Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22141
T. An, J. Mao, Q. Meng, H. Yan, J. Fang
An automatic test system for measuring network parameters at Q-band has been developed. The system is based on the conventional slotted line system and is controlled by the Apple II microcomputer. The principles, construction, and features of the system are presented. Typical results for complex reflection coefficient, voltage standing wave ratio, impedance, attenuation, and S-parameters are given. The system is expected to be valuable in developing test systems at the short-millimeter-wave band.<>
{"title":"Q-band computerized slotted line system","authors":"T. An, J. Mao, Q. Meng, H. Yan, J. Fang","doi":"10.1109/MWSYM.1988.22141","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22141","url":null,"abstract":"An automatic test system for measuring network parameters at Q-band has been developed. The system is based on the conventional slotted line system and is controlled by the Apple II microcomputer. The principles, construction, and features of the system are presented. Typical results for complex reflection coefficient, voltage standing wave ratio, impedance, attenuation, and S-parameters are given. The system is expected to be valuable in developing test systems at the short-millimeter-wave band.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114333732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22088
T. Nishikawa, K. Wakino, T. Hiratsuka, Y. Ishsikawa
An 800-MHz-band high-power filter using TM/sub 110/-mode dielectric resonators with a 25-MHz bandwidth is described. This elliptic function, six-pole filter has low dissipation characteristics and excellent temperature stability. Under high-power operation, the changes of the filter characteristics are negligible. The size of the filter is 200*140*60 mm (1700 cm/sup 3/), about one-fifth the volume of conventional high-power filters.<>
{"title":"800 MHz band high-power bandpass filter using TM/sub 110/ mode dielectric resonators for cellular base stations","authors":"T. Nishikawa, K. Wakino, T. Hiratsuka, Y. Ishsikawa","doi":"10.1109/MWSYM.1988.22088","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22088","url":null,"abstract":"An 800-MHz-band high-power filter using TM/sub 110/-mode dielectric resonators with a 25-MHz bandwidth is described. This elliptic function, six-pole filter has low dissipation characteristics and excellent temperature stability. Under high-power operation, the changes of the filter characteristics are negligible. The size of the filter is 200*140*60 mm (1700 cm/sup 3/), about one-fifth the volume of conventional high-power filters.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114610767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22040
J. Bandler, S.H. Chen, S. Ye, Q. Zhang
A robust approach to FET model parameter extraction is presented. By introducing DC constraints and formulating the modeling process as a complete and integrated optimization problem, the uniqueness and reliability of the extracted model parameters is improved. The approach uses multibias measurements and DC device characteristics in a sequential model building approach based on a decomposition dictionary that can be used to arrive at a suitable compromise between the simplicity and adequacy of the model. Novel automatic decomposition concepts for large-scale optimization are used to detect possible model topology deficiencies. A powerful l/sub 1/ optimization technique is used in the algorithm, and all the required gradients are provided through efficient adjoint analyses for both DC and AC sensitivities. A FET modeling example is described in detail to demonstrate the approach.<>
{"title":"Robust model parameter extraction using large-scale optimization concepts","authors":"J. Bandler, S.H. Chen, S. Ye, Q. Zhang","doi":"10.1109/MWSYM.1988.22040","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22040","url":null,"abstract":"A robust approach to FET model parameter extraction is presented. By introducing DC constraints and formulating the modeling process as a complete and integrated optimization problem, the uniqueness and reliability of the extracted model parameters is improved. The approach uses multibias measurements and DC device characteristics in a sequential model building approach based on a decomposition dictionary that can be used to arrive at a suitable compromise between the simplicity and adequacy of the model. Novel automatic decomposition concepts for large-scale optimization are used to detect possible model topology deficiencies. A powerful l/sub 1/ optimization technique is used in the algorithm, and all the required gradients are provided through efficient adjoint analyses for both DC and AC sensitivities. A FET modeling example is described in detail to demonstrate the approach.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115105559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22021
P. Polak-Dingels, H. Hung, T. Smith, H. Huang, K. Webb, C.H. Lee
A picosecond optical electronic sampling technique for the characterization of monolithic microwave integrated circuits (MMICs) has been developed. The measured time-domain response allows the spectral transfer function of the MMIC to be obtained. This technique was applied to characterize the frequency response of a two-stage Ka-band MMIC amplifier. The broadband results agree well with those obtained by conventional network analyzer measurements.<>
