The developed HFET achieves a power-added efficiency (PAE) of 37.5% and P1dB of 41.8dBm at base temperature (Tb) of 40degC. The source and load impedance of the HFET are matched to the optimum impedances for high temperature. The developed HFET achieves PAE of 33.8% and P1dB of 41.1 dBm over temperature range from -15 to 100 degC. The developed wave-guide combiner achieves insertion loss of less than 0.1dB. A Ku-band SSPA has been developed by using these components. It achieves an output power of 47.3 dBm (53.7W) and PAE of 25.6% at 14.2GHz and Tb of 25 degC, and achieves an output power of 46.4 dBm (43.6W), PAE of more than 21.9% and a linear gain of 36 dB at 14.0-14.4GHz over the temperature range from -15 to 95degC.
{"title":"A Ku-band 40W high efficiency solid-state power amplifier","authors":"K. Mori, Y. Sakai, S. Tsuji, H. Asao, K. Seino, H. Hirose, T. Takagi","doi":"10.1109/MWSYM.2004.1338906","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338906","url":null,"abstract":"A Ku-band 40W high efficiency solid-state power amplifier (SSPA) has been developed. In order to achieve high efficiency, a Ku-band high efficiency internal-matched HFET and a small size and a low loss wave-guide combiner are developed and employed. The developed HFET achieves a power-added efficiency (PAE) of 37.5% and P1dB of 41.8dBm at base temperature (Tb) of 40degC. The source and load impedance of the HFET are matched to the optimum impedances for high temperature. The developed HFET achieves PAE of 33.8% and P1dB of 41.1 dBm over temperature range from -15 to 100 degC. The developed wave-guide combiner achieves insertion loss of less than 0.1dB. A Ku-band SSPA has been developed by using these components. It achieves an output power of 47.3 dBm (53.7W) and PAE of 25.6% at 14.2GHz and Tb of 25 degC, and achieves an output power of 46.4 dBm (43.6W), PAE of more than 21.9% and a linear gain of 36 dB at 14.0-14.4GHz over the temperature range from -15 to 95degC.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127003317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339016
A. Khanifar, N. Maslennikov, R. Modina, Mark Gurvich
Linear digital modulation techniques in modern communication systems generate carrier signals with relatively high peak-to-average ratio. For linear amplification of such a signal, power amplifier must be operated at excessive back off, thus sacrificing the overall amplifier efficiency. Dynamic bias switching (DBS) can be used to enhance the efficiency of PA and the means to combat the degradation of spectrum regrowth and in-band noise are discussed in this paper. DBS is achieved by partitioning the required supply rail into two or several levels. The supply voltage is switched between the steps, and is adjusted in tune with the signal envelope. This is accomplished by using a pass-transistor (gate) operated as a switch with very low channel resistance. This approach avoids the energy loss associated with continuous tracking (amplification) of the signal envelope reported in the literature.
{"title":"Enhancement of power amplifier efficiency through dynamic bias switching","authors":"A. Khanifar, N. Maslennikov, R. Modina, Mark Gurvich","doi":"10.1109/MWSYM.2004.1339016","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339016","url":null,"abstract":"Linear digital modulation techniques in modern communication systems generate carrier signals with relatively high peak-to-average ratio. For linear amplification of such a signal, power amplifier must be operated at excessive back off, thus sacrificing the overall amplifier efficiency. Dynamic bias switching (DBS) can be used to enhance the efficiency of PA and the means to combat the degradation of spectrum regrowth and in-band noise are discussed in this paper. DBS is achieved by partitioning the required supply rail into two or several levels. The supply voltage is switched between the steps, and is adjusted in tune with the signal envelope. This is accomplished by using a pass-transistor (gate) operated as a switch with very low channel resistance. This approach avoids the energy loss associated with continuous tracking (amplification) of the signal envelope reported in the literature.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134241236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335808
M.R. Kuhn, E. Biebl
The 24 GHz ISM-band is very interesting for low-cost radars. Due to cost demands no expensive phase stabilization of oscillators is possible. In this work, a free running first harmonic oscillator with a 12 GHz fundamental oscillation and a 24 GHz output signal is presented. For power combining purposes we investigated the injection locking mechanism at the first harmonic. Two-arrays consisting of three and 16 oscillators, respectively were developed and built. Mutual phase locking was achieved by means of coupling structures integrated in the antennas resulting in power combining without the requirement of costly amplifiers and frequency stabilization due to injection locking is very advantageous for low-cost radar systems. Additional stabilization can be obtained by coupling the system with an external source.
{"title":"Power combining by means of harmonic injection locking","authors":"M.R. Kuhn, E. Biebl","doi":"10.1109/MWSYM.2004.1335808","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335808","url":null,"abstract":"The 24 GHz ISM-band is very interesting for low-cost radars. Due to cost demands no expensive phase stabilization of oscillators is possible. In this work, a free running first harmonic oscillator with a 12 GHz fundamental oscillation and a 24 GHz output signal is presented. For power combining purposes we investigated the injection locking mechanism at the first harmonic. Two-arrays consisting of three and 16 oscillators, respectively were developed and built. Mutual phase locking was achieved by means of coupling structures integrated in the antennas resulting in power combining without the requirement of costly amplifiers and frequency stabilization due to injection locking is very advantageous for low-cost radar systems. Additional stabilization can be obtained by coupling the system with an external source.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134193829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338991
Akira Inoue, A. Ohta, S. Goto, T. Ishikawa, Y. Matsuda
The efficiency of class-F and inverse class-F amplifiers are studied using measurements and theories. At high quiescent current, inverse class-F amplifiers show higher efficiency than that of class-F. This phenomenon is experimentally ensured with GaAs pHEMTs and GaAs HBTs. A harmonic balanced simulation also supports this result, and reveals the difference between the classes. An analytic waveform analysis with restricted harmonics explains this dependence on the quiescent currents.
