Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22206
R. Robertson, R.T. Kihm, E. Holzman, J. Poelker, R. Bowen
The design, configuration, and performance of a W-band transceiver with a volume of 1 in/sup 3/ is discussed. The transceiver uses a noncoherent chirped waveform for a pulse compression radar application. The authors also discuss a design technique for the local oscillator (LO) of the radar, and the successful demonstration of a Gunn diode LO validating this design procedure. The technique of preheat bias control was demonstrated as a method to compensate the chirp response of IMPATT diode transmitters for ambient temperature variations.<>
{"title":"A noncoherent W-band transceiver","authors":"R. Robertson, R.T. Kihm, E. Holzman, J. Poelker, R. Bowen","doi":"10.1109/MWSYM.1988.22206","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22206","url":null,"abstract":"The design, configuration, and performance of a W-band transceiver with a volume of 1 in/sup 3/ is discussed. The transceiver uses a noncoherent chirped waveform for a pulse compression radar application. The authors also discuss a design technique for the local oscillator (LO) of the radar, and the successful demonstration of a Gunn diode LO validating this design procedure. The technique of preheat bias control was demonstrated as a method to compensate the chirp response of IMPATT diode transmitters for ambient temperature variations.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126587711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22218
D. Bourreau, P. Guillon
A design is proposed for nonsymmetric electrodes for a broadband electrooptic modulator with low drive voltage. Traveling-wave electrodes, laterally shifted to reverse the direction of the applied electric field, are used to obtain constant phase variation. The finite-element method is used to compute the electrodes' characteristics taking into account both electrodes and buffers thickness. Numerical results are given for LiNbO/sub 3/:Ti substrate material at 1.52- mu m wavelength.<>
{"title":"Characteristics of coplanar waveguides with metal coating on multilayer substrate: application to broadband LiNbO/sub 3/:Ti traveling wave light modulators/switch","authors":"D. Bourreau, P. Guillon","doi":"10.1109/MWSYM.1988.22218","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22218","url":null,"abstract":"A design is proposed for nonsymmetric electrodes for a broadband electrooptic modulator with low drive voltage. Traveling-wave electrodes, laterally shifted to reverse the direction of the applied electric field, are used to obtain constant phase variation. The finite-element method is used to compute the electrodes' characteristics taking into account both electrodes and buffers thickness. Numerical results are given for LiNbO/sub 3/:Ti substrate material at 1.52- mu m wavelength.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121950048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22101
T. Tanaka, K. Tsunoda, M. Aikawa
A slot-coupled directional coupler between two microstrip lines that couples through a rectangular slot in the common ground plane has been proposed and fabricated for the 1.5-GHz band. The design method and the experimental results for this directional coupler are described, as well as its application to a planar multiport directional coupler (MDC). The measured 3-dB coupling results agreed well with the calculated results, as do the experimental results for a four-port MDC. A planar MDC configuration consisting of a combination of slot-coupled directional couplers has also been proposed.<>
{"title":"New slot-coupled directional couplers between double-sided substrate microstrip lines, and their applications","authors":"T. Tanaka, K. Tsunoda, M. Aikawa","doi":"10.1109/MWSYM.1988.22101","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22101","url":null,"abstract":"A slot-coupled directional coupler between two microstrip lines that couples through a rectangular slot in the common ground plane has been proposed and fabricated for the 1.5-GHz band. The design method and the experimental results for this directional coupler are described, as well as its application to a planar multiport directional coupler (MDC). The measured 3-dB coupling results agreed well with the calculated results, as do the experimental results for a four-port MDC. A planar MDC configuration consisting of a combination of slot-coupled directional couplers has also been proposed.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"2005 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125808704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22123
N. Hayama, S. R. Lesage, M. Madihian, K. Honjo
Design considerations, fabrication and performance results are described for a low-phase-noise Ku-band oscillator implemented using a fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). The transistor has a measured collector-current 1/f noise power density of 10/sup -19/A/sup 2//Hz at f=400 Hz for a collector current of 1.2 mA. The free-running oscillator developed represents an output power of 6 dBm at 15.5 GHz, with a single-sideband (SSB) FM noise of -65 dBc/Hz at 10 kHz off-carrier. The noise level is 24 dB lower than that for a GaAs FET oscillator, and 2 dB lower than that for a silicon voltage-controlled oscillator.<>
