Ecological concerns and time and cost saving measures have started a trend towards dry-processed, high quality image recording media for digital medical and graphic arts imaging applications. As compared to silver-halide film based systems, the photosensitive layers in most of these media are considerably less sensitive than traditional wet-processed film and therefore require a high laser power for exposure. In addition, advanced screening methods, like FM or stochastic screening, require an extremely well controlled laser spot size. The most recent developments in the graphic arts industry are directed towards eliminating film as an intermediate step for plate-making altogether and instead writing the image (comprising text, line art and pictures) directly onto plates. What these technological developments have in common is that, independent of the specific method for implementation, they all rely on various high power laser sources with extremely well controlled beam properties for writing the image. This talk will address the present status of laser requirements for non-silver-halide-based medical and graphic arts printing, as well as impending industry-wide technological changes and the resulting “wish list” for advanced laser sources.
{"title":"High power lasers for medical and graphic arts printing applications","authors":"W. Stutius, L. Heath","doi":"10.1364/slada.1995.mc.1","DOIUrl":"https://doi.org/10.1364/slada.1995.mc.1","url":null,"abstract":"Ecological concerns and time and cost saving measures have started a trend towards dry-processed, high quality image recording media for digital medical and graphic arts imaging applications. As compared to silver-halide film based systems, the photosensitive layers in most of these media are considerably less sensitive than traditional wet-processed film and therefore require a high laser power for exposure. In addition, advanced screening methods, like FM or stochastic screening, require an extremely well controlled laser spot size. The most recent developments in the graphic arts industry are directed towards eliminating film as an intermediate step for plate-making altogether and instead writing the image (comprising text, line art and pictures) directly onto plates. What these technological developments have in common is that, independent of the specific method for implementation, they all rely on various high power laser sources with extremely well controlled beam properties for writing the image. This talk will address the present status of laser requirements for non-silver-halide-based medical and graphic arts printing, as well as impending industry-wide technological changes and the resulting “wish list” for advanced laser sources.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"274 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124433254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Laser diode arrays are inexpensive, compact, efficient, and reliable light sources. However, the output beam, which is highly elliptical, is difficult to both efficiently collect and concentrate. This has limited continuous wave (CW) diode sources to power levels under 100 Watts. The fast axis of the laser diode array output tends to have good beam quality, M2~ 2, and a source size of ~ 1 um. The slow axis of laser diode broad stripes and of array bars is highly multimode, typically having an angular distribution of 10 degrees at the 1/e2 power points. The slow axis beam quality for a 500 um wide stripe is thus M2~ 70, and M2~ 1400 for a one centimeter array. One means of improving the brightness is to individually fiber couple broad stripe diodes, and then bundle the fiber ends together. Another is to collimate the fast axis of one centimeter arrays using a fiber lens1, and then fiber couple into a linear array of fibers. The output ends of the fibers are also bundled together. Both techniques are compact and relatively simple, and power is scaled by increasing the number of fibers in the bundle. M2 ~ 350 are available at 60 Watts output using the latter technique. It is difficult to scale beyond 100 Watts without increasing M2 to values greater than 500. This is due to loss of brightness in fiber coupling, as an essentially linear source is being coupled into a round fiber, or in mode mixing as light propagates through the fiber. Brightness is further reduced in fiber bundling by the presence of the fiber cladding, and by the less than unity packing factor of round fibers.
