Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335799
C. Metz, T. Baras
A low loss 3/spl times/3-way phase combiner for power amplifier load balancing in 3-sector wireless network cells is presented. Based on an air-filled coaxial double ring structure this design combines very low insertion loss with compact physical profile. Exemplary, the concept is studied for the PCS (personal communication service) transmit band from 1.91 GHz to 1.99 GHz by simulations. Measurements validate the predicted very low insertion loss of 0.05 dB, while return loss and port isolation are both better than 25 dB.
{"title":"3-way low loss phase combiner for power amplifier sharing in 3-sector cellular networks","authors":"C. Metz, T. Baras","doi":"10.1109/MWSYM.2004.1335799","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335799","url":null,"abstract":"A low loss 3/spl times/3-way phase combiner for power amplifier load balancing in 3-sector wireless network cells is presented. Based on an air-filled coaxial double ring structure this design combines very low insertion loss with compact physical profile. Exemplary, the concept is studied for the PCS (personal communication service) transmit band from 1.91 GHz to 1.99 GHz by simulations. Measurements validate the predicted very low insertion loss of 0.05 dB, while return loss and port isolation are both better than 25 dB.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132128978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339166
Sungjae Lee, K. Webb
A numerical approach to simulate the intrinsic noise sources within transistors is described. Using a 2D numerical device solver, spectral densities for the gate and drain noise current sources and their correlation are evaluated using a Green's function approach, an equivalent of Shockley's impedance field method. Case studies with AlGaN/GaN HEMTs compare the numerical simulation results to those from measurements, showing good agreement.
{"title":"Numerical noise model for the AlGaN/GaN HEMT","authors":"Sungjae Lee, K. Webb","doi":"10.1109/MWSYM.2004.1339166","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339166","url":null,"abstract":"A numerical approach to simulate the intrinsic noise sources within transistors is described. Using a 2D numerical device solver, spectral densities for the gate and drain noise current sources and their correlation are evaluated using a Green's function approach, an equivalent of Shockley's impedance field method. Case studies with AlGaN/GaN HEMTs compare the numerical simulation results to those from measurements, showing good agreement.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132525823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339089
R. Fratti, K. Hui
A distributed TIA with 180 Ohm transimpedance, 73 GHz 3 dB BW, group delay below 20 pS, 840 mVpp output swings, output return loss better than 15 dB through 40 GHz and a linear range above 3 mA input detector current is presented. The amplifier employs a gm tapering technique that improves transimpedance without a significant increase in power consumption. Optical-electrical performance is presented demonstrating performance suitable for both RZ and NRZ 40 GB/s systems.
{"title":"A 73 GHz, 180 Ohm PHEMT transimpedance amplifier, employing gm tapering, for OC768 optical receivers","authors":"R. Fratti, K. Hui","doi":"10.1109/MWSYM.2004.1339089","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339089","url":null,"abstract":"A distributed TIA with 180 Ohm transimpedance, 73 GHz 3 dB BW, group delay below 20 pS, 840 mVpp output swings, output return loss better than 15 dB through 40 GHz and a linear range above 3 mA input detector current is presented. The amplifier employs a gm tapering technique that improves transimpedance without a significant increase in power consumption. Optical-electrical performance is presented demonstrating performance suitable for both RZ and NRZ 40 GB/s systems.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130021437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338954
S. Delcourt, G. Dambrine, N. Bourzgui, S. Lépilliet, C. Laporte, Jean-Philippe Fraysse, M. Maignan
A methodology to perform accurate on-wafer high-frequency noise measurements at cryogenic temperatures (77K) is presented. In this work, the distribution of the temperature along probes and cables at low temperatures is carefully taken into account in the de-embedding process using a 3-D thermal modelling software (/spl reg/ANSYS) and thermal measurements. Cables and probes are modelled in /spl reg/ADS software using a distributed RLCG network associated to this temperature distribution. The validity of this model has been checked by measuring the noise power of a 50 /spl Omega/ on-wafer resistance placed at several low temperatures. Finally, we apply this technique to the noise characterization of sub-100 nm gate's length MM-HEMT at 77K and 173K.
{"title":"A nonuniform thermal de-embedding approach for cryogenic on-wafer high-frequency noise measurements","authors":"S. Delcourt, G. Dambrine, N. Bourzgui, S. Lépilliet, C. Laporte, Jean-Philippe Fraysse, M. Maignan","doi":"10.1109/MWSYM.2004.1338954","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338954","url":null,"abstract":"A methodology to perform accurate on-wafer high-frequency noise measurements at cryogenic temperatures (77K) is presented. In this work, the distribution of the temperature along probes and cables at low temperatures is carefully taken into account in the de-embedding process using a 3-D thermal modelling software (/spl reg/ANSYS) and thermal measurements. Cables and probes are modelled in /spl reg/ADS software using a distributed RLCG network associated to this temperature distribution. The validity of this model has been checked by measuring the noise power of a 50 /spl Omega/ on-wafer resistance placed at several low temperatures. Finally, we apply this technique to the noise characterization of sub-100 nm gate's length MM-HEMT at 77K and 173K.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130181790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338912
C. Rodenbeck, Ming-yi Li, K. Chang
This paper presents a phased array architecture for retrodirective microwave wireless power transmission from the space solar power satellite (SPS). The proposed architecture uses a 2.9-GHz pilot beam and a 5.8-GHz transmit beam, with retrodirective phasing implemented directly at RF. Experimental and theoretical results are given to validate the approach.
