Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186190
Kunhee Han, L. Guo, N. Shepherd, M. Tao
A low-cost transparent conducting oxide (TCO) suitable for terawatt-scale solar cells is reported. The zinc oxide TCO is prepared by spray pyrolysis deposition and is doped with an abundant group IIIB element, yttrium (ZnO:Y). The deposition was carried out at 475°C on quartz substrate. The dependence of the electrical, structural and optical properties of ZnO:Y on deposition and post-annealing conditions was investigated. The important variables for low-resistivity ZnO:Y include Y concentration in the spray solution, post-annealing ambient and type of solvent. The lowest resistivity obtained so far is 1.14×10−2 Ω-cm for a ZnO:Y film deposited from a solution containing 100 mM Zn precursor, 0.4 mM Y precursor, methanol as the solvent, and post-annealed in vacuum at 500°C for 60 minutes. The transmittance of ZnO:Y is high above 85% in the visible range. The Zn/O ratio in ZnO:Y and its correlation to the resistivity of ZnO:Y suggest that Zn interstitials and O vacancies play a significant role in controlling the electrical properties of ZnO:Y.
报道了一种适用于太瓦太阳能电池的低成本透明导电氧化物(TCO)。采用喷雾热解沉积法制备氧化锌TCO，并掺杂丰富的IIIB族元素钇(ZnO:Y)。沉积温度为475℃，在石英衬底上进行。研究了ZnO:Y的电学、结构和光学性质与沉积和退火条件的关系。影响ZnO:Y低电阻率的重要因素包括喷涂溶液中的Y浓度、退火后的环境和溶剂类型。在含有100 mM Zn前驱体和0.4 mM Y前驱体的溶液中，以甲醇为溶剂，在500℃真空退火60分钟后，制备的ZnO:Y薄膜的电阻率最低为1.14×10−2 Ω-cm。ZnO:Y在可见光范围内的透过率高达85%以上。ZnO:Y中的Zn/O比值及其与ZnO:Y电阻率的相关性表明，Zn空隙和O空位对ZnO:Y的电学性能起着重要的控制作用。
{"title":"Electrical and optical properties of yttrium-doped zinc oxide by spray pyrolysis for solar cell applications","authors":"Kunhee Han, L. Guo, N. Shepherd, M. Tao","doi":"10.1109/PVSC.2011.6186190","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186190","url":null,"abstract":"A low-cost transparent conducting oxide (TCO) suitable for terawatt-scale solar cells is reported. The zinc oxide TCO is prepared by spray pyrolysis deposition and is doped with an abundant group IIIB element, yttrium (ZnO:Y). The deposition was carried out at 475°C on quartz substrate. The dependence of the electrical, structural and optical properties of ZnO:Y on deposition and post-annealing conditions was investigated. The important variables for low-resistivity ZnO:Y include Y concentration in the spray solution, post-annealing ambient and type of solvent. The lowest resistivity obtained so far is 1.14×10−2 Ω-cm for a ZnO:Y film deposited from a solution containing 100 mM Zn precursor, 0.4 mM Y precursor, methanol as the solvent, and post-annealed in vacuum at 500°C for 60 minutes. The transmittance of ZnO:Y is high above 85% in the visible range. The Zn/O ratio in ZnO:Y and its correlation to the resistivity of ZnO:Y suggest that Zn interstitials and O vacancies play a significant role in controlling the electrical properties of ZnO:Y.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121065546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186423
A. Cronin, J. Castillo, P. Hauser, Glenn Rosenberg, Rakesh Kumar, R. Kostuk, Deming Zhang, J. Russo, S. Vorndran, V. Lonij, James B. Greenberg, A. Brooks
Holographic concentrators incorporated into PV modules were used to build a 1600 W grid-tied PV system at the Tucson Electric Power solar test yard. Holograms in concentrating photovoltaic (CPV) modules diffract light to increase irradiance on PV cells within each module. No tracking is needed for low concentration ratios, and the holographic elements are significantly less expensive than the PV cells. Additional advantages include bi-facial acceptance of light, reduced operating temperature, and increased cell efficiency. These benefits are expected to result in higher energy yields [kwh] per unit cost. Field tests of the holographic concentrator system are reported here. A performance ratio greater than 1 was observed. The field tests include comparison with other flat plate non-tracking PV systems at the same test yard. Predicted yields are also compared with the data.