{"title":"A low-noise Ku-band AlGaAs/GaAs HBT oscillator","authors":"N. Hayama, S. R. Lesage, M. Madihian, K. Honjo","doi":"10.1109/MWSYM.1988.22123","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22123","url":null,"abstract":"Design considerations, fabrication and performance results are described for a low-phase-noise Ku-band oscillator implemented using a fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). The transistor has a measured collector-current 1/f noise power density of 10/sup -19/A/sup 2//Hz at f=400 Hz for a collector current of 1.2 mA. The free-running oscillator developed represents an output power of 6 dBm at 15.5 GHz, with a single-sideband (SSB) FM noise of -65 dBc/Hz at 10 kHz off-carrier. The noise level is 24 dB lower than that for a GaAs FET oscillator, and 2 dB lower than that for a silicon voltage-controlled oscillator.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122953140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22228
M. Eron, D. Rhodes
A description is given of the use of parametric, frequency-dependent models for more accurate and realistic active and passive computer-aided design (CAD) model development. Two examples are presented to demonstrate the power of this method for the design of analog circuits. The first example concerns a spiral inductor model. The second example involves a voltage-controlled wideband attenuator.<>
{"title":"The use of parametric modeling in microwave circuit design","authors":"M. Eron, D. Rhodes","doi":"10.1109/MWSYM.1988.22228","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22228","url":null,"abstract":"A description is given of the use of parametric, frequency-dependent models for more accurate and realistic active and passive computer-aided design (CAD) model development. Two examples are presented to demonstrate the power of this method for the design of analog circuits. The first example concerns a spiral inductor model. The second example involves a voltage-controlled wideband attenuator.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129278236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22203
M.A. Smith
A GaAs monolithic three-transistor signal circulator for 0.2- to 2-GHz applications was developed and tested. The circuit consists of three FETs with gates of 150- mu m width and 0.5- mu m length, three capacitors, and seven GaAs resistors. The resulting chip size is 1.1 mm*1.0 mm on a substrate of thickness 0.15 mm. The ability afforded by monolithic construction techniques to locate the active devices in close proximity to each other and avoid interconnecting circuitry stray capacitance is critical to the high-frequency operation of the device. The three-terminal device demonstrated a 6-dB insertion loss and an 18-dB directivity over the above frequency range.<>
{"title":"GaAs monolithic implementation of active circulators","authors":"M.A. Smith","doi":"10.1109/MWSYM.1988.22203","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22203","url":null,"abstract":"A GaAs monolithic three-transistor signal circulator for 0.2- to 2-GHz applications was developed and tested. The circuit consists of three FETs with gates of 150- mu m width and 0.5- mu m length, three capacitors, and seven GaAs resistors. The resulting chip size is 1.1 mm*1.0 mm on a substrate of thickness 0.15 mm. The ability afforded by monolithic construction techniques to locate the active devices in close proximity to each other and avoid interconnecting circuitry stray capacitance is critical to the high-frequency operation of the device. The three-terminal device demonstrated a 6-dB insertion loss and an 18-dB directivity over the above frequency range.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"337 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133156042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22174
M. Kaneta, K. Yashiro, S. Ohkawa
A magnetostatic forward volume wave (MSFVW) directional coupler with a slotline structure is discussed. The structure consists of a slotted metallic layer deposited on a YIG film. The propagation of MSFVWs along the structure has been confirmed experimentally except around the lower limit of the MSFVW band. In addition, a description is given of a directional coupler with adjacent guiding slots fabricated on an epitaxial yttrium iron garnet (YIG) grown on a gadolinium gallium garnet (GGG) substate. A nearly 100% power transfer from one slotline to the other has been demonstrated. The directivity was measured to be above 20 dB except around the lower frequency limit.<>
{"title":"A magnetostatic forward volume wave directional coupler with a guiding slot structure","authors":"M. Kaneta, K. Yashiro, S. Ohkawa","doi":"10.1109/MWSYM.1988.22174","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22174","url":null,"abstract":"A magnetostatic forward volume wave (MSFVW) directional coupler with a slotline structure is discussed. The structure consists of a slotted metallic layer deposited on a YIG film. The propagation of MSFVWs along the structure has been confirmed experimentally except around the lower limit of the MSFVW band. In addition, a description is given of a directional coupler with adjacent guiding slots fabricated on an epitaxial yttrium iron garnet (YIG) grown on a gadolinium gallium garnet (GGG) substate. A nearly 100% power transfer from one slotline to the other has been demonstrated. The directivity was measured to be above 20 dB except around the lower frequency limit.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"57 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114015838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22147
