This paper reports a state-of-the-art distributed amplifier intended for use in 100 Gbit/s optical communication systems (Ethernet). Using an InP DHBT technology, exhibiting cut-off frequency values of more than 275 GHz for both fr and fmax, the amplifier achieved a gain of 21 dB and a 90 GHz 3-dB bandwidth, resulting in a gain-bandwidth product (GBW) of 1 THz. To our best knowledge, this represents the highest gain bandwidth product achieved for single-stage amplifiers in any technology reported to date.
{"title":"Distributed Amplifier MMIC with 21 dB Gain and 90 GHz Bandwidth Using InP-Based DHBTs","authors":"K. Schneider, Rachid Driad, R. Makon, G. Weimann","doi":"10.1109/CSICS07.2007.17","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.17","url":null,"abstract":"This paper reports a state-of-the-art distributed amplifier intended for use in 100 Gbit/s optical communication systems (Ethernet). Using an InP DHBT technology, exhibiting cut-off frequency values of more than 275 GHz for both fr and fmax, the amplifier achieved a gain of 21 dB and a 90 GHz 3-dB bandwidth, resulting in a gain-bandwidth product (GBW) of 1 THz. To our best knowledge, this represents the highest gain bandwidth product achieved for single-stage amplifiers in any technology reported to date.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123493249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
GaN is an attractive material for high performance power devices. Vertical GaN power devices are suitable for high current operation, on the other hand, lateral GaN power devices, namely GaN lateral HEMTs have both low on-resistance and low parasitic capacitance. In addition, the GaN lateral HEMTs can be fabricated on Si substrate. We can get low conduction loss and low switching loss devices with low cost. So the GaN lateral HEMTs are suitable for subsystems like an air conditioner and an electric power steering. Serious technical issues about GaN power devices are a normally-off operation, a current collapse, and a high quality gate insulator. Several normally-off operation techniques have been proposed but there is no decisive method. An NH3 surface treatment and a SiO2 passivation are useful to suppress the current collapse. An Al2O3 deposited by ALD is excellent for gate insulator in breakdown and it has enough TDDB reliability under room temperature and 150°C.
{"title":"GaN Power Devices for Automotive Applications","authors":"T. Kachi","doi":"10.1117/12.2002248","DOIUrl":"https://doi.org/10.1117/12.2002248","url":null,"abstract":"GaN is an attractive material for high performance power devices. Vertical GaN power devices are suitable for high current operation, on the other hand, lateral GaN power devices, namely GaN lateral HEMTs have both low on-resistance and low parasitic capacitance. In addition, the GaN lateral HEMTs can be fabricated on Si substrate. We can get low conduction loss and low switching loss devices with low cost. So the GaN lateral HEMTs are suitable for subsystems like an air conditioner and an electric power steering. Serious technical issues about GaN power devices are a normally-off operation, a current collapse, and a high quality gate insulator. Several normally-off operation techniques have been proposed but there is no decisive method. An NH3 surface treatment and a SiO2 passivation are useful to suppress the current collapse. An Al2O3 deposited by ALD is excellent for gate insulator in breakdown and it has enough TDDB reliability under room temperature and 150°C.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128486246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Almost 35 years ago, the concept of an Ethernet network was born and almost 25 years ago the DIX (Digital- Intel-Xerox) specification led the march for an Ethernet standard. In the last 15 years, Ethernet has transitioned from a half duplex protocol to a full duplex protocol and has increased its bandwidth capabilities by three orders of magnitude. This paper looks at what the future holds for Ethernet, and what is driving those developments. Index Terms — 10 Gigabit Ethernet, 100 Gigabit Ethernet, 10GBASE-T, 10GBASE-LRM, virtualization, virtual servers. I. INTRODUCTION Ethernet has become the dominant networking technology in the Enterprise LAN environment. Its success has been based on a fairly simple paradigm of making low-cost, high- speed interconnect available from a multitude of vendors and having the equipment interoperate reliably. It is a simple concept, but not always easy to perform especially as the technology pushes the Shannon's limit of the transport medium. Ethernet's early growth was largely due to the desire to network computers in a business environment. The ability to exchange emails and files with colleagues inside a corporation permitted faster and less costly forms of communication. With the advent of the Internet, corporations could not only exchange information amongst their employees, but also with their potential clients. The ability to network a larger community helped increase the demand for networking and computer equipment in the corporate and consumer markets. Neither the Internet nor the increasing growth of data, both corporate and personal, will wane anytime soon. As a matter of fact, all reports show that the growth of data continues to double year on year. Whether it is that new 16 megapixel camera or the 16 megabyte presentation, end users have grown accustomed to the ever-increasing size of their data. And while doing so, they have also come to expect their applications to run faster and their data to arrive quicker. Hence, the explosive and continued growth of the Internet.
