Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6185838
R. Caballero, C. Kaufmann, T. Rissom, A. Eicke, P. Manganiello, H. Schock
The goal of this work is to investigate the influence of the Na incorporation method into CuIn1−xGaxSe2 (x=Ga/(In+Ga)) (CIGSe)-based solar cells on polyimide (PI) foil. In particular we want to compare the effect of a NaF precursor layer with that of NaF co- and post-deposition. Secondary ion and neutral mass spectroscopies (SIMS/SNMS) are used to study the distribution of the elements through the CIGSe layers. Cross-sectional scanning electron microscopy (SEM) shows the dependence of the absorber microstructure on the method of how Na is supplied with and without Ga present. Adding Ga the device microstructure is generally characterized by smaller CIGSe grains next to the Mo back contact, which indicates the very low process temperature used. The use of a NaF precursor, our standard method for the supply of Na, modifies the growth kinetic of the absorber layer and emphasizes the importance of growth parameters such as the Cu flux and max Cu content during the deposition process. Optimization of the deposition process that uses a NaF precursor, so far led to a max efficiency of 15.9 % (ta = 0.95 cm2). In the case of NaF post-deposition the use of a low process temperature is argued to reduce the Na diffusion throughout the absorber layer, which may reduce the quality of the CIGSe/Mo back interface. This may explain the lower FF observed generally for this process in comparison to that where Na is supplied by a precursor layer.
{"title":"Evaluating different Na-incorporation methods for low temperature grown CIGSe thin film on polyimide foils","authors":"R. Caballero, C. Kaufmann, T. Rissom, A. Eicke, P. Manganiello, H. Schock","doi":"10.1109/PVSC.2011.6185838","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185838","url":null,"abstract":"The goal of this work is to investigate the influence of the Na incorporation method into CuIn1−xGaxSe2 (x=Ga/(In+Ga)) (CIGSe)-based solar cells on polyimide (PI) foil. In particular we want to compare the effect of a NaF precursor layer with that of NaF co- and post-deposition. Secondary ion and neutral mass spectroscopies (SIMS/SNMS) are used to study the distribution of the elements through the CIGSe layers. Cross-sectional scanning electron microscopy (SEM) shows the dependence of the absorber microstructure on the method of how Na is supplied with and without Ga present. Adding Ga the device microstructure is generally characterized by smaller CIGSe grains next to the Mo back contact, which indicates the very low process temperature used. The use of a NaF precursor, our standard method for the supply of Na, modifies the growth kinetic of the absorber layer and emphasizes the importance of growth parameters such as the Cu flux and max Cu content during the deposition process. Optimization of the deposition process that uses a NaF precursor, so far led to a max efficiency of 15.9 % (ta = 0.95 cm2). In the case of NaF post-deposition the use of a low process temperature is argued to reduce the Na diffusion throughout the absorber layer, which may reduce the quality of the CIGSe/Mo back interface. This may explain the lower FF observed generally for this process in comparison to that where Na is supplied by a precursor layer.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122269998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186557
J. Renshaw, A. Rohatgi
Two dimensional simulations were performed to asses the potential for screen printed interdigitated back contact solar cells. In this work we optimized the design of the rear back surface field and emitter for screen printed contacts in conjunction with the design of the front surface field for best performance. With these optimized diffusion profiles we then explored the best cell design by varying the pitch, the gap between the n+ and p+ regions and the base resistivity. Model calculations provide guidelines for designing screen printed IBC solar cells given certain limitations on base resistivity or ability to create a small gap between the n+ and p+ diffusion. In these simulations care was taken to assign realistic parameters to cell design, wafer quality, and cell dimensions that are achievable for screen printing technology. Through these simulations we show the potential for a 22% efficient solar cell with screen printed contacts. Higher emitter fraction, smaller gap, and opaque diffused regions play an important role in attaining high efficiency screen printed interdigitated back contact solar cells.
