Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186505
M. Bar, J. Perrenoud, R. Wilks, S. Buecheler, L. Kranz, C. Fella, J. Skarp, M. Blum, W. Yang, L. Weinhardt, C. Heske, A. Tiwari
We have used soft x-ray emission spectroscopy to study the impact of the CdCl2 activation treatment on the chemical structure of the CdTe/ZnO1−xSx interface. We find a pronounced chemical interaction, most prominently the interfacial intermixing of Cd and Zn. Furthermore, the formation of S-Cd bonds at the expense of S-Zn bonds can be observed.
{"title":"CdCl2 activation-induced chemical interaction at the CdTe/ZnO1−xSx thin-film solar cell interface","authors":"M. Bar, J. Perrenoud, R. Wilks, S. Buecheler, L. Kranz, C. Fella, J. Skarp, M. Blum, W. Yang, L. Weinhardt, C. Heske, A. Tiwari","doi":"10.1109/PVSC.2011.6186505","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186505","url":null,"abstract":"We have used soft x-ray emission spectroscopy to study the impact of the CdCl<inf>2</inf> activation treatment on the chemical structure of the CdTe/ZnO<inf>1−x</inf>S<inf>x</inf> interface. We find a pronounced chemical interaction, most prominently the interfacial intermixing of Cd and Zn. Furthermore, the formation of S-Cd bonds at the expense of S-Zn bonds can be observed.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125306770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186381
F. Dughiero, M. Forzan, D. Ciscato, Francesco Giusto
Multi-crystalline silicon ingots produced using directional solidification systems (DSS) represent the best way to obtain high quality crystalline silicon at low prices and with high throughputs. The DSS technology is widespread among PV silicon ingot producers and hundreds of furnaces are manufactured worldwide every year. The present challenge for crystal growers is to increase the maximum ingot mass in order to benefit from scale economy profits and to reduce energy consumption. This reason has pushed some companies to develop new DSS furnaces able to grow ingots up to 650 kg. As a matter of fact, the increase in size defines new challenges in design and process optimization due of the intensification of radial thermal instabilities and consequently of buoyancy driven flows in the melt [1]. These phenomena are related to heat and mass transfer during the solidification process and are important to control both the liquid/solid interface shape and the impurities distribution in the crystal [2,3,4,5,6]. The main features and the characteristic design of the hot-zone in the iDSS (induction-DSS) furnace are taken into account, especially in comparison with the standard DSSs ones. The reduction in thickness of the insulation boards and the smaller size of the hot-zone itself, together with the selective lateral induction coil system, all lead to an optimal control of the thermal instabilities into the silicon melt, increasing the ingot quality. In fact, the lateral induction coil system equipped with independent turns connections can be used to force selectively — at different vertical positions — the most suitable thermal condition. In this way one is able to compensate the radiative thermal losses and create a “virtual” adiabatic wall, producing a perfectly planar solidification front or modeling the radial thermal gradient in order to obtain the desired solidification front shapes. The results from a set of electro-magnetic, thermal and fluid-dynamic simulation are presented; the first data collected from the real scale prototype are shown.
{"title":"Multi-crystalline silicon ingots growth with an innovative induction heating directional solidification furnace","authors":"F. Dughiero, M. Forzan, D. Ciscato, Francesco Giusto","doi":"10.1109/PVSC.2011.6186381","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186381","url":null,"abstract":"Multi-crystalline silicon ingots produced using directional solidification systems (DSS) represent the best way to obtain high quality crystalline silicon at low prices and with high throughputs. The DSS technology is widespread among PV silicon ingot producers and hundreds of furnaces are manufactured worldwide every year. The present challenge for crystal growers is to increase the maximum ingot mass in order to benefit from scale economy profits and to reduce energy consumption. This reason has pushed some companies to develop new DSS furnaces able to grow ingots up to 650 kg. As a matter of fact, the increase in size defines new challenges in design and process optimization due of the intensification of radial thermal instabilities and consequently of buoyancy driven flows in the melt [1]. These phenomena are related to heat and mass transfer during the solidification process and are important to control both the liquid/solid interface shape and the impurities distribution in the crystal [2,3,4,5,6]. The main features and the characteristic design of the hot-zone in the iDSS (induction-DSS) furnace are taken into account, especially in comparison with the standard DSSs ones. The reduction in thickness of the insulation boards and the smaller size of the hot-zone itself, together with the selective lateral induction coil system, all lead to an optimal control of the thermal instabilities into the silicon melt, increasing the ingot quality. In fact, the lateral induction coil system equipped with independent turns connections can be used to force selectively — at different vertical positions — the most suitable thermal condition. In this way one is able to compensate the radiative thermal losses and create a “virtual” adiabatic wall, producing a perfectly planar solidification front or modeling the radial thermal gradient in order to obtain the desired solidification front shapes. The results from a set of electro-magnetic, thermal and fluid-dynamic simulation are presented; the first data collected from the real scale prototype are shown.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125391382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186225
K. Ghosh, Ghosh, Nam-Kyu Song, M. Oh, Dong-Seop Kim, S. Bowden
A technique to measure the recombination parameter of a-Si/c-Si heterojunction solar cell is described in the work. In this methodology, the experimentally measured inverse lifetime by Sinton lifetime tester is fitted with A+BΔn+CΔn2 to determine the recombination parameters. The coefficients B and C are radiative and auger recombination coefficient while coefficient A depends on bulk lifetime and surface recombination velocity. The radiative and auger recombination coefficients determined from the work agrees well with previously published results while the surface recombination velocity extracted from coefficient A is typical of well passivated c-Si surface in a-Si/c-Si heterojunction solar cell.
