Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700450
L. Chirovsky, G. Livescu, G. Boyd, T. K. Woodward, R. A. Novotny, A. Lentine
{"title":"Optoelectronic Circuits And Smart Pixels Which Use Asynchronous Reset On Every Bit For Input Contentionless Switching (AROEBICS)","authors":"L. Chirovsky, G. Livescu, G. Boyd, T. K. Woodward, R. A. Novotny, A. Lentine","doi":"10.1109/LEOSST.1994.700450","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700450","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131750792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700540
A. Matsutani, F. Koyama, K. Iga
The dry etching is going to be used as an effective microfabrication technique to form micro-optical devices such as microcavity surface emitting (SE) lasers’, ” and etched facet lasers.’-’’ In these applications, the etched surfaces should be so smooth and vertical as to avoid light scattering and maintain high reflectivity, that is sensitive to the facet roughness.” Also, the smooth etched facet is needed to reduce the etching induced damage@ at sidewalls. Many authors have reported on InP reactive ion beam etching (RIBE) with Cl, electron cyclotron resonance (ECR) p la~ma.~ .~’ In these works, the etched bottom roughness reported is, for example, less than lOOnm at high ion extraction voltage of 1450V”. So far, the quality of the etched mirror reflectivity has been estimated mainly by scanning electron microscope (SEM) observation and by measuring the external differential quantum efficiency and the threshold of etched-facet semiconductor However, the quantitative evaluation of the sidewall roughness has never been reported. In this paper, we have measured the sidewall roughness using an electron probe surface roughness analyzer for the first time. The roughness of InP sidewalls etched by MBE is discussed under different etch conditions. In this experiment, we used a high-vacuum RJBE system with an electron cyclotron resonance (ECR)-type ion source. The etching gas is pure chlorine or chlorine including 33% argon. We measured the sidewall roughness using a field emission electron probe surface roughness analyzer. The roughness resolution of this system is about lnm. Since the roughness measurement by this system can be performed by a noncontact manner, the sample is not damaged by this measurement. The samples prepared here were (100) oriented InP substrates with an electron beam resist mask which was patterned by an electron beam lithography system to suppress mask edge fluctuations. In this experiment, the etching temperature was fixed to be 140°C. Figure 1 shows the 3-D plot of the sidewall roughness and the SEM image of the sample which was etched at an ion extraction voltage of 300V and a gas (Ar : Cl,= 1 : 2 ) pressure of 4.5 X 10-4Torr. The roughness of the etched sidewall is 2.5nm in center line average and lOnm in peak to peak roughness. Figure 2 summarizes the roughness measurement of the sidewall etched under various etching conditions. Fig. 2 (a) and (b) show the roughness of the sidewall and the bottom surface of the sample shown in Fig. 1, respectively. These results indicate that the sidewall and the surface of InP substrate etched by RIBE have almost equivalent roughness. In Fig. 2, it is realized that the minimum value of the average roughness of the etched sidewall is about lnm and the value of the peak to peak roughness is 5.8 nm at an ion extraction voltage of 4OOV and a gas pressure of 1.2 X 10-3Torr (h). This etched sidewall is as smooth as the cleaved facet of an InP substrate (i). It is found that the etched sidewall ro