{"title":"Device optimization for screen printed interdigitated back contact solar cells","authors":"J. Renshaw, A. Rohatgi","doi":"10.1109/PVSC.2011.6186557","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186557","url":null,"abstract":"Two dimensional simulations were performed to asses the potential for screen printed interdigitated back contact solar cells. In this work we optimized the design of the rear back surface field and emitter for screen printed contacts in conjunction with the design of the front surface field for best performance. With these optimized diffusion profiles we then explored the best cell design by varying the pitch, the gap between the n+ and p+ regions and the base resistivity. Model calculations provide guidelines for designing screen printed IBC solar cells given certain limitations on base resistivity or ability to create a small gap between the n+ and p+ diffusion. In these simulations care was taken to assign realistic parameters to cell design, wafer quality, and cell dimensions that are achievable for screen printing technology. Through these simulations we show the potential for a 22% efficient solar cell with screen printed contacts. Higher emitter fraction, smaller gap, and opaque diffused regions play an important role in attaining high efficiency screen printed interdigitated back contact solar cells.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"432 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115933936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186130
D. Dimitrov, D.-C. Wu, C. Lin
A texturization method suitable for both c- and mc-Si is developed. The method is applied on as-cut wafers and is found to be suitable for combined saw damage removal and texture formation. The texturization with inverted surface structures was obtained using wet chemistry process sequence at room temperatures without using a mask and lithography. Potential for an improvement of the standard screen — printing cells performance by incorporation of the new developed texturization method is demonstrated.
{"title":"Unified texturization method for mono- and multi-crystalline silicon solar cells","authors":"D. Dimitrov, D.-C. Wu, C. Lin","doi":"10.1109/PVSC.2011.6186130","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186130","url":null,"abstract":"A texturization method suitable for both c- and mc-Si is developed. The method is applied on as-cut wafers and is found to be suitable for combined saw damage removal and texture formation. The texturization with inverted surface structures was obtained using wet chemistry process sequence at room temperatures without using a mask and lithography. Potential for an improvement of the standard screen — printing cells performance by incorporation of the new developed texturization method is demonstrated.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115973776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186326
M. Slocum, D. Forbes, J. Mcnatt, S. Hubbard
The simulation and fabrication of a multi-period GaAs n-type / intrinsic / p-type / intrinsic (nipi) doping superlattice solar cell has been demonstrated. A fabrication procedure has been developed using regrown contacts in wet etched V-grooves. Devices have been fabricated and characterized. Current-Voltage measurements in the dark and under one sun AM0 illumination were taken both experimentally and in simulation. Devices with epitaxial regrown contacts having a shunt resistance of 3.17 kΩ, demonstrates an improvement over prior work. Simulations show the potential for high current collection, with non anti-reflection coated AM0 results achieving 24.02 mA/cm2 short circuit current, due to a drift dominated current collection mechanism.
{"title":"Epitaxial regrowth contacts for the nipi photovoltaic device","authors":"M. Slocum, D. Forbes, J. Mcnatt, S. Hubbard","doi":"10.1109/PVSC.2011.6186326","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186326","url":null,"abstract":"The simulation and fabrication of a multi-period GaAs n-type / intrinsic / p-type / intrinsic (nipi) doping superlattice solar cell has been demonstrated. A fabrication procedure has been developed using regrown contacts in wet etched V-grooves. Devices have been fabricated and characterized. Current-Voltage measurements in the dark and under one sun AM0 illumination were taken both experimentally and in simulation. Devices with epitaxial regrown contacts having a shunt resistance of 3.17 kΩ, demonstrates an improvement over prior work. Simulations show the potential for high current collection, with non anti-reflection coated AM0 results achieving 24.02 mA/cm2 short circuit current, due to a drift dominated current collection mechanism.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131966714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186330
D. Fenning, T. Buonassisi
The goals of phosphorus diffusion in a multicrystalline silicon solar cell process are often contradictory. While high concentrations of phosphorus near the front surface are known to decrease blue response, a heavier diffusion generally leads to improved gettering of lifetime-killing iron impurities. To investigate the tradeoffs involved in selection of time-temperature profiles for lightly-diffused emitters, like those in a selective emitter formation, we use a coupled diffusion-segregation kinetics simulator to model the behavior of iron and phosphorus during phosphorus diffusion gettering. We propose novel approaches for mitigating the impact of high iron concentrations using shallow emitters. Firstly, our simulations indicate that lifetimes can be higher if higher-temperature processes are employed, since the rates of iron precipitate dissolution and iron point-defect diffusion are faster. (An additional benefit of higher-temperature processing, is a shorter annealing cycle time, i.e., higher throughput.) We assess the possible trade-offs of higher-temperature processing, including decreased emitter sheet resistance. However, we also show that for a fixed total process time and peak temperature, the sheet resistance of the emitter is a poor indicator of final lifetime. Instead, the final lifetime is a function of the fraction of time spent at high temperature (versus fraction spent cooling) and the shape of the cooling profile. Lastly, we show that different iron contamination levels demand different processes to maximize the processed lifetime.