{"title":"On-wafer characterization of monolithic millimeter-wave integrated circuits by a picosecond optical electronic technique","authors":"P. Polak-Dingels, H. Hung, T. Smith, H. Huang, K. Webb, C.H. Lee","doi":"10.1109/MWSYM.1988.22021","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22021","url":null,"abstract":"A picosecond optical electronic sampling technique for the characterization of monolithic microwave integrated circuits (MMICs) has been developed. The measured time-domain response allows the spectral transfer function of the MMIC to be obtained. This technique was applied to characterize the frequency response of a two-stage Ka-band MMIC amplifier. The broadband results agree well with those obtained by conventional network analyzer measurements.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117134105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22042
W. Heinrich
A distributed MESFET noise analysis is presented and its results are used to determine the validity range of common lumped-element models. It is concluded that systematic investigation varying the equivalent-circuit elements within their realistic range confirmed that the distributed effects can be neglected in conventional submicron low-noise MESFETs. Practical gate-width design-values are given.<>
{"title":"Distributed analysis of submicron-MESFET noise-properties","authors":"W. Heinrich","doi":"10.1109/MWSYM.1988.22042","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22042","url":null,"abstract":"A distributed MESFET noise analysis is presented and its results are used to determine the validity range of common lumped-element models. It is concluded that systematic investigation varying the equivalent-circuit elements within their realistic range confirmed that the distributed effects can be neglected in conventional submicron low-noise MESFETs. Practical gate-width design-values are given.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"49 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117282000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22186
P. Bura, D. Gelerman
A 70-MHz to 6-GHz balanced FET converter is described that has a third-order intercept point of 26 dBm, a conversion gain of 3 dB, and 33 dB of local oscillator suppression. Its highly linear performance makes it suitable for 64-QAM radio. Bit error rates (BERs) lower than 10/sup -27/ were measured at the 2.7 dBm RMS (64-QAM) output level. The upconverter shows two advantages compared with a balanced diode converter: (1) a 2-dB intermediate frequency to 6 GHz gain compared with a 6-dB loss; and (2) a higher output level for the same linearity requirement.<>
{"title":"Balanced FET up-converter for 6 GHz, 64-QAM radio","authors":"P. Bura, D. Gelerman","doi":"10.1109/MWSYM.1988.22186","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22186","url":null,"abstract":"A 70-MHz to 6-GHz balanced FET converter is described that has a third-order intercept point of 26 dBm, a conversion gain of 3 dB, and 33 dB of local oscillator suppression. Its highly linear performance makes it suitable for 64-QAM radio. Bit error rates (BERs) lower than 10/sup -27/ were measured at the 2.7 dBm RMS (64-QAM) output level. The upconverter shows two advantages compared with a balanced diode converter: (1) a 2-dB intermediate frequency to 6 GHz gain compared with a 6-dB loss; and (2) a higher output level for the same linearity requirement.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124672571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22172
J. Adam, M. Daniel, S. Talisa
A magnetostatic wave filterbank consists of an array of narrowband magnetostatic-wave lines which have a common microstrip input transducer and separate output transducers. The center frequency of each channel is determined by a magnetic bias field supplied by a permanent magnet with a linear field gradient. A description is given of the construction and performance of an improved version of a 13-channel filterbank operating at S-band with a 24-MHz (3-dB) channel bandwidth and a 50-dB dynamic range. A comparison of present and projected performance data is given.<>
{"title":"A 13-channel magnetostatic wave filterbank","authors":"J. Adam, M. Daniel, S. Talisa","doi":"10.1109/MWSYM.1988.22172","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22172","url":null,"abstract":"A magnetostatic wave filterbank consists of an array of narrowband magnetostatic-wave lines which have a common microstrip input transducer and separate output transducers. The center frequency of each channel is determined by a magnetic bias field supplied by a permanent magnet with a linear field gradient. A description is given of the construction and performance of an improved version of a 13-channel filterbank operating at S-band with a 24-MHz (3-dB) channel bandwidth and a 50-dB dynamic range. A comparison of present and projected performance data is given.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128183167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22226
