Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186620
H. Qasem, T. Betts, R. Gottschalg
The effect of dust on Cadmium-Telluride photovoltaic (PV) thin film modules is investigated by the application of a spatial 3 dimensional model developed with the circuit analysis software PSPICE. The effect of dust concentration and tilt angle variation on the PV module's performance was investigated. The probability of hotspots in different installation positions is investigated. The simulation results showed a reduction in the sample's performance with increased dust concentration and reduced tilt angle. The variation between cell positions showed that a horizontal orientation of the cells has an increased risk of hotspots with cells with localized lower parallel resistances than cells identified with uniform high parallel resistance.
{"title":"Effect of shading caused by dust on Cadmium Telluride photovoltaic modules","authors":"H. Qasem, T. Betts, R. Gottschalg","doi":"10.1109/PVSC.2011.6186620","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186620","url":null,"abstract":"The effect of dust on Cadmium-Telluride photovoltaic (PV) thin film modules is investigated by the application of a spatial 3 dimensional model developed with the circuit analysis software PSPICE. The effect of dust concentration and tilt angle variation on the PV module's performance was investigated. The probability of hotspots in different installation positions is investigated. The simulation results showed a reduction in the sample's performance with increased dust concentration and reduced tilt angle. The variation between cell positions showed that a horizontal orientation of the cells has an increased risk of hotspots with cells with localized lower parallel resistances than cells identified with uniform high parallel resistance.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"734 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122939523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186144
S. Wanka, D. Rychtarik, J. Muller, S. Geißler, P. Kappe, M. Spallek, Uli vom Bauer, C. Ludwig, P. Wawer
Single wafer identification is a mandatory element of a modern solar cell production [1]. It accelerates the efficiency roadmap of the solar cell and fosters the cost reduction roadmap of the fabrication. The laser marking concept Tra.Q creates an individual code on each and every wafer. This makes process optimization and quality control easier and faster. The solar cells are 100% traceable along the whole value chain [2–4]. Q-Cells has a broad experience of meanwhile 100 million solar cells, being fabricated in the Thalheim manufacturing line. A large statistical database is available. Typically, the code for the individual tracking is engraved onto the bare wafer before the manufacturing process. The big benefits of the single wafer identification are (a) faster learning in production, (b) steeper ramp curves for the introduction of innovations, (c) improved quality control of materials and of products from the suppliers, (d) enhanced transparency to the customer. The single wafer identification helps to make root cause analysis easier and faster and to nail down the key issues in a particular manufacturing site.
{"title":"Tra.Q — Laser marking for single wafer identification — Production experience from 100 million wafers","authors":"S. Wanka, D. Rychtarik, J. Muller, S. Geißler, P. Kappe, M. Spallek, Uli vom Bauer, C. Ludwig, P. Wawer","doi":"10.1109/PVSC.2011.6186144","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186144","url":null,"abstract":"Single wafer identification is a mandatory element of a modern solar cell production [1]. It accelerates the efficiency roadmap of the solar cell and fosters the cost reduction roadmap of the fabrication. The laser marking concept Tra.Q creates an individual code on each and every wafer. This makes process optimization and quality control easier and faster. The solar cells are 100% traceable along the whole value chain [2–4]. Q-Cells has a broad experience of meanwhile 100 million solar cells, being fabricated in the Thalheim manufacturing line. A large statistical database is available. Typically, the code for the individual tracking is engraved onto the bare wafer before the manufacturing process. The big benefits of the single wafer identification are (a) faster learning in production, (b) steeper ramp curves for the introduction of innovations, (c) improved quality control of materials and of products from the suppliers, (d) enhanced transparency to the customer. The single wafer identification helps to make root cause analysis easier and faster and to nail down the key issues in a particular manufacturing site.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"51 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114112720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186327
P. Engelhart, G. Zimmermann, C. Klenke, J. Wendt, T. Kaden, M. Junghanel, K. Suva, B. Barkenfelt, K. Petter, S. Hermann, S. Schmidt, D. Rychtarik, M. Fischer, J. Muller, P. Wawer
In this paper we report on latest results from our pilot production of multi-crystalline (mc) p-type Si cells in the Reiner-Lemoine Research Center at Q-Cells. The cells are double-side contacted and feature a lowly doped emitter, a fineline-printed Ag grid in combination with plating as front metallization and a dielectric passivated rear with local contacts. Using material based on Siemens and upgraded metallurgical grade (100% UMG) feedstock, we achieve stable median cell efficiencies of well above 18 % including the whole brick distribution. Top efficiencies exceeding 19 % (total area) are reached with a standard isotextured front and single anti-reflexion coating. In this work, we show the latest cell optimization progress corresponding to the front metallization process. Furthermore, we report on an independently confirmed cell efficiency of 19.5 % on a large-area multi-crystalline Si solar cell (243 cm2). This efficiency was achieved by implementing next generation process steps. To our knowledge, this result represents the highest energy conversion efficiencies on multi-crystalline Si material achieved so far.
