Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22215
T. S. Tan, R. Jungerman, S. Elliott
A dual Nd:YAG ring laser heterodyne system for the calibration of optical receivers is presented. This heterodyne system offers more than 50 dB of dynamic range. Calibration of optical phase and amplitude modulators is achieved by downconverting a sideband of the modulated optical carrier to a fixed intermediate frequency with another laser. This technique eliminates the need for a high-speed receiver. This dual YAG system is capable of generating beat frequencies from DC to more than 100 GHz.<>
{"title":"Calibration of optical receivers and modulators using an optical heterodyne technique","authors":"T. S. Tan, R. Jungerman, S. Elliott","doi":"10.1109/MWSYM.1988.22215","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22215","url":null,"abstract":"A dual Nd:YAG ring laser heterodyne system for the calibration of optical receivers is presented. This heterodyne system offers more than 50 dB of dynamic range. Calibration of optical phase and amplitude modulators is achieved by downconverting a sideband of the modulated optical carrier to a fixed intermediate frequency with another laser. This technique eliminates the need for a high-speed receiver. This dual YAG system is capable of generating beat frequencies from DC to more than 100 GHz.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131189916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22127
J.L. Merenda, D. Neuf, P. Piro
Second-harmonic mixing from 4-40-GHz with a 2-20-GHz local oscillator (LO) has been obtained using an eight-diode antiparallel bridge in a balanced microstrip circuit. The development and testing of this mixer, which includes a lumped-element diplexer, was expedited by a 10*scale model at 4 GHz. The mixer operates with less than 12-dB conversion loss and +12-dBm input third-order intermodulation point, at a LO power of +14 dBm.<>
{"title":"4 to 40 GHz even harmonic Schottky mixer","authors":"J.L. Merenda, D. Neuf, P. Piro","doi":"10.1109/MWSYM.1988.22127","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22127","url":null,"abstract":"Second-harmonic mixing from 4-40-GHz with a 2-20-GHz local oscillator (LO) has been obtained using an eight-diode antiparallel bridge in a balanced microstrip circuit. The development and testing of this mixer, which includes a lumped-element diplexer, was expedited by a 10*scale model at 4 GHz. The mixer operates with less than 12-dB conversion loss and +12-dBm input third-order intermodulation point, at a LO power of +14 dBm.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131216474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22039
J. Purviance, D. Criss, D. Monteith
The first- and second-order statistics for the model parameters of a 0.5- mu m GaAs FET are determined and then tested in a statistical circuit design and yield simulation. The purpose is to identify what statistical FET data is needed to statistically design a high-yield monolithic microwave integrated circuit (MMIC) amplifier. An example is used to identify which aspects of statistical circuit design are sensitive to the proper FET model statistics. It is shown that the design values are insensitive and the yield estimates are sensitive. The important issues in statistical circuit design are summarized and a discussion of the needed future works is given.<>
确定了0.5 μ m GaAs场效应管模型参数的一阶和二阶统计量，并在统计电路设计和良率仿真中进行了测试。目的是确定统计场效应管数据需要统计设计一个高产量的单片微波集成电路(MMIC)放大器。用一个例子来确定统计电路设计的哪些方面对适当的场效应管模型统计敏感。结果表明，设计值是不敏感的，而产量估计是敏感的。总结了统计电路设计中的重要问题，并对今后需要进行的工作进行了讨论。
{"title":"FET model statistics and their effects on design centering and yield prediction for microwave amplifiers","authors":"J. Purviance, D. Criss, D. Monteith","doi":"10.1109/MWSYM.1988.22039","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22039","url":null,"abstract":"The first- and second-order statistics for the model parameters of a 0.5- mu m GaAs FET are determined and then tested in a statistical circuit design and yield simulation. The purpose is to identify what statistical FET data is needed to statistically design a high-yield monolithic microwave integrated circuit (MMIC) amplifier. An example is used to identify which aspects of statistical circuit design are sensitive to the proper FET model statistics. It is shown that the design values are insensitive and the yield estimates are sensitive. The important issues in statistical circuit design are summarized and a discussion of the needed future works is given.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132508104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22139
J. Bellantoni, G. C. Dalman, R. Compton
A network analyzer for making accurate measurements in the 75-110-GHz band is presented. The analyzer operates by sampling forward and reverse signals using back-to-back directional couplers. The tapped signals are combined in a hybrid coupler which feeds the sum and difference into two detector diodes. An additional two measurements are obtained by switching a phase delay into one of the paths. These four measurements are manipulated using six-port theory to calculate the complex reflection coefficient. A 27-40-GHz prototype operating as a reflectometer is demonstrated. Calibrations and measurements are performed interactively with the aid of a Macintosh II personal computer equipped with a high-resolution color display.<>
