The Wide Band Gap Semiconductor for RF Applications (WBGS-RF) program, supported by the Defense Advanced Research Projects Agency (DARPA), is developing microwave and millimeter-wave gallium nitride-based devices on silicon carbide substrates. Recent advances within Phase II of the Program include excellent results for both performance and reliability. Significant progress has been made towards developing manufacturable wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high frequency, high power applications.
{"title":"Recent Advances in GaN-on-SiC HEMT Reliability and Microwave Performance within the DARPA WBGS-RF Program","authors":"M. Rosker","doi":"10.1109/CSICS07.2007.13","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.13","url":null,"abstract":"The Wide Band Gap Semiconductor for RF Applications (WBGS-RF) program, supported by the Defense Advanced Research Projects Agency (DARPA), is developing microwave and millimeter-wave gallium nitride-based devices on silicon carbide substrates. Recent advances within Phase II of the Program include excellent results for both performance and reliability. Significant progress has been made towards developing manufacturable wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high frequency, high power applications.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115659497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The compound semiconductor industry, which showed great promise in the 90's, struggled with the disappointment of over supply and commoditization in the "post bubble" period and lost share to improving performance of silicon solutions. Our industry is now re-emerging as a critical technology for achieving the promise of ubiquitous wireless connectivity. While MESFET technology dominated industry volume ten years ago, it now plays an inferior role to HBT and pHEMT. New technologies, such as E/D pHEMT and BiHEMT, are emerging as the future workhorses. These technologies provide greater functionality and performance than their predecessors. At the same time, GaN technology for RF applications has moved from experimental to early commercialization. As our industry matures we are seeing changes in how compound semiconductors are taken to market. High performance packaging is making inroads where MMIC die have been the historical choice. Low-cost modules have become the preferred solution for high volume RF applications. The overall availability of compound semiconductors is consolidating as the supply and demand ratio comes back into balance. It is an exciting time for compound semiconductor development.
{"title":"The Future of Compound Semiconductors","authors":"R. Quinsey","doi":"10.1109/CSICS07.2007.59","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.59","url":null,"abstract":"The compound semiconductor industry, which showed great promise in the 90's, struggled with the disappointment of over supply and commoditization in the \"post bubble\" period and lost share to improving performance of silicon solutions. Our industry is now re-emerging as a critical technology for achieving the promise of ubiquitous wireless connectivity. While MESFET technology dominated industry volume ten years ago, it now plays an inferior role to HBT and pHEMT. New technologies, such as E/D pHEMT and BiHEMT, are emerging as the future workhorses. These technologies provide greater functionality and performance than their predecessors. At the same time, GaN technology for RF applications has moved from experimental to early commercialization. As our industry matures we are seeing changes in how compound semiconductors are taken to market. High performance packaging is making inroads where MMIC die have been the historical choice. Low-cost modules have become the preferred solution for high volume RF applications. The overall availability of compound semiconductors is consolidating as the supply and demand ratio comes back into balance. It is an exciting time for compound semiconductor development.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129597573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rohit Vaidya, Deepak Gupta, Manish Bhakuni, Rupert Prince
In the fast evolving wireless communication market, the need to have a fully integrated RF front end module (FEM) is highly felt where in all the blocks of FEM are on a single chip. For the vendors the reduced firm factor and availability of a complete integrated solution enables rapid market entry and the freedom to focus on value added branding. RF arrays has developed a single chip 802.11b/g FEM in 2.4-2.5-GHz frequency range, which consists of a integrated PA, LNA and SPDT switch with on-chip bias circuits and power detector delivering linear power of 16 dam at 4% EVM for 802.11g having OFDM 54 Mbps data rate and 20 dBm at 1.2% EVM for 802.11b having CCK 11 Mbps data rate. The transmit chain have 28 dB of gain and 23.5 dBm of PI dB. The receive chain have 2.2 dB of noise figure, 14 dBm of P1 dB and 15 dB of gain The quiescent current of PA is 56 mA in TX path while LNA is 8 mA in receive path and packaged in 3 times 3 times 0.7 mm3 16 pin QFN.
