Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335888
H. Schmiedel
Different from well known conventional designs of parallel-multi-line directional couplers, this paper presents methods to substantially increase the coupling of parallel-line coupler types. Higher coupling is achieved by a novel series configuration of two coupler elements, with moderate, individual coupling, and additional phasing lines in between these two coupling elements. Additional coupler elements allow for broadband designs. Besides high coupling, in principle this coupler arrangement yields substantial decoupling of output ports. This paper presents the basic for three-parallel-line systems and shows simulation results verified by measurements.
{"title":"Series-configuration of multi-line directional-coupler sections with improved coupling","authors":"H. Schmiedel","doi":"10.1109/MWSYM.2004.1335888","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335888","url":null,"abstract":"Different from well known conventional designs of parallel-multi-line directional couplers, this paper presents methods to substantially increase the coupling of parallel-line coupler types. Higher coupling is achieved by a novel series configuration of two coupler elements, with moderate, individual coupling, and additional phasing lines in between these two coupling elements. Additional coupler elements allow for broadband designs. Besides high coupling, in principle this coupler arrangement yields substantial decoupling of output ports. This paper presents the basic for three-parallel-line systems and shows simulation results verified by measurements.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"275 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115118414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338990
Xiaobin Yuan, S. Cherepko, J. Hwang, C. Goldsmith, C. Nordqusit, C. Dyck
Capacitance voltage and RF-output characteristics of electrostatically actuated MEMS switches were measured under different control and stress voltages. It was found that positive voltage stress caused negative charging of the dielectric whereas negative voltage stress caused positive charging of the dielectric. This is consistent with the amphoteric nature of traps in the silicon oxynitride dielectric used for the switches. A hypothesis of charge injection in minutes and charge migration in milliseconds was proposed to explain real-time and nonsymmetrical drift of pull-down and hold-down voltages of the switches.
{"title":"Initial observation and analysis of dielectric-charging effects on RF MEMS capacitive switches","authors":"Xiaobin Yuan, S. Cherepko, J. Hwang, C. Goldsmith, C. Nordqusit, C. Dyck","doi":"10.1109/MWSYM.2004.1338990","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338990","url":null,"abstract":"Capacitance voltage and RF-output characteristics of electrostatically actuated MEMS switches were measured under different control and stress voltages. It was found that positive voltage stress caused negative charging of the dielectric whereas negative voltage stress caused positive charging of the dielectric. This is consistent with the amphoteric nature of traps in the silicon oxynitride dielectric used for the switches. A hypothesis of charge injection in minutes and charge migration in milliseconds was proposed to explain real-time and nonsymmetrical drift of pull-down and hold-down voltages of the switches.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127091437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338837
L. Vietzorreck, W. Pascher
Rigorous full wave analysis of complex planar circuits affords a fine discretization mesh, which results in a large eigenmode spectrum. To reduce the modal complexity, a new method of lines approach is presented, which combines discretization lines in longitudinal direction with the concept of localized and accessible modes. Additionally, an innovative individual interface meshing is introduced, which is especially suited for cascaded circuits with strongly varying lateral dimensions. The computation time is significantly decreased by these two complexity reduction steps. Perfect accuracy and high efficiency are demonstrated for two cascaded CPW filters.
{"title":"Efficiency enhancement by reduction of modal complexity in the analysis of cascaded planar circuits by the MoL","authors":"L. Vietzorreck, W. Pascher","doi":"10.1109/MWSYM.2004.1338837","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338837","url":null,"abstract":"Rigorous full wave analysis of complex planar circuits affords a fine discretization mesh, which results in a large eigenmode spectrum. To reduce the modal complexity, a new method of lines approach is presented, which combines discretization lines in longitudinal direction with the concept of localized and accessible modes. Additionally, an innovative individual interface meshing is introduced, which is especially suited for cascaded circuits with strongly varying lateral dimensions. The computation time is significantly decreased by these two complexity reduction steps. Perfect accuracy and high efficiency are demonstrated for two cascaded CPW filters.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130663411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339001
B. Albert, L. Billonnet, B. Jarry
In this paper, a new transversal active filter is presented. Basic principle consists of combining the signals coming from two branches. One branch is passive and the other includes a band-pass filter. The transversal combination leads to a stop-band response. For the band-pass filter, we have chosen a recursive topology that uses the same amplifier/power combiner association process. We first present a low-noise MMIC active recursive filter implemented at X-band. Layout, measured noise figure and s-parameters of this filter are presented. Then, the theoretical background of the transversal filter is given. We first apply the technique by using the results of the low-noise measured recursive filter. We further show the improvement provided by the method with the analytical optimization of the filter in terms of noise.
