Pub Date : 2013-12-02DOI: 10.1109/THERMINIC.2013.6675186
F. Maggioni, H. Oprins, E. Beyne, I. De Wolf, T. Baelmans
Thermal analysis is essential in 3D-IC technology due to the reduced footprint and higher power densities compared to conventional 2D packaging [1]. Compact thermal models (CTM) are being developed for fast evaluation of the thermal distribution in the 3D packages. The CTM discussed in this paper is based on the Green's function theory and exploits convolution and fast Fourier transform to compute the temperature profiles starting from matrices storing the power dissipation densities (power maps) and the temperature responses to hot spots. Detailed accuracy assessments are presented for the grid size and for the number of images to be considered for an accurate modelling of the lateral insulating boundary conditions. A two dies stack case study is also analysed showing good agreement with the finite element model results (error less than 0.5%). Finally, the algorithm computational time is discussed indicating a O(N logN) behaviour where N is the number of elements in the matrices.
{"title":"Convolution based compact thermal model for 3D-ICs: Methodology and accuracy analysis","authors":"F. Maggioni, H. Oprins, E. Beyne, I. De Wolf, T. Baelmans","doi":"10.1109/THERMINIC.2013.6675186","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675186","url":null,"abstract":"Thermal analysis is essential in 3D-IC technology due to the reduced footprint and higher power densities compared to conventional 2D packaging [1]. Compact thermal models (CTM) are being developed for fast evaluation of the thermal distribution in the 3D packages. The CTM discussed in this paper is based on the Green's function theory and exploits convolution and fast Fourier transform to compute the temperature profiles starting from matrices storing the power dissipation densities (power maps) and the temperature responses to hot spots. Detailed accuracy assessments are presented for the grid size and for the number of images to be considered for an accurate modelling of the lateral insulating boundary conditions. A two dies stack case study is also analysed showing good agreement with the finite element model results (error less than 0.5%). Finally, the algorithm computational time is discussed indicating a O(N logN) behaviour where N is the number of elements in the matrices.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134207522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-02DOI: 10.1109/THERMINIC.2013.6675203
M. Janicki, T. Torzewicz, A. Vass-Várnai, A. Napieralski
This paper investigates the influence of nonlinearities in boundary conditions on thermal transients as well as their impact on the values of electronic system compact thermal model elements. The discussions in the paper are based on practical examples where thermal responses of a power device are recorded in various boundary conditions for different values of dissipated power. Then, the measurement results are analyzed using the Network Identification by Deconvolution method and the differences between particular cases are discussed in detail. The presented experimental results clearly show that the nonlinearities due to the temperature dependence of boundary conditions do have important influence on all the values of compact thermal model elements. This might suggest that in some practical cases nonlinear system identification methods should be used.
{"title":"Impact of nonlinearities in boundary conditions on device compact thermal models","authors":"M. Janicki, T. Torzewicz, A. Vass-Várnai, A. Napieralski","doi":"10.1109/THERMINIC.2013.6675203","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675203","url":null,"abstract":"This paper investigates the influence of nonlinearities in boundary conditions on thermal transients as well as their impact on the values of electronic system compact thermal model elements. The discussions in the paper are based on practical examples where thermal responses of a power device are recorded in various boundary conditions for different values of dissipated power. Then, the measurement results are analyzed using the Network Identification by Deconvolution method and the differences between particular cases are discussed in detail. The presented experimental results clearly show that the nonlinearities due to the temperature dependence of boundary conditions do have important influence on all the values of compact thermal model elements. This might suggest that in some practical cases nonlinear system identification methods should be used.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134590282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-02DOI: 10.1109/THERMINIC.2013.6675212
B. Plesz, S. Ress
This paper investigates the thermal behaviour of thin crystalline silicon solar cells and determines whether the decrease in cell thickness affects the temperature dependences of the solar cell parameters. For the investigation crystalline solar cells with different photoactive layer thicknesses were processed. Sample cells were formed on n+-substrate wafers with n epitaxial layers where due to the low minority carrier lifetime in the n+-substrate only the epitaxial layer participates effectively in the photocurrent generation. The thin photoactive layers were achieved by the etching of the epitaxial layer. On the samples I-V curves and spectral response functions were measured at different temperatures, and the temperature dependence the solar cell parameters were determined. Most of the parameters showed no differences in their temperature behaviour, but the temperature dependence of the short circuit current and the fill factor differed on all sample cells. From the results it can be concluded, that decreasing the thickness of the solar cells will have practically no effect on the temperature dependence of the performance and the efficiency of crystalline silicon solar cells. However the dependence of in the temperature coefficients for the short circuit currents on the thickness of the photoactive layer could be of interest in sensor applications, e.g. for the thermal compensation of light sensors.
