Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742754
E. Wang, M. Stettler, S. Yu, C. Maziar
The cumulant expansion method is proposed to solve the Boltzmann transport equation (BTE) in semiconductors. This method involves deriving a set of partial differential equations for the expansion coefficients from a Fourier transformation of the BTE. The collision terms for phonon emission and absorption scattering are obtained directly from quantum computed scattering transition rates, without invoking the relaxation time approximation. Unlike the moment expansion method used in hydrodynamic models, the cumulant expansion converges much faster when the distribution function is close to a drifted maxwellian because, for this case, only the first three cumulants are non-zero. This method also provides a way to construct an arbitrary distribution function from the computed cumulants, without being limited to a shifted maxwellian.
{"title":"Application of cumulant expansion to the modeling of non-local effects in semiconductor devices","authors":"E. Wang, M. Stettler, S. Yu, C. Maziar","doi":"10.1109/IWCE.1998.742754","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742754","url":null,"abstract":"The cumulant expansion method is proposed to solve the Boltzmann transport equation (BTE) in semiconductors. This method involves deriving a set of partial differential equations for the expansion coefficients from a Fourier transformation of the BTE. The collision terms for phonon emission and absorption scattering are obtained directly from quantum computed scattering transition rates, without invoking the relaxation time approximation. Unlike the moment expansion method used in hydrodynamic models, the cumulant expansion converges much faster when the distribution function is close to a drifted maxwellian because, for this case, only the first three cumulants are non-zero. This method also provides a way to construct an arbitrary distribution function from the computed cumulants, without being limited to a shifted maxwellian.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130245367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742705
T. Kerkhoven, W. Chow, F. Bodine
A novel three-dimensional computational procedure is presented for the determination of the self-consistent electronic structure in the electrostatic field due to the nuclei. The model includes an eigenvalue problem for Schrodinger's equation coupled with Poisson's equation for the electrostatic potential.
{"title":"3D pseudospectral self-consistent field approximation","authors":"T. Kerkhoven, W. Chow, F. Bodine","doi":"10.1109/IWCE.1998.742705","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742705","url":null,"abstract":"A novel three-dimensional computational procedure is presented for the determination of the self-consistent electronic structure in the electrostatic field due to the nuclei. The model includes an eigenvalue problem for Schrodinger's equation coupled with Poisson's equation for the electrostatic potential.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121779835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742715
Massimo V. Fischetti
The purpose of this paper is to sketch a 'formal' derivation of the transport equation, emphasizing the crucial approximations required, and to extend the method to more realistic band structures. The example of electron transport in an nin diode is presented.
{"title":"A master equation approach to the simulation of electron transport in small semiconductor devices","authors":"Massimo V. Fischetti","doi":"10.1109/IWCE.1998.742715","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742715","url":null,"abstract":"The purpose of this paper is to sketch a 'formal' derivation of the transport equation, emphasizing the crucial approximations required, and to extend the method to more realistic band structures. The example of electron transport in an nin diode is presented.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"51 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133114469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742746
N. Sano, M. Fischetti, S. Laux
The significance of the energy splitting in the split-off valence band for calculations of the hole-initiated impact ionization rate has been investigated. To attain this objective, we have computed the ab-initio ionization transition rates in Ge, Si, GaAs, InAs and In/sub 0.53/Ga/sub 0.47/As by employing nonlocal and local pseudopotentials with and without spin-orbit interaction, respectively.
{"title":"Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs","authors":"N. Sano, M. Fischetti, S. Laux","doi":"10.1109/IWCE.1998.742746","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742746","url":null,"abstract":"The significance of the energy splitting in the split-off valence band for calculations of the hole-initiated impact ionization rate has been investigated. To attain this objective, we have computed the ab-initio ionization transition rates in Ge, Si, GaAs, InAs and In/sub 0.53/Ga/sub 0.47/As by employing nonlocal and local pseudopotentials with and without spin-orbit interaction, respectively.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133482336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742747
H. Jung, H. Nakano, K. Taniguchi
We have investigated anisotropic properties for impact ionisation of GaAs using Monte Carlo simulation and a realistic energy band structure. The realistic energy band structure is derived from the empirical pseudopotential method and impact ionisation scattering rates are calculated by Fermi's golden rule. For observing anisotropic properties of impact ionisation coefficients, a Monte Carlo simulation has been performed after electric fields are applied along different directions.
{"title":"Transient analysis of impact ionization anisotropy using realistic band structure for GaAs","authors":"H. Jung, H. Nakano, K. Taniguchi","doi":"10.1109/IWCE.1998.742747","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742747","url":null,"abstract":"We have investigated anisotropic properties for impact ionisation of GaAs using Monte Carlo simulation and a realistic energy band structure. The realistic energy band structure is derived from the empirical pseudopotential method and impact ionisation scattering rates are calculated by Fermi's golden rule. For observing anisotropic properties of impact ionisation coefficients, a Monte Carlo simulation has been performed after electric fields are applied along different directions.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122230402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742763
S. Kumashiro, I. Yokota
In this paper, Schrodinger equations for both electrons and holes both in the gate poly-Si and silicon substrate were solved to reproduce the full C-V characteristics of the poly-Si gate MOS structure.
