Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.4
W. Hsin
Most of the published papers on the above-threshold simulation for DFB lasers utilize the powerful transfer matrix method (TMM) to include the longitudinal variations of the carrier and photon profiles caused by spatial hole burning and gain saturation effects at high output power[1]-[7]. However the approaches used to calculate the above-threshold behaviors were not correct. The most general mistakes are: (i). The use of the wrong threshold condition for the lasing mode both at and above threshold[2]- [5],[7] (ii). The iteration algorithm used to solve the above-threshold behavior for higher order DFB modes did not include the influence of the lasing mode properly[1],[2],[4],[5],[7].
{"title":"A Correct Way to Model Arbitrary Complex Distributed FeedBack (DFB) Lasers in The Above Threshold Regime","authors":"W. Hsin","doi":"10.1364/slada.1995.tue.4","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.4","url":null,"abstract":"Most of the published papers on the above-threshold simulation for DFB lasers utilize the powerful transfer matrix method (TMM) to include the longitudinal variations of the carrier and photon profiles caused by spatial hole burning and gain saturation effects at high output power[1]-[7]. However the approaches used to calculate the above-threshold behaviors were not correct. The most general mistakes are: (i). The use of the wrong threshold condition for the lasing mode both at and above threshold[2]- [5],[7] (ii). The iteration algorithm used to solve the above-threshold behavior for higher order DFB modes did not include the influence of the lasing mode properly[1],[2],[4],[5],[7].","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"24 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114093198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tud.8
Yong Cheng, G. Yang, P. Dapkus
High performance folded-cavity surface emitting lasers (FCSEL's) utilizing 45° deflection mirrors to couple the light in the horizontal cavity towards the surface are attractive devices for applications to optoelectronic integrated circuits. We report here low threshold current and high efficiency InGaAs/GaAs FCSEL's that employ high quality internal 45° deflectors. A simplified process involving a stop etch to position the surface emitting output mirror close to the waveguide and ion-beam-etching (IBE) to form the 45° deflecting mirror is presented.
{"title":"High-performance folded-cavity surface-emitting InGaAs/GaAs lasers fabricated by ion-beam-etching technique","authors":"Yong Cheng, G. Yang, P. Dapkus","doi":"10.1364/slada.1995.tud.8","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.8","url":null,"abstract":"High performance folded-cavity surface emitting lasers (FCSEL's) utilizing 45° deflection mirrors to couple the light in the horizontal cavity towards the surface are attractive devices for applications to optoelectronic integrated circuits. We report here low threshold current and high efficiency InGaAs/GaAs FCSEL's that employ high quality internal 45° deflectors. A simplified process involving a stop etch to position the surface emitting output mirror close to the waveguide and ion-beam-etching (IBE) to form the 45° deflecting mirror is presented.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130548229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Yamada, M. Tachikawa, T. Sasaki, H. Mori, Y. Kadota, S. Matsumoto, K. Kishi
Opto-electronic integrated circuits (OEICs), especially photonic devices on Si, are attractive because of their potential to combine photonic functions with highly integrated silicon electronic circuits. We have already demonstrated long term cw operation of a 1.5-μm multiple quantum well laser1) and high-temperature cw operation of a 1.3-μm double heterostructure (DH) laser2) heteroepitaxially grown on Si. Low threshold current lasers are required to reduce the power consumption of OEICs. An effective approach to reduce the threshold current is burying lasers with semi-insulating InP. The semi-insulating buried structure is also indispensable to reduce parasitic capacitance for high-frequency operation. Though a semi-insulating InP layer has been successfully grown on a Si substrate,3) there are no reports on its application to devices on Si.