干刻蚀是一种有效的微加工技术，可用于制备微腔面发射激光器、蚀刻面激光器等微光学器件。“在这些应用中，蚀刻表面应该是光滑和垂直的，以避免光散射并保持高反射率，这对表面粗糙度很敏感。”此外，需要光滑的蚀刻面来减少蚀刻引起的侧壁损伤。许多作者报道了用氯离子进行InP反应离子束刻蚀(RIBE)、电子回旋共振(ECR)刻蚀(la~ma)等。在这些工作中，例如，在1450V的高离子萃取电压下，蚀刻的底部粗糙度小于lOOnm。迄今为止，对蚀刻镜面反射率质量的评价主要是通过扫描电子显微镜(SEM)观察和测量蚀刻面半导体的外部微分量子效率和阈值，而对蚀刻面半导体的侧壁粗糙度的定量评价尚未见报道。本文首次使用电子探针表面粗糙度分析仪对侧壁粗糙度进行了测量。讨论了不同刻蚀条件下MBE刻蚀InP侧壁的粗糙度。在本实验中，我们使用高真空RJBE系统与电子回旋共振(ECR)型离子源。蚀刻气体为纯氯或含33%氩的氯。我们使用场发射电子探针表面粗糙度分析仪测量了侧壁粗糙度。该系统的粗糙度分辨率约为1nm。由于该系统的粗糙度测量可以通过非接触方式进行，因此该测量不会损坏样品。本文制备的样品是带有电子束抗蚀剂掩膜的(100)取向InP衬底，该掩膜通过电子束光刻系统进行图像化以抑制掩膜边缘波动。在本实验中，蚀刻温度固定为140℃。图1为离子萃取电压为300V，气体(Ar: Cl，= 1:2)压力为4.5 X 10-4Torr时蚀刻样品的侧壁粗糙度三维图和SEM图像。蚀刻侧壁的中心线平均粗糙度为2.5nm，峰间粗糙度为lOnm。图2总结了不同蚀刻条件下蚀刻侧壁的粗糙度测量。图2 (a)和(b)分别显示了图1所示样品的侧壁和底面粗糙度。结果表明，RIBE刻蚀的InP基材的侧壁和表面粗糙度基本相当。在图2中,它是意识到的最小值的平均粗糙度蚀刻侧壁是lnm和峰间粗糙度的值是5.8 nm的离子提取电压4 oov和气体压力为1.2 X 10-3Torr (h)。这个蚀刻侧壁一样光滑的裂解方面InP衬底(i)。发现蚀刻侧壁粗糙度是减少了较低的离子提取电压蚀刻在一个恒定的气压((c), (d)),以及在恒定的离子萃取电压((0，(g)， (h))下用较高的气体压力蚀刻。此外，随着蚀刻时间的减少，侧壁变得更光滑。为了获得光滑的InP蚀刻，我们应该尽可能地降低萃取电压和增加气体压力，同时保持各向异性的蚀刻轮廓。最小粗糙度远小于半导体激光的波长。如果可以减小刻蚀掩膜边缘的波动或波动，RIBE是一种有效的干刻蚀技术，用于制造微尺寸SE激光器和光电子器件。
{"title":"Measuremeni Of Sidewall Roughness Of InP Etched By RIBE","authors":"A. Matsutani, F. Koyama, K. Iga","doi":"10.1109/LEOSST.1994.700540","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700540","url":null,"abstract":"The dry etching is going to be used as an effective microfabrication technique to form micro-optical devices such as microcavity surface emitting (SE) lasers’, ” and etched facet lasers.’-’’ In these applications, the etched surfaces should be so smooth and vertical as to avoid light scattering and maintain high reflectivity, that is sensitive to the facet roughness.” Also, the smooth etched facet is needed to reduce the etching induced damage@ at sidewalls. Many authors have reported on InP reactive ion beam etching (RIBE) with Cl, electron cyclotron resonance (ECR) p la~ma.~ .~’ In these works, the etched bottom roughness reported is, for example, less than lOOnm at high ion extraction voltage of 1450V”. So far, the quality of the etched mirror reflectivity has been estimated mainly by scanning electron microscope (SEM) observation and by measuring the external differential quantum efficiency and the threshold of etched-facet semiconductor However, the quantitative evaluation of the sidewall roughness has never been reported. In this paper, we have measured the sidewall roughness using an electron probe surface roughness analyzer for the first time. The roughness of InP sidewalls etched by MBE is discussed under different etch conditions. In this experiment, we used a high-vacuum RJBE system with an electron cyclotron resonance (ECR)-type ion source. The etching gas is pure chlorine or chlorine including 33% argon. We measured the sidewall roughness using a field emission electron probe surface roughness analyzer. The roughness resolution of this system is about lnm. Since the roughness measurement by this system can be performed by a noncontact manner, the sample is not damaged by this measurement. The samples prepared here were (100) oriented InP substrates with an electron beam resist mask which was patterned by an electron beam lithography system to suppress mask edge fluctuations. In this experiment, the etching temperature was fixed to be 140°C. Figure 1 shows the 3-D plot of the sidewall roughness and the SEM image of the sample which was etched at an