{"title":"Non-imaging Laser Diode Array Beam Shaper","authors":"D. Caffey, W. Clarkson","doi":"10.1364/slada.1995.mc.4","DOIUrl":"https://doi.org/10.1364/slada.1995.mc.4","url":null,"abstract":"Laser diode arrays are inexpensive, compact, efficient, and reliable light sources. However, the output beam, which is highly elliptical, is difficult to both efficiently collect and concentrate. This has limited continuous wave (CW) diode sources to power levels under 100 Watts. The fast axis of the laser diode array output tends to have good beam quality, M2~ 2, and a source size of ~ 1 um. The slow axis of laser diode broad stripes and of array bars is highly multimode, typically having an angular distribution of 10 degrees at the 1/e2 power points. The slow axis beam quality for a 500 um wide stripe is thus M2~ 70, and M2~ 1400 for a one centimeter array. One means of improving the brightness is to individually fiber couple broad stripe diodes, and then bundle the fiber ends together. Another is to collimate the fast axis of one centimeter arrays using a fiber lens1, and then fiber couple into a linear array of fibers. The output ends of the fibers are also bundled together. Both techniques are compact and relatively simple, and power is scaled by increasing the number of fibers in the bundle. M2 ~ 350 are available at 60 Watts output using the latter technique. It is difficult to scale beyond 100 Watts without increasing M2 to values greater than 500. This is due to loss of brightness in fiber coupling, as an essentially linear source is being coupled into a round fiber, or in mode mixing as light propagates through the fiber. Brightness is further reduced in fiber bundling by the presence of the fiber cladding, and by the less than unity packing factor of round fibers.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"71 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113959749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An uncooled laser transmitter is cheaper and more reliable than a thermo-electrically cooled laser transmitter because of its simplicity in packaging. A low-cost, highly-reliable uncooled laser may have a strong influence on pushing fiber deployment closer to the home. For loop applications, the laser transmitter must operate reliably over the temperature range from -40 to 85°C. It is rather difficult to make high performance uncooled lasers in the long wavelength region (1.3-1.55 μm) using the conventional GaxIn1-xASyP1-y/InP materials system because the laser temperature performance suffers from Auger recombination in the low bandgap material and poor electron confinement resulting from the small conduction band offset (ΔEc=0.4ΔEg). We will discuss the design of uncooled lasers to minimize the changes in both threshold current and slope efficiency over the temperature range from -40 to 85 °C. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the AlxGayIn1-x-yAs/InP materials system instead of the conventional GaxIn1-xASyP1-y/InP materials system. Experimental results of the AlxGayIn1-x-yAs/InP strained quantum well lasers show superior high temperature performances as discussed below.
{"title":"High Temperature Uncooled Lasers","authors":"C. Zah, R. Bhat, T. Lee","doi":"10.1364/slada.1995.wa.2","DOIUrl":"https://doi.org/10.1364/slada.1995.wa.2","url":null,"abstract":"An uncooled laser transmitter is cheaper and more reliable than a\u0000 thermo-electrically cooled laser transmitter because of its simplicity\u0000 in packaging. A low-cost, highly-reliable uncooled laser may have a\u0000 strong influence on pushing fiber deployment closer to the home. For\u0000 loop applications, the laser transmitter must operate reliably over\u0000 the temperature range from -40 to 85°C. It is rather difficult to make\u0000 high performance uncooled lasers in the long wavelength region\u0000 (1.3-1.55 μm) using the conventional\u0000 GaxIn1-xASyP1-y/InP\u0000 materials system because the laser temperature performance suffers\u0000 from Auger recombination in the low bandgap material and poor electron\u0000 confinement resulting from the small conduction band offset\u0000 (ΔEc=0.4ΔEg). We will discuss the design of\u0000 uncooled lasers to minimize the changes in both threshold current and\u0000 slope efficiency over the temperature range from -40 to 85 °C. To\u0000 prevent carrier overflow under high-temperature operation, the\u0000 electron confinement energy is increased by using the\u0000 AlxGayIn1-x-yAs/InP materials system\u0000 instead of the conventional\u0000 GaxIn1-xASyP1-y/InP\u0000 materials system. Experimental results of the\u0000 AlxGayIn1-x-yAs/InP strained quantum\u0000 well lasers show superior high temperature performances as discussed\u0000 below.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130688344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tua.2
P. Landais, G. Pham, G. Duan, C. Chabran, P. Gallion, J. Jacquet
Clock recovery is a major key function of any transmission systems. All-optical devices are very attractive due to their high speed and their simplicity as electro-optic conversion is not necessary. It has been shown experimentally that the self-pulsation (SP) in a multielectrode distributed feedback (DFB) laser can be synchronised to the data clock rate of an incoming optical return to zero (RZ) signal. This property makes SP lasers (SPL) good candidates for clock recovery in transmission systems. Jinno et al. [1] have shown a clock extraction at 200 Mbit/s and Barnsley et al. [2] at 5 Gbit/s. They both have used multielectrode SPL with one section operated as saturable absorber section, which limits SP frequency due to the limitation of carrier lifetime. Feiste et al. [3] have extracted 18 GHz clock by using a SP DFB laser without saturable absorber. We can note that in these experiments, the clock recovery occurs in injection locking conditions where the wavelength of the injected optical signal is nearly identical to the SPL wavelength. Despite the fact that such configuration allows optical carrier recovery with a few µW injected, it seriously limits the application of the SPL to clock recovery. This paper reports for the first time that a 3.8 GHz clock extraction with low time-jitter can be obtained even under conditions of large wavelength difference.
