S. Waltman, K. Petrov, U. Simon, L. Hollberg, F. Tittel, R. Curl
Tremendous potential exists for the application of diode laser sources for high sensitivity detection of atoms and molecules. Some of the obvious applications include pollution monitoring, medical diagnostics, industrial process monitoring, and analytic and atmospheric chemistry applications. Room-temperature, tunable diode laser sources provide the opportunity for constructing compact, transportable instrumentation. Unfortunately the wavelengths of most of the atomic and molecular transitions are not directly accessible with commercially available, room-temperature diode lasers. In particular many of the important molecular transitions are in the mid-infrared spectral region. However, this spectral region is accessible with difference-frequency-generation (DFG) using visible and near-IR lasers.
{"title":"Tunable Infrared Source by Difference Frequency Mixing Diode lasers and Diode pumped YAG, and Application to Methane Detection","authors":"S. Waltman, K. Petrov, U. Simon, L. Hollberg, F. Tittel, R. Curl","doi":"10.1364/slada.1995.mb.4","DOIUrl":"https://doi.org/10.1364/slada.1995.mb.4","url":null,"abstract":"Tremendous potential exists for the application of diode laser sources\u0000 for high sensitivity detection of atoms and molecules. Some of the\u0000 obvious applications include pollution monitoring, medical\u0000 diagnostics, industrial process monitoring, and analytic and\u0000 atmospheric chemistry applications. Room-temperature, tunable diode\u0000 laser sources provide the opportunity for constructing compact,\u0000 transportable instrumentation. Unfortunately the wavelengths of most\u0000 of the atomic and molecular transitions are not directly accessible\u0000 with commercially available, room-temperature diode lasers. In\u0000 particular many of the important molecular transitions are in the\u0000 mid-infrared spectral region. However, this spectral region is\u0000 accessible with difference-frequency-generation (DFG) using visible\u0000 and near-IR lasers.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121991676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tud.6
P. Floyd, M. Peters, L. Coldren, J. Merz
Vertical cavity surface emitting lasers (VCSELs) are interesting due to their single longitudinal mode operation, a circularly symmetric optical mode profile, and surface normal light emission. These characteristics make them ideal light sources in both free space optical communication systems and in short haul optical fiber communication systems.
{"title":"Impurity Induced Disordering for Improved Vertical Cavity Lasers","authors":"P. Floyd, M. Peters, L. Coldren, J. Merz","doi":"10.1364/slada.1995.tud.6","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.6","url":null,"abstract":"Vertical cavity surface emitting lasers (VCSELs) are interesting due to their single longitudinal mode operation, a circularly symmetric optical mode profile, and surface normal light emission. These characteristics make them ideal light sources in both free space optical communication systems and in short haul optical fiber communication systems.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114095228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tud.1
N. Basov, E. Dianov, V. Kozlovsky, A. Krysa, A. Nasibov, Y. Popov, A. Prokhorov, P. Trubenko, E. Shcherbakov
The use of a broad-bandgap II-VI semiconductors and their ternary and quaternary alloys for vertical-cavity surface-emitting laser (VCSEL) fabrication open a new additional possibilities for their design and applications. In particular, one of the promising using is the realization of a large screen color high definition TV (HDTV) laser projection systems, and flat panel color displays [1,2]. One of the main advantages of the II-VI VCSEL's, in this case, is the possibility of the full color HDTV laser screen creation based only on this materials. The bulk II-VI compounds were used recently for the first successful demonstration of the laser cathode ray tube (LCRT) and color laser TV system [3]. However, one of the limitations of this scheme was the sufficiently high E-beam current threshold, in particular, for the room-temperature operation.
