Pub Date : 2013-12-01DOI: 10.1109/ICM.2013.6735009
H. Machado, L. Cicero, C. Tanougast, H. Ramenah, L. Siéler, P. Jean, P. Milhas, A. Dandache
Li-ion rechargeable batteries present an useful energy, low battery effect, and slow Self-discharge loss of charge when not in use. In this paper, we describe a VHDL-AMS model describing coupled electrical and thermal behaviors of a Li-Ion cell. This model relies on the experimental extraction of real characteristic parameters by using an efficient and low-cost test bench. Therefore, it allows to predict the realistic voltage variations by taking into account the state of charge and heating of the Li-ion cell, in order to design a battery system according the required capacity and electric power for the current electrical applications.
{"title":"VHDL-AMS electro-thermal modeling of a lithium-ion battery","authors":"H. Machado, L. Cicero, C. Tanougast, H. Ramenah, L. Siéler, P. Jean, P. Milhas, A. Dandache","doi":"10.1109/ICM.2013.6735009","DOIUrl":"https://doi.org/10.1109/ICM.2013.6735009","url":null,"abstract":"Li-ion rechargeable batteries present an useful energy, low battery effect, and slow Self-discharge loss of charge when not in use. In this paper, we describe a VHDL-AMS model describing coupled electrical and thermal behaviors of a Li-Ion cell. This model relies on the experimental extraction of real characteristic parameters by using an efficient and low-cost test bench. Therefore, it allows to predict the realistic voltage variations by taking into account the state of charge and heating of the Li-ion cell, in order to design a battery system according the required capacity and electric power for the current electrical applications.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129867933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICM.2013.6734992
Andrianiaina Ravelomanantsoa, H. Rabah, A. Rouane
Compressed sensing (CS) is applied in wireless body sensor network (WBSN) to reduce the data rate and minimize the power consumption of the sensor nodes. However, as the CS encoder and decoder are tightly coupled, a model of the overall acquisition chain is required in the first stages of development and validation. To overcome this issue, we propose a virtual prototyping of WBSN based on CS with SystemC-AMS 1.0. The proposed model consists of three sensor nodes which capture electrocardiogram (ECG), electromyogram (EMG) and respiration (RESP) signals. The proposed virtual prototype had allowed a functional verification of WBSN at system level and a rapid exploration of the impact of compression ratio on the quality of reconstruction. Results show how to tailor the measurement matrix for a best tradeoff between the compression ratio, the quality of reconstruction, and the energy consumption.
{"title":"SystemC-AMS based virtual prototyping of wireless body sensor network using compressed sensing","authors":"Andrianiaina Ravelomanantsoa, H. Rabah, A. Rouane","doi":"10.1109/ICM.2013.6734992","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734992","url":null,"abstract":"Compressed sensing (CS) is applied in wireless body sensor network (WBSN) to reduce the data rate and minimize the power consumption of the sensor nodes. However, as the CS encoder and decoder are tightly coupled, a model of the overall acquisition chain is required in the first stages of development and validation. To overcome this issue, we propose a virtual prototyping of WBSN based on CS with SystemC-AMS 1.0. The proposed model consists of three sensor nodes which capture electrocardiogram (ECG), electromyogram (EMG) and respiration (RESP) signals. The proposed virtual prototype had allowed a functional verification of WBSN at system level and a rapid exploration of the impact of compression ratio on the quality of reconstruction. Results show how to tailor the measurement matrix for a best tradeoff between the compression ratio, the quality of reconstruction, and the energy consumption.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129962915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICM.2013.6734957
E. Rachid
The release of an extremely wide spectrum of microwaves frequencies 60-100 GHz for commercial and others applications has greatly spurred the research and development of microwave ultra wideband (UWB) technology for communications, imaging, radar, and localization applications. In accordance, many techniques to broaden the impedance bandwidth of small antennas and to optimize the characteristics of the broadband antennas have been widely investigated. This article presents a new form of planar antennas based on an elementary form the butterfly and the antenna forms are the cascade of many butterflies. These antennas are simulated using the IE3D software from Zeeland and compared with the FEKO software.
