Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.10
H. Ruda, L. Jȩdral, L. Mannik
Tritium is a radioisotope that emits beta radiation on its decay with a half life exceeding twelve years. The average emitted beta particle energy is ~6 keV. Typically for a semiconductor with bandgap on the order of ~1-2 eV for example, one incident beta particle could result in the production of ~1000 electron-hole pairs in the semiconductor. Beta decay thus represents an interesting generation source for the design of semiconductor-based light sources requiring no external energy supply. In this work we study the luminescence mechanisms resulting from such excitation in materials from the GaInAsP alloy system.
{"title":"Development of a Tritium Powered Semiconductor Laser","authors":"H. Ruda, L. Jȩdral, L. Mannik","doi":"10.1364/slada.1995.tue.10","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.10","url":null,"abstract":"Tritium is a radioisotope that emits beta radiation on its decay with a half life exceeding twelve years. The average emitted beta particle energy is ~6 keV. Typically for a semiconductor with bandgap on the order of ~1-2 eV for example, one incident beta particle could result in the production of ~1000 electron-hole pairs in the semiconductor. Beta decay thus represents an interesting generation source for the design of semiconductor-based light sources requiring no external energy supply. In this work we study the luminescence mechanisms resulting from such excitation in materials from the GaInAsP alloy system.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129520254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.1
E. Avrutin, I. Thayne, D. Barrow, J. Marsh, E. Portnoi, V. Gorfinkel
Frequency up/down conversion of optically transmitted RF signals may be useful for a number of microwave-over-fibre applications. In the earlier works [1-2], we have proposed to perform such conversion by means of operating passively Q-switched (self-pulsing) or passively mode locked semiconductor laser diodes (LDs) as integrated optoelectronic frequency mixers, i.e. as a local oscillator and a mixing element integrated within one device. Theoretical calculation proved the feasibility of RF frequency conversion due to parametric effects in such LDs. The calculations considered the input signal applied to a laser as either an electrical signal (optoelectronic scheme) or an RF modulated optical signal (all-optical scheme), the frequency-converted output being in the form of a modulated stream of optical pulses, convenient for further transmission, with an electrical signal as a by-product. In [3], optoelectronic up-conversion has been performed using self-pulsating lasers with subcarrier modulation in optical communications in view. The results of both [1-2] and [3] experimentally demonstrate the feasibility of frequency mixing in GHz range using self-pulsing lasers, but little study has been performed so far of the mixing efficiency, and the spectral properties of the device have been only studied theoretically [2] for the case of mode locked extended-cavity lasers. Here, we investigate, in more detail, the issue of the efficiency of the optoelectronic frequency conversion in dependency of frequency (in different frequency ranges) and intensity of the modulation signal for monolithic cavity Q-switched and mode locked lasers.
{"title":"Efficiency and Spectral Properties of Integrated Optoelectronic Laser-Diode-Based RF Frequency Mixers","authors":"E. Avrutin, I. Thayne, D. Barrow, J. Marsh, E. Portnoi, V. Gorfinkel","doi":"10.1364/slada.1995.tue.1","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.1","url":null,"abstract":"Frequency up/down conversion of optically transmitted RF signals may be useful for a number of microwave-over-fibre applications. In the earlier works [1-2], we have proposed to perform such conversion by means of operating passively Q-switched (self-pulsing) or passively mode locked semiconductor laser diodes (LDs) as integrated optoelectronic frequency mixers, i.e. as a local oscillator and a mixing element integrated within one device. Theoretical calculation proved the feasibility of RF frequency conversion due to parametric effects in such LDs. The calculations considered the input signal applied to a laser as either an electrical signal (optoelectronic scheme) or an RF modulated optical signal (all-optical scheme), the