{"title":"A Miniature Low Current Fully Integrated Front End Module for WLAN 802.11b/g Applications","authors":"Rohit Vaidya, Deepak Gupta, Manish Bhakuni, Rupert Prince","doi":"10.1109/CSICS07.2007.51","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.51","url":null,"abstract":"In the fast evolving wireless communication market, the need to have a fully integrated RF front end module (FEM) is highly felt where in all the blocks of FEM are on a single chip. For the vendors the reduced firm factor and availability of a complete integrated solution enables rapid market entry and the freedom to focus on value added branding. RF arrays has developed a single chip 802.11b/g FEM in 2.4-2.5-GHz frequency range, which consists of a integrated PA, LNA and SPDT switch with on-chip bias circuits and power detector delivering linear power of 16 dam at 4% EVM for 802.11g having OFDM 54 Mbps data rate and 20 dBm at 1.2% EVM for 802.11b having CCK 11 Mbps data rate. The transmit chain have 28 dB of gain and 23.5 dBm of PI dB. The receive chain have 2.2 dB of noise figure, 14 dBm of P1 dB and 15 dB of gain The quiescent current of PA is 56 mA in TX path while LNA is 8 mA in receive path and packaged in 3 times 3 times 0.7 mm3 16 pin QFN.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126459359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Nicolson, P. Chevalier, A. Chantre, B. Sautreuil, S. Voinigescu
This paper presents the first 77 GHz single-chip direct-conversion transceiver in silicon. The transceiver, fabricated in a 0.13 mum SiGe BiCMOS technology with fT/fMAX of 170/200 GHz, consumes 740 mW, and occupies 1.3 mm x 0.9 mm. The receiver achieves 25.6 dB conversion gain, 9 dB noise figure, 90 dB dynamic range, and an IP1dB of -24 dBm. The transmitter provides +5.8 dBm of saturated output power at 77 GHz, and a divide14, static frequency divider is included on-die. A tuned, 77 GHz clock distribution network is used to distribute the VCO signal to the divider, power amplifier, and down-conversion mixer. Successful detection of a Doppler shift of 55 Hz at a range of 4 m is shown. The phase noise at IF is shown to be superior to the VCO, suggesting noise correlation between the transmitter and receiver.
本文提出了第一个77ghz硅片直接转换收发器。该收发器采用0.13 SiGe BiCMOS技术，fT/fMAX为170/200 GHz，功耗为740 mW，尺寸为1.3 mm x 0.9 mm。该接收机的转换增益为25.6 dB，噪声系数为9 dB，动态范围为90 dB, IP1dB为-24 dBm。发射器在77 GHz时提供+5.8 dBm的饱和输出功率，并在片上包含一个静态分频器。经过调谐的77ghz时钟分配网络用于将VCO信号分配给分频器、功率放大器和下变频混频器。在4米范围内成功检测到55赫兹的多普勒频移。中频处的相位噪声优于VCO，表明发射机和接收机之间存在噪声相关性。
{"title":"A 77-79-GHz Doppler Radar Transceiver in Silicon","authors":"S. Nicolson, P. Chevalier, A. Chantre, B. Sautreuil, S. Voinigescu","doi":"10.1109/CSICS07.2007.58","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.58","url":null,"abstract":"This paper presents the first 77 GHz single-chip direct-conversion transceiver in silicon. The transceiver, fabricated in a 0.13 mum SiGe BiCMOS technology with fT/fMAX of 170/200 GHz, consumes 740 mW, and occupies 1.3 mm x 0.9 mm. The receiver achieves 25.6 dB conversion gain, 9 dB noise figure, 90 dB dynamic range, and an IP1dB of -24 dBm. The transmitter provides +5.8 dBm of saturated output power at 77 GHz, and a divide14, static frequency divider is included on-die. A tuned, 77 GHz clock distribution network is used to distribute the VCO signal to the divider, power amplifier, and down-conversion mixer. Successful detection of a Doppler shift of 55 Hz at a range of 4 m is shown. The phase noise at IF is shown to be superior to the VCO, suggesting noise correlation between the transmitter and receiver.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127360282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Martin Kuball, J. Pomeroy, R. Simms, G. Riedel, H. Ji, A. Sarua, M. Uren, T. Martin