{"title":"An Fe-InP buried 1.3-μm double heterostructure laser heteroepitaxially grown on Si","authors":"T. Yamada, M. Tachikawa, T. Sasaki, H. Mori, Y. Kadota, S. Matsumoto, K. Kishi","doi":"10.1364/slada.1995.wa.5","DOIUrl":"https://doi.org/10.1364/slada.1995.wa.5","url":null,"abstract":"Opto-electronic integrated circuits (OEICs), especially photonic devices on Si, are attractive because of their potential to combine photonic functions with highly integrated silicon electronic circuits. We have already demonstrated long term cw operation of a 1.5-μm multiple quantum well laser1) and high-temperature cw operation of a 1.3-μm double heterostructure (DH) laser2) heteroepitaxially grown on Si. Low threshold current lasers are required to reduce the power consumption of OEICs. An effective approach to reduce the threshold current is burying lasers with semi-insulating InP. The semi-insulating buried structure is also indispensable to reduce parasitic capacitance for high-frequency operation. Though a semi-insulating InP layer has been successfully grown on a Si substrate,3) there are no reports on its application to devices on Si.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130894335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.pdp.1
P. Eliseev, M. Osiński
The material parameters of GaN active medium are reviewed and specified for the numerical modeling of both edge- and surface-emitting laser devices. Calculations are presented for the oscillation strength, recombination coefficients, quantum yield and modal gain in GaN/GaAlN heterostructure. Threshold currents below 10 kA/cm2 at room temperature are predicted in optimized diode structures.
{"title":"Modeling Considerations for UV Diode Lasers Based on GaN","authors":"P. Eliseev, M. Osiński","doi":"10.1364/slada.1995.pdp.1","DOIUrl":"https://doi.org/10.1364/slada.1995.pdp.1","url":null,"abstract":"The material parameters of GaN active medium are reviewed and specified for the numerical modeling of both edge- and surface-emitting laser devices. Calculations are presented for the oscillation strength, recombination coefficients, quantum yield and modal gain in GaN/GaAlN heterostructure. Threshold currents below 10 kA/cm2 at room temperature are predicted in optimized diode structures.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134069661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
When semiconductor lasers are used in optical telecommunication and optical interconnect applications, it is desirable to have as low an electrical power consumption as possible, i.e. a low operating current. However, if used in a high data transmission rate system, there may be a minimum requisite modulation bandwidth. In addition, signal-to-noise considerations often demand a minimum optical output power. While lowering the threshold current often improves the bandwidth and output power at a given operating current, it is not true that a laser optimized solely for the lowest threshold current will have the lowest operating current when biased to meet the requirements of a particular system. In this talk we discuss how the laser device parameters are optimized to produce the lowest operating current in applications with given bandwidth and optical power requirements.
{"title":"Minimizing the Operating Current of Quantum Well Lasers with Modulation Bandwidth and Optical Power Requirements","authors":"M. McAdams, B. Zhao, T.R. Chen, J. Feng, A. Yariv","doi":"10.1364/slada.1995.ma.3","DOIUrl":"https://doi.org/10.1364/slada.1995.ma.3","url":null,"abstract":"When semiconductor lasers are used in optical telecommunication and optical interconnect applications, it is desirable to have as low an electrical power consumption as possible, i.e. a low operating current. However, if used in a high data transmission rate system, there may be a minimum requisite modulation bandwidth. In addition, signal-to-noise considerations often demand a minimum optical output power. While lowering the threshold current often improves the bandwidth and output power at a given operating current, it is not true that a laser optimized solely for the lowest threshold current will have the lowest operating current when biased to meet the requirements of a particular system. In this talk we discuss how the laser device parameters are optimized to produce the lowest operating current in applications with given bandwidth and optical power requirements.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127492166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ecological concerns and time and cost saving measures have started a trend towards dry-processed, high quality image recording media for digital medical and graphic arts imaging applications. As compared to silver-halide film based systems, the photosensitive layers in most of these media are considerably less sensitive than traditional wet-processed film and therefore require a high laser power for exposure. In addition, advanced screening methods, like FM or stochastic screening, require an extremely well controlled laser spot size. The most recent developments in the graphic arts industry are directed towards eliminating film as an intermediate step for plate-making altogether and instead writing the image (comprising text, line art and pictures) directly onto plates. What these technological developments have in common is that, independent of the specific method for implementation, they all rely on various high power laser sources with extremely well controlled beam properties for writing the image. This talk will address the present status of laser requirements for non-silver-halide-based medical and graphic arts printing, as well as impending industry-wide technological changes and the resulting “wish list” for advanced laser sources.