frequency-converted output being in the form of a modulated stream of optical pulses, convenient for further transmission, with an electrical signal as a by-product. In [3], optoelectronic up-conversion has been performed using self-pulsating lasers with subcarrier modulation in optical communications in view. The results of both [1-2] and [3] experimentally demonstrate the feasibility of frequency mixing in GHz range using self-pulsing lasers, but little study has been performed so far of the mixing efficiency, and the spectral properties of the device have been only studied theoretically [2] for the case of mode locked extended-cavity lasers. Here, we investigate, in more detail, the issue of the efficiency of the optoelectronic frequency conversion in dependency of frequency (in different frequency ranges) and intensity of the modulation signal for monolithic cavity Q-switched and mode locked lasers.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134532969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Seki, H. Oohasi, H. Sugiura, T. Hirono, K. Yokoyama
InP-based strained-layer (SL) multiple-quantum-well (MQW) lasers operating at a wavelength of 1.3 μm have attracted much interest due to their potential applications to fiber-in-the-loop (FITL) or fiber-to-the-home (FTTH) systems [1], [2]. For these applications, it becomes important to improve the temperature sensitivity of device properties over a wide range of operating temperatures. We have recently derived the basic design rule for highly-efficient operation of InP-based SL-MQW lasers at elevated temperatures [3]. The SL-MQW lasers fabricated according to this design rule have exhibited high external differential quantum efficiency over 58% in the temperature range up to 363 K [3]. In this paper, we present a theoretical and experimental study on the temperature sensitivity of the differential quantum efficiency and threshold current of 1.3-μm InP-based SL-MQW lasers.
{"title":"Theoretical and Experimental Study on the Temperature Sensitivity of High-Efficiency 1.3-μm InP-Based Strained MQW Lasers","authors":"S. Seki, H. Oohasi, H. Sugiura, T. Hirono, K. Yokoyama","doi":"10.1364/slada.1995.wa.3","DOIUrl":"https://doi.org/10.1364/slada.1995.wa.3","url":null,"abstract":"InP-based strained-layer (SL) multiple-quantum-well (MQW) lasers operating at a wavelength of 1.3 μm have attracted much interest due to their potential applications to fiber-in-the-loop (FITL) or fiber-to-the-home (FTTH) systems [1], [2]. For these applications, it becomes important to improve the temperature sensitivity of device properties over a wide range of operating temperatures. We have recently derived the basic design rule for highly-efficient operation of InP-based SL-MQW lasers at elevated temperatures [3]. The SL-MQW lasers fabricated according to this design rule have exhibited high external differential quantum efficiency over 58% in the temperature range up to 363 K [3]. In this paper, we present a theoretical and experimental study on the temperature sensitivity of the differential quantum efficiency and threshold current of 1.3-μm InP-based SL-MQW lasers.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116774004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.17
H. Yoshida, T. Tezuka, S. Nunoue
Recently, spontaneous emission enhancement in pillar-type microcavities was reported for the first time by the authors.1) This type of cavity structure is relatively easy to fabricate and is suited to large scale integration of surface emitting laser arrays.2) It has been predicted that microcavity lasers, whose cavity size is of the order of one or a few times of the emission wavelength, have the potential for realizing ultralow thresholds (<1μA) and ultrafast modulation (>20GHz).3,4) Ultimately, low threshold lasers imply, to some extent, smaller lasers. To realize such lasers, reduction of losses of carriers and photons due to surface recombination and scattering of light in the cavity structures are very important points. In this paper we show lasing characteristics of micron size cavities up to 2.5μm in diameter. We also show experimental studies of the cavity size dependence of lasing characteristics and microscopic reflection spectra of pillar-type microcavity lasers and discuss their relation to surface recombination and optical losses due to the scattering of light on the sidewalls.
