首页 > 最新文献

2013 25th International Conference on Microelectronics (ICM)最新文献

英文 中文
Drain induced barrier lowering (DIBL) accurate model for nanoscale Si-MOSFET transistor 纳米硅- mosfet晶体管漏极感应势垒降低(DIBL)精确模型
Pub Date : 2013-12-01 DOI: 10.1109/ICM.2013.6735011
M. Al-Mistarihi, A. Rjoub, Nedal R. Al-Taradeh
In this paper, an accurate new model for drain induced barrier lowering (DIBL) tunneling in silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is proposed. The effect of drain (Vds) and substrate (Vbs) voltages variation on DIBL is discussed. The dependency of channel length variation (ΔL), junction depth (rj), and substrate impurity concentration (NB) on DIBL is analyzed, and new equations are obtained. The evaluation results for the proposed model using MATHEMATICA give good agreement when compared with analytical and simulation results for BSIM4 level 54 and recent well-known models using HSPICE simulator.
本文提出了一个精确的金属氧化物半导体场效应晶体管(MOSFET)在绝缘体上硅(SOI)中漏极诱导势垒降低(DIBL)隧穿的新模型。讨论了漏极电压(Vds)和衬底电压(Vbs)变化对DIBL的影响。分析了沟道长度变化(ΔL)、结深(rj)和底物杂质浓度(NB)对DIBL的依赖关系,得到了新的方程。用MATHEMATICA软件对模型进行了评价,并与BSIM4 level 54和HSPICE模拟器对模型的分析和仿真结果进行了比较,结果吻合较好。
{"title":"Drain induced barrier lowering (DIBL) accurate model for nanoscale Si-MOSFET transistor","authors":"M. Al-Mistarihi, A. Rjoub, Nedal R. Al-Taradeh","doi":"10.1109/ICM.2013.6735011","DOIUrl":"https://doi.org/10.1109/ICM.2013.6735011","url":null,"abstract":"In this paper, an accurate new model for drain induced barrier lowering (DIBL) tunneling in silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is proposed. The effect of drain (Vds) and substrate (Vbs) voltages variation on DIBL is discussed. The dependency of channel length variation (ΔL), junction depth (rj), and substrate impurity concentration (NB) on DIBL is analyzed, and new equations are obtained. The evaluation results for the proposed model using MATHEMATICA give good agreement when compared with analytical and simulation results for BSIM4 level 54 and recent well-known models using HSPICE simulator.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133335536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Low power and high linear reconfigurable CMOS LNA for multi-standard wireless applications 低功耗和高线性可重构CMOS LNA多标准无线应用
Pub Date : 2013-12-01 DOI: 10.1109/ICM.2013.6734991
A. Taibi, A. Slimane, M. Belaroussi, S. Tedjini, M. Trabelsi
This paper presents a low power and high linear reconfigurable CMOS low noise amplifier for wireless multi-standard applications including GSM (PCS1900), 3G (UMTS), Bluetooth and WLAN b/g. Based on inductive degenerated cascode topology, this LNA achieves a good trade-off between high gain, noise figure and power consumption. The input and output matching networks include controlled MOS-varactor devices to select the desired bands for multi-standard purpose. A post linearization technique is also used to improve the LNA linearity. Implemented in 0.18-μm CMOS technology, the simulated results perform a power gain higher than 21 dB, a noise figure below 2.7 dB, an input return loss less than -12.1dB and more than -3 dBm for the third-order input intercept point in frequency band 1.9-2.4 GHz. For all standards the proposed LNA consumes only a 10.9mW from 1.8V supply voltage.
