Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22225
M. Sobhy, F. Bassirato
A nonlinear model of a Schottky diode was developed that is suitable for application in microwave mixer circuits. The model was used in the design of a microwave balanced mixer. The mixer circuit was analyzed using a general nonlinear circuit simulation program. The results of the simulation and measurements are in very close agreement, which indicates the validity of the diode model and the accuracy of the simulation program. The designed mixer has a conversion loss of 6 dB and a noise figure of 6 dB.<>
{"title":"Non-linear modelling and design of microwave mixers","authors":"M. Sobhy, F. Bassirato","doi":"10.1109/MWSYM.1988.22225","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22225","url":null,"abstract":"A nonlinear model of a Schottky diode was developed that is suitable for application in microwave mixer circuits. The model was used in the design of a microwave balanced mixer. The mixer circuit was analyzed using a general nonlinear circuit simulation program. The results of the simulation and measurements are in very close agreement, which indicates the validity of the diode model and the accuracy of the simulation program. The designed mixer has a conversion loss of 6 dB and a noise figure of 6 dB.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"132 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132026212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22054
J. Purviance, W. Brakensiek, D. Monteith, T. Ferguson
Circuit yield is evaluated for the commonly used narrowband lumped- and distributed-parameter matching structures. It is shown that each structure has highest yield for load impedances in a given region on the Smith chart. A simple design chart is developed which gives the designer a high-yield matching structure for any given load impedance. Two examples illustrate its use.<>
{"title":"Matching structures for high yield amplifier design","authors":"J. Purviance, W. Brakensiek, D. Monteith, T. Ferguson","doi":"10.1109/MWSYM.1988.22054","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22054","url":null,"abstract":"Circuit yield is evaluated for the commonly used narrowband lumped- and distributed-parameter matching structures. It is shown that each structure has highest yield for load impedances in a given region on the Smith chart. A simple design chart is developed which gives the designer a high-yield matching structure for any given load impedance. Two examples illustrate its use.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132132083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22071
J. Pond, C. Krowne
A complex resistive boundary condition is used to accurately model very thin superconducting films used in microstrip transmission lines. The imaginary part of the conductivity is a measure of the energy stored in the superconductor, which contributes to the slow-wave propagation behavior of these transmission lines. Numerical solutions of superconducting microstrip are obtained and the dependence of the complex propagation constant on the microstrip geometry and the superconducting thin film properties is investigated.<>
{"title":"Slow-wave properties of superconducting microstrip transmission lines","authors":"J. Pond, C. Krowne","doi":"10.1109/MWSYM.1988.22071","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22071","url":null,"abstract":"A complex resistive boundary condition is used to accurately model very thin superconducting films used in microstrip transmission lines. The imaginary part of the conductivity is a measure of the energy stored in the superconductor, which contributes to the slow-wave propagation behavior of these transmission lines. Numerical solutions of superconducting microstrip are obtained and the dependence of the complex propagation constant on the microstrip geometry and the superconducting thin film properties is investigated.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116698677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22153
A. Gopinath
A computer model of GaAs p-i-n diodes shows that when the intrinsic-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggests that diodes now have i-layers with lifetimes of about 10/sup -7/ s.<>
{"title":"Impedance of GaAs p-i-n diodes","authors":"A. Gopinath","doi":"10.1109/MWSYM.1988.22153","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22153","url":null,"abstract":"A computer model of GaAs p-i-n diodes shows that when the intrinsic-layer (i-layer) thickness is greater than about four times the diffusion length, diode forward resistance can be high. Comparison with measured I-V characteristics suggests that diodes now have i-layers with lifetimes of about 10/sup -7/ s.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132130514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22208
M.K. Ferrand
A brief history of electronic eavesdropping (bugging) is given, and techniques used by persons wishing to gain confidential information are described. Various methods of detecting radiofrequency transmitting devices are explained as are the limitations of conventional means for locating them. A device capable of transmitting an extremely pure fundamental signal at 915 MHz and listening to a harmonic signal reflected by semiconductor devices is explained. Its theory of operation and its component circuits are described.<>
{"title":"Hidden electronics detection","authors":"M.K. Ferrand","doi":"10.1109/MWSYM.1988.22208","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22208","url":null,"abstract":"A brief history of electronic eavesdropping (bugging) is given, and techniques used by persons wishing to gain confidential information are described. Various methods of detecting radiofrequency transmitting devices are explained as are the limitations of conventional means for locating them. A device capable of transmitting an extremely pure fundamental signal at 915 MHz and listening to a harmonic signal reflected by semiconductor devices is explained. Its theory of operation and its component circuits are described.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128505088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22080
E. Reese, J. Beall
The modeling techniques used to understand and predict the phenomena of frequency hops and holes in X-band and Ku band monolithic microwave integrated circuit (MMIC) voltage-controlled oscillators (VCOs) are described. The use of nonlinear circuit analysis has led to circuit improvements, including a novel lateral varactor structure compatible with FET devices and uniform ion-implanted material, realizing better Q. Devices were fabricated and tested, confirming the validity of the modeling and design approaches. Monolithic X-band and Ku-band VCOs realized continuous tuning over 5.9-12.6 GHz and 10.6-20.4 GHz, respectively; continuous tuning was retained over the temperature range -55 to +90 degrees C.<>