J. L. Cáceres, J. Perez
A compact downconverter for use in TV receive-only (TVRO) receivers is presented. The circuit consists of an image-rejection filter and a self-oscillating mixer performing as a block which converts RF into IF signals. The downconverter's features are fully comparable to those of conventional structures, with the additional advantage that only one MESFET is required, leading to a more compact and reliable design. Average results on a band of 800 MHz (10.95-11.75 GHz with a local oscillator frequency of 10 GHz) gives a conversion gain of 4.5 dB, 8-dB single-sideband (SSB) noise figure, and more than 40-dB image rejection.<>
{"title":"A single MESFET down-converter for TVRO application","authors":"J. L. Cáceres, J. Perez","doi":"10.1109/MWSYM.1988.22147","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22147","url":null,"abstract":"A compact downconverter for use in TV receive-only (TVRO) receivers is presented. The circuit consists of an image-rejection filter and a self-oscillating mixer performing as a block which converts RF into IF signals. The downconverter's features are fully comparable to those of conventional structures, with the additional advantage that only one MESFET is required, leading to a more compact and reliable design. Average results on a band of 800 MHz (10.95-11.75 GHz with a local oscillator frequency of 10 GHz) gives a conversion gain of 4.5 dB, 8-dB single-sideband (SSB) noise figure, and more than 40-dB image rejection.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123962375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22036
R. Majidi-Ahy, K. Weingarten, M. Riaziat, D. Bloom, B. Auld
The application of an electrooptic sampling technique for the characterization of propagating modes of uniplanar guiding structures on GaAs is described. The characteristics of slotline and even and odd modes of coplanar waveguides (CPW) on semi-insulating GaAs substrate are investigated. The potential distribution over the cross section of each was measured. The guide wavelength for each guide was directly obtained from standing-wave measurements by electrooptic sampling, and the dispersion characteristics of CPW modes and slotline were measured from 15 to 40 GHz.<>
{"title":"Electrooptic sampling measurement of dispersion characteristics of slot line and coplanar waveguide (coupled slot line) even and odd modes","authors":"R. Majidi-Ahy, K. Weingarten, M. Riaziat, D. Bloom, B. Auld","doi":"10.1109/MWSYM.1988.22036","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22036","url":null,"abstract":"The application of an electrooptic sampling technique for the characterization of propagating modes of uniplanar guiding structures on GaAs is described. The characteristics of slotline and even and odd modes of coplanar waveguides (CPW) on semi-insulating GaAs substrate are investigated. The potential distribution over the cross section of each was measured. The guide wavelength for each guide was directly obtained from standing-wave measurements by electrooptic sampling, and the dispersion characteristics of CPW modes and slotline were measured from 15 to 40 GHz.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124083930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-25DOI: 10.1109/MWSYM.1988.22099
A.E. Geissberger, R. Sadler, H. Singh, G. Lewis, I. Bahl, M. Balzan
Fabrication details, radio-frequency (RF) yield results, and RF performance vs. temperature results are presented for an emitter-coupled-logic (ECL)-compatible L-band, limiting dual-modulus (/10/11) prescaler. This process for monolithic integration of analog and digital circuit functions uses refractory-self-aligned-gate FET technology. When tested with -22 dBm input signal power, one lot of six wafers had a total RF chip yield of 19%, with a best-wafer yield of 43%. The average operating frequency was 1.45 GHz (standard deviation (SD)=51 MHz) with an average power dissipation of 696 mW (SD=23 mW).<>
{"title":"A monolithic L-band limiting amplifier and dual-modulus prescaler GaAs integrated circuit","authors":"A.E. Geissberger, R. Sadler, H. Singh, G. Lewis, I. Bahl, M. Balzan","doi":"10.1109/MWSYM.1988.22099","DOIUrl":"https://doi.org/10.1109/MWSYM.1988.22099","url":null,"abstract":"Fabrication details, radio-frequency (RF) yield results, and RF performance vs. temperature results are presented for an emitter-coupled-logic (ECL)-compatible L-band, limiting dual-modulus (/10/11) prescaler. This process for monolithic integration of analog and digital circuit functions uses refractory-self-aligned-gate FET technology. When tested with -22 dBm input signal power, one lot of six wafers had a total RF chip yield of 19%, with a best-wafer yield of 43%. The average operating frequency was 1.45 GHz (standard deviation (SD)=51 MHz) with an average power dissipation of 696 mW (SD=23 mW).<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121133710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：