本文提出了一种低功耗、高线性可重构CMOS低噪声放大器,适用于GSM (PCS1900)、3G (UMTS)、蓝牙和WLAN b/g等无线多标准应用。基于电感退化级联码拓扑,该LNA在高增益、噪声和功耗之间取得了良好的平衡。输入和输出匹配网络包括可控mos变容器件,以选择多标准用途所需的频带。后线性化技术也用于提高LNA的线性度。仿真结果表明,采用0.18 μm CMOS技术,在1.9 ~ 2.4 GHz频段的三阶输入截获点,功率增益大于21 dB,噪声系数小于2.7 dB,输入回波损耗小于-12.1dB,大于-3 dBm。对于所有标准,所建议的LNA在1.8V电源电压下仅消耗10.9mW。
{"title":"Low power and high linear reconfigurable CMOS LNA for multi-standard wireless applications","authors":"A. Taibi, A. Slimane, M. Belaroussi, S. Tedjini, M. Trabelsi","doi":"10.1109/ICM.2013.6734991","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734991","url":null,"abstract":"This paper presents a low power and high linear reconfigurable CMOS low noise amplifier for wireless multi-standard applications including GSM (PCS1900), 3G (UMTS), Bluetooth and WLAN b/g. Based on inductive degenerated cascode topology, this LNA achieves a good trade-off between high gain, noise figure and power consumption. The input and output matching networks include controlled MOS-varactor devices to select the desired bands for multi-standard purpose. A post linearization technique is also used to improve the LNA linearity. Implemented in 0.18-μm CMOS technology, the simulated results perform a power gain higher than 21 dB, a noise figure below 2.7 dB, an input return loss less than -12.1dB and more than -3 dBm for the third-order input intercept point in frequency band 1.9-2.4 GHz. For all standards the proposed LNA consumes only a 10.9mW from 1.8V supply voltage.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133214529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Temperature performances of bulk MOS transistors for use as temperature sensitive element for bolometer applications 热计中用作温度敏感元件的大块MOS晶体管的温度性能
Pub Date : 2013-12-01 DOI: 10.1109/ICM.2013.6735012
Étienne Fuxa, J. Yon, J. Jomaah
This paper focuses on the study of thermal performances of MOS transistors for bolometer applications. Series of measurements have been conducted to obtain TCC (Temperature Coefficient of Current) versus gate voltage and temperature curves. The measurements were confronted to atlas simulations, and showed that in the subthreshold region the TCC ranges from 4%/K all the way to 9%/K. It was also determined that gate length does not have an influence on the TCC until short channel effects factor in.
本文重点研究了用于测热计的MOS晶体管的热性能。进行了一系列测量以获得TCC(电流温度系数)与栅极电压和温度的关系曲线。结果表明,在亚阈值区域,TCC范围为4%/K ~ 9%/K。还确定栅极长度对TCC没有影响,直到短通道效应因素。
{"title":"Temperature performances of bulk MOS transistors for use as temperature sensitive element for bolometer applications","authors":"Étienne Fuxa, J. Yon, J. Jomaah","doi":"10.1109/ICM.2013.6735012","DOIUrl":"https://doi.org/10.1109/ICM.2013.6735012","url":null,"abstract":"This paper focuses on the study of thermal performances of MOS transistors for bolometer applications. Series of measurements have been conducted to obtain TCC (Temperature Coefficient of Current) versus gate voltage and temperature curves. The measurements were confronted to atlas simulations, and showed that in the subthreshold region the TCC ranges from 4%/K all the way to 9%/K. It was also determined that gate length does not have an influence on the TCC until short channel effects factor in.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125732406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heating water using the recovered chimney waste heat - Prototype and experimental analysis 利用回收的烟囱余热加热水-原型及实验分析
Pub Date : 2013-12-01 DOI: 10.1109/ICM.2013.6734975
M. Khaled, M. Ramadan, Mostafa Gad El Rab, K. Chahine, A. Assi
This work discusses a waste heat recovery system applied to chimneys allowing to heat water in residential buildings. A prototype illustrating the idea is implemented and tested. Different waste heat scenarios by varying the quantity of burned firewood (heat input) are experimented. Temperature measurements are performed at different parts of the heat recovery system. Gas flow rates of the Exhaust pipes of the system are also measured. Using this system, measurements showed that a tank of 95 L of water can be heated up to 78 °C within one hour. Obtained results show that the convection and radiation exchanges at the bottom surface of the tank have a considerable impact on the total heat transfer rate of the water (up to 70%) used in the prototype under test.