{"title":"High power lasers for medical and graphic arts printing applications","authors":"W. Stutius, L. Heath","doi":"10.1364/slada.1995.mc.1","DOIUrl":"https://doi.org/10.1364/slada.1995.mc.1","url":null,"abstract":"Ecological concerns and time and cost saving measures have started a trend towards dry-processed, high quality image recording media for digital medical and graphic arts imaging applications. As compared to silver-halide film based systems, the photosensitive layers in most of these media are considerably less sensitive than traditional wet-processed film and therefore require a high laser power for exposure. In addition, advanced screening methods, like FM or stochastic screening, require an extremely well controlled laser spot size. The most recent developments in the graphic arts industry are directed towards eliminating film as an intermediate step for plate-making altogether and instead writing the image (comprising text, line art and pictures) directly onto plates. What these technological developments have in common is that, independent of the specific method for implementation, they all rely on various high power laser sources with extremely well controlled beam properties for writing the image. This talk will address the present status of laser requirements for non-silver-halide-based medical and graphic arts printing, as well as impending industry-wide technological changes and the resulting “wish list” for advanced laser sources.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"274 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124433254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An uncooled laser transmitter is cheaper and more reliable than a thermo-electrically cooled laser transmitter because of its simplicity in packaging. A low-cost, highly-reliable uncooled laser may have a strong influence on pushing fiber deployment closer to the home. For loop applications, the laser transmitter must operate reliably over the temperature range from -40 to 85°C. It is rather difficult to make high performance uncooled lasers in the long wavelength region (1.3-1.55 μm) using the conventional GaxIn1-xASyP1-y/InP materials system because the laser temperature performance suffers from Auger recombination in the low bandgap material and poor electron confinement resulting from the small conduction band offset (ΔEc=0.4ΔEg). We will discuss the design of uncooled lasers to minimize the changes in both threshold current and slope efficiency over the temperature range from -40 to 85 °C. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the AlxGayIn1-x-yAs/InP materials system instead of the conventional GaxIn1-xASyP1-y/InP materials system. Experimental results of the AlxGayIn1-x-yAs/InP strained quantum well lasers show superior high temperature performances as discussed below.
{"title":"High Temperature Uncooled Lasers","authors":"C. Zah, R. Bhat, T. Lee","doi":"10.1364/slada.1995.wa.2","DOIUrl":"https://doi.org/10.1364/slada.1995.wa.2","url":null,"abstract":"An uncooled laser transmitter is cheaper and more reliable than a\u0000 thermo-electrically cooled laser transmitter because of its simplicity\u0000 in packaging. A low-cost, highly-reliable uncooled laser may have a\u0000 strong influence on pushing fiber deployment closer to the home. For\u0000 loop applications, the laser transmitter must operate reliably over\u0000 the temperature range from -40 to 85°C. It is rather difficult to make\u0000 high performance uncooled lasers in the long wavelength region\u0000 (1.3-1.55 μm) using the conventional\u0000 GaxIn1-xASyP1-y/InP\u0000 materials system because the laser temperature performance suffers\u0000 from Auger recombination in the low bandgap material and poor electron\u0000 confinement resulting from the small conduction band offset\u0000 (ΔEc=0.4ΔEg). We will discuss the design of\u0000 uncooled lasers to minimize the changes in both threshold current and\u0000 slope efficiency over the temperature range from -40 to 85 °C. To\u0000 prevent carrier overflow under high-temperature operation, the\u0000 electron confinement energy is increased by using the\u0000 AlxGayIn1-x-yAs/InP materials system\u0000 instead of the conventional\u0000 GaxIn1-xASyP1-y/InP\u0000 materials system. Experimental results of the\u0000 AlxGayIn1-x-yAs/InP strained quantum\u0000 well lasers show superior high temperature performances as discussed\u0000 below.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130688344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tud.2
M. Fisher, Y.-Z. Huang, A. J. Dann, D. Elton, M. Harlow, S. Perrin, J. Reed, I. Reid, H. Wickes, M. Adams
VCSELs emitting in the 1.3 and 1.55 μm regions could be particularly useful as low cost sources for optical fibre telecommunications applications because mode-matched devices can be coupled to single-mode fibres with high efficiency and good alignment tolerance. The absence of cleaved facets also permits on-wafer characterisation of devices.