{"title":"Holographic CPV field tests at the Tucson Electric Power solar test yard","authors":"A. Cronin, J. Castillo, P. Hauser, Glenn Rosenberg, Rakesh Kumar, R. Kostuk, Deming Zhang, J. Russo, S. Vorndran, V. Lonij, James B. Greenberg, A. Brooks","doi":"10.1109/PVSC.2011.6186423","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186423","url":null,"abstract":"Holographic concentrators incorporated into PV modules were used to build a 1600 W grid-tied PV system at the Tucson Electric Power solar test yard. Holograms in concentrating photovoltaic (CPV) modules diffract light to increase irradiance on PV cells within each module. No tracking is needed for low concentration ratios, and the holographic elements are significantly less expensive than the PV cells. Additional advantages include bi-facial acceptance of light, reduced operating temperature, and increased cell efficiency. These benefits are expected to result in higher energy yields [kwh] per unit cost. Field tests of the holographic concentrator system are reported here. A performance ratio greater than 1 was observed. The field tests include comparison with other flat plate non-tracking PV systems at the same test yard. Predicted yields are also compared with the data.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121205649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6185898
R. Schropp, J. Rath, L. T. Yan
We have investigated the properties of ITiO (Indium Titanium Oxide) as an alternative to the more commonly used TCO's, such as ITO (Indium Tin Oxide), ZnO:Al, and SnO2:F. We have found that a mobility of 50 cm2/Vs could be reached at a consistently low sheet resistivity of < 3×104 Ωcm. The result is that the transmission exceeds 75% up to a wavelength of 1450 nm (0.85 eV), which constitutes a major improvement over conventional TCO's that commonly show a sharp transmission drop at 950 nm.
{"title":"High mobility transparent conductive Oxide for low bandgap solar cells","authors":"R. Schropp, J. Rath, L. T. Yan","doi":"10.1109/PVSC.2011.6185898","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185898","url":null,"abstract":"We have investigated the properties of ITiO (Indium Titanium Oxide) as an alternative to the more commonly used TCO's, such as ITO (Indium Tin Oxide), ZnO:Al, and SnO2:F. We have found that a mobility of 50 cm2/Vs could be reached at a consistently low sheet resistivity of < 3×104 Ωcm. The result is that the transmission exceeds 75% up to a wavelength of 1450 nm (0.85 eV), which constitutes a major improvement over conventional TCO's that commonly show a sharp transmission drop at 950 nm.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121208601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186298
Chris Yang, Yury B. Pyekh, S. Danyluk
This paper describes measurements of the surface potential (SP) of silicon surfaces that contain cracks. The impact of cracks on the PV performance is also discussed using light illumination as compared to the dark condition. The surface potential was measured using the Kelvin probe technique, in both vibrating and non-vibrating modes, and the data were collected on bare silicon wafers and monocrystalline PV cells. It is found that there is almost no surface depletion on the newly cracked interfaces, which is different from the uncracked surface. The electrical field discontinuity at the crack surface brings about contact potential difference (CPD) signals in the non-vibrating mode. The SP at the crack surfaces is reversible and experimentally measured to be 23mV and 44mV for the light and dark conditions respectively. There is a decreasing surface potential at the cracks in the PV cells, which is similar to that on bare silicon wafers. The SP in a PV cell is normally at 4.6 to 4.8V in the dark condition, but only at about 4.4V at a crack. The impact of the cracks in PV cells varies with the status of the surface, which may behave as an open circuit or a current drain. The average of SP difference between the light and dark conditions in a PV cell is at 350mV. However, the SP difference reduces to 250mV at an open crack or less than 70mV at a shunted crack. The cracks in PV cells would lead to a power loss in both cases.
