Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.5
Ziping Jiang, I. White, F. Laughton, R. Penty, M. McCall, H. Tsang
One promising way of generating high power diffraction-limited output from a semiconductor laser diode is to fabricate a double tapered device by varying the stripe width along the cavity, in order to produce wide stripes at the facets and a narrow stripe at the center. The narrow stripe near the middle of the cavity acts as a spatial filter to maintain a good quality spatially coherent output, whilst the wide stripes at the facets have the dual benefits of increasing the active volume (thus increasing optical power generation) and increasing the threshold power before catastrophic facet damage occurs. High power single lateral mode operation has already been demonstrated by using various tapered devices[l, 2, 3] and much work has been carried out on tapered semiconductor laser amplifiers [5, 4]. However, the nature of double tapered device in obtaining high power and diffraction limited output is still poorly understood and optimization in design is badly needed.
{"title":"High power diffraction-limited ultrashort pulse generation from double tapered semiconductor laser diodes","authors":"Ziping Jiang, I. White, F. Laughton, R. Penty, M. McCall, H. Tsang","doi":"10.1364/slada.1995.tue.5","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.5","url":null,"abstract":"One promising way of generating high power diffraction-limited output from a semiconductor laser diode is to fabricate a double tapered device by varying the stripe width along the cavity, in order to produce wide stripes at the facets and a narrow stripe at the center. The narrow stripe near the middle of the cavity acts as a spatial filter to maintain a good quality spatially coherent output, whilst the wide stripes at the facets have the dual benefits of increasing the active volume (thus increasing optical power generation) and increasing the threshold power before catastrophic facet damage occurs. High power single lateral mode operation has already been demonstrated by using various tapered devices[l, 2, 3] and much work has been carried out on tapered semiconductor laser amplifiers [5, 4]. However, the nature of double tapered device in obtaining high power and diffraction limited output is still poorly understood and optimization in design is badly needed.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124576171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Yamada, M. Tachikawa, T. Sasaki, H. Mori, Y. Kadota, S. Matsumoto, K. Kishi
Opto-electronic integrated circuits (OEICs), especially photonic devices on Si, are attractive because of their potential to combine photonic functions with highly integrated silicon electronic circuits. We have already demonstrated long term cw operation of a 1.5-μm multiple quantum well laser1) and high-temperature cw operation of a 1.3-μm double heterostructure (DH) laser2) heteroepitaxially grown on Si. Low threshold current lasers are required to reduce the power consumption of OEICs. An effective approach to reduce the threshold current is burying lasers with semi-insulating InP. The semi-insulating buried structure is also indispensable to reduce parasitic capacitance for high-frequency operation. Though a semi-insulating InP layer has been successfully grown on a Si substrate,3) there are no reports on its application to devices on Si.
{"title":"An Fe-InP buried 1.3-μm double heterostructure laser heteroepitaxially grown on Si","authors":"T. Yamada, M. Tachikawa, T. Sasaki, H. Mori, Y. Kadota, S. Matsumoto, K. Kishi","doi":"10.1364/slada.1995.wa.5","DOIUrl":"https://doi.org/10.1364/slada.1995.wa.5","url":null,"abstract":"Opto-electronic integrated circuits (OEICs), especially photonic devices on Si, are attractive because of their potential to combine photonic functions with highly integrated silicon electronic circuits. We have already demonstrated long term cw operation of a 1.5-μm multiple quantum well laser1) and high-temperature cw operation of a 1.3-μm double heterostructure (DH) laser2) heteroepitaxially grown on Si. Low threshold current lasers are required to reduce the power consumption of OEICs. An effective approach to reduce the threshold current is burying lasers with semi-insulating InP. The semi-insulating buried structure is also indispensable to reduce parasitic capacitance for high-frequency operation. Though a semi-insulating InP layer has been successfully grown on a Si substrate,3) there are no reports on its application to devices on Si.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130894335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tud.8
Yong Cheng, G. Yang, P. Dapkus
High performance folded-cavity surface emitting lasers (FCSEL's) utilizing 45° deflection mirrors to couple the light in the horizontal cavity towards the surface are attractive devices for applications to optoelectronic integrated circuits. We report here low threshold current and high efficiency InGaAs/GaAs FCSEL's that employ high quality internal 45° deflectors. A simplified process involving a stop etch to position the surface emitting output mirror close to the waveguide and ion-beam-etching (IBE) to form the 45° deflecting mirror is presented.
