Both n (Bi-Te) and p-type (Bi-Sb-Te) thermoelectric films were prepared on SiO2/Si substrates by co-sputtering method and effects of post-annealing on their characteristic properties were investigated. Films with four different compositions were elaborated by adjusting the powers for each target. Thermal treatment of the films was performed using rapid thermal annealing. The post-deposition annealing was found to be very effective in improving the thermoelectric properties of both type films. Increase in thermopower was clearly observed for the films close to the stoichiometric composition. Recrystallization of chalcogenide phase has caused the enhancement of thermoelectric properties, along with the decrease of the carrier concentration
{"title":"Effect of rapid thermal annealing on thermoelectric thin films prepared by sputtering","authors":"Dong-Ho Kim, Gun-hwan Lee, Heon Choi, O. Kim","doi":"10.1109/ICT.2006.331313","DOIUrl":"https://doi.org/10.1109/ICT.2006.331313","url":null,"abstract":"Both n (Bi-Te) and p-type (Bi-Sb-Te) thermoelectric films were prepared on SiO2/Si substrates by co-sputtering method and effects of post-annealing on their characteristic properties were investigated. Films with four different compositions were elaborated by adjusting the powers for each target. Thermal treatment of the films was performed using rapid thermal annealing. The post-deposition annealing was found to be very effective in improving the thermoelectric properties of both type films. Increase in thermopower was clearly observed for the films close to the stoichiometric composition. Recrystallization of chalcogenide phase has caused the enhancement of thermoelectric properties, along with the decrease of the carrier concentration","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122322638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
NixCo4-xSb12 (x = 0.02~0.1) was fabricated by ultra high-pressure method. Composition, thermoelectric properties and the microstructure were investigated. The results indicate that NixCo4-xSb12 (x = 0.02~0.1) fabricated by ultra high pressure sintering has good thermoelectric properties. Low temperature heat treatment leads to a decrease of the electric conductivity and Seebeck coefficient. High temperature heat treatment leads to an increase of both the electric conductivity and Seebeck coefficient of the samples
{"title":"Thermoelectric Properties of NixCo4-xSb12 Fabricated by Ultra High Pressure Method","authors":"Guiying Xu, Guochao Ma, Xiaofeng Wu, Sitong Niu","doi":"10.1109/ICT.2006.331225","DOIUrl":"https://doi.org/10.1109/ICT.2006.331225","url":null,"abstract":"Ni<sub>x</sub>Co<sub>4-x</sub>Sb<sub>12</sub> (x = 0.02~0.1) was fabricated by ultra high-pressure method. Composition, thermoelectric properties and the microstructure were investigated. The results indicate that Ni<sub>x</sub>Co<sub>4-x</sub>Sb<sub>12</sub> (x = 0.02~0.1) fabricated by ultra high pressure sintering has good thermoelectric properties. Low temperature heat treatment leads to a decrease of the electric conductivity and Seebeck coefficient. High temperature heat treatment leads to an increase of both the electric conductivity and Seebeck coefficient of the samples","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116441355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The temperature of road pavement rises up to 70degC in summer due to the effect of the solar radiation. The authors have developed a pavement-cooling system using thermoelectric generator. Heat in the pavement is collected as heated water in a heat collection tube installed in the pavement. River water near the road is used as a coolant. Electric power is produced by temperature difference between the hot and cool water at the thermoelectric generator. With the conversion from heat to electricity and heat flux from hot to cold water, the temperature of the surface of the pavement is reduced