We review our latest developments in the field of Raman thermography and its application to GaN microelectronics. Device self-heating, the temperature rise in a device generated by electrical power dissipation, plays an important role for device performance and reliability, however, is difficult to assess as it occurs on sub-micrometer length scales in most devices, not observable using traditional thermography techniques. The new technique of Raman thermography enables to gain unprecedented insight into device self-heating with sub-micron spatial and with nanosecond time resolution. Thermal resistance of GaN electronic devices on different substrates and with different layouts are compared, interface thermal resistance between the GaN and the substrate was determined. Temperature measurements in the device plane and three dimensionally from the device into the substrate are discussed. Temperature in devices operated in pulsed mode as function of time, dependent on duty cycle and pulse length was studied. A comparison to temperature measurements performed using electrical methods illustrates that care must be taken when identifying junction temperatures using electrical methods.
{"title":"Thermal Properties and Reliability of GaN Microelectronics: Sub-Micron Spatial and Nanosecond Time Resolution Thermography","authors":"Martin Kuball, J. Pomeroy, R. Simms, G. Riedel, H. Ji, A. Sarua, M. Uren, T. Martin","doi":"10.1109/CSICS07.2007.32","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.32","url":null,"abstract":"We review our latest developments in the field of Raman thermography and its application to GaN microelectronics. Device self-heating, the temperature rise in a device generated by electrical power dissipation, plays an important role for device performance and reliability, however, is difficult to assess as it occurs on sub-micrometer length scales in most devices, not observable using traditional thermography techniques. The new technique of Raman thermography enables to gain unprecedented insight into device self-heating with sub-micron spatial and with nanosecond time resolution. Thermal resistance of GaN electronic devices on different substrates and with different layouts are compared, interface thermal resistance between the GaN and the substrate was determined. Temperature measurements in the device plane and three dimensionally from the device into the substrate are discussed. Temperature in devices operated in pulsed mode as function of time, dependent on duty cycle and pulse length was studied. A comparison to temperature measurements performed using electrical methods illustrates that care must be taken when identifying junction temperatures using electrical methods.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126626519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Kikkawa, K. Makiyama, K. Imanishi, T. Ohki, M. Kanamura, N. Okamoto, N. Hara, K. Joshin
The state-of-the-art GaN high electron mobility transistors (GaN-HEMTs) technology for millimeter-wave amplifiers is described in this paper. A high maximum frequency of an oscillation (fmax) device with high breakdown voltage (BVgd) was focused on to improve the gain, efficiency, and reliability of the millimeter-wave amplifier. In this study, we demonstrated a high fmax of 180 GHz with a BVgd of 190 V using a novel Y-shaped Schottky gate and n-type doped GaN cap structure. The effects of the AlGaN layer, device dimensions, and sheet resistance were investigated to obtain a highly reliable W- band power amplifier. Index Terms — Semiconductor devices, Millimeter-wave FETs, power amplifiers.