{"title":"Investigation of the thermal behaviour of thin crystalline silicon solar cells","authors":"B. Plesz, S. Ress","doi":"10.1109/THERMINIC.2013.6675212","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675212","url":null,"abstract":"This paper investigates the thermal behaviour of thin crystalline silicon solar cells and determines whether the decrease in cell thickness affects the temperature dependences of the solar cell parameters. For the investigation crystalline solar cells with different photoactive layer thicknesses were processed. Sample cells were formed on n+-substrate wafers with n epitaxial layers where due to the low minority carrier lifetime in the n+-substrate only the epitaxial layer participates effectively in the photocurrent generation. The thin photoactive layers were achieved by the etching of the epitaxial layer. On the samples I-V curves and spectral response functions were measured at different temperatures, and the temperature dependence the solar cell parameters were determined. Most of the parameters showed no differences in their temperature behaviour, but the temperature dependence of the short circuit current and the fill factor differed on all sample cells. From the results it can be concluded, that decreasing the thickness of the solar cells will have practically no effect on the temperature dependence of the performance and the efficiency of crystalline silicon solar cells. However the dependence of in the temperature coefficients for the short circuit currents on the thickness of the photoactive layer could be of interest in sensor applications, e.g. for the thermal compensation of light sensors.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129870852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-02DOI: 10.1109/THERMINIC.2013.6675179
T. Nowak, M. Muller, H. Walter, O. Holck, F. Wust, O. Wittler, K. Lang
In battery packs it is important to know, which temperature the cells have, to avoid overloads and damages. A temperature sensor, which is joined on the battery cell, delivers such data. To guarantee exact temperature measurements on the cell, reliable Thermal Interface Materials (TIM) are needed. They ensure heat transfer from battery cell to the sensor and need to provide good thermal conductivity, moisture independence and adhesion performance under combined environmental loads. For these requirements three different TIM materials were tested and analyzed to determine defects and observing degradation processes under cyclic temperature and moisture loads. Also on focus are the selection guidelines of the correct TIM for different application. The paper describes the characterization of different TIMs, new thermal test cycles combined with moisture and the resulting effects on degradation behavior of TIMs.
{"title":"Approach for reliability of Thermal Interface Materials in battery cell sensors","authors":"T. Nowak, M. Muller, H. Walter, O. Holck, F. Wust, O. Wittler, K. Lang","doi":"10.1109/THERMINIC.2013.6675179","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675179","url":null,"abstract":"In battery packs it is important to know, which temperature the cells have, to avoid overloads and damages. A temperature sensor, which is joined on the battery cell, delivers such data. To guarantee exact temperature measurements on the cell, reliable Thermal Interface Materials (TIM) are needed. They ensure heat transfer from battery cell to the sensor and need to provide good thermal conductivity, moisture independence and adhesion performance under combined environmental loads. For these requirements three different TIM materials were tested and analyzed to determine defects and observing degradation processes under cyclic temperature and moisture loads. Also on focus are the selection guidelines of the correct TIM for different application. The paper describes the characterization of different TIMs, new thermal test cycles combined with moisture and the resulting effects on degradation behavior of TIMs.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117259965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-02DOI: 10.1109/THERMINIC.2013.6675220
L. Codecasa
In this paper a novel approach is proposed for generating dynamic compact models of nonlinear heat diffusion problems for electronics components. The method is very efficient and leads to accurate approximations of the space-time distribution of temperature rise within the component for all waveforms of the injected powers.
