Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700420
C. Fonstad, K. V. Shenoy
A novel epitaxy-on-electronics process for fabricating optoelectronic integrated circuits (OEICs) with high performance optoelectronic devices monolithically integrated with VLSI density and complexity GaAs electronic circuitry has been proposed, demonstrated, and continues to be developed by a research team1 at MIT associated with the ARPA-funded National Center for Integrated Photonics Technology (NCIPT)' and working in collaboration with other researchers at Caltech3, GTE Labs Inc.4, MIT Lincoln Laboratory5, Motorola, Inc.6, and Vitesse Semiconductor Corp.7. Building on the existing commercial gallium arsenide integrated circuit technology base, this epi-on-electronics approach does not require t'he development of a VLSI electronics technology, unlike the more common epitaxy-first approach. It thus promises to provide a direct, immediate route to the realization of large-scale application-specific OEICs for a variety of applications. Recent work by researchers at MIT has shown that gallium arsenide MESFETs fabricated using commercial VLSI processes incorporating refractory metal ohmic contacts and gates, and standard (Si IC-like) back-end multi-level dielectric and interconnect technology, are not adversely effected by several hours at elevated temperatures*. This means that these devices will survive the molecular beam epitaxy growth sequence for many 111-V optoelectronic device heterostructures. In fact, these MESFETs still function after being annealed at as high as 700"C, but as Figure 1 illustrates, the room temperature characteristics change for anneals above 500°C. Thus if established design rules and simulation tools are to be used, the bulk of the epitaxial growth run must be conducted at 500°C or less.
{"title":"Application Specific OEICs Fabricated Using GaAs IC Foundry Services","authors":"C. Fonstad, K. V. Shenoy","doi":"10.1109/LEOSST.1994.700420","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700420","url":null,"abstract":"A novel epitaxy-on-electronics process for fabricating optoelectronic integrated circuits (OEICs) with high performance optoelectronic devices monolithically integrated with VLSI density and complexity GaAs electronic circuitry has been proposed, demonstrated, and continues to be developed by a research team1 at MIT associated with the ARPA-funded National Center for Integrated Photonics Technology (NCIPT)' and working in collaboration with other researchers at Caltech3, GTE Labs Inc.4, MIT Lincoln Laboratory5, Motorola, Inc.6, and Vitesse Semiconductor Corp.7. Building on the existing commercial gallium arsenide integrated circuit technology base, this epi-on-electronics approach does not require t'he development of a VLSI electronics technology, unlike the more common epitaxy-first approach. It thus promises to provide a direct, immediate route to the realization of large-scale application-specific OEICs for a variety of applications. Recent work by researchers at MIT has shown that gallium arsenide MESFETs fabricated using commercial VLSI processes incorporating refractory metal ohmic contacts and gates, and standard (Si IC-like) back-end multi-level dielectric and interconnect technology, are not adversely effected by several hours at elevated temperatures*. This means that these devices will survive the molecular beam epitaxy growth sequence for many 111-V optoelectronic device heterostructures. In fact, these MESFETs still function after being annealed at as high as 700\"C, but as Figure 1 illustrates, the room temperature characteristics change for anneals above 500°C. Thus if established design rules and simulation tools are to be used, the bulk of the epitaxial growth run must be conducted at 500°C or less.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"205 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126975193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700449
D. Goodwill, F. Tooley, A. Walker, M. Taghizadeh, M. Mcelhinney, F. Pottier, C. Stanley, D. Vass, I. Underwood, M. Snook, M. Dunn, J. Hong, B. Sinclair
{"title":"InGaAs S-SEEDs And Silicon CMOS Smart Pixels For 1047-1064nm Operation","authors":"D. Goodwill, F. Tooley, A. Walker, M. Taghizadeh, M. Mcelhinney, F. Pottier, C. Stanley, D. Vass, I. Underwood, M. Snook, M. Dunn, J. Hong, B. Sinclair","doi":"10.1109/LEOSST.1994.700449","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700449","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127033225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700427
L. Chirovsky, L. D’asaro, S. Hui, B. Tseng, G. Livescu, A. Lentine, R. A. Novotny, T. K. Woodward, G. Boyd
The main reason for integrating optical receivers and transmitters into electronic data processing chips is to provide those chips with a high density of fast input/output (UO) ports for a high data throughput capability. To do such a task effectively, the optoelectronic circuits must be: 1) small, so they do not occupy an inordinate fraction of chip area; 2) low power dissipating, so they do not cumulatively add more thermal load than the VO ports they are replacing; 3) easily co-fabricated with the electronics for manufacturability; and 4) functionally compatible with the electronic circuits for direct interaction (any interface circuits therefore must be considered functionally part of the optoelectronic circuits).
