Pub Date : 2023-03-01DOI: 10.1142/s0129156423300011
Roopali Bhaskar Palwe, D. Khairnar, R. Deshmukh, Shivaji G. Nagargoje
Self-sustenance of India in oil and coal has consistently turned down, so electric vehicles are the future need of the society and environment. The heart of an electric vehicle is a battery; its degradation and safety are prime important issues to avoid accidents. Therefore, setting such a mechanism that improves the performance of a battery is a requirement of the society. The main objective of this article was to compare various aging parameters of a battery used in the electric vehicle, in terms of their effects, monitoring methods, and benefits for battery aging. It also aimed to illustrate the information out of touch that can be used for future research. This helps to maintain the clean environment by reducing pollution and economical benefit to the society.
{"title":"A Review on: Ageing Parameters and Monitoring Methods for Lithium-Ion Batteries Used in Electric Vehicle","authors":"Roopali Bhaskar Palwe, D. Khairnar, R. Deshmukh, Shivaji G. Nagargoje","doi":"10.1142/s0129156423300011","DOIUrl":"https://doi.org/10.1142/s0129156423300011","url":null,"abstract":"Self-sustenance of India in oil and coal has consistently turned down, so electric vehicles are the future need of the society and environment. The heart of an electric vehicle is a battery; its degradation and safety are prime important issues to avoid accidents. Therefore, setting such a mechanism that improves the performance of a battery is a requirement of the society. The main objective of this article was to compare various aging parameters of a battery used in the electric vehicle, in terms of their effects, monitoring methods, and benefits for battery aging. It also aimed to illustrate the information out of touch that can be used for future research. This helps to maintain the clean environment by reducing pollution and economical benefit to the society.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43727444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-01DOI: 10.1142/s0129156421400061
Zahid A. Bhat, J. Sheikh, Raqeebur Rehman, Sharief D. Khan, Ishfaq Bashir, Shazia Ashraf
It is believed that the substrate integrated waveguide (SIW) technology represents the emergent and the most favorable contender for the advancement of the antennas, filters and the other circuit elements operational in the region of microwave as well as the millimeter wave frequencies. SIW layouts offer the advantages of the cost-effective integration of traditional transmission lines and retain the benefits of the classical metallic waveguides, in particular high-quality factors, low losses and the large power handling capability with the self-sufficient electrical shielding. In this paper, a review of the fundamental and operational theory of the SIWs has been discussed and presented. Moreover, the challenges and design considerations in terms of microwave and millimeter filters, the different miniaturization techniques and the most important; its application and implementation for the next-generation 5G communications and beyond has been presented.
{"title":"A Survey on Substrate Integrated Waveguide Filters; Design Challenges and Miniaturizing Techniques for the 5G","authors":"Zahid A. Bhat, J. Sheikh, Raqeebur Rehman, Sharief D. Khan, Ishfaq Bashir, Shazia Ashraf","doi":"10.1142/s0129156421400061","DOIUrl":"https://doi.org/10.1142/s0129156421400061","url":null,"abstract":"It is believed that the substrate integrated waveguide (SIW) technology represents the emergent and the most favorable contender for the advancement of the antennas, filters and the other circuit elements operational in the region of microwave as well as the millimeter wave frequencies. SIW layouts offer the advantages of the cost-effective integration of traditional transmission lines and retain the benefits of the classical metallic waveguides, in particular high-quality factors, low losses and the large power handling capability with the self-sufficient electrical shielding. In this paper, a review of the fundamental and operational theory of the SIWs has been discussed and presented. Moreover, the challenges and design considerations in terms of microwave and millimeter filters, the different miniaturization techniques and the most important; its application and implementation for the next-generation 5G communications and beyond has been presented.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45749485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-01DOI: 10.1142/s0129156423500039
Xiang-Ling Wang, Xiang-Ying Wang
Visualization is primarily utilized as a training method to enhance athletic movement quality, increase concentration power, and minimize competition stress on the player while building firm confidence. Physical literacy (PL) provides a valuable lens for analyzing physical activity (PA) movement in more significant social and affective learning processes. This paper presents an Interactive Visualization positioning in physical education (IVPPE) to deal with the signal fluctuations and positioning techniques in visualizing Deep Neural Network (DNN). To ensure the success of their game, athletes are always looking for new ways to improve their health and performance. Using sensors to keep tabs on training and recovery has become more popular among athletes. Currently, sports teams are using sensors to track both the players’ internal and external workloads. It illustrates the multilayer localizer (MLL) based on transfer learning to improve the positioning accuracy and physical literacy positioning model (PLPM) as a health determinant. A variety of data augmentation techniques are used to combat signal fluctuations. As a result, the combined effects of motivation-promoting physical activity-based visualization improve the accuracy ratio to 96.7%, prediction ratio to 96.2%, efficiency ratio to 96.8%, and reduce the error rate to 18.7%, stress level (52.8%) compared to other conventional models and have a positive impact on the localizer and positioning, making a difference in physical activity (PA) levels.
