Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335786
R. Chan, M. Feng
A low noise wideband amplifier using SiGe HBT technology for the receiver system-on-a-chip application is reported. The fabricated amplifier chip has a gain of 15 dB across 22 GHz bandwidth, noise figure of 5 dB, and output third-order intermodulation product (OIP3) of 16.5 dBm, while dissipating a dc power of 72 mW for the operation. Measured high frequency, noise and linearity performances are compared with Cadence's Spectre's simulation with layout parasitics. Excellent agreement is observed for ultra-low power amplifier's measured and simulated results.
{"title":"Low noise, and high gain wideband amplifier using SiGe HBT technology","authors":"R. Chan, M. Feng","doi":"10.1109/MWSYM.2004.1335786","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335786","url":null,"abstract":"A low noise wideband amplifier using SiGe HBT technology for the receiver system-on-a-chip application is reported. The fabricated amplifier chip has a gain of 15 dB across 22 GHz bandwidth, noise figure of 5 dB, and output third-order intermodulation product (OIP3) of 16.5 dBm, while dissipating a dc power of 72 mW for the operation. Measured high frequency, noise and linearity performances are compared with Cadence's Spectre's simulation with layout parasitics. Excellent agreement is observed for ultra-low power amplifier's measured and simulated results.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114222868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339059
T. Vaha-Heikkila, Gabriel M. Rebeiz
A reconfigurable matching network has been developed and it is based on loaded line techniques. It consists of 8 switched MEMS capacitors producing 256 (2/sup 8/) different impedances and is only 1/spl times/2.5 mm in size on a glass substrate. The network is ideally suited to match power amplifiers with 10-20 /spl Omega/ output impedance to 50-60 /spl Omega/ systems at 20-50 GHz. The estimated loss of the network is only 1-1.5 dB at 40 GHz while matching a 10-20 /spl Omega/ load to a 50 /spl Omega/ load. The reconfigurable network can also be used as an impedance tuner in noise parameter and load-pull measurements of active devices at 30-65 GHz.
{"title":"A 20-50 GHz reconfigurable matching network for power amplifier applications","authors":"T. Vaha-Heikkila, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2004.1339059","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339059","url":null,"abstract":"A reconfigurable matching network has been developed and it is based on loaded line techniques. It consists of 8 switched MEMS capacitors producing 256 (2/sup 8/) different impedances and is only 1/spl times/2.5 mm in size on a glass substrate. The network is ideally suited to match power amplifiers with 10-20 /spl Omega/ output impedance to 50-60 /spl Omega/ systems at 20-50 GHz. The estimated loss of the network is only 1-1.5 dB at 40 GHz while matching a 10-20 /spl Omega/ load to a 50 /spl Omega/ load. The reconfigurable network can also be used as an impedance tuner in noise parameter and load-pull measurements of active devices at 30-65 GHz.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"211 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114223835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338877
F. Nunez, A. Skrivervik
In this paper, radial basis function neural networks (RBF-NN) are used to approximate microwave filters. The method used is based on the segmentation of the structure in small units and the approximation of their scattering parameters. The approximated transmission matrices of each unit are multiplied to reproduce the whole filter response. This method is applied to a genetic algorithm in order to obtain a 13 sections microwave step filter, with a specified response. The RBF-NN response of the resulting filter is compared with its full-wave method of moments analysis showing a considerable save of computation time and increased accuracy in the results.
{"title":"Filter approximation by RBF-NN and segmentation method","authors":"F. Nunez, A. Skrivervik","doi":"10.1109/MWSYM.2004.1338877","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338877","url":null,"abstract":"In this paper, radial basis function neural networks (RBF-NN) are used to approximate microwave filters. The method used is based on the segmentation of the structure in small units and the approximation of their scattering parameters. The approximated transmission matrices of each unit are multiplied to reproduce the whole filter response. This method is applied to a genetic algorithm in order to obtain a 13 sections microwave step filter, with a specified response. The RBF-NN response of the resulting filter is compared with its full-wave method of moments analysis showing a considerable save of computation time and increased accuracy in the results.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"1140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121037563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335785
D. Becher, G. Banerjee, R. Basco, C. Hung, K. Kuhn, W. Shih
This work describes the noise figure performance of CMOS transistors at the 90 nm technology node. Noise parameters are measured from 2-18 GHz, resulting in a minimum noise figure less than 2 dB across the range of measured frequencies for both NMOS and PMOS. Data is presented showing the effect of total gate width, gate length, and bias on the noise parameters.