{"title":"High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications","authors":"T. Kikkawa, K. Makiyama, K. Imanishi, T. Ohki, M. Kanamura, N. Okamoto, N. Hara, K. Joshin","doi":"10.1109/CSICS07.2007.10","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.10","url":null,"abstract":"The state-of-the-art GaN high electron mobility transistors (GaN-HEMTs) technology for millimeter-wave amplifiers is described in this paper. A high maximum frequency of an oscillation (fmax) device with high breakdown voltage (BVgd) was focused on to improve the gain, efficiency, and reliability of the millimeter-wave amplifier. In this study, we demonstrated a high fmax of 180 GHz with a BVgd of 190 V using a novel Y-shaped Schottky gate and n-type doped GaN cap structure. The effects of the AlGaN layer, device dimensions, and sheet resistance were investigated to obtain a highly reliable W- band power amplifier. Index Terms — Semiconductor devices, Millimeter-wave FETs, power amplifiers.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126232229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Farkas, J. Uyeda, J. Wang, W. Luo, R. Elmadjian, D. Eaves, K. Luo, R. Lai, M. Barsky, M. Wojtowicz, A. Oki
In this paper, we demonstrate a vertically integrated 3-D MMIC phase shifter at 8 GHz that utilizes a 5-layer benzocyclobutene (BCB) process providing a total of 7 metal layers. This multi-layer technology is fully compatible with Northrop Grumman's 0.15 um GaAs HEMT technology and enables a high level of MMIC compaction which will substantially reduce the size and cost of MMICs. A key feature of this technology is the ability to isolate vertically integrated components of a MMIC' with separate ground planes allowing circuit compaction while maintaining high isolation.
{"title":"Demonstration of a 3-D GaAs HEMT Phase Shifter MMIC Utilizing a Five Layer BCB Process with Seven Metal Layers","authors":"D. Farkas, J. Uyeda, J. Wang, W. Luo, R. Elmadjian, D. Eaves, K. Luo, R. Lai, M. Barsky, M. Wojtowicz, A. Oki","doi":"10.1109/CSICS07.2007.55","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.55","url":null,"abstract":"In this paper, we demonstrate a vertically integrated 3-D MMIC phase shifter at 8 GHz that utilizes a 5-layer benzocyclobutene (BCB) process providing a total of 7 metal layers. This multi-layer technology is fully compatible with Northrop Grumman's 0.15 um GaAs HEMT technology and enables a high level of MMIC compaction which will substantially reduce the size and cost of MMICs. A key feature of this technology is the ability to isolate vertically integrated components of a MMIC' with separate ground planes allowing circuit compaction while maintaining high isolation.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131127509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Current 100-Gbit/s full-electrical time division multiplex (ETDM) transmission technologies are examined. The focus is on the electrical and electro-optical components, the state-of-the-art and the still existing bottle necks, mainly regarding the formats on-off keying (OOK) and differential quadature-phase shift keying (DQPSK). But also a comparative look on a promising rival solution with non-full ETDM will be included, namely polarization-multiplexed QPSK with coherent detection (PQPSKC).
{"title":"100-Gbit/s Full-ETDM Transmission Technologies","authors":"R. Derksen, M. Moller, C. Schubert","doi":"10.1109/CSICS07.2007.22","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.22","url":null,"abstract":"Current 100-Gbit/s full-electrical time division multiplex (ETDM) transmission technologies are examined. The focus is on the electrical and electro-optical components, the state-of-the-art and the still existing bottle necks, mainly regarding the formats on-off keying (OOK) and differential quadature-phase shift keying (DQPSK). But also a comparative look on a promising rival solution with non-full ETDM will be included, namely polarization-multiplexed QPSK with coherent detection (PQPSKC).","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117185296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Ma, J. Bergman, P.S. Chen, J. Hacker, G. Sullivan, B. Brar