{"title":"Thermoelectric Generators using Solar Thermal Energy in Heated Road Pavement","authors":"M. Hasebe, Y. Kamikawa, S. Meiarashi","doi":"10.1109/ICT.2006.331237","DOIUrl":"https://doi.org/10.1109/ICT.2006.331237","url":null,"abstract":"The temperature of road pavement rises up to 70degC in summer due to the effect of the solar radiation. The authors have developed a pavement-cooling system using thermoelectric generator. Heat in the pavement is collected as heated water in a heat collection tube installed in the pavement. River water near the road is used as a coolant. Electric power is produced by temperature difference between the hot and cool water at the thermoelectric generator. With the conversion from heat to electricity and heat flux from hot to cold water, the temperature of the surface of the pavement is reduced","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130724389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
(Sr,Yb)yCo4Sb12 double filled skutterudites are synthesized by a melting method and sintered by Spark Plasma Sintering (SPS) technique. Small amount of Yb2O3 and YbSb2 as impurity phases are found with high ytterbium content in the X-ray diffraction patterns of sintered materials. The thermal conductivity, electrical conductivity and Seebeck coefficient are measured from room temperature to 850 K. The influence of different filling fractions of ytterbium on the thermoelectric properties of (Sr,Yb)yCo4Sb12 is studied. The lattice thermal conductivity of double filled skutterudites is reduced dramatically as compared to that of Sr single-filled skutterudites with similar filling fractions. An enhancement in power factor and dimensionless thermoelectric figure of merit (ZT) is observed in the double filled skutterudites
{"title":"Synthesis and Thermoelectric Properties of (Sr,Yb)yCo4Sb12 Double Filled Skutterudites","authors":"S. Bai, X.Y. Zhao, Y. Pei, L.D. Chen, W.Q. Zhang","doi":"10.1109/ICT.2006.331301","DOIUrl":"https://doi.org/10.1109/ICT.2006.331301","url":null,"abstract":"(Sr,Yb)<sub>y</sub>Co<sub>4</sub>Sb<sub>12</sub> double filled skutterudites are synthesized by a melting method and sintered by Spark Plasma Sintering (SPS) technique. Small amount of Yb<sub>2</sub>O<sub>3 </sub> and YbSb<sub>2</sub> as impurity phases are found with high ytterbium content in the X-ray diffraction patterns of sintered materials. The thermal conductivity, electrical conductivity and Seebeck coefficient are measured from room temperature to 850 K. The influence of different filling fractions of ytterbium on the thermoelectric properties of (Sr,Yb)<sub>y</sub>Co<sub>4</sub>Sb<sub>12</sub> is studied. The lattice thermal conductivity of double filled skutterudites is reduced dramatically as compared to that of Sr single-filled skutterudites with similar filling fractions. An enhancement in power factor and dimensionless thermoelectric figure of merit (ZT) is observed in the double filled skutterudites","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130803518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have studied (Ti,Zr)CoSb half-Heusler compounds substituted by tin for antimony in order to develop p-type compounds. The electrical resistivity and thermoelectric power were measured from 323 to 1000 K. The thermal diffusivity was measured by a laser flash technique from room temperature to 1000 K. From the above-mentioned data, we calculated the dimensionless figure of merit ZT. By increasing the tin content of TiCoSnxSb1-x and ZrCoSnxSb1-x, the electrical resistivity decreased and the sign of the thermoelectric power changed from negative (n-type) to positive (p-type). The thermal conductivity was reduced by an alloy scattering effect between antimony and tin. Relatively high ZT values were obtained; ZT = 0.30 at 959 K for TiCoSn0.1Sb0.9 and ZT= 0.45 at 958 K for ZrCoSn0.1Sb0.9
{"title":"Thermoelectric properties of (Ti,Zr) CoSnxSb1-x half-Heusler compounds","authors":"T. Sekimoto, K. Kurosaki, H. Muta, S. Yamanaka","doi":"10.1109/ICT.2006.331297","DOIUrl":"https://doi.org/10.1109/ICT.2006.331297","url":null,"abstract":"We have studied (Ti,Zr)CoSb half-Heusler compounds substituted by tin for antimony in order to develop p-type compounds. The electrical resistivity and thermoelectric power were measured from 323 to 1000 K. The thermal diffusivity was measured by a laser flash technique from room temperature to 1000 K. From the above-mentioned data, we calculated the dimensionless figure of merit ZT. By increasing the tin content of TiCoSnxSb1-x and ZrCoSnxSb1-x, the electrical resistivity decreased and the sign of the thermoelectric power changed from negative (n-type) to positive (p-type). The thermal conductivity was reduced by an alloy scattering effect between antimony and tin. Relatively high ZT values were obtained; ZT = 0.30 at 959 K for TiCoSn0.1Sb0.9 and ZT= 0.45 at 958 K for ZrCoSn0.1Sb0.9","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133988606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Anno, H. Fukushima, K. Koga, K. Okita, K. Matsubara