{"title":"Interactive Visualization of Deep Neural Networks for Feature Positioning and Biomedical Monitoring in Physical Education","authors":"Xiang-Ling Wang, Xiang-Ying Wang","doi":"10.1142/s0129156423500039","DOIUrl":"https://doi.org/10.1142/s0129156423500039","url":null,"abstract":"Visualization is primarily utilized as a training method to enhance athletic movement quality, increase concentration power, and minimize competition stress on the player while building firm confidence. Physical literacy (PL) provides a valuable lens for analyzing physical activity (PA) movement in more significant social and affective learning processes. This paper presents an Interactive Visualization positioning in physical education (IVPPE) to deal with the signal fluctuations and positioning techniques in visualizing Deep Neural Network (DNN). To ensure the success of their game, athletes are always looking for new ways to improve their health and performance. Using sensors to keep tabs on training and recovery has become more popular among athletes. Currently, sports teams are using sensors to track both the players’ internal and external workloads. It illustrates the multilayer localizer (MLL) based on transfer learning to improve the positioning accuracy and physical literacy positioning model (PLPM) as a health determinant. A variety of data augmentation techniques are used to combat signal fluctuations. As a result, the combined effects of motivation-promoting physical activity-based visualization improve the accuracy ratio to 96.7%, prediction ratio to 96.2%, efficiency ratio to 96.8%, and reduce the error rate to 18.7%, stress level (52.8%) compared to other conventional models and have a positive impact on the localizer and positioning, making a difference in physical activity (PA) levels.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45407630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-01DOI: 10.1142/s0129156422990014
{"title":"Author Index: Volume 31 (2022)","authors":"","doi":"10.1142/s0129156422990014","DOIUrl":"https://doi.org/10.1142/s0129156422990014","url":null,"abstract":"","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48008307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper proposes an energy efficient approach for securing inter-connecting IOT devices with servers. A scheme using blockchain and a second network for security management was previously described [1]. To overcome the drawbacks and shortcomings of using traditional smart contract with Ethereum, a new approach is proposed. The proposed approach ensures that the overall IoT network is “hardened” against attack using a framework which is environmentally sustainable and meets the stringent requirements of mission critical applications. This new approach also results in shorter latency, higher throughput and consuming less power, thus suitable for edge computing environment in mobile.
{"title":"Implementing a Data Communication Security Tokens Management System Using COSMOS, an Energy Efficient Proof-of-Stake Blockchain Framework","authors":"Milton Chang, Santanu Das, Dale Montrone, Tapan Chakraborty","doi":"10.1142/s012915642240016x","DOIUrl":"https://doi.org/10.1142/s012915642240016x","url":null,"abstract":"This paper proposes an energy efficient approach for securing inter-connecting IOT devices with servers. A scheme using blockchain and a second network for security management was previously described [1]. To overcome the drawbacks and shortcomings of using traditional smart contract with Ethereum, a new approach is proposed. The proposed approach ensures that the overall IoT network is “hardened” against attack using a framework which is environmentally sustainable and meets the stringent requirements of mission critical applications. This new approach also results in shorter latency, higher throughput and consuming less power, thus suitable for edge computing environment in mobile.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47166559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-01DOI: 10.1142/s0129156422400031
W. Stark, Shuai Chen, Lei Wang
This paper discusses commonly used reverse engineering methods to illegally recreate printed circuit board (PCB) designs. A solution using transformative electronics is presented to prevent the discussed reverse engineering methods by obfuscating the design. The transformative electronics solution is employed in a specific application that results in a reverse engineered board to be incorrectly recreated, where the signals would be distorted due to added electromagnetic interference (EMI). The non-conductive vias that are part of the obfuscation would allow the inclusion of EMI generators that would not affect the circuit in an original design but would prevent copied designs from working correctly. A machine learning algorithm is being designed to optimize the placement of the EMI sources in an original PCB.