{"title":"Lasing characteristics of pillar-type microcavity lasers","authors":"H. Yoshida, T. Tezuka, S. Nunoue","doi":"10.1364/slada.1995.tue.17","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.17","url":null,"abstract":"Recently, spontaneous emission enhancement in pillar-type microcavities was reported for the first time by the authors.1) This type of cavity structure is relatively easy to fabricate and is suited to large scale integration of surface emitting laser arrays.2) It has been predicted that microcavity lasers, whose cavity size is of the order of one or a few times of the emission wavelength, have the potential for realizing ultralow thresholds (<1μA) and ultrafast modulation (>20GHz).3,4) Ultimately, low threshold lasers imply, to some extent, smaller lasers. To realize such lasers, reduction of losses of carriers and photons due to surface recombination and scattering of light in the cavity structures are very important points. In this paper we show lasing characteristics of micron size cavities up to 2.5μm in diameter. We also show experimental studies of the cavity size dependence of lasing characteristics and microscopic reflection spectra of pillar-type microcavity lasers and discuss their relation to surface recombination and optical losses due to the scattering of light on the sidewalls.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125042630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tud.7
K. Choquette, R. P. Schneider, K. Lear, M. Crawford, K. Geib, J. Figiel, R. Hull
The unique properties of vertical-cavity surface emitting lasers (VCSELs), such as circular output beam, single longitudinal mode, and 2-dimensional array capability, make them promising light sources for a variety of applications, including optical data links, data storage, display and printing systems. Moreover, on-wafer testing and compatibility with traditional integrated circuit fabrication technologies make VCSEL manufacture feasible and potentially inexpensive. Recently, VCSELs fabricated using "wet" oxidation1 have demonstrated the lowest threshold current (91µA),2 lowest threshold voltage (45mV above photon gap),3 and highest power conversion efficiency (52%)4 ever reported in VCSELs. The latter two results were obtained from an all semiconductor VCSEL structure that utilizes selective oxidation to form buried oxide layers. The low index oxide layers form current apertures sandwiching the active region to efficiently confine injected carriers as well as transversely confine the emitted photons. In this paper we show that the fabrication uniformity we have obtained using our selective oxidation process can reproducibly yield high performance VCSELs that are attractive for potential applications. In addition, these lasers exhibit high performance over a wide emission wavelength range from a given wafer. Finally, our selectively oxidized device structure is demonstrated to be robust and amenable to a variety emission wavelengths, currently extending from the infra-red to visible.
{"title":"Robust and Wavelength Insensitive Performance of Selectively Oxidized Vertical-Cavity Lasers","authors":"K. Choquette, R. P. Schneider, K. Lear, M. Crawford, K. Geib, J. Figiel, R. Hull","doi":"10.1364/slada.1995.tud.7","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.7","url":null,"abstract":"The unique properties of vertical-cavity surface emitting lasers (VCSELs), such as circular output beam, single longitudinal mode, and 2-dimensional array capability, make them promising light sources for a variety of applications, including optical data links, data storage, display and printing systems. Moreover, on-wafer testing and compatibility with traditional integrated circuit fabrication technologies make VCSEL manufacture feasible and potentially inexpensive. Recently, VCSELs fabricated using \"wet\" oxidation1 have demonstrated the lowest threshold current (91µA),2 lowest threshold voltage (45mV above photon gap),3 and highest power conversion efficiency (52%)4 ever reported in VCSELs. The latter two results were obtained from an all semiconductor VCSEL structure that utilizes selective oxidation to form buried oxide layers. The low index oxide layers form current apertures sandwiching the active region to efficiently confine injected carriers as well as transversely confine the emitted photons. In this paper we show that the fabrication uniformity we have obtained using our selective oxidation process can reproducibly yield high performance VCSELs that are attractive for potential applications. In addition, these lasers exhibit high performance over a wide emission wavelength range from a given wafer. Finally, our selectively oxidized device structure is demonstrated to be robust and amenable to a variety emission wavelengths, currently extending from the infra-red to visible.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130106849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tua.3
T. Ouchi, Masao Majima, Sotomitsu Ikeda, T. Ono, M. Uchida, Yuichi Handa
Experimental and theoretical studies on polarization bistability or switching in laser diodes have been investigated[1]-[3]. Using a tensilely strained quantum-well structure, highly efficient polarization switching has been demonstrated in multi-electrode Fabry-Perot lasers[4]. For these devices, however, the switching has been observed with multi longitudinal mode operation, which are not suitable for optical frequency division multiplexing systems.
