Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742704
M. Dur, A. Gunther, D. Vasileska, S. Goodnick
Acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a [100] surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO/sub 2/ interface is modeled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-phonon interaction strongly affects the scattering rate. The calculated transition rate of electrons from the first excited to the ground state shows a strong dependence on spatial confinement and lattice temperature.
{"title":"Electron relaxation in silicon quantum dots by acoustic phonon scattering","authors":"M. Dur, A. Gunther, D. Vasileska, S. Goodnick","doi":"10.1109/IWCE.1998.742704","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742704","url":null,"abstract":"Acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a [100] surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO/sub 2/ interface is modeled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-phonon interaction strongly affects the scattering rate. The calculated transition rate of electrons from the first excited to the ground state shows a strong dependence on spatial confinement and lattice temperature.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134343068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742737
K. Matsuzawa, K. Uchida, A. Nishiyama
We present the implementation and simulated results of a practical model to cover Schottky and Ohmic contacts. The model considers thermionic emission and spatially distributed tunneling. Simulations using the present model reproduce characteristics of Schottky barrier diodes and show the transition from Schottky to ohmic as the doping level is increased. As an application example, the immunity of a Schottky barrier tunnel transistor to the short channel effect is demonstrated.
{"title":"Simulations of Schottky barrier diodes and tunnel transistors","authors":"K. Matsuzawa, K. Uchida, A. Nishiyama","doi":"10.1109/IWCE.1998.742737","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742737","url":null,"abstract":"We present the implementation and simulated results of a practical model to cover Schottky and Ohmic contacts. The model considers thermionic emission and spatially distributed tunneling. Simulations using the present model reproduce characteristics of Schottky barrier diodes and show the transition from Schottky to ohmic as the doping level is increased. As an application example, the immunity of a Schottky barrier tunnel transistor to the short channel effect is demonstrated.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130097993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742750
T. Tanaka, S. Yamaguchi, K. Sukegawa, H. Goto
We have clarified two dimensional hot carrier (HC) properties of pocket implanted nMOSFETs by full band Monte Carlo device simulation, and we have shown that the HC generation can be suppressed, keeping better V/sub th/ roll-off, without deterioration of driving capability by properly choosing the pocket implant tilt angle. We have also confirmed this by measurements of gate and substrate currents and device lifetime of sub-quarter micron nMOSFETs.
{"title":"Investigation to suppress hot carrier effect in pocket-implanted nMOSFET by full band Monte Carlo simulation","authors":"T. Tanaka, S. Yamaguchi, K. Sukegawa, H. Goto","doi":"10.1109/IWCE.1998.742750","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742750","url":null,"abstract":"We have clarified two dimensional hot carrier (HC) properties of pocket implanted nMOSFETs by full band Monte Carlo device simulation, and we have shown that the HC generation can be suppressed, keeping better V/sub th/ roll-off, without deterioration of driving capability by properly choosing the pocket implant tilt angle. We have also confirmed this by measurements of gate and substrate currents and device lifetime of sub-quarter micron nMOSFETs.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121484728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742717
M. Saraniti, S. Goodnick
The aim of the present work is to demonstrate a new simulation approach, based on the cellular automaton (CA) method, that includes a full-band representation of the electronic structure and of the phonon spectra, while maintaining the short simulation times typical of the previous nonparabolic CA. Simulation results are shown for charge transport in bulk Si to demonstrate the equivalence of this new approach with full-band EMC simulation results, as well as its efficiency.
{"title":"A full-band cellular automaton for charge transport simulation in semiconductors","authors":"M. Saraniti, S. Goodnick","doi":"10.1109/IWCE.1998.742717","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742717","url":null,"abstract":"The aim of the present work is to demonstrate a new simulation approach, based on the cellular automaton (CA) method, that includes a full-band representation of the electronic structure and of the phonon spectra, while maintaining the short simulation times typical of the previous nonparabolic CA. Simulation results are shown for charge transport in bulk Si to demonstrate the equivalence of this new approach with full-band EMC simulation results, as well as its efficiency.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126853768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742700
A. Scholze, A. Schenk, W. Fichtner
The calculation of self-consistent charge densities is not a straightforward task in structures with zero-dimensional confinement. In contrast to the semi-classical case the density of states in a quantum dot depends on the potential. However, this dependence is not explicitly given and Newton-Raphson methods are therefore difficult to employ. In this paper we present a numerical method for the calculation of self-consistent electron densities in a quantum dot weakly coupled to a macroscopic reservoir using a multidimensional secant approach that partially overcomes the numerical limitations intrinsic to single-electron transistor device simulations.
{"title":"Numerical method for the calculation of self-consistent charge densities of reservoir-coupled quantum dots","authors":"A. Scholze, A. Schenk, W. Fichtner","doi":"10.1109/IWCE.1998.742700","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742700","url":null,"abstract":"The calculation of self-consistent charge densities is not a straightforward task in structures with zero-dimensional confinement. In contrast to the semi-classical case the density of states in a quantum dot depends on the potential. However, this dependence is not explicitly given and Newton-Raphson methods are therefore difficult to employ. In this paper we present a numerical method for the calculation of self-consistent electron densities in a quantum dot weakly coupled to a macroscopic reservoir using a multidimensional secant approach that partially overcomes the numerical limitations intrinsic to single-electron transistor device simulations.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124974048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742740
C. Cercignani, I. Gamba, J. Jerome, Chi-Wang Shu
In previous work (1998), the authors introduced a conceptual domain decomposition approach, combining drift-diffusion, kinetic, and high-field regimes. In this paper, we continue the program. We again define a global calibrator, a linear approximation to the Boltzmann transport equation, and solve this in one space and one velocity dimension. Second, we implement a global domain decomposition method, by systematic sampling of separation points between drift-diffusion and high field regimes. The interdomain boundary conditions are implemented through the stencil overlap of the algorithms in both regions.
