Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338956
M. Janezic, E. Kuester, J. Jarvis
We discuss a theoretical model describing the split-cylinder resonator for non-destructive measurement of a dielectric substrate's relative permittivity and loss tangent. This improved model properly accounts for the fringing electric and magnetic fields in the dielectric substrate. Previously, the split-cylinder resonator has been used for single-frequency permittivity and loss tangent measurements using only the fundamental TE/sub 011/ resonant mode. By including high-order TE/sub 0np/ modes, we demonstrate how to measure the relative permittivity and loss tangent of dielectric substrates over an extended frequency range. We validated the new model by measuring the permittivity and loss tangent of fused-silica substrates from 10 to 50 GHz and comparing with results obtained with circular-cylindrical cavity, a dielectric-post resonator, and several split-post resonators.
{"title":"Broadband complex permittivity measurements of dielectric substrates using a split-cylinder resonator","authors":"M. Janezic, E. Kuester, J. Jarvis","doi":"10.1109/MWSYM.2004.1338956","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338956","url":null,"abstract":"We discuss a theoretical model describing the split-cylinder resonator for non-destructive measurement of a dielectric substrate's relative permittivity and loss tangent. This improved model properly accounts for the fringing electric and magnetic fields in the dielectric substrate. Previously, the split-cylinder resonator has been used for single-frequency permittivity and loss tangent measurements using only the fundamental TE/sub 011/ resonant mode. By including high-order TE/sub 0np/ modes, we demonstrate how to measure the relative permittivity and loss tangent of dielectric substrates over an extended frequency range. We validated the new model by measuring the permittivity and loss tangent of fused-silica substrates from 10 to 50 GHz and comparing with results obtained with circular-cylindrical cavity, a dielectric-post resonator, and several split-post resonators.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125347914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339122
K. Hashimoto, H. Asano, T. Omori, M. Yamaguchi
This paper discusses the application of Love mode propagating on Cu-grating/rotated YX-LiNbO/sub 3/-substrate structure to the development of ultra-wideband and low-loss RF SAW filters. Theoretical analysis suggested that high performance resonators with very small capacitance ratio would be realised using Cu gratings of the thickness of several percent of wavelength. It was also suggested that in particular, on 15/spl deg/YX-LiNbO/sub 3/-substrate structure, the spurious response due to Rayleigh mode could effectively be suppressed. An IDT-type one-port SAW resonator and ladder-type SAW filter were fabricated on the Cu-grating/15/spl deg/YX-LiNbO/sub 3/-substrate structure, and their high performances are demonstrated with discussion.
{"title":"Ultra wideband Love wave devices employing Cu-grating/rotated YX LiNbO/sub 3/-substrate structure","authors":"K. Hashimoto, H. Asano, T. Omori, M. Yamaguchi","doi":"10.1109/MWSYM.2004.1339122","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339122","url":null,"abstract":"This paper discusses the application of Love mode propagating on Cu-grating/rotated YX-LiNbO/sub 3/-substrate structure to the development of ultra-wideband and low-loss RF SAW filters. Theoretical analysis suggested that high performance resonators with very small capacitance ratio would be realised using Cu gratings of the thickness of several percent of wavelength. It was also suggested that in particular, on 15/spl deg/YX-LiNbO/sub 3/-substrate structure, the spurious response due to Rayleigh mode could effectively be suppressed. An IDT-type one-port SAW resonator and ladder-type SAW filter were fabricated on the Cu-grating/15/spl deg/YX-LiNbO/sub 3/-substrate structure, and their high performances are demonstrated with discussion.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125352037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338998
A. H. Aly, D.W. Beishline, B. El-sharawy
An on-chip filter using monolithic transformer that can be integrated on a Si substrate is presented. The new filter topology has been fabricated using Motorola 0.18 micron copper process. Measurement results show significant improvement in Q of the present design compared to the inductor implementation. The size and Q advantages of the new topology can be useful in cost sensitive consumer products.