{"title":"High-performance folded-cavity surface-emitting InGaAs/GaAs lasers fabricated by ion-beam-etching technique","authors":"Yong Cheng, G. Yang, P. Dapkus","doi":"10.1364/slada.1995.tud.8","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.8","url":null,"abstract":"High performance folded-cavity surface emitting lasers (FCSEL's) utilizing 45° deflection mirrors to couple the light in the horizontal cavity towards the surface are attractive devices for applications to optoelectronic integrated circuits. We report here low threshold current and high efficiency InGaAs/GaAs FCSEL's that employ high quality internal 45° deflectors. A simplified process involving a stop etch to position the surface emitting output mirror close to the waveguide and ion-beam-etching (IBE) to form the 45° deflecting mirror is presented.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130548229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.pdp.1
P. Eliseev, M. Osiński
The material parameters of GaN active medium are reviewed and specified for the numerical modeling of both edge- and surface-emitting laser devices. Calculations are presented for the oscillation strength, recombination coefficients, quantum yield and modal gain in GaN/GaAlN heterostructure. Threshold currents below 10 kA/cm2 at room temperature are predicted in optimized diode structures.
{"title":"Modeling Considerations for UV Diode Lasers Based on GaN","authors":"P. Eliseev, M. Osiński","doi":"10.1364/slada.1995.pdp.1","DOIUrl":"https://doi.org/10.1364/slada.1995.pdp.1","url":null,"abstract":"The material parameters of GaN active medium are reviewed and specified for the numerical modeling of both edge- and surface-emitting laser devices. Calculations are presented for the oscillation strength, recombination coefficients, quantum yield and modal gain in GaN/GaAlN heterostructure. Threshold currents below 10 kA/cm2 at room temperature are predicted in optimized diode structures.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134069661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
When semiconductor lasers are used in optical telecommunication and optical interconnect applications, it is desirable to have as low an electrical power consumption as possible, i.e. a low operating current. However, if used in a high data transmission rate system, there may be a minimum requisite modulation bandwidth. In addition, signal-to-noise considerations often demand a minimum optical output power. While lowering the threshold current often improves the bandwidth and output power at a given operating current, it is not true that a laser optimized solely for the lowest threshold current will have the lowest operating current when biased to meet the requirements of a particular system. In this talk we discuss how the laser device parameters are optimized to produce the lowest operating current in applications with given bandwidth and optical power requirements.
{"title":"Minimizing the Operating Current of Quantum Well Lasers with Modulation Bandwidth and Optical Power Requirements","authors":"M. McAdams, B. Zhao, T.R. Chen, J. Feng, A. Yariv","doi":"10.1364/slada.1995.ma.3","DOIUrl":"https://doi.org/10.1364/slada.1995.ma.3","url":null,"abstract":"When semiconductor lasers are used in optical telecommunication and optical interconnect applications, it is desirable to have as low an electrical power consumption as possible, i.e. a low operating current. However, if used in a high data transmission rate system, there may be a minimum requisite modulation bandwidth. In addition, signal-to-noise considerations often demand a minimum optical output power. While lowering the threshold current often improves the bandwidth and output power at a given operating current, it is not true that a laser optimized solely for the lowest threshold current will have the lowest operating current when biased to meet the requirements of a particular system. In this talk we discuss how the laser device parameters are optimized to produce the lowest operating current in applications with given bandwidth and optical power requirements.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127492166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tuc.5
P. Chazan, J. Ralston
Recent interest in high-power single-mode diode lasers has led to the evaluation of a variety of semiconductor amplifier geometries [1], integrated master oscillator power amplifier (MOPA), designs and flared oscillator devices. Flared amplifiers and oscillators have been found to be less sensitive to filamentation effects than broad area devices, although filamentation still ultimately limits the performance of such devices [2]. Using a FD-BPM model we investigate the performance to be expected from various flared laser structures in terms of both output power and beam quality. We clarify the influence of such material parameters as the number of quantum wells, the differential quantum efficiency and the linewidth enhancement factor on the output beam profile of the amplifier. We point out the influence of the linewidth enhancement factor showing that a reduction of this factor improves the output beam quality, the resistance to inhomogeneous injection, and the output farfield. Furthermore, a simulation of a 2D integrated elliptical lens is presented, showing the possibility of ‘on chip’ correction of the astigmatism for low α-factor structures. Such a lens would spare the use of an external cylindrical lens for collimation of the output signal.