本文讨论了一种应用于住宅建筑中用于加热水的烟囱的余热回收系统。一个原型说明的想法是实现和测试。通过改变燃烧木柴的数量(热输入),实验了不同的余热情景。在热回收系统的不同部分进行温度测量。还测量了系统排气管的气体流速。使用该系统,测量表明,一个水箱95升的水可以在一个小时内加热到78°C。得到的结果表明,水箱底表面的对流和辐射交换对试验样机所用水的总换热率有相当大的影响(可达70%)。
{"title":"Heating water using the recovered chimney waste heat - Prototype and experimental analysis","authors":"M. Khaled, M. Ramadan, Mostafa Gad El Rab, K. Chahine, A. Assi","doi":"10.1109/ICM.2013.6734975","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734975","url":null,"abstract":"This work discusses a waste heat recovery system applied to chimneys allowing to heat water in residential buildings. A prototype illustrating the idea is implemented and tested. Different waste heat scenarios by varying the quantity of burned firewood (heat input) are experimented. Temperature measurements are performed at different parts of the heat recovery system. Gas flow rates of the Exhaust pipes of the system are also measured. Using this system, measurements showed that a tank of 95 L of water can be heated up to 78 °C within one hour. Obtained results show that the convection and radiation exchanges at the bottom surface of the tank have a considerable impact on the total heat transfer rate of the water (up to 70%) used in the prototype under test.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122326105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Time delay estimation of GPR backscattered signals using matrix pencil based support vector regression 基于矩阵铅笔支持向量回归的探地雷达后向散射信号时延估计
Pub Date : 2013-12-01 DOI: 10.1109/ICM.2013.6734984
K. Chahine
The need for estimating time delays arises in numerous applications where a multipath medium has to be identified from wavelets transmitted through the channel. This paper presents a method for estimating the time delays of ground penetrating radar backscattered signals. The proposed method consists of two steps: feature extraction through the generalized eigenvalue decomposition of a Hankel matrix pencil followed by training and prediction using support vector regression. The proposed feature extraction technique reduces the dimension of feature vectors and thus allows for more efficient testing and training. Simulation results show that the method succeeds in accurately estimating the time delays of the model.
在许多需要从通过信道传输的小波中识别多径介质的应用中,需要估计时间延迟。提出了一种估计探地雷达后向散射信号时延的方法。该方法包括两个步骤:通过汉克尔矩阵铅笔的广义特征值分解提取特征,然后使用支持向量回归进行训练和预测。所提出的特征提取技术降低了特征向量的维数,从而允许更有效的测试和训练。仿真结果表明,该方法能够准确地估计出模型的时滞。
{"title":"Time delay estimation of GPR backscattered signals using matrix pencil based support vector regression","authors":"K. Chahine","doi":"10.1109/ICM.2013.6734984","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734984","url":null,"abstract":"The need for estimating time delays arises in numerous applications where a multipath medium has to be identified from wavelets transmitted through the channel. This paper presents a method for estimating the time delays of ground penetrating radar backscattered signals. The proposed method consists of two steps: feature extraction through the generalized eigenvalue decomposition of a Hankel matrix pencil followed by training and prediction using support vector regression. The proposed feature extraction technique reduces the dimension of feature vectors and thus allows for more efficient testing and training. Simulation results show that the method succeeds in accurately estimating the time delays of the model.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115804481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A sub-threshold halo implanted MOS implementation of an electronic neuron 亚阈值光晕植入电子神经元的MOS实现
Pub Date : 2013-12-01 DOI: 10.1109/ICM.2013.6734979
Odilon O. Dutra, Gustavo D. Colleta, L. H. C. Ferreira, T. Pimenta
This work describes a current mode implementation of Izhikevich neuron model designed with 130 nm halo implanted devices structured within matrices of order m × n capable of substantially increasing output impedance while also improving mismatch and requiring a power supply of only 250 mV.
本工作描述了一种Izhikevich神经元模型的电流模式实现,该模型设计了在m × n阶矩阵内结构的130 nm晕植入器件,能够大幅增加输出阻抗,同时改善失配,并且只需要250 mV的电源。
{"title":"A sub-threshold halo implanted MOS implementation of an electronic neuron","authors":"Odilon O. Dutra, Gustavo D. Colleta, L. H. C. Ferreira, T. Pimenta","doi":"10.1109/ICM.2013.6734979","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734979","url":null,"abstract":"This work describes a current mode implementation of Izhikevich neuron model designed with 130 nm halo implanted devices structured within matrices of order m × n capable of substantially increasing output impedance while also improving mismatch and requiring a power supply of only 250 mV.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"942 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127008311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient hardware architecture for direct 2D DCT computation and its FPGA implementation 二维DCT直接计算的高效硬件架构及其FPGA实现
Pub Date : 2013-12-01 DOI: 10.1109/ICM.2013.6734995
A. Hatim, S. Belkouch, T. Sadiki, M. Hassani
In this paper, we propose a low complexity architecture for direct 2D-DCT computation. The architecture will transform the pixels from spatial to spectral domain with the required quality constraints of the compression standards. In our previous works we introduced a new fast 2D_DCT with low computations: only 40 additions are used and no multiplications are needed. Based on that algorithm we developed in this work a new architecture to achieve the computations of the 2D DCT directly without using any transposition memory. We defined Sk functions blocks to build the 2D DCT architecture. The Sk block perform 8 function depending on the control signals of the system. The number of additions/subtractions used is 63, but no multiplication or memory transposition is needed. The architecture is suitable for usage with statistical rules to predict the zero quantized coefficients, which can considerably reduce the number of computation. We implemented the design using an FPGA Cyclone 3. The design can reach up to 244 MHz and uses 1188 logic elements, and it respect the real time video requirements.