{"title":"Filter integration using on-chip transformers","authors":"A. H. Aly, D.W. Beishline, B. El-sharawy","doi":"10.1109/MWSYM.2004.1338998","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338998","url":null,"abstract":"An on-chip filter using monolithic transformer that can be integrated on a Si substrate is presented. The new filter topology has been fabricated using Motorola 0.18 micron copper process. Measurement results show significant improvement in Q of the present design compared to the inductor implementation. The size and Q advantages of the new topology can be useful in cost sensitive consumer products.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125439805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335795
P. Cabral, J. Pedro, N. Carvalho
This paper presents a new nonlinear device model, for microwave power GaN HEMTs, amenable for integration into a commercial harmonic balance simulator. All the steps taken to extract it are explained, starting with the extrinsic elements' determination and ending with the intrinsic ones. This model was validated by comparing measured and simulated output power and intermodulation distortion data of a GaN HEMT. Very good agreement was obtained from small- to large-signal excitation regimes.
{"title":"New nonlinear device model for microwave power GaN HEMTs","authors":"P. Cabral, J. Pedro, N. Carvalho","doi":"10.1109/MWSYM.2004.1335795","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335795","url":null,"abstract":"This paper presents a new nonlinear device model, for microwave power GaN HEMTs, amenable for integration into a commercial harmonic balance simulator. All the steps taken to extract it are explained, starting with the extrinsic elements' determination and ending with the intrinsic ones. This model was validated by comparing measured and simulated output power and intermodulation distortion data of a GaN HEMT. Very good agreement was obtained from small- to large-signal excitation regimes.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126866195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338922
M. Celuch-Marcysiak
FDTD solutions in lossy media are shown to comprise two orthogonal families of S- and P-eigenmodes. The S-modes are counterparts of physical waves, retaining their fundamental properties such as current continuity. Contrary to the lossless case, they are subject to bilateral dispersion, although the numerical anisotropy of the FDTD mesh is actually reduced. The P-modes do not propagate and decay exponentially in time. This makes Maxwell FDTD suitable for coupling with other physical solvers, which may change the electromagnetic media properties and boundaries in time. Any thus generated numerical changes are included in and dissipated by the P-modes.
{"title":"Extended theory of FDTD S- and P-eigenmodes in lossy media and its application to the analysis of coupled problems","authors":"M. Celuch-Marcysiak","doi":"10.1109/MWSYM.2004.1338922","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338922","url":null,"abstract":"FDTD solutions in lossy media are shown to comprise two orthogonal families of S- and P-eigenmodes. The S-modes are counterparts of physical waves, retaining their fundamental properties such as current continuity. Contrary to the lossless case, they are subject to bilateral dispersion, although the numerical anisotropy of the FDTD mesh is actually reduced. The P-modes do not propagate and decay exponentially in time. This makes Maxwell FDTD suitable for coupling with other physical solvers, which may change the electromagnetic media properties and boundaries in time. Any thus generated numerical changes are included in and dissipated by the P-modes.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126935551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1336007
R. Levy
Previous techniques for direct design of cascaded trisection (CT) filters are extended to give designs having the maximum number of finite frequency transmission zeros without "nested" cross couplings, i.e. low sensitivity is obtained with non-interacting cross couplings. In previous realizations the cross couplings of CT sections have been either capacitive or inductive, whereas the new section has both types of couplings in parallel, giving a resonated CT section having two finite frequency transmission zeros for each set of three nodes. The filters have the potential of providing lower insertion loss and/or smaller size compared with existing techniques.
{"title":"New cascaded trisections with resonant cross-couplings (CTR sections) applied to the design of optimal filters","authors":"R. Levy","doi":"10.1109/MWSYM.2004.1336007","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1336007","url":null,"abstract":"Previous techniques for direct design of cascaded trisection (CT) filters are extended to give designs having the maximum number of finite frequency transmission zeros without \"nested\" cross couplings, i.e. low sensitivity is obtained with non-interacting cross couplings. In previous realizations the cross couplings of CT sections have been either capacitive or inductive, whereas the new section has both types of couplings in parallel, giving a resonated CT section having two finite frequency transmission zeros for each set of three nodes. The filters have the potential of providing lower insertion loss and/or smaller size compared with existing techniques.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121312248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338895
J. Buckwalter, B. Analui, A. Hajimiri
This paper resolves the jitter impairment of non-return-to-zero data in transmission lines. The limited bandwidth of the transmission line introduces data-dependent jitter. Crosstalk between neighbouring lines results in bounded uncorrelated jitter in the data eye. An analytical approach to representing data-dependent jitter and crosstalk-induced bounded uncorrelated jitter is presented. Comparison with jitter measurements of microstrip lines on FR4 board demonstrated accuracy to within 15% of the predictions for deterministic jitter.