C. Guo, E. Ngoya, R. Quéré, M. Camiade, J. Obregon
A method is proposed for deriving the optimal operating conditions of a given MESFET needed to obtain an optimal frequency multiplier. The key point of this approach is that no topology of the embedding network is to be chosen a priori. The optimum bias voltages and the optimum load impedances (including possible feedback circuit) are found. The method has been applied to design doublers at low frequencies from 10-20 GHz and at millimeter-wave frequencies from 20-40 GHz. Although the experimental doublers are still under measurement, first results have given good agreement with theoretical predictions.<>
{"title":"Optimal CAD MESFETs frequency multipliers with and without feedback","authors":"C. Guo, E. Ngoya, R. Quéré, M. Camiade, J. Obregon","doi":"10.1109/MWSYM.1988.22226","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22226","url":null,"abstract":"A method is proposed for deriving the optimal operating conditions of a given MESFET needed to obtain an optimal frequency multiplier. The key point of this approach is that no topology of the embedding network is to be chosen a priori. The optimum bias voltages and the optimum load impedances (including possible feedback circuit) are found. The method has been applied to design doublers at low frequencies from 10-20 GHz and at millimeter-wave frequencies from 20-40 GHz. Although the experimental doublers are still under measurement, first results have given good agreement with theoretical predictions.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128276069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22016
M. Mehalic, C. Chan, R. Mittra
The S-parameters of coupled, tapered microstrip lines are calculated as function of frequency using an iteration-perturbation technique. Each tapered microstrip line is analyzed by dividing the line into small segments so that each segment can be approximated as a uniform line. For each frequency, starting with the static case, the effective dielectric constant, epsilon /sub r///sub eff/, is determined. This value is then used to compute the characteristic impedance of that section of line and the S-parameters are obtained using standard microwave analysis. The S-matrix is converted into a T-matrix, and since the sections are cascaded, all T-matrices are multiplied to drive a final T-matrix. This final T-matrix is then converted into an S-matrix, which is frequency dependent, and the mismatch introduced by the taper is obtained from the S-matrix.<>
{"title":"Investigation of tapered multiple microstrip lines for VLSI circuits","authors":"M. Mehalic, C. Chan, R. Mittra","doi":"10.1109/MWSYM.1988.22016","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22016","url":null,"abstract":"The S-parameters of coupled, tapered microstrip lines are calculated as function of frequency using an iteration-perturbation technique. Each tapered microstrip line is analyzed by dividing the line into small segments so that each segment can be approximated as a uniform line. For each frequency, starting with the static case, the effective dielectric constant, epsilon /sub r///sub eff/, is determined. This value is then used to compute the characteristic impedance of that section of line and the S-parameters are obtained using standard microwave analysis. The S-matrix is converted into a T-matrix, and since the sections are cascaded, all T-matrices are multiplied to drive a final T-matrix. This final T-matrix is then converted into an S-matrix, which is frequency dependent, and the mismatch introduced by the taper is obtained from the S-matrix.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128436170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22118
A. Shor
Broadband TEM power dividers have traditionally involved multisection or taper designs. The author briefly reviews compensation techniques that can be used to achieve broadband designs with one or two sections. The compensating elements can be either lumped or distributed. The suggested techniques involve transmission lines and isolation resistors. These principles are discussed for several practical designs, including broadband lumped-element power dividers. The experimental components that were fabricated based on these principles were well described by the computed results.<>
{"title":"Broadbanding techniques for TEM N-way power dividers","authors":"A. Shor","doi":"10.1109/MWSYM.1988.22118","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22118","url":null,"abstract":"Broadband TEM power dividers have traditionally involved multisection or taper designs. The author briefly reviews compensation techniques that can be used to achieve broadband designs with one or two sections. The compensating elements can be either lumped or distributed. The suggested techniques involve transmission lines and isolation resistors. These principles are discussed for several practical designs, including broadband lumped-element power dividers. The experimental components that were fabricated based on these principles were well described by the computed results.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128976770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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