本文介绍了一种测量A - si /c-Si异质结太阳能电池复合参数的方法。该方法采用A+BΔn+CΔn2拟合Sinton寿命测试仪实验测量的逆寿命，确定复合参数。系数B和C是辐射复合系数和螺旋复合系数，而系数A取决于体寿命和表面复合速度。从该工作中确定的辐射和螺旋复合系数与先前发表的结果一致，而从系数A中提取的表面复合速度是A - si /c-Si异质结太阳能电池中钝化良好的c-Si表面的典型特征。
{"title":"Extraction of recombination parameters of amorphous silicon/crystalline silicon solar cell from lifetime spectroscopy","authors":"K. Ghosh, Ghosh, Nam-Kyu Song, M. Oh, Dong-Seop Kim, S. Bowden","doi":"10.1109/PVSC.2011.6186225","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186225","url":null,"abstract":"A technique to measure the recombination parameter of a-Si/c-Si heterojunction solar cell is described in the work. In this methodology, the experimentally measured inverse lifetime by Sinton lifetime tester is fitted with A+BΔn+CΔn2 to determine the recombination parameters. The coefficients B and C are radiative and auger recombination coefficient while coefficient A depends on bulk lifetime and surface recombination velocity. The radiative and auger recombination coefficients determined from the work agrees well with previously published results while the surface recombination velocity extracted from coefficient A is typical of well passivated c-Si surface in a-Si/c-Si heterojunction solar cell.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115081420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186253
G. Landis, S. Oleson, M. Mcguire, J. Fincannon, Kristen M. Bury
Use of solar electric propulsion can result in mass and propellant savings for future NASA missions to explore the solar system, enabling lightweight probes to targets in the solar system that have previously been out of reach. However, such electric-propulsion missions require large amounts of power, and require extremely lightweight solar arrays. The NASA Glenn COMPASS team was used to perform conceptual designs for several advanced missions, in order to develop a top-level understanding of the difficulties and the technologies needed, and the interaction of the power system with the propulsion system requirements for missions both close to, and far from, the Sun. Some near term and farther term missions analyzed include an exploration mission to a binary asteroid, a mission to land on and return a sample from the large main-belt asteroid Ceres, a mission to land a surface probe on Mercury, and a mission to the outer planet Uranus.
{"title":"Solar electric propulsion for advanced planetary missions","authors":"G. Landis, S. Oleson, M. Mcguire, J. Fincannon, Kristen M. Bury","doi":"10.1109/PVSC.2011.6186253","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186253","url":null,"abstract":"Use of solar electric propulsion can result in mass and propellant savings for future NASA missions to explore the solar system, enabling lightweight probes to targets in the solar system that have previously been out of reach. However, such electric-propulsion missions require large amounts of power, and require extremely lightweight solar arrays. The NASA Glenn COMPASS team was used to perform conceptual designs for several advanced missions, in order to develop a top-level understanding of the difficulties and the technologies needed, and the interaction of the power system with the propulsion system requirements for missions both close to, and far from, the Sun. Some near term and farther term missions analyzed include an exploration mission to a binary asteroid, a mission to land on and return a sample from the large main-belt asteroid Ceres, a mission to land a surface probe on Mercury, and a mission to the outer planet Uranus.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115222315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6185848
S. Johnston, Fei Yan, Jian V. Li, K. Zaunbrecher, M. Romero, M. Al‐Jassim, O. Sidelkheir, A. Blosse
Photoluminescence (PL) imaging is used to detect areas in multi-crystalline silicon that appear dark in band-to-band imaging due to high recombination. Steady-state PL intensity can be correlated to effective minority-carrier lifetime, and its temperature dependence can provide additional lifetime-limiting defect information. An area of high defect density has been laser cut from a multi-crystalline silicon solar cell. Both band-to-band and defect-band PL imaging have been collected as a function of temperature from ∼85 to 350 K. Band-to-band luminescence is collected by an InGaAs camera using a 1200-nm short-pass filter, while defect band luminescence is collected using a 1350-nm long pass filter. The defect band luminescence is characterized by cathodoluminescence. Small pieces from adjacent areas within the same wafer are measured by deep-level transient spectroscopy (DLTS). DLTS detects a minority-carrier electron trap level with an activation energy of 0.45 eV on the sample that contained defects as seen by imaging.