{"title":"Blue-Green Electron Beam Pumped Vertical-Cavity Surface-Emitting Laser Using MBE Grown Modulated ZnCdSe/ZnSe Superlattice","authors":"N. Basov, E. Dianov, V. Kozlovsky, A. Krysa, A. Nasibov, Y. Popov, A. Prokhorov, P. Trubenko, E. Shcherbakov","doi":"10.1364/slada.1995.tud.1","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.1","url":null,"abstract":"The use of a broad-bandgap II-VI semiconductors and their ternary and quaternary alloys for vertical-cavity surface-emitting laser (VCSEL) fabrication open a new additional possibilities for their design and applications. In particular, one of the promising using is the realization of a large screen color high definition TV (HDTV) laser projection systems, and flat panel color displays [1,2]. One of the main advantages of the II-VI VCSEL's, in this case, is the possibility of the full color HDTV laser screen creation based only on this materials. The bulk II-VI compounds were used recently for the first successful demonstration of the laser cathode ray tube (LCRT) and color laser TV system [3]. However, one of the limitations of this scheme was the sufficiently high E-beam current threshold, in particular, for the room-temperature operation.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121458358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mid-infrared laser diodes are important sources for laser radar systems, molecular spectroscopy, and remote sensing of pollution and gases. InGaSbAs/GaAlSbAs lasers emitting at 2 μm are explored in detail since first room-temperature (RT) lasers [1-3] were demonstrated. However, a breakthrough in 3-4 μm lasers was made only recently [4-6]. Long wavelength lasers exhibit low characteristic temperature (T0 ≤ 30 K [6]), preventing them from operation at RT. One of the possible reasons of high threshold current at RT is Auger-recombination, which is proportional to cube of carrier density. Therefore, for long-wavelength lasers, it is especially important to decrease the carrier density at threshold.
{"title":"Theoretical Analysis of Gain in Compressive Strained Quantum Well InAlAsSb/GaSb Structures for 3-4 μm Lasers","authors":"R. Nabiev, C. Chang-Hasnain, H.K. Choi","doi":"10.1364/slada.1995.mb.6","DOIUrl":"https://doi.org/10.1364/slada.1995.mb.6","url":null,"abstract":"Mid-infrared laser diodes are important sources for laser radar systems, molecular spectroscopy, and remote sensing of pollution and gases. InGaSbAs/GaAlSbAs lasers emitting at 2 μm are explored in detail since first room-temperature (RT) lasers [1-3] were demonstrated. However, a breakthrough in 3-4 μm lasers was made only recently [4-6]. Long wavelength lasers exhibit low characteristic temperature (T0 ≤ 30 K [6]), preventing them from operation at RT. One of the possible reasons of high threshold current at RT is Auger-recombination, which is proportional to cube of carrier density. Therefore, for long-wavelength lasers, it is especially important to decrease the carrier density at threshold.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133551036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Nagarajan, R. Marsland, Benjamin Li, M. Verdiell, P. Wen, P. Braid, K. Dzurko, R. Craig
The transmitter in a high speed fiber optic system typically consists of a semiconductor laser that is either directly or externally modulated. Although, the small signal modulation bandwidth in semiconductor lasers have exceeded 30 GHz (Fig. 1), external modulation is the preferred method for systems operating at 10 GBit/s and beyond. This has to do with the detrimental effects of laser wavelength chirp under modulation which tends to limit the transmission distance in silica fiber [1]. In long distance fiber transmission using directly modulated lasers at 10 GBit/s, the dispersion limit has also been overcome by techniques [2,3] other than traditional dispersion compensation.
{"title":"High Speed Lasers Based Fiber Optic Systems","authors":"R. Nagarajan, R. Marsland, Benjamin Li, M. Verdiell, P. Wen, P. Braid, K. Dzurko, R. Craig","doi":"10.1364/slada.1995.ma.1","DOIUrl":"https://doi.org/10.1364/slada.1995.ma.1","url":null,"abstract":"The transmitter in a high speed fiber optic system typically consists of a semiconductor laser that is either directly or externally modulated. Although, the small signal modulation bandwidth in semiconductor lasers have exceeded 30 GHz (Fig. 1), external modulation is the preferred method for systems operating at 10 GBit/s and beyond. This has to do with the detrimental effects of laser wavelength chirp under modulation which tends to limit the transmission distance in silica fiber [1]. In long distance fiber transmission using directly modulated lasers at 10 GBit/s, the dispersion limit has also been overcome by techniques [2,3] other than traditional dispersion compensation.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134121271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tuc.2
S. Biellak, Y. Sun, S. Wong, A. Siegman
Semiconductor lasers with a variety of cavity geometries have been studied for nearly three decades. For wide stripe monolithic lasers (width > 20 μm), nearly all the resonators fabricated so far can be divided into two types: cleaved flat-mirror structures generally employing some form of gain or index guiding [1], and unstable-resonator diode lasers [2,3]. The stable-resonator geometries widely employed in ordinary gas and solid-state lasers [4] have not to date been realized in monolithic semiconductor lasers for a number of reasons. First, the technology to fabricate precisely curved end mirrors has not been widely available until recently. Second, nonlinear saturation and waveguiding effects are strong in semiconductor lasers, and hence lateral gain and index guiding can be expected to deform the modes of stable-resonator lasers at high power levels. Third, the rather weak transverse mode discrimination of stable resonators may not lead to good mode selection in diode lasers having high gain and large output coupling.