在本文中,我们提出了一种用于直接2D-DCT计算的低复杂度架构。该架构将在压缩标准要求的质量约束下将像素从空间域转换到光谱域。在我们之前的工作中,我们介绍了一种新的快速2D_DCT,计算量低:只使用40个加法,不需要乘法。基于该算法,我们在这项工作中开发了一种新的架构,可以直接实现二维DCT的计算,而不使用任何转置存储器。我们定义了Sk函数块来构建二维DCT体系结构。Sk块根据系统的控制信号执行8个功能。使用的加减法的数量是63,但不需要乘法或内存调换。该体系结构适合与统计规则一起使用来预测零量化系数,从而大大减少了计算量。我们使用FPGA Cyclone 3实现了该设计。该设计最高可达244mhz,使用1188个逻辑元件,满足实时视频的要求。
{"title":"Efficient hardware architecture for direct 2D DCT computation and its FPGA implementation","authors":"A. Hatim, S. Belkouch, T. Sadiki, M. Hassani","doi":"10.1109/ICM.2013.6734995","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734995","url":null,"abstract":"In this paper, we propose a low complexity architecture for direct 2D-DCT computation. The architecture will transform the pixels from spatial to spectral domain with the required quality constraints of the compression standards. In our previous works we introduced a new fast 2D_DCT with low computations: only 40 additions are used and no multiplications are needed. Based on that algorithm we developed in this work a new architecture to achieve the computations of the 2D DCT directly without using any transposition memory. We defined Sk functions blocks to build the 2D DCT architecture. The Sk block perform 8 function depending on the control signals of the system. The number of additions/subtractions used is 63, but no multiplication or memory transposition is needed. The architecture is suitable for usage with statistical rules to predict the zero quantized coefficients, which can considerably reduce the number of computation. We implemented the design using an FPGA Cyclone 3. The design can reach up to 244 MHz and uses 1188 logic elements, and it respect the real time video requirements.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125684672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Field plate termination for high voltage diamond Schottky diode 高压金刚石肖特基二极管的场极板端接
Pub Date : 2013-12-01 DOI: 10.1109/ICM.2013.6735017
H. Arbess, K. Isoird
New field plate architecture is applied to pseudo vertical diamond Schottky diode. New topology structure has been proposed and simulated using Sentaurus TCAD simulation in order to minimize the maximum electric field in the dielectric at high voltage operation. Firstly and after simple variations in the field plate architecture, the breakdown voltage was improved from 1632 V to 2141 V at 700 K. Concerning Emax in the dielectric, we obtained high decreasing of the maximum electric field following the policy of pressure distribution.
将新型场极板结构应用于拟垂直菱形肖特基二极管。为了使介质在高压下的最大电场最小,提出了一种新的拓扑结构,并利用Sentaurus TCAD仿真进行了仿真。首先,通过对场极板结构的简单改变,击穿电压从1632 V提高到700 K时的2141 V。对于介电介质中的Emax,我们得到了最大电场随压力分布规律的大幅度减小。
{"title":"Field plate termination for high voltage diamond Schottky diode","authors":"H. Arbess, K. Isoird","doi":"10.1109/ICM.2013.6735017","DOIUrl":"https://doi.org/10.1109/ICM.2013.6735017","url":null,"abstract":"New field plate architecture is applied to pseudo vertical diamond Schottky diode. New topology structure has been proposed and simulated using Sentaurus TCAD simulation in order to minimize the maximum electric field in the dielectric at high voltage operation. Firstly and after simple variations in the field plate architecture, the breakdown voltage was improved from 1632 V to 2141 V at 700 K. Concerning Emax in the dielectric, we obtained high decreasing of the maximum electric field following the policy of pressure distribution.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126240588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design and implementation of an FPGA-based 1oo4-architecture for safety-related system-on-chips 一种基于fpga的芯片上系统架构的设计与实现
Pub Date : 2013-12-01 DOI: 10.1109/ICM.2013.6734967
A. Hayek, Moneer Al-Bokhaiti, J. Borcsok
FPGAs introduce a very attractive platform for the designing process of complex embedded systems. The complexity of these systems should be controlled to fulfill high demands and requirements, especially in safety-related applications, where aspects like reliability, availability and safety are of the utmost significance. In this context, the present paper intends the design and implementation of a novel on-chip quadruple redundant safety-related system architecture (1oo4-architecture - one out of four) as a fault tolerant technique to increase the level of safety integrity, reliability and availability of electronic embedded systems. For this aim the 1oo4-architecture and their related safety characteristics are briefly demonstrated. The FPGA-based embedded system model of this novel architecture is developed and explained. The main part of this paper focuses on the safety-related implementation on FPGA. Finally, an evaluation of the implemented architecture concludes this paper.