{"title":"Reverse Engineering Protection Using Obfuscation Through Electromagnetic Interference","authors":"W. Stark, Shuai Chen, Lei Wang","doi":"10.1142/s0129156422400031","DOIUrl":"https://doi.org/10.1142/s0129156422400031","url":null,"abstract":"This paper discusses commonly used reverse engineering methods to illegally recreate printed circuit board (PCB) designs. A solution using transformative electronics is presented to prevent the discussed reverse engineering methods by obfuscating the design. The transformative electronics solution is employed in a specific application that results in a reverse engineered board to be incorrectly recreated, where the signals would be distorted due to added electromagnetic interference (EMI). The non-conductive vias that are part of the obfuscation would allow the inclusion of EMI generators that would not affect the circuit in an original design but would prevent copied designs from working correctly. A machine learning algorithm is being designed to optimize the placement of the EMI sources in an original PCB.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44591301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-01DOI: 10.1142/s0129156422400171
G. Soto-Valle, Kexin Hu, Madeline E. Holda, Yepu Cui, M. Tentzeris
The recent developments in mmWave and Internet of Things (IoT) technologies have dramatically increased the interest and demand for radio frequency (RF) devices that can be used for applications such as smart cities, energy harvesting, and ubiquitous wireless sensor networks. Additive manufacturing technologies (AMT) plays an important role to support these applications, as they allows to significantly reduce fabrication costs and times while enabling the achievement of devices with more complex geometries and the possibility of using a wide variety of materials. This publication reviews recent developments of state-of-the-art wireless devices including reconfigurable antennas, frequency-selective surfaces and highly scalable phased arrays enabled by AMT capabilities. It also discusses the benefits of AMT in the fabrication of interconnects that are suitable for packaging of fully-integrated antennas.
{"title":"Novel Additive Manufacturing-Enabled RF Devices for 5G/mmWave, IoT, Smart Skins, and Wireless Sensing Applications","authors":"G. Soto-Valle, Kexin Hu, Madeline E. Holda, Yepu Cui, M. Tentzeris","doi":"10.1142/s0129156422400171","DOIUrl":"https://doi.org/10.1142/s0129156422400171","url":null,"abstract":"The recent developments in mmWave and Internet of Things (IoT) technologies have dramatically increased the interest and demand for radio frequency (RF) devices that can be used for applications such as smart cities, energy harvesting, and ubiquitous wireless sensor networks. Additive manufacturing technologies (AMT) plays an important role to support these applications, as they allows to significantly reduce fabrication costs and times while enabling the achievement of devices with more complex geometries and the possibility of using a wide variety of materials. This publication reviews recent developments of state-of-the-art wireless devices including reconfigurable antennas, frequency-selective surfaces and highly scalable phased arrays enabled by AMT capabilities. It also discusses the benefits of AMT in the fabrication of interconnects that are suitable for packaging of fully-integrated antennas.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42884513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-01DOI: 10.1142/s0129156422400183
Y. Zhao, F. Qian, F. Jain, L. Wang
The recent advance of artificial intelligence (AI) has shown remarkable success for numerous tasks, such as cloud computing, deep-learning, neural network and so on. Most of those applications rely on fast computation and large storage, which brings various challenges to the hardware platform. The hardware performance is the bottle neck to break through and therefore, there is a lot of interest in exploring new solutions for computation architecture in recent years. Compute-in-memory (CIM) has drawn attention to the researchers and it is considered as one of the most promising candidates to solve the above challenges. Computing-In-memory is an emerging technique to fulfill the fast-growing demand for high-performance data processing. This technique offers fast processing, low power and high performance by blurring the boundary between processing cores and memory units. One key aspect of CIM is performing matrix-vector multiplication (MVM) or dot product operation through intertwining of processing and memory elements. As the primary computational kernel in neural networks, dot product operation is targeted to be improved in terms of its performance. In this paper, we present the design, implementation and analysis of quantum-dot transistor (QDT) based CIM, from the multi-bit multiplier to the dot product unit, and then the in-memory computing array.