{"title":"New antenna designs and forms for the band of 60–100 GHz","authors":"E. Rachid","doi":"10.1109/ICM.2013.6734957","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734957","url":null,"abstract":"The release of an extremely wide spectrum of microwaves frequencies 60-100 GHz for commercial and others applications has greatly spurred the research and development of microwave ultra wideband (UWB) technology for communications, imaging, radar, and localization applications. In accordance, many techniques to broaden the impedance bandwidth of small antennas and to optimize the characteristics of the broadband antennas have been widely investigated. This article presents a new form of planar antennas based on an elementary form the butterfly and the antenna forms are the cascade of many butterflies. These antennas are simulated using the IE3D software from Zeeland and compared with the FEKO software.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122980211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICM.2013.6734985
M. Hajj-Hassan, Hussein Hajj-Hassan, E. Ghafar-Zadeh
Direct interfacing with brain tissues for neuroscience, neural prosthetics, and local treatment of brain diseases necessitates the implantation of arrays of electrodes to stimulate, record electrical activity, and deliver drugs to specific locations in the brain. Here, we present novel elongated multi-modal neural microprobe capable of simultaneously recording the electrical activity of the brain and delivering drugs to the diagnosed location through polymeric microchannel embedded on top of the electrode. The functionality of the electrical part of the microprobe was tested in rats and high frequency spikes were recorded.
{"title":"Multi-modal neural microprobe integrating silicon microelectrodes and polymeric microchannels","authors":"M. Hajj-Hassan, Hussein Hajj-Hassan, E. Ghafar-Zadeh","doi":"10.1109/ICM.2013.6734985","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734985","url":null,"abstract":"Direct interfacing with brain tissues for neuroscience, neural prosthetics, and local treatment of brain diseases necessitates the implantation of arrays of electrodes to stimulate, record electrical activity, and deliver drugs to specific locations in the brain. Here, we present novel elongated multi-modal neural microprobe capable of simultaneously recording the electrical activity of the brain and delivering drugs to the diagnosed location through polymeric microchannel embedded on top of the electrode. The functionality of the electrical part of the microprobe was tested in rats and high frequency spikes were recorded.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"356 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123129728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICM.2013.6735005
A. Alaeddine, M. Kadi, H. Shall, B. Beydoun, K. Daoud
In this paper, the coupling phenomenon between the electromagnetic near-field stress and the micro-strip lines connecting the SiGe Heterojunction Bipolar Transistor (HBT), are evaluated by electromagnetic and electrical simulations. A complete electrical model of an electromagnetic near field setup is presented. Each part of this model (injection probe and Printed Circuit Board) are characterized and modeled thank to the ADS software. Comparisons are given between the induced voltage obtained by the electromagnetic simulator HFSS and the induced voltage obtained by using the electrical ADS model, validate the complete electrical model. The originality of this study comes from the generation of a localized electromagnetic field using the near field bench to investigate the reliability of the SiGe HBT. After stress the DC and the high-frequency characteristics are affected by aggression. The comparison between the Direct Power Injection and the near field stress effects indicates that the probe/micro-strip line coupling phenomenon is responsible for the near field stress effects.
{"title":"Modeling of the coupling phenomenon between a transmission line and a near-field excitation","authors":"A. Alaeddine, M. Kadi, H. Shall, B. Beydoun, K. Daoud","doi":"10.1109/ICM.2013.6735005","DOIUrl":"https://doi.org/10.1109/ICM.2013.6735005","url":null,"abstract":"In this paper, the coupling phenomenon between the electromagnetic near-field stress and the micro-strip lines connecting the SiGe Heterojunction Bipolar Transistor (HBT), are evaluated by electromagnetic and electrical simulations. A complete electrical model of an electromagnetic near field setup is presented. Each part of this model (injection probe and Printed Circuit Board) are characterized and modeled thank to the ADS software. Comparisons are given between the induced voltage obtained by the electromagnetic simulator HFSS and the induced voltage obtained by using the electrical ADS model, validate the complete electrical model. The originality of this study comes from the generation of a localized electromagnetic field using the near field bench to investigate the reliability of the SiGe HBT. After stress the DC and the high-frequency characteristics are affected by aggression. The comparison between the Direct Power Injection and the near field stress effects indicates that the probe/micro-strip line coupling phenomenon is responsible for the near field stress effects.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"407 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114003753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICM.2013.6734981
A. Benabdelmoumene, B. Djezzar, H. Tahi, A. Chenouf, Goudjil Mohamed, M. Kechouane
Using measure/stress/measure (MSM) protocol, Negative bias temperature instability (NBTI) has been investigated on P-and N-substrate MOS capacitors through flat band shift evolution. The same protocol on p-MOSFET's transistors, with different channel lengths, has been also examined through threshold voltage shift evolution. The results have shown that P-substrate MOS capacitors are more affected than N-substrate MOS capacitors. We have suggested that the amphoteric nature of interface traps and the positive nature of the oxide traps could explain this result. In addition, the exponent n is higher in N-substrate than in P-substrate capacitors. Higher the degradation is, lower n is. On the other hand, we have shown that P-doped lightly doped drain (LDD) and source/drain regions of p-MOSFET transistors are more affected than the middle of the channel under NBTI stress conditions. These results point out the influence of the Boron doping on the NBTI degradation. Also, this behavior suggests that the generation mechanism in the edge region is different from that in the channel region.