{"title":"A Monolithic Stable-Resonator Semiconductor Laser","authors":"S. Biellak, Y. Sun, S. Wong, A. Siegman","doi":"10.1364/slada.1995.tuc.2","DOIUrl":"https://doi.org/10.1364/slada.1995.tuc.2","url":null,"abstract":"Semiconductor lasers with a variety of cavity geometries have been studied for nearly three decades. For wide stripe monolithic lasers (width > 20 μm), nearly all the resonators fabricated so far can be divided into two types: cleaved flat-mirror structures generally employing some form of gain or index guiding [1], and unstable-resonator diode lasers [2,3]. The stable-resonator geometries widely employed in ordinary gas and solid-state lasers [4] have not to date been realized in monolithic semiconductor lasers for a number of reasons. First, the technology to fabricate precisely curved end mirrors has not been widely available until recently. Second, nonlinear saturation and waveguiding effects are strong in semiconductor lasers, and hence lateral gain and index guiding can be expected to deform the modes of stable-resonator lasers at high power levels. Third, the rather weak transverse mode discrimination of stable resonators may not lead to good mode selection in diode lasers having high gain and large output coupling.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117334761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.12
A. Sapia, J. Dellunde
Time jitter measurements in a repeatedly gain switched laser diode subject to a weak optical feedback are reported in this work. Reflections were induced by the tip of an optical fiber placed at a very short distance (10 μm) from the output laser facet. The results point out the importance of controlling the reflections due to optical elements inside dense packaged devices.
{"title":"Jitter Measurements in Gain Switched DFB Semiconductor Lasers Coupled to Optical Fibers","authors":"A. Sapia, J. Dellunde","doi":"10.1364/slada.1995.tue.12","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.12","url":null,"abstract":"Time jitter measurements in a repeatedly gain switched laser diode subject to a weak optical feedback are reported in this work. Reflections were induced by the tip of an optical fiber placed at a very short distance (10 μm) from the output laser facet. The results point out the importance of controlling the reflections due to optical elements inside dense packaged devices.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123143959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tua.4
D. Shire, C. L. Tang, M. Parker
Gain-controlled, intracavity-coupled in-plane and vertical cavity surface emitting lasers (VCSELs) fabricated from the same epitaxial material have recently been reported1-2. Earlier work on gain quenching and bistability in intracavity coupled lasers involved in-plane devices only3-5. It has been pointed out that the conditions for bistability in cross coupled lasers depend on the individual lasers' self- and cross-saturation coefficients6-7. The cross saturation terms are highest when the overlap of the two lasers' gain sections is maximized. Consequently, the hysteresis in the power output vs. power input characteristic of cross-coupled VCSEL and in-plane lasers is expected to be larger and more easily realized than that observed in cross-coupled in-plane lasers alone. We report the first observation of optical bistability in cross-coupled VCSEL and in-plane lasers, and we present an all-optical two-input NOR gate which was fabricated to demonstrate the flexibility of this switching technology.