本文求解了栅极多晶硅和硅衬底中电子和空穴的薛定谔方程，再现了多晶硅栅极MOS结构的全C-V特性。
{"title":"Inverse modeling of poly-silicon in MOSFETs using quantum mechanical models","authors":"S. Kumashiro, I. Yokota","doi":"10.1109/IWCE.1998.742763","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742763","url":null,"abstract":"In this paper, Schrodinger equations for both electrons and holes both in the gate poly-Si and silicon substrate were solved to reproduce the full C-V characteristics of the poly-Si gate MOS structure.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121021220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742756
F. M. Bufler, B. Meinerzhagen
Drift velocities, carrier temperatures and energy relaxation times are computed by full-band Monte Carlo simulation along the <110> field direction at 300 K for holes in unstrained and [001]-strained Si grown on a Si/sub 0.7/Ge/sub 0.3/ substrate. The drift velocity as a function of the electric field is significantly enhanced under biaxial tensile strain, but is smaller than in the unstrained case when plotted versus the hole temperature because the holes are more easily heated under strain. The ohmic in-plane drift mobility and the transient velocity overshoot peak for a sudden application of a field of 100 kV/cm are enhanced by a factor of approximately three and two, respectively.
{"title":"Hydrodynamic transport parameters for holes in strained silicon","authors":"F. M. Bufler, B. Meinerzhagen","doi":"10.1109/IWCE.1998.742756","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742756","url":null,"abstract":"Drift velocities, carrier temperatures and energy relaxation times are computed by full-band Monte Carlo simulation along the <110> field direction at 300 K for holes in unstrained and [001]-strained Si grown on a Si/sub 0.7/Ge/sub 0.3/ substrate. The drift velocity as a function of the electric field is significantly enhanced under biaxial tensile strain, but is smaller than in the unstrained case when plotted versus the hole temperature because the holes are more easily heated under strain. The ohmic in-plane drift mobility and the transient velocity overshoot peak for a sudden application of a field of 100 kV/cm are enhanced by a factor of approximately three and two, respectively.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126946633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742709
W. Lui
Due to scattering in fibers, the polarization of an optical signal after propagating through a fiber network is randomized. To ensure that the signal is properly detected, one approach is to equip at the receiving end of a fiber converter to correct the polarization before the signal is processed. It is therefore vital for us to model polarization properties of optical waves accurately so that converters can be designed to improve the link between fibers and optoelectronic integrated circuits (OEIC). In this presentation, the author reviews the recent activities towards this endeavour.
{"title":"Modeling vector properties of electromagnetic fields in semiconductor optical waveguides","authors":"W. Lui","doi":"10.1109/IWCE.1998.742709","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742709","url":null,"abstract":"Due to scattering in fibers, the polarization of an optical signal after propagating through a fiber network is randomized. To ensure that the signal is properly detected, one approach is to equip at the receiving end of a fiber converter to correct the polarization before the signal is processed. It is therefore vital for us to model polarization properties of optical waves accurately so that converters can be designed to improve the link between fibers and optoelectronic integrated circuits (OEIC). In this presentation, the author reviews the recent activities towards this endeavour.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130244623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742745
H. Uchida, H. Asai, Y. Ieki, M. Ichimura, C. Shao, E. Arai
Phosphorus diffusion profiles in bulk and SOI substrates were measured by SIMS, spreading resistance and four point probe methods and the accuracy of the measured profiles was discussed. Using the measured phosphorus diffusion profiles, the main diffusion parameters involved in the phosphorus-point defect pair diffusion model were determined.
{"title":"Effect of oxidation ambient on phosphorus diffusion in SOI","authors":"H. Uchida, H. Asai, Y. Ieki, M. Ichimura, C. Shao, E. Arai","doi":"10.1109/IWCE.1998.742745","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742745","url":null,"abstract":"Phosphorus diffusion profiles in bulk and SOI substrates were measured by SIMS, spreading resistance and four point probe methods and the accuracy of the measured profiles was discussed. Using the measured phosphorus diffusion profiles, the main diffusion parameters involved in the phosphorus-point defect pair diffusion model were determined.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122568385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-10-19DOI: 10.1109/IWCE.1998.742724
K. Yokoyama, N. Sekino
We have developed a numerical optimization program that uses a region dependent grating structure and/or multi-phase shift DFB LDs with uniform longitudinal intensity distributions. The effectiveness of the program was confirmed by calculating longitudinal optical intensity distributions, and its effectiveness has been demonstrated for restricted tuning variables conditions. Since the restriction arising from our fabrication conditions is included in the optimization procedure, the obtained tuning parameters take into account the actual fabrication. It is concluded that an overall grating coupling coefficient design for high performance DFB LDs can be automatically achieved by using the current program.
{"title":"Numerical optimization of DFB LD grating structure for uniform longitudinal intensity distribution","authors":"K. Yokoyama, N. Sekino","doi":"10.1109/IWCE.1998.742724","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742724","url":null,"abstract":"We have developed a numerical optimization program that uses a region dependent grating structure and/or multi-phase shift DFB LDs with uniform longitudinal intensity distributions. The effectiveness of the program was confirmed by calculating longitudinal optical intensity distributions, and its effectiveness has been demonstrated for restricted tuning variables conditions. Since the restriction arising from our fabrication conditions is included in the optimization procedure, the obtained tuning parameters take into account the actual fabrication. It is concluded that an overall grating coupling coefficient design for high performance DFB LDs can be automatically achieved by using the current program.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132250956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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