{"title":"Data-dependent jitter and crosstalk-induced bounded uncorrelated jitter in copper interconnects","authors":"J. Buckwalter, B. Analui, A. Hajimiri","doi":"10.1109/MWSYM.2004.1338895","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338895","url":null,"abstract":"This paper resolves the jitter impairment of non-return-to-zero data in transmission lines. The limited bandwidth of the transmission line introduces data-dependent jitter. Crosstalk between neighbouring lines results in bounded uncorrelated jitter in the data eye. An analytical approach to representing data-dependent jitter and crosstalk-induced bounded uncorrelated jitter is presented. Comparison with jitter measurements of microstrip lines on FR4 board demonstrated accuracy to within 15% of the predictions for deterministic jitter.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121539317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1335899
M. Handtmann, Stefan Marksteiner, J. Kaitila, R. Aigner
RF filters for GPS receivers inside phones require extreme stopband attenuation in order to protect the weak GPS signals from interference by the cellular phone bands and ISM bands. In contrast to RF filters for cellular phone bands which typically require a relative bandwidth up to 4.5% a GPS filter needs less than 0.5% relative bandwidth. The reduced bandwidth requirement can be traded in for low insertion loss and high stopband attenuation. The impact of this tradeoff on the design of the bulk acoustic wave (BAW) filters is discussed in this paper. The choice of the filter topology and acoustic layer stack forming the resonators as well as the spurious mode suppression need to be re-optimized under the new constraints. As a result of this optimization, a filter for GPS signals with a minimum insertion loss of 1.2 dB and a stopband attenuation of 50 dB is presented.
{"title":"Bulk acoustic wave filters for GPS with extreme stopband attenuation","authors":"M. Handtmann, Stefan Marksteiner, J. Kaitila, R. Aigner","doi":"10.1109/MWSYM.2004.1335899","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1335899","url":null,"abstract":"RF filters for GPS receivers inside phones require extreme stopband attenuation in order to protect the weak GPS signals from interference by the cellular phone bands and ISM bands. In contrast to RF filters for cellular phone bands which typically require a relative bandwidth up to 4.5% a GPS filter needs less than 0.5% relative bandwidth. The reduced bandwidth requirement can be traded in for low insertion loss and high stopband attenuation. The impact of this tradeoff on the design of the bulk acoustic wave (BAW) filters is discussed in this paper. The choice of the filter topology and acoustic layer stack forming the resonators as well as the spurious mode suppression need to be re-optimized under the new constraints. As a result of this optimization, a filter for GPS signals with a minimum insertion loss of 1.2 dB and a stopband attenuation of 50 dB is presented.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121629496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1339141
D. Hartskeerl, H.G.A. Huizing, P. Deixler, W. van Noort, P. Magnée
This paper reports on the power performance of RF high-breakdown voltage (>16.5 V) SiGeC HBT power devices, which have been successfully integrated into a BiCMOS platform featuring 0.25 /spl mu/m CMOS and a full set of high-quality passives. These devices have an excellent tradeoff between power gain and breakdown voltage. The high speed combined with low parasitic elements enables over 80% power-added efficiency (PAE) and corresponding power gains (G/sub p/) of 18 dB and higher over a relatively wide range of power densities. A peak performance of 88% PAE and 20 dB G/sub p/ is obtained at 0.25 W continuous-wave output power with a 792 /spl mu/m emitter length device (396 /spl mu/m/sup 2/ emitter area) operating at 1.8 GHz with 3.3 V supply voltage. Excellent power scaling versus emitter area is obtained. Measured output power shows an ideal increase of 3 dB when doubling the area. Also the corresponding matching scales. This is achieved by minimizing parasitic elements using deep trench isolation and careful design of the metal wiring. Furthermore, the base and emitter doping profiles are tuned to minimize the temperature dependence of the power gain. In combination with the high PAE, no effect of self-heating on power scaling is found.
