This paper describes 100-Gb/s-class high-speed and large-capacity optical transmission technologies with focus on the modulation formats and high-speed optical/electrical devices. First, we review the recent progress of 100-Gb/s-class transmission technologies. We then discuss the transmission characteristics of several promising modulation formats with the line rate of 111 Gb/s. Next, we show the results of a 20.4-Tb/s transmission experiment using the 111-Gb/s CSRZ-DQPSK format and gain-flattened hybrid Raman/EDFAs.
{"title":"Recent Progress in High-Speed and Large-Capacity Optical Transmission Technologies","authors":"A. Sano, H. Masuda, E. Yoshida, Y. Miyamoto","doi":"10.1109/CSICS07.2007.21","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.21","url":null,"abstract":"This paper describes 100-Gb/s-class high-speed and large-capacity optical transmission technologies with focus on the modulation formats and high-speed optical/electrical devices. First, we review the recent progress of 100-Gb/s-class transmission technologies. We then discuss the transmission characteristics of several promising modulation formats with the line rate of 111 Gb/s. Next, we show the results of a 20.4-Tb/s transmission experiment using the 111-Gb/s CSRZ-DQPSK format and gain-flattened hybrid Raman/EDFAs.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124270735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A conversion loss of 8.5 dB is achieved for down-conversion of a 210 GHz RF signal in a sub-harmonically pumped mixer MMIC. The active FET mixer, realized in a 100 nm gate length metamorphic HEMT process, employs a dual-gate topology. The mixer achieves a 3-dB RF bandwidth from 188 to more than 210 GHz and is driven by a 10 dBm subharmonic LO signal. The combination with an integrated source follower stage results in a 2 GHz IF bandwidth. The mixer is dedicated to active imaging systems for concealed weapon detection operating in the atmospheric window around 220 GHz.
{"title":"A 210 GHz, Subharmonically-Pumped Active FET Mixer MMIC for Radar Imaging Applications","authors":"I. Kallfass, H. Massler, A. Leuther","doi":"10.1109/CSICS07.2007.18","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.18","url":null,"abstract":"A conversion loss of 8.5 dB is achieved for down-conversion of a 210 GHz RF signal in a sub-harmonically pumped mixer MMIC. The active FET mixer, realized in a 100 nm gate length metamorphic HEMT process, employs a dual-gate topology. The mixer achieves a 3-dB RF bandwidth from 188 to more than 210 GHz and is driven by a 10 dBm subharmonic LO signal. The combination with an integrated source follower stage results in a 2 GHz IF bandwidth. The mixer is dedicated to active imaging systems for concealed weapon detection operating in the atmospheric window around 220 GHz.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117308100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Tessmann, A. Leuther, H. Massler, M. Kuri, M. Riessle, M. Zink, R. Sommer, A. Wahlen, H. Essen
In this paper, we present the development of a W-band power amplifier (PA) circuit and a G-band low-noise amplifier (LNA) MMIC for use in a high-resolution radar system operating at 210 GHz. The power amplifier circuit has been realized using a 0.1 um InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (MHEMT) technology in combination with grounded coplanar circuit topology and cascode transistors, thus leading to a small-signal gain of 12 dB and a saturated output power of 20.5 dBm at 105 GHz. The low-noise amplifier MMIC was fabricated using an advanced 0.05 mum MHEMT technology and achieved a small-signal gain of more than 16 dB over the frequency band from 180 to 220 GHz together with a state-of-the-art room temperature noise figure of only 4.8 dB. Both amplifier circuits were successfully packaged into millimeter-wave waveguide modules and used to realize a 210 GHz radar, which delivers an instantaneous bandwidth of 8 GHz and an outstanding spatial resolution of 1.8 cm.