{"title":"4 GHz All-Optical Clock Recovery Using a Self-Pulsating Multielectrode Distributed Feedback Laser","authors":"P. Landais, G. Pham, G. Duan, C. Chabran, P. Gallion, J. Jacquet","doi":"10.1364/slada.1995.tua.2","DOIUrl":"https://doi.org/10.1364/slada.1995.tua.2","url":null,"abstract":"Clock recovery is a major key function of any transmission systems. All-optical devices are very attractive due to their high speed and their simplicity as electro-optic conversion is not necessary. It has been shown experimentally that the self-pulsation (SP) in a multielectrode distributed feedback (DFB) laser can be synchronised to the data clock rate of an incoming optical return to zero (RZ) signal. This property makes SP lasers (SPL) good candidates for clock recovery in transmission systems. Jinno et al. [1] have shown a clock extraction at 200 Mbit/s and Barnsley et al. [2] at 5 Gbit/s. They both have used multielectrode SPL with one section operated as saturable absorber section, which limits SP frequency due to the limitation of carrier lifetime. Feiste et al. [3] have extracted 18 GHz clock by using a SP DFB laser without saturable absorber. We can note that in these experiments, the clock recovery occurs in injection locking conditions where the wavelength of the injected optical signal is nearly identical to the SPL wavelength. Despite the fact that such configuration allows optical carrier recovery with a few µW injected, it seriously limits the application of the SPL to clock recovery. This paper reports for the first time that a 3.8 GHz clock extraction with low time-jitter can be obtained even under conditions of large wavelength difference.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134321456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.2
A. Egan, P. Rees, J. O'Gorman, J. Hegarty, G. Farrell, P. Phelan
Higher speed requirements in communication systems have led to demands for fast optical sub-systems. Important aspects of such sub-systems will be the synchronization of self-pulsating laser diode (SP LD) emission to electrical or optical signals and timing extraction, aspects which have already been demonstrated experimentally. Consequently, these devices may play important roles as functional elements in transparent transmission systems. Effective implementation of these functions in communications systems using these devices depends on a more complete understanding of synchronization of SP LDs than exists at present. In this paper we address a number of important timing issues relating to electro-optical synchronization. We have experimentally observed for the first time that a phase difference exists between the input electrical signal and the output optical signal of a synchronized SP LD and we have experimentally and theoretically investigated the nature and behaviour of this phase difference. We have also numerically investigated the impact of synchronization of SP LDs on timing jitter in the emitted optical pulses.
{"title":"Dynamics of electro-optical synchronization of self-pulsating laser diodes","authors":"A. Egan, P. Rees, J. O'Gorman, J. Hegarty, G. Farrell, P. Phelan","doi":"10.1364/slada.1995.tue.2","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.2","url":null,"abstract":"Higher speed requirements in communication systems have led to demands\u0000 for fast optical sub-systems. Important aspects of such sub-systems\u0000 will be the synchronization of self-pulsating laser diode (SP LD)\u0000 emission to electrical or optical signals and timing extraction,\u0000 aspects which have already been demonstrated experimentally.\u0000 Consequently, these devices may play important roles as functional\u0000 elements in transparent transmission systems. Effective implementation\u0000 of these functions in communications systems using these devices\u0000 depends on a more complete understanding of synchronization of SP LDs\u0000 than exists at present. In this paper we address a number of important\u0000 timing issues relating to electro-optical synchronization. We have\u0000 experimentally observed for the first time that a phase difference\u0000 exists between the input electrical signal and the output optical\u0000 signal of a synchronized SP LD and we have experimentally and\u0000 theoretically investigated the nature and behaviour of this phase\u0000 difference. We have also numerically investigated the impact of\u0000 synchronization of SP LDs on timing jitter in the emitted optical\u0000 pulses.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122370293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Yakovlev, K. Moiseev, M. Mikhailova, O. G. Ershov
We present a new physical approach to design of III-V middle-infrared diode lasers which can lead to increasing operating temperature of InAs-based lasers. Main pecularity of proposed method is using interface radiative recombination of spatially-separated carriers in type II broken-gap p-p heterojunctions (HJs). Lattice-machted nondoped and doped GaIn0.17As0.22Sb layers with high quality interface were grown on p-InAs (100). It was established that GaIn0.17As0.22Sb/InAs HJ is type II with broken-gap alignment.