{"title":"Temperature-dependent Photoluminescence imaging and characterization of a multi-crystalline silicon solar cell defect area","authors":"S. Johnston, Fei Yan, Jian V. Li, K. Zaunbrecher, M. Romero, M. Al‐Jassim, O. Sidelkheir, A. Blosse","doi":"10.1109/PVSC.2011.6185848","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185848","url":null,"abstract":"Photoluminescence (PL) imaging is used to detect areas in multi-crystalline silicon that appear dark in band-to-band imaging due to high recombination. Steady-state PL intensity can be correlated to effective minority-carrier lifetime, and its temperature dependence can provide additional lifetime-limiting defect information. An area of high defect density has been laser cut from a multi-crystalline silicon solar cell. Both band-to-band and defect-band PL imaging have been collected as a function of temperature from ∼85 to 350 K. Band-to-band luminescence is collected by an InGaAs camera using a 1200-nm short-pass filter, while defect band luminescence is collected using a 1350-nm long pass filter. The defect band luminescence is characterized by cathodoluminescence. Small pieces from adjacent areas within the same wafer are measured by deep-level transient spectroscopy (DLTS). DLTS detects a minority-carrier electron trap level with an activation energy of 0.45 eV on the sample that contained defects as seen by imaging.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115506070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186127
P. Brand, Y. Veschetti, V. Sanzone, R. Cabal, X. Pagès, K. Vanormelingen, P. Vermont
This work aims at evaluating aluminium oxide (Al2O3) as an emitter passivation layer for Cz-silicon n-type solar cells fabricated with screen-printed metallization. The effect of firing on the emitter saturation current density obtained with Al2O3/SiNx was studied and compared to the one obtained with thermal SiO2/SiNx. An efficiency of 18.3% was achieved using Al2O3 for n-type solar cells, still limited by a low fill factor due to a high contact resistance.
{"title":"Integration of aluminium oxide as a passivation layer in a high efficiency industrial process on n-type silicon solar cells","authors":"P. Brand, Y. Veschetti, V. Sanzone, R. Cabal, X. Pagès, K. Vanormelingen, P. Vermont","doi":"10.1109/PVSC.2011.6186127","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186127","url":null,"abstract":"This work aims at evaluating aluminium oxide (Al<inf>2</inf>O<inf>3</inf>) as an emitter passivation layer for Cz-silicon n-type solar cells fabricated with screen-printed metallization. The effect of firing on the emitter saturation current density obtained with Al<inf>2</inf>O<inf>3</inf>/SiN<inf>x</inf> was studied and compared to the one obtained with thermal SiO<inf>2</inf>/SiN<inf>x</inf>. An efficiency of 18.3% was achieved using Al<inf>2</inf>O<inf>3</inf> for n-type solar cells, still limited by a low fill factor due to a high contact resistance.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116010594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6185999
Guo Hong, P. Yu
Tunnel diodes, also known as Esaki diodes, play an important role in III-V multi junction solar cells. In this work, we theoretically investigated the electrical characteristics of a GaAs tunnel diode and its performance against the illumination conditions such as light intensity, spatial profile, etc. We then developed a methodology to optimize a triple junction InGap/GaAs/Ge solar cell with a GaAs tunnel junction. The conversion efficiency drops with the increase of the concentration ratio is also discussed.