{"title":"Novel design approach for transversal notch filter using recursive principles","authors":"B. Albert, L. Billonnet, B. Jarry","doi":"10.1109/MWSYM.2004.1339001","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339001","url":null,"abstract":"In this paper, a new transversal active filter is presented. Basic principle consists of combining the signals coming from two branches. One branch is passive and the other includes a band-pass filter. The transversal combination leads to a stop-band response. For the band-pass filter, we have chosen a recursive topology that uses the same amplifier/power combiner association process. We first present a low-noise MMIC active recursive filter implemented at X-band. Layout, measured noise figure and s-parameters of this filter are presented. Then, the theoretical background of the transversal filter is given. We first apply the technique by using the results of the low-noise measured recursive filter. We further show the improvement provided by the method with the analytical optimization of the filter in terms of noise.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132909024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339178
Jiasheng Hong, E. McErlean
This paper presents a narrow-band HTS bandpass filter on sapphire substrate for future mobile communications systems. The filter is designed to have a five MHz pass band in the UMTS base stations receive band. The filter exhibits a eight-pole quasi-elliptic function response implemented with a cascaded quadruplet coupling structure. The filter was fabricated on a 0.43 mm-thick sapphire wafer with double-sided YBCO films. The measured filter showed a midband insertion loss of 0.5 dB at 1973 MHz and a return loss better than -15 dB over the pass band. It also exhibited an excellent rejection over the entire UMTS base station transmission band.
{"title":"Narrow-band HTS filter on sapphire substrate","authors":"Jiasheng Hong, E. McErlean","doi":"10.1109/MWSYM.2004.1339178","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339178","url":null,"abstract":"This paper presents a narrow-band HTS bandpass filter on sapphire substrate for future mobile communications systems. The filter is designed to have a five MHz pass band in the UMTS base stations receive band. The filter exhibits a eight-pole quasi-elliptic function response implemented with a cascaded quadruplet coupling structure. The filter was fabricated on a 0.43 mm-thick sapphire wafer with double-sided YBCO films. The measured filter showed a midband insertion loss of 0.5 dB at 1973 MHz and a return loss better than -15 dB over the pass band. It also exhibited an excellent rejection over the entire UMTS base station transmission band.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134484210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339152
P. Brown, I. Syratchev
A prototype 3 GHz RF pulse compressor, based on a single 'Barrel shaped Open Cavity' (BOC), was designed, manufactured and successfully high power tested into a RF load. It is now planned to install five such devices in the CTF3 drive beam linac currently being built at CERN. A specific feature of the BOC is the so-called "whispering gallery" mode which has a high internal Q-factor. Contrary to other cavity-based pulse compressors, such as SLED or LIPS, with this mode one can operate in a resonant rotating wave regime. Consequently, when used as an RF pulse compressor a single BOC is sufficient, whereas the LIPS and SLED schemes require two cavities and a 3-dB hybrid. A short description of the BOC and the results of high power operation specific to the CTF3 drive beam linac are presented.
{"title":"3 GHz Barrel Open Cavity (BOC) RF pulse compressor for CTF3","authors":"P. Brown, I. Syratchev","doi":"10.1109/MWSYM.2004.1339152","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339152","url":null,"abstract":"A prototype 3 GHz RF pulse compressor, based on a single 'Barrel shaped Open Cavity' (BOC), was designed, manufactured and successfully high power tested into a RF load. It is now planned to install five such devices in the CTF3 drive beam linac currently being built at CERN. A specific feature of the BOC is the so-called \"whispering gallery\" mode which has a high internal Q-factor. Contrary to other cavity-based pulse compressors, such as SLED or LIPS, with this mode one can operate in a resonant rotating wave regime. Consequently, when used as an RF pulse compressor a single BOC is sufficient, whereas the LIPS and SLED schemes require two cavities and a 3-dB hybrid. A short description of the BOC and the results of high power operation specific to the CTF3 drive beam linac are presented.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130858329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335863
P.H. Suhermann, T. Jackson, Y. Koutsonas, R. Chakalov, M. Lancaster
A phase shifter based on coplanar waveguide transmission lines has been used to characterize the microwave properties of Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ thin films over a wideband frequency range (45 MHz-50 GHz). Films with tunability of /spl sim/45% dielectric permittivity of /spl sim/1000 and tan /spl delta/ < 0.005 were obtained after optimization of the deposition processes. A phase shift of /spl sim/220/spl deg/ at 40 GHz has been achieved along 5250 /spl mu/m lines with a dc-bias voltage as small as 70 V (producing 2.8 kV cm/sup -1/), with an insertion loss of 8 dB. Selected structural properties of the films were compared with the microwave properties.
{"title":"On-wafer microwave characterization of ferroelectric thin film phase shifters","authors":"P.H. Suhermann, T. Jackson, Y. Koutsonas, R. Chakalov, M. Lancaster","doi":"10.1109/MWSYM.2004.1335863","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335863","url":null,"abstract":"A phase shifter based on coplanar waveguide transmission lines has been used to characterize the microwave properties of Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ thin films over a wideband frequency range (45 MHz-50 GHz). Films with tunability of /spl sim/45% dielectric permittivity of /spl sim/1000 and tan /spl delta/ < 0.005 were obtained after optimization of the deposition processes. A phase shift of /spl sim/220/spl deg/ at 40 GHz has been achieved along 5250 /spl mu/m lines with a dc-bias voltage as small as 70 V (producing 2.8 kV cm/sup -1/), with an insertion loss of 8 dB. Selected structural properties of the films were compared with the microwave properties.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131094274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338938
J.M. Yang, M. Aust, Y. Chung, W. Lee, R. Stokes, R. Dupery, R. Lai, B. Gorospe, R. Kagiwada
The objective of this paper is to provide an implementation to construct an affordable and high performance transceiver module which can meet the stringent performance specification required for a large aperture phased array. An InP based transceiver chip set consisting of a HBT power amplifier with >60% PAE and a HEMT LNA consuming < 3mW of DC power is assembled in a low cost BGA package to achieve the performance and cost goal of the module.