{"title":"R&D pilot-line production of multi-crystalline Si solar cells with top efficiencies exceeding 19%","authors":"P. Engelhart, G. Zimmermann, C. Klenke, J. Wendt, T. Kaden, M. Junghanel, K. Suva, B. Barkenfelt, K. Petter, S. Hermann, S. Schmidt, D. Rychtarik, M. Fischer, J. Muller, P. Wawer","doi":"10.1109/PVSC.2011.6186327","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186327","url":null,"abstract":"In this paper we report on latest results from our pilot production of multi-crystalline (mc) p-type Si cells in the Reiner-Lemoine Research Center at Q-Cells. The cells are double-side contacted and feature a lowly doped emitter, a fineline-printed Ag grid in combination with plating as front metallization and a dielectric passivated rear with local contacts. Using material based on Siemens and upgraded metallurgical grade (100% UMG) feedstock, we achieve stable median cell efficiencies of well above 18 % including the whole brick distribution. Top efficiencies exceeding 19 % (total area) are reached with a standard isotextured front and single anti-reflexion coating. In this work, we show the latest cell optimization progress corresponding to the front metallization process. Furthermore, we report on an independently confirmed cell efficiency of 19.5 % on a large-area multi-crystalline Si solar cell (243 cm2). This efficiency was achieved by implementing next generation process steps. To our knowledge, this result represents the highest energy conversion efficiencies on multi-crystalline Si material achieved so far.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114393932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186624
W. Su, Yi-Chia Chen, Wen-Hsuan Liao, Chiu-Hua Huang, De-Chih Liu, Ming-Yuan Huang, Zhen-Cheng Wu, Shyuan-Jeng Ho
In the cell to complete module process, the cell to module (CTM) loss is inevitable. In typical process, the CTM power loss is larger than 3%. In this letter, we tried to reduce the CTM loss by studying the backsheet reflectance and the string inter space effect. The conclusion was carried out basing on the both simulation and experiment results. It shows if the reflectance of backsheet is from 70% to 90%, the power gain will be improved ∼0.3%. We also show the CTM loss decreases with the increasing string inter space. Around 0.3% less CTM loss can be achieved by changing the string inter space. In the end, we conclude that the CTM loss can be reduced from 3% to 2.28% by combining these two beneficial effects.
{"title":"Optimization of the output power by effect of backsheet reflectance and spacing between cell strings","authors":"W. Su, Yi-Chia Chen, Wen-Hsuan Liao, Chiu-Hua Huang, De-Chih Liu, Ming-Yuan Huang, Zhen-Cheng Wu, Shyuan-Jeng Ho","doi":"10.1109/PVSC.2011.6186624","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186624","url":null,"abstract":"In the cell to complete module process, the cell to module (CTM) loss is inevitable. In typical process, the CTM power loss is larger than 3%. In this letter, we tried to reduce the CTM loss by studying the backsheet reflectance and the string inter space effect. The conclusion was carried out basing on the both simulation and experiment results. It shows if the reflectance of backsheet is from 70% to 90%, the power gain will be improved ∼0.3%. We also show the CTM loss decreases with the increasing string inter space. Around 0.3% less CTM loss can be achieved by changing the string inter space. In the end, we conclude that the CTM loss can be reduced from 3% to 2.28% by combining these two beneficial effects.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114447183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186552
V. Moroz, Joanne Huang, K. Wijekoon, D. Tanner
Optical analysis is performed for mono-crystalline silicon wafers with and without the texture and with and without the POCl doping, the passivating anti-reflective nitride film on front surface, and the screen printed aluminum conductor on the back surface. Reflectance is measured in the wavelength range from 300 nm to 1200 nm. Modeling of the light reflectance, absorbance, and transmittance is done using ray-tracing technique for the regular and the random texture patterns. Good agreement of measured and modeled data is obtained for the sub — 1 micron wavelengths by using standard material optical properties. However, the infrared light above the 1 micron wavelength requires accounting for several mono-layers thick native oxide present on silicon surfaces and adjusting the optical properties of specific nitride and aluminum films used in the solar cell manufacturing. It is found that the random texture exhibits 15% to 20% better light capture than the regular texture. Theoretical analysis provides plausible explanation of this effect and suggests a way to further improve optical performance of the textured surfaces. The optical modeling methodology can be used to find the optimum combination of texture and passivating/contact films for different solar cell designs.