{"title":"Metamorphic HEMT Amplifier Circuits for Use in a High Resolution 210 GHz Radar","authors":"A. Tessmann, A. Leuther, H. Massler, M. Kuri, M. Riessle, M. Zink, R. Sommer, A. Wahlen, H. Essen","doi":"10.1109/CSICS07.2007.57","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.57","url":null,"abstract":"In this paper, we present the development of a W-band power amplifier (PA) circuit and a G-band low-noise amplifier (LNA) MMIC for use in a high-resolution radar system operating at 210 GHz. The power amplifier circuit has been realized using a 0.1 um InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (MHEMT) technology in combination with grounded coplanar circuit topology and cascode transistors, thus leading to a small-signal gain of 12 dB and a saturated output power of 20.5 dBm at 105 GHz. The low-noise amplifier MMIC was fabricated using an advanced 0.05 mum MHEMT technology and achieved a small-signal gain of more than 16 dB over the frequency band from 180 to 220 GHz together with a state-of-the-art room temperature noise figure of only 4.8 dB. Both amplifier circuits were successfully packaged into millimeter-wave waveguide modules and used to realize a 210 GHz radar, which delivers an instantaneous bandwidth of 8 GHz and an outstanding spatial resolution of 1.8 cm.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122811903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Mićović, A. Kurdoghlian, T. Lee, R.O. Hiramoto, P. Hashimoto, A. Schmitz, I. Milosavljević, P. Willadsen, William S. Wong, M. Antcliffe, M. Wetzel, M. Hu, M. Delaney, D. Chow
We report robust GaN MMIC LNA operating over 4 GHz-6 GHz frequency range. An FET biased in common-drain configuration is used on the second stage of the MMIC to obtain good input return loss at the optimum noise match over the entire frequency range. The measured noise figure of the MMIC is less than 2 dB over the 4.5 GHz to 16 GHz frequency range and NF has a minimum of 1.45 dB at a frequency of 6.5 GHz. The MMIC gain is more than 10 dB and the input return loss of the MMIC is less than -10 dB over the 4 GHz-15 GHz frequency range. Reported MMIC can survive 5.4 W of incident RF power without front end protection. To the authors knowledge this is the best combination of the noise figure, input return loss, RF survivability and broadband response reported to date in this frequency range using GaN technology. The noise figure of the reported GaN MMIC is 0.5 dB lower than the overall noise figure of an equivalent GaAs pHEMT module consisting of the state of the art LNA and a 5 Watt power limiter at the front end.
{"title":"Robust Broadband (4 GHz - 16 GHz) GaN MMIC LNA","authors":"M. Mićović, A. Kurdoghlian, T. Lee, R.O. Hiramoto, P. Hashimoto, A. Schmitz, I. Milosavljević, P. Willadsen, William S. Wong, M. Antcliffe, M. Wetzel, M. Hu, M. Delaney, D. Chow","doi":"10.1109/CSICS07.2007.54","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.54","url":null,"abstract":"We report robust GaN MMIC LNA operating over 4 GHz-6 GHz frequency range. An FET biased in common-drain configuration is used on the second stage of the MMIC to obtain good input return loss at the optimum noise match over the entire frequency range. The measured noise figure of the MMIC is less than 2 dB over the 4.5 GHz to 16 GHz frequency range and NF has a minimum of 1.45 dB at a frequency of 6.5 GHz. The MMIC gain is more than 10 dB and the input return loss of the MMIC is less than -10 dB over the 4 GHz-15 GHz frequency range. Reported MMIC can survive 5.4 W of incident RF power without front end protection. To the authors knowledge this is the best combination of the noise figure, input return loss, RF survivability and broadband response reported to date in this frequency range using GaN technology. The noise figure of the reported GaN MMIC is 0.5 dB lower than the overall noise figure of an equivalent GaAs pHEMT module consisting of the state of the art LNA and a 5 Watt power limiter at the front end.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129610274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Toifl, C. Menolfi, P. Buchmann, C. Hagleitner, M. Kossel, T. Morf, J. Weiss, M. Schmatz
We describe circuit techniques for a 40 Gbit/s CMOS CDR circuit in 65 nm CMOS-SOI technology, which mostly uses a full-swing CMOS circuit style to minimize power and area. The quarter rate receiver uses a phase-programmable PLL (P-PLL) architecture for clock generation and phase tracking, and implements a high-speed sampler based on CMOS SenseAmp latches. The circuit uses 0.03mm2 of chip area, and consumes 72mV of power at 40 Gbps data rate. We describe in detail the implementation of several crucial components, i.e. the ring VCO, which was optimized for high-speed operation, and the sampling and demultiplexing stage.