{"title":"Affordable high performance InP X-band transceiver module for large aperture phased array applications","authors":"J.M. Yang, M. Aust, Y. Chung, W. Lee, R. Stokes, R. Dupery, R. Lai, B. Gorospe, R. Kagiwada","doi":"10.1109/MWSYM.2004.1338938","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338938","url":null,"abstract":"The objective of this paper is to provide an implementation to construct an affordable and high performance transceiver module which can meet the stringent performance specification required for a large aperture phased array. An InP based transceiver chip set consisting of a HBT power amplifier with >60% PAE and a HEMT LNA consuming < 3mW of DC power is assembled in a low cost BGA package to achieve the performance and cost goal of the module.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132356105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338978
Chul-Soo Kim, Jongsik Lim, Dong-Joo Kim, D. Ahn
In this paper, single and two-section microstrip directional couplers are implemented for realizing the high-directivity characteristics. The achievement of the high-directivity with microstrip configuration is carried out by the distributed capacitor to decrease the even and odd mode phase difference. Capacitive compensation is performed by gap coupling of open stub formed in sub-coupled line. Therefore, insertion loss and power handling capability are not affected by the gap coupling. The proposed structure is easy to fabricate and incorporate another microwave device due to planner microstrip. We designed and fabricated single and two-section directional coupler with 20 dB coupling. In spite of microstrip structure, the capacitive compensation structure shows the 30 dB (1.6 GHz-2 GHz range) and 26 dB (1 GHz-2.5 GHz) of directivity in single and two-section directional couplers, respectively. Experimental results show a good performance with excellent directivity characteristics.
本文采用单段和双段微带定向耦合器实现高指向性特性。微带结构的高指向性是通过分布式电容来实现的，以减小奇偶模相位差。电容补偿是通过在分耦合线路中形成的开路短段的间隙耦合来实现的。因此，插入损耗和功率处理能力不受间隙耦合的影响。由于规划微带，该结构易于制造和集成另一个微波器件。设计制作了20 dB的单段和两段定向耦合器。尽管采用微带结构，但电容补偿结构在单段和两段定向耦合器中分别显示出30 dB (1.6 GHz-2 GHz范围)和26 dB (1 GHz-2.5 GHz)的指向性。实验结果表明，该方法性能良好，具有良好的指向性。
{"title":"A design of single and multi-section microstrip directional coupler with the high directivity","authors":"Chul-Soo Kim, Jongsik Lim, Dong-Joo Kim, D. Ahn","doi":"10.1109/MWSYM.2004.1338978","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338978","url":null,"abstract":"In this paper, single and two-section microstrip directional couplers are implemented for realizing the high-directivity characteristics. The achievement of the high-directivity with microstrip configuration is carried out by the distributed capacitor to decrease the even and odd mode phase difference. Capacitive compensation is performed by gap coupling of open stub formed in sub-coupled line. Therefore, insertion loss and power handling capability are not affected by the gap coupling. The proposed structure is easy to fabricate and incorporate another microwave device due to planner microstrip. We designed and fabricated single and two-section directional coupler with 20 dB coupling. In spite of microstrip structure, the capacitive compensation structure shows the 30 dB (1.6 GHz-2 GHz range) and 26 dB (1 GHz-2.5 GHz) of directivity in single and two-section directional couplers, respectively. Experimental results show a good performance with excellent directivity characteristics.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129410493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338924
L. Kulas, M. Mrozowski
A concept of Yee's macrocells in three dimensions is introduced. The macrocell is a reduced order model of Maxwell's grid equation written for densely subgridded volume slightly larger than a regular Yee's cell. Problems related to cubic growth of the number of variables and orthogonality loss during the model order reduction process are addressed. It is shown that 3D Yee's macrocells with high refinement factors can be constructed in seconds. Numerical tests show that macrocells can significantly improve the accuracy at a cost much lower than for subgridding or graded meshing.
{"title":"Yee's macrocells in three dimensions","authors":"L. Kulas, M. Mrozowski","doi":"10.1109/MWSYM.2004.1338924","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338924","url":null,"abstract":"A concept of Yee's macrocells in three dimensions is introduced. The macrocell is a reduced order model of Maxwell's grid equation written for densely subgridded volume slightly larger than a regular Yee's cell. Problems related to cubic growth of the number of variables and orthogonality loss during the model order reduction process are addressed. It is shown that 3D Yee's macrocells with high refinement factors can be constructed in seconds. Numerical tests show that macrocells can significantly improve the accuracy at a cost much lower than for subgridding or graded meshing.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129462105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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