Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742749
S. Roy, S. Kaya, S. Babiker, A. Asenov, J. Barker
Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applications, in a material system compatible with silicon VLSI. However, the optimisation of practical RF devices requires some care. 0.1-0.12 /spl mu/m gate length designs are investigated using Monte Carlo techniques. Although structures based on III-V experience show f/sub T/ values of up to 94 GHz, more realistic designs are shown to be limited by parallel conduction and ill constrained effective channel lengths. Aggressively scaled SiGe devices, following state-of-the-art CMOS technologies, show f/sub T/ values of up to 80 GHz.
{"title":"Monte Carlo investigation of optimal device architectures for SiGe FETs","authors":"S. Roy, S. Kaya, S. Babiker, A. Asenov, J. Barker","doi":"10.1109/IWCE.1998.742749","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742749","url":null,"abstract":"Strained silicon channel FETs grown on virtual SiGe substrates show clear potential for RF applications, in a material system compatible with silicon VLSI. However, the optimisation of practical RF devices requires some care. 0.1-0.12 /spl mu/m gate length designs are investigated using Monte Carlo techniques. Although structures based on III-V experience show f/sub T/ values of up to 94 GHz, more realistic designs are shown to be limited by parallel conduction and ill constrained effective channel lengths. Aggressively scaled SiGe devices, following state-of-the-art CMOS technologies, show f/sub T/ values of up to 80 GHz.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124214205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742727
M. Ershov
The main source of noise in quantum well infrared photodetectors (QWIPs) is the generation-recombination (g-r) processes related to carrier capture to QWs and emission from QWs into continuum. This work presents the first self-consistent numerical simulation of g-r noise in QWIPs.
{"title":"Numerical simulation of noise in quantum well infrared photodetectors","authors":"M. Ershov","doi":"10.1109/IWCE.1998.742727","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742727","url":null,"abstract":"The main source of noise in quantum well infrared photodetectors (QWIPs) is the generation-recombination (g-r) processes related to carrier capture to QWs and emission from QWs into continuum. This work presents the first self-consistent numerical simulation of g-r noise in QWIPs.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122288546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742702
N. Holmberg, R. Akis, D. Ferry
The authors consider an approach to the magneto-transport fluctuations in ballistic quantum dots, based upon the energy spectra of the dots. The results obtained from these calculations allows us to probe issues regarding the scaling of the dominant frequency of the fluctuations. From our numerical analysis we attempt to resolve this issue by simulating dots of many different sizes using a quantum mechanical approach.
{"title":"The effect of size scaling on the magneto-transport fluctuations in ballistic quantum dots","authors":"N. Holmberg, R. Akis, D. Ferry","doi":"10.1109/IWCE.1998.742702","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742702","url":null,"abstract":"The authors consider an approach to the magneto-transport fluctuations in ballistic quantum dots, based upon the energy spectra of the dots. The results obtained from these calculations allows us to probe issues regarding the scaling of the dominant frequency of the fluctuations. From our numerical analysis we attempt to resolve this issue by simulating dots of many different sizes using a quantum mechanical approach.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130633377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742726
M. Ryzhii, V. Ryzhii, I. Khmyrova, M. Willander
The ultra-high-frequency response of interdigitated metal-semiconductor-metal photodiodes with a GaAs absorbing layer is studied using an ensemble Monte Carlo particle method.
用系综蒙特卡罗粒子法研究了具有砷化镓吸收层的金属-半导体-金属交叉光电二极管的超高频响应。
{"title":"Terahertz response of MSM photodiodes: Monte Carlo simulation","authors":"M. Ryzhii, V. Ryzhii, I. Khmyrova, M. Willander","doi":"10.1109/IWCE.1998.742726","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742726","url":null,"abstract":"The ultra-high-frequency response of interdigitated metal-semiconductor-metal photodiodes with a GaAs absorbing layer is studied using an ensemble Monte Carlo particle method.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126285535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742695
M. Morifuji, A. Sakamoto, C. Hamaguchi
In a superlattice, it is known that localized electronic states are formed due to an electric field applied along the growth axis. Therefore, an electron changes its nature from a wave to a particle. Such a change of electronic nature imposes on us to apply different frameworks of transport theory depending on the strength of electric field. In this paper, we show that such a complemental nature of electrons can be described in a unified way by considering electronic acceleration during a scattering event. Based on the unified picture and by means of the Monte Carlo simulation, we calculate drift velocities of electrons in a superlattice. Crossover between band-transport in low fields and hopping-transport in high fields is studied and discussed.
{"title":"Complemental theory for vertical transport in semiconductor superlattices","authors":"M. Morifuji, A. Sakamoto, C. Hamaguchi","doi":"10.1109/IWCE.1998.742695","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742695","url":null,"abstract":"In a superlattice, it is known that localized electronic states are formed due to an electric field applied along the growth axis. Therefore, an electron changes its nature from a wave to a particle. Such a change of electronic nature imposes on us to apply different frameworks of transport theory depending on the strength of electric field. In this paper, we show that such a complemental nature of electrons can be described in a unified way by considering electronic acceleration during a scattering event. Based on the unified picture and by means of the Monte Carlo simulation, we calculate drift velocities of electrons in a superlattice. Crossover between band-transport in low fields and hopping-transport in high fields is studied and discussed.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116709561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742710
T. Korner, P. Regli, W. Fichtner, R. Gull, A. Erlebach, L. Bomholt
A complete opto-electronic simulation of a CCD cell structure is presented. We combined the finite-difference time-domain method for rigorous simulation of light propagation with electronic device simulation methods based on drift/diffusion charge carrier transport models.