ion extraction voltage of 300V and a gas (Ar : Cl,= 1 : 2 ) pressure of 4.5 X 10-4Torr. The roughness of the etched sidewall is 2.5nm in center line average and lOnm in peak to peak roughness. Figure 2 summarizes the roughness measurement of the sidewall etched under various etching conditions. Fig. 2 (a) and (b) show the roughness of the sidewall and the bottom surface of the sample shown in Fig. 1, respectively. These results indicate that the sidewall and the surface of InP substrate etched by RIBE have almost equivalent roughness. In Fig. 2, it is realized that the minimum value of the average roughness of the etched sidewall is about lnm and the value of the peak to peak roughness is 5.8 nm at an ion extraction voltage of 4OOV and a gas pressure of 1.2 X 10-3Torr (h). This etched sidewall is as smooth as the cleaved facet of an InP substrate (i). It is found that the etched sidewall ro","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124955595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700429
C. Shih, J. Wang, W. Chang, D. Barlage, M. Feng
{"title":"Design And Fabrication Of Short Wavelength Four-channel MSM-MESFET Based OEIC Receivers","authors":"C. Shih, J. Wang, W. Chang, D. Barlage, M. Feng","doi":"10.1109/LEOSST.1994.700429","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700429","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131466671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700428
J.-H. Reemtoma, M. Grosakopl, F. Besca, D. Kaiser, F. Grotjahn, I. Gyúró, W. Kuebart
{"title":"10 Gb/s Manolithically Integrated Pin-MEMT Receiver OEIC: Realization And Comparison Of Different Circuit Concepts","authors":"J.-H. Reemtoma, M. Grosakopl, F. Besca, D. Kaiser, F. Grotjahn, I. Gyúró, W. Kuebart","doi":"10.1109/LEOSST.1994.700428","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700428","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114168781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700463
F. Tooley, S. Prince, M. Taghizadeh
Large arrays of smart pixels place demands on optical systems which are difficult to satisfy: low f-numbers are required since small (typically 10pm) detectors and transmitters are used to minimize capacitance and response time, large field of view is simultaneously necessary. One approach is to use microlens arrays. However, this necessitates the use of large chip areas. Hybrid lenses (figure 1) have been proposed for use with dilute arrays (low fill-factor) of smart pixels[l]. They combine the large field of view of slow, conventional lenses with the small spot size that can be achieved using fast microlenses. The pitch between the windows of the smart pixel (typically <100pm) is equal to the microlens pitch. An f75 lens was designed which images over a *So field angle and produces spots with 99% of the energy coupled into a 15pm spot. This spot is imaged by an afocal telescope composed of t73 and t7l microlens doublets. The first doublet collimates the light and the second, faster microlens doublet focuses the light into a small spot. The hybrid lens creates an array of small spots over a large field (7" diagonal). These hybrid lenses will be used to interconnect two S-SEED arrays. S-SEEDS comprise two 5pm windows which are separated by 20pm. Imaging two spots with each microlens requires that they be used off-axis. The use of an afocal telescope allows off-axis operation whereas the microlenses-only approach does not. The doublets work at infinite conjugates.
{"title":"Hybrid Lens Implemented Usine An afocal Microlens Telescope","authors":"F. Tooley, S. Prince, M. Taghizadeh","doi":"10.1109/LEOSST.1994.700463","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700463","url":null,"abstract":"Large arrays of smart pixels place demands on optical systems which are difficult to satisfy: low f-numbers are required since small (typically 10pm) detectors and transmitters are used to minimize capacitance and response time, large field of view is simultaneously necessary. One approach is to use microlens arrays. However, this necessitates the use of large chip areas. Hybrid lenses (figure 1) have been proposed for use with dilute arrays (low fill-factor) of smart pixels[l]. They combine the large field of view of slow, conventional lenses with the small spot size that can be achieved using fast microlenses. The pitch between the windows of the smart pixel (typically <100pm) is equal to the microlens pitch. An f75 lens was designed which images over a *So field angle and produces spots with 99% of the energy coupled into a 15pm spot. This spot is imaged by an afocal telescope composed of t73 and t7l microlens doublets. The first doublet collimates the light and the second, faster microlens doublet focuses the light into a small spot. The hybrid lens creates an array of small spots over a large field (7\" diagonal). These hybrid lenses will be used to interconnect two S-SEED arrays. S-SEEDS comprise two 5pm windows which are separated by 20pm. Imaging two spots with each microlens requires that they be used off-axis. The use of an afocal telescope allows off-axis operation whereas the microlenses-only approach does not. The doublets work at infinite conjugates.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123423426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700484
A. A. Saleh
{"title":"Transparent Optical Networks - The Promise And The Challenge","authors":"A. A. Saleh","doi":"10.1109/LEOSST.1994.700484","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700484","url":null,"abstract":"","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"168 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123562339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-07-06DOI: 10.1109/LEOSST.1994.700518
M. Marsan, A. Fumagalli, Emilio Leonardi, F. Neri
WDM technology and optical amplifiers have opened a new frontier for all-optical packet switched networks. However, several of the recently proposed WDM network architectures require as many wavelengths as the number of nodes attached to tlie network (see [a] for a survey). This resu1t.s in a dedicated wavelength channel for any node for either transmission or reception. These approaches might fall short when a relatively large number of nodes must be interconnected, due to c,urrently available optical technology, whic11 severely limits tlie maximum number of wavelengths in the system. We present a novel network architecture, named Daisy, that combines an N-frequency WDM approach with space diversity and time division access to interconnect up to N' nodes. 2 N fibers connect the nodes in a physical ring topology. Each node is assigned a dedicated logical cl~annel for reception operation. Daisy makes use of fast tunable transmitters and fixed receivers, and routes the light signals thoughout tlie network with passive optical components available today. Moreover, in Daisy routing is done so that a logical mesh configuration is realized over the ring physical topology. This configuration allows for a reduced maximum insertion loss encountered by packets, which in turns leads to a reduced amount of amplifier noise seen at the receiver.
{"title":"An All-optical Ring Network With Past Tunable Sources","authors":"M. Marsan, A. Fumagalli, Emilio Leonardi, F. Neri","doi":"10.1109/LEOSST.1994.700518","DOIUrl":"https://doi.org/10.1109/LEOSST.1994.700518","url":null,"abstract":"WDM technology and optical amplifiers have opened a new frontier for all-optical packet switched networks. However, several of the recently proposed WDM network architectures require as many wavelengths as the number of nodes attached to tlie network (see [a] for a survey). This resu1t.s in a dedicated wavelength channel for any node for either transmission or reception. These approaches might fall short when a relatively large number of nodes must be interconnected, due to c,urrently available optical technology, whic11 severely limits tlie maximum number of wavelengths in the system. We present a novel network architecture, named Daisy, that combines an N-frequency WDM approach with space diversity and time division access to interconnect up to N' nodes. 2 N fibers connect the nodes in a physical ring topology. Each node is assigned a dedicated logical cl~annel for reception operation. Daisy makes use of fast tunable transmitters and fixed receivers, and routes the light signals thoughout tlie network with passive optical components available today. Moreover, in Daisy routing is done so that a logical mesh configuration is realized over the ring physical topology. This configuration allows for a reduced maximum insertion loss encountered by packets, which in turns leads to a reduced amount of amplifier noise seen at the receiver.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125911285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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