本文报道了射频高击穿电压(>16.5 V) SiGeC HBT功率器件的功率性能，该器件已成功集成到具有0.25 /spl μ m CMOS和全套高质量无源的BiCMOS平台上。这些器件在功率增益和击穿电压之间有很好的平衡。高速度与低寄生元件相结合，在相对较宽的功率密度范围内，可实现超过80%的功率附加效率(PAE)和相应的功率增益(G/sub p/)为18 dB或更高。在0.25 W连续波输出功率下，发射极长度为792 /spl μ m (396 /spl μ l μ m/sup 2/发射极面积)，工作频率为1.8 GHz，电源电压为3.3 V，峰值性能为88% PAE，峰值性能为20 dB G/sub p/。获得了优异的功率与发射极面积的比例关系。测量的输出功率显示，当面积加倍时，理想的增加了3 dB。还有相应的匹配尺度。这是通过使用深沟隔离和精心设计的金属布线来最大限度地减少寄生元件来实现的。此外，基极和发射极掺杂谱线经过调整，使功率增益的温度依赖性最小化。结合高PAE，没有发现自热对功率结垢的影响。
{"title":"High performance SiGeC HBT integrated into a 0.25 /spl mu/m BiCMOS technology featuring record 88% power-added efficiency","authors":"D. Hartskeerl, H.G.A. Huizing, P. Deixler, W. van Noort, P. Magnée","doi":"10.1109/MWSYM.2004.1339141","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1339141","url":null,"abstract":"This paper reports on the power performance of RF high-breakdown voltage (>16.5 V) SiGeC HBT power devices, which have been successfully integrated into a BiCMOS platform featuring 0.25 /spl mu/m CMOS and a full set of high-quality passives. These devices have an excellent tradeoff between power gain and breakdown voltage. The high speed combined with low parasitic elements enables over 80% power-added efficiency (PAE) and corresponding power gains (G/sub p/) of 18 dB and higher over a relatively wide range of power densities. A peak performance of 88% PAE and 20 dB G/sub p/ is obtained at 0.25 W continuous-wave output power with a 792 /spl mu/m emitter length device (396 /spl mu/m/sup 2/ emitter area) operating at 1.8 GHz with 3.3 V supply voltage. Excellent power scaling versus emitter area is obtained. Measured output power shows an ideal increase of 3 dB when doubling the area. Also the corresponding matching scales. This is achieved by minimizing parasitic elements using deep trench isolation and careful design of the metal wiring. Furthermore, the base and emitter doping profiles are tuned to minimize the temperature dependence of the power gain. In combination with the high PAE, no effect of self-heating on power scaling is found.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126803552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-06-06DOI: 10.1109/MWSYM.2004.1338946
T. Kokkinos, R. Islam, C. Sarris, G. Eleftheriades
A methodology for the time-domain analysis of negative refractive index (NRI) media is proposed in this paper. Based on circuit models of NRI meta-materials and associated planar implementations that have been recently demonstrated, an extended FDTD approach is formulated, combining Maxwell's equations with lumped element voltage-current characteristics. Compared to previous FDTD modelling of NRI materials as negative dispersive index media, the proposed method presents the significant advantage of relying on simple and well-known mesh truncation method and not suffering from instabilities related to the Lorentz model poles. The analysis is accelerated by invoking periodic boundary conditions that allow for the simulation of a single unit cell as opposed to the whole grid. As a time-domain technique, the proposed one allows for the clarification of the transients involved with the evolution of backward waves and negative refraction in NRI meta-materials and the verification of the fact that causality is preserved throughout. Numerical results include validation against finite element analysis and converge studies that indicate the efficiency and computational speed of this method.
{"title":"Rigorous analysis of negative refractive index metamaterials using FDTD with embedded lumped elements","authors":"T. Kokkinos, R. Islam, C. Sarris, G. Eleftheriades","doi":"10.1109/MWSYM.2004.1338946","DOIUrl":"https://doi.org/10.1109/MWSYM.2004.1338946","url":null,"abstract":"A methodology for the time-domain analysis of negative refractive index (NRI) media is proposed in this paper. Based on circuit models of NRI meta-materials and associated planar implementations that have been recently demonstrated, an extended FDTD approach is formulated, combining Maxwell's equations with lumped element voltage-current characteristics. Compared to previous FDTD modelling of NRI materials as negative dispersive index media, the proposed method presents the significant advantage of relying on simple and well-known mesh truncation method and not suffering from instabilities related to the Lorentz model poles. The analysis is accelerated by invoking periodic boundary conditions that allow for the simulation of a single unit cell as opposed to the whole grid. As a time-domain technique, the proposed one allows for the clarification of the transients involved with the evolution of backward waves and negative refraction in NRI meta-materials and the verification of the fact that causality is preserved throughout. Numerical results include validation against finite element analysis and converge studies that indicate the efficiency and computational speed of this method.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114165561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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