{"title":"Investigating the NBTI effect on P- and N-substrate MOS capacitors and p-MOSFET transistors","authors":"A. Benabdelmoumene, B. Djezzar, H. Tahi, A. Chenouf, Goudjil Mohamed, M. Kechouane","doi":"10.1109/ICM.2013.6734981","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734981","url":null,"abstract":"Using measure/stress/measure (MSM) protocol, Negative bias temperature instability (NBTI) has been investigated on P-and N-substrate MOS capacitors through flat band shift evolution. The same protocol on p-MOSFET's transistors, with different channel lengths, has been also examined through threshold voltage shift evolution. The results have shown that P-substrate MOS capacitors are more affected than N-substrate MOS capacitors. We have suggested that the amphoteric nature of interface traps and the positive nature of the oxide traps could explain this result. In addition, the exponent n is higher in N-substrate than in P-substrate capacitors. Higher the degradation is, lower n is. On the other hand, we have shown that P-doped lightly doped drain (LDD) and source/drain regions of p-MOSFET transistors are more affected than the middle of the channel under NBTI stress conditions. These results point out the influence of the Boron doping on the NBTI degradation. Also, this behavior suggests that the generation mechanism in the edge region is different from that in the channel region.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"16 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120877012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICM.2013.6735003
Niveen Nasr Morsi, M. B. Abdelhalim, K. Shehata
In this paper, we present implementation of object tracking system targeting video sequence based on Particle Swarm Optimization (PSO) using Structural SIMilarity index (SSIM) as PSO's fitness function on field programmable gate array (FPGA). The proposed algorithm's performance has been tested and evaluated over different video sequences, showing its adaption for tracking in real-time. After presenting PSO algorithm and SSIM index, we show how the system's architecture has been simplified for FPGA implementation and achieved better results than its software implementation counterpart.
{"title":"FPGA implementation of PSO-based object tracking system using SSIM","authors":"Niveen Nasr Morsi, M. B. Abdelhalim, K. Shehata","doi":"10.1109/ICM.2013.6735003","DOIUrl":"https://doi.org/10.1109/ICM.2013.6735003","url":null,"abstract":"In this paper, we present implementation of object tracking system targeting video sequence based on Particle Swarm Optimization (PSO) using Structural SIMilarity index (SSIM) as PSO's fitness function on field programmable gate array (FPGA). The proposed algorithm's performance has been tested and evaluated over different video sequences, showing its adaption for tracking in real-time. After presenting PSO algorithm and SSIM index, we show how the system's architecture has been simplified for FPGA implementation and achieved better results than its software implementation counterpart.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"10 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117231536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICM.2013.6735021
M. Boutalbi, M. Frihi, S. Toumi, C. Tanougast, C. Killian, A. Chaddad, A. Dandache
This paper proposes a new reliable router allowing accurate online error detections in dynamic Network on Chip (NoC). The proposed router has the capability to detect and localize accurately inner or outer data packet errors of the router while distinguish between temporary and permanently errors. The error detection mechanisms of the proposed switches and advantages with regards to the other main already proposed router approaches are detailed while proving the feasibility and efficiency through several simulations online detection cases. Performance evaluation and FPGA implementation results are also given.