{"title":"Effective iron gettering in lightly-doped emitters","authors":"D. Fenning, T. Buonassisi","doi":"10.1109/PVSC.2011.6186330","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186330","url":null,"abstract":"The goals of phosphorus diffusion in a multicrystalline silicon solar cell process are often contradictory. While high concentrations of phosphorus near the front surface are known to decrease blue response, a heavier diffusion generally leads to improved gettering of lifetime-killing iron impurities. To investigate the tradeoffs involved in selection of time-temperature profiles for lightly-diffused emitters, like those in a selective emitter formation, we use a coupled diffusion-segregation kinetics simulator to model the behavior of iron and phosphorus during phosphorus diffusion gettering. We propose novel approaches for mitigating the impact of high iron concentrations using shallow emitters. Firstly, our simulations indicate that lifetimes can be higher if higher-temperature processes are employed, since the rates of iron precipitate dissolution and iron point-defect diffusion are faster. (An additional benefit of higher-temperature processing, is a shorter annealing cycle time, i.e., higher throughput.) We assess the possible trade-offs of higher-temperature processing, including decreased emitter sheet resistance. However, we also show that for a fixed total process time and peak temperature, the sheet resistance of the emitter is a poor indicator of final lifetime. Instead, the final lifetime is a function of the fraction of time spent at high temperature (versus fraction spent cooling) and the shape of the cooling profile. Lastly, we show that different iron contamination levels demand different processes to maximize the processed lifetime.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132110761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6185904
Weiquan Yang, Rui Li, Z. Ma, Weidong Zhou
Large area crystalline InP nanomembranes (NM) with p-i-n vertical junction were transferred to flexible plastic substrates, based on low temperature frame assisted membrane transfer process. Low temperature annealing-free stacked electrodes were investigated for the compatibility of energy efficient NM stacking and manufacturing processes. Here we report the properties of stacked contacts between n-InP NMs and different kinds of electrode materials, such as aluminum and indium tin oxide (ITO). The stacked InP NM-ITO contact appears to be excellent ohmic contact, with measured contact resistance of 0.45 ω•cm2. Flexible InP solar cells with stacked back ITO and Al contacts were also fabricated, based on 240 and 1000 nm thick InP NMs. The efficiency of the solar cell with back InP-ITO contact is much higher than the efficient of the cells with back InP-Al contact. Such low temperature energy efficient NM transfer and electrode stacking techniques are highly desirable for a wide range of thin film solar cell manufacturing processes.
{"title":"Low temperature stacked electrodes for flexible crystalline semiconductor thin film solar cells","authors":"Weiquan Yang, Rui Li, Z. Ma, Weidong Zhou","doi":"10.1109/PVSC.2011.6185904","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185904","url":null,"abstract":"Large area crystalline InP nanomembranes (NM) with p-i-n vertical junction were transferred to flexible plastic substrates, based on low temperature frame assisted membrane transfer process. Low temperature annealing-free stacked electrodes were investigated for the compatibility of energy efficient NM stacking and manufacturing processes. Here we report the properties of stacked contacts between n-InP NMs and different kinds of electrode materials, such as aluminum and indium tin oxide (ITO). The stacked InP NM-ITO contact appears to be excellent ohmic contact, with measured contact resistance of 0.45 ω•cm2. Flexible InP solar cells with stacked back ITO and Al contacts were also fabricated, based on 240 and 1000 nm thick InP NMs. The efficiency of the solar cell with back InP-ITO contact is much higher than the efficient of the cells with back InP-Al contact. Such low temperature energy efficient NM transfer and electrode stacking techniques are highly desirable for a wide range of thin film solar cell manufacturing processes.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132116436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186211
T. Potlog, N. Spalatu, V. Fedorov, N. Maticiuc, C. Antoniuc, V. Botnariuc, J. Hiie, T. Raadik, V. Valdna
This paper focuses on the photovoltaic parameters of ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe thin film heterojunction solar cells. ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe thin film heterojunction solar cells were fabricated by Close Space Sublimation (CSS) on TCO-coated glass substrates. All types of solar cells were fabricated in a superstrate configuration. The thickness of ZnSe and ZnTe layers was varied in order to adjust the solar cell performance. A similar cadmium chloride solution for the treatment of a CdTe layer with an elevated temperature air annealing of the completed devices before the back contact deposition was applied to ZnSe/CdTe and CdS/CdTe thin film heterojunctions solar cells with exception of ZnTe/CdTe. All cells were characterized through light and dark current density-voltage (J-V) measurements and quantum efficiency (QE) measurements. The saturation current, ideality factor and photovoltaic parameters for all thin film heterojunction solar cells are presented. The investigation at the room temperature under illumination of 100 mW/cm2 through the wide gap components of ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe heterojunctions showed a value of conversion efficiency (η) of solar energy to electric energy about 4.7%, 9.9%, and 1.3%, respectively. The incorporation of Zn at the ZnSe and CdTe interface doubles the short circuit current density and improves the performance of ZnSe/CdTe thin film heterojunction solar cells.