{"title":"Beam Propagation Model of Tapered Amplifiers including Non-Linear Gain and Carrier Diffusion","authors":"P. Chazan, J. Ralston","doi":"10.1364/slada.1995.tuc.5","DOIUrl":"https://doi.org/10.1364/slada.1995.tuc.5","url":null,"abstract":"Recent interest in high-power single-mode diode lasers has led to the evaluation of a variety of semiconductor amplifier geometries [1], integrated master oscillator power amplifier (MOPA), designs and flared oscillator devices. Flared amplifiers and oscillators have been found to be less sensitive to filamentation effects than broad area devices, although filamentation still ultimately limits the performance of such devices [2]. Using a FD-BPM model we investigate the performance to be expected from various flared laser structures in terms of both output power and beam quality. We clarify the influence of such material parameters as the number of quantum wells, the differential quantum efficiency and the linewidth enhancement factor on the output beam profile of the amplifier. We point out the influence of the linewidth enhancement factor showing that a reduction of this factor improves the output beam quality, the resistance to inhomogeneous injection, and the output farfield. Furthermore, a simulation of a 2D integrated elliptical lens is presented, showing the possibility of ‘on chip’ correction of the astigmatism for low α-factor structures. Such a lens would spare the use of an external cylindrical lens for collimation of the output signal.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125533240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tud.2
M. Fisher, Y.-Z. Huang, A. J. Dann, D. Elton, M. Harlow, S. Perrin, J. Reed, I. Reid, H. Wickes, M. Adams
VCSELs emitting in the 1.3 and 1.55 μm regions could be particularly useful as low cost sources for optical fibre telecommunications applications because mode-matched devices can be coupled to single-mode fibres with high efficiency and good alignment tolerance. The absence of cleaved facets also permits on-wafer characterisation of devices.
{"title":"1.5 μm Vertical-Cavity Surface-Emitting Lasers","authors":"M. Fisher, Y.-Z. Huang, A. J. Dann, D. Elton, M. Harlow, S. Perrin, J. Reed, I. Reid, H. Wickes, M. Adams","doi":"10.1364/slada.1995.tud.2","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.2","url":null,"abstract":"VCSELs emitting in the 1.3 and 1.55 μm regions could be particularly useful as low cost sources for optical fibre telecommunications applications because mode-matched devices can be coupled to single-mode fibres with high efficiency and good alignment tolerance. The absence of cleaved facets also permits on-wafer characterisation of devices.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117249463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.15
P. Spencer, I. Middlemast, R. Balasubramanyam, J. Sarma, K. Shore
A single stripe semiconductor laser typically produces about 10mW of output power. This figure can be increased to about 50-60 mW by using some complicated fabrications techniques, but the goal of achieving higher powers and maintaining single mode operation has proved elusive. When the drive current to a single stripe laser is increased two effects may occur to limit the output power: the inversion population starts to saturate, and Catastrophic Optical Damage, (COD), starts to destroy the facets. Several approaches to these problems have been tried, eg., increased active area, and laser arrays, and have generally been found to be unsatisfactory. Increasing the active area does indeed result in increased output power but at the expense of the far-field pattern; and, unfortunately, increasing the active area generally leads to multi-mode operation, and hence a poor far-field.