We have investigated the electronic and thermoelectric properties of polycrystalline guest-substituted clathrate compounds with the formula Ba8-xAxAu6Ge40 (A = Sr, Eu; nominal x = 0-4). The compounds show p-type conduction and degenerated semiconductor behavior. The Seebeck coefficient and the electrical conductivity are not largely affected by guest substitution and exhibit carrier concentration dependence that is similar to that for p-type Ba8AuxGe46-x. The carrier effective mass is relatively large, and also depends on the carrier concentration, as is the case for p-type Ba8AuxGe 46-x. The valence band x-ray photoelectron spectroscopy study and band structure calculation show that the guest Eu 4f states with localized nature are located below about 1.5 eV from the valence band top, suggesting that the influence of Eu substitution on the p-type transport properties may be small. The lattice thermal conductivity kappaL decreases greatly with increasing guest composition up to x = 2, and the reduction of kappaL for Eu substitution is larger than that for Sr substitution. As a result, thermoelectric figure of merit ZT is improved as compared to that for p-type Ba8AuxGe46-x
{"title":"Effect of Guest Substitution on Thermoelectric Properties of Clathrate Compounds","authors":"H. Anno, H. Fukushima, K. Koga, K. Okita, K. Matsubara","doi":"10.1109/ICT.2006.331264","DOIUrl":"https://doi.org/10.1109/ICT.2006.331264","url":null,"abstract":"We have investigated the electronic and thermoelectric properties of polycrystalline guest-substituted clathrate compounds with the formula Ba<sub>8-x</sub>A<sub>x</sub>Au<sub>6</sub>Ge<sub>40</sub> (A = Sr, Eu; nominal x = 0-4). The compounds show p-type conduction and degenerated semiconductor behavior. The Seebeck coefficient and the electrical conductivity are not largely affected by guest substitution and exhibit carrier concentration dependence that is similar to that for p-type Ba<sub>8</sub>Au<sub>x</sub>Ge<sub>46-x</sub>. The carrier effective mass is relatively large, and also depends on the carrier concentration, as is the case for p-type Ba<sub>8</sub>Au<sub>x</sub>Ge <sub>46-x</sub>. The valence band x-ray photoelectron spectroscopy study and band structure calculation show that the guest Eu 4f states with localized nature are located below about 1.5 eV from the valence band top, suggesting that the influence of Eu substitution on the p-type transport properties may be small. The lattice thermal conductivity kappa<sub>L</sub> decreases greatly with increasing guest composition up to x = 2, and the reduction of kappa<sub>L</sub> for Eu substitution is larger than that for Sr substitution. As a result, thermoelectric figure of merit ZT is improved as compared to that for p-type Ba<sub>8</sub>Au<sub>x</sub>Ge<sub>46-x</sub>","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134224310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Oide, Y. Miyazaki, Y. Ono, X. Huang, T. Kajitani
Systematic ion substitution has been performed on the Co site in the rock-salt (RS)-type [Ca2CoO3] subsystem of misfit-layered cobalt oxide [Ca2(Co1-xAx)O3-delta] 0.62CoO2 (A = Nb, Ru, Ta, Pb, W, La and Zr). The oxygen deficiency delta and the decomposition temperature Td of the substituted samples have been determined by means of the thermogravimetric analysis (TGA). Upon heating, the oxygen atoms are gradually released from the RS-type subsystem up to delta~0.10. A small amount (x = 0.10) of the substitution remarkably increases Td from 1173 K (x = 0) up to 1246 K (A = Nb). The Pb-substituted samples show substantial decrease in electrical resistivity p from 19.2 mOmegacm to 13.8 mOmegacm (x = 0.10) at 950 K. The highest thermoelectric power, S2p-1 = 2.1times10-4 WK-2 m-1 , is realized for the Pb-substituted sample with x = 0.10 at 950 K
