Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362677
W. Fitch
The purpose of this investigation was to determine if there was a detrimental effect on internal bonded wires of ceramic dual-in-line and ceramic flat packages, which had been subjected to thermal cycling for up to 1000 cycles. Several manufacturers' parts were used - three ceramic dual-in-line packages (CDIP) and two flat packages. All parts were stressed to MIL-STD-883, Method 1010, Condition C (¿65°C. to +150°C) or Method 1011, Condition C. Samples were removed at various steps throughout the cycling program. All parts were decapped and wires pulled. Pull strength and failure locations were recorded. This investigation indicated that end-of-life due to temperature cycling, can be observed to start within 1000 cycles, but due to the slow mean degradation rate, the calculated mean cycles to failure is very large (>1018 cycles). Thermal shock cause much less degradation of the wire bond strengths than did temperature cycling at this condition C level. The results show that Method 1010-C does cause slight degradation in mean pull strength, almost no degradation in maximum value observed, and extensive degradation to lowest values observed. Zero wirepull strengths were obtained after 240 temperature cycles and "percent fail less than 0.5 gram-force" increases significantly with increasing cycles from 240 to 1000. The purpose of the second part of this investigation was to determine if there was a degradation in CERDIP sealing glass strength of parts subjected to 1000 cycles of MIL-STD-883, Method 1011, Condition A (0 - 100°C) Thermal Shock.
{"title":"The Degradation of Bonding Wires and Sealing Glasses with Extended Thermal Cycling","authors":"W. Fitch","doi":"10.1109/IRPS.1975.362677","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362677","url":null,"abstract":"The purpose of this investigation was to determine if there was a detrimental effect on internal bonded wires of ceramic dual-in-line and ceramic flat packages, which had been subjected to thermal cycling for up to 1000 cycles. Several manufacturers' parts were used - three ceramic dual-in-line packages (CDIP) and two flat packages. All parts were stressed to MIL-STD-883, Method 1010, Condition C (¿65°C. to +150°C) or Method 1011, Condition C. Samples were removed at various steps throughout the cycling program. All parts were decapped and wires pulled. Pull strength and failure locations were recorded. This investigation indicated that end-of-life due to temperature cycling, can be observed to start within 1000 cycles, but due to the slow mean degradation rate, the calculated mean cycles to failure is very large (>1018 cycles). Thermal shock cause much less degradation of the wire bond strengths than did temperature cycling at this condition C level. The results show that Method 1010-C does cause slight degradation in mean pull strength, almost no degradation in maximum value observed, and extensive degradation to lowest values observed. Zero wirepull strengths were obtained after 240 temperature cycles and \"percent fail less than 0.5 gram-force\" increases significantly with increasing cycles from 240 to 1000. The purpose of the second part of this investigation was to determine if there was a degradation in CERDIP sealing glass strength of parts subjected to 1000 cycles of MIL-STD-883, Method 1011, Condition A (0 - 100°C) Thermal Shock.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125140583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362691
T. M. Donnelly, W. W. Powell, J. Dobson, J. Devaney
Devices from two separate PROM manufacturers utilizing nichrome technology were subjected to variations in programming pulses to determine effects on the fusible links. After programming, devices were chemically etched and a Scanning Electron Microscope (SEM) analysis was conducted on the selectively programmed fuses. A rectangular pulse corresponding to the vendors programming specification was used to program the fuses. However, during programming the pulse amplitude was adjusted to simulate the effect of variations in energy levels delivered by the on-chip addressing circuitry to the fusible links. The amplitudes were adjusted to extend the time required for fusing to a range of 100 ¿s to several seconds. Under SEM examination, the appearance of the fused gaps could be correlated to the fusing time during programming. A description of experiments performed, along with SEM photographs-are presented.
{"title":"Effects of Programming Variations on Nichrome Link PROMS","authors":"T. M. Donnelly, W. W. Powell, J. Dobson, J. Devaney","doi":"10.1109/IRPS.1975.362691","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362691","url":null,"abstract":"Devices from two separate PROM manufacturers utilizing nichrome technology were subjected to variations in programming pulses to determine effects on the fusible links. After programming, devices were chemically etched and a Scanning Electron Microscope (SEM) analysis was conducted on the selectively programmed fuses. A rectangular pulse corresponding to the vendors programming specification was used to program the fuses. However, during programming the pulse amplitude was adjusted to simulate the effect of variations in energy levels delivered by the on-chip addressing circuitry to the fusible links. The amplitudes were adjusted to extend the time required for fusing to a range of 100 ¿s to several seconds. Under SEM examination, the appearance of the fused gaps could be correlated to the fusing time during programming. A description of experiments performed, along with SEM photographs-are presented.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"272 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115902594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362700
C. Lane
Resistors: A review of resistor systems, and the processes used to deposit and delineate them, is given. Effects of mechanical, thermal, chemical and electrical stresses are discussed as they relate to accuracy and stability. Failure mechanisms are reviewed. Triming techniques are explored and design limits for the various systems discussed. Parameters of interest such as frequency response, temperature coefficient, voltage coefficient and noise are compared for the various systems. Finally, quality control and screening techniques are discussed as they relate failure mechanisms and package quality and reliability control.