{"title":"Analysis of Segmented Tapered Rib-Waveguide Semiconductor Optical Amplifiers","authors":"P. Spencer, I. Middlemast, R. Balasubramanyam, J. Sarma, K. Shore","doi":"10.1364/slada.1995.tue.15","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.15","url":null,"abstract":"A single stripe semiconductor laser typically produces about 10mW of output power. This figure can be increased to about 50-60 mW by using some complicated fabrications techniques, but the goal of achieving higher powers and maintaining single mode operation has proved elusive. When the drive current to a single stripe laser is increased two effects may occur to limit the output power: the inversion population starts to saturate, and Catastrophic Optical Damage, (COD), starts to destroy the facets. Several approaches to these problems have been tried, eg., increased active area, and laser arrays, and have generally been found to be unsatisfactory. Increasing the active area does indeed result in increased output power but at the expense of the far-field pattern; and, unfortunately, increasing the active area generally leads to multi-mode operation, and hence a poor far-field.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127070548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tuc.6
Z. Dai, R. Michalzik, P. Unger
To design an optimized high-power semiconductor traveling wave amplifier (TWA), it is important to study the parameter dependencies of a TWA on its waveguide structure, material properties, and operating conditions. Since the degradation of the output beam profile in a broad-stripe TWA is often observed in practice, two-dimensional models employing the beam propagation method (BPM) and the effective index method have been widely used [1-2]. These models are usually based on a linearization of basic material properties. For high-power TWAs, the operating current is several times larger than the threshold current of a corresponding laser diode. Linear approximations are under these conditions no longer valid. In this paper, we consider nonlinear material properties in a self-consistent BPM model. Nonlinear gain and residual facet reflectivities are found to greatly influence the operating characteristics of the devices.
{"title":"Operating Characteristic Simulation of High-Power Broad-Stripe Quantum-Well Semiconductor Traveling Wave Amplifiers","authors":"Z. Dai, R. Michalzik, P. Unger","doi":"10.1364/slada.1995.tuc.6","DOIUrl":"https://doi.org/10.1364/slada.1995.tuc.6","url":null,"abstract":"To design an optimized high-power semiconductor traveling wave amplifier (TWA), it is important to study the parameter dependencies of a TWA on its waveguide structure, material properties, and operating conditions. Since the degradation of the output beam profile in a broad-stripe TWA is often observed in practice, two-dimensional models employing the beam propagation method (BPM) and the effective index method have been widely used [1-2]. These models are usually based on a linearization of basic material properties. For high-power TWAs, the operating current is several times larger than the threshold current of a corresponding laser diode. Linear approximations are under these conditions no longer valid. In this paper, we consider nonlinear material properties in a self-consistent BPM model. Nonlinear gain and residual facet reflectivities are found to greatly influence the operating characteristics of the devices.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125692109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.16
Yuanjian Xu, A. Shakouri, A. Yariv
There has been great interest in studying optical and transport properties of multiple quantum well (MQW) structures. In these “artificial molecules”, energy quantization and the wave nature of the carriers have been used to design new devices, e.g., intersubband lasers. The understanding of carrier transport in MQWs is important for the design of lasers with high modulation speed. In this talk, we report on a new observation of a quantum interference effect in the photocurrent spectrum of weakly coupled bound-to-continuum MQWs. Using this effect, we analyze the electric field domain (EFD) formation in the superlattice [1].
{"title":"Quantum Interference Effect and Electric Field Domains in Multiple Quantum Well Structures","authors":"Yuanjian Xu, A. Shakouri, A. Yariv","doi":"10.1364/slada.1995.tue.16","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.16","url":null,"abstract":"There has been great interest in studying optical and transport properties of multiple quantum well (MQW) structures. In these “artificial molecules”, energy quantization and the wave nature of the carriers have been used to design new devices, e.g., intersubband lasers. The understanding of carrier transport in MQWs is important for the design of lasers with high modulation speed. In this talk, we report on a new observation of a quantum interference effect in the photocurrent spectrum of weakly coupled bound-to-continuum MQWs. Using this effect, we analyze the electric field domain (EFD) formation in the superlattice [1].","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123728445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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