{"title":"Crack induced surface potential variation on Si PV cells","authors":"Chris Yang, Yury B. Pyekh, S. Danyluk","doi":"10.1109/PVSC.2011.6186298","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186298","url":null,"abstract":"This paper describes measurements of the surface potential (SP) of silicon surfaces that contain cracks. The impact of cracks on the PV performance is also discussed using light illumination as compared to the dark condition. The surface potential was measured using the Kelvin probe technique, in both vibrating and non-vibrating modes, and the data were collected on bare silicon wafers and monocrystalline PV cells. It is found that there is almost no surface depletion on the newly cracked interfaces, which is different from the uncracked surface. The electrical field discontinuity at the crack surface brings about contact potential difference (CPD) signals in the non-vibrating mode. The SP at the crack surfaces is reversible and experimentally measured to be 23mV and 44mV for the light and dark conditions respectively. There is a decreasing surface potential at the cracks in the PV cells, which is similar to that on bare silicon wafers. The SP in a PV cell is normally at 4.6 to 4.8V in the dark condition, but only at about 4.4V at a crack. The impact of the cracks in PV cells varies with the status of the surface, which may behave as an open circuit or a current drain. The average of SP difference between the light and dark conditions in a PV cell is at 350mV. However, the SP difference reduces to 250mV at an open crack or less than 70mV at a shunted crack. The cracks in PV cells would lead to a power loss in both cases.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127180417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6185953
V. Deprédurand, Y. Aida, J. Larsen, T. Eisenbarth, A. Majerus, S. Siebentritt
High-efficiency devices based on Cu(In, Ga)Se2 (CIGS) use an overall Cu-poor absorber. However, all the electronic properties (defect densities, transport properties, bulk recombination) are better in material that was grown under Cu-excess. Therefore the objective of this work is to make even better solar cells from "Cu-rich" absorbers. In all Cu-poor chalcopyrite based solar cells, the limiting factor for the open circuit voltage is the recombination in the space charge region whereas for the ones based on "Cu-rich" absorbers it is dominated by recombination at the interface. In this work, pure CuInSe2 (CIS) absorbers without Ga are grown under Cu-excess by coevaporation. After removal of the CuxSe secondary phase we obtain single phase material. In order to achieve interfaces that do not dominate the recombination, the surface was made Cu-poor by deposition of indium and Se and annealing in selenium vapor. The cell performance was remarkably improved by using this surface treatment and a 13% efficient solar cell was achieved using "Cu-rich" absorbers compared to 14% achieved with Cu-poor absorbers in a standard 3-stage process. In addition to classical characterization of the cell (IV and IVT, QE), the electronic structure of the surfaces and interfaces are investigated by photoluminescence, Auger electron spectroscopy and capacitance-voltage measurements, which show that it is indeed possible to keep a stoichiometric absorber while making the surface Cu-poor.
{"title":"Surface treatment of CIS solar cells grown under Cu-excess","authors":"V. Deprédurand, Y. Aida, J. Larsen, T. Eisenbarth, A. Majerus, S. Siebentritt","doi":"10.1109/PVSC.2011.6185953","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185953","url":null,"abstract":"High-efficiency devices based on Cu(In, Ga)Se2 (CIGS) use an overall Cu-poor absorber. However, all the electronic properties (defect densities, transport properties, bulk recombination) are better in material that was grown under Cu-excess. Therefore the objective of this work is to make even better solar cells from \"Cu-rich\" absorbers. In all Cu-poor chalcopyrite based solar cells, the limiting factor for the open circuit voltage is the recombination in the space charge region whereas for the ones based on \"Cu-rich\" absorbers it is dominated by recombination at the interface. In this work, pure CuInSe2 (CIS) absorbers without Ga are grown under Cu-excess by coevaporation. After removal of the CuxSe secondary phase we obtain single phase material. In order to achieve interfaces that do not dominate the recombination, the surface was made Cu-poor by deposition of indium and Se and annealing in selenium vapor. The cell performance was remarkably improved by using this surface treatment and a 13% efficient solar cell was achieved using \"Cu-rich\" absorbers compared to 14% achieved with Cu-poor absorbers in a standard 3-stage process. In addition to classical characterization of the cell (IV and IVT, QE), the electronic structure of the surfaces and interfaces are investigated by photoluminescence, Auger electron spectroscopy and capacitance-voltage measurements, which show that it is indeed possible to keep a stoichiometric absorber while making the surface Cu-poor.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125096733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Utilizing plasmonic metal nanoparticles is considered as one of the promising methods for increasing the conversion efficiency in thin film organic solar cells. However, the bare metal nanoparticles may suffer from the energy loss introduced by themselves due to the recombination of electro-hole pairs. In this paper, the optical absorption enhancement of thin film organic solar cells with plasmonic metal-dielectric core-shell nano-particles in the active layer has been proposed and studied. It is expected that the metal core could increase the optical absorption, and consequently the conversion efficiency of thin film organic solar cells due to the localized surface plasmon based field enhancement effect, and meanwhile the dielectric shell could prevent the metal core becoming a new bulk recombination center of the light-induced excitons. Simulations are carried out by means of the finite element method in a three-dimensional model. The results show that the absorption enhancement up to 110% could be obtained when the active layer thickness is 30nm. And there is a largest thickness for the active layer, below which plasmonic metal-dielectric core-shell nanoparticles are available for increasing the light absorption of thin film organic solar cells. Then, some initial experiments have been done. The Au-citrate core-shell nanoparticles synthesized by the sodium citrate reduction method are deposited on the wafer-based silicon solar cells. And the obvious photocurrent enhancement has been observed.