{"title":"Novel approach to compact modeling for nonlinear thermal conduction problems","authors":"L. Codecasa","doi":"10.1109/THERMINIC.2013.6675220","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675220","url":null,"abstract":"In this paper a novel approach is proposed for generating dynamic compact models of nonlinear heat diffusion problems for electronics components. The method is very efficient and leads to accurate approximations of the space-time distribution of temperature rise within the component for all waveforms of the injected powers.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114358773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-02DOI: 10.1109/THERMINIC.2013.6675208
Thomas Dannerbauer, T. Zahner
As junction-to-case thermal resistance RthJC is a primary performance and reliability parameter for high power Light Emitting Diodes (LED) an accurate specification of this value is of paramount importance. Currently thermal transient characterization methods are reserved to research and quality laboratories. Especially the thermal calibration procedure requires an enormous effort of time. Therefore the RthJC specification of a high volume production is based on a statistical approach. However, high test coverage or even a single unit test is desired. This paper presents a method for inline Rth control for high power LEDs. By skipping the conventional thermal calibration procedure the method compares the measured response of the device under test with a completely thermal characterized reference curve of a reference device. It enables to detect variations in thermal interface materials, e.g. failures in the thermal adhesive attach, with sufficient accuracy within some hundred milliseconds testing time. The achieved measurement results verify the applicability of inline Rth control in a high volume production.
{"title":"Inline Rth control: Fast thermal transient evaluation for high power LEDs","authors":"Thomas Dannerbauer, T. Zahner","doi":"10.1109/THERMINIC.2013.6675208","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675208","url":null,"abstract":"As junction-to-case thermal resistance RthJC is a primary performance and reliability parameter for high power Light Emitting Diodes (LED) an accurate specification of this value is of paramount importance. Currently thermal transient characterization methods are reserved to research and quality laboratories. Especially the thermal calibration procedure requires an enormous effort of time. Therefore the RthJC specification of a high volume production is based on a statistical approach. However, high test coverage or even a single unit test is desired. This paper presents a method for inline Rth control for high power LEDs. By skipping the conventional thermal calibration procedure the method compares the measured response of the device under test with a completely thermal characterized reference curve of a reference device. It enables to detect variations in thermal interface materials, e.g. failures in the thermal adhesive attach, with sufficient accuracy within some hundred milliseconds testing time. The achieved measurement results verify the applicability of inline Rth control in a high volume production.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"20 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132530843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-02DOI: 10.1109/THERMINIC.2013.6675185
Liang Xu, D. Jiang, Yifeng Fu, S. Tu, Johan Liu
In this paper, we present a new approach of controlling the growth density of carbon nanotubes (CNTs) by controlling the thickness of Cu underlayer. Tested thicknesses of Cu range from 5nm to 150nm. In this work, we have tried two kinds of barrier layer material, namely Mo and Al2O3 against the diffusion of Ni catalysts. The results suggest Al2O3 is a better barrier layer material and more suitable than Mo to be applied with Cu underlayer for the controlling of growth density of CNTs. In the end, this paper also gives a tentative explanation of this new method of controlling CNT growth density by adjusting the thickness of Cu underlayer.
{"title":"Controlling the density of CNTs by different underlayer materials in PECVD growth","authors":"Liang Xu, D. Jiang, Yifeng Fu, S. Tu, Johan Liu","doi":"10.1109/THERMINIC.2013.6675185","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675185","url":null,"abstract":"In this paper, we present a new approach of controlling the growth density of carbon nanotubes (CNTs) by controlling the thickness of Cu underlayer. Tested thicknesses of Cu range from 5nm to 150nm. In this work, we have tried two kinds of barrier layer material, namely Mo and Al2O3 against the diffusion of Ni catalysts. The results suggest Al2O3 is a better barrier layer material and more suitable than Mo to be applied with Cu underlayer for the controlling of growth density of CNTs. In the end, this paper also gives a tentative explanation of this new method of controlling CNT growth density by adjusting the thickness of Cu underlayer.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115047251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/THERMINIC.2013.6675209
S. Noijen, S. Fritzsche, A. S. Klein, A. Poppe, G. Kums, O. van der Sluis
This paper reports on first results towards the development of a high power lighting demonstrator of the FP7 Nanotherm project. The demonstrator aims to show an optimized ROHS compliant interconnect solution. Hereto sintered materials are considered as alternative interconnect materials. Additionally, a heat spreader concept is evaluated as alternative for state-of-the-art IMS boards. This paper shows preliminary results for: - Transient thermal measurements of the reference system. - First trials of sintered past and adhesive used to mount LEDs on DCB substrates. - Thermal finite element simulations of the heatspreader concept compared to the IMS solution.