{"title":"The performance of thin film solar cells employing photovoltaic ZnSe/CdTe, CdS/CdTe and ZnTe/CdTe heterojunctions","authors":"T. Potlog, N. Spalatu, V. Fedorov, N. Maticiuc, C. Antoniuc, V. Botnariuc, J. Hiie, T. Raadik, V. Valdna","doi":"10.1109/PVSC.2011.6186211","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186211","url":null,"abstract":"This paper focuses on the photovoltaic parameters of ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe thin film heterojunction solar cells. ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe thin film heterojunction solar cells were fabricated by Close Space Sublimation (CSS) on TCO-coated glass substrates. All types of solar cells were fabricated in a superstrate configuration. The thickness of ZnSe and ZnTe layers was varied in order to adjust the solar cell performance. A similar cadmium chloride solution for the treatment of a CdTe layer with an elevated temperature air annealing of the completed devices before the back contact deposition was applied to ZnSe/CdTe and CdS/CdTe thin film heterojunctions solar cells with exception of ZnTe/CdTe. All cells were characterized through light and dark current density-voltage (J-V) measurements and quantum efficiency (QE) measurements. The saturation current, ideality factor and photovoltaic parameters for all thin film heterojunction solar cells are presented. The investigation at the room temperature under illumination of 100 mW/cm2 through the wide gap components of ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe heterojunctions showed a value of conversion efficiency (η) of solar energy to electric energy about 4.7%, 9.9%, and 1.3%, respectively. The incorporation of Zn at the ZnSe and CdTe interface doubles the short circuit current density and improves the performance of ZnSe/CdTe thin film heterojunction solar cells.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129999455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186548
Myeong-Il Jeong, V. Janardhanam, Kyungwon Moon, Jin‐Sung Kim, Kyu-Sang Shin, Chel-Jong Choi
We have investigated the reverse leakage current mechanism of screen-printed Ag contacts on P-diffused crystalline Si solar cells of different efficiencies. The current-voltage measurements have been carried out in the temperature range of 175–450 K in steps of 25 K. The leakage current is independent of temperature for T< 300 K indicating the tunneling mechanism to be dominant at these temperatures in the cells of both efficiencies. The cell with higher efficiency exhibited higher leakage current compared to the lower efficiency cell as also evidenced by the lower activation energy obtained from the Arrhenius plot of reverse current. The higher leakage current in higher efficiency cell could be due to increased Schottky junction formation area compared to the lower efficiency cell.