{"title":"Optimized X and Ku band GaAs MMIC varactor tuned FET oscillators","authors":"E. Reese, J. Beall","doi":"10.1109/MWSYM.1988.22080","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22080","url":null,"abstract":"The modeling techniques used to understand and predict the phenomena of frequency hops and holes in X-band and Ku band monolithic microwave integrated circuit (MMIC) voltage-controlled oscillators (VCOs) are described. The use of nonlinear circuit analysis has led to circuit improvements, including a novel lateral varactor structure compatible with FET devices and uniform ion-implanted material, realizing better Q. Devices were fabricated and tested, confirming the validity of the modeling and design approaches. Monolithic X-band and Ku-band VCOs realized continuous tuning over 5.9-12.6 GHz and 10.6-20.4 GHz, respectively; continuous tuning was retained over the temperature range -55 to +90 degrees C.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128535369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22161
R. Tucker
Recent progress in wideband semiconductor lasers and optical modulators is reviewed. The operating principles of lasers, electrooptic modulators and electroabsorption modulators are described. Based on the physics of operation of each device, the modulation characteristics, optical loss, and intrinsic bandwidth of lasers and modulators are compared. Optoelectronic models are presented which include device-circuit interactions. Using these models, limitations on device performance are noted.<>
{"title":"Wide-band semiconductor lasers and optical modulators for communications","authors":"R. Tucker","doi":"10.1109/MWSYM.1988.22161","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22161","url":null,"abstract":"Recent progress in wideband semiconductor lasers and optical modulators is reviewed. The operating principles of lasers, electrooptic modulators and electroabsorption modulators are described. Based on the physics of operation of each device, the modulation characteristics, optical loss, and intrinsic bandwidth of lasers and modulators are compared. Optoelectronic models are presented which include device-circuit interactions. Using these models, limitations on device performance are noted.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133372330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22149
E. Boch
A series diode microstrip doubler using a commercially available varactor diode has been developed using hard substrated technology in Q-band. The multiplier exhibited a conversion loss of less than 8 dB when driven by 200 mW. Temperature testing over the -60 to +100 degrees C range showed an output power variation of +or-1 dB. The design has exhibited the ability to withstand 30-g sine and 24-g rms vibration without failure.<>
{"title":"Design of a rugged millimeter-wave doubler using a series varactor configuration","authors":"E. Boch","doi":"10.1109/MWSYM.1988.22149","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22149","url":null,"abstract":"A series diode microstrip doubler using a commercially available varactor diode has been developed using hard substrated technology in Q-band. The multiplier exhibited a conversion loss of less than 8 dB when driven by 200 mW. Temperature testing over the -60 to +100 degrees C range showed an output power variation of +or-1 dB. The design has exhibited the ability to withstand 30-g sine and 24-g rms vibration without failure.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125915150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22030
G. Swift, D. I. Stones
A structure based on the radial wave power combiner has been developed that incorporates a radially periodic internal structure. This structure permits its design to be accomplished using techniques similar to those used for distributed-element filter design. Less than 0.3 dB insertion loss has been achieved over greater-than-one-octave bandwidth centered at 1200 MHz. The design technique achieves highly predictable performance, and is sufficiently general such that it may be applied to combiners of any order, operating bandwidth, and operating frequency.<>
{"title":"A comprehensive design technique for the radial wave power combiner","authors":"G. Swift, D. I. Stones","doi":"10.1109/MWSYM.1988.22030","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22030","url":null,"abstract":"A structure based on the radial wave power combiner has been developed that incorporates a radially periodic internal structure. This structure permits its design to be accomplished using techniques similar to those used for distributed-element filter design. Less than 0.3 dB insertion loss has been achieved over greater-than-one-octave bandwidth centered at 1200 MHz. The design technique achieves highly predictable performance, and is sufficiently general such that it may be applied to combiners of any order, operating bandwidth, and operating frequency.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130353873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22154
T. Martin, F. Wang, K. Chang
Two microstrip ring resonator circuits are described: an electrically switchable filter and a tunable switchable filter, both using p-i-n diodes. In the first circuit, a microstrip ring resonator loaded with two p-i-n diodes is developed as a switchable filter. By replacing one p-i-n diode with a varactor diode, the switchable filter is made electronically tunable. Over 20-dB isolation with 9% tuning bandwidth has been demonstrated. Equivalent circuits have been developed for both circuits. The analysis was based on the transmission-line model including the effects of diode parasitics, coupling gaps, dispersion, and mounting gap capacitance. The experimental results agree very well with the theoretical calculation.<>
{"title":"Electronically tunable and switchable filters using microstrip ring resonator circuits","authors":"T. Martin, F. Wang, K. Chang","doi":"10.1109/MWSYM.1988.22154","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22154","url":null,"abstract":"Two microstrip ring resonator circuits are described: an electrically switchable filter and a tunable switchable filter, both using p-i-n diodes. In the first circuit, a microstrip ring resonator loaded with two p-i-n diodes is developed as a switchable filter. By replacing one p-i-n diode with a varactor diode, the switchable filter is made electronically tunable. Over 20-dB isolation with 9% tuning bandwidth has been demonstrated. Equivalent circuits have been developed for both circuits. The analysis was based on the transmission-line model including the effects of diode parasitics, coupling gaps, dispersion, and mounting gap capacitance. The experimental results agree very well with the theoretical calculation.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127805984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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