{"title":"The efficiency of class-F and inverse class-F amplifiers","authors":"Akira Inoue, A. Ohta, S. Goto, T. Ishikawa, Y. Matsuda","doi":"10.1109/MWSYM.2004.1338991","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338991","url":null,"abstract":"The efficiency of class-F and inverse class-F amplifiers are studied using measurements and theories. At high quiescent current, inverse class-F amplifiers show higher efficiency than that of class-F. This phenomenon is experimentally ensured with GaAs pHEMTs and GaAs HBTs. A harmonic balanced simulation also supports this result, and reveals the difference between the classes. An analytic waveform analysis with restricted harmonics explains this dependence on the quiescent currents.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134486150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1336035
N. Wang, W. Ma, X. Chen, X. Sun, H.F. Chau, C. Dunnrowicz, Y. Chen, B. Lin, I.L. Lo, C.H. Huang, M.H.T. Yang
InGaP/GaAs HBT running at 24-28 V operation voltage has demonstrated over 20 W output power in the standard MMIC format with efficiency over 60%. On-chip power combining of multiple HBT building-blocks successfully delivered the power transistor with multi-tens watt output power without any undesired spur. Two-tone linearity and other modulation signal were used to characterize the linearity of the HBT power transistor. By properly matching the HBT at the RF frequency, as well as the low frequency source impedance, linearity is clearly improved. WCDMA signal with ACLR1=-45 dBc is achieved with only 8 dB backoff, as compared with the WCDMA test method 1 of 9.8 dB peak-to-average ratio; the efficiency reaches 20%. This effort clearly demonstrated the potential of InGaP/GaAs HBT in the high power, high voltage operation.
{"title":"Linearity improvement of multi-Watts 24-28 V InGaP/GaAs HBT by low frequency low source impedance matching","authors":"N. Wang, W. Ma, X. Chen, X. Sun, H.F. Chau, C. Dunnrowicz, Y. Chen, B. Lin, I.L. Lo, C.H. Huang, M.H.T. Yang","doi":"10.1109/MWSYM.2004.1336035","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1336035","url":null,"abstract":"InGaP/GaAs HBT running at 24-28 V operation voltage has demonstrated over 20 W output power in the standard MMIC format with efficiency over 60%. On-chip power combining of multiple HBT building-blocks successfully delivered the power transistor with multi-tens watt output power without any undesired spur. Two-tone linearity and other modulation signal were used to characterize the linearity of the HBT power transistor. By properly matching the HBT at the RF frequency, as well as the low frequency source impedance, linearity is clearly improved. WCDMA signal with ACLR1=-45 dBc is achieved with only 8 dB backoff, as compared with the WCDMA test method 1 of 9.8 dB peak-to-average ratio; the efficiency reaches 20%. This effort clearly demonstrated the potential of InGaP/GaAs HBT in the high power, high voltage operation.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"18 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133140223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339195
Y. Ma, G. Li
A 5.4-6.0 GHz InGaP/GaAs HBT power amplifier with a compact 2000 Vesd on-chip electrostatic discharge (ESD) protection circuit that has low loading capacitance of less than 0.1 pF and does not degrade RF and output power performance is presented for wireless LAN application. In contrast to the traditional diode string, a diode triggered Darlington pair is implemented as the ESD protection circuit. This summary discusses the operation principle, ESD protection performance and RF loading of the ESD protection circuit, and the power amplifier performance with this ESD protection circuit.
{"title":"InGaP/GaAs HBT RF power amplifier with compact ESD protection circuit","authors":"Y. Ma, G. Li","doi":"10.1109/MWSYM.2004.1339195","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339195","url":null,"abstract":"A 5.4-6.0 GHz InGaP/GaAs HBT power amplifier with a compact 2000 Vesd on-chip electrostatic discharge (ESD) protection circuit that has low loading capacitance of less than 0.1 pF and does not degrade RF and output power performance is presented for wireless LAN application. In contrast to the traditional diode string, a diode triggered Darlington pair is implemented as the ESD protection circuit. This summary discusses the operation principle, ESD protection performance and RF loading of the ESD protection circuit, and the power amplifier performance with this ESD protection circuit.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130338981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335905
L. Elbrecht, R. Aigner, C. Lin, Hans-Joerg Timme
The concepts and trends for the use of bulk acoustic wave (BAW) filters in tomorrow's highly integrated RF front end components in mobile communication devices are discussed. We present examples for the integration of BAW filters into low-cost laminate-based modules and for the monolithic integration of solidly mounted bulk acoustic wave devices with bipolar integrated circuits. The options and limitation of the integration approaches are discussed.
{"title":"Integration of bulk acoustic wave filters: concepts and trends","authors":"L. Elbrecht, R. Aigner, C. Lin, Hans-Joerg Timme","doi":"10.1109/MWSYM.2004.1335905","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335905","url":null,"abstract":"The concepts and trends for the use of bulk acoustic wave (BAW) filters in tomorrow's highly integrated RF front end components in mobile communication devices are discussed. We present examples for the integration of BAW filters into low-cost laminate-based modules and for the monolithic integration of solidly mounted bulk acoustic wave devices with bipolar integrated circuits. The options and limitation of the integration approaches are discussed.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115785399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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