{"title":"Plasmonic core-shell nanoparticle enhanced optical absorption in thin film organic solar cells","authors":"Di Qu, Fang Liu, Xujie Pan, Jiafan Yu, Xiangdong Li, Wanlu Xie, Qi Xu, Yidong Huang","doi":"10.1109/PVSC.2011.6186103","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186103","url":null,"abstract":"Utilizing plasmonic metal nanoparticles is considered as one of the promising methods for increasing the conversion efficiency in thin film organic solar cells. However, the bare metal nanoparticles may suffer from the energy loss introduced by themselves due to the recombination of electro-hole pairs. In this paper, the optical absorption enhancement of thin film organic solar cells with plasmonic metal-dielectric core-shell nano-particles in the active layer has been proposed and studied. It is expected that the metal core could increase the optical absorption, and consequently the conversion efficiency of thin film organic solar cells due to the localized surface plasmon based field enhancement effect, and meanwhile the dielectric shell could prevent the metal core becoming a new bulk recombination center of the light-induced excitons. Simulations are carried out by means of the finite element method in a three-dimensional model. The results show that the absorption enhancement up to 110% could be obtained when the active layer thickness is 30nm. And there is a largest thickness for the active layer, below which plasmonic metal-dielectric core-shell nanoparticles are available for increasing the light absorption of thin film organic solar cells. Then, some initial experiments have been done. The Au-citrate core-shell nanoparticles synthesized by the sodium citrate reduction method are deposited on the wafer-based silicon solar cells. And the obvious photocurrent enhancement has been observed.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125164449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yellowing of modules represents the most evident visual defect. It appears on 98% of the plant modules and, for 63% of panels, it strongly covers their entire background tedlar. In order to see if this yellowing effects the output of the modules the surface oxidation composition and thickness were measured. This letter reports how AUO solar utilizes Highly Accelerated & Humidity Stress Test (HAST) to determine ribbon yellowing effect, and the expected surface oxidation composition. In the same time we identify the surface oxidation rate. The result indicates that ribbon yellowness is a result of surface oxidation, and the yellow appearance is only a cosmetic issue. Lead-free ribbons are more vulnerable to yellowing because lead does not build oxides, only Tin does. The higher concentration of Tin in lead-free solder suggests it will exhibit yellowing relatively faster and easier.
{"title":"Assessing the reliability and degradation of ribbon in photovoltaic module","authors":"Chiu-Hua Huang, Liu-De Chih, Yi-Chia Chen, Ming-Yuan Huang, Zhen-Cheng Wu, Shyuan-Jeng Ho","doi":"10.1109/PVSC.2011.6186609","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186609","url":null,"abstract":"Yellowing of modules represents the most evident visual defect. It appears on 98% of the plant modules and, for 63% of panels, it strongly covers their entire background tedlar. In order to see if this yellowing effects the output of the modules the surface oxidation composition and thickness were measured. This letter reports how AUO solar utilizes Highly Accelerated & Humidity Stress Test (HAST) to determine ribbon yellowing effect, and the expected surface oxidation composition. In the same time we identify the surface oxidation rate. The result indicates that ribbon yellowness is a result of surface oxidation, and the yellow appearance is only a cosmetic issue. Lead-free ribbons are more vulnerable to yellowing because lead does not build oxides, only Tin does. The higher concentration of Tin in lead-free solder suggests it will exhibit yellowing relatively faster and easier.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125869352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186633
P. Mints
Significant downward price pressure on photovoltaic markets by virtue of decelerating incentives, aggressive pricing for share and public perceptions of high cost are squeezing margins for technology manufacturers. It is not widely known or understood how, historically, margin pressure and unprofitability have accompanied research and development progress, and the significant progress that has been made despite these pressures. This paper will chart and provide analysis of growth for photovoltaic technologies from 1974 through 2010, including five and ten year forecasts for applications and markets also studying pricing over time. The price analysis will study the difference in prices between c-Si and thin film technologies (area penalty paid by thin films), along with assessing whether or not there is a true price premium for high efficiency technologies. The paper will conclude with an assessment of the changing incentive landscape, and the potential for lower cost along with comfortable margins going forward in the multi-gigawatt market for photovoltaic technologies.