{"title":"Optical Receivers And Transmitters Integrated Into Electronic Digital Logic Circuits","authors":"L. Chirovsky, L. D’asaro, S. Hui, B. Tseng, G. Livescu, A. Lentine, R. A. Novotny, T. K. Woodward, G. Boyd","doi":"10.1109/LEOSST.1994.700427","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700427","url":null,"abstract":"The main reason for integrating optical receivers and transmitters into electronic data processing chips is to provide those chips with a high density of fast input/output (UO) ports for a high data throughput capability. To do such a task effectively, the optoelectronic circuits must be: 1) small, so they do not occupy an inordinate fraction of chip area; 2) low power dissipating, so they do not cumulatively add more thermal load than the VO ports they are replacing; 3) easily co-fabricated with the electronics for manufacturability; and 4) functionally compatible with the electronic circuits for direct interaction (any interface circuits therefore must be considered functionally part of the optoelectronic circuits).","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116894274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700416
A. Larsson, M. Hagberg, T. Kjellberg, N. Eriksson
Surface gratings are useful components for integrated optic and optoelectronic circuits due to the large variety of functions they can perform [ 11. Second order gratings (SOGs) can be used to diffract a guided optical mode into a radiation mode. With the grating period identical to the wavelength in the waveguide, a counterpropagating mode is excited simultaneously and therefore the grating also provides optical feedback (resonant condition). With a slight detuning of the grating period, excitation of the reflected wave is suppressed and optical feedback is avoided (nonresonant condition). Horizontal cavity semiconductor lasers employing SOGs for surface normal emission are of great interest since they offer the prospect of beam control by varying the geometry of the grating. The surface emission efficiency (SEE) of symmetric SOGs is limited by the large fraction of the optical power that is radiated into the substrate [2]. Several methods to improve the SEE have been proposed and/or demonstrated, such as a multilayer reflector below the waveguide to redirect the substrate radiation [3] and various types of blazed gratings [2,4-61. Blazed SOGs can be made to radiate preferentially into air or substrate depending on the orientation of the grating with respect to the incident wave. Here we demonstrate, for the first time, blazing effects in grating coupled surface emitting (GSE) semiconductor lasers under both resonant and nonresonant conditions. The GSE lasers were fabricated from an InGaAdAlGaAs SQW-GRINSCH epitaxial
{"title":"Blazed Second Order Gratings In Grating Coupled Surface Emitters","authors":"A. Larsson, M. Hagberg, T. Kjellberg, N. Eriksson","doi":"10.1109/LEOSST.1994.700416","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700416","url":null,"abstract":"Surface gratings are useful components for integrated optic and optoelectronic circuits due to the large variety of functions they can perform [ 11. Second order gratings (SOGs) can be used to diffract a guided optical mode into a radiation mode. With the grating period identical to the wavelength in the waveguide, a counterpropagating mode is excited simultaneously and therefore the grating also provides optical feedback (resonant condition). With a slight detuning of the grating period, excitation of the reflected wave is suppressed and optical feedback is avoided (nonresonant condition). Horizontal cavity semiconductor lasers employing SOGs for surface normal emission are of great interest since they offer the prospect of beam control by varying the geometry of the grating. The surface emission efficiency (SEE) of symmetric SOGs is limited by the large fraction of the optical power that is radiated into the substrate [2]. Several methods to improve the SEE have been proposed and/or demonstrated, such as a multilayer reflector below the waveguide to redirect the substrate radiation [3] and various types of blazed gratings [2,4-61. Blazed SOGs can be made to radiate preferentially into air or substrate depending on the orientation of the grating with respect to the incident wave. Here we demonstrate, for the first time, blazing effects in grating coupled surface emitting (GSE) semiconductor lasers under both resonant and nonresonant conditions. The GSE lasers were fabricated from an InGaAdAlGaAs SQW-GRINSCH epitaxial","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115912319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700554