{"title":"Experimental and theoretical analysis of the optical behavior of textured silicon wafers","authors":"V. Moroz, Joanne Huang, K. Wijekoon, D. Tanner","doi":"10.1109/PVSC.2011.6186552","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186552","url":null,"abstract":"Optical analysis is performed for mono-crystalline silicon wafers with and without the texture and with and without the POCl doping, the passivating anti-reflective nitride film on front surface, and the screen printed aluminum conductor on the back surface. Reflectance is measured in the wavelength range from 300 nm to 1200 nm. Modeling of the light reflectance, absorbance, and transmittance is done using ray-tracing technique for the regular and the random texture patterns. Good agreement of measured and modeled data is obtained for the sub — 1 micron wavelengths by using standard material optical properties. However, the infrared light above the 1 micron wavelength requires accounting for several mono-layers thick native oxide present on silicon surfaces and adjusting the optical properties of specific nitride and aluminum films used in the solar cell manufacturing. It is found that the random texture exhibits 15% to 20% better light capture than the regular texture. Theoretical analysis provides plausible explanation of this effect and suggests a way to further improve optical performance of the textured surfaces. The optical modeling methodology can be used to find the optimum combination of texture and passivating/contact films for different solar cell designs.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121889102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186384
Jin‐Sung Kim, Kyungwon Moon, Kyu-Sang Shin, M. Jung, Chel-Jong Choi
We have investigated the current-voltage characteristics of n+/p junction solar cells formed on p-Si substrate with n+ emitter junction formed by diffusion phosphorus paste by means of furnace annealing. The annealing has been carried out in different ambients. The diode annealed in O2 ambient showed the best rectifying behavior while the diode annealed in Ar showed the least with degradation of rectifying behavior with increase of flow rate.
{"title":"Investigation of the current-voltage characteristics of N+/P junction silicon solar cell emitters formed by phosphorus diffusion paste on P-Si substrate","authors":"Jin‐Sung Kim, Kyungwon Moon, Kyu-Sang Shin, M. Jung, Chel-Jong Choi","doi":"10.1109/PVSC.2011.6186384","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186384","url":null,"abstract":"We have investigated the current-voltage characteristics of n+/p junction solar cells formed on p-Si substrate with n+ emitter junction formed by diffusion phosphorus paste by means of furnace annealing. The annealing has been carried out in different ambients. The diode annealed in O2 ambient showed the best rectifying behavior while the diode annealed in Ar showed the least with degradation of rectifying behavior with increase of flow rate.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122109144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186518
Christian D. R. Ludwig, T. Gruhn, C. Felser, J. Windeln
The chalcopyrite semiconductors CuIn1−xGaxSe2 (CIGS) and CuInSe2 (CIS) are excellent materials for high efficiency and low cost thin-film solar cells. This is due to the effective absorption of the solar spectrum and the inherent resilience to defects and composition fluctuations. Although the CIGS and CIS material in solar cells is highly inhomogeneous and exhibits a lot of different defects, the cell efficiencies are exceptionally high. If single crystalline absorbers are used, efficiencies are lower. Therefore, studying spatial inhomogeneities and defect structures is of great importance for understanding what supports and what diminishes the efficiency and robustness of the cells. This article describes Monte Carlo (MC) simulations based on ab initio density functional theory (DFT) that are used to investigate spatial inhomogeneities, disorder phenomena and stoichiometries in CIGS and CIS materials. For CIGS systems the temperature-dependent spatial In-Ga distribution has been studied. The simulations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS becomes more and more a homogeneous alloy. A larger degree of inhomogeneity for Ga-rich CIGS persists over a wide temperature range, which contributes to the comparably low efficiency of Ga-rich CIGS solar cells. For the CIS material, Cu-poor defect structures have been investigated. The simulations show that CuIn5Se8 undergoes a discontinuous order-disorder phase transition. Grand-canonical MC simulations provide a map in which various stoichiometries occur, depending on the chemical potentials of Cu and In. In the CIS film production process based on chemical vapor deposition, the chemical potentials can be adjusted by varying the partial vapor pressures.