{"title":"A millimeter-wave vector network analyzer","authors":"J. Bellantoni, G. C. Dalman, R. Compton","doi":"10.1109/MWSYM.1988.22139","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22139","url":null,"abstract":"A network analyzer for making accurate measurements in the 75-110-GHz band is presented. The analyzer operates by sampling forward and reverse signals using back-to-back directional couplers. The tapped signals are combined in a hybrid coupler which feeds the sum and difference into two detector diodes. An additional two measurements are obtained by switching a phase delay into one of the paths. These four measurements are manipulated using six-port theory to calculate the complex reflection coefficient. A 27-40-GHz prototype operating as a reflectometer is demonstrated. Calibrations and measurements are performed interactively with the aid of a Macintosh II personal computer equipped with a high-resolution color display.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132046920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22203
M.A. Smith
A GaAs monolithic three-transistor signal circulator for 0.2- to 2-GHz applications was developed and tested. The circuit consists of three FETs with gates of 150- mu m width and 0.5- mu m length, three capacitors, and seven GaAs resistors. The resulting chip size is 1.1 mm*1.0 mm on a substrate of thickness 0.15 mm. The ability afforded by monolithic construction techniques to locate the active devices in close proximity to each other and avoid interconnecting circuitry stray capacitance is critical to the high-frequency operation of the device. The three-terminal device demonstrated a 6-dB insertion loss and an 18-dB directivity over the above frequency range.<>
{"title":"GaAs monolithic implementation of active circulators","authors":"M.A. Smith","doi":"10.1109/MWSYM.1988.22203","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22203","url":null,"abstract":"A GaAs monolithic three-transistor signal circulator for 0.2- to 2-GHz applications was developed and tested. The circuit consists of three FETs with gates of 150- mu m width and 0.5- mu m length, three capacitors, and seven GaAs resistors. The resulting chip size is 1.1 mm*1.0 mm on a substrate of thickness 0.15 mm. The ability afforded by monolithic construction techniques to locate the active devices in close proximity to each other and avoid interconnecting circuitry stray capacitance is critical to the high-frequency operation of the device. The three-terminal device demonstrated a 6-dB insertion loss and an 18-dB directivity over the above frequency range.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"337 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133156042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22055
M. Ross, R. Harrison
An analytical/graphical procedure is presented that provides a close approximation to the optimum design of a distributed monolithic GaAs amplifier, given specific gain and 1-dB bandwidth requirements. The technique gives the optimum number of stages, the FET dimensions, and the values of the lumped inductors used to realize the artificial transmission lines.<>
{"title":"Optimization of distributed monolithic GaAs amplifiers using an analytical/graphical technique","authors":"M. Ross, R. Harrison","doi":"10.1109/MWSYM.1988.22055","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22055","url":null,"abstract":"An analytical/graphical procedure is presented that provides a close approximation to the optimum design of a distributed monolithic GaAs amplifier, given specific gain and 1-dB bandwidth requirements. The technique gives the optimum number of stages, the FET dimensions, and the values of the lumped inductors used to realize the artificial transmission lines.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"313 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131613852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22174
M. Kaneta, K. Yashiro, S. Ohkawa
A magnetostatic forward volume wave (MSFVW) directional coupler with a slotline structure is discussed. The structure consists of a slotted metallic layer deposited on a YIG film. The propagation of MSFVWs along the structure has been confirmed experimentally except around the lower limit of the MSFVW band. In addition, a description is given of a directional coupler with adjacent guiding slots fabricated on an epitaxial yttrium iron garnet (YIG) grown on a gadolinium gallium garnet (GGG) substate. A nearly 100% power transfer from one slotline to the other has been demonstrated. The directivity was measured to be above 20 dB except around the lower frequency limit.<>
{"title":"A magnetostatic forward volume wave directional coupler with a guiding slot structure","authors":"M. Kaneta, K. Yashiro, S. Ohkawa","doi":"10.1109/MWSYM.1988.22174","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22174","url":null,"abstract":"A magnetostatic forward volume wave (MSFVW) directional coupler with a slotline structure is discussed. The structure consists of a slotted metallic layer deposited on a YIG film. The propagation of MSFVWs along the structure has been confirmed experimentally except around the lower limit of the MSFVW band. In addition, a description is given of a directional coupler with adjacent guiding slots fabricated on an epitaxial yttrium iron garnet (YIG) grown on a gadolinium gallium garnet (GGG) substate. A nearly 100% power transfer from one slotline to the other has been demonstrated. The directivity was measured to be above 20 dB except around the lower frequency limit.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"57 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114015838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22147
