The use of localized surface plasmon resonance effect to induce hot electron injection and enhance the photoelectric conversion efficiency of two-dimensional transition metal carbon/nitride (MXene) based photodetectors can break through the traditional bandgap limitation. MXene is an ideal hot carrier material due to its metal like properties, controllable surface chemistry, and wide spectral response. The material synthesis has evolved from hydrofluoric acid (HF) etching to green strategies such as Joule heating and Lewis acid molten salt etching, achieving precise control of surface functional groups and defect density. Interface engineering can adjust the work function to 4.55–5.25 eV through LiF, PEIE, and proton acid treatment, effectively reducing the Schottky barrier of MXene/semiconductor heterojunction, resulting in a rectification ratio of up to 16136 and a UV responsivity of 81.3 A·W⁻¹ . At the same time, the balance mechanism of surface termination groups on charge transfer efficiency, dark current suppression, and stability is elucidated. By combining femtosecond pump probe spectroscopy with first principles simulations, the thermal electron dynamics mechanism was revealed, revealing the 50 fs ultrafast electron transfer and interface electron nucleus coupling energy transfer path. Despite facing challenges such as theoretical experimental bias, interface defect control, environmental stability, and scaling costs, this review provides theoretical guidance and experimental strategies for the new generation of ultrafast photodetectors and energy conversion systems by integrating material synthesis, interface regulation, and ultrafast dynamics research results.
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