{"title":"Spatial inhomogeneities and defect structures in CIGS and CIS materials: An ab-initio based Monte Carlo study","authors":"Christian D. R. Ludwig, T. Gruhn, C. Felser, J. Windeln","doi":"10.1109/PVSC.2011.6186518","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186518","url":null,"abstract":"The chalcopyrite semiconductors CuIn1−xGaxSe2 (CIGS) and CuInSe2 (CIS) are excellent materials for high efficiency and low cost thin-film solar cells. This is due to the effective absorption of the solar spectrum and the inherent resilience to defects and composition fluctuations. Although the CIGS and CIS material in solar cells is highly inhomogeneous and exhibits a lot of different defects, the cell efficiencies are exceptionally high. If single crystalline absorbers are used, efficiencies are lower. Therefore, studying spatial inhomogeneities and defect structures is of great importance for understanding what supports and what diminishes the efficiency and robustness of the cells. This article describes Monte Carlo (MC) simulations based on ab initio density functional theory (DFT) that are used to investigate spatial inhomogeneities, disorder phenomena and stoichiometries in CIGS and CIS materials. For CIGS systems the temperature-dependent spatial In-Ga distribution has been studied. The simulations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS becomes more and more a homogeneous alloy. A larger degree of inhomogeneity for Ga-rich CIGS persists over a wide temperature range, which contributes to the comparably low efficiency of Ga-rich CIGS solar cells. For the CIS material, Cu-poor defect structures have been investigated. The simulations show that CuIn5Se8 undergoes a discontinuous order-disorder phase transition. Grand-canonical MC simulations provide a map in which various stoichiometries occur, depending on the chemical potentials of Cu and In. In the CIS film production process based on chemical vapor deposition, the chemical potentials can be adjusted by varying the partial vapor pressures.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122159751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186246
Jae-Won Seo, H. Oh, D. Kyung, M. Hwang, Kyumin Lee, Won-jae Lee, E.-C. Cho
The passivation layer of Al2O3 on the p-type CZ silicon wafers were carried out using a thermal ALD (atomic layer deposition), with the objective of realizing an industrial version of the PERL (passivated emitter, rear locally diffused) cells. The experiments were performed on bare wafers and device-like structures which have a textured front surface, phosphorus doped emitter, and antireflection coating layer. Different lifetime characteristics were shown with surface state depending on Al2O3 and SiNx deposition. In the case of Al2O3/SiNx stacked layers on bare wafer, measured maximum minority carrier lifetime and implied voltage were 600 μs and 750mV, respectively. Maximum minority carrier lifetime and implied voltage for emitter sheet resistance of 100Ω/sq are 109 μs and 679mV before patterning and 88 μs and 673mV after patterning, respectively.