{"title":"1.5 μm Vertical-Cavity Surface-Emitting Lasers","authors":"M. Fisher, Y.-Z. Huang, A. J. Dann, D. Elton, M. Harlow, S. Perrin, J. Reed, I. Reid, H. Wickes, M. Adams","doi":"10.1364/slada.1995.tud.2","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.2","url":null,"abstract":"VCSELs emitting in the 1.3 and 1.55 μm regions could be particularly useful as low cost sources for optical fibre telecommunications applications because mode-matched devices can be coupled to single-mode fibres with high efficiency and good alignment tolerance. The absence of cleaved facets also permits on-wafer characterisation of devices.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117249463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.16
Yuanjian Xu, A. Shakouri, A. Yariv
There has been great interest in studying optical and transport properties of multiple quantum well (MQW) structures. In these “artificial molecules”, energy quantization and the wave nature of the carriers have been used to design new devices, e.g., intersubband lasers. The understanding of carrier transport in MQWs is important for the design of lasers with high modulation speed. In this talk, we report on a new observation of a quantum interference effect in the photocurrent spectrum of weakly coupled bound-to-continuum MQWs. Using this effect, we analyze the electric field domain (EFD) formation in the superlattice [1].
{"title":"Quantum Interference Effect and Electric Field Domains in Multiple Quantum Well Structures","authors":"Yuanjian Xu, A. Shakouri, A. Yariv","doi":"10.1364/slada.1995.tue.16","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.16","url":null,"abstract":"There has been great interest in studying optical and transport properties of multiple quantum well (MQW) structures. In these “artificial molecules”, energy quantization and the wave nature of the carriers have been used to design new devices, e.g., intersubband lasers. The understanding of carrier transport in MQWs is important for the design of lasers with high modulation speed. In this talk, we report on a new observation of a quantum interference effect in the photocurrent spectrum of weakly coupled bound-to-continuum MQWs. Using this effect, we analyze the electric field domain (EFD) formation in the superlattice [1].","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123728445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tue.15
P. Spencer, I. Middlemast, R. Balasubramanyam, J. Sarma, K. Shore
A single stripe semiconductor laser typically produces about 10mW of output power. This figure can be increased to about 50-60 mW by using some complicated fabrications techniques, but the goal of achieving higher powers and maintaining single mode operation has proved elusive. When the drive current to a single stripe laser is increased two effects may occur to limit the output power: the inversion population starts to saturate, and Catastrophic Optical Damage, (COD), starts to destroy the facets. Several approaches to these problems have been tried, eg., increased active area, and laser arrays, and have generally been found to be unsatisfactory. Increasing the active area does indeed result in increased output power but at the expense of the far-field pattern; and, unfortunately, increasing the active area generally leads to multi-mode operation, and hence a poor far-field.
{"title":"Analysis of Segmented Tapered Rib-Waveguide Semiconductor Optical Amplifiers","authors":"P. Spencer, I. Middlemast, R. Balasubramanyam, J. Sarma, K. Shore","doi":"10.1364/slada.1995.tue.15","DOIUrl":"https://doi.org/10.1364/slada.1995.tue.15","url":null,"abstract":"A single stripe semiconductor laser typically produces about 10mW of output power. This figure can be increased to about 50-60 mW by using some complicated fabrications techniques, but the goal of achieving higher powers and maintaining single mode operation has proved elusive. When the drive current to a single stripe laser is increased two effects may occur to limit the output power: the inversion population starts to saturate, and Catastrophic Optical Damage, (COD), starts to destroy the facets. Several approaches to these problems have been tried, eg., increased active area, and laser arrays, and have generally been found to be unsatisfactory. Increasing the active area does indeed result in increased output power but at the expense of the far-field pattern; and, unfortunately, increasing the active area generally leads to multi-mode operation, and hence a poor far-field.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127070548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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