{"title":"Packages and Film Resistors for Hybrid Microcircuits","authors":"C. Lane","doi":"10.1109/IRPS.1975.362700","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362700","url":null,"abstract":"Resistors: A review of resistor systems, and the processes used to deposit and delineate them, is given. Effects of mechanical, thermal, chemical and electrical stresses are discussed as they relate to accuracy and stability. Failure mechanisms are reviewed. Triming techniques are explored and design limits for the various systems discussed. Parameters of interest such as frequency response, temperature coefficient, voltage coefficient and noise are compared for the various systems. Finally, quality control and screening techniques are discussed as they relate failure mechanisms and package quality and reliability control.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127672279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362705
Nicholas E. Lycoudes
{"title":"Practical Uses of Accelerated Testing at Motorola","authors":"Nicholas E. Lycoudes","doi":"10.1109/IRPS.1975.362705","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362705","url":null,"abstract":"","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129303259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1975-04-01DOI: 10.1109/IRPS.1975.362695
K. Pommer
A comprehensive study of the long life and reliability characteristics of a hermetically sealed GaAsP LED has been performed using accelerated life test techniques. A degradation model was developed based on the Arrhenius equation which was found to describe a lognormal failure distribution. The Extended-Longini failure mechanism was expanded to include the effects of crystalline dislocations.
{"title":"Reliability Study of GaAs, 63P.37 LED'S","authors":"K. Pommer","doi":"10.1109/IRPS.1975.362695","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362695","url":null,"abstract":"A comprehensive study of the long life and reliability characteristics of a hermetically sealed GaAsP LED has been performed using accelerated life test techniques. A degradation model was developed based on the Arrhenius equation which was found to describe a lognormal failure distribution. The Extended-Longini failure mechanism was expanded to include the effects of crystalline dislocations.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127039855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IRPS.1975.362672
J. Maserjian, R. Kaw, J. Collier
An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co60 irradiation. The results are related to long-term drift of threshold voltage.
{"title":"Tunnel Injection into Gate Oxide Traps","authors":"J. Maserjian, R. Kaw, J. Collier","doi":"10.1109/IRPS.1975.362672","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362672","url":null,"abstract":"An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co60 irradiation. The results are related to long-term drift of threshold voltage.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114292710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IRPS.1975.362681
A. Shumka, Richard R. Piety
Failures, failure modes and failure mechanisms related to the formation of migrated-gold resistive shorts (MGRS) in gold-metallized microcircuits will be described. Also, three different methods of screening devices for MGRS will be presented and the impact MGRS can have on device reliability will be discussed.
{"title":"Migrated-Gold Resistive Shorts in Microcircuits","authors":"A. Shumka, Richard R. Piety","doi":"10.1109/IRPS.1975.362681","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362681","url":null,"abstract":"Failures, failure modes and failure mechanisms related to the formation of migrated-gold resistive shorts (MGRS) in gold-metallized microcircuits will be described. Also, three different methods of screening devices for MGRS will be presented and the impact MGRS can have on device reliability will be discussed.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124747068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IRPS.1975.362682
F. Grunthaner, T. Griswold, P. J. Clendening
Integrated-circuit devices using the Ti/W/Au metal system are subject to failure mechanisms based on electrolytic corrosion. The migratory gold resistive short (MGRS) failure mode is one example of this mechanism and results in the formation of filamentary or dendritic deposits of gold between adjacent stripes. on the IC chip. This reaction requires the presence of a sufficient amount of water, a bias voltage between adjacent stripes, and the activation of the cathodic (-) stripe. Gold ions are transported from anode to cathode through a film of moisture adsorbed on the surface of the chip; halide ions are probably involved in the transfer. Their presence is verified experimentally by x-ray photoelectron spectroscopy. Some of the chemical and electrostatic factors involved in the MGRS mechanism are discussed in this paper, including the questions of a threshold level of moisture and contamination.
{"title":"Migratory Gold Resistive Shorts: Chemical Aspects of a Failure Mechanism","authors":"F. Grunthaner, T. Griswold, P. J. Clendening","doi":"10.1109/IRPS.1975.362682","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362682","url":null,"abstract":"Integrated-circuit devices using the Ti/W/Au metal system are subject to failure mechanisms based on electrolytic corrosion. The migratory gold resistive short (MGRS) failure mode is one example of this mechanism and results in the formation of filamentary or dendritic deposits of gold between adjacent stripes. on the IC chip. This reaction requires the presence of a sufficient amount of water, a bias voltage between adjacent stripes, and the activation of the cathodic (-) stripe. Gold ions are transported from anode to cathode through a film of moisture adsorbed on the surface of the chip; halide ions are probably involved in the transfer. Their presence is verified experimentally by x-ray photoelectron spectroscopy. Some of the chemical and electrostatic factors involved in the MGRS mechanism are discussed in this paper, including the questions of a threshold level of moisture and contamination.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129161015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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