Pub Date : 2021-06-24DOI: 10.23919/MIXDES52406.2021.9497644
Nagaditya Poluri, Maria Merlyne De Souza, N. Venkatesan, P. Fay
Continuum mode amplifiers, which rely on harmonic tuning, have shown their potential for high efficiency over large bandwidths below 6 GHz and are strong candidates for even higher frequency applications of 5G networks. An accurate model of the transistor up to the third harmonic is a necessity for exploiting these amplifier classes. In this work, we present the considerations and challenges associated with modelling the device, and in particular the impact of extrinsic parasitics, for operation at high frequencies. We present a modified version of Dambrine’s extraction procedure of intrinsic elements at sub-6 GHz frequencies, and demonstrate its utility up to 80 GHz by application in the extraction of a simulated GaN HEMT.
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