{"title":"Integrating advanced interconnect technologies in a high power lighting application: First steps","authors":"S. Noijen, S. Fritzsche, A. S. Klein, A. Poppe, G. Kums, O. van der Sluis","doi":"10.1109/THERMINIC.2013.6675209","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675209","url":null,"abstract":"This paper reports on first results towards the development of a high power lighting demonstrator of the FP7 Nanotherm project. The demonstrator aims to show an optimized ROHS compliant interconnect solution. Hereto sintered materials are considered as alternative interconnect materials. Additionally, a heat spreader concept is evaluated as alternative for state-of-the-art IMS boards. This paper shows preliminary results for: - Transient thermal measurements of the reference system. - First trials of sintered past and adhesive used to mount LEDs on DCB substrates. - Thermal finite element simulations of the heatspreader concept compared to the IMS solution.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130525692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/THERMINIC.2013.6675213
M. Garci, J. Kammerer, L. Hébrard
An electro-thermal compact model of MOSFET which takes the hot carriers effects into account is presented in this paper. This new compact model evaluates the threshold voltage shift as well as the mobility reduction induced by the increase of the density of states at the Si/SiO2 interface produced by hot carriers. This physical effect depends on the biasing conditions and the temperature of the device. Results obtained on a single transistor are presented and compared to experimental results. Electro-thermal simulations at chip level are presented through a circuit dedicated to effective aging evaluation. Simulation results clearly show how the temperature reduces the lifetime of circuits. This new electro-thermal compact model coupled to our electro-thermal simulation tool offers the possibility to evaluate the lifetime of analog CMOS circuit.
{"title":"Lifetime of CMOS circuits evaluation by means of electro-thermal simulations","authors":"M. Garci, J. Kammerer, L. Hébrard","doi":"10.1109/THERMINIC.2013.6675213","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675213","url":null,"abstract":"An electro-thermal compact model of MOSFET which takes the hot carriers effects into account is presented in this paper. This new compact model evaluates the threshold voltage shift as well as the mobility reduction induced by the increase of the density of states at the Si/SiO2 interface produced by hot carriers. This physical effect depends on the biasing conditions and the temperature of the device. Results obtained on a single transistor are presented and compared to experimental results. Electro-thermal simulations at chip level are presented through a circuit dedicated to effective aging evaluation. Simulation results clearly show how the temperature reduces the lifetime of circuits. This new electro-thermal compact model coupled to our electro-thermal simulation tool offers the possibility to evaluate the lifetime of analog CMOS circuit.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128885702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/THERMINIC.2013.6675223
Ferenc Bíró, C. Ducso, Z. Hajnal, A. Pap, I. Bársony
This work describes the results of a systematic investigation of micro-hotplates on thin isolating membranes capable of operation up to 600 °C both in static and dynamic mode. For the selection of optimum device geometry and the layer structure alternatives FEM analysis was applied. The materials considered were Si3N4, SiO2, TiO2/Pt, Al2O3 and their combination in various multilayer structures. To reduce the chip size DRIE was selected for the release of the membrane. Experimental characterization of the hotplates was carried out by various techniques; the average hotplate temperature was deduced from the resistance of the applied Pt heater and verified by micro-melting point measurements. Buckling of the membranes was tested by means of optical methods and the cumulative stress of the multilayer structure quantified by Makyoh-topography. Pulsed mode cyclic heating revealed the dynamic properties and also served for accelerated stability tests. For demonstration microheater devices with heat dissipation up to 23 °C/mW and t90 <; 3ms were constructed to form the basis of combustive type gas sensors operated at elevated temperature.
{"title":"Optimisation of low dissipation micro-hotplates - Thermo-mechanical design and characterisation","authors":"Ferenc Bíró, C. Ducso, Z. Hajnal, A. Pap, I. Bársony","doi":"10.1109/THERMINIC.2013.6675223","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675223","url":null,"abstract":"This work describes the results of a systematic investigation of micro-hotplates on thin isolating membranes capable of operation up to 600 °C both in static and dynamic mode. For the selection of optimum device geometry and the layer structure alternatives FEM analysis was applied. The materials considered were Si3N4, SiO2, TiO2/Pt, Al2O3 and their combination in various multilayer structures. To reduce the chip size DRIE was selected for the release of the membrane. Experimental characterization of the hotplates was carried out by various techniques; the average hotplate temperature was deduced from the resistance of the applied Pt heater and verified by micro-melting point measurements. Buckling of the membranes was tested by means of optical methods and the cumulative stress of the multilayer structure quantified by Makyoh-topography. Pulsed mode cyclic heating revealed the dynamic properties and also served for accelerated stability tests. For demonstration microheater devices with heat dissipation up to 23 °C/mW and t90 <; 3ms were constructed to form the basis of combustive type gas sensors operated at elevated temperature.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132267581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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