fpga为复杂嵌入式系统的设计过程提供了一个非常有吸引力的平台。应控制这些系统的复杂性,以满足高要求和要求,特别是在与安全相关的应用中,可靠性、可用性和安全性等方面至关重要。在此背景下,本文打算设计和实现一种新的片上四重冗余安全相关系统架构(1004架构-四分之一)作为容错技术,以提高电子嵌入式系统的安全完整性,可靠性和可用性水平。为此,简要说明了1004结构及其相关的安全特性。提出并说明了基于fpga的嵌入式系统模型。本文的主要部分是在FPGA上的安全相关实现。最后,对实现的体系结构进行了评估。
{"title":"Design and implementation of an FPGA-based 1oo4-architecture for safety-related system-on-chips","authors":"A. Hayek, Moneer Al-Bokhaiti, J. Borcsok","doi":"10.1109/ICM.2013.6734967","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734967","url":null,"abstract":"FPGAs introduce a very attractive platform for the designing process of complex embedded systems. The complexity of these systems should be controlled to fulfill high demands and requirements, especially in safety-related applications, where aspects like reliability, availability and safety are of the utmost significance. In this context, the present paper intends the design and implementation of a novel on-chip quadruple redundant safety-related system architecture (1oo4-architecture - one out of four) as a fault tolerant technique to increase the level of safety integrity, reliability and availability of electronic embedded systems. For this aim the 1oo4-architecture and their related safety characteristics are briefly demonstrated. The FPGA-based embedded system model of this novel architecture is developed and explained. The main part of this paper focuses on the safety-related implementation on FPGA. Finally, an evaluation of the implemented architecture concludes this paper.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134549892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Fast-tracking delay-locked loop for UWB communication systems 用于超宽带通信系统的快速跟踪延时锁环
Pub Date : 2013-12-01 DOI: 10.1109/ICM.2013.6734971
Rshdee Alhakim, E. Simeu
Maintaining the synchronization between receiver and transmitter in the presence of Doppler effect is considered as a major challenge for ultra-wideband (UWB) communication systems. Delay-Locked Loop (DLL) method is widely proposed to keep the satisfactory synchronization. In this paper, we modify the structure of DLL, using Internal Model Control (IMC). Unfortunately, primary simulation results confirm that the IMC-DLL has a high opportunity to lose tracking in the presence of Doppler effect. In order to solve this problem, we develop the IMC tracking structure by adding an adaptive filter block, which has a simple structure: one addition and one division operators. The simulation results confirm that the proposed IMC-DLL has better transient response, compared with the classical DLL.
在多普勒效应存在的情况下,保持接收机和发射机之间的同步被认为是超宽带通信系统面临的主要挑战。延迟锁环(DLL)方法被广泛提出以保持良好的同步。本文采用内模控制(IMC)对DLL的结构进行了修改。不幸的是,初步模拟结果证实,在多普勒效应的存在下,IMC-DLL很有可能失去跟踪。为了解决这个问题,我们通过增加一个自适应滤波块来开发IMC跟踪结构,该结构简单:一个加法和一个除法算子。仿真结果表明,与经典动态链接库相比,本文提出的IMC-DLL具有更好的瞬态响应。
{"title":"Fast-tracking delay-locked loop for UWB communication systems","authors":"Rshdee Alhakim, E. Simeu","doi":"10.1109/ICM.2013.6734971","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734971","url":null,"abstract":"Maintaining the synchronization between receiver and transmitter in the presence of Doppler effect is considered as a major challenge for ultra-wideband (UWB) communication systems. Delay-Locked Loop (DLL) method is widely proposed to keep the satisfactory synchronization. In this paper, we modify the structure of DLL, using Internal Model Control (IMC). Unfortunately, primary simulation results confirm that the IMC-DLL has a high opportunity to lose tracking in the presence of Doppler effect. In order to solve this problem, we develop the IMC tracking structure by adding an adaptive filter block, which has a simple structure: one addition and one division operators. The simulation results confirm that the proposed IMC-DLL has better transient response, compared with the classical DLL.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134441055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2013 25th International Conference on Microelectronics (ICM)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1