{"title":"Optical Bistability and NOR-Gate Operation In Intracavity-Coupled In-Plane and Vertical Cavity Surface Emitting Lasers","authors":"D. Shire, C. L. Tang, M. Parker","doi":"10.1364/slada.1995.tua.4","DOIUrl":"https://doi.org/10.1364/slada.1995.tua.4","url":null,"abstract":"Gain-controlled, intracavity-coupled in-plane and vertical cavity surface emitting lasers (VCSELs) fabricated from the same epitaxial material have recently been reported1-2. Earlier work on gain quenching and bistability in intracavity coupled lasers involved in-plane devices only3-5. It has been pointed out that the conditions for bistability in cross coupled lasers depend on the individual lasers' self- and cross-saturation coefficients6-7. The cross saturation terms are highest when the overlap of the two lasers' gain sections is maximized. Consequently, the hysteresis in the power output vs. power input characteristic of cross-coupled VCSEL and in-plane lasers is expected to be larger and more easily realized than that observed in cross-coupled in-plane lasers alone. We report the first observation of optical bistability in cross-coupled VCSEL and in-plane lasers, and we present an all-optical two-input NOR gate which was fabricated to demonstrate the flexibility of this switching technology.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129775768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tud.3
G. S. Li, W. Yuen, S. Lim, K. Toh, L. Eng, C. Chang-Hasnain
Vertical cavity surface emitting lasers (VCSELs) and resonant cavity detectors are of great interest for optical communications applications. In order to obtain high performance devices with high yield, the epilayer thickness and growth rate must be controlled to within ±1.5 %. Conventional molecular beam epitaxy calibration method such as reflection high energy electron diffraction (RHEED) and ion-gauge beam flux measurements are limited to an accuracy of a few percent. To achieve higher accuracy, various in situ optical techniques have been investigated for growth rate calibration [l]-[2] and for real time growth control [3]-[4]. The former is desirable because of its versatility and cost-effectiveness.
{"title":"Accurate Growth of Submilliampere Threshold Current Vertical Cavity Surface Emitting Laser using Diode Laser Reflectometry in a Molecular Beam Epitaxy System","authors":"G. S. Li, W. Yuen, S. Lim, K. Toh, L. Eng, C. Chang-Hasnain","doi":"10.1364/slada.1995.tud.3","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.3","url":null,"abstract":"Vertical cavity surface emitting lasers (VCSELs) and resonant cavity detectors are of great interest for optical communications applications. In order to obtain high performance devices with high yield, the epilayer thickness and growth rate must be controlled to within ±1.5 %. Conventional molecular beam epitaxy calibration method such as reflection high energy electron diffraction (RHEED) and ion-gauge beam flux measurements are limited to an accuracy of a few percent. To achieve higher accuracy, various in situ optical techniques have been investigated for growth rate calibration [l]-[2] and for real time growth control [3]-[4]. The former is desirable because of its versatility and cost-effectiveness.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"109 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120915738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.13
Takashi Sato, S. Matsuda, K. Shibata, Shigeki Yamamoto, M. Ohkawa, Takeo Maruyama, M. Shimba
Since the development of the first semiconductor lasers, we know that the oscillation wavelength of a semiconductor laser depends on injection current, laser temperature and magnetic field. Among these factors, injection current and laser temperature are the principal means by which to control the wavelength of laser diodes, in many practical applications. The wavelength shift of laser diodes subjected to strong magnetic fields in low temperature was reported from a physical point of view in the early 60’s[1]. Even after such work was further progressed, little time was spent actually testing semiconductor lasers in a magnetic field except for the spin-flip Raman[2] and quantum well[3] lasers.
{"title":"Oscillation wavelength shift characteristics of a semiconductor laser in a magnetic field -Observation using a beat note-","authors":"Takashi Sato, S. Matsuda, K. Shibata, Shigeki Yamamoto, M. Ohkawa, Takeo Maruyama, M. Shimba","doi":"10.1364/slada.1995.tue.13","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.13","url":null,"abstract":"Since the development of the first semiconductor lasers, we know that the oscillation wavelength of a semiconductor laser depends on injection current, laser temperature and magnetic field. Among these factors, injection current and laser temperature are the principal means by which to control the wavelength of laser diodes, in many practical applications. The wavelength shift of laser diodes subjected to strong magnetic fields in low temperature was reported from a physical point of view in the early 60’s[1]. Even after such work was further progressed, little time was spent actually testing semiconductor lasers in a magnetic field except for the spin-flip Raman[2] and quantum well[3] lasers.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123906327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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