{"title":"A Low-Power 40 Gbit/s Receiver Circuit Based on Full-Swing CMOS-Style Clocking","authors":"T. Toifl, C. Menolfi, P. Buchmann, C. Hagleitner, M. Kossel, T. Morf, J. Weiss, M. Schmatz","doi":"10.1109/CSICS07.2007.27","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.27","url":null,"abstract":"We describe circuit techniques for a 40 Gbit/s CMOS CDR circuit in 65 nm CMOS-SOI technology, which mostly uses a full-swing CMOS circuit style to minimize power and area. The quarter rate receiver uses a phase-programmable PLL (P-PLL) architecture for clock generation and phase tracking, and implements a high-speed sampler based on CMOS SenseAmp latches. The circuit uses 0.03mm2 of chip area, and consumes 72mV of power at 40 Gbps data rate. We describe in detail the implementation of several crucial components, i.e. the ring VCO, which was optimized for high-speed operation, and the sampling and demultiplexing stage.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125336813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Krishnamurthy, M. Poulton, J. Martin, R. Vetury, J.D. Brown, B. Shealy
We report an efficient 250 W GaN HEMT power amplifier with 2.1 -2.5 GHz bandwidth. The amplifier employs AlGaN/GaN HEMTs with advanced source connected field plates, which are suitable for 48 V operation. The package combines two 22.2 mm periphery devices to obtain 54.0 dBm output power at 2.14 GHz and 54.6 dBm at 2.5 GHz, under pulsed condition with 10% duty cycle and 20mus pulse width. To our knowledge this is one of the widest bandwidth reported at this power level and frequency. These amplifiers are targeted for wideband digital cellular infrastructure; satellite communication, avionics and ISM band applications.
我们报道了一种高效的250 W GaN HEMT功率放大器，带宽为2.1 -2.5 GHz。放大器采用AlGaN/GaN hemt与先进的源连接场板，适用于48v工作。该封装结合了两个22.2 mm外围器件，在10%占空比和20mus脉冲宽度的脉冲条件下，在2.14 GHz和2.5 GHz分别获得54.0 dBm和54.6 dBm的输出功率。据我们所知，这是在此功率水平和频率下报道的最宽带宽之一。这些放大器的目标是宽带数字蜂窝基础设施;卫星通信、航空电子和ISM波段应用。
{"title":"A 250W S-Band GaN HEMT Amplifier","authors":"K. Krishnamurthy, M. Poulton, J. Martin, R. Vetury, J.D. Brown, B. Shealy","doi":"10.1109/CSICS07.2007.14","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.14","url":null,"abstract":"We report an efficient 250 W GaN HEMT power amplifier with 2.1 -2.5 GHz bandwidth. The amplifier employs AlGaN/GaN HEMTs with advanced source connected field plates, which are suitable for 48 V operation. The package combines two 22.2 mm periphery devices to obtain 54.0 dBm output power at 2.14 GHz and 54.6 dBm at 2.5 GHz, under pulsed condition with 10% duty cycle and 20mus pulse width. To our knowledge this is one of the widest bandwidth reported at this power level and frequency. These amplifiers are targeted for wideband digital cellular infrastructure; satellite communication, avionics and ISM band applications.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129957525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A compact CMOS SPDT switch fabricated in 0.18 mum BiCMOS technology has been successfully demonstrated at X-Ku-band. The fully integrated chip exhibits a low insertion loss of 1.9 dB and an isolation of 22.5 dB at 17 GHz. By reverse biasing the source/drain (S/D) diode junctions, the switch achieves a PldB of 21 dBm and TOI greater than 30 dB in a very compact structure. The small footprint, along with the performance being comparable to GaAs switches, makes the switch a very attractive, low cost building block circuit for MMIC designs.