{"title":"The Future of Ethernet","authors":"Bradley J. Booth","doi":"10.1109/CSICS07.2007.7","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.7","url":null,"abstract":"Almost 35 years ago, the concept of an Ethernet network was born and almost 25 years ago the DIX (Digital- Intel-Xerox) specification led the march for an Ethernet standard. In the last 15 years, Ethernet has transitioned from a half duplex protocol to a full duplex protocol and has increased its bandwidth capabilities by three orders of magnitude. This paper looks at what the future holds for Ethernet, and what is driving those developments. Index Terms — 10 Gigabit Ethernet, 100 Gigabit Ethernet, 10GBASE-T, 10GBASE-LRM, virtualization, virtual servers. I. INTRODUCTION Ethernet has become the dominant networking technology in the Enterprise LAN environment. Its success has been based on a fairly simple paradigm of making low-cost, high- speed interconnect available from a multitude of vendors and having the equipment interoperate reliably. It is a simple concept, but not always easy to perform especially as the technology pushes the Shannon's limit of the transport medium. Ethernet's early growth was largely due to the desire to network computers in a business environment. The ability to exchange emails and files with colleagues inside a corporation permitted faster and less costly forms of communication. With the advent of the Internet, corporations could not only exchange information amongst their employees, but also with their potential clients. The ability to network a larger community helped increase the demand for networking and computer equipment in the corporate and consumer markets. Neither the Internet nor the increasing growth of data, both corporate and personal, will wane anytime soon. As a matter of fact, all reports show that the growth of data continues to double year on year. Whether it is that new 16 megapixel camera or the 16 megabyte presentation, end users have grown accustomed to the ever-increasing size of their data. And while doing so, they have also come to expect their applications to run faster and their data to arrive quicker. Hence, the explosive and continued growth of the Internet.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114669509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A 2-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using High-Voltage HBT (HVHBT) GaAs technology biased at 28 V on the Collector. Greater than 57% collector efficiency at 50W (47dBm) average output power has been demonstrated while achieving -55dBc linearized ACPR at 5 MHz offset using a 2-carrier-side-by-side WCDMA input signal with 6.5dB peak to average ratio measured at .01% probability on the CCDF. At this condition, the measured overall power-added efficiency is 53%. The HVHBT Doherty exhibits 200W (53dBm) PldBat 70% efficiency with 57% efficiency at 6dB output back-off (OBO) from PldB showing a 25 percentage point improvement over class AB operation.
{"title":"250W HVHBT Doherty with 57% WCDMA Efficiency Linearized to -55dBc for 2c11 6.5dB PAR","authors":"C. Steinbeiser, T. Landon, C. Suckling","doi":"10.1109/csics07.2007.16","DOIUrl":"https://doi.org/10.1109/csics07.2007.16","url":null,"abstract":"A 2-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using High-Voltage HBT (HVHBT) GaAs technology biased at 28 V on the Collector. Greater than 57% collector efficiency at 50W (47dBm) average output power has been demonstrated while achieving -55dBc linearized ACPR at 5 MHz offset using a 2-carrier-side-by-side WCDMA input signal with 6.5dB peak to average ratio measured at .01% probability on the CCDF. At this condition, the measured overall power-added efficiency is 53%. The HVHBT Doherty exhibits 200W (53dBm) PldBat 70% efficiency with 57% efficiency at 6dB output back-off (OBO) from PldB showing a 25 percentage point improvement over class AB operation.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124954005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A fully differential 40-Gb/s cable driver with adjustable pre-emphasis is presented. Based on a distributed limiting architecture, the circuit can supply up to 3.6 V peak-to-peak per side in a 75 Omega load with variable pre-emphasis ranging from 0 to 400%. S-parameter measurements show 42 dB differential small-signal gain, a bandwidth of 22 GHz, gain peaking control up to 25 dB at 20 GHz and input and output reflection coefficients better than -lOdB up to 40 GHz. Additional features of the driver include output amplitude control (from 1 Vpp to 3.6 Vpp per side), pulse-width control (35% to 65%) and an adjustable input DC level (1.1 V to 1.8 V) allowing the circuit to interface with a SiGe BiCMOS or MOS-CMLSERDES.
{"title":"A Large Swing, 40-Gb/s SiGe BiCMOS Driver with Adjustable Pre-Emphasis for Data Transmission Over 75-Ohm Coaxial Cable","authors":"R. Aroca, S. Voinigescu","doi":"10.1109/csics07.2007.39","DOIUrl":"https://doi.org/10.1109/csics07.2007.39","url":null,"abstract":"A fully differential 40-Gb/s cable driver with adjustable pre-emphasis is presented. Based on a distributed limiting architecture, the circuit can supply up to 3.6 V peak-to-peak per side in a 75 Omega load with variable pre-emphasis ranging from 0 to 400%. S-parameter measurements show 42 dB differential small-signal gain, a bandwidth of 22 GHz, gain peaking control up to 25 dB at 20 GHz and input and output reflection coefficients better than -lOdB up to 40 GHz. Additional features of the driver include output amplitude control (from 1 Vpp to 3.6 Vpp per side), pulse-width control (35% to 65%) and an adjustable input DC level (1.1 V to 1.8 V) allowing the circuit to interface with a SiGe BiCMOS or MOS-CMLSERDES.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126530412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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