{"title":"Combined opto-electronic simulation of CCD cell structures by means of finite-difference time-domain method","authors":"T. Korner, P. Regli, W. Fichtner, R. Gull, A. Erlebach, L. Bomholt","doi":"10.1109/IWCE.1998.742710","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742710","url":null,"abstract":"A complete opto-electronic simulation of a CCD cell structure is presented. We combined the finite-difference time-domain method for rigorous simulation of light propagation with electronic device simulation methods based on drift/diffusion charge carrier transport models.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127317446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742729
M. Eto
The many-body states in an artificial atom and its transport properties have been examined by numerical studies. The magnetic field dependence of both the ground state and low-lying excited states, obtained by the exact diagonalisation method, is in good agreement with experimental results. We have proposed two possible mechanisms for the anomalous T dependence of conductance peak heights. With increasing magnetic field, the correlation effect becomes stronger, which suppresses the conductance considerably.
{"title":"Numerical studies of transport properties through artificial atoms under magnetic fields","authors":"M. Eto","doi":"10.1109/IWCE.1998.742729","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742729","url":null,"abstract":"The many-body states in an artificial atom and its transport properties have been examined by numerical studies. The magnetic field dependence of both the ground state and low-lying excited states, obtained by the exact diagonalisation method, is in good agreement with experimental results. We have proposed two possible mechanisms for the anomalous T dependence of conductance peak heights. With increasing magnetic field, the correlation effect becomes stronger, which suppresses the conductance considerably.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115511173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742720
U. Ravaioli
The purpose of this brief review is to survey the hierarchy of physical approaches for semiconductor transport and device simulation, giving an indication of the limits of applicability and approximations underlying the various approaches. The main focus is on the relevance of the approaches for the simulation of hot carrier effects in deeply scaled devices.
{"title":"Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices","authors":"U. Ravaioli","doi":"10.1109/IWCE.1998.742720","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742720","url":null,"abstract":"The purpose of this brief review is to survey the hierarchy of physical approaches for semiconductor transport and device simulation, giving an indication of the limits of applicability and approximations underlying the various approaches. The main focus is on the relevance of the approaches for the simulation of hot carrier effects in deeply scaled devices.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123062468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742718
J. Jakumeit, T. Sontowski, Umberto Ravaioli
The authors have formulated the mutation operator Monte Carlo method (MOMC) and tested this approach both in the context of evolutionary algorithm optimization and as a stand done transport simulator. They investigate the features of this transport operator in detail, showing that the MOMC is a local Monte Carlo technique which combines features and advantages of the Monte Carlo approach with the stability of iterative algorithms.
{"title":"Iterative local Monte Carlo technique for the simulation of Si-MOSFETs","authors":"J. Jakumeit, T. Sontowski, Umberto Ravaioli","doi":"10.1109/IWCE.1998.742718","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742718","url":null,"abstract":"The authors have formulated the mutation operator Monte Carlo method (MOMC) and tested this approach both in the context of evolutionary algorithm optimization and as a stand done transport simulator. They investigate the features of this transport operator in detail, showing that the MOMC is a local Monte Carlo technique which combines features and advantages of the Monte Carlo approach with the stability of iterative algorithms.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131542006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742752
Zhiping Yu, R. Dutton, R. Kiehl
Quantum mechanical (QM) effects, which manifest when the device dimensions are comparable to the de Broglie wavelength, are becoming common physical phenomena in the current micro-/nano-meter technology era. While most novel devices take advantage of QM effects to achieve fast switching speed, miniature size, and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. Solutions to minimize the adverse effects caused by QM while keeping the down scaling trend (technology feasibility aside) are being sought in the research community and industry-wide. This talk tries to present a perspective view of modeling approaches to quantum mechanical effects in solid-state devices at the device and circuit simulation levels. Specifically, the macroscopic modeling of silicon devices to include QM corrections in the classical transport framework is discussed. Both device and circuit models are provided. On the quantum devices, such as the single electron junctions and transistors, the emphasis is placed on the principle of logic circuit operation.
{"title":"Circuit/device modeling at the quantum level","authors":"Zhiping Yu, R. Dutton, R. Kiehl","doi":"10.1109/IWCE.1998.742752","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742752","url":null,"abstract":"Quantum mechanical (QM) effects, which manifest when the device dimensions are comparable to the de Broglie wavelength, are becoming common physical phenomena in the current micro-/nano-meter technology era. While most novel devices take advantage of QM effects to achieve fast switching speed, miniature size, and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. Solutions to minimize the adverse effects caused by QM while keeping the down scaling trend (technology feasibility aside) are being sought in the research community and industry-wide. This talk tries to present a perspective view of modeling approaches to quantum mechanical effects in solid-state devices at the device and circuit simulation levels. Specifically, the macroscopic modeling of silicon devices to include QM corrections in the classical transport framework is discussed. Both device and circuit models are provided. On the quantum devices, such as the single electron junctions and transistors, the emphasis is placed on the principle of logic circuit operation.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115701926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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