{"title":"A Multi-Bit Non-Volatile Compute-in-Memory Architecture with Quantum-Dot Transistor Based Unit","authors":"Y. Zhao, F. Qian, F. Jain, L. Wang","doi":"10.1142/s0129156422400183","DOIUrl":"https://doi.org/10.1142/s0129156422400183","url":null,"abstract":"The recent advance of artificial intelligence (AI) has shown remarkable success for numerous tasks, such as cloud computing, deep-learning, neural network and so on. Most of those applications rely on fast computation and large storage, which brings various challenges to the hardware platform. The hardware performance is the bottle neck to break through and therefore, there is a lot of interest in exploring new solutions for computation architecture in recent years. Compute-in-memory (CIM) has drawn attention to the researchers and it is considered as one of the most promising candidates to solve the above challenges. Computing-In-memory is an emerging technique to fulfill the fast-growing demand for high-performance data processing. This technique offers fast processing, low power and high performance by blurring the boundary between processing cores and memory units. One key aspect of CIM is performing matrix-vector multiplication (MVM) or dot product operation through intertwining of processing and memory elements. As the primary computational kernel in neural networks, dot product operation is targeted to be improved in terms of its performance. In this paper, we present the design, implementation and analysis of quantum-dot transistor (QDT) based CIM, from the multi-bit multiplier to the dot product unit, and then the in-memory computing array.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44791074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-01DOI: 10.1142/s0129156422400067
Elisa Parent, J. Raphael, T. Kujofsa, J. Ayers
Halide perovskite materials such as FAPbI3 are of great interest for photovoltaic applications and could replace silicon cells if problems of chemical instability, strain and crystal defects are solved. In this paper we present a preliminary modeling study of lattice relaxation in epitaxial FAPbI3 on MAPbClxBr3-x (001).
{"title":"Lattice Relaxation of Epitaxial FAPbI3 on MAPbClxBr3-x (001)","authors":"Elisa Parent, J. Raphael, T. Kujofsa, J. Ayers","doi":"10.1142/s0129156422400067","DOIUrl":"https://doi.org/10.1142/s0129156422400067","url":null,"abstract":"Halide perovskite materials such as FAPbI3 are of great interest for photovoltaic applications and could replace silicon cells if problems of chemical instability, strain and crystal defects are solved. In this paper we present a preliminary modeling study of lattice relaxation in epitaxial FAPbI3 on MAPbClxBr3-x (001).","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49224978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-01DOI: 10.1142/s0129156422400110
R. Mays, B. Khan, R. Gudlavalleti, F. Papadimitrakopoulos, E. Heller, F. Jain
This paper investigates the underlying physics of a SRAM device utilizing three-state Quantum Dot Gate (QDG) FETs by building up the physics from the general QDG-FET, its relation to the QDG-Inverter, and ultimately, the QDG-SRAM. The resulting equations from the exploration of the device physics were utilized to create a simulation within SIMULINK. From the simulation, it was found that in addition to being able to store the “1” and “0” states that are customary for an SRAM device, there is also the ability to store an intermediate state and a pseudo-state as a result of the intermediate state, allowing for the possibility of a 2-bit SRAM device in the same spatial constraints of a conventional SRAM unit cell. Additionally, the experimental results of the QDG-SRAM half-cell and the implications of utilizing a 4 state device to create either a 4 state SRAM cell or a 6 state SRAM cell with two pseudo-states are also discussed.
{"title":"QDG-SRAM Simulation Using Physics-Based Models of QDG-FET and QDG-Inverter","authors":"R. Mays, B. Khan, R. Gudlavalleti, F. Papadimitrakopoulos, E. Heller, F. Jain","doi":"10.1142/s0129156422400110","DOIUrl":"https://doi.org/10.1142/s0129156422400110","url":null,"abstract":"This paper investigates the underlying physics of a SRAM device utilizing three-state Quantum Dot Gate (QDG) FETs by building up the physics from the general QDG-FET, its relation to the QDG-Inverter, and ultimately, the QDG-SRAM. The resulting equations from the exploration of the device physics were utilized to create a simulation within SIMULINK. From the simulation, it was found that in addition to being able to store the “1” and “0” states that are customary for an SRAM device, there is also the ability to store an intermediate state and a pseudo-state as a result of the intermediate state, allowing for the possibility of a 2-bit SRAM device in the same spatial constraints of a conventional SRAM unit cell. Additionally, the experimental results of the QDG-SRAM half-cell and the implications of utilizing a 4 state device to create either a 4 state SRAM cell or a 6 state SRAM cell with two pseudo-states are also discussed.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47094344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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