D. Bohling, G. T. Muhr, A. C. Jones, L. Smith
{"title":"Considerations For The Design, Production, And Application Of Metal-organic Precursors In Optoelectronic Material Growth","authors":"D. Bohling, G. T. Muhr, A. C. Jones, L. Smith","doi":"10.1109/LEOSST.1994.700554","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700554","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116926644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700552
M. MacDougal, Hanmin Zhao, K. Uppal, P. Dapkus, M. Ziari, W. Steier
Distributed Bragg reflectors (DBRs) are used in a wide variety of optoelectronic devices, including vertical cavity surface emitting lasers (VCSELs), resonant cavity detectors, and phototransistors. Because of the low refractive index ratio of 3.5/3.0 for typical materials, many pairs of the constituent materials must be grown to achieve a reflectivity of greater than 99%, and the band for which the reflectivity is greater than 90% is only around 100 nm. Furthermore, the spectral bandwidth and reflectivity are very sensitive to the thickness and thickness uniformity of the layers. For this reason, highly sophisticated growth control techniques must be employed to control the thickness. To relax this requirement as well as increase the spectral bandwidth , the use of two materials that have a much larger refractive difference must be used. In this report, we describe the fabrication of a wide bandwidth high reflectivity DBRs using the native oxide of AlAs as the low refractive index layer and GaAs as the high refractive index layer so that the refractive index ratio is increased from 1.2 in GaAs/AlAs to 2.3 in GaAs/AlAs oxide. The use of high index ratio mirrors in the GaAs material system has been shown previously[l,2], where the AlAs is etched away and replaced either with air or acrylic resin; however, this technique requires great care to keep the DBR from collapsing and needs supports on the side to hold up the GaAs layers. In contrast, our oxide/GaAs DBR structure is a robust, self-supporting structure An advantage of this structure due to the wide bandwidth is the insensitivity to the angle of incoming light. This wide bandwidth and low angular sensitivity benefit broadband devices such as light emitting diodes and solar cells by increasing light utilization. . The structure, shown in Figure 1, is grown by MOCVD, patterned with stripes, and etched to expose the AlAs layers for subsequent wet thermal oxidation[3]. The oxidation rate of AlAs is much faster than that of GaAs, which allows for the total consumption of AlAs while the GaAs is left unoxidized. The native oxide of AlAs is formed by flowing N2 bubbled through H20 at 90°C over the sample at 425°C. The sample is taken out when the AlAs is completely oxidized. The index of refraction of the oxide is approximately 1.55. The combination of the native oxide with GaAs, which has an index of refraction of 3.5 at 1 pm, creates a pair with a high refractive ratio of 2.26. The reflectivity spectrum of a 3 pair oxide/GaAs DBR is shown in Fig. 2. The absolute reflectivity is calibrated using Au as a reference. The peak reflectivity is 99.5f0.3%, and the bandwidth is 434 nm. By comparison, a structure with 16 pairs of AlAs/GaAs gives a reflectivity of 99.5% with a bandwidth of only 110 nm. The AlAs/GaAs structure is also 2 times thicker than the oxide/GaAs structure. We will present oxidation rates as well as dependence of oxide quality on growth conditions. Also, characterization of the structur
{"title":"Wide-bandwidth Distributed Bragg Reflector Using AlAs Oxide/GaAs Multilayers","authors":"M. MacDougal, Hanmin Zhao, K. Uppal, P. Dapkus, M. Ziari, W. Steier","doi":"10.1109/LEOSST.1994.700552","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700552","url":null,"abstract":"Distributed Bragg reflectors (DBRs) are used in a wide variety of optoelectronic devices, including vertical cavity surface emitting lasers (VCSELs), resonant cavity detectors, and phototransistors. Because of the low refractive index ratio of 3.5/3.0 for typical materials, many pairs of the constituent materials must be grown to achieve a reflectivity of greater than 99%, and the band for which the reflectivity is greater than 90% is only around 100 nm. Furthermore, the spectral bandwidth