{"title":"A domain decomposition method: a simulation study","authors":"C. Cercignani, I. Gamba, J. Jerome, Chi-Wang Shu","doi":"10.1109/IWCE.1998.742740","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742740","url":null,"abstract":"In previous work (1998), the authors introduced a conceptual domain decomposition approach, combining drift-diffusion, kinetic, and high-field regimes. In this paper, we continue the program. We again define a global calibrator, a linear approximation to the Boltzmann transport equation, and solve this in one space and one velocity dimension. Second, we implement a global domain decomposition method, by systematic sampling of separation points between drift-diffusion and high field regimes. The interdomain boundary conditions are implemented through the stencil overlap of the algorithms in both regions.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132793532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742751
P. Houlet, Y. Awano, N. Yokoyama, C. Hamaguchi
The authors present an efficient and simple method using a generalized formulation of the Ramo-Shockley theorem for the calculation of the time-dependent terminal currents in multi-port devices within the ensemble Monte Carlo modeling, including the displacement current and the separate contribution of each particle type. Moreover, our technique is optimized for the cloud-in-cell and box integration framework. We emphasize that our formulation does not require any additional optimization theory, is easy to implement and does not increase CPU time consumption.
{"title":"Accurate Monte Carlo modeling of terminal currents in short semiconductor devices by using a generalized Ramo-Shockley theorem","authors":"P. Houlet, Y. Awano, N. Yokoyama, C. Hamaguchi","doi":"10.1109/IWCE.1998.742751","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742751","url":null,"abstract":"The authors present an efficient and simple method using a generalized formulation of the Ramo-Shockley theorem for the calculation of the time-dependent terminal currents in multi-port devices within the ensemble Monte Carlo modeling, including the displacement current and the separate contribution of each particle type. Moreover, our technique is optimized for the cloud-in-cell and box integration framework. We emphasize that our formulation does not require any additional optimization theory, is easy to implement and does not increase CPU time consumption.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131189405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742761
A. Asenov
A 3D 'atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 /spl mu/m MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.
{"title":"Efficient 3D 'atomistic' simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs","authors":"A. Asenov","doi":"10.1109/IWCE.1998.742761","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742761","url":null,"abstract":"A 3D 'atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 /spl mu/m MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116323880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742748
Y. Tagawa, Y. Awano
We performed for the first time full band Monte Carlo simulations of anisotropic hole transport in sub-0.1 /spl mu/m Si devices. We found from this simulation of 0.05 /spl mu/m channel p-i-p diodes that the hole drift velocity in the channel with the orientation of <100> with respect to crystallographic direction is enhanced by the velocity overshoot effect, and that the average velocity in the middle of the channel is 25% higher than for a diode in <110> direction at room temperature. These results suggest that the current drive capability of sub-0.1 /spl mu/m pMOSFETs could be optimized by choosing the channel orientation in the <100> direction.
{"title":"Enhanced hole drift velocity in sub-0.1 /spl mu/m Si devices caused by anisotropic velocity overshoot","authors":"Y. Tagawa, Y. Awano","doi":"10.1109/IWCE.1998.742748","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742748","url":null,"abstract":"We performed for the first time full band Monte Carlo simulations of anisotropic hole transport in sub-0.1 /spl mu/m Si devices. We found from this simulation of 0.05 /spl mu/m channel p-i-p diodes that the hole drift velocity in the channel with the orientation of <100> with respect to crystallographic direction is enhanced by the velocity overshoot effect, and that the average velocity in the middle of the channel is 25% higher than for a diode in <110> direction at room temperature. These results suggest that the current drive capability of sub-0.1 /spl mu/m pMOSFETs could be optimized by choosing the channel orientation in the <100> direction.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128089101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IWCE.1998.742739
S. Wigger, M. Saraniti, S. Goodnick
The Newton multigrid method was shown to be an effective method for solving the nonlinear Poisson equation for semiconductor devices under thermal equilibrium conditions. This technique can also be used to solve problems involving reverse bias junctions. Assuming an insignificant concentration of minority carriers, such that no leakage current is present, and fixing the quasi-Fermi potential as a constant for majority carriers, the nonlinear Poisson equation can be used to simulate such situations.
{"title":"Three dimensional multi-grid Poisson solver","authors":"S. Wigger, M. Saraniti, S. Goodnick","doi":"10.1109/IWCE.1998.742739","DOIUrl":"https://doi.org/10.1109/IWCE.1998.742739","url":null,"abstract":"The Newton multigrid method was shown to be an effective method for solving the nonlinear Poisson equation for semiconductor devices under thermal equilibrium conditions. This technique can also be used to solve problems involving reverse bias junctions. Assuming an insignificant concentration of minority carriers, such that no leakage current is present, and fixing the quasi-Fermi potential as a constant for majority carriers, the nonlinear Poisson equation can be used to simulate such situations.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129982997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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