{"title":"Investigation of passivation properties of thermal Al2O3 and SiNx stack layers deposited on solar grade p-type CZ Si wafers","authors":"Jae-Won Seo, H. Oh, D. Kyung, M. Hwang, Kyumin Lee, Won-jae Lee, E.-C. Cho","doi":"10.1109/PVSC.2011.6186246","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186246","url":null,"abstract":"The passivation layer of Al<inf>2</inf>O<inf>3</inf> on the p-type CZ silicon wafers were carried out using a thermal ALD (atomic layer deposition), with the objective of realizing an industrial version of the PERL (passivated emitter, rear locally diffused) cells. The experiments were performed on bare wafers and device-like structures which have a textured front surface, phosphorus doped emitter, and antireflection coating layer. Different lifetime characteristics were shown with surface state depending on Al<inf>2</inf>O<inf>3</inf> and SiN<inf>x</inf> deposition. In the case of Al<inf>2</inf>O<inf>3</inf>/SiN<inf>x</inf> stacked layers on bare wafer, measured maximum minority carrier lifetime and implied voltage were 600 μs and 750mV, respectively. Maximum minority carrier lifetime and implied voltage for emitter sheet resistance of 100Ω/sq are 109 μs and 679mV before patterning and 88 μs and 673mV after patterning, respectively.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128386971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186173
W. Zhou, A. B. Belay, K. Davis, Rodica Khugler, N. Sorloaica-Hickman
Transparent and conductive coatings were achieved on glass by dissolving graphene oxide into dionized water followed by spray-coating on preheated substrate, chemical and thermal reduction. SEM shows the spray-coating graphene oxide coatings and the reduced graphene oxide coatings are uniform. No obvious aggregation was observed. UV-vis transmission spectra shows 65% transmittance at 550 nm of the graphene coatings with 15 kΩ/□.
{"title":"Graphene transparent and conductive electrode for light harvesting solar cells","authors":"W. Zhou, A. B. Belay, K. Davis, Rodica Khugler, N. Sorloaica-Hickman","doi":"10.1109/PVSC.2011.6186173","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186173","url":null,"abstract":"Transparent and conductive coatings were achieved on glass by dissolving graphene oxide into dionized water followed by spray-coating on preheated substrate, chemical and thermal reduction. SEM shows the spray-coating graphene oxide coatings and the reduced graphene oxide coatings are uniform. No obvious aggregation was observed. UV-vis transmission spectra shows 65% transmittance at 550 nm of the graphene coatings with 15 kΩ/□.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128409416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186592
J. Perez-Mariano, T. Leung, L. Moro, S. Gleixner, K. Lau, Bryan Chavez, M. Hornbostel, A. Sanjurjo
Thin film polycrystalline solar cells on low cost substrates offer an attractive path to large scale production of solar cells with the potential to generate electricity at 1$/W. SRI International has a propriety technology to deposit Si films in a reactor based on fluidized bed technology. The results presented in this paper show that, with a proper reactor design, Si films can be grown at rates of 7 μm/min and higher. Films are crystalline, with crystallite sizes higher than 20 μm. We have also evaluated the performance of SiO2 diffusion barriers as a potential way towards the use of low cost substrates, such as metallurgical grade Si. Whereas SiO2 layers of 0.1 μm are not sufficient to stop P diffusion from the substrate to the film, 0.7 μm layers are thick enough to accomplish this goal. The reactor configuration can be used for continuous and integrated cell/panel fabrication. At present we are building a first continuous reactor, and in this paper we present some preliminary considerations.
{"title":"Progress on crystalline silicon thin film solar cells by FBR-CVD: Effect of substrates and reactor design","authors":"J. Perez-Mariano, T. Leung, L. Moro, S. Gleixner, K. Lau, Bryan Chavez, M. Hornbostel, A. Sanjurjo","doi":"10.1109/PVSC.2011.6186592","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186592","url":null,"abstract":"Thin film polycrystalline solar cells on low cost substrates offer an attractive path to large scale production of solar cells with the potential to generate electricity at 1$/W. SRI International has a propriety technology to deposit Si films in a reactor based on fluidized bed technology. The results presented in this paper show that, with a proper reactor design, Si films can be grown at rates of 7 μm/min and higher. Films are crystalline, with crystallite sizes higher than 20 μm. We have also evaluated the performance of SiO2 diffusion barriers as a potential way towards the use of low cost substrates, such as metallurgical grade Si. Whereas SiO2 layers of 0.1 μm are not sufficient to stop P diffusion from the substrate to the film, 0.7 μm layers are thick enough to accomplish this goal. The reactor configuration can be used for continuous and integrated cell/panel fabrication. At present we are building a first continuous reactor, and in this paper we present some preliminary considerations.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128519639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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