在错配层状氧化钴[Ca2(Co1-xAx)O3-delta] 0.62CoO2 (A = Nb, Ru, Ta, Pb, W, La和Zr)的岩盐(RS)型[Ca2CoO3]子系统中，对Co位进行了系统离子取代。用热重分析(TGA)测定了取代样品的缺氧δ和分解温度Td。加热后，氧原子逐渐从rs型子系统中释放出来，释放量达δ ~0.10。少量(x = 0.10)的取代显著地使Td从1173 K (x = 0)增加到1246 K (A = Nb)。在950 K时，pb取代样品的电阻率p从19.2 mOmegacm大幅下降到13.8 mOmegacm (x = 0.10)。在950 K时，当x = 0.10时，pb取代样品的热电功率最高，S2p-1 = 2.1times10-4 WK-2 m-1
{"title":"Thermogravimetric Study and High-Temperature Thermoelectric Properties of [Ca2(Co1-xAx)O3]0.62CoO2","authors":"Y. Oide, Y. Miyazaki, Y. Ono, X. Huang, T. Kajitani","doi":"10.1109/ICT.2006.331282","DOIUrl":"https://doi.org/10.1109/ICT.2006.331282","url":null,"abstract":"Systematic ion substitution has been performed on the Co site in the rock-salt (RS)-type [Ca<sub>2</sub>CoO<sub>3</sub>] subsystem of misfit-layered cobalt oxide [Ca<sub>2</sub>(Co<sub>1-x</sub>A<sub>x</sub>)O<sub>3-delta</sub>] <sub>0.62</sub>CoO<sub>2</sub> (A = Nb, Ru, Ta, Pb, W, La and Zr). The oxygen deficiency delta and the decomposition temperature T<sub>d</sub> of the substituted samples have been determined by means of the thermogravimetric analysis (TGA). Upon heating, the oxygen atoms are gradually released from the RS-type subsystem up to delta~0.10. A small amount (x = 0.10) of the substitution remarkably increases T<sub>d </sub> from 1173 K (x = 0) up to 1246 K (A = Nb). The Pb-substituted samples show substantial decrease in electrical resistivity p from 19.2 mOmegacm to 13.8 mOmegacm (x = 0.10) at 950 K. The highest thermoelectric power, S<sup>2</sup>p<sup>-1</sup> = 2.1times10<sup>-4 </sup> WK<sup>-2</sup> m<sup>-1</sup> , is realized for the Pb-substituted sample with x = 0.10 at 950 K","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116824702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
(Bi88Sb12)100-xMx (M = Pb, Sn; x = 0.005 to 3) alloys were prepared by direct melting, quenching, and annealing. The X-ray diffraction patterns showed that peaks of Bi-Sb alloy were predominant in all samples. Pb or Sn was distributed almost uniformly in Bi88Sb12, while some segregation was confirmed at grain boundaries when heavily Pb or Sn was involved. Thermoelectric properties were investigated by measuring the Hall coefficient, electrical resistivity, and Seebeck coefficient between 20 K and 300 K. Hall and Seebeck coefficients of Pb or Sn doped samples were positive at low temperatures, indicating that the doping element acted as an acceptor. Temperatures resulting in positive Hall and Seebeck coefficients further increased with increasing doping amount and according to annealing process. As a result, the large p-type power factor was obtained with a Pb content of x = 0.005 at low temperatures, and with a Sn content of x = 3 at higher temperatures. These results suggested that preparation of excellent p-type Bi-Sb alloys was possible using heavily Pb- or Sn-doping, quenching, and annealing for homogeneity
{"title":"Effects of Pb- or Sn-doping on Low Temperature Thermoelectric Properties of Bi88Sb12","authors":"H. Kitagawa, H. Noguchi, K. Hasezaki","doi":"10.1109/ICT.2006.331382","DOIUrl":"https://doi.org/10.1109/ICT.2006.331382","url":null,"abstract":"(Bi88Sb12)100-xMx (M = Pb, Sn; x = 0.005 to 3) alloys were prepared by direct melting, quenching, and annealing. The X-ray diffraction patterns showed that peaks of Bi-Sb alloy were predominant in all samples. Pb or Sn was distributed almost uniformly in Bi88Sb12, while some segregation was confirmed at grain boundaries when heavily Pb or Sn was involved. Thermoelectric properties were investigated by measuring the Hall coefficient, electrical resistivity, and Seebeck coefficient between 20 K and 300 K. Hall and Seebeck coefficients of Pb or Sn doped samples were positive at low temperatures, indicating that the doping element acted as an acceptor. Temperatures resulting in positive Hall and Seebeck coefficients further increased with increasing doping amount and according to annealing process. As a result, the large p-type power factor was obtained with a Pb content of x = 0.005 at low temperatures, and with a Sn content of x = 3 at higher temperatures. These results suggested that preparation of excellent p-type Bi-Sb alloys was possible using heavily Pb- or Sn-doping, quenching, and annealing for homogeneity","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133579298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Patiño-Lopez, S. Grauby, Y. Ezzahri, W. Claeys, S. Dilhaire