{"title":"A Compact SPDT Switch in 0.18um CMOS Process With High Linearity and Low Insertion Loss","authors":"M. Teshiba, G. Sakamoto, T. Cisco","doi":"10.1109/CSICS07.2007.36","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.36","url":null,"abstract":"A compact CMOS SPDT switch fabricated in 0.18 mum BiCMOS technology has been successfully demonstrated at X-Ku-band. The fully integrated chip exhibits a low insertion loss of 1.9 dB and an isolation of 22.5 dB at 17 GHz. By reverse biasing the source/drain (S/D) diode junctions, the switch achieves a PldB of 21 dBm and TOI greater than 30 dB in a very compact structure. The small footprint, along with the performance being comparable to GaAs switches, makes the switch a very attractive, low cost building block circuit for MMIC designs.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121103893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Miyashita, T. Okuda, H. Kurusu, S. Shimamura, S. Konishi, J. Udomoto, R. Matsushita, Y. Sasaki, S. Suzuki, T. Miura, M. Komaru, K. Yamamoto
This paper describes two GaAs HBT MMIC power amplifier modules (PAs) for 2.5-GHz- and 3.5-GHz-band WiMAX applications. Each amplifier module integrates a fully 50-Omega input/output matched three-stage amplifier, a 0/20-dB step attenuator, an attenuator controller, and an RF detector together with all bias circuits, featuring on-module full integration. The step attenuator operating with high power handling capability, low-distortion, and low-bias current is placed between the first and second stages, thereby suppressing the change of the input return loss between thru and attenuation modes. With the 4.5 mm x 4.5 mm small-size module, optimized circuit design approaches lead to the following good measurement results under the 6-V supply voltage and WiMAX modulation (64QAM) test condition. The 2.5-GHz-band PA is capable of delivering a high gain (Gp) of over 31.9 dB, EVM of less than 2.1%, and PAE of more than 13.4% at a 28-dBm high output power (Pout). For the 3.5-GHz-band PA, a high Gp of over 28.1 dB, EVM of less than 2.4%, and PAE of over 11% are achieved at a Pout, of 28 dBm.
本文介绍了两种用于2.5 ghz和3.5 ghz频段WiMAX应用的GaAs HBT MMIC功率放大器模块(PAs)。每个放大器模块集成了一个完全50 ω输入/输出匹配的三级放大器，一个0/20 db阶跃衰减器，一个衰减器控制器和一个RF检测器以及所有偏置电路，具有模块上完全集成的特点。具有高功率处理能力、低失真和低偏置电流的阶跃衰减器放置在第一级和第二级之间，从而抑制了通过和衰减模式之间输入返回损耗的变化。采用4.5 mm x 4.5 mm的小尺寸模块，优化的电路设计方法在6v电源电压和WiMAX调制(64QAM)测试条件下获得了以下良好的测量结果。2.5 ghz频段PA能够在28 dbm高输出功率(Pout)下提供超过31.9 dB的高增益(Gp)，小于2.1%的EVM和超过13.4%的PAE。对于3.5 ghz频段的PA，在28dbm的Pout下实现了超过28.1 dB的高Gp，小于2.4%的EVM和超过11%的PAE。
{"title":"Fully Integrated GaAs HBT MMIC Power Amplifier Modules for 2.5/3.5-GHz-Band WiMAX Applications","authors":"M. Miyashita, T. Okuda, H. Kurusu, S. Shimamura, S. Konishi, J. Udomoto, R. Matsushita, Y. Sasaki, S. Suzuki, T. Miura, M. Komaru, K. Yamamoto","doi":"10.1109/CSICS07.2007.50","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.50","url":null,"abstract":"This paper describes two GaAs HBT MMIC power amplifier modules (PAs) for 2.5-GHz- and 3.5-GHz-band WiMAX applications. Each amplifier module integrates a fully 50-Omega input/output matched three-stage amplifier, a 0/20-dB step attenuator, an attenuator controller, and an RF detector together with all bias circuits, featuring on-module full integration. The step attenuator operating with high power handling capability, low-distortion, and low-bias current is placed between the first and second stages, thereby suppressing the change of the input return loss between thru and attenuation modes. With the 4.5 mm x 4.5 mm small-size module, optimized circuit design approaches lead to the following good measurement results under the 6-V supply voltage and WiMAX modulation (64QAM) test condition. The 2.5-GHz-band PA is capable of delivering a high gain (Gp) of over 31.9 dB, EVM of less than 2.1%, and PAE of more than 13.4% at a 28-dBm high output power (Pout). For the 3.5-GHz-band PA, a high Gp of over 28.1 dB, EVM of less than 2.4%, and PAE of over 11% are achieved at a Pout, of 28 dBm.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116120847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Bessemoulin, S. Mahon, J. Harvey, D. Richardson
The performance of a compact 38-GHz linear power amplifier MMIC' designed for use in SMD package is presented. The amplifier is fabricated with a 6-inch 0.15 mum GaAs low-noise PHEMT technology, and features on-chip ESD protection with input short-circuit stub, robust capacitors at RF ports and high current diode arrays. While occupying a chip area of only 3.5 mm2 , at 5 V and 600 mA, this 4-stage amplifier achieves a small signal gain of more than 26 dB over the 35-to 42 GHz frequency band, 26-dBm output power in saturation, and excellent intermodulation performance with up to 37-dBm OIP3 when backed-off. Finally, the PA MMIC exhibits excellent performance in packaged form as well, with 25-dB linear gain in the 35-42 GHz band and output referred intercept point of more than to 35 dBm.