{"title":"Concentration effects of tunnel diode for optimizations of multi-junction solar cells","authors":"Guo Hong, P. Yu","doi":"10.1109/PVSC.2011.6185999","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185999","url":null,"abstract":"Tunnel diodes, also known as Esaki diodes, play an important role in III-V multi junction solar cells. In this work, we theoretically investigated the electrical characteristics of a GaAs tunnel diode and its performance against the illumination conditions such as light intensity, spatial profile, etc. We then developed a methodology to optimize a triple junction InGap/GaAs/Ge solar cell with a GaAs tunnel junction. The conversion efficiency drops with the increase of the concentration ratio is also discussed.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116229935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186604
Abhijeet Dubhashi, John Wood
The power output of two solar arrays with same configuration and same type of solar modules is not equal due to module mismatch and array wiring. In addition, differences in ambience can create difficulty in side-by-side comparison tests. This paper illustrates and describes two experiments performed in the Xandex Solar Lab and demonstrates how normalization was performed using two arrays with the same system size.
{"title":"Normalization of data from two matching photovoltaic arrays","authors":"Abhijeet Dubhashi, John Wood","doi":"10.1109/PVSC.2011.6186604","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186604","url":null,"abstract":"The power output of two solar arrays with same configuration and same type of solar modules is not equal due to module mismatch and array wiring. In addition, differences in ambience can create difficulty in side-by-side comparison tests. This paper illustrates and describes two experiments performed in the Xandex Solar Lab and demonstrates how normalization was performed using two arrays with the same system size.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122309654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186222
M. Deceglie, H. Atwater
We present two-dimensional device physics simulations of amorphous silicon / crystalline silicon heterojunction solar cells to explain the effects of full and localized epitaxial layers, sometimes observed in the early stages of amorphous Si deposition, on cell performance. Minimizing the defect density, thickness, and wafer area fraction covered by the epitaxial region are shown to be important factors for maximizing cell open circuit voltage. We find that localized defect-rich epitaxial patches covering small percentages of the wafer surface (∼5%) can cause significant reduction in open circuit voltage, which is explained by considering lateral carrier flow in the device. We also show that a thin layer of low-mobility material, such as microcrystalline silicon, included between the wafer and amorphous regions can impede lateral carrier flow and improve conversion efficiencies in cases where isolated defective pinholes limit device performance.
{"title":"Effect of defect-rich epitaxy on crystalline silicon / amorphous silicon heterojunction solar cells and the use of low-mobility layers to improve peformance","authors":"M. Deceglie, H. Atwater","doi":"10.1109/PVSC.2011.6186222","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186222","url":null,"abstract":"We present two-dimensional device physics simulations of amorphous silicon / crystalline silicon heterojunction solar cells to explain the effects of full and localized epitaxial layers, sometimes observed in the early stages of amorphous Si deposition, on cell performance. Minimizing the defect density, thickness, and wafer area fraction covered by the epitaxial region are shown to be important factors for maximizing cell open circuit voltage. We find that localized defect-rich epitaxial patches covering small percentages of the wafer surface (∼5%) can cause significant reduction in open circuit voltage, which is explained by considering lateral carrier flow in the device. We also show that a thin layer of low-mobility material, such as microcrystalline silicon, included between the wafer and amorphous regions can impede lateral carrier flow and improve conversion efficiencies in cases where isolated defective pinholes limit device performance.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122331319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-19DOI: 10.1109/PVSC.2011.6186641
D. Verma, O. Midtgård, Tor O. Satre
In the EU continent, a generation cost around 0.15€/kWh has been achieved [1]. Around the world, there is a mission to stimulate this green source of energy and it is believed that by 2030, PV will be able to deliver around 9 % of the world's electricity demands. According to an International Energy Agency (IEA) report [2], it is expected that PV will accomplish grid parity in at least 10% of the world by 2020. There was a significant 60 % annual growth in the grid connected PV systems in the span of 2004–2009 [3]. The present article will bring out the status & review of PV technology and the details of PV system standards as suggested by IEA. In the present paper, the main attention has been paid to the grid connected systems.
{"title":"Review of photovoltaic status in a European (EU) perspective","authors":"D. Verma, O. Midtgård, Tor O. Satre","doi":"10.1109/PVSC.2011.6186641","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186641","url":null,"abstract":"In the EU continent, a generation cost around 0.15€/kWh has been achieved [1]. Around the world, there is a mission to stimulate this green source of energy and it is believed that by 2030, PV will be able to deliver around 9 % of the world's electricity demands. According to an International Energy Agency (IEA) report [2], it is expected that PV will accomplish grid parity in at least 10% of the world by 2020. There was a significant 60 % annual growth in the grid connected PV systems in the span of 2004–2009 [3]. The present article will bring out the status & review of PV technology and the details of PV system standards as suggested by IEA. In the present paper, the main attention has been paid to the grid connected systems.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122501945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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