An AC harmonic analysis of thermoelectric phenomena is presented in this work. It deals with the modification of the suspended sample configuration used in the Harman method, by using pure sine wave electrical excitation. Heat transfer in the sample and its interfaces are described using the thermal quadrupoles method. The fundamental harmonic response in the sample voltage is analytically calculated. The model sensitivity coefficients show that all the properties concerned in the figure of merit i.e. the Seebeck coefficient, the thermal conductivity and the electric resistivity can be simultaneously estimated. This is a novel skill in thermoelectrics properties characterization. Main aspects for an optimal experimental design in an inverse problem point of view are given. The advantages of the harmonic regime upon the classical DC regime are studied in detail
{"title":"Harmonic Regime Analysis and Inverse Method Applied to The Simultaneous Determination of Thermoelectric Properties","authors":"L. Patiño-Lopez, S. Grauby, Y. Ezzahri, W. Claeys, S. Dilhaire","doi":"10.1109/ICT.2006.331214","DOIUrl":"https://doi.org/10.1109/ICT.2006.331214","url":null,"abstract":"An AC harmonic analysis of thermoelectric phenomena is presented in this work. It deals with the modification of the suspended sample configuration used in the Harman method, by using pure sine wave electrical excitation. Heat transfer in the sample and its interfaces are described using the thermal quadrupoles method. The fundamental harmonic response in the sample voltage is analytically calculated. The model sensitivity coefficients show that all the properties concerned in the figure of merit i.e. the Seebeck coefficient, the thermal conductivity and the electric resistivity can be simultaneously estimated. This is a novel skill in thermoelectrics properties characterization. Main aspects for an optimal experimental design in an inverse problem point of view are given. The advantages of the harmonic regime upon the classical DC regime are studied in detail","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132784349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have tried to enhance the thermoelectric figure of merit of polycrystalline AgTlTe by alloying Pd. In the present study, we prepared polycrystalline samples of Pd-0 at.%, Pd-5 at.%, Pd-10 at.% alloyed AgTlTe and measured the thermoelectric properties. Polycrystalline samples were prepared from appropriate amounts of Ag2Te, Tl 2Te and PdTe1.3. The electrical resistivity (rho), Seebeck coefficient (S), and thermal conductivity (kappa) were evaluated from room temperature to slightly below the melting temperature, and the effect of Pd alloying on the properties of AgTlTe was studied. Pd-5 at.% and Pd-10 at.% alloyed AgTlTe were made of two phases, AgTlTe containing small amount of Pd and PdTe2. Pd alloying improved the power factor but increased the thermal conductivity, leading to a slightly increasing of the thermoelectric figure of merit
{"title":"Thermoelectric properties of Pd alloyed AgTlTe","authors":"K. Goto, K. Kurosaki, H. Muta, S. Yamanaka","doi":"10.1109/ICT.2006.331357","DOIUrl":"https://doi.org/10.1109/ICT.2006.331357","url":null,"abstract":"We have tried to enhance the thermoelectric figure of merit of polycrystalline AgTlTe by alloying Pd. In the present study, we prepared polycrystalline samples of Pd-0 at.%, Pd-5 at.%, Pd-10 at.% alloyed AgTlTe and measured the thermoelectric properties. Polycrystalline samples were prepared from appropriate amounts of Ag2Te, Tl 2Te and PdTe1.3. The electrical resistivity (rho), Seebeck coefficient (S), and thermal conductivity (kappa) were evaluated from room temperature to slightly below the melting temperature, and the effect of Pd alloying on the properties of AgTlTe was studied. Pd-5 at.% and Pd-10 at.% alloyed AgTlTe were made of two phases, AgTlTe containing small amount of Pd and PdTe2. Pd alloying improved the power factor but increased the thermal conductivity, leading to a slightly increasing of the thermoelectric figure of merit","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"211 S663","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132904714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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