This paper reports an ultra-wideband ultra-low-DC power high gain MMIC low noise amplifier (LNA) with differential RF input using 0.1-mum gate length InAs/AlSb metamorphic HEMTs, fabricated and characterized on a GaAs substrate. For testing purpose and for generating a differential RF input, a 3-12 GHz wideband on-chip MMIC balun is connected to the differential input. Even with the loss of the balun included, the differential amplifier demonstrated 4 dB typical noise figure with associated gain of 22 dB from 3-12 GHz at a low DC dissipation of 23 mW. Additionally, a single-ended LNA, which the differential LNA is based on, is also fabricated for evaluation. The single-ended LNA demonstrated 1.5 dB typical noise figure with associated gain of 25 dB from 1-16 GHz at a low DC dissipation of 16 mW
{"title":"Ultra-Wideband Ultra-Low-DC-Power High Gain Differential-Input Low Noise Amplifier MMIC Using InAs/AlSb HEMT","authors":"B. Ma, J. Bergman, P.S. Chen, J. Hacker, G. Sullivan, B. Brar","doi":"10.1109/CSICS07.2007.49","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.49","url":null,"abstract":"This paper reports an ultra-wideband ultra-low-DC power high gain MMIC low noise amplifier (LNA) with differential RF input using 0.1-mum gate length InAs/AlSb metamorphic HEMTs, fabricated and characterized on a GaAs substrate. For testing purpose and for generating a differential RF input, a 3-12 GHz wideband on-chip MMIC balun is connected to the differential input. Even with the loss of the balun included, the differential amplifier demonstrated 4 dB typical noise figure with associated gain of 22 dB from 3-12 GHz at a low DC dissipation of 23 mW. Additionally, a single-ended LNA, which the differential LNA is based on, is also fabricated for evaluation. The single-ended LNA demonstrated 1.5 dB typical noise figure with associated gain of 25 dB from 1-16 GHz at a low DC dissipation of 16 mW","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115942854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Murase, A. Wakejima, T. Inoue, K. Yamanoguchi, M. Tanomura, T. Nakayama, Y. Okamoto, K. Ota, Y. Ando, N. Kuroda, K. Matsunaga, H. Miyamoto
This paper describes an AlGaN/GaN FET power amplifier module delivering a continuous wave (CW) output power of more than 20 W at 26 GHz. To achieve high breakdown characteristics with reduced current collapse and high gain, we have developed a 0.2 µm-long recessed-gate AlGaN/GaN FET with a field-modulating plate (FP), achieving high operation voltage of 25 V even at quasi-millimeter wave frequencies. A single-ended AlGaN/GaN FP-FET amplifier module for quasi- millimeter wave frequency has been fabricated for the first time. The amplifier module developed using a 6.3-mm-wide single chip recessed-gate AlGaN/GaN FP-FET exhibited an output power of 20.7 W, a linear gain of 5.4 dB and a power-aided efficiency of 21.3% at 26 GHz. This is the highest output power in solid state power amplifiers at over 20 GHz.
{"title":"CW 20-W AlGaN/GaN FET Power Amplifier for Quasi-Millimeter Wave Applications","authors":"Y. Murase, A. Wakejima, T. Inoue, K. Yamanoguchi, M. Tanomura, T. Nakayama, Y. Okamoto, K. Ota, Y. Ando, N. Kuroda, K. Matsunaga, H. Miyamoto","doi":"10.1109/CSICS07.2007.12","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.12","url":null,"abstract":"This paper describes an AlGaN/GaN FET power amplifier module delivering a continuous wave (CW) output power of more than 20 W at 26 GHz. To achieve high breakdown characteristics with reduced current collapse and high gain, we have developed a 0.2 µm-long recessed-gate AlGaN/GaN FET with a field-modulating plate (FP), achieving high operation voltage of 25 V even at quasi-millimeter wave frequencies. A single-ended AlGaN/GaN FP-FET amplifier module for quasi- millimeter wave frequency has been fabricated for the first time. The amplifier module developed using a 6.3-mm-wide single chip recessed-gate AlGaN/GaN FP-FET exhibited an output power of 20.7 W, a linear gain of 5.4 dB and a power-aided efficiency of 21.3% at 26 GHz. This is the highest output power in solid state power amplifiers at over 20 GHz.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132307222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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