{"title":"A phased-array architecture for retrodirective microwave power transmission from the space solar power satellite","authors":"C. Rodenbeck, Ming-yi Li, K. Chang","doi":"10.1109/MWSYM.2004.1338912","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338912","url":null,"abstract":"This paper presents a phased array architecture for retrodirective microwave wireless power transmission from the space solar power satellite (SPS). The proposed architecture uses a 2.9-GHz pilot beam and a 5.8-GHz transmit beam, with retrodirective phasing implemented directly at RF. Experimental and theoretical results are given to validate the approach.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130197292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339171
J. Upshur, C. White, M. E. Bayne, B. Davis, L. Walker, M. Reece, W. L. Thompson, S. Cheng, R. Wallis
This paper presents recent advances in the state-of-the-art of neural network modeling of microwave FET devices. Enhanced accuracy of the adaptive knowledge-based neural network (AKBNN) model is shown by comparing predicted load-pull performance of the device to measurements in an automated harmonic load-pull system. Test devices are a 1.2 mm HFET measured at 2.2 GHz, and a 4.8 mm pHEMT at 8.4 GHz. Modeled versus measured comparisons include power-added efficiency and output power under fundamental frequency and second and third harmonic frequency tuning. The effectiveness of this modeling approach for the design of high-efficiency power amplifiers operating in Class-E or Class-F modes is discussed.
本文介绍了微波场效应管器件神经网络建模的最新进展。通过将预测的负载-拉力性能与自动化谐波负载-拉力系统的测量结果进行比较，证明了自适应知识神经网络(AKBNN)模型提高了精度。测试器件为1.2 mm HFET，测量频率为2.2 GHz, 4.8 mm pHEMT测量频率为8.4 GHz。模型与测量值的比较包括在基频和二、三次谐波频率调谐下的功率增加效率和输出功率。讨论了该建模方法对设计工作在e类或f类模式下的高效功率放大器的有效性。
{"title":"Advanced non-linear model for accurate prediction of harmonically terminated power amplifier performance","authors":"J. Upshur, C. White, M. E. Bayne, B. Davis, L. Walker, M. Reece, W. L. Thompson, S. Cheng, R. Wallis","doi":"10.1109/MWSYM.2004.1339171","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339171","url":null,"abstract":"This paper presents recent advances in the state-of-the-art of neural network modeling of microwave FET devices. Enhanced accuracy of the adaptive knowledge-based neural network (AKBNN) model is shown by comparing predicted load-pull performance of the device to measurements in an automated harmonic load-pull system. Test devices are a 1.2 mm HFET measured at 2.2 GHz, and a 4.8 mm pHEMT at 8.4 GHz. Modeled versus measured comparisons include power-added efficiency and output power under fundamental frequency and second and third harmonic frequency tuning. The effectiveness of this modeling approach for the design of high-efficiency power amplifiers operating in Class-E or Class-F modes is discussed.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134115101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339091
K. Inoue, M. Nagahara, N. Ui, H. Haematsu, S. Sano, J. Fukaya
This paper describes a successfully developed L-band FET for 28 V operation. The FET structure was adequately designed to realize breakdown voltage of 84 V and a gradual doping channel was adopted to improve the linearity. The FET realizes record operation voltage up to 42 V. The FET also exhibits power density of 1.05 W/mm, linear gain of 17.2 dB and IM3 of -33 dBc. A strait IM3 profile is obtained and so-called "plateau" profile is extinct. In addition, the estimated MTTF at Tch of 145/spl deg/C is longer than 4/spl times/10/sup 6/ hours.
{"title":"A high gain L-band GaAs FET technology for 28 V operation","authors":"K. Inoue, M. Nagahara, N. Ui, H. Haematsu, S. Sano, J. Fukaya","doi":"10.1109/MWSYM.2004.1339091","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339091","url":null,"abstract":"This paper describes a successfully developed L-band FET for 28 V operation. The FET structure was adequately designed to realize breakdown voltage of 84 V and a gradual doping channel was adopted to improve the linearity. The FET realizes record operation voltage up to 42 V. The FET also exhibits power density of 1.05 W/mm, linear gain of 17.2 dB and IM3 of -33 dBc. A strait IM3 profile is obtained and so-called \"plateau\" profile is extinct. In addition, the estimated MTTF at Tch of 145/spl deg/C is longer than 4/spl times/10/sup 6/ hours.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133938254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339224
F. R. de Sousa, B. Huyart
Emerging wireless standards have pushed researchers to look for new RF architectures capable of operating at several frequency bands. Direct conversion between baseband and RF signals is gaining terrain towards becoming the RF front-end of choice. Six and five-port direct conversion receivers have demonstrated being an interesting technique since they can be designed and calibrated to operate in a wide frequency band. We present in this paper a new architecture for direct up-and-down conversion between baseband and RF signals. The main advantage of the proposal is its wideband operation due to a redundant vector basis.