{"title":"Noise performance of 90 nm CMOS technology","authors":"D. Becher, G. Banerjee, R. Basco, C. Hung, K. Kuhn, W. Shih","doi":"10.1109/MWSYM.2004.1335785","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335785","url":null,"abstract":"This work describes the noise figure performance of CMOS transistors at the 90 nm technology node. Noise parameters are measured from 2-18 GHz, resulting in a minimum noise figure less than 2 dB across the range of measured frequencies for both NMOS and PMOS. Data is presented showing the effect of total gate width, gate length, and bias on the noise parameters.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121128462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339005
Sangsoo Ko, Hui-Dong Lee, Dong‐Woo Kang, Songcheol Hong
A new quadrature balanced voltage controlled oscillator (B-VCO) is presented. The quadrature and single B-VCO with identical components are implemented in 0.18 /spl mu/m CMOS technology. The quadrature B-VCO has lower phase noise, higher oscillation frequency and higher figure of merit (FOM) than the single B-VCO. The measured phase noise values of the single and quadrature VCO are -114.83 and -116.67 dBc/Hz at the offset frequencies of 1 MHz at the center frequency of 10.21 and 10.81 GHz, respectively. Both VCO cores consume about 8.8 mA from a 1.8 V supply. The FOM of 183 and 185 dB are achieved in the quadrature and single VCO respectively.
{"title":"An X-band CMOS quadrature balanced VCO","authors":"Sangsoo Ko, Hui-Dong Lee, Dong‐Woo Kang, Songcheol Hong","doi":"10.1109/MWSYM.2004.1339005","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339005","url":null,"abstract":"A new quadrature balanced voltage controlled oscillator (B-VCO) is presented. The quadrature and single B-VCO with identical components are implemented in 0.18 /spl mu/m CMOS technology. The quadrature B-VCO has lower phase noise, higher oscillation frequency and higher figure of merit (FOM) than the single B-VCO. The measured phase noise values of the single and quadrature VCO are -114.83 and -116.67 dBc/Hz at the offset frequencies of 1 MHz at the center frequency of 10.21 and 10.81 GHz, respectively. Both VCO cores consume about 8.8 mA from a 1.8 V supply. The FOM of 183 and 185 dB are achieved in the quadrature and single VCO respectively.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116098295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339109
Dae-Hee Weon, Jong-Hyeok Jeon, Jeong-Il Kim, S. Mohammadi, L. Katehi
Using a novel 3-D fabrication technology, we have demonstrated, for the first time, very high frequency and high quality factor (Q) inductors and transformers on Si substrate. On high resistivity Si, this technology achieves a quality factor of Q>60 for 1nH inductor at frequencies of 3 to 7 GHz. High efficiency high-Q transformers with coupling factors 0.6
{"title":"High-Q integrated 3-D inductors and transformers for high frequency applications","authors":"Dae-Hee Weon, Jong-Hyeok Jeon, Jeong-Il Kim, S. Mohammadi, L. Katehi","doi":"10.1109/MWSYM.2004.1339109","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339109","url":null,"abstract":"Using a novel 3-D fabrication technology, we have demonstrated, for the first time, very high frequency and high quality factor (Q) inductors and transformers on Si substrate. On high resistivity Si, this technology achieves a quality factor of Q>60 for 1nH inductor at frequencies of 3 to 7 GHz. High efficiency high-Q transformers with coupling factors 0.6<k<0.9 are achieved with very high self-resonance frequencies (8 GHz<f/sub res/<16 GHz). This technology is very simple and is fully compatible with Si and compound-semiconductor fabrication technologies and can be either implemented as a post-processing step or as a part of a vertical chip to inter poser packaging scheme.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121200384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335861
Dongsu Kim, Sang-Soo Je, J. Kenney, P. Marry
This paper investigates design techniques for continuously variable ferroelectric phase shifters to minimize their performance variations over temperature. Various compositions of barium strontium titanate (BST) thin films on sapphire substrates were characterized in the temperature range of 0/spl deg/C-80/spl deg/C to assess their change in capacitance and tenability. It was found that a minimum capacitance variation (C/sub max//C/sub min/) of around 1.17 could be obtained using a Ba/Sr ratio of 1.2 and (Ba+Sr)/Ti ratio of 0.8. Based on this composition, all-pass network phase shifters were designed using 2 /spl mu/m- and 4 /spl mu/m-spaced interdigital capacitors (IDCs). In the case of the phase shifter with 2 /spl mu/m-spaced IDC, a phase shift of more than 100/spl deg/ was obtained over a 40 V bias range at 2.4 GHz. The loss figure-of-merit (FOM) of the phase shifter was held to 62.5/spl deg//dB /spl plusmn/ 2.5/spl deg//dB from 10/spl deg/C to 75/spl deg/C. The variation of a phase shift was held to only 4/spl deg/ in the temperature range of 10/spl deg/C-50/spl deg/C.