{"title":"Thin film and crystalline technology competitiveness, past, present and future forecast","authors":"P. Mints","doi":"10.1109/PVSC.2011.6186633","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186633","url":null,"abstract":"Significant downward price pressure on photovoltaic markets by virtue of decelerating incentives, aggressive pricing for share and public perceptions of high cost are squeezing margins for technology manufacturers. It is not widely known or understood how, historically, margin pressure and unprofitability have accompanied research and development progress, and the significant progress that has been made despite these pressures. This paper will chart and provide analysis of growth for photovoltaic technologies from 1974 through 2010, including five and ten year forecasts for applications and markets also studying pricing over time. The price analysis will study the difference in prices between c-Si and thin film technologies (area penalty paid by thin films), along with assessing whether or not there is a true price premium for high efficiency technologies. The paper will conclude with an assessment of the changing incentive landscape, and the potential for lower cost along with comfortable margins going forward in the multi-gigawatt market for photovoltaic technologies.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123277523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186223
Shubha Gupta, B. Hoex, F. Lin, T. Mueller, A. Aberle
High-quality surface passivation is realized with plasma silicon nitride films deposited dynamically in an industrial microwave-powered plasma-enhanced chemical vapor deposition reactor. For low-resistivity p-Si wafers symmetrically passivated by as-deposited nearly-stoichiometric (n = 2.05) nitride films, we reach effective carrier lifetimes of up to 800 μs, increasing to up to 1800 μs for samples passivated by silicon-rich nitride films (n = 2.5). This corresponds to excellent surface recombination velocities of less than 14 and 4 cm/s, respectively, assuming a bulk carrier lifetime of 3.38 ms. Such levels of silicon surface passivation with plasma silicon nitride have previously only been possible with static laboratory systems.
{"title":"High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD","authors":"Shubha Gupta, B. Hoex, F. Lin, T. Mueller, A. Aberle","doi":"10.1109/PVSC.2011.6186223","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186223","url":null,"abstract":"High-quality surface passivation is realized with plasma silicon nitride films deposited dynamically in an industrial microwave-powered plasma-enhanced chemical vapor deposition reactor. For low-resistivity p-Si wafers symmetrically passivated by as-deposited nearly-stoichiometric (n = 2.05) nitride films, we reach effective carrier lifetimes of up to 800 μs, increasing to up to 1800 μs for samples passivated by silicon-rich nitride films (n = 2.5). This corresponds to excellent surface recombination velocities of less than 14 and 4 cm/s, respectively, assuming a bulk carrier lifetime of 3.38 ms. Such levels of silicon surface passivation with plasma silicon nitride have previously only been possible with static laboratory systems.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123412038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186640
H. Ullal, R. Mitchell, B. Keyes, K. VanSant, B. von Roedern, M. Symko-Davies, V. Kane
In this paper, we report on the major accomplishments of the U.S. Department of Energy's (DOE) Solar Energy Technologies Program (SETP) Photovoltaic (PV) Technology Incubator project. The Incubator project facilitates a company's transition from developing a solar cell or PV module prototype to pilot- and large-scale U.S. manufacturing. The project targets small businesses that have demonstrated proof-of-concept devices or processes in the laboratory. Their success supports U.S. Secretary of Energy Steven Chu's SunShot Initiative, which seeks to achieve PV technologies that are cost-competitive without subsidies at large scale with fossil-based energy sources by the end of this decade. The Incubator Project has enhanced U.S. PV manufacturing capacity and created more than 1200 clean energy jobs, resulting in an increase in American economic competitiveness. The investment raised to date by these PV Incubator companies as a result of DOE's $ 59 million investment total nearly $ 1.3 billion.
{"title":"Progress of the PV Technology Incubator project towards an enhanced U.S. manufacturing base","authors":"H. Ullal, R. Mitchell, B. Keyes, K. VanSant, B. von Roedern, M. Symko-Davies, V. Kane","doi":"10.1109/PVSC.2011.6186640","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186640","url":null,"abstract":"In this paper, we report on the major accomplishments of the U.S. Department of Energy's (DOE) Solar Energy Technologies Program (SETP) Photovoltaic (PV) Technology Incubator project. The Incubator project facilitates a company's transition from developing a solar cell or PV module prototype to pilot- and large-scale U.S. manufacturing. The project targets small businesses that have demonstrated proof-of-concept devices or processes in the laboratory. Their success supports U.S. Secretary of Energy Steven Chu's SunShot Initiative, which seeks to achieve PV technologies that are cost-competitive without subsidies at large scale with fossil-based energy sources by the end of this decade. The Incubator Project has enhanced U.S. PV manufacturing capacity and created more than 1200 clean energy jobs, resulting in an increase in American economic competitiveness. The investment raised to date by these PV Incubator companies as a result of DOE's $ 59 million investment total nearly $ 1.3 billion.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123785601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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