{"title":"Reverse leakage current mechanism in crystalline silicon solar cells with N+/P junctions","authors":"Myeong-Il Jeong, V. Janardhanam, Kyungwon Moon, Jin‐Sung Kim, Kyu-Sang Shin, Chel-Jong Choi","doi":"10.1109/PVSC.2011.6186548","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186548","url":null,"abstract":"We have investigated the reverse leakage current mechanism of screen-printed Ag contacts on P-diffused crystalline Si solar cells of different efficiencies. The current-voltage measurements have been carried out in the temperature range of 175–450 K in steps of 25 K. The leakage current is independent of temperature for T< 300 K indicating the tunneling mechanism to be dominant at these temperatures in the cells of both efficiencies. The cell with higher efficiency exhibited higher leakage current compared to the lower efficiency cell as also evidenced by the lower activation energy obtained from the Arrhenius plot of reverse current. The higher leakage current in higher efficiency cell could be due to increased Schottky junction formation area compared to the lower efficiency cell.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130238805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6185985
Y. Oda, Ryosuke Hamazaki, Shohei Fukamizu, Akito Yamamoto, T. Minemoto, H. Takakura
Cu(In, Al)S2 (CIAS) absorbers had heavy roughness and a lot of particles like islands, in addition, the grain-size was small in the co-evaporation at high substrate temperature of 500°C∼, resulted in the low efficiency. To enhance the flatness and the crystal growth (large grain-size), we investigated CIAS absorbers prepared from post-annealed Cu-In-Al-S precursors and sulfurized Cu-In-Al alloys. A rapid thermal processing was used in the post-annealing and the sulfurization. The flatness of the post-annealed Cu-In-Al-S precursors enhanced but the efficiency of solar cells used the precursors was low due to the incomplete crystal growth. In contract, the sulfurized Cu-In-Al alloys became the separated layers which were the large grain-size layer and the small grain-size layer. It was revealed that the large grain-size layer and small one were CuInS2 and CIAS from both an XRD and an EDS analysis of the detached film. Furthermore, 9.6% efficiency was obtained in the solar cell used the sulfurized Cu-In-Al alloy.
{"title":"Cu(In, Al)S2 thin films prepared from rapid thermal annealing of Cu-In-Al-S precursors and Cu-In-Al alloys","authors":"Y. Oda, Ryosuke Hamazaki, Shohei Fukamizu, Akito Yamamoto, T. Minemoto, H. Takakura","doi":"10.1109/PVSC.2011.6185985","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185985","url":null,"abstract":"Cu(In, Al)S2 (CIAS) absorbers had heavy roughness and a lot of particles like islands, in addition, the grain-size was small in the co-evaporation at high substrate temperature of 500°C∼, resulted in the low efficiency. To enhance the flatness and the crystal growth (large grain-size), we investigated CIAS absorbers prepared from post-annealed Cu-In-Al-S precursors and sulfurized Cu-In-Al alloys. A rapid thermal processing was used in the post-annealing and the sulfurization. The flatness of the post-annealed Cu-In-Al-S precursors enhanced but the efficiency of solar cells used the precursors was low due to the incomplete crystal growth. In contract, the sulfurized Cu-In-Al alloys became the separated layers which were the large grain-size layer and the small grain-size layer. It was revealed that the large grain-size layer and small one were CuInS2 and CIAS from both an XRD and an EDS analysis of the detached film. Furthermore, 9.6% efficiency was obtained in the solar cell used the sulfurized Cu-In-Al alloy.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130452632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6185998
A. Haas, J. Wilcox, J. Gray, R. J. Schwartz
Solar concentrator systems often employ complex optical and electrical components such as lenses, dichroic mirrors, and inverters. Embedding solar cell models into a system analysis tool, such as an optical modeling tool, facilitates system optimization. Polynomial curve-fit based models are useful for this purpose, as they accurately and reliably predict measured cell performance over a wide range of intensity. In this paper, it is shown that the curve-fit model allows for the extraction of an intensity-dependent ideality factor and effective series resistance. A case study is performed on a published GaAs concentrator solar cell. The series resistance extracted from the model is within 10% of the expected value.
{"title":"Extracting a series resistance from In[Jsc]-Voc and FF-Voc characteristics","authors":"A. Haas, J. Wilcox, J. Gray, R. J. Schwartz","doi":"10.1109/PVSC.2011.6185998","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185998","url":null,"abstract":"Solar concentrator systems often employ complex optical and electrical components such as lenses, dichroic mirrors, and inverters. Embedding solar cell models into a system analysis tool, such as an optical modeling tool, facilitates system optimization. Polynomial curve-fit based models are useful for this purpose, as they accurately and reliably predict measured cell performance over a wide range of intensity. In this paper, it is shown that the curve-fit model allows for the extraction of an intensity-dependent ideality factor and effective series resistance. A case study is performed on a published GaAs concentrator solar cell. The series resistance extracted from the model is within 10% of the expected value.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134147572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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