{"title":"Tunnel-Injection Laser Based on Type II Broken-Gap p-GaInAsSb/p-InAs Single Heterojunction","authors":"Y. Yakovlev, K. Moiseev, M. Mikhailova, O. G. Ershov","doi":"10.1364/slada.1995.mb.5","DOIUrl":"https://doi.org/10.1364/slada.1995.mb.5","url":null,"abstract":"We present a new physical approach to design of III-V middle-infrared diode lasers which can lead to increasing operating temperature of InAs-based lasers. Main pecularity of proposed method is using interface radiative recombination of spatially-separated carriers in type II broken-gap p-p heterojunctions (HJs). Lattice-machted nondoped and doped GaIn0.17As0.22Sb layers with high quality interface were grown on p-InAs (100). It was established that GaIn0.17As0.22Sb/InAs HJ is type II with broken-gap alignment.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"2677 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121822245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tub.5
J. Abshire, P. Millar, Xiaoli Sun
A laser ranging instrument is being developed to measure the spatial variations in the Earth's gravity field. It will range in space to a cube corner on a passive co-orbiting sub-satellite with a velocity accuracy of 20 to 50 um/sec by using AlGaAs lasers intensity modulated at 2 GHz.
{"title":"Semiconductor Laser-Based Ranging Instrument for Earth Gravity Measurements","authors":"J. Abshire, P. Millar, Xiaoli Sun","doi":"10.1364/slada.1995.tub.5","DOIUrl":"https://doi.org/10.1364/slada.1995.tub.5","url":null,"abstract":"A laser ranging instrument is being developed to measure the spatial\u0000 variations in the Earth's gravity field. It will range in space to a\u0000 cube corner on a passive co-orbiting sub-satellite with a velocity\u0000 accuracy of 20 to 50 um/sec by using AlGaAs lasers intensity modulated\u0000 at 2 GHz.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131440260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.pdp.3
Narasimha P.R. Bhadri, Sushma Gupta, R. Jain, D. Brinkmann, W. S. Fu, S. Swirhun
We describe the first report of the use of VCSELs for spectroscopic applications. Using a 760 nm VCSEL tuned to one of the weak A band transitions of oxygen, a minimum detectivity of 1600 ppm was obtained, in these preliminary experiments.
{"title":"Use of vertical cavity surface emitting lasers(VCSELs) for spectroscopic applications","authors":"Narasimha P.R. Bhadri, Sushma Gupta, R. Jain, D. Brinkmann, W. S. Fu, S. Swirhun","doi":"10.1364/slada.1995.pdp.3","DOIUrl":"https://doi.org/10.1364/slada.1995.pdp.3","url":null,"abstract":"We describe the first report of the use of VCSELs for spectroscopic applications. Using a 760 nm VCSEL tuned to one of the weak A band transitions of oxygen, a minimum detectivity of 1600 ppm was obtained, in these preliminary experiments.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130597263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.7
J. Leegwater
Theories of laser mode-locking were developed in the seventies for dye lasers. However, semiconductor lasers are characterized by quite different parameters and the approximations that can be justified for dye lasers break down for semiconductor lasers. In this paper we study the resulting pulse duration using the model introduced by New and Haus [1, 2] with both slow and fast absorbers. In the fast-and-slow-absorber model of Haus the electric field of the pulse after round-trip i is given by a i (t). While propagating through the cavity the pulse is modified by each of the elements of the cavity in some way.
{"title":"Theory of Sub-Picosecond Semiconductor Lasers","authors":"J. Leegwater","doi":"10.1364/slada.1995.tue.7","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.7","url":null,"abstract":"Theories of laser mode-locking were developed in the seventies for dye lasers. However, semiconductor lasers are characterized by quite different parameters and the approximations that can be justified for dye lasers break down for semiconductor lasers. In this paper we study the resulting pulse duration using the model introduced by New and Haus [1, 2] with both slow and fast absorbers. In the fast-and-slow-absorber model of Haus the electric field of the pulse after round-trip i is given by a\u0000 i\u0000 (t). While propagating through the cavity the pulse is modified by each of the elements of the cavity in some way.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121505398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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