{"title":"Design of ferroelectric phase shifters for minimum performance variation over temperature","authors":"Dongsu Kim, Sang-Soo Je, J. Kenney, P. Marry","doi":"10.1109/MWSYM.2004.1335861","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335861","url":null,"abstract":"This paper investigates design techniques for continuously variable ferroelectric phase shifters to minimize their performance variations over temperature. Various compositions of barium strontium titanate (BST) thin films on sapphire substrates were characterized in the temperature range of 0/spl deg/C-80/spl deg/C to assess their change in capacitance and tenability. It was found that a minimum capacitance variation (C/sub max//C/sub min/) of around 1.17 could be obtained using a Ba/Sr ratio of 1.2 and (Ba+Sr)/Ti ratio of 0.8. Based on this composition, all-pass network phase shifters were designed using 2 /spl mu/m- and 4 /spl mu/m-spaced interdigital capacitors (IDCs). In the case of the phase shifter with 2 /spl mu/m-spaced IDC, a phase shift of more than 100/spl deg/ was obtained over a 40 V bias range at 2.4 GHz. The loss figure-of-merit (FOM) of the phase shifter was held to 62.5/spl deg//dB /spl plusmn/ 2.5/spl deg//dB from 10/spl deg/C to 75/spl deg/C. The variation of a phase shift was held to only 4/spl deg/ in the temperature range of 10/spl deg/C-50/spl deg/C.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116670750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1336010
S. Amari, U. Rosenberg
The paper presents a new approach to implement a real transmission zero in a third order in-line pseudo-elliptic filter. The transmission zero is extracted at an internal node in the in-line structure and not at the input or the output as in the well-known extracted pole technique. It is shown that the coupling coefficient that is directly responsible for the real transmission zero becomes too large and physically unrealizable if the extraction is performed at the input or the output as in the extracted pole technique. On the other hand, all coupling coefficient remain realizable if the extraction is performed at internal nodes. Furthermore, internal "impedance zones" can be independently scaled without affecting the overall response of the filter. Example filters are designed to demonstrate the validity of the approach.
{"title":"A third order in-line pseudo-elliptic filter with a transmission zero extracted at its center","authors":"S. Amari, U. Rosenberg","doi":"10.1109/MWSYM.2004.1336010","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1336010","url":null,"abstract":"The paper presents a new approach to implement a real transmission zero in a third order in-line pseudo-elliptic filter. The transmission zero is extracted at an internal node in the in-line structure and not at the input or the output as in the well-known extracted pole technique. It is shown that the coupling coefficient that is directly responsible for the real transmission zero becomes too large and physically unrealizable if the extraction is performed at the input or the output as in the extracted pole technique. On the other hand, all coupling coefficient remain realizable if the extraction is performed at internal nodes. Furthermore, internal \"impedance zones\" can be independently scaled without affecting the overall response of the filter. Example filters are designed to demonstrate the validity of the approach.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121724467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335852
J. Lynch, E. Entchev, B. Lyons, A. Tessman, H. Massler, A. Leuther, M. Schlechtweg
The design and analysis of a multiplier chipset with an output at W-band is presented. The MMIC designs have been fabricated on a 0.13 /spl mu/m AlGaAs/InGaAs/GaAs pHEMT process. Particular emphasis has been placed on EM analysis of key components and the optimization of models suitable for use in circuit simulators based on the EM simulations. The results show a first iteration design with an on-wafer saturated output power of 20.2 dBm at 92 GHz and greater than 18 dBm over a 9% bandwidth from 87.5-95.5 GHz.
{"title":"Design and analysis of a W-band multiplier chipset","authors":"J. Lynch, E. Entchev, B. Lyons, A. Tessman, H. Massler, A. Leuther, M. Schlechtweg","doi":"10.1109/MWSYM.2004.1335852","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335852","url":null,"abstract":"The design and analysis of a multiplier chipset with an output at W-band is presented. The MMIC designs have been fabricated on a 0.13 /spl mu/m AlGaAs/InGaAs/GaAs pHEMT process. Particular emphasis has been placed on EM analysis of key components and the optimization of models suitable for use in circuit simulators based on the EM simulations. The results show a first iteration design with an on-wafer saturated output power of 20.2 dBm at 92 GHz and greater than 18 dBm over a 9% bandwidth from 87.5-95.5 GHz.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122735901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339068
K. Lin, R.H. Messerian, Y. Wang
A novel heterodyne scheme based on real-time digital signal processing is proposed for leakage cancellation in monostatic frequency modulated continuous wave (FMCW) radars. Compared to conventional analog implementation, the advantages of the proposed scheme include that the DC offset existing in analog mixers affecting the cancellation performance are eliminated. A radar test bed at 26 GHz has been built. The measurement results show more than 40 dB suppression in transmitter leakage, which proves the effectiveness of the proposed approach.
{"title":"A digital leakage cancellation scheme for monostatic FMCW radar","authors":"K. Lin, R.H. Messerian, Y. Wang","doi":"10.1109/MWSYM.2004.1339068","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339068","url":null,"abstract":"A novel heterodyne scheme based on real-time digital signal processing is proposed for leakage cancellation in monostatic frequency modulated continuous wave (FMCW) radars. Compared to conventional analog implementation, the advantages of the proposed scheme include that the DC offset existing in analog mixers affecting the cancellation performance are eliminated. A radar test bed at 26 GHz has been built. The measurement results show more than 40 dB suppression in transmitter leakage, which proves the effectiveness of the proposed approach.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131161267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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