and reflectivity are very sensitive to the thickness and thickness uniformity of the layers. For this reason, highly sophisticated growth control techniques must be employed to control the thickness. To relax this requirement as well as increase the spectral bandwidth , the use of two materials that have a much larger refractive difference must be used. In this report, we describe the fabrication of a wide bandwidth high reflectivity DBRs using the native oxide of AlAs as the low refractive index layer and GaAs as the high refractive index layer so that the refractive index ratio is increased from 1.2 in GaAs/AlAs to 2.3 in GaAs/AlAs oxide. The use of high index ratio mirrors in the GaAs material system has been shown previously[l,2], where the AlAs is etched away and replaced either with air or acrylic resin; however, this technique requires great care to keep the DBR from collapsing and needs supports on the side to hold up the GaAs layers. In contrast, our oxide/GaAs DBR structure is a robust, self-supporting structure An advantage of this structure due to the wide bandwidth is the insensitivity to the angle of incoming light. This wide bandwidth and low angular sensitivity benefit broadband devices such as light emitting diodes and solar cells by increasing light utilization. . The structure, shown in Figure 1, is grown by MOCVD, patterned with stripes, and etched to expose the AlAs layers for subsequent wet thermal oxidation[3]. The oxidation rate of AlAs is much faster than that of GaAs, which allows for the total consumption of AlAs while the GaAs is left unoxidized. The native oxide of AlAs is formed by flowing N2 bubbled through H20 at 90°C over the sample at 425°C. The sample is taken out when the AlAs is completely oxidized. The index of refraction of the oxide is approximately 1.55. The combination of the native oxide with GaAs, which has an index of refraction of 3.5 at 1 pm, creates a pair with a high refractive ratio of 2.26. The reflectivity spectrum of a 3 pair oxide/GaAs DBR is shown in Fig. 2. The absolute reflectivity is calibrated using Au as a reference. The peak reflectivity is 99.5f0.3%, and the bandwidth is 434 nm. By comparison, a structure with 16 pairs of AlAs/GaAs gives a reflectivity of 99.5% with a bandwidth of only 110 nm. The AlAs/GaAs structure is also 2 times thicker than the oxide/GaAs structure. We will present oxidation rates as well as dependence of oxide quality on growth conditions. Also, characterization of the structur","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117070070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700543
H. Morkoç
The ever increasing need for higher density optical storage and full color display technologies is driving researchers to develop wide bandgap semiconductor emitter technologies which are active in the green, blue and ultraviolet wavelengths. This is due to the fact that the diffraction limited optical storage density increases quadratically as the probe laser wavelength is reduced. Wide bandgap emitters are also bringing semiconductor technology to full color displays.' For the first time, all three primary colors can be generated using semiconductor technology. Already InGaN/AlGaN DH LEDs, produced by Nichia Chemical Industries, Ltd., are capable of producing about 2 cd of luminosity at blue and blue-green wavelengths of the visible spectrum.
{"title":"III-V Nitrides For Optical Emitters","authors":"H. Morkoç","doi":"10.1109/LEOSST.1994.700543","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700543","url":null,"abstract":"The ever increasing need for higher density optical storage and full color display technologies is driving researchers to develop wide bandgap semiconductor emitter technologies which are active in the green, blue and ultraviolet wavelengths. This is due to the fact that the diffraction limited optical storage density increases quadratically as the probe laser wavelength is reduced. Wide bandgap emitters are also bringing semiconductor technology to full color displays.' For the first time, all three primary colors can be generated using semiconductor technology. Already InGaN/AlGaN DH LEDs, produced by Nichia Chemical Industries, Ltd., are capable of producing about 2 cd of luminosity at blue and blue-green wavelengths of the visible spectrum.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124945282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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