{"title":"TE/TM polarization switching with single longitudinal mode operation in GaAs/AlGaAs MQW DFB Lasers","authors":"T. Ouchi, Masao Majima, Sotomitsu Ikeda, T. Ono, M. Uchida, Yuichi Handa","doi":"10.1364/slada.1995.tua.3","DOIUrl":"https://doi.org/10.1364/slada.1995.tua.3","url":null,"abstract":"Experimental and theoretical studies on polarization bistability or switching in laser diodes have been investigated[1]-[3]. Using a tensilely strained quantum-well structure, highly efficient polarization switching has been demonstrated in multi-electrode Fabry-Perot lasers[4]. For these devices, however, the switching has been observed with multi longitudinal mode operation, which are not suitable for optical frequency division multiplexing systems.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117334387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.8
Ching-Fuh Lin
A multi-wavelength laser source is important for applications in areas such as wavelength-division multiplexing (WDM), interferometry, lidar and optical data storage. Simultaneous oscillation of multipe wavelengths have been demonstrated in several methods including spatially chirped Bragg reflector vertical cavity surface emitting laser (VCSEL) arrays,1 multichannel grating cavity (MGC) laser,2 multistripe array grating integrated (MAGIC) laser,3 and multi-wavelength DFB laser array by control selective area MOVPE.4 In those devices, arrays are required for the generation of multi-wavelength oscillation. Each array element is responsible for its individual wavelength oscillation. In this work, it is demonstrated that a single-stripe Fabry-Perot laser diode is able to oscillate at selected multiple wavelengths with a wavelength separation ≥1.3 nm, several times larger than the Fabry-Perot longitudinal mode spacing.
{"title":"Selected Multi-Wavelength Oscillation of a Semiconductor Laser in an External Cavity","authors":"Ching-Fuh Lin","doi":"10.1364/slada.1995.tue.8","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.8","url":null,"abstract":"A multi-wavelength laser source is important for applications in areas such as wavelength-division multiplexing (WDM), interferometry, lidar and optical data storage. Simultaneous oscillation of multipe wavelengths have been demonstrated in several methods including spatially chirped Bragg reflector vertical cavity surface emitting laser (VCSEL) arrays,1 multichannel grating cavity (MGC) laser,2 multistripe array grating integrated (MAGIC) laser,3 and multi-wavelength DFB laser array by control selective area MOVPE.4 In those devices, arrays are required for the generation of multi-wavelength oscillation. Each array element is responsible for its individual wavelength oscillation. In this work, it is demonstrated that a single-stripe Fabry-Perot laser diode is able to oscillate at selected multiple wavelengths with a wavelength separation ≥1.3 nm, several times larger than the Fabry-Perot longitudinal mode spacing.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129565630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tuc.3
Sushma Gupta, R. Jones, R. Jain, J. Walpole
Wavelength-tunable high-power diode lasers with narrow-line widths and diffraction-limited outputs are needed for numerous applications including diode-based nonlinear frequency conversion, coherent radar, coherent free-space communications, and spectroscopic applications. The tapered-amplifier gain-guided design [1] has been shown to be a very effective means for achieving high output powers(>1W cw) in a single-lobed diffraction-limited beam [2,3]. Although single longitudinal mode operation using a master-oscillator-power-amplifier (MOPA) scheme, with a monolithic Bragg reflector for the master-oscillator has been demonstrated [4], these structures have very limited tuning ranges (typically < 3 nm), and involve careful adjustment and regulation of the temperature. Broader tuning ranges (~35 nm) of -1 W power levels were demonstrated subsequently by using an external-cavity grating-tuned configuration at wavelengths near 860 nm [5], followed by demonstration of ~0.5 W power levels at other wavelength ranges. This work reports the first demonstration of broadly-tunable narrow-linewidth high-power operation (~1.8W cw, and up to 3 W quasi-cw) in the 960-980 nm wavelength range, to develop a source that is critical for a number of applications including high-power blue generation via quasi-phase matched doubling and spectroscopic study of saturation characteristics of Er-codoped amplifiers and lasers in a variety of host media.