{"title":"Reliable router for accurate online error detection in dynamic Network on Chip","authors":"M. Boutalbi, M. Frihi, S. Toumi, C. Tanougast, C. Killian, A. Chaddad, A. Dandache","doi":"10.1109/ICM.2013.6735021","DOIUrl":"https://doi.org/10.1109/ICM.2013.6735021","url":null,"abstract":"This paper proposes a new reliable router allowing accurate online error detections in dynamic Network on Chip (NoC). The proposed router has the capability to detect and localize accurately inner or outer data packet errors of the router while distinguish between temporary and permanently errors. The error detection mechanisms of the proposed switches and advantages with regards to the other main already proposed router approaches are detailed while proving the feasibility and efficiency through several simulations online detection cases. Performance evaluation and FPGA implementation results are also given.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133537011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICM.2013.6735019
B. Fahs, Ali Hage-Diab, A. Harb
This paper presents a compact and power efficient ultra-violet (UV) dosimeter design. The compact design is achieved by incorporating the principal dosimeter functions onto a CMOS integrated chip. Besides, the external components are arranged in order to minimize the global board BoM (Bill of Materials). On the power consumption side, the CMOS integration aims to reduce the maximum power consumption levels. In addition, a regular sleep/wake-up technique is employed to further decrease the global average power consumption. The high-power blocks are driven by a variable duty-cycle integrated oscillator and turned ON only during short time slots. The device is powered by a primary solar rechargeable battery and a secondary standard emergency battery. The emergency battery is only used when the rechargeable battery gets unable to supply the circuit. The proposed solution aims to prevent any battery replacement during the life-time of the product. An external tri-color LED indicates the skin exposure risk level to UV rays.
{"title":"A compact and power efficient UV dosimeter design","authors":"B. Fahs, Ali Hage-Diab, A. Harb","doi":"10.1109/ICM.2013.6735019","DOIUrl":"https://doi.org/10.1109/ICM.2013.6735019","url":null,"abstract":"This paper presents a compact and power efficient ultra-violet (UV) dosimeter design. The compact design is achieved by incorporating the principal dosimeter functions onto a CMOS integrated chip. Besides, the external components are arranged in order to minimize the global board BoM (Bill of Materials). On the power consumption side, the CMOS integration aims to reduce the maximum power consumption levels. In addition, a regular sleep/wake-up technique is employed to further decrease the global average power consumption. The high-power blocks are driven by a variable duty-cycle integrated oscillator and turned ON only during short time slots. The device is powered by a primary solar rechargeable battery and a secondary standard emergency battery. The emergency battery is only used when the rechargeable battery gets unable to supply the circuit. The proposed solution aims to prevent any battery replacement during the life-time of the product. An external tri-color LED indicates the skin exposure risk level to UV rays.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114316377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/ICM.2013.6734961
M. Tabaa, C. Diou, M. El Aroussi, B. Chouri, A. Dandache
Ultra-wideband (UWB) technology for the localization of wireless sensor networks has received considerable attention last few years. This technology is dedicated for indoor localization using a fine delay of resolution and obstacle-penetration capabilities. A lot of challenges remain before implementation of UWB can be deployed on a large scale like non-line-of-sight (NLOS which is especially critical for most location-based applications because the NLOS propagation introduces positive bias in the estimation of distance, which can seriously affect the performance of localization.In this paper, we present a technique for identifying between both line-of-sight(LOS) and non-line-of-sight (NLOS) contexts based on stable distribution parameters using SVM (Support Vector Machine) methods for classification. This characterization was applied to UWB measurements collected from whyless.com project by the IMST group, over bandwidth of 10 GHz.
{"title":"LOS and NLOS identification based on UWB stable distribution","authors":"M. Tabaa, C. Diou, M. El Aroussi, B. Chouri, A. Dandache","doi":"10.1109/ICM.2013.6734961","DOIUrl":"https://doi.org/10.1109/ICM.2013.6734961","url":null,"abstract":"Ultra-wideband (UWB) technology for the localization of wireless sensor networks has received considerable attention last few years. This technology is dedicated for indoor localization using a fine delay of resolution and obstacle-penetration capabilities. A lot of challenges remain before implementation of UWB can be deployed on a large scale like non-line-of-sight (NLOS which is especially critical for most location-based applications because the NLOS propagation introduces positive bias in the estimation of distance, which can seriously affect the performance of localization.In this paper, we present a technique for identifying between both line-of-sight(LOS) and non-line-of-sight (NLOS) contexts based on stable distribution parameters using SVM (Support Vector Machine) methods for classification. This characterization was applied to UWB measurements collected from whyless.com project by the IMST group, over bandwidth of 10 GHz.","PeriodicalId":372346,"journal":{"name":"2013 25th International Conference on Microelectronics (ICM)","volume":"67 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132738850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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