{"title":"GaAs PHEMT Power Amplifier MMIC with Integrated ESD Protection for Full SMD 38-GHz Radio Chipset","authors":"A. Bessemoulin, S. Mahon, J. Harvey, D. Richardson","doi":"10.1109/CSICS07.2007.24","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.24","url":null,"abstract":"The performance of a compact 38-GHz linear power amplifier MMIC' designed for use in SMD package is presented. The amplifier is fabricated with a 6-inch 0.15 mum GaAs low-noise PHEMT technology, and features on-chip ESD protection with input short-circuit stub, robust capacitors at RF ports and high current diode arrays. While occupying a chip area of only 3.5 mm2 , at 5 V and 600 mA, this 4-stage amplifier achieves a small signal gain of more than 26 dB over the 35-to 42 GHz frequency band, 26-dBm output power in saturation, and excellent intermodulation performance with up to 37-dBm OIP3 when backed-off. Finally, the PA MMIC exhibits excellent performance in packaged form as well, with 25-dB linear gain in the 35-42 GHz band and output referred intercept point of more than to 35 dBm.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123768679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Yamamoto, M. Miyashita, H. Kurusu, N. Ogawa, T. Shimura
This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in wireless applications. The detector features logarithm-like, frequency-independent characteristics. The detector can be also driven with small input power levels, enabling base-terminal monitor which can utilize directivity of a power stage. Since a unique current-mirror-based topology is successfully employed for realizing these features, the detector is easy to implement on a GaAs HBT power amplifier. Measurement results of a prototype detector fabricated with a single-stage amplifier on the same die are as follows. The detector can deliver a detection voltage of 0.4-2.5 V and its slope of less than 0.17 V/dB over a 2-22-dBm output power range at 3.5 GHz while drawing a current of less than 1.8 mA from a 2.85-V supply. The detector is also capable of suppressing voltage dispersion within 50 mV over a 3.1-3.9-GHz wide frequency range operation, and this dispersion is less than one-seventh of that of a conventional collector-terminal-monitor type diode detector.
{"title":"A Current-Mirror-Based GaAs-HBT RF Power Detector for Wireless Applications","authors":"K. Yamamoto, M. Miyashita, H. Kurusu, N. Ogawa, T. Shimura","doi":"10.1109/CSICS07.2007.52","DOIUrl":"https://doi.org/10.1109/CSICS07.2007.52","url":null,"abstract":"This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in wireless applications. The detector features logarithm-like, frequency-independent characteristics. The detector can be also driven with small input power levels, enabling base-terminal monitor which can utilize directivity of a power stage. Since a unique current-mirror-based topology is successfully employed for realizing these features, the detector is easy to implement on a GaAs HBT power amplifier. Measurement results of a prototype detector fabricated with a single-stage amplifier on the same die are as follows. The detector can deliver a detection voltage of 0.4-2.5 V and its slope of less than 0.17 V/dB over a 2-22-dBm output power range at 3.5 GHz while drawing a current of less than 1.8 mA from a 2.85-V supply. The detector is also capable of suppressing voltage dispersion within 50 mV over a 3.1-3.9-GHz wide frequency range operation, and this dispersion is less than one-seventh of that of a conventional collector-terminal-monitor type diode detector.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127002978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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