{"title":"A novel RF front-end architecture for multi-band transceivers","authors":"F. R. de Sousa, B. Huyart","doi":"10.1109/MWSYM.2004.1339224","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339224","url":null,"abstract":"Emerging wireless standards have pushed researchers to look for new RF architectures capable of operating at several frequency bands. Direct conversion between baseband and RF signals is gaining terrain towards becoming the RF front-end of choice. Six and five-port direct conversion receivers have demonstrated being an interesting technique since they can be designed and calibrated to operate in a wide frequency band. We present in this paper a new architecture for direct up-and-down conversion between baseband and RF signals. The main advantage of the proposal is its wideband operation due to a redundant vector basis.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128953753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338889
Jang-Sik Yoon, Jun-Goo Kim, Jun-Seok Park, Choen-Seok Park, Jae-Bong Lim, Hong‐Gu Cho, Kwang-Yong Kang
In this paper, we proposed a DGS (defected ground structure) microstrip resonator. The proposed DGS resonator has the resonant and anti-resonant characteristic that is very similar to those of a SAW resonator of a FBAR. In order to confirm the validity of the proposed resonator, we designed and implemented bandpass filters by using series and parallel resonators.
{"title":"A new DGS resonator and its application to bandpass filter design","authors":"Jang-Sik Yoon, Jun-Goo Kim, Jun-Seok Park, Choen-Seok Park, Jae-Bong Lim, Hong‐Gu Cho, Kwang-Yong Kang","doi":"10.1109/MWSYM.2004.1338889","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338889","url":null,"abstract":"In this paper, we proposed a DGS (defected ground structure) microstrip resonator. The proposed DGS resonator has the resonant and anti-resonant characteristic that is very similar to those of a SAW resonator of a FBAR. In order to confirm the validity of the proposed resonator, we designed and implemented bandpass filters by using series and parallel resonators.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133547612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339190
S. Muller, P. Scheele, C. Weil, M. Wittek, C. Hock, R. Jakoby
A tunable broadband inverted microstrip line phase shifter filled with Liquid Crystals (LCs) is investigated between 1.125 GHz and 35 GHz at room temperature. The effective dielectric anisotropy is tuned by a DC-voltage of up to 30 V. In addition to standard LCs like K15 (5CB), a novel highly anisotropic LC mixture is characterized by a resonator method at 8.5 GHz, showing a very high dielectric anisotropy /spl Delta/n of 0.32 for the novel mixture compared to 0.13 for K15. These LCs are filled into two inverted microstrip line phase shifter devices with different polyimide films and heights. With a physical length of 50 mm, the insertion losses are about 4 dB for the novel mixture compared to 6 dB for K15 at 24 GHz. A differential phase shift of 360/spl deg/ can be achieved at 30 GHz with the novel mixture. The figure-of-merit of the phase shifter exceeds 110/spl deg//dB for the novel mixture compared to 21/spl deg//dB for K15 at 24 GHz. To our knowledge, this is the best value above 20 GHz at room temperature demonstrated for a tunable phase shifter based on nonlinear dielectrics up to now. This substantial progress opens up totally new low-cost LC applications beyond optics.
{"title":"Tunable passive phase shifter for microwave applications using highly anisotropic liquid crystals","authors":"S. Muller, P. Scheele, C. Weil, M. Wittek, C. Hock, R. Jakoby","doi":"10.1109/MWSYM.2004.1339190","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339190","url":null,"abstract":"A tunable broadband inverted microstrip line phase shifter filled with Liquid Crystals (LCs) is investigated between 1.125 GHz and 35 GHz at room temperature. The effective dielectric anisotropy is tuned by a DC-voltage of up to 30 V. In addition to standard LCs like K15 (5CB), a novel highly anisotropic LC mixture is characterized by a resonator method at 8.5 GHz, showing a very high dielectric anisotropy /spl Delta/n of 0.32 for the novel mixture compared to 0.13 for K15. These LCs are filled into two inverted microstrip line phase shifter devices with different polyimide films and heights. With a physical length of 50 mm, the insertion losses are about 4 dB for the novel mixture compared to 6 dB for K15 at 24 GHz. A differential phase shift of 360/spl deg/ can be achieved at 30 GHz with the novel mixture. The figure-of-merit of the phase shifter exceeds 110/spl deg//dB for the novel mixture compared to 21/spl deg//dB for K15 at 24 GHz. To our knowledge, this is the best value above 20 GHz at room temperature demonstrated for a tunable phase shifter based on nonlinear dielectrics up to now. This substantial progress opens up totally new low-cost LC applications beyond optics.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132587711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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