{"title":"A high-power (~2W) external-cavity cw diode laser tunable from 960 - 980 nm","authors":"Sushma Gupta, R. Jones, R. Jain, J. Walpole","doi":"10.1364/slada.1995.tuc.3","DOIUrl":"https://doi.org/10.1364/slada.1995.tuc.3","url":null,"abstract":"Wavelength-tunable high-power diode lasers with narrow-line widths and diffraction-limited outputs are needed for numerous applications including diode-based nonlinear frequency conversion, coherent radar, coherent free-space communications, and spectroscopic applications. The tapered-amplifier gain-guided design [1] has been shown to be a very effective means for achieving high output powers(>1W cw) in a single-lobed diffraction-limited beam [2,3]. Although single longitudinal mode operation using a master-oscillator-power-amplifier (MOPA) scheme, with a monolithic Bragg reflector for the master-oscillator has been demonstrated [4], these structures have very limited tuning ranges (typically < 3 nm), and involve careful adjustment and regulation of the temperature. Broader tuning ranges (~35 nm) of -1 W power levels were demonstrated subsequently by using an external-cavity grating-tuned configuration at wavelengths near 860 nm [5], followed by demonstration of ~0.5 W power levels at other wavelength ranges. This work reports the first demonstration of broadly-tunable narrow-linewidth high-power operation (~1.8W cw, and up to 3 W quasi-cw) in the 960-980 nm wavelength range, to develop a source that is critical for a number of applications including high-power blue generation via quasi-phase matched doubling and spectroscopic study of saturation characteristics of Er-codoped amplifiers and lasers in a variety of host media.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128307942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.9
N. Morozova, Y. C. Lee
In recent years, many papers have been published about the thermal properties of a single vertical cavity surface emitting laser (VCSEL) and two-dimensional (2-D) arrays. However, a thermal model of VCSEL-based optoelectronic modules has needed to be developed, since the temperature distribution and heat dissipation in optoelectronic packaging affect the device's output characteristics. The device heating places upper limits on the maximum obtainable power as well as on the temperature range of operation. The development of reliable VCSEL-based optoelectronic modules strongly depends on proper thermal management.
{"title":"Thermal Modeling of VCSEL-based Optoelectronic Modules","authors":"N. Morozova, Y. C. Lee","doi":"10.1364/slada.1995.tue.9","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.9","url":null,"abstract":"In recent years, many papers have been published about the thermal properties of a single vertical cavity surface emitting laser (VCSEL) and two-dimensional (2-D) arrays. However, a thermal model of VCSEL-based optoelectronic modules has needed to be developed, since the temperature distribution and heat dissipation in optoelectronic packaging affect the device's output characteristics. The device heating places upper limits on the maximum obtainable power as well as on the temperature range of operation. The development of reliable VCSEL-based optoelectronic modules strongly depends on proper thermal management.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"150 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120932857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tub.4
P. Millar, K. Christian, C. Field
The small size, high efficiency, high reliability and direct modulation capabilities of semiconductor lasers make them extremely attractive for space flight applications. In this paper we report on a high sensitivity semiconductor laser ranging system developed for the Gravity And Magnetic Earth Surveyor (GAMES) for measuring variations in the planet's gravity field [1].
{"title":"Demonstration of High Sensitivity Laser Ranging System","authors":"P. Millar, K. Christian, C. Field","doi":"10.1364/slada.1995.tub.4","DOIUrl":"https://doi.org/10.1364/slada.1995.tub.4","url":null,"abstract":"The small size, high efficiency, high reliability and direct modulation capabilities of semiconductor lasers make them extremely attractive for space flight applications. In this paper we report on a high sensitivity semiconductor laser ranging system developed for the Gravity And Magnetic Earth Surveyor (GAMES) for measuring variations in the planet's gravity field [1].","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116172311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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