J. L. Cáceres, J. Perez
A compact downconverter for use in TV receive-only (TVRO) receivers is presented. The circuit consists of an image-rejection filter and a self-oscillating mixer performing as a block which converts RF into IF signals. The downconverter's features are fully comparable to those of conventional structures, with the additional advantage that only one MESFET is required, leading to a more compact and reliable design. Average results on a band of 800 MHz (10.95-11.75 GHz with a local oscillator frequency of 10 GHz) gives a conversion gain of 4.5 dB, 8-dB single-sideband (SSB) noise figure, and more than 40-dB image rejection.<>
{"title":"A single MESFET down-converter for TVRO application","authors":"J. L. Cáceres, J. Perez","doi":"10.1109/MWSYM.1988.22147","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22147","url":null,"abstract":"A compact downconverter for use in TV receive-only (TVRO) receivers is presented. The circuit consists of an image-rejection filter and a self-oscillating mixer performing as a block which converts RF into IF signals. The downconverter's features are fully comparable to those of conventional structures, with the additional advantage that only one MESFET is required, leading to a more compact and reliable design. Average results on a band of 800 MHz (10.95-11.75 GHz with a local oscillator frequency of 10 GHz) gives a conversion gain of 4.5 dB, 8-dB single-sideband (SSB) noise figure, and more than 40-dB image rejection.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123962375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22036
R. Majidi-Ahy, K. Weingarten, M. Riaziat, D. Bloom, B. Auld
The application of an electrooptic sampling technique for the characterization of propagating modes of uniplanar guiding structures on GaAs is described. The characteristics of slotline and even and odd modes of coplanar waveguides (CPW) on semi-insulating GaAs substrate are investigated. The potential distribution over the cross section of each was measured. The guide wavelength for each guide was directly obtained from standing-wave measurements by electrooptic sampling, and the dispersion characteristics of CPW modes and slotline were measured from 15 to 40 GHz.<>
{"title":"Electrooptic sampling measurement of dispersion characteristics of slot line and coplanar waveguide (coupled slot line) even and odd modes","authors":"R. Majidi-Ahy, K. Weingarten, M. Riaziat, D. Bloom, B. Auld","doi":"10.1109/MWSYM.1988.22036","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22036","url":null,"abstract":"The application of an electrooptic sampling technique for the characterization of propagating modes of uniplanar guiding structures on GaAs is described. The characteristics of slotline and even and odd modes of coplanar waveguides (CPW) on semi-insulating GaAs substrate are investigated. The potential distribution over the cross section of each was measured. The guide wavelength for each guide was directly obtained from standing-wave measurements by electrooptic sampling, and the dispersion characteristics of CPW modes and slotline were measured from 15 to 40 GHz.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124083930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22099
A.E. Geissberger, R. Sadler, H. Singh, G. Lewis, I. Bahl, M. Balzan
Fabrication details, radio-frequency (RF) yield results, and RF performance vs. temperature results are presented for an emitter-coupled-logic (ECL)-compatible L-band, limiting dual-modulus (/10/11) prescaler. This process for monolithic integration of analog and digital circuit functions uses refractory-self-aligned-gate FET technology. When tested with -22 dBm input signal power, one lot of six wafers had a total RF chip yield of 19%, with a best-wafer yield of 43%. The average operating frequency was 1.45 GHz (standard deviation (SD)=51 MHz) with an average power dissipation of 696 mW (SD=23 mW).<>
{"title":"A monolithic L-band limiting amplifier and dual-modulus prescaler GaAs integrated circuit","authors":"A.E. Geissberger, R. Sadler, H. Singh, G. Lewis, I. Bahl, M. Balzan","doi":"10.1109/MWSYM.1988.22099","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22099","url":null,"abstract":"Fabrication details, radio-frequency (RF) yield results, and RF performance vs. temperature results are presented for an emitter-coupled-logic (ECL)-compatible L-band, limiting dual-modulus (/10/11) prescaler. This process for monolithic integration of analog and digital circuit functions uses refractory-self-aligned-gate FET technology. When tested with -22 dBm input signal power, one lot of six wafers had a total RF chip yield of 19%, with a best-wafer yield of 43%. The average operating frequency was 1.45 GHz (standard deviation (SD)=51 